JPS6319857B2 - - Google Patents
Info
- Publication number
- JPS6319857B2 JPS6319857B2 JP23285384A JP23285384A JPS6319857B2 JP S6319857 B2 JPS6319857 B2 JP S6319857B2 JP 23285384 A JP23285384 A JP 23285384A JP 23285384 A JP23285384 A JP 23285384A JP S6319857 B2 JPS6319857 B2 JP S6319857B2
- Authority
- JP
- Japan
- Prior art keywords
- compound vapor
- nozzle
- sample
- spraying device
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 claims description 33
- 238000005507 spraying Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 description 1
- KGNDCEVUMONOKF-UGPLYTSKSA-N benzyl n-[(2r)-1-[(2s,4r)-2-[[(2s)-6-amino-1-(1,3-benzoxazol-2-yl)-1,1-dihydroxyhexan-2-yl]carbamoyl]-4-[(4-methylphenyl)methoxy]pyrrolidin-1-yl]-1-oxo-4-phenylbutan-2-yl]carbamate Chemical compound C1=CC(C)=CC=C1CO[C@H]1CN(C(=O)[C@@H](CCC=2C=CC=CC=2)NC(=O)OCC=2C=CC=CC=2)[C@H](C(=O)N[C@@H](CCCCN)C(O)(O)C=2OC3=CC=CC=C3N=2)C1 KGNDCEVUMONOKF-UGPLYTSKSA-N 0.000 description 1
- 229940126543 compound 14 Drugs 0.000 description 1
- 229940125833 compound 23 Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
(a) 産業上の利用分野
本考案は半導体製造工程で使用されるマスクの
白色欠陥及び黒色欠陥の修理を行なうマスクリペ
ア装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a mask repair device for repairing white defects and black defects in masks used in semiconductor manufacturing processes.
(b) 従来の技術
化合物蒸気の存在する雰囲気内でサンプルの所
定位置にイオンビームを照射し、照射位置にパタ
ーン膜を形成する方法は、半導体やマスクのリペ
ア方法として注目されている。ところで化合物蒸
気をサンプルの所定位置に供給する方法として
は、新実験化学講座２、丸善、371頁−379頁に述
べられているようなヌツセンセルが使用されてい
る。第３図に示すように、化合物２３を収納した
ヌツセンセル２４は、外周部に設けられたヒータ
ー２５により加熱され、加熱により蒸発した化合
物は、オリフイス２６を通して噴出される。尚ヌ
ツセンセル２４には熱電対２７が設けられ、温度
コントローラにより加熱温度を調整できるように
なつている。(b) Prior Art A method of irradiating a sample at a predetermined position with an ion beam in an atmosphere containing compound vapor and forming a patterned film at the irradiation position is attracting attention as a repair method for semiconductors and masks. By the way, as a method for supplying compound vapor to a predetermined position of a sample, a Nutsusen cell as described in New Experimental Chemistry Course 2, Maruzen, pp. 371-379 is used. As shown in FIG. 3, the Nutsen cell 24 containing the compound 23 is heated by a heater 25 provided on the outer periphery, and the compound evaporated by heating is ejected through an orifice 26. Note that the Nutsusen cell 24 is provided with a thermocouple 27, so that the heating temperature can be adjusted by a temperature controller.
(c) 発明が解決しようとする問題点
第３図で説明した方法においては、オリフイス
２６から噴出する化合物蒸気は指向性を持たず広
い範囲にわたる。ところが、マスクの欠陥の大き
さは、１mm×１mm以下であるため、欠陥領域以外
に噴出された化合物蒸気は無駄になるばかりでな
く様々な不都合が生じる原因となる。例えば、イ
オンビーム照射位置以外に噴出した化合物ガスは
試料室の真空度を低下させるため真空排気系の負
荷を大きくさせるだけでなく、イオンビーム照射
系を汚染し、イオンビームの長時間安定性が悪く
なる。特に電界放出形イオン源を用いたマスクリ
ペア装置においては、イオン源に化合物が付着し
イオン源の寿命が短かくなつてしまう等の多くの
問題が生ずる。(c) Problems to be Solved by the Invention In the method explained in FIG. 3, the compound vapor ejected from the orifice 26 has no directionality and spreads over a wide range. However, since the size of a mask defect is 1 mm x 1 mm or less, the compound vapor ejected outside the defect area is not only wasted, but also causes various inconveniences. For example, compound gas ejected outside the ion beam irradiation position not only lowers the degree of vacuum in the sample chamber and increases the load on the evacuation system, but also contaminates the ion beam irradiation system and impairs the long-term stability of the ion beam. Deteriorate. Particularly in a mask repair apparatus using a field emission type ion source, many problems occur, such as compounds adhering to the ion source and shortening the life of the ion source.
本発明は、真空中において化合物蒸気を所定位
置に供給する場合における上記の問題点を解決す
るものである。 The present invention solves the above-mentioned problems when supplying compound vapor to a predetermined location in a vacuum.
