JPS6317052B2 - - Google Patents
Info
- Publication number
- JPS6317052B2 JPS6317052B2 JP367080A JP367080A JPS6317052B2 JP S6317052 B2 JPS6317052 B2 JP S6317052B2 JP 367080 A JP367080 A JP 367080A JP 367080 A JP367080 A JP 367080A JP S6317052 B2 JPS6317052 B2 JP S6317052B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- isocyanate
- catalyst
- diformamide
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003054 catalyst Substances 0.000 claims description 34
- -1 N-monosubstituted formamide Chemical class 0.000 claims description 27
- 239000012948 isocyanate Substances 0.000 claims description 22
- 150000002513 isocyanates Chemical class 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 32
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 238000000034 method Methods 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000002994 raw material Substances 0.000 description 9
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 8
- AIDQCFHFXWPAFG-UHFFFAOYSA-N n-formylformamide Chemical compound O=CNC=O AIDQCFHFXWPAFG-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 6
- QQGNLKJAIVSNCO-UHFFFAOYSA-N N-butylformamide Chemical compound CCCCNC=O QQGNLKJAIVSNCO-UHFFFAOYSA-N 0.000 description 5
- HNHVTXYLRVGMHD-UHFFFAOYSA-N n-butyl isocyanate Chemical compound CCCCN=C=O HNHVTXYLRVGMHD-UHFFFAOYSA-N 0.000 description 5
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 150000003948 formamides Chemical class 0.000 description 4
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PFBAGGWJGZAGCG-UHFFFAOYSA-N n,n-diformylformamide Chemical compound O=CN(C=O)C=O PFBAGGWJGZAGCG-UHFFFAOYSA-N 0.000 description 4
- YLYBTZIQSIBWLI-UHFFFAOYSA-N octyl acetate Chemical compound CCCCCCCCOC(C)=O YLYBTZIQSIBWLI-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- BTGRAWJCKBQKAO-UHFFFAOYSA-N adiponitrile Chemical compound N#CCCCCC#N BTGRAWJCKBQKAO-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- DYDNPESBYVVLBO-UHFFFAOYSA-N formanilide Chemical compound O=CNC1=CC=CC=C1 DYDNPESBYVVLBO-UHFFFAOYSA-N 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007086 side reaction Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 2
- DLKQHBOKULLWDQ-UHFFFAOYSA-N 1-bromonaphthalene Chemical compound C1=CC=C2C(Br)=CC=CC2=C1 DLKQHBOKULLWDQ-UHFFFAOYSA-N 0.000 description 2
- HMJBXEZHJUYJQY-UHFFFAOYSA-N 4-(aminomethyl)octane-1,8-diamine Chemical compound NCCCCC(CN)CCCN HMJBXEZHJUYJQY-UHFFFAOYSA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 2
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 2
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 2
- 239000004472 Lysine Substances 0.000 description 2
- SWGXDLRCJNEEGZ-UHFFFAOYSA-N N-cyclohexylformamide Chemical compound O=CNC1CCCCC1 SWGXDLRCJNEEGZ-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 235000003704 aspartic acid Nutrition 0.000 description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 125000004494 ethyl ester group Chemical group 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 235000013922 glutamic acid Nutrition 0.000 description 2
- 239000004220 glutamic acid Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- LVDFMQLCDCNNKK-UHFFFAOYSA-N n-(6-formamidohexyl)formamide Chemical compound O=CNCCCCCCNC=O LVDFMQLCDCNNKK-UHFFFAOYSA-N 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- DGTNSSLYPYDJGL-UHFFFAOYSA-N phenyl isocyanate Chemical compound O=C=NC1=CC=CC=C1 DGTNSSLYPYDJGL-UHFFFAOYSA-N 0.000 description 2
- 238000011002 quantification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000004474 valine Substances 0.000 description 2
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- RHNNQENFSNOGAM-UHFFFAOYSA-N 1,8-diisocyanato-4-(isocyanatomethyl)octane Chemical compound O=C=NCCCCC(CN=C=O)CCCN=C=O RHNNQENFSNOGAM-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- IIBOGKHTXBPGEI-UHFFFAOYSA-N N-benzylformamide Chemical compound O=CNCC1=CC=CC=C1 IIBOGKHTXBPGEI-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- CEQGYPPMTKWBIU-UHFFFAOYSA-N Octyl propanoate Chemical compound CCCCCCCCOC(=O)CC CEQGYPPMTKWBIU-UHFFFAOYSA-N 0.000 description 1
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- 239000006004 Quartz sand Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
