JPS631699B2 - - Google Patents
Info
- Publication number
- JPS631699B2 JPS631699B2 JP55176626A JP17662680A JPS631699B2 JP S631699 B2 JPS631699 B2 JP S631699B2 JP 55176626 A JP55176626 A JP 55176626A JP 17662680 A JP17662680 A JP 17662680A JP S631699 B2 JPS631699 B2 JP S631699B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- cathode
- cavity
- axis
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000605 extraction Methods 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 12
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
本発明は、ガス放電装置、特に電子ビーム溶接
や製作片の処理に効果的に使用できる電子イオン
源に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas discharge apparatus, and in particular to an electron ion source that can be effectively used in electron beam welding and processing of fabricated pieces.
従来のガス放射イオン源としてペニングセルが
知られている。これは、環状陽極、該陽極の近く
に陽極の孔の対称軸方向に規定の磁界を作る装
置、互に電気的に結合し陽極の反対側に置かれる
二つの平らな陰極、この陰極の一つは放射チヤン
ネルを持つたエミツタ陰極である、から構成され
ている。引出し機構が放射チヤンネルの外方孔の
反対側に置かれている。第1の陰極の孔、陽極の
孔、放射チヤンネル及び引出し機構は全べて同軸
に配置されている。(例えば、M.D.Gabovitch
“Plasma Ion Sources.Physics and
Techniques;Moscow、“Atomizdat”,1972,
P.116)。 A Penning cell is known as a conventional gas radiation ion source. It consists of an annular anode, a device that creates a defined magnetic field near the anode in the direction of the symmetry axis of the hole in the anode, two flat cathodes that are electrically coupled to each other and placed on opposite sides of the anode, and one part of this cathode. One consists of an emitter cathode with a radiation channel. A withdrawal mechanism is located on the opposite side of the radial channel from the outer aperture. The first cathode hole, the anode hole, the radiation channel and the extraction mechanism are all arranged coaxially. (For example, M.D.Gabovitch
“Plasma Ion Sources.Physics and
Techniques; Moscow, “Atomizdat”, 1972,
P.116).
前述のイオン源では引出し機構で引き出される
電流の大きさは小さく、ペニングセル中に陰極点
を形成しない安定なグロー放電は単位当り低い荷
電粒子密度になる。 In the above-mentioned ion source, the magnitude of the current extracted by the extraction mechanism is small, and a stable glow discharge that does not form a cathode spot in the Penning cell results in a low density of charged particles per unit.
また、ペニングセルと異なる電子イオン源で
は、第1の陰極は陽極の孔の軸、エミツタ陰極の
放射チヤンネルの軸及び引出し機構の軸に沿つた
空洞の対称の軸を持つた中空円筒である(例え
ば、USSR Inventor′s Certificate No.456322;
cl.H 01J3/02,1973)。 Also, in electron ion sources different from Penning cells, the first cathode is a hollow cylinder with an axis of symmetry of the cavity along the axis of the hole in the anode, the axis of the emission channel of the emitter cathode, and the axis of the extraction mechanism (e.g. , USSR Inventor′s Certificate No.456322;
cl.H 01J3/02, 1973).
上述のイオン源と同様にこのイオン源は反射放
電中空陰極から粒子を縦方向に抜取つている。こ
のことは、放射チヤンネルの軸方向により容易に
放電を行わす空洞を持つた中空陰極を使用してい
るので、電子の抜取りを比較的高率にしている。 Like the ion source described above, this ion source extracts particles longitudinally from a reflective discharge hollow cathode. This results in a relatively high rate of electron extraction due to the use of a hollow cathode with a cavity that facilitates discharge in the axial direction of the radiation channel.
しかしながら、前述のイオン源は引出し電流の
深い変調を行つている(約80〜100%)。前述の環
状陽極と陰極を備えた放電室中に、放電の中に回
転方位不均一性を生じ易くする条件が存在する。
そして引出し機構による引出し電圧が一定だとし
ても、引出し電流は反復周波数100〜200KHz(パ
ルス電流)で変調される。公知のイオン源の使用
は間違いなく一般的に実施困難である。 However, the aforementioned ion sources have deep modulation of the extraction current (approximately 80-100%). In a discharge chamber equipped with the annular anode and cathode described above, conditions exist that tend to produce rotational azimuth non-uniformity in the discharge.
Even if the extraction voltage by the extraction mechanism is constant, the extraction current is modulated at a repetition frequency of 100 to 200 KHz (pulse current). The use of known ion sources is undoubtedly generally difficult to implement.
本発明は、放電室が充分に高い抜取り効果を伴
ない充電粒子束の変調を防止するような電子イオ
ン源の提供にある。 The invention consists in providing an electron ion source in which the discharge chamber has a sufficiently high sampling effect and prevents modulation of the charged particle flux.
上記の目的は、以下の構成からなる電子イオン
源によつて達成される。 The above object is achieved by an electron ion source having the following configuration.
環状陽極、該陽極の近くに陽極の孔の対称軸方
向に規定の磁界を作る装置、前記磁界のベクトル
方向に並行に空洞の軸を持つた中空円筒陰極、空
円筒陰極の空洞と同軸に配置され放射チヤンネル
を有る陰極、前記中空円筒陰極及び放射チヤンネ
ルを有する陰極は互に電気的に結合して互に陽極
の反対側に置かれ、放射チヤンネルの出口孔の向
い側に引出し機構を配して成り、陽極の孔の対称
軸が円筒陰極の空洞の軸に対して、陽極の孔の半
径と円筒陰極の空洞の半径の合計を越えない距離
だけ偏つていて、回転方位プラズマ不均一性の発
生を阻害し、出力電流の変調を妨げる電子イオン
源。 an annular anode, a device for creating a prescribed magnetic field near the anode in the direction of the symmetry axis of the hole in the anode, a hollow cylindrical cathode with the axis of the cavity parallel to the vector direction of the magnetic field, arranged coaxially with the cavity of the hollow cylindrical cathode. The hollow cylindrical cathode and the cathode with a radiation channel are electrically coupled to each other and placed on opposite sides of the anode, and an extraction mechanism is disposed on the opposite side of the exit hole of the radiation channel. The axis of symmetry of the anode hole is offset from the axis of the cylindrical cathode cavity by a distance not exceeding the sum of the radius of the anode hole and the radius of the cylindrical cathode cavity, resulting in rotational azimuthal plasma inhomogeneity. electron ion source that inhibits the generation of ion and modulates the output current.
本発明による電子イオン源は引出し電流の変調
を防止し高い抜取り効果を確立する。さらに、構
造が簡単で運転に信頼を持つことができる。 The electron ion source according to the invention prevents modulation of the extraction current and establishes a high extraction efficiency. Furthermore, the structure is simple and operation is reliable.
本発明の実施例を図面について説明する。 Embodiments of the present invention will be described with reference to the drawings.
本発明による電子イオン源は環状陽極1(第
1,2図)と該陽極1の孔の対称軸3の方向に規
定の磁界B(点線で示す)を陽極1の近くに作る
装置として働く陽極1と同軸の永久磁石2を備え
ている。中空円筒陰極4とエミツタ陰極5は互に
電気的に結合し陽極1の反対側に置かれる。陰極
4の空洞6と陰極5の放射チヤネル7は、磁界B
のベクトル方向に並行な縦軸に同軸に配置され
る。これと同軸に放射チヤネル7の出口孔の向い
側に置かれているのは引出し機構(本発明の実施
例では引出し電極8)である。環状陽極1の孔
は、孔における対称軸3が陰極4の空洞6の対称
軸との関係で、陽極1の孔と陰極4の空洞6との
合計半径を越えない隔り“a”で置かれる。この
隔り“a”は空洞6の半径に等しいことが有利で
ある。陽極1、磁石2、陰極4,5及び引出し電
極8は絶縁材料と導電材料から作つたフランジ1
0,11を備えるシールで造られる囲い9の中に
入れられる。陽極1、中空円筒陰極4及びエミツ
タ陰極5で限定される空間は放電室12を形成す
る。囲い9の外側に配置される電流源13は放電
室12の電極(陽極1と陰極5)に電圧を与え
る。また囲い9の外側に配置される電力源14は
陰極5と引出し電極8との間に引出し電圧を作
る。電源13,14の出力端子は絶縁囲い9の壁
に在る密封された入力端子15を通じて電子イオ
ン源の電極にそれぞれ接続されている。 The electron ion source according to the invention consists of an annular anode 1 (FIGS. 1 and 2) and an anode which serves as a device for creating a defined magnetic field B (shown in dotted lines) in the vicinity of the anode 1 in the direction of the axis of symmetry 3 of the bore of said anode 1. 1 and a coaxial permanent magnet 2. A hollow cylindrical cathode 4 and an emitter cathode 5 are electrically coupled to each other and placed on opposite sides of the anode 1. The cavity 6 of the cathode 4 and the radiation channel 7 of the cathode 5 are exposed to the magnetic field B
is placed coaxially with the vertical axis parallel to the vector direction. Coaxially located opposite the exit hole of the radiation channel 7 is an extraction mechanism (extraction electrode 8 in the embodiment of the invention). The holes in the annular anode 1 are placed at a distance "a" in which the axis of symmetry 3 in the holes does not exceed the sum of the radii of the holes 6 in the cathode 4 with respect to the axis of symmetry of the cavity 6 in the cathode 4. It will be destroyed. Advantageously, this distance "a" is equal to the radius of the cavity 6. The anode 1, the magnet 2, the cathodes 4 and 5, and the extraction electrode 8 are made of a flange 1 made of an insulating material and a conductive material.
It is placed in an enclosure 9 made of seals with 0,11. A space defined by the anode 1 , the hollow cylindrical cathode 4 and the emitter cathode 5 forms a discharge chamber 12 . A current source 13 located outside the enclosure 9 applies a voltage to the electrodes (anode 1 and cathode 5) of the discharge chamber 12. Also, a power source 14 located outside the enclosure 9 creates an extraction voltage between the cathode 5 and the extraction electrode 8. The output terminals of the power supplies 13, 14 are respectively connected to the electrodes of the electron ion source through sealed input terminals 15 in the wall of the insulating enclosure 9.
第1図において、電源14の接続極性は放電か
らの電子の抜き取りになつている。イオンビーム
を得るためには、電力源14の接続極性を変換す
ることが必要である。 In FIG. 1, the connection polarity of the power source 14 is such that electrons are extracted from the discharge. In order to obtain an ion beam, it is necessary to convert the connection polarity of the power source 14.
次に動作について説明する。 Next, the operation will be explained.
作動ガスが陰極空洞6を通じて放電室12に1
×10-2torrの圧力になるまで供給される。 A working gas is introduced into the discharge chamber 12 through the cathode cavity 6.
It is supplied until the pressure reaches ×10 -2 torr.
ペニング放電は、陰極4,5と陽極1との間の
印加電圧と指定の圧力において放電室12に生じ
る。放電々流が増し、陰極電圧降下域が陰極4の
空洞6の開がりより小さくなると、ペニング放電
プラズマが空洞6の中に貫通し、中空陰極効果を
生ずる。ペニング放電は空洞軸に沿つて集中され
る高プラズマによつて特徴づけられる中空陰極反
射放電に変る。陰極4の空洞6の軸は陽極1の軸
に対して偏つているので、最も放電プラズマが集
中しかつ空洞の開がりに対して常に偏つている範
囲も又、陽極1の軸に対して隔つている。このよ
うな状態で回転方位不均一性の形成が妨げられ、
これはイオン源の出力電流の変調を妨げる要素に
なる。これは放電室12の中での電界の不一様性
として説明される。 A Penning discharge occurs in the discharge chamber 12 at an applied voltage between the cathodes 4, 5 and the anode 1 and at a specified pressure. When the discharge current increases and the cathode voltage drop region becomes smaller than the opening of the cavity 6 of the cathode 4, the Penning discharge plasma penetrates into the cavity 6, creating a hollow cathode effect. The Penning discharge transforms into a hollow cathode reflection discharge characterized by a high plasma concentration along the cavity axis. Since the axis of the cavity 6 of the cathode 4 is offset with respect to the axis of the anode 1, the area where the discharge plasma is most concentrated and always offset with respect to the opening of the cavity is also spaced apart with respect to the axis of the anode 1. It's on. In such a state, the formation of rotational azimuth nonuniformity is prevented,
This becomes a factor that hinders modulation of the output current of the ion source. This can be explained as a non-uniformity of the electric field within the discharge chamber 12.
最適の状態は、軸の配置が空洞6の開がり半径
に等しい時に生ずる。イオン源の出力電流の変調
が妨げられることに加えて、香い電子抜取り効果
が本質的に保たれる。 The optimum situation occurs when the arrangement of the shafts is equal to the opening radius of the cavity 6. In addition to preventing modulation of the ion source output current, the scent electron extraction effect is essentially preserved.
以上のように、軸方向に隔つた孔を持つ陽極1
の使用は引抜き電流の変調を防止し、本発明によ
るイオン源の使用範囲を有効に広げている。 As described above, the anode 1 with holes spaced apart in the axial direction
The use of 20.degree. C. prevents modulation of the extraction current and effectively extends the range of use of the ion source according to the present invention.
第1図は、本発明による電子イオン源の簡略断
面図であり、第2図は本発明による環状陽極の平
面図である。
図において、1…陽極、3…陽極の孔の軸、4
…中空円筒陰極、5…エミツタ陰極、6…陰極空
洞、7…放射チヤンネル、8…引出し電極。
FIG. 1 is a simplified cross-sectional view of an electron ion source according to the invention, and FIG. 2 is a plan view of an annular anode according to the invention. In the figure, 1...anode, 3...axis of hole in anode, 4
... hollow cylindrical cathode, 5 ... emitter cathode, 6 ... cathode cavity, 7 ... radiation channel, 8 ... extraction electrode.
Claims (1)
軸3の方向に規定の磁界Bを作る装置、前記磁界
Bのベクトル方向に並行に空洞6の軸を持つた中
空円筒陰極4、該円筒陰極4の空洞6と同軸に配
置され放射チヤンネル7を有する陰極5、前記中
空円筒陰極4及び放射チヤンネル7を有する陰極
5は互に電気的に結合して互に陽極1の反対側に
置かれ、放射チヤンネル7の出口孔の向い側に引
出し機構8を配して成り、陽極1の孔の対称軸3
が円筒陰極4の空洞6の軸に対して、陽極1の孔
の半径と円筒陰極4の空洞6の半径の合計を越え
ない距離“a”だけ偏つていて、回転方位プラズ
マ不均一性の発生を阻害し、出力電流の変調を妨
げることを特徴とする電子イオン源。 2 偏り距離の値“a”が円筒陰極4の空洞6の
半径に等しいことを特徴とする特許請求の範囲第
1項に記載の電子イオン源。[Claims] 1. An annular anode 1, a device for creating a prescribed magnetic field B near the anode in the direction of the symmetry axis 3 of the hole in the anode, and a cavity 6 having an axis parallel to the vector direction of the magnetic field B. A hollow cylindrical cathode 4, a cathode 5 disposed coaxially with the cavity 6 of the cylindrical cathode 4 and having a radiation channel 7, the hollow cylindrical cathode 4 and the cathode 5 having the radiation channel 7 are electrically coupled to each other and serve as an anode to each other. 1 and comprises an extraction mechanism 8 on the side opposite the exit hole of the radiation channel 7, which aligns with the axis of symmetry 3 of the hole of the anode 1.
is offset from the axis of the cavity 6 of the cylindrical cathode 4 by a distance "a" which does not exceed the sum of the radius of the hole in the anode 1 and the radius of the cavity 6 in the cylindrical cathode 4, and An electronic ion source characterized by inhibiting generation and modulation of output current. 2. Electron ion source according to claim 1, characterized in that the value "a" of the deflection distance is equal to the radius of the cavity 6 of the cylindrical cathode 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176626A JPS57113547A (en) | 1980-12-16 | 1980-12-16 | Electron ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55176626A JPS57113547A (en) | 1980-12-16 | 1980-12-16 | Electron ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57113547A JPS57113547A (en) | 1982-07-15 |
| JPS631699B2 true JPS631699B2 (en) | 1988-01-13 |
Family
ID=16016862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55176626A Granted JPS57113547A (en) | 1980-12-16 | 1980-12-16 | Electron ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57113547A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182640A (en) * | 1984-02-29 | 1985-09-18 | Toshiba Corp | Ion source device |
| JP7778615B2 (en) * | 2022-03-18 | 2025-12-02 | 住友重機械工業株式会社 | Ion source and accelerator |
-
1980
- 1980-12-16 JP JP55176626A patent/JPS57113547A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57113547A (en) | 1982-07-15 |
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