(d) 問題点を解決しようとする手段
本発明は、化合物を収納するための化合物収納
孔と、化合物蒸気を所定位置に供給するノズルか
らなるガス吹付装置において、ノズルを前後に駆
動させる例えばエアシリンダの如き駆動体と、ノ
ズルの前進位置を定めるストツパーを備えること
により、化合物蒸気の吹付けを所定の領域に限定
するようにしたことを特徴とするマスクリペア装
置である。(d) Means for Solving the Problems The present invention provides a gas spraying device comprising a compound storage hole for storing a compound and a nozzle for supplying compound vapor to a predetermined position. This mask repair device is characterized in that it includes a driving body such as a cylinder and a stopper that determines the forward position of the nozzle, thereby limiting the spraying of compound vapor to a predetermined area.
又、駆動体又はその近傍にノズルの位置を検出
するマイクロスイツチを設け、ノズルの位置が後
退した時のみ試料台の駆動及び試料室と予備試料
室の間のゲートバルブの開閉が可能になるように
したことを特徴とするマスクリペア装置である。 In addition, a micro switch is installed on or near the drive body to detect the position of the nozzle, so that the sample stage can be driven and the gate valve between the sample chamber and the preliminary sample chamber can be opened and closed only when the nozzle position is retracted. This is a mask repair device characterized by:
(e) 実施例
以下、図面に従つて本発明の実施例について説
明する。第１図において、イオン源１から放出さ
れたイオンビーム２は、イオンビーム照射系３の
対物レンズ４により試料ステージ５に載せられた
試料６の表面に集束させられる。化合物蒸気吹付
装置７により試料表面に吹き付けられた化合物蒸
気とイオンビームの反応により、試料表面に薄膜
が形成させられる。試料室９及び予備試料室１１
は、真空ポンプ８により真空になつている。試料
６は、ゲートバルブ１０の開閉により出し入れを
行なう。(e) Examples Examples of the present invention will be described below with reference to the drawings. In FIG. 1, an ion beam 2 emitted from an ion source 1 is focused by an objective lens 4 of an ion beam irradiation system 3 onto the surface of a sample 6 placed on a sample stage 5. A thin film is formed on the sample surface by the reaction between the compound vapor sprayed onto the sample surface by the compound vapor spraying device 7 and the ion beam. Sample chamber 9 and preliminary sample chamber 11
is evacuated by a vacuum pump 8. The sample 6 is taken in and out by opening and closing the gate valve 10.
この際化合物蒸気吹付装置は細いノズルからビ
ーム状に化合物蒸気を放出する構造となつている
ため、化合物蒸気の絶体量を少なくすることがで
きる。第２図に化合物蒸気吹付装置の具体例を示
めす。１２は化合物蒸気を試料６の欠陥位置に供
給するためのノズルである。１３は化合物収納孔
であつて、この内部に蓄えられた化合物１４が加
熱され、その蒸気がノズルに導かれるようになつ
ている。ノズルの一方の端部近傍にはストツパー
１５がとりつけられている。そしてノズルの該端
部はエアシリンダー１６に接続されている。この
エアシリンダ１６を駆動することにより化合物蒸
気吹付装置のノズル先端部は前後に移動する。こ
の際ノズル先端部を前進させると、ストツパー１
５が支持体１７に当たりそれ以上前進できなくな
る。この時のノズル先端と試料６の距離は最適値
に設定されており、少ない化合物蒸気量でマスク
欠陥の修正が可能となる。 At this time, since the compound vapor spraying device is structured to emit compound vapor in a beam form from a narrow nozzle, the absolute amount of compound vapor can be reduced. FIG. 2 shows a specific example of a compound vapor spraying device. 12 is a nozzle for supplying compound vapor to the defect position of the sample 6. Reference numeral 13 denotes a compound storage hole, in which the compound 14 stored is heated and its vapor is guided to the nozzle. A stopper 15 is attached near one end of the nozzle. The end of the nozzle is connected to an air cylinder 16. By driving this air cylinder 16, the nozzle tip of the compound vapor spraying device moves back and forth. At this time, when the nozzle tip is moved forward, the stopper 1
5 hits the support 17 and cannot move forward any further. At this time, the distance between the nozzle tip and the sample 6 is set to an optimal value, and mask defects can be corrected with a small amount of compound vapor.
次にノズル１２を後退させていくと、所定の移
動量の後、化合物収納孔とノズルとの連絡が遮断
されて化合物蒸気の供給が中止される。同時にス
トツパー１５がマイクロスイツチ１８を作動させ
る。 Next, when the nozzle 12 is moved backward, after a predetermined amount of movement, communication between the compound storage hole and the nozzle is cut off, and the supply of compound vapor is stopped. At the same time, the stopper 15 activates the micro switch 18.
このマイクロスイツチからの信号に基いて、今
までロツクされていた試料台１９の駆動が可能と
なる。又試料室９と予備試料室の間のゲートバル
ブ１０の開閉が可能となる。 Based on the signal from this microswitch, the sample stage 19, which has been locked until now, can now be driven. Furthermore, the gate valve 10 between the sample chamber 9 and the preliminary sample chamber can be opened and closed.