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- 239000006227 byproduct Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
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- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 1
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
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- 125000004185 ester group Chemical group 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
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- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- SJOGFIHPHWLDSP-UHFFFAOYSA-N n-(1h-inden-1-yl)formamide Chemical compound C1=CC=C2C(NC=O)C=CC2=C1 SJOGFIHPHWLDSP-UHFFFAOYSA-N 0.000 description 1
- YCRJHNKOUDYKMZ-UHFFFAOYSA-N n-(2,2-dimethylpropyl)formamide Chemical compound CC(C)(C)CNC=O YCRJHNKOUDYKMZ-UHFFFAOYSA-N 0.000 description 1
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- YRNQKAIOPGZNHZ-UHFFFAOYSA-N n-(3-formamido-4-methylphenyl)formamide Chemical compound CC1=CC=C(NC=O)C=C1NC=O YRNQKAIOPGZNHZ-UHFFFAOYSA-N 0.000 description 1
- KDLCQMBNDVZRKM-UHFFFAOYSA-N n-(4-formamidophenyl)formamide Chemical compound O=CNC1=CC=C(NC=O)C=C1 KDLCQMBNDVZRKM-UHFFFAOYSA-N 0.000 description 1
- AWIIFLDEDWAYGJ-UHFFFAOYSA-N n-cyclohexyl-n-methylformamide Chemical compound O=CN(C)C1CCCCC1 AWIIFLDEDWAYGJ-UHFFFAOYSA-N 0.000 description 1
- WYLHQTSQMKMTGM-UHFFFAOYSA-N n-cyclopentylformamide Chemical compound O=CNC1CCCC1 WYLHQTSQMKMTGM-UHFFFAOYSA-N 0.000 description 1
- ZNCRMMYZWDNTCE-UHFFFAOYSA-N n-decylformamide Chemical compound CCCCCCCCCCNC=O ZNCRMMYZWDNTCE-UHFFFAOYSA-N 0.000 description 1
- TYCXRAVZVQSHSC-UHFFFAOYSA-N n-dodecylformamide Chemical compound CCCCCCCCCCCCNC=O TYCXRAVZVQSHSC-UHFFFAOYSA-N 0.000 description 1
- KERBAAIBDHEFDD-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O KERBAAIBDHEFDD-UHFFFAOYSA-N 0.000 description 1
- YAUHDTOEJHVKJO-UHFFFAOYSA-N n-heptylformamide Chemical compound CCCCCCCNC=O YAUHDTOEJHVKJO-UHFFFAOYSA-N 0.000 description 1
- NHTXRWUMLXSOGJ-UHFFFAOYSA-N n-hexylformamide Chemical compound CCCCCCNC=O NHTXRWUMLXSOGJ-UHFFFAOYSA-N 0.000 description 1
- CGRYTQQVSFZYCI-UHFFFAOYSA-N n-naphthalen-1-ylformamide Chemical compound C1=CC=C2C(NC=O)=CC=CC2=C1 CGRYTQQVSFZYCI-UHFFFAOYSA-N 0.000 description 1
- HEIIJVVALRPNFV-UHFFFAOYSA-N n-nonylformamide Chemical compound CCCCCCCCCNC=O HEIIJVVALRPNFV-UHFFFAOYSA-N 0.000 description 1
- JFBFCFNJBMLUHN-UHFFFAOYSA-N n-octadecylformamide Chemical compound CCCCCCCCCCCCCCCCCCNC=O JFBFCFNJBMLUHN-UHFFFAOYSA-N 0.000 description 1
- ZBWPKQRQZDZVSF-UHFFFAOYSA-N n-octylformamide Chemical compound CCCCCCCCNC=O ZBWPKQRQZDZVSF-UHFFFAOYSA-N 0.000 description 1
- UBKOTQBYKQFINX-UHFFFAOYSA-N n-pentylformamide Chemical compound CCCCCNC=O UBKOTQBYKQFINX-UHFFFAOYSA-N 0.000 description 1
- KVTGAKFJRLBHLU-UHFFFAOYSA-N n-propan-2-ylformamide Chemical compound CC(C)NC=O KVTGAKFJRLBHLU-UHFFFAOYSA-N 0.000 description 1
- SUUDTPGCUKBECW-UHFFFAOYSA-N n-propylformamide Chemical compound CCCNC=O SUUDTPGCUKBECW-UHFFFAOYSA-N 0.000 description 1
- NOCSAAHHSOQRCI-UHFFFAOYSA-N n-pyridin-2-ylformamide Chemical compound O=CNC1=CC=CC=N1 NOCSAAHHSOQRCI-UHFFFAOYSA-N 0.000 description 1
- SDLAKRCBYGZJRW-UHFFFAOYSA-N n-tert-butylformamide Chemical compound CC(C)(C)NC=O SDLAKRCBYGZJRW-UHFFFAOYSA-N 0.000 description 1
- SIMTXFOEYKYLRD-UHFFFAOYSA-N n-undecylformamide Chemical compound CCCCCCCCCCCNC=O SIMTXFOEYKYLRD-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- PZZICILSCNDOKK-UHFFFAOYSA-N propane-1,2,3-triamine Chemical compound NCC(N)CN PZZICILSCNDOKK-UHFFFAOYSA-N 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
本発明は、N―モノ置換ホルムアミドからイソ
シアナートを製造する方法に関する。
イソシアナートを製造する方法は種々提案され
ているが、工業的に実施されているのはアミンま
たはその塩とホスゲンとの反応によるものが殆ん
どである。しかしながら、ホスゲンは猛毒であ
り、また微量の水分によつても加水分解され腐食
性となることから、他の方法によるイソシアナー
ト類の製造法の開発が望まれている。
このような方法の一つとして最近、ホルムアミ
ドからイソシアナートを製造する方法が特開昭54
―39018号によつて開示された。これによれば、
N―モノ置換ホルムアミドを気相中で、約300〜
約600℃の温度で、銅および/または元素の周期
律表の第5および第6周期の第B族および第
族の1種またはそれ以上の金属の触媒の存在下に
酸化することによつてイソシアナートが製造され
ることが記載されているが、この方法は第族の
白金族金属を触媒として用いた時には、イソシア
ナートの収率および選択性が悪く、銀を用いた時
のみ満足できる結果が得られているに過ぎないこ
とは明らかである。いずれにしても、この方法は
高価な銀や白金族金属を触媒としている。
そこで、本発明者らは、このような高価な触媒
