JPS6317333B2 - - Google Patents
Info
- Publication number
- JPS6317333B2 JPS6317333B2 JP58064716A JP6471683A JPS6317333B2 JP S6317333 B2 JPS6317333 B2 JP S6317333B2 JP 58064716 A JP58064716 A JP 58064716A JP 6471683 A JP6471683 A JP 6471683A JP S6317333 B2 JPS6317333 B2 JP S6317333B2
- Authority
- JP
- Japan
- Prior art keywords
- tray
- wafer
- processing
- chamber
- conveyance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
- H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Packaging Frangible Articles (AREA)
- Belt Conveyors (AREA)
- Reciprocating Conveyors (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はインライン型処理装置の自特搬送に係
り、特に枠状のトレイに半導体ウエハ等の試料を
垂直に取付けて搬送する搬送機構に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to automatic transport in an in-line processing apparatus, and particularly to a transport mechanism that vertically attaches a sample such as a semiconductor wafer to a frame-shaped tray and transports the sample.
(b) 技術の背景
半導体プロセスにおいて、集積回路基板に施す
各種の処理は厳しい管理条件のもとで、各種の物
理的、化学的処理がなされ、高い信頼度が要求さ
れる。また一方では各種産業分野へのIC,LSI等
の普及が拡大されるにつれて生産性は増大してい
る。また微細加工技術の進展に伴い、半導体ウエ
ハは大口径化し、更に高集積、高密度が要請され
る。このため歩留りの向上或は品質維持のため処
理装置の自動化は半導体プロセスの必須の条件と
なつている。(b) Background of the Technology In the semiconductor process, various physical and chemical treatments are performed on integrated circuit boards under strict control conditions, and high reliability is required. On the other hand, productivity is increasing as ICs, LSIs, etc. become more widespread in various industrial fields. Further, as microfabrication technology advances, semiconductor wafers are becoming larger in diameter, and higher integration and density are required. For this reason, automation of processing equipment has become an essential condition for semiconductor processing in order to improve yield or maintain quality.
(c) 従来技術と問題点
一般的なMOSICの製造プロセスでは40及至60
工程の処理工程が必要でありその一例として金属
膜又はシリサイド膜等の合金金属膜を半導体ウエ
ハ上に被着形成させるスパツタ装置がある。通常
品質の安定性、量産効果を得るため自動供給機構
を備えたインライン型処理装置が用いられる。(c) Conventional technology and problems In a typical MOSIC manufacturing process, 40 to 60
Processing steps are necessary, and one example thereof is a sputtering apparatus for depositing and forming an alloy metal film such as a metal film or a silicide film on a semiconductor wafer. Usually, in-line processing equipment equipped with an automatic feeding mechanism is used to achieve stable quality and mass production.
第1図は従来のインライン方式のスパツタ装置
を示す構成図、第2図はスパツタ処理室の概要図
である。 FIG. 1 is a block diagram showing a conventional in-line type sputtering apparatus, and FIG. 2 is a schematic diagram of a sputtering processing chamber.
図においてスパツタ処理室1への半導体ウエハ
2の供給は、第1のローデイング室3内でキヤリ
ア4よりゴムベルト又はチエンベルト5に移替え
られ、第1のロードロツク室6を経て導入され
る。処理された半導体ウエハ2は再びチエンベル
ト5に移替され第2のロードロツク室6′及び第
2のローデイング室3′を経てキヤリア4に収容
される。チエンベルト5に載置された半導体ウエ
ハ2は水平移動し第2図に示すようにスパツタ処
理室1のウエハホルダー7に移替られ、ウエハホ
ルダー7はスパツタガン8に対して対向する位置
に移動しスパツタ処理される。 In the figure, a semiconductor wafer 2 is supplied to a sputter processing chamber 1 by being transferred from a carrier 4 to a rubber belt or chain belt 5 in a first loading chamber 3, and introduced through a first load lock chamber 6. The processed semiconductor wafer 2 is again transferred to the chain belt 5, and is housed in the carrier 4 via the second load lock chamber 6' and the second loading chamber 3'. The semiconductor wafer 2 placed on the chain belt 5 is moved horizontally and transferred to the wafer holder 7 in the sputter processing chamber 1 as shown in FIG. 2, and the wafer holder 7 is moved to a position facing the sputter gun 8. Spatter treated.