すなわちノズル１２の先端が後退した時のみ試
料６の着脱が実行できる。従つてノズル１２の先
端とサンプル押さえ２１、サンプルパレツト２２
が接触するという事故が防止できる。 That is, the sample 6 can be attached and detached only when the tip of the nozzle 12 is retracted. Therefore, the tip of the nozzle 12, the sample holder 21, and the sample pallet 22
Accidents such as contact can be prevented.
(f) 発明の効果
本発明によれば、ノズルを所望の位置に近づけ
ることにより化合物蒸気の吹付量を少なくするこ
とができる。そのため真空排気系の負荷が少なく
てすむ。又試料室内の汚れが少なくなり、イオン
源を長寿命化できる。(f) Effects of the Invention According to the present invention, the amount of compound vapor sprayed can be reduced by moving the nozzle closer to a desired position. Therefore, the load on the vacuum evacuation system can be reduced. Furthermore, the amount of dirt in the sample chamber is reduced, and the life of the ion source can be extended.
又ノズル先端部とサンプルパレツト押えの接触
という事故を防止できる。これによりノズル先端
の破損が防げる。 Also, accidents such as contact between the nozzle tip and the sample pallet holder can be prevented. This prevents damage to the nozzle tip.
第１図は本発明にかかるマスクリペア装置であ
る。第２図は本発明に用いられる化合物蒸気吹付
装置の具体例である。第３図は従来の化合物蒸気
吹付装置の例である。
５……試料台、７……化合物蒸気吹付装置、１
０……ゲートバルブ、１２……ノズル、１６……
エアシリンダ、１５……ストツパー、１８……マ
イクロスイツチ。
FIG. 1 shows a mask repair apparatus according to the present invention. FIG. 2 shows a specific example of a compound vapor spraying device used in the present invention. FIG. 3 is an example of a conventional compound vapor spraying device. 5... Sample stand, 7... Compound vapor spraying device, 1
0... Gate valve, 12... Nozzle, 16...
Air cylinder, 15...Stopper, 18...Micro switch.
Claims (1)
る試料台と、試料台に対して集束荷電粒子を照射
する荷電粒子照射系と、荷電粒子照射位置に化合
物蒸気を吹付ける化合物蒸気吹付装置と、予備試
料室を備えたマスクリペア装置において、化合物
蒸気吹付装置先端部のノズルを任意に前後移動可
能にしたことを特徴とするマスクリペア装置。 ２ 特許請求範囲第１項において、化合物蒸気吹
付装置先端部のノズルが、荷電粒子照射位置から
後退した時のみ試料台の駆動及び試料室と予備試
料室の間のゲートバルブの開閉が可能なようにす
るイニタロツク回路を設けたことを特徴とするマ
スクリペア装置。[Claims] 1. A sample stage with a mask placed in a vacuum chamber and driven in the X-Y direction, a charged particle irradiation system that irradiates the sample stage with focused charged particles, and a compound vapor blown at the charged particle irradiation position. 1. A mask repair device comprising a compound vapor spraying device and a preliminary sample chamber, characterized in that a nozzle at the tip of the compound vapor spraying device can be moved back and forth arbitrarily. 2 In claim 1, the nozzle at the tip of the compound vapor spraying device is configured such that the sample stage can be driven and the gate valve between the sample chamber and the preliminary sample chamber can be opened and closed only when the nozzle at the tip of the compound vapor spraying device is retreated from the charged particle irradiation position. A mask repair device characterized by being provided with an init lock circuit.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59232853A JPS61110140A (en) | 1984-11-05 | 1984-11-05 | Mask repairing device |
| EP85903053A EP0221184B1 (en) | 1984-06-26 | 1985-06-21 | Mask repairing apparatus |
| DE8585903053T DE3579236D1 (en) | 1984-06-26 | 1985-06-21 | REPAIR OF MASKS. |
| PCT/JP1985/000349 WO1986000426A1 (en) | 1984-06-26 | 1985-06-21 | Mask repairing apparatus |
| US07/227,469 US4930439A (en) | 1984-06-26 | 1988-08-02 | Mask-repairing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59232853A JPS61110140A (en) | 1984-11-05 | 1984-11-05 | Mask repairing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61110140A JPS61110140A (en) | 1986-05-28 |
| JPS6319857B2 true JPS6319857B2 (en) | 1988-04-25 |
Family
ID=16945838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59232853A Granted JPS61110140A (en) | 1984-06-26 | 1984-11-05 | Mask repairing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61110140A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320221U (en) * | 1986-07-24 | 1988-02-10 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0316111B1 (en) * | 1987-11-09 | 1994-08-17 | AT&T Corp. | Mask repair |
| JP3310136B2 (en) * | 1994-09-17 | 2002-07-29 | 株式会社東芝 | Charged beam device |
-
1984
- 1984-11-05 JP JP59232853A patent/JPS61110140A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6320221U (en) * | 1986-07-24 | 1988-02-10 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61110140A (en) | 1986-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |