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JPS6320091B2 - - Google Patents
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JPS6320091B2 - - Google Patents

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Publication number
JPS6320091B2
JPS6320091B2 JP15974980A JP15974980A JPS6320091B2 JP S6320091 B2 JPS6320091 B2 JP S6320091B2 JP 15974980 A JP15974980 A JP 15974980A JP 15974980 A JP15974980 A JP 15974980A JP S6320091 B2 JPS6320091 B2 JP S6320091B2
Authority
JP
Japan
Prior art keywords
resistance
voltage
coefficient thermistor
positive
resistance coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15974980A
Other languages
Japanese (ja)
Other versions
JPS5783122A (en
Inventor
Tetsuo Yoshino
Tokuo Takeuchi
Toshisuke Hishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15974980A priority Critical patent/JPS5783122A/en
Publication of JPS5783122A publication Critical patent/JPS5783122A/en
Publication of JPS6320091B2 publication Critical patent/JPS6320091B2/ja
Granted legal-status Critical Current

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  • Emergency Protection Circuit Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は通信用保安器に関し、特に電子交換機
などの通信装置に使用するに適した通信用保安器
に関する。 従来この種の保安器として、構成の簡単さから
第1図のようなものが使われている。ここで1
1,11′は炭素避雷器または自復放電管などで
あり、12,12′はヒユーズまたは自復ヒート
コイルまたは正抵抗係数サーミスタなどである。 一方被保護機器側の半導体素子化が進むにつれ
て、機器全体の耐電圧の低下と、半導体素子特有
の高速破壊現象が顕在化し、第1図のような保安
器では、性能面で不十分となる欠点がある。 上記欠点を考慮した従来技術として、第2図に
示す方法もある。すなわち第2図において、2
1,21′は例えば前記自復放電管11,11′に
対応し、22,22′は例えば前記ヒユーズ12,
12′に対応し、23,23′は被保護機器に結ば
れる端子を示している。25,25′は非線形イ
ンピーダンスを有する半導体素子であり、主とし
てMOV(金属酸化物バリスタ)またはツエナー
ダイオード等が使用される。24,24′は電流
制限特性を持たせるための抵抗体として、ヒート
コイルまたはヒユーズ等が用いられる。上記第2
図の構成による保安器では、被保護機器の耐電圧
に合わせた構成要素を設計する、いわゆる耐圧協
調設計が必要となる。すなわち誘導雷等の高エネ
ルギーサージの侵入おいて、被保護機器の端子2
3,23′の電圧を機器の耐電圧以下に抑制する
ためには、例えば自復放電管21,21′が動作
するまで、25,25′(例えばMOV)の端子
電圧を該機器の耐電圧以下に保持すると同時に、
抵抗体24,24′を流れる電流の電圧降下によ
つて生じる電圧差との和が、21,21′(例え
ば自復放電管)の動作開始に十分な値となるよう
に、各要素の特性を選択しなければならない。実
用的な例として被保護機器の耐電圧を350Vとし、
例えば交換機のような被保護機器から送出される
最大電圧を210Vとし、例えばMOV25,25′
の特性が第3図で示されるようなものである場
合、第4図のような波形の誘導雷サージに対する
設計諸元は第1表に示す値となる。
The present invention relates to a communication protector, and more particularly to a communication protector suitable for use in a communication device such as an electronic exchange. Conventionally, as this type of protector, one shown in FIG. 1 has been used because of its simple configuration. Here 1
1 and 11' are carbon lightning arresters or self-recovering discharge tubes, and 12 and 12' are fuses, self-recovering heat coils, positive resistance coefficient thermistors, and the like. On the other hand, as the use of semiconductor elements in protected equipment progresses, the withstand voltage of the entire equipment decreases and the high-speed breakdown phenomenon peculiar to semiconductor elements becomes apparent, and the protector shown in Figure 1 becomes insufficient in terms of performance. There are drawbacks. There is also a method shown in FIG. 2 as a conventional technique that takes the above drawbacks into consideration. That is, in Figure 2, 2
1 and 21' correspond to, for example, the self-recovering discharge tubes 11 and 11', and 22 and 22' correspond to, for example, the fuses 12 and 11'.
12', and 23 and 23' indicate terminals connected to the protected equipment. 25 and 25' are semiconductor elements having nonlinear impedance, and MOV (metal oxide varistors) or Zener diodes are mainly used. As resistors 24 and 24', heat coils, fuses, etc. are used to provide current limiting characteristics. 2nd above
The protector with the configuration shown in the figure requires so-called voltage co-design, in which components are designed to match the voltage resistance of the protected equipment. In other words, when a high-energy surge such as induced lightning strikes, terminal 2 of the protected equipment
In order to suppress the voltage at terminals 3 and 23' below the withstand voltage of the equipment, for example, the terminal voltage at terminals 25 and 25' (for example, MOV) must be kept at the withstand voltage of the equipment until the self-recovering discharge tubes 21 and 21' operate. While keeping below,
The characteristics of each element are adjusted so that the sum of the voltage difference caused by the voltage drop of the current flowing through the resistors 24 and 24' becomes a value sufficient to start the operation of 21 and 21' (for example, a self-recovering discharge tube). must be selected. As a practical example, assume that the withstand voltage of the protected equipment is 350V,
For example, if the maximum voltage sent out from the protected equipment such as a switch is 210V, for example, MOV25, 25'
If the characteristics are as shown in FIG. 3, the design specifications for an induced lightning surge with a waveform as shown in FIG. 4 will be the values shown in Table 1.