を用いずに、N―モノ置換ホルムアミド類から比
較的高収率で、また高選択性でイソシアナート類
を製造する方法について鋭意研究を重ねた結果、
本発明に到達した。
すなわち本発明は、N―モノ置換ホルムアミド
を300〜600℃の範囲の温度で酸素含有ガスを用い
て酸化することによりイソシアナートを製造する
方法において、鉄、コバルト、ニツケルから選ば
れた1種またはそれ以上の金属または/および金
属の酸化物から成る触媒を用いることを特徴とす
るN―モノ置換ホルムアミドからイソシアナート
の製造方法にある。
本発明で用いられる鉄、コバルト、ニツケル
は、それぞれ金属状態のものと酸化物である。酸
化物としては、Fe2O3,Fe3O4,Co2O3,CoO,
NiOがあげられるが、もちろん他の酸化状態の酸
化物が含まれていてもよい。これらの金属および
金属酸化物は単独で用いることもできるし、2種
以上用いることもできる。また、これらの金属お
よび金属酸化物に、必要に応じて、触媒として活
性でも活性でなくてもよい他の金属または金属酸
化物を加えたものを触媒として使用することもで
きる。
これらの触媒は、担体なしで用いることもでき
るし、担体に担持させたものであつてもよい。担
体としては、反応条件下で原料および生成物の分
解や副反応を起す活性のないもの、あるいは活性
の低いものから選ばれるべきで、このような担体
としては、炭化ケイ素、二酸化チタン、窒化ケイ
素、炭化ホウ素、酸化ジルコニウム、焼成シリカ
ゲル、炭化チタン、およびこれらの混合物等を主
成分とするものが好ましい。特に好ましいのは炭
化ケイ素を主成分とする担体である。
これらの担体に触媒成分を担持させる一般的な
方法としては、これらの金属の塩類の溶液に担体
を浸漬させ、乾燥後、空気または酸素気流中で高
温熱処理を行なつて酸化物とする方法と、熱処理
後、さらに水素、一酸化炭素などの還元性雰囲気
中で熱処理することによつて金属状態にする方法
があるが、もちろん他のいかなる方法によつて担
持させてもよい。そして、これらの担体上におい
て、触媒成分は金属状態と種々の酸化状態との混
合物であつても何らさしつかえない。これらの触
媒成分は、担体に対して0.1重量%以上担持され
たものが好ましい。
本発明で出発物質として用いられるN―モノ置
換ホルムアミドとは、一般式
で示されるものであつて、式中、nは1〜3の整
数を表わす。またRはn価の有機残基を意味し、
置換または未置換の脂肪族基、脂環族基、芳香族
基およびアラルキル基を表わす。置換基として
は、反応条件下で分解したり、副反応を起したり
するもの以外であれば、どんなものであつてもよ
い。たとえば、塩素、フツ素、ニトリル基、アル
キル基、アルコキシ基、アシル基、エステル基な
どの置換基を有するN―モノ置換ホルムアミド類
は、本発明で使用することができる。
未置換のN―モノ置換ホルムアミドとしては、
たとえば、N―メチルホルムアミド、N―エチル
ホルムアミド、N―プロピルホルムアミド、N―
ブチルホルムアミド、N―ペンチルホルムアミ
ド、N―ヘキシルホルムアミド、N―ヘプチルホ
ルムアミド、N―オクチルホルムアミド、N―ノ
ニルホルムアミド、N―デシルホルムアミド、N
―ウンデシルホルムアミド、N―ドデシルホルム
アミド、N―オクタデシルホルムアミド、N―イ
ソプロピルホルムアミド、N―イソブチルホルム
アミド、N―t―ブチルホルムアミド、N―ネオ
ペンチルホルムアミド等のN―アルキルモノホル
ムアミド類;N―シクロペンチルホルムアミド、
N―シクロヘキシルホルムアミド、N―メチルシ
クロヘキシルホルムアミド等のN―脂環式モノホ
ルムアミド類;N―フエニルホルムアミド、N―
ナフチルホルムアミド、N―ピリジルホルムアミ
ド、N―インデニルホルムアミド、N―トリアジ
ニルホルムアミド、N―トリルホルムアミド、N
―キノリルホルムアミド、N―オキサゾリルホル
ムアミド等のN―アリールモノホルムアミド類;
N―ベンジルホルムアミド、N―フエネチルホル
ムアミド等のN―アラルキルモノホルムアミド
類;N,N′―テトラメチレンジホルムアミド、
N,N′―ヘキサメチレンジホルムアミド、N,
N′―オクタメチレンジホルムアミド、N,N′―
ウンデカメチレンジホルムアミド、N,N′―ド
デカメチレンジホルムアミド等のN,N′―アル
キレンシホルムアミド類;N,N′―1,4―シ
クロヘキシルジホルムアミド、N,N′―1,4
―ジメチルシクロヘキシルホルムアミド、N,
N′―イソホロンジホルムアミド、N,N′―シク
ロヘキシルメチレンジホルムアミド、N,N′―
4,4′―ジシクロヘキシルメタンジホルムアミド
等のN,N′―脂環式ジホルムアミド類;N,
N′―1,4―フエニレンジホルムアミド、N,
N′―2,4―トリレンジホルムアミド、N,
N′―2,6―トリレンジホルムアミド、N,
N′―4,4′―ジフエニルメタンジホルムアミド、
N,N′―4,4′―ジフエニルエーテルジホルムア
ミド、N,N′―1,4―ナフチレンジホルムア
ミド、N,N′―1,5―ナフチレンジホルムア
ミド、N,N′―2,6―ナフチレンジホルムア
ミド等のN,N′―アリールジホルムアミド類;
N,N′―キシリレンジホルムアミド等のN,
N′―アラルキレンジホルムアミド類などのモノ
ホルムアミドおよびジホルムアミドがあげられ
る。この他にトリアミン、たとえば、1,8―ジ
アミノ―4―アミノメチルオクタン、1,2,3
―トリアミノプロパン、メラミン、トリス(2―
アミノエチル)アミンなどのトリホルムアミドも
本発明で用いることができ、相当するトリイソシ
アナートへ変換することができる。
これらの未置換のホルムアミドを前記の置換基
で置換したホルムアミド類も、もちろん使用でき
る。たとえばアミノ酸のエステル誘導体のホルム
アミドなども使用できる。このようなものとして
は、アラニン、バリン、ロイシンのメチルエステ
ル、エチルエステルなどのホルムアミド;アスパ
ラギン酸、グルタミン酸のジメチルエステル、ジ
エチルエステルなどのホルムアミド;リジンのメ
チルエステル、エチルエステルなどのジホルムア
ミド;アラニン、バリン、ロイシンの2―アミノ
エチルエステルなどのジホルムアミド;アスパラ
ギン酸、グルタミン酸のジ(2―アミノエチル)
エステルなどのトリホルムアミド;リジンの2―
アミノエチルエステルなどのトリホルムアミドな
どがある。
これらのN―モノ置換ホルムアミド類は、相当
する一級アミンとギ酸誘導体、たとえばギ酸メチ
ル、ギ酸エチルなどのギ酸エステルとの反応、ま
たは一酸化炭素との反応などによつて容易に得ら
れるが、もちろん他の方法によつて製造されたも
のであつてもよい。
本発明で用いられる酸素含有ガスとは、酸素を
所定量含むものであつて、空気でもよいし、空気
または純酸素を反応を阻害しない他のガス、たと
えば、窒素、アルゴン、ヘリウム、炭酸ガスなど
の不活性ガスで希釈したものであつてもよい。ま
た場合によつては、水素、一酸化炭素、炭化水
素、ハロゲン化炭化水素などのガスを含んでいて
もよい。
触媒上に供給されるN―モノ置換ホルムアミド
と酸素との割合は、ホルムアミド基1個当り、酸
素が0.5〜50当量、好ましくは1〜20当量である。
酸素量が少なすぎるとイソシアナートの収率が低
くなり、また多すぎると酸化分解、燃焼などが起
つてイソシアナートの収率が低下する。
反応系を窒素、アルゴン、ヘリウム、炭酸ガス
などの不活性ガスで希釈することも好ましい方法
で、この場合、これらの不活性ガスは原料のキヤ
リアーとしても用いられる。
反応系に供給されるN―モノ置換ホルムアミド
はそのままでもよいし、不活性溶媒で希釈された
ものであつてもよい。このような溶媒の例として
は、ベンゼン、トルエン、キシレン、ビフエニ
ル、ペンタン、ヘキサン、シクロペンタン、シク
ロヘキサン、メチルシクロヘキサン、テトラリ
ン、デカリン、メチルナフタリン等の炭化水素
類、ベンゾニトリル、トルニトリル、アジポニト
リル、バレロニトリル、ブチロニトリル等のニト
リル類、酢酸エチル、酢酸オクチル、プロピオン
酸オクチル等のエステル類、クロルベンゼン、ジ
クロルベンゼン等のハロゲン化炭化水素類などが
あげられる。
本発明の方法において使用される温度範囲は、
用いる触媒系、N―モノ置換ホルムアミドの種類
および酸素との割合およびガス流中のホルムアミ
ドの濃度、滞留時間、ガスの速度などの反応条件
によつて異なるが、300〜600℃が好ましい。300
℃より低い温度では実質的に殆んど反応が進行し
ないし、600℃より高い温度では分解などの副反
応が起り、イソシアナートの収率および選択率が
低下するさらに、より好ましい温度範囲は350〜
550℃である。
本発明の方法によつてN―モノ置換ホルムアミ
ドを酸化してイソシアナートにする反応は、連続
式でも回分式でも行なうことができるが、連続式
に行なうのが好ましく、より好ましいのは、気体
状態のN―モノ置換ホルムアミドと酸素を触媒層
に連続的に接触させる、いわゆる気相流通反応方
式である。この場合、触媒層との接触時間は0.05
〜20秒が好ましく、さらに0.1〜10秒がより好ま
しい。
反応は通常、常圧下で行なわれるが、もちろん
減圧下または加圧下において行なつてもよい。特
に沸点の高いN―モノ置換ホルムアミドを用いる
場合には、300〜600℃の範囲、より好ましくは
350〜550℃の範囲で気化させるために減圧下で実
施することが好ましい。
本発明の方法によるイソシアナートの生成反応
は、一般式で次のように表わされる。
したがつて、イソシアナートの生成と同時に水
