JPS631725B2 - - Google Patents
Info
- Publication number
- JPS631725B2 JPS631725B2 JP3369280A JP3369280A JPS631725B2 JP S631725 B2 JPS631725 B2 JP S631725B2 JP 3369280 A JP3369280 A JP 3369280A JP 3369280 A JP3369280 A JP 3369280A JP S631725 B2 JPS631725 B2 JP S631725B2
- Authority
- JP
- Japan
- Prior art keywords
- paste
- element body
- electrode
- metal
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000003638 chemical reducing agent Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 229910021645 metal ion Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- 238000007772 electroless plating Methods 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 239000012493 hydrazine sulfate Substances 0.000 description 1
- 229910000377 hydrazine sulfate Inorganic materials 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- -1 isopropylamine Chemical compound 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Ceramic Capacitors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】
本発明は、セラミツク等より成る素体に化学的
手法によつて電極を形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming electrodes on an element body made of ceramic or the like by a chemical method.
磁器コンデンサ、正特性サーミスタもしくはバ
リスタ等の酸化物磁器半導体またはIC基板等の
各種の電子部品に電極または配線パターンを形成
する方法として、従来より、ニツケル、銅等の卑
金属を主成分とする無電解メツキ法が知られてい
る。無電解メツキ法は、高価な銀焼付電極の代用
としてコストダウンを図るため、あるいは素体の
有する電気的特性を有効に引き出すため等に採用
されるものであるが、無電解メツキ層の密着性を
同上させるため、無電解メツキ処理の前に、予
め、素体に対し、表面の粗面化、洗浄、脱脂、乾
燥、鋭敏化等の処理を施した後、更にこの素体
を、PdCl2またはSnCl2等を含有する溶液中に浸
漬して表面を活性化させる必要があつた。このた
め、前処理工程が多く、かつ複雑で、製造コスト
が高くなるという欠点があつた。 Conventionally, electroless methods mainly composed of base metals such as nickel and copper have been used as a method for forming electrodes or wiring patterns on various electronic components such as oxide ceramic semiconductors or IC boards such as ceramic capacitors, positive temperature coefficient thermistors, and varistors. The Metsuki method is known. The electroless plating method is used to reduce costs as a substitute for expensive silver-baked electrodes, or to effectively bring out the electrical properties of the element, but the adhesion of the electroless plating layer In order to achieve the same effect as above, the element body is subjected to surface roughening, cleaning, degreasing, drying, sensitization, etc. before electroless plating treatment, and then this element body is further treated with PdCl 2 Alternatively, it was necessary to activate the surface by immersing it in a solution containing SnCl 2 or the like. For this reason, there are disadvantages in that the number of pretreatment steps is large and complicated, and the manufacturing cost is high.
更に上述のようにして活性化された素体を、ニ
ツケルまたは銅等を主成分とする無電解メツキ浴
中に浸漬し、素体の全表面に無電解メツキ層を付
着させる構成であるため、電極形成領域にのみ限
定した部分選択メツキは不可能であつて、無電解
メツキ処理後に不要なメツキ層を化学的エツチン
グまたはセンタレス研磨もしくはサンドブレスト
等によつて除去せざるを得なかつた。このため、
従来の電極形成方法には次のような欠点もあつ
た。 Furthermore, since the element body activated as described above is immersed in an electroless plating bath mainly composed of nickel or copper, an electroless plating layer is attached to the entire surface of the element body. Partial selective plating limited only to the electrode formation region is impossible, and unnecessary plating layers must be removed by chemical etching, centerless polishing, sandblasting, etc. after electroless plating. For this reason,
Conventional electrode forming methods also have the following drawbacks.
(1) 不要なメツキ層の除去工程が必要となり、工
程数の増加、製造コスト高を招く。(1) A process for removing unnecessary plating layers is required, which increases the number of processes and increases manufacturing costs.
(2) センタレス研磨またはサンドブレスト等によ
りメツキ層を削除する場合に、メツキ層の界面
剥離、接着強度の低下、それに伴う経時的劣
化、素体の破損もしくは割れまたはマイクロク
ラツク等を発生し、信頼性の高いものを歩留ま
りよく製造することが困難であつた。特に素体
が薄い場合には機械的強度の不足から、製品化
を断念せざるを得ない場合もあつた。(2) When removing the plating layer by centerless polishing or sandblasting, etc., interfacial peeling of the plating layer, decrease in adhesive strength, associated deterioration over time, damage or cracking of the element body, or microcracks, etc. may occur. It has been difficult to manufacture highly reliable products with good yields. Particularly in cases where the element body is thin, commercialization has sometimes had to be abandoned due to a lack of mechanical strength.