このように構成されるインライン装置では半導
体ウエハ2は水平に維持されウエハ上に付着する
微細なゴミにより膜質を低下させる。またチエン
ベルト5上より落下したり位置ずれにより周辺部
が搬送機構部に当たり破損することもある。スパ
ツタ処理室1の遮蔽構造、ウエハホルダー7の移
動等メカ的に構造が複雑となり故障を起し易く保
守が容易でない。 In the in-line device configured in this manner, the semiconductor wafer 2 is maintained horizontally, and the film quality is degraded by fine dust adhering to the wafer. Further, the peripheral portion may hit the conveyance mechanism and be damaged due to falling from the chain belt 5 or misalignment. The mechanical structure, such as the shielding structure of the sputter processing chamber 1 and the movement of the wafer holder 7, is complicated, making it easy to break down and making maintenance difficult.
(d) 発明の目的
本発明は処理装置内での処理工程進路上の半導
体ウエハの上へのゴミ等の付着とか破損を防止
し、ウエハに対するスパツタ等の処理の場合に、
ウエハホルダ等への移替え及びウエハの被処理面
の転換等の動作を必要とせず、しかもウエハサイ
ズの変更にも容易に対応しうるような小型化可能
なインライン型処理装置を目的とする。(d) Purpose of the Invention The present invention prevents the adhesion of dust and damage to semiconductor wafers on the way of the processing process in a processing apparatus, and prevents damage to the semiconductor wafers when processing spatter on the wafers.
The object of the present invention is to provide an in-line processing device that can be miniaturized and does not require operations such as transferring to a wafer holder or changing the surface of the wafer to be processed, and can easily accommodate changes in wafer size.
(e) 発明の構成
上記目的は本発明によればウエハの処理工程進
路の上・下には、トレイ搬送機構を少なくともい
づれか一方に有するガイドレールが設けられ、ウ
エハを垂直に塔載する枠状トレイはその上下いづ
れかに結合部を有し、トレイはその結合部がガイ
ドレールの搬送機構と結合するように、上下のガ
イドレール間に支持され、搬送機構の搬送動作に
よつて結合部を介してトレイは工程進路方向に搬
送されることを特徴とするインライン型処理装置
によつて達せられる。(e) Structure of the Invention According to the present invention, a guide rail having a tray conveyance mechanism on at least one side is provided above and below the wafer processing path, and a frame-shaped frame on which the wafer is vertically mounted is provided. The tray has a coupling part on either the upper or lower side, and the tray is supported between the upper and lower guide rails so that the coupling part is coupled with the conveyance mechanism of the guide rail, and the tray is moved through the coupling part by the conveyance operation of the conveyance mechanism. This is accomplished by an in-line processing device characterized in that the trays are conveyed in the process direction.
(f) 発明の実施例 以下本発明の実施例を図面により詳述する。(f) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第3図は本発明の一実施例であるインライン型
処理装置を示す構成図、第4図は第3図の搬送駆
動系を示す要部概要図、第5図は第4図のA−
A′部断面図である。 FIG. 3 is a configuration diagram showing an in-line type processing apparatus which is an embodiment of the present invention, FIG. 4 is a schematic diagram of main parts showing the conveyance drive system of FIG. 3, and FIG.
It is a sectional view of section A'.
図において真空処理室11に半導体ウエハ12
を搬送する搬送系に上下のガイドレール13,1
4を設け、この上下のガイドレール間にトレイ1
5を取付ける。第1のローデイング室16でウエ
ハ12をトレイ15に収容する。下部ガイドレー
ルにはトレイ搬送機構としてモータ駆動により連
動する溝付回転軸が設けられ、その溝とトレイ1
5の下部に備えた結合部である凹凸部が噛み合つ
てトレイ15はロードロツク室17(真空予備
室)次いで真空処理室11に順次移送される。真
空処理室11ではストツパにより所定位置に停止
し、その状態でスパツタ処理される。 In the figure, a semiconductor wafer 12 is placed in a vacuum processing chamber 11.
Upper and lower guide rails 13, 1 are installed in the conveyance system that conveys the
Tray 1 is installed between the upper and lower guide rails.
Install 5. The wafer 12 is housed in the tray 15 in the first loading chamber 16 . The lower guide rail is provided with a grooved rotating shaft that is interlocked by a motor drive as a tray conveyance mechanism, and the groove and tray 1
The concave and convex portions, which are connecting portions provided at the lower part of the tray 15, are engaged with each other, and the tray 15 is sequentially transferred to the load lock chamber 17 (vacuum preparatory chamber) and then to the vacuum processing chamber 11. In the vacuum processing chamber 11, the material is stopped at a predetermined position by a stopper, and sputter processing is performed in that state.
スパツタ処理後第2のロードロツク17′を経
て第2のローデイング室16′に送られ処理され
たウエハ12をトレイ15より取り外し、ウエハ
キヤリアに格納する。この操作を繰返すことによ
り自動化処理装置が得られる。駆動系は第4図、
第5図に示すように上部ガイドレール13には自
在に回転する回転ローラ18を設け、一方下部ガ
イドレール14には搬送機構としてのモータと連
動する溝付回転軸20、及びトレイ15を支持す
るローラ18′をそれぞれ設けこのガイドレール
間にトレイ15を挟着させる。モータの駆動によ
り溝付回転軸20は回転駆動し、トレイ15の下
部縁部に設けた結合部としての凹凸部21は溝2
0aと噛み合いトレイ15は溝付回転軸20の回
転により移動する。 After the sputtering process, the wafer 12 is sent to the second loading chamber 16' via the second load lock 17', and the processed wafer 12 is removed from the tray 15 and stored in a wafer carrier. By repeating this operation, an automated processing device is obtained. The drive system is shown in Figure 4.
As shown in FIG. 5, the upper guide rail 13 is provided with a rotary roller 18 that rotates freely, while the lower guide rail 14 supports a grooved rotary shaft 20 that is interlocked with a motor as a transport mechanism and a tray 15. Rollers 18' are provided, and the tray 15 is sandwiched between these guide rails. The grooved rotary shaft 20 is driven to rotate by the drive of the motor, and the uneven portion 21 as a connecting portion provided on the lower edge of the tray 15 is connected to the groove 2.
0a and the engaging tray 15 are moved by the rotation of the grooved rotating shaft 20.
モータに正逆回転を与えることにより逆方向へ
の搬送も容易でありこの場合左右のローデイング
室が交互に使用できる。またスパツタ装置等の真
空排気を行なう装置では特に真空度が重要であり
真空度を監視するセンサー例えば真空計指示によ
り各室間のゲートバルブ開閉を行ない、ゲートバ
ルブ開閉と搬送駆動系とを同時制御する。即ちゲ
ートバルブが閉じている間は搬送用トレイは停止
する。即ち溝付回転軸20を停止させる。 By giving forward and reverse rotation to the motor, it is easy to transport in the opposite direction, and in this case, the left and right loading chambers can be used alternately. In addition, the degree of vacuum is particularly important in equipment that performs vacuum evacuation such as sputtering equipment, and a sensor that monitors the degree of vacuum, such as a vacuum gauge, opens and closes the gate valves between each chamber based on instructions, and simultaneously controls the opening and closing of the gate valves and the conveyance drive system. do. That is, the conveyance tray is stopped while the gate valve is closed. That is, the grooved rotating shaft 20 is stopped.
第6図は本発明の一実施例であるローデイング
機構を示す斜視図であり、第7図はトレイを示す
斜視図イ及び側面図ロである。 FIG. 6 is a perspective view showing a loading mechanism according to an embodiment of the present invention, and FIG. 7 is a perspective view A and a side view B showing a tray.
図においてウエハ12はブレード23によりウ
エハカセツト22から持上げられ静電吸着装置に
よりウエハ12は第7図に示すトレイ15に移替
えられる。トレイ15の底部に溝付回転軸(第4
図20)の溝と同一ピツチで形成された凹凸部2
1を設け、溝部と噛み合せ嵌合する。またトレイ
15の略中央部にはウエハ12の処理すべき表面
を露出させるための窓15aを有し、更に支持片
15bを設けてウエハ12の脱落を防止する。ト
レイ15は耐熱性及び耐腐食性のある石英又はス
テンレス等を用いる。 In the figure, a wafer 12 is lifted from a wafer cassette 22 by a blade 23, and transferred to a tray 15 shown in FIG. 7 by an electrostatic chuck device. A grooved rotating shaft (fourth
Uneven part 2 formed with the same pitch as the groove in Fig. 20)
1 is provided and meshed and fitted with the groove. In addition, the tray 15 has a window 15a approximately in the center thereof to expose the surface of the wafer 12 to be processed, and a support piece 15b is provided to prevent the wafer 12 from falling off. The tray 15 is made of heat-resistant and corrosion-resistant quartz, stainless steel, or the like.
本実施例ではスパツタ処理を行なうインライン
型処理装置について説明したがその他の処理装置
に応用してよいことは勿論である。 Although this embodiment describes an in-line type processing apparatus that performs sputter processing, it goes without saying that the present invention may be applied to other processing apparatuses.
(g) 発明の効果
以上詳細に説明したように本発明の搬送機構を
有するインライン型処理装置とすることにより、
従来に比してウエハの破損及びゴミ等の汚染は改
善され、装置は簡易化され小型化が容易となる。
トレイ搬送であるためインチサイズの異なるウエ
ハでもトレイを交換することにより対応できる等
大きな効果がありその応用範囲は広い。(g) Effects of the invention As explained in detail above, by providing an in-line processing apparatus having the conveyance mechanism of the present invention,
Compared to the conventional method, damage to wafers and contamination by dust are improved, and the apparatus becomes simpler and more compact.
Because it uses tray transportation, it has great effects such as being able to handle wafers of different inch sizes by exchanging trays, and its range of applications is wide.
第1図は従来のインライン方式のスパツタ装置
を示す構成図、第2図はスパツタ処理室の概要
図、第3図は本発明の一実施例であるインライン
型処理装置を示す構成図、第4図は第3図の搬送
駆動部を示す要部概要図、第5図は第4図のA−
A′部断面図、第6図は本発明の一実施例である
ローデイング機構を示す斜視図であり、第7図は
トレイを示す斜視図イ及び側面図ロである。
図中、11……真空処理室、12……ウエハ、
13,14……ガイドレール、15……トレイ、
16……ローデイング室、17……ロードロツク
室、18……回転ローラ、20……溝付回転軸、
21……凹凸部、22……ウエハカセツト、23
……ブレード。
FIG. 1 is a block diagram showing a conventional in-line type sputtering device, FIG. 2 is a schematic diagram of a sputter processing chamber, FIG. 3 is a block diagram showing an in-line type processing device which is an embodiment of the present invention, and FIG. The figure is a schematic diagram of main parts showing the conveyance drive unit in Figure 3, and Figure 5 is A- in Figure 4.
FIG. 6 is a perspective view showing a loading mechanism according to an embodiment of the present invention, and FIG. 7 is a perspective view A and a side view B showing a tray. In the figure, 11... vacuum processing chamber, 12... wafer,
13, 14...Guide rail, 15...Tray,
16... Loading chamber, 17... Load lock chamber, 18... Rotating roller, 20... Grooved rotating shaft,
21... uneven portion, 22... wafer cassette, 23
……blade.
Claims (1)
搬送機構を少なくともいづれか一方に有するガイ
ドレールが設けられ、ウエハを垂直に塔載する枠
状トレイはその上下いづれかに結合部を有し、ト
レイはその結合部がガイドレールの搬送機構と結
合するように、上下のガイドレール間に支持さ
れ、搬送機構の搬送動作によつて結合部を介して
トレイは工程進路方向に搬送されることを特徴と
するインライン型処理装置。1 Guide rails having a tray transport mechanism on at least one side are provided above and below the wafer processing path, and the frame-shaped tray on which the wafer is vertically mounted has a connecting part on either the top or bottom, and the tray is supported between the upper and lower guide rails so that the joint part is joined to the transport mechanism of the guide rail, and the tray is transported in the process direction via the joint part by the transport operation of the transport mechanism. In-line processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58064716A JPS59189643A (en) | 1983-04-13 | 1983-04-13 | In-line-type treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58064716A JPS59189643A (en) | 1983-04-13 | 1983-04-13 | In-line-type treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59189643A JPS59189643A (en) | 1984-10-27 |
| JPS6317333B2 true JPS6317333B2 (en) | 1988-04-13 |
Family
ID=13266148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58064716A Granted JPS59189643A (en) | 1983-04-13 | 1983-04-13 | In-line-type treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59189643A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2665886B2 (en) * | 1994-10-24 | 1997-10-22 | 東京エレクトロン株式会社 | Probe device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572029A (en) * | 1978-11-27 | 1980-05-30 | Nec Corp | Tray for semiconductor wafer |
| JPS5821318A (en) * | 1981-07-28 | 1983-02-08 | Toshiba Corp | Transporting system for wafer |
-
1983
- 1983-04-13 JP JP58064716A patent/JPS59189643A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59189643A (en) | 1984-10-27 |
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