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JPS6321128B2 - - Google Patents
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JPS6321128B2 - - Google Patents

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Publication number
JPS6321128B2
JPS6321128B2 JP54038802A JP3880279A JPS6321128B2 JP S6321128 B2 JPS6321128 B2 JP S6321128B2 JP 54038802 A JP54038802 A JP 54038802A JP 3880279 A JP3880279 A JP 3880279A JP S6321128 B2 JPS6321128 B2 JP S6321128B2
Authority
JP
Japan
Prior art keywords
grating
concave
lattice
substrate
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54038802A
Other languages
Japanese (ja)
Other versions
JPS55131730A (en
Inventor
Katsunobu Aoyanagi
Susumu Nanba
Kazuo Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimazu Seisakusho KK
RIKEN
Original Assignee
Shimazu Seisakusho KK
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimazu Seisakusho KK, RIKEN filed Critical Shimazu Seisakusho KK
Priority to JP3880279A priority Critical patent/JPS55131730A/en
Publication of JPS55131730A publication Critical patent/JPS55131730A/en
Publication of JPS6321128B2 publication Critical patent/JPS6321128B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • G02B5/1857Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Spectrometry And Color Measurement (AREA)

Description

【発明の詳細な説明】 本発明は各種分光器に使用される凹面回折格子
において、全面にわたつて各格子溝が単一のブレ
ーズ角を有するように形成された凹面エシエレツ
ト格子及びその製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a concave Echieret grating used in various spectrometers, in which each grating groove has a single blaze angle over the entire surface, and a method for manufacturing the same. .

従来から機械的な方法で格子溝を形成した凹面
エシエレツト格子が用いられている。しかしこの
回折格子には次のような欠点がある。第1は一般
の凹面回折格子にも通じることであるが、格子溝
が直線的であるため光学的な種々の収差をなくす
ことが困難である。第2には各格子溝のブレーズ
角を単一にすることができない、ブレーズ角を単
一にするにはカツターの向きを格子溝と直角方向
への送りに従つて連続的に変えて行かなければな
らないが、そのようにすることは実際上きわめて
困難である。そのため現在は格子面を幾つかに区
分し一区分の間はカツターの向きを一定にしてお
き、区分を移る毎に段階的にカツターの向きを変
えると云う便宜的な方法を用いている。このため
ブレーズ角は単一でなく或る範囲に分布したもの
となる。例えば格子面を3つに区分したトライパ
ータイト形の凹面エシエレツト格子の波長効率特
性は第1図に点線で示すように3つの波長で極大
を示すが全体的に効率が低い。同図の実線は本発
明に係る凹面エシエレツト格子の効率特性で一波
長λBにピークを有し、全体的に従来のものより
高効率である。
Conventionally, a concave echelletz grating in which grating grooves are formed by a mechanical method has been used. However, this diffraction grating has the following drawbacks. The first problem is that it is similar to general concave diffraction gratings, but since the grating grooves are linear, it is difficult to eliminate various optical aberrations. Second, it is not possible to make the blaze angle of each lattice groove the same.To make the blaze angle uniform, the direction of the cutter must be continuously changed as the cutter is fed in a direction perpendicular to the lattice groove. However, in practice it is extremely difficult to do so. Therefore, at present, a convenient method is used in which the lattice plane is divided into several parts, the orientation of the cutter is kept constant during one division, and the orientation of the cutter is changed stepwise each time the division is changed. Therefore, the blaze angle is not single but is distributed over a certain range. For example, the wavelength efficiency characteristic of a tripartite-type concave Echieret grating in which the lattice plane is divided into three parts shows a maximum at three wavelengths as shown by dotted lines in FIG. 1, but the efficiency is low overall. The solid line in the figure shows the efficiency characteristic of the concave Ethieret grating according to the present invention, which has a peak at one wavelength λB, and has an overall higher efficiency than the conventional grating.

上述した従来格子の第1の欠点は格子基板にホ
ログラフイツクな方法で干渉縞を焼付け、これを
エツチング加工して格子溝を形成する方法で解決
される。しかしこの方法で得られる格子溝は断面
が左右対称な普通の凹面格子であつて、エシエレ
ツト型の凹面格子は得られない。このため従来は
単一なブレーズ角を有し種々な収差が除去された
凹面エシエレツト格子はなかつた。
The first drawback of the conventional grating mentioned above can be solved by printing interference fringes on the grating substrate by a holographic method and etching them to form grating grooves. However, the grating grooves obtained by this method are ordinary concave gratings with a bilaterally symmetric cross section, and an Eschieret type concave grating cannot be obtained. For this reason, conventionally there has been no concave Echieret grating that has a single blaze angle and eliminates various aberrations.

そこで本発明は単一なブレーズ角を有するエシ
エレツト格子を提供することを目的とし、その一
つの製造方法を併せて提案するものである。以下
図面によつて本発明を詳述する。
Therefore, an object of the present invention is to provide an Ethieret grating having a single blaze angle, and also proposes a manufacturing method thereof. The present invention will be explained in detail below with reference to the drawings.

まず既に出て来ているが、この明細書で用いる
幾つかの語の意味を第2図によつて説明する。第
2図はエシエレツト格子の一つの溝を示し、Gを
格子面、各溝のB面を溝面、Nを格子面の法線、
nを溝面の法線としてNnのなす角αをブレーズ
角、格子面法線Nに対し入射光のなす角iを入射
角、射出光と法線Nとのなす角δを回折角とす
る。ブレーズ反射においてはi−α=δ+αとな
り、波長λの光に対するブレーズ条件はmλ=d
(sini−sinδ)、mは回折次数、dは格子定数(第
2図)で与えられる。
First, the meanings of some words used in this specification, which have already been introduced, will be explained with reference to FIG. Figure 2 shows one groove of the Esieret lattice, where G is the lattice plane, B plane of each groove is the groove plane, N is the normal to the lattice plane,
Let n be the normal to the groove surface, the angle α formed by Nn is the blaze angle, the angle i formed by the incident light with respect to the normal N to the lattice surface is the incident angle, and the angle δ between the emitted light and the normal N is the diffraction angle. . In blazed reflection, i-α=δ+α, and the blaze condition for light with wavelength λ is mλ=d
(sini-sin δ), m is the diffraction order, and d is the lattice constant (Fig. 2).

第3図は凹面エシエレツト格子1における曲率
中心C、ローランド円Rc、入射スリツトSi、射
出スリツトSo等の位置関係、ブレーズ角、入射
角、回折角度等の関係を説明する図である。格子
1は中心Poを通り図の紙面に垂直な軸の周りに
回転可能である。Poはローランド円Rc上にあり、
格子1をPo点においてローランド円に沿わせた
位置でローランド円Rc上に入射スリツトSi、射
出スリツトSoを∠SiPoSo=φが70゜近辺になるよ
うな位置に固定した場合、SiとSoとは近似的に
光学的結合条件を満足する(Se−ya−Namioka
マウント)ので、このマウントを用いた場合につ
いて説明する。今射出スリツトSoに波長λの光
をブレーズ反射によつて取出すため格子1をPo
を軸に角度αoだけ回転させ、格子1の曲率中心
をローランド円上のC点からC′点に移した場合を
考える。この場合格子1のP1,Po,P2の各
点における格子面の法線はC′点で交る。この場合
Po点における入射角ではαo+φ/2、回折角δは
(φ/2)−αoであり、i、δに対してmλ=d(sini
−sinδ)が成立つ。またこのときPo点における
溝面は直線PoCに対し垂直(もとのローランド円
Rcに沿う)であらねばならぬから、この点にお
けるブレーズ角はαoである。格子1の両端P1,
P2点においては入射角はPo点におけるiより
わづか小さくなるため回折光は射出スリツトSo
の位置よりわづか外れるがその外れはきわめて小
さい。従つてこのように格子1を傾けた場合も入
射スリツトSiより入射した光は回折されて射出ス
リツトSoの位置に収束すると見てよい。この場
合P1,P2点におけるブレーズ角α1,α2は
その各点における入射角がiより外れているため
Po点におけるブレーズ角αoとわづか異なつてい
る。第3図で格子1の曲率半径R=150、格子幅
W=26(何れも相対値)、2ε=10゜、格子定数d=
8330Å(1200本/mm)、φ=70゜、i=50゜、波長
λ=3530Åとしてαo=15゜、α1=15.15゜、α2=
14.82゜となり全体としてブレーズ角α=15゜±0.2゜
となる。±0.2゜は製作上の誤差に埋没するから実
際上ブレーズ角αは格子全面にわたつて単一であ
ることを要する。第4図はこのような凹面エシエ
レツト格子の断面を溝の形を拡大誇張して画いた
もので、Cは格子面の曲率中心であり、各格子溝
の溝面の中央に立てた溝面法線はCを中心とする
小円γに接し、その半径γはγ≒Rαである。
FIG. 3 is a diagram illustrating the positional relationship among the center of curvature C, Rowland circle Rc, entrance slit Si, exit slit So, etc., and the relationship among the blaze angle, incidence angle, diffraction angle, etc. in the concave Ethieret grating 1. The grid 1 is rotatable around an axis passing through the center Po and perpendicular to the plane of the drawing. Po is on Roland circle Rc,
If the grating 1 is placed along the Rowland circle at point Po, and the input slit Si and the exit slit So are fixed on the Rowland circle Rc at a position such that ∠SiPoSo=φ is around 70°, what are Si and So? Approximately satisfies the optical coupling condition (Se−ya−Namioka
mount), so we will explain the case using this mount. Now, in order to extract the light of wavelength λ to