(3) 化学的エツチング法によつてメツキ層の不要
部分を除去する場合には、エツチング処理工程
が多く、製造コスト高になり、またエツチング
液等により素体が損傷を受け、電気的諸特性が
劣化する。(3) When unnecessary parts of the plating layer are removed by chemical etching, there are many etching steps, which increases manufacturing costs, and the element body is damaged by the etching solution, which may impair electrical characteristics. deteriorates.
(4) メツキ層の接着強度が弱く、またメツキ液の
残留イオンがメツキ層と素体との界面に介在
し、メツキ層の剥離、それによる電気的諸特性
の劣化、経時的劣化等を招く。(4) The adhesive strength of the plating layer is weak, and residual ions from the plating liquid are present at the interface between the plating layer and the element, causing peeling of the plating layer, resulting in deterioration of electrical characteristics, and deterioration over time. .
本発明は上述する従来技術の欠点を除去し、電
極の除去工程を必要とすることなく、電極を形成
すべき位置に、所定パターンの電極を直接的に形
成することができ、工程数が少なく、経済的で、
しかも信頼性の高い電極を形成し得る電極形成方
法を提供することを目的とする。 The present invention eliminates the above-mentioned drawbacks of the prior art, and allows electrodes in a predetermined pattern to be formed directly at positions where electrodes are to be formed without requiring an electrode removal process, reducing the number of steps. , economical;
Moreover, it is an object of the present invention to provide an electrode forming method that can form highly reliable electrodes.
上記目的を達成するため、本発明に係る電極形
成方法は、素体の電極を形成すべき領域に還元剤
を含有するペーストを塗布した後、該ペーストに
金属イオンを接触させて金属を析出生成させるこ
とを特徴とする。 In order to achieve the above object, the electrode forming method according to the present invention involves applying a paste containing a reducing agent to a region of an element body where an electrode is to be formed, and then bringing metal ions into contact with the paste to precipitate and generate metal. It is characterized by causing
第1図は本発明の一実施例を示す。まず、誘電
体磁器等の適当な材料より成る素体1の、電極を
形成すべき領域に、所定の電極パターンとなるよ
うに、還元剤を含有するペースト2をスクリーン
印刷法等の手段によつて印刷塗布する(第1図
b)。前記還元剤としては、次亜燐酸ソーダ、抱
水ヒドラジンや硫酸ヒドラジン等のヒドラジン
類、イソプロピルアミン、ジエソイソプロピルア
ミンまたはトリエチルアミン等のアミン類、ホル
マリン等が適当である。この還元剤を適当なペー
ストラツカに混合してペーストを調製するわけで
あるが、混合比率としては、還元剤1%に対しペ
ーストラツカ99%程度が適当である。 FIG. 1 shows an embodiment of the invention. First, a paste 2 containing a reducing agent is applied to the area where electrodes are to be formed on the element body 1 made of a suitable material such as dielectric ceramic by means such as screen printing so as to form a predetermined electrode pattern. Then print and apply (Fig. 1b). Suitable examples of the reducing agent include sodium hypophosphite, hydrazines such as hydrazine hydrate and hydrazine sulfate, amines such as isopropylamine, diesoisopropylamine and triethylamine, and formalin. A paste is prepared by mixing this reducing agent in a suitable paste racker, and a suitable mixing ratio is about 1% reducing agent to 99% paste racker.
上述のように、還元剤を含有するペーストとし
てこれを素体上に塗布する構成であると、電極を
形成すべき領域を、スクリーン印刷法等の手段に
よつて、高精度のパターンとして、簡単に特定す
ることができる。 As mentioned above, if the paste containing the reducing agent is applied onto the element body, the area where the electrodes are to be formed can be easily formed into a highly accurate pattern by means such as screen printing. can be specified.