が副生してくるが、本発明の触媒を用いた場合、
この水とイソシアナートが二次的に反応して生成
すると考えられるアミンR―(NH2)oが殆んど検
出されないことから、反応域出口までは生成物同
志の反応は殆んど起つていないと思われる。
この水を生成物から除去する方法としては、反
応域から出てきた気体状のイソシアナートと水を
通常の蒸溜操作によつて分離する方法、またはイ
ソシアナートの良溶剤で水を殆んど溶解させない
溶剤中に反応生成ガスを導入する方法などがあ
り、比較的容易に水を除去できることがわかつ
た。
このような溶剤としては、ベンゼン、トルエ
ン、キシレン、テトラリン、デカリン、キユメ
ン、α―メチルナフタレンのような炭化水素類、
四塩化炭素、トリクロロエチレン、トリクロロエ
タン、クロルベンゼン、ジクロロベンゼン、ブロ
モベンゼン、α―クロロナフタレン、α―ブロモ
ナフタレンなどのハロゲン化炭化水素数、アジポ
ニトリル、ベンゾニトリルなどのニトリル数、酢
酸エチル、酢酸オクチルなどのエステル類などが
好ましい。
次に実施例にて本発明をさらに詳細に説明する
が、本発明は、これらの実施例によつて何ら限定
されるものではない。
これらの実施例は一般的に次のような方法で行
なわれた。
長さ40cm、直径2cmの石英製の反応管を長さ30
cmの縦型の電気炉中に、触媒層がほぼ中央に位置
するように固定した反応装置を用い、上部より原
料および酸素含有ガスを供給する流通式で反応を
行なつた。触媒層の上部には予熱層として石英砂
を充填した。反応温度は触媒層に熱電対入りの石
英管を挿入することによつて測定した。原料のN
―モノ置換ホルムアミドは予熱装置によつて予熱
され、ガス状または高温液状にして反応管に導入
された。生成物の同定、定量は、反応管出口のガ
ス状物質をガスクロマトグラフイーによつて行な
う方法と、反応生成物を1―ブロモナフタリンに
吸収させた液状物質をガスクロマトグラフイーで
行なう方法とを用いた。さらにイソシアナート基
の存在は、IRおよび生成液にアルコールまたは
アミンを加えてウレタンまたは尿素誘導体にする
ことによつても確認された。
実施例 1
塩化ニツケル水溶液中に炭化ケイ素を浸漬し、
乾燥後、空気を流しながら600℃で3時間処理す
ることによつて、2重量%のニツケルを含む酸化
ニツケル触媒を得た。N―n―ブチルホルムアミ
ド:酸素:窒素=4:8:82なるモル比の原料ガ
スを、この触媒層にSV=3000hr-1の空間速度で
導入した。反応温度450℃でのN―n―ブチルホ
ルムアミドの変換率は55%、n―ブチルイソシア
ナートの収率は38%、イソシアナートへの選択率
は69%であつた。反応温度を変えた場合のn―ブ
チルイソシアナートの収率と選択率は、次のとお
りであつた。
The present invention relates to a process for producing isocyanates from N-monosubstituted formamides. Although various methods for producing isocyanates have been proposed, most of the methods that have been carried out industrially involve the reaction of amines or their salts with phosgene. However, since phosgene is extremely poisonous and can be hydrolyzed and corrosive even in the presence of trace amounts of moisture, there is a desire to develop a method for producing isocyanates using other methods. As one such method, a method for producing isocyanate from formamide has recently been proposed in JP-A-54
-Disclosed by No. 39018. According to this,
N-monosubstituted formamide in the gas phase at approximately 300 ~
by oxidation at a temperature of about 600° C. in the presence of a catalyst of copper and/or one or more metals of Groups B and Groups 5 and 6 of the Periodic Table of the Elements. Although it has been described that isocyanates are produced, this method has poor isocyanate yields and selectivity when platinum group metals are used as catalysts, and satisfactory results are obtained only when silver is used. It is clear that only . In any case, this method uses expensive silver or platinum group metals as catalysts. Therefore, the present inventors have conducted extensive research on a method for producing isocyanates from N-monosubstituted formamides in relatively high yields and with high selectivity without using such expensive catalysts. As a result,
We have arrived at the present invention. That is, the present invention provides a method for producing isocyanate by oxidizing N-monosubstituted formamide using an oxygen-containing gas at a temperature in the range of 300 to 600°C. A method for producing isocyanate from N-monosubstituted formamide, characterized by using a catalyst comprising a metal or/and an oxide of a metal. Iron, cobalt, and nickel used in the present invention are respectively in a metallic state and an oxide. Examples of oxides include Fe 2 O 3 , Fe 3 O 4 , Co 2 O 3 , CoO,
An example is NiO, but of course oxides in other oxidation states may also be included. These metals and metal oxides can be used alone or in combination of two or more. Further, it is also possible to use, as a catalyst, a mixture of these metals and metal oxides with other metals or metal oxides which may or may not be catalytically active. These catalysts may be used without a carrier or may be supported on a carrier. The carrier should be selected from those that have no or low activity to cause decomposition or side reactions of the raw materials and products under the reaction conditions; examples of such carriers include silicon carbide, titanium dioxide, and silicon nitride. , boron carbide, zirconium oxide, calcined silica gel, titanium carbide, and mixtures thereof are preferred. Particularly preferred is a carrier containing silicon carbide as a main component. Common methods for supporting catalyst