【表】 このような設計が可能であれば、線路側より
1KVのピーク電圧をもつ電気サージが内部イン
ピーダンス零の電源として印加されても、被保護
機器端子23,23′と大地の間に発生する電圧
を340Vに抑制し、かつ一定時間の動作遅れの後、
21,21′(例えば自復放電管)に対し十分に
動作させ得る電圧を印加させることができる。 しかし、この種の保安器が例えば交換器の通信
線に挿入されることから、特性要素としての抵抗
値を上記設計例のように22Ωと大きくすること
は、伝送特性において挿入損失を増大させシステ
ムの性能を劣化させることになる。またこの抵抗
値を低くするには、第2図の25,25′におい
て、MOVの寸法の増大などを許容するか、飛躍
的な特性の向上をはからなければならず、またツ
エナーダイオードを使用する場合には、単方向性
素子であることから、使用数量の増大と価格のた
め、小型で安価な高性能保安器を実現することが
困難である欠点を有する。 本発明の目的は、負性抵抗を有する電圧制限素
子と非線型抵抗素子と正抵抗係数サーミスタを使
用し、かつ非線形抵抗素子と正抵抗係数サーミス
タとを熱的に結合させることにより、上記の欠点
を除去し、小型で安価で十分な保護性能を有し、
伝送特性などの装置性能の劣化を生じない高性能
な保安器を提供することにある。 本発明の構成について説明すると、本発明は、
電子交換機などの通信装置に使用される通信用保
安器において、線路側入力端子と接地間に負性抵
抗を有する電圧制限素子が接続され、前記線路側
入力端子と被保護機器側出力端子間に正抵抗係数
サーミスタが接続され、前記被保護機器側出力端
子と接地間に負性抵抗を有する非線形抵抗素子と
が接続され、かつ前記正抵抗係数サーミスタと前
記非線形抵抗素子とが熱的に結合されていること
を特徴とする通信用保安器である。 以下本発明を実施例により図面を参照して説明
する。 第5図は本発明の構成要素の1つである負性抵
抗を有する電圧制限素子の電圧電流特性であり、
このような特性を有するものには、放電現象を利
用した炭素避雷器、自復放電管、SCR等がある。
この種の素子は通常の状態では高抵抗領域にある
が、印加電圧がある大きさ(放電開始電圧)を超
えると、負性抵抗領域を通過して低抵抗領域に遷
移するという特性を有している。 第6図には金属酸化物バリスタ(MOV)を代
表例とする非線形抵抗素子の特性を示す。この種
の素子は負性抵抗領域を持つことなく、ある電圧
(制限電圧)を境に明確な高抵抗領域および明確
な低抵抗領域を有する。このようなものとしては
MOV、ツエナーダイオード等がある。 第7図に正抵抗係数サーミスタの特性を示す。
温度がキユリー温度Tc(およそ200℃以下)を超
えると、抵抗値の大幅な増大がおこる。 第8図はこれらの構成要素を用いた本発明の保
安器の一実施例の外観図を示している。 第9図はこの実施例における回路図である。本
実施例では熱伝導率の良好なAl2O3セラミツク基
板31上に、本発明における非線形抵抗素子の一
例として粉末焼成により作成されたMOV33お
よび正抵抗係数サーミスタ34を接近して配置し
熱的結合を実現している。この正抵抗係数サーミ
スタ34の抵抗値は通信回線の使用時に流れる電
流(交換機ではおよそ20mA〜200mAが通例で
ある)による自己発熱に対して低抵抗領域にあ
り、かつ所望の伝送特性の得られるような値(例
えば5Ω程度)に選ばれている。この状態で誘導
雷サージが到来した場合に、正抵抗係数サーミス
タ34に電流が流れ自己発熱するが、これだけで
は十分な速度での温度上昇は得られない。一方
MOV33にも同一の電流が流れるが、MOV3
3に消費される電力は低抵抗状態の正抵抗係数サ
ーミスタ34の電力に比し格段に大きいため、急
速に温度上昇を起す。ここでこの温度上昇が熱的
に結合している正抵抗係数サーミスタ34の温度
も上昇させ、第7図に示すようにキユリー点を超
えて急速な抵抗値上昇を生じさせる。従来技術で
説明したような条件では十分な保護性能を得るた
めに必要な抵抗は22Ω程度であり、低抵抗状態5
Ωのわずか5倍程度で十分であるのに比し、第7
図に示す様に正抵抗係数サーミスタ34に100倍
の抵抗変化をおこさせるのに必要な温度は、キユ
リー温度に対して、20℃程度の温度上昇があれば
良い。このため通常使用時の動作点をキユリー点
付近におくことにより、高速に抵抗変化を生成す
ることが可能である。一方高抵抗状態の正抵抗係
数サーミスタ34は自復放電管32の両端に放電
開始に十分な電圧を与えるため、MOV33およ
び正抵抗係数サーミスタ34自身の発熱による自
己破壊以前に放電を開始させることができる。耐
圧協調設計に加え上述のようにセラミツク回路基
板31を用いて正抵抗係数サーミスタ34と
MOV33の良好な熱設計により、通常使用時に
は低抵抗、サージ到来時には高抵抗となるような
特性が実現でき、保護性能と伝送特性の両立が可
能となる。 以上に説明したように、本発明によれば、負性
抵抗を有する電圧制限素子と非線形抵抗素子と正
抵抗係数サーミスタとを使用し、非線形抵抗素子
と正抵抗係数サーミスタとの熱的結合が得られる
ように構成することにより、小型で安価で十分な
保護性能を有し、伝送特性などの装置性能の劣化
を生じない高性能な保安器を実現させる効果があ
る。
[Table] If this kind of design is possible, from the track side
Even if an electrical surge with a peak voltage of 1KV is applied as a power source with zero internal impedance, the voltage generated between the protected equipment terminals 23, 23' and the ground is suppressed to 340V, and after a certain period of operation delay. ,
21, 21' (for example, a self-recovering discharge tube) can be applied with a voltage sufficient to operate them. However, since this type of protector is inserted into the communication line of a switch, for example, increasing the resistance value as a characteristic element to 22Ω as in the design example above increases insertion loss in the transmission characteristics and the system performance will deteriorate. In addition, in order to lower this resistance value, it is necessary to allow an increase in the size of the MOV or to dramatically improve the characteristics at 25 and 25' in Figure 2, and also to use a Zener diode. In this case, since it is a unidirectional element, it has the disadvantage that it is difficult to realize a small and inexpensive high-performance protector due to the increase in the number of uses and the cost. An object of the present invention is to solve the above drawbacks by using a voltage limiting element having negative resistance, a nonlinear resistance element, and a positive resistance coefficient thermistor, and by thermally coupling the nonlinear resistance element and the positive resistance coefficient thermistor. It is small, inexpensive, and has sufficient protection performance.
The object of the present invention is to provide a high-performance protector that does not cause deterioration of device performance such as transmission characteristics. To explain the configuration of the present invention, the present invention has the following features:
In a communication protector used in communication devices such as electronic exchanges, a voltage limiting element having a negative resistance is connected between a line side input terminal and ground, and a voltage limiting element having a negative resistance is connected between the line side input terminal and the protected equipment side output terminal. A positive resistance coefficient thermistor is connected, a nonlinear resistance element having negative resistance is connected between the protected device side output terminal and ground, and the positive resistance coefficient thermistor and the nonlinear resistance element are thermally coupled. This is a communication safety device that is characterized by: The present invention will be explained below by way of examples with reference to the drawings. FIG. 5 shows the voltage-current characteristics of a voltage-limiting element having negative resistance, which is one of the components of the present invention.
Items with such characteristics include carbon lightning arresters, self-recovering discharge tubes, and SCRs that utilize electric discharge phenomena.
This type of element is in a high resistance region under normal conditions, but when the applied voltage exceeds a certain level (discharge starting voltage), it has the characteristic of passing through a negative resistance region and transitioning to a low resistance region. ing. FIG. 6 shows the characteristics of a nonlinear resistance element of which a metal oxide varistor (MOV) is a typical example. This type of element does not have a negative resistance region, but has a clear high resistance region and a clear low resistance region bordering on a certain voltage (limiting voltage). As something like this
There are MOV, Zener diode, etc. Figure 7 shows the characteristics of the positive resistance coefficient thermistor.
When the temperature exceeds the Curie temperature Tc (approximately below 200°C), a significant increase in resistance occurs. FIG. 8 shows an external view of an embodiment of the protector of the present invention using these components. FIG. 9 is a circuit diagram in this embodiment. In this embodiment, an MOV 33 produced by powder firing as an example of the nonlinear resistance element of the present invention and a positive resistance coefficient thermistor 34 are arranged close to each other on an Al 2 O 3 ceramic substrate 31 having good thermal conductivity. Achieving a combination. The resistance value of the positive resistance coefficient thermistor 34 is in a low resistance range against self-heating due to the current flowing when the communication line is used (usually about 20 mA to 200 mA in exchanges), and is such that the desired transmission characteristics can be obtained. A suitable value (for example, about 5Ω) is selected. When an induced lightning surge occurs in this state, current flows through the positive resistance coefficient thermistor 34 and it generates heat, but this alone does not raise the temperature at a sufficient rate. on the other hand
The same current flows through MOV33, but MOV3
Since the power consumed by the positive resistance coefficient thermistor 34 is much larger than that of the positive resistance coefficient thermistor 34 in a low resistance state, the temperature rapidly rises. Here, this temperature rise also causes the temperature of the positive resistance coefficient thermistor 34 to be thermally coupled to rise, causing a rapid increase in resistance beyond the Curie point as shown in FIG. Under the conditions explained in the conventional technology, the resistance required to obtain sufficient protection performance is about 22Ω, and the resistance is low resistance state 5.
While only about 5 times Ω is sufficient, the 7th
As shown in the figure, the temperature required to cause a 100 times resistance change in the positive resistance coefficient thermistor 34 is a temperature increase of about 20° C. relative to the Curie temperature. Therefore, by setting the operating point during normal use near the Curie point, it is possible to generate a resistance change at high speed. On the other hand, since the positive resistance coefficient thermistor 34 in a high resistance state applies sufficient voltage to both ends of the self-recovering discharge tube 32 to start the discharge, it is possible to start the discharge before self-destruction due to heat generation of the MOV 33 and the positive resistance coefficient thermistor 34 themselves. can. In addition to the voltage co-design, the ceramic circuit board 31 is used to create a positive resistance coefficient thermistor 34 as described above.
The MOV33's good thermal design allows it to achieve characteristics such as low resistance during normal use and high resistance when a surge occurs, making it possible to achieve both protection performance and transmission characteristics. As explained above, according to the present invention, a voltage limiting element having negative resistance, a nonlinear resistance element, and a positive resistance coefficient thermistor are used, and thermal coupling between the nonlinear resistance element and the positive resistance coefficient thermistor is achieved. By configuring the protector to be able to do so, it is possible to realize a high-performance protector that is small, inexpensive, has sufficient protection performance, and does not cause deterioration of device performance such as transmission characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図はいずれも従来技術の保安
器の回路図、第3図は典形的金属酸化物バリスタ
の特性図、第4図は一般的に知られている誘導雷
による電気サージ波のグラフを示す。第5図は本
発明に使用する電圧制限素子の特性図、第6図は
同じく負性抵抗を有する非線形抵抗素子の特性
図、第7図は同じく正抵抗係数サーミスタの特性
図である。第8図は本発明の一実施例の通信機用
保安器の斜視図、第9図はその回路図である。 なお図面に使用した符号はそれぞれ以下のもの
を示す。31……セラミツク回路基板、32……
自復性電圧制限素子、33……MOVなどの負抵
抗係数非線形抵抗素子、34……正抵抗係数サー
ミスタ、35……接続用端子。
Figures 1 and 2 are circuit diagrams of conventional protectors, Figure 3 is a characteristic diagram of a typical metal oxide varistor, and Figure 4 is a generally known electrical surge caused by induced lightning. Showing a wave graph. FIG. 5 is a characteristic diagram of a voltage limiting element used in the present invention, FIG. 6 is a characteristic diagram of a nonlinear resistance element having negative resistance, and FIG. 7 is a characteristic diagram of a positive resistance coefficient thermistor. FIG. 8 is a perspective view of a safety device for a communication device according to an embodiment of the present invention, and FIG. 9 is a circuit diagram thereof. The symbols used in the drawings indicate the following. 31... Ceramic circuit board, 32...
Self-resilient voltage limiting element, 33... Negative resistance coefficient nonlinear resistance element such as MOV, 34... Positive resistance coefficient thermistor, 35... Connection terminal.

Claims (1)

【特許請求の範囲】[Claims] 1 電子交換機などの通信装置に使用される通信
用保安器において、線路側入力端子と接地間に負
性抵抗を有する電圧制限素子が接続され、前記線
路側入力端子と被保護機器側出力端子間に正抵抗
係数サーミスタが接続され、前記被保護機器側出
力端子と接地間に負性抵抗を有する非線形抵抗素
子とが接続され、かつ前記正抵抗係数サーミスタ
と前記非線形抵抗素子とが熱的に結合されている
ことを特徴とする通信用保安器。
1. In a communication protector used in a communication device such as an electronic exchange, a voltage limiting element having a negative resistance is connected between a line side input terminal and ground, and a voltage limiting element having a negative resistance is connected between the line side input terminal and the protected equipment side output terminal. A positive resistance coefficient thermistor is connected to the output terminal of the protected device and a nonlinear resistance element having negative resistance is connected between the output terminal on the protected device side and ground, and the positive resistance coefficient thermistor and the nonlinear resistance element are thermally coupled. A communication safety device characterized by:
JP15974980A 1980-11-13 1980-11-13 Communication safety device Granted JPS5783122A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15974980A JPS5783122A (en) 1980-11-13 1980-11-13 Communication safety device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15974980A JPS5783122A (en) 1980-11-13 1980-11-13 Communication safety device

Publications (2)

Publication Number Publication Date
JPS5783122A JPS5783122A (en) 1982-05-24
JPS6320091B2 true JPS6320091B2 (en) 1988-04-26

Family

ID=15700419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15974980A Granted JPS5783122A (en) 1980-11-13 1980-11-13 Communication safety device

Country Status (1)

Country Link
JP (1) JPS5783122A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8202666A (en) * 1982-07-02 1984-02-01 Philips Nv NET VOLTAGE DISCRIMINATION DEVICE.

Also Published As

Publication number Publication date
JPS5783122A (en) 1982-05-24

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