次に、還元剤ペースト2を塗布した素体1を、
金属イオン溶液3中に浸漬する(第1図c)。す
るとペースト2中に含有される還元剤により、溶
液3中の金属イオンM2+が還元され、ペースト2
を塗布した部分にそのパターン通りの金属膜4が
析出生成する(第1図d)。 Next, the element body 1 coated with the reducing agent paste 2 is
Immerse in metal ion solution 3 (Fig. 1c). Then, the metal ion M 2+ in solution 3 is reduced by the reducing agent contained in paste 2, and paste 2
A metal film 4 according to the pattern is deposited on the coated area (FIG. 1d).
前述の金属イオン溶液3としては、金、銀、
銅、ニツケル等の各種の金属の塩または硫化物の
飽和水溶液を、純水またはエチレングリコール等
の親水性有機溶剤に溶かしたものが適当である。
たとえば銅イオン溶液3を得る場合を例にとつて
説明すると、硫酸銅の五水塩(CuSO4、5H2O)
を20g/の割合で純水中へ溶解して飽和水溶液
を作り、これをエチレングリコール中へ1対20〜
30以上の割合で混入して充分撹拌混合して調製す
る。なお、金属の析出反応を促進させるため、溶
液3が液温が80〜90℃となるように加温すること
が望ましい。またニツケルの場合は硫酸ニツケル
(NiSO4・7H2O)溶液を使用する。 The metal ion solution 3 mentioned above includes gold, silver,
A saturated aqueous solution of salts or sulfides of various metals such as copper and nickel dissolved in pure water or a hydrophilic organic solvent such as ethylene glycol is suitable.
For example, to explain the case of obtaining copper ion solution 3, copper sulfate pentahydrate (CuSO 4 , 5H 2 O)
Dissolve 20g/g in pure water to make a saturated aqueous solution, and add this to ethylene glycol at a ratio of 1:20 ~
Prepare by mixing at a ratio of 30 or more and thoroughly stirring and mixing. In addition, in order to promote the metal precipitation reaction, it is desirable to heat the solution 3 to a temperature of 80 to 90°C. In the case of nickel, a nickel sulfate (NiSO 4 .7H 2 O) solution is used.
この後、洗浄、乾燥工程等を経ることにより完
成品を得ることとなるが、前記金属膜がニツケル
等の半田付け性の悪いものである場合には、金属
膜の上に回転バレルによる電気メツキにより、
錫、半田メツキ等を施してもよい。 After that, a finished product is obtained by going through a cleaning, drying process, etc. If the metal film is made of a material with poor solderability such as nickel, electroplating is performed on the metal film using a rotating barrel. According to
Tin, solder plating, etc. may also be applied.
以上述べたように、本発明に係る電子部品の電
極形成方法は、素体の電極を形成すべき領域に還
元剤を含有するペーストを塗布した後、該ペース
トに金属イオンを接触させて還元反応により金属
を析出生成させることを特徴とするから、次のよ
うな効果がある。 As described above, in the method for forming electrodes of electronic components according to the present invention, a paste containing a reducing agent is applied to a region of an element body where an electrode is to be formed, and then metal ions are brought into contact with the paste to cause a reduction reaction. Since the metal is precipitated and generated by the method, it has the following effects.
(1) 電極を形成すべき領域に限つて、部分選択的
に電極を形成することができるので、
(イ) 電極の不要部分を除去する工程が不要とな
り、工程数が減少し、量産性が向上し、製造
コストが低下する。(1) Since electrodes can be formed selectively only in the area where electrodes are to be formed, (a) the process of removing unnecessary parts of the electrodes is not required, the number of processes is reduced, and mass productivity is improved. improved and lower manufacturing costs.
(ロ) センタレス研磨等に見られたような、電極
の界面剥離、接着強度の低下、経時的劣化、
素体の破損もしくは割れまたはマイクロクラ
ツクの発生等の各種トラブルを生じる余地が
なく、高信頼度のものを歩留まり良く製造す
ることができる。 (b) Interfacial peeling of electrodes, decrease in adhesive strength, deterioration over time, as seen in centerless polishing, etc.
There is no possibility of various troubles such as breakage or cracking of the element body or generation of microcracks, and highly reliable products can be manufactured at a high yield.
(ハ) 素体の厚みが薄くなつても、何らの障害も
受けることなく、電極を形成することができ
る。 (c) Even if the thickness of the element body becomes thinner, electrodes can be formed without any problems.
(ニ) 化学的エツチング処理に見られたような素
体の損傷を生じる余地がない。 (d) There is no possibility of damage to the element body as seen in chemical etching treatments.
(2) 還元剤を含有するペーストを塗布して電極を
形成すべき領域を特定するものであるから、ス
クリーン印刷法等の手段によつて、高精度の電
極パターンを簡単に形成することができる。(2) Since the area in which the electrode should be formed is specified by applying a paste containing a reducing agent, a highly accurate electrode pattern can be easily formed by means such as screen printing. .
(3) ペーストを塗布する構成であるから、その前
処理工程が従来の無電解メツキ法等に比較して
遥かに単純になり、工程の減少、製造コストの
低下等の効果が得られる。(3) Since the paste is applied, the pretreatment process is much simpler than the conventional electroless plating method, etc., and effects such as a reduction in the number of steps and a reduction in manufacturing costs can be obtained.
(4) 金属イオンの種類を選定することにより、電
子部品の特性、用途等に適した金属より成る電
極を形成することができる。たとえば、電極の
コストダウン、シルバーマイグレーシヨンまた
は半田喰われ現象を防止することが主目的なら
ば、ニツケルや銅等の卑金属イオンを使用すれ
ばよい。(4) By selecting the type of metal ion, it is possible to form an electrode made of a metal suitable for the characteristics and uses of electronic components. For example, if the main purpose is to reduce the cost of the electrode, prevent silver migration, or prevent solder eating, base metal ions such as nickel or copper may be used.
なお、本発明はセラミツクより成る素体に限ら
ず、たとえば合成樹脂、ガラス質などより成る素
体に対して電極を形成する場合にも、同様に適用
が可能である。 Note that the present invention is not limited to an element body made of ceramic, but can be similarly applied to the case where electrodes are formed on an element body made of synthetic resin, glass, etc., for example.
第1図は本発明に係る電子部品の電極形成方法
を示す図である。
1……素体、2……還元剤を含有するペース
ト、3……金属イオン溶液、4……金属膜。
FIG. 1 is a diagram showing a method for forming electrodes of an electronic component according to the present invention. DESCRIPTION OF SYMBOLS 1... Elementary body, 2... Paste containing a reducing agent, 3... Metal ion solution, 4... Metal film.
Claims (1)
するペーストを塗布した後、該ペーストに金属イ
オンを接触させて金属膜を析出生成させることを
特徴とする電子部品の電極形成方法。 2 前記ペーストを塗布した後、前記素体を金属
イオン溶液中に浸漬して金属膜を析出生成させる
ことを特徴とする特許請求の範囲第1項に記載の
電極形成方法。 3 前記析出生成した金属膜の上に、錫または半
田メツキ等の半田付け性の良好な金属層を、電気
メツキ法により形成することを特徴とする特許請
求の範囲第1項に記載の電極形成方法。[Claims] 1. An electronic component characterized in that a paste containing a reducing agent is applied to a region of an element where an electrode is to be formed, and then metal ions are brought into contact with the paste to precipitate and generate a metal film. electrode formation method. 2. The electrode forming method according to claim 1, wherein after applying the paste, the element body is immersed in a metal ion solution to precipitate and generate a metal film. 3. Electrode formation according to claim 1, characterized in that a metal layer with good solderability, such as tin or solder plating, is formed on the precipitated metal film by electroplating. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3369280A JPS56130911A (en) | 1980-03-17 | 1980-03-17 | Method of forming electrode of electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3369280A JPS56130911A (en) | 1980-03-17 | 1980-03-17 | Method of forming electrode of electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56130911A JPS56130911A (en) | 1981-10-14 |
| JPS631725B2 true JPS631725B2 (en) | 1988-01-13 |
Family
ID=12393464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3369280A Granted JPS56130911A (en) | 1980-03-17 | 1980-03-17 | Method of forming electrode of electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56130911A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3143995A1 (en) * | 1981-11-05 | 1983-05-19 | Preh, Elektrofeinmechanische Werke, Jakob Preh, Nachf. Gmbh & Co, 8740 Bad Neustadt | THICK FILM CAPACITOR IN PRESSURE SWITCHING TECHNOLOGY |
-
1980
- 1980-03-17 JP JP3369280A patent/JPS56130911A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56130911A (en) | 1981-10-14 |
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