components on these carriers include immersing the carrier in a solution of salts of these metals, drying, and then subjecting the carrier to high-temperature heat treatment in air or an oxygen stream to form oxides. There is a method in which the material is made into a metallic state by heat treatment and then further heat treatment in a reducing atmosphere such as hydrogen or carbon monoxide, but of course any other method may be used to support the material. On these supports, the catalyst component may be a mixture of a metal state and various oxidation states. These catalyst components are preferably supported in an amount of 0.1% by weight or more on the carrier. The N-monosubstituted formamide used as a starting material in the present invention has the general formula In the formula, n represents an integer of 1 to 3. Further, R means an n-valent organic residue,
Represents a substituted or unsubstituted aliphatic group, alicyclic group, aromatic group, and aralkyl group. Any substituent may be used as long as it does not decompose or cause side reactions under the reaction conditions. For example, N-monosubstituted formamides having substituents such as chlorine, fluorine, nitrile groups, alkyl groups, alkoxy groups, acyl groups, and ester groups can be used in the present invention. As unsubstituted N-monosubstituted formamide,
For example, N-methylformamide, N-ethylformamide, N-propylformamide, N-
Butylformamide, N-pentylformamide, N-hexylformamide, N-heptylformamide, N-octylformamide, N-nonylformamide, N-decylformamide, N
-N-alkyl monoformamides such as undecylformamide, N-dodecylformamide, N-octadecylformamide, N-isopropylformamide, N-isobutylformamide, N-t-butylformamide, N-neopentylformamide; N-cyclopentylformamide ,
N-alicyclic monoformamides such as N-cyclohexylformamide and N-methylcyclohexylformamide; N-phenylformamide, N-
Naphthylformamide, N-pyridylformamide, N-indenylformamide, N-triazinylformamide, N-tolylformamide, N
- N-aryl monoformamides such as quinolylformamide and N-oxazolylformamide;
N-aralkyl monoformamides such as N-benzylformamide and N-phenethylformamide; N,N'-tetramethylene diformamide,
N,N'-hexamethylene diformamide, N,
N'-octamethylene diformamide, N,N'-
N,N'-alkylene cyformamides such as undecamethylene diformamide and N,N'-dodecamethylene diformamide; N,N'-1,4-cyclohexyldiformamide, N,N'-1,4
-dimethylcyclohexylformamide, N,
N'-isophorone diformamide, N,N'-cyclohexylmethylene diformamide, N,N'-
N,N'-alicyclic diformamides such as 4,4'-dicyclohexylmethane diformamide; N,
N'-1,4-phenylenediformamide, N,
N'-2,4-tolylene diformamide, N,
N'-2,6-tolylene diformamide, N,
N'-4,4'-diphenylmethane diformamide,
N,N'-4,4'-diphenyl ether diformamide, N,N'-1,4-naphthylene diformamide, N,N'-1,5-naphthylene diformamide, N,N'-2,6 -N,N'-aryl diformamides such as naphthylene diformamide;
N, such as N,N'-xylylene diformamide,
Examples include monoformamides and diformamides such as N'-aralkylene diformamides. In addition, triamines such as 1,8-diamino-4-aminomethyloctane, 1,2,3
- Triaminopropane, melamine, Tris (2-
Triformamides such as aminoethyl)amine can also be used in the present invention and can be converted to the corresponding triisocyanate. Of course, formamides obtained by substituting these unsubstituted formamides with the above-mentioned substituents can also be used. For example, formamide, which is an ester derivative of amino acids, can also be used. These include formamides such as methyl and ethyl esters of alanine, valine, and leucine; formamides such as dimethyl and diethyl esters of aspartic acid and glutamic acid; diformamides such as methyl and ethyl esters of lysine; Diformamides such as 2-aminoethyl esters of valine and leucine; di(2-aminoethyl) of aspartic acid and glutamic acid
Triformamide such as ester; 2- of lysine
Examples include triformamide such as aminoethyl ester. These N-monosubstituted formamides can be easily obtained by reacting the corresponding primary amine with a formic acid derivative such as a formic acid ester such as methyl formate or ethyl formate, or by reaction with carbon monoxide. It may also be manufactured by other methods. The oxygen-containing gas used in the present invention includes a predetermined amount of oxygen, and may be air or other gases that do not inhibit the reaction of air or pure oxygen, such as nitrogen, argon, helium, carbon dioxide, etc. It may be diluted with an inert gas. In some cases, it may also contain gases such as hydrogen, carbon monoxide, hydrocarbons, and halogenated hydrocarbons. The ratio of N-monosubstituted formamide and oxygen fed onto the catalyst is 0.5 to 50 equivalents, preferably 1 to 20 equivalents of oxygen per formamide group.
If the amount of oxygen is too small, the yield of isocyanate will be low, and if it is too large, oxidative decomposition, combustion, etc. will occur, resulting in a decrease in the yield of isocyanate. It is also a preferred method to dilute the reaction system with an inert gas such as nitrogen, argon, helium, carbon dioxide, etc. In this case, these inert gases are also used as carriers for the raw materials. The N-monosubstituted formamide supplied to the reaction system may be supplied as is or may be diluted with an inert solvent. Examples of such solvents include hydrocarbons such as benzene, toluene, xylene, biphenyl, pentane, hexane, cyclopentane, cyclohexane, methylcyclohexane, tetralin, decalin, methylnaphthalene, benzonitrile, tolnitrile, adiponitrile, valeronitrile. , nitriles such as butyronitrile, esters such as ethyl acetate, octyl acetate, and octyl propionate, and halogenated hydrocarbons such as chlorobenzene and dichlorobenzene. The temperature range used in the method of the invention is:
The reaction temperature is preferably 300 to 600°C, although it varies depending on the catalyst system used, the type of N-monosubstituted formamide and its proportion with oxygen, and the reaction conditions such as the concentration of formamide in the gas stream, residence time, and gas velocity. 300
At temperatures lower than 600°C, virtually no reaction proceeds; at temperatures higher than 600°C, side reactions such as decomposition occur, reducing the yield and selectivity of isocyanate. Furthermore, a more preferable temperature range is 350°C. ~
The temperature is 550℃. The reaction of oxidizing N-monosubstituted formamide to form an isocyanate by the method of the present invention can be carried out either continuously or batchwise, but it is preferably carried out continuously, and more preferably in a gaseous state. This is a so-called gas phase flow reaction method in which N-monosubstituted formamide and oxygen are brought into continuous contact with a catalyst layer. In this case, the contact time with the catalyst layer is 0.05
-20 seconds is preferable, and 0.1-10 seconds is more preferable. The reaction is usually carried out under normal pressure, but may of course be carried out under reduced pressure or increased pressure. In particular, when using N-monosubstituted formamide with a high boiling point, the temperature should be within the range of 300 to 600°C, more preferably
It is preferable to carry out under reduced pressure in order to vaporize at a temperature in the range of 350 to 550°C. The isocyanate production reaction according to the method of the present invention is expressed by the following general formula. Therefore, water is produced as a by-product at the same time as isocyanate is produced, but when using the catalyst of the present invention,
Since amine R-(NH 2 ) o , which is thought to be produced by a secondary reaction between this water and isocyanate, is hardly detected, it appears that almost no reaction between the products occurs up to the exit of the reaction zone. It seems that it is not. This water can be removed from the product by separating the water from the gaseous isocyanate that has come out of the reaction zone, or by using a good solvent for isocyanate to dissolve most of the water. It has been found that water can be removed relatively easily using methods such as introducing the reaction product gas into a solvent that does not contain water. Such solvents include hydrocarbons such as benzene, toluene, xylene, tetralin, decalin, kyumene, α-methylnaphthalene,
Number of halogenated hydrocarbons such as carbon tetrachloride, trichloroethylene, trichloroethane, chlorobenzene, dichlorobenzene, bromobenzene, α-chloronaphthalene, α-bromonaphthalene, number of nitriles such as adiponitrile, benzonitrile, etc., ethyl acetate, octyl acetate, etc. Esters and the like are preferred. EXAMPLES Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples in any way. These examples were generally performed in the following manner. A quartz reaction tube with a length of 40 cm and a diameter of 2 cm was
The reaction was carried out in a flow-through type reactor in which the catalyst layer was fixed in a vertical electric furnace with a catalyst layer located approximately in the center, and raw materials and oxygen-containing gas were supplied from the top. The upper part of the catalyst layer was filled with quartz sand as a preheating layer. The reaction temperature was measured by inserting a quartz tube containing a thermocouple into the catalyst layer. Raw material N
- Monosubstituted formamide was preheated by a preheating device and introduced into the reaction tube in the form of a gas or a hot liquid. Identification and quantification of the product can be carried out using gas chromatography on the gaseous substance at the outlet of the reaction tube, or gas chromatography on the liquid substance obtained by absorbing the reaction product in 1-bromonaphthalene. there was. Furthermore, the presence of isocyanate groups was also confirmed by IR and by adding alcohol or amine to the product solution to make urethane or urea derivatives. Example 1 Silicon carbide is immersed in a nickel chloride aqueous solution,
After drying, a nickel oxide catalyst containing 2% by weight of nickel was obtained by treating at 600° C. for 3 hours while flowing air. A raw material gas having a molar ratio of Nn-butylformamide:oxygen:nitrogen=4:8:82 was introduced into this catalyst layer at a space velocity of SV=3000 hr -1 . At a reaction temperature of 450°C, the conversion rate of N-n-butylformamide was 55%, the yield of n-butyl isocyanate was 38%, and the selectivity to isocyanate was 69%. The yield and selectivity of n-butyl isocyanate when the reaction temperature was changed were as follows.
【表】
実施例 2
N―n―ブチルホルムアミド:酸素:窒素=
1:1:10なるモル比の原料ガスを、実施例1と
同一の触媒層に、SV=2000hr-1の空間速度で導
入することで反応を行なつた。反応温度430℃で
のn―ブチルイソシアナートの収率は35%、選択
率は78%であつた。
実施例 3
硝酸コバルト水溶液中に炭化ケイ素を浸漬し、
乾燥後、空気を流しながら600℃で3時間処理す
ることによつて、0.5重量%のコバルトを含む酸
化コバルト触媒を得た。N―n―ブチルホルムア
ミド:酸素:窒素=1:2:15なるモル比の原料
ガスを、この触媒層にSV=6000hr-1の空間速度
で導入した、反応温度390℃でのN―n―ブチル
ホルムアミドの変換率は52%、n―ブチルイソシ
アナートの収率は23%、選択率は44%であつた。
実施例 4
ニツケル粉末を錠剤状に成型した触媒3gを用
い、ホルムアニリド:酸素:窒素=1:2:20な
るモル比の原料ガスを、この触媒層にSV=
4000hr-1の空間速度で導入した。反応温度420℃
でのフエニルイソシアナートの収率は35%、選択
率は84%であつた。
実施例 5
触媒として鉄粉を用いて、実施例1と同様の条
件下で反応を行なつた。380℃と440℃でのn―ブ
チルイソシアナートの収率と選択率は、それぞれ
10%,39%;14%,20%であつた。
実施例 6
ヘキサメチレンジホルムアミドとアジポニトリ
ルとビフエニルとの混合物(重量比1:2:5)
を、実施例1と同じ触媒層に供給した。ヘキサメ
チレンジホルムアミド:酸素:窒素のモル比は
1:2:30であり、SV=1500hr-1であつた。450
℃でのヘキサメチレンジイソシアナートの収率は
18%、選択率は38%であつた。
実施例 7
実施例1と同様にして二酸化チタンを担体とす
る酸化ニツケル触媒を調製した。N―シクロヘキ
シルホルムアミドを用いる以外は、実施例1と同
様の方法によつて反応を行なつたところ、420℃
でN―シクロヘキシルイソシアナートが収率31
%、選択率63%で得られた。
実施例 8
鉄とニツケルの混合粉末(重量比1:2)を錠
剤状に成型したものを触媒として用いた。
1,8―ジアミノ―4―アミノメチルオクタン
をギ酸メチルと反応させることによつて相当する
トリホルムアミドを得た。トリホルムアミド:酸
素:窒素=2:5:45なるモル比の原料を470℃
の触媒層に導入した。触媒との接触時間は約2秒
であつた。生成物を蒸留によつて分離し、IRに
よつてイソシアナート基の存在を確認し、またホ
ルムアミド基の存在しないことも確認した。ジブ
チルアミンによる滴定法によつて定量したとこ
ろ、1,8―ジイソシアナート―4―イソシアナ
ートメチルオクタンが収率13%、選択率18%で得
られたことがわかつた。
実施例 9
コバルト粉末を用いる以外は、実施例4と同様
にしてフエニルイソシアナートを合成した。収率
は20%、選択率は60%であつた。[Table] Example 2 N-n-butylformamide: oxygen: nitrogen =
The reaction was carried out by introducing raw material gases in a molar ratio of 1:1:10 into the same catalyst layer as in Example 1 at a space velocity of SV=2000 hr -1 . At a reaction temperature of 430°C, the yield of n-butyl isocyanate was 35% and the selectivity was 78%. Example 3 Immersing silicon carbide in a cobalt nitrate aqueous solution,
After drying, a cobalt oxide catalyst containing 0.5% by weight of cobalt was obtained by treating at 600° C. for 3 hours while flowing air. A raw material gas with a molar ratio of N-n-butylformamide:oxygen:nitrogen = 1:2:15 was introduced into this catalyst layer at a space velocity of SV = 6000 hr -1 , and the N-n- The conversion of butylformamide was 52%, the yield of n-butyl isocyanate was 23%, and the selectivity was 44%. Example 4 Using 3 g of a catalyst made of nickel powder molded into a tablet, raw material gas with a molar ratio of formanilide:oxygen:nitrogen = 1:2:20 was applied to this catalyst layer at SV=
It was introduced at a space velocity of 4000hr -1 . Reaction temperature 420℃
The yield of phenyl isocyanate was 35% and the selectivity was 84%. Example 5 A reaction was carried out under the same conditions as in Example 1 using iron powder as a catalyst. The yield and selectivity of n-butyl isocyanate at 380℃ and 440℃ are respectively
10%, 39%; 14%, 20%. Example 6 Mixture of hexamethylene diformamide, adiponitrile and biphenyl (weight ratio 1:2:5)
was supplied to the same catalyst layer as in Example 1. The molar ratio of hexamethylene diformamide:oxygen:nitrogen was 1:2:30 and SV = 1500 hr -1 . 450
The yield of hexamethylene diisocyanate at °C is
The selection rate was 38%. Example 7 A nickel oxide catalyst using titanium dioxide as a carrier was prepared in the same manner as in Example 1. The reaction was carried out in the same manner as in Example 1 except for using N-cyclohexylformamide, and the reaction temperature was 420°C.
yield of N-cyclohexyl isocyanate is 31.
%, with a selectivity of 63%. Example 8 A mixed powder of iron and nickel (weight ratio 1:2) molded into a tablet was used as a catalyst. The corresponding triformamide was obtained by reacting 1,8-diamino-4-aminomethyloctane with methyl formate. Triformamide:Oxygen:Nitrogen = 2:5:45 molar ratio of raw materials at 470℃
was introduced into the catalyst layer. The contact time with the catalyst was about 2 seconds. The product was isolated by distillation and IR confirmed the presence of isocyanate groups and also the absence of formamide groups. Quantification by titration with dibutylamine revealed that 1,8-diisocyanato-4-isocyanatomethyloctane was obtained in a yield of 13% and a selectivity of 18%. Example 9 Phenyl isocyanate was synthesized in the same manner as in Example 4 except that cobalt powder was used. The yield was 20% and the selectivity was 60%.
Claims (1)
囲の温度で酸素含有ガスを用いて酸化することに
よりイソシアナートを製造する方法において、
鉄、コバルト、ニツケルから選ばれた1種または
それ以上の金属または/および金属の酸化物から
成る触媒を用いることを特徴とするN―モノ置換
ホルムアミドからイソシアナートの製造方法。 2 触媒がニツケルまたは/および酸化ニツケル
である特許請求の範囲第1項記載のイソシアナー
トの製造方法。[Claims] 1. A method for producing isocyanate by oxidizing N-monosubstituted formamide using an oxygen-containing gas at a temperature in the range of 300 to 600°C, comprising:
1. A method for producing isocyanate from N-monosubstituted formamide, which comprises using a catalyst comprising one or more metals selected from iron, cobalt, and nickel and/or oxides of metals. 2. The method for producing isocyanate according to claim 1, wherein the catalyst is nickel or/and nickel oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP367080A JPS56100752A (en) | 1980-01-18 | 1980-01-18 | Preparation of isocyanate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP367080A JPS56100752A (en) | 1980-01-18 | 1980-01-18 | Preparation of isocyanate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56100752A JPS56100752A (en) | 1981-08-12 |
| JPS6317052B2 true JPS6317052B2 (en) | 1988-04-12 |
Family
ID=11563856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP367080A Granted JPS56100752A (en) | 1980-01-18 | 1980-01-18 | Preparation of isocyanate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100752A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161457U (en) * | 1988-04-27 | 1989-11-09 | ||
| JPH0215451U (en) * | 1988-07-08 | 1990-01-31 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10968168B2 (en) | 2017-05-15 | 2021-04-06 | Asahi Kasei Kabushiki Kaisha | Isocyanate production method |
-
1980
- 1980-01-18 JP JP367080A patent/JPS56100752A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161457U (en) * | 1988-04-27 | 1989-11-09 | ||
| JPH0215451U (en) * | 1988-07-08 | 1990-01-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56100752A (en) | 1981-08-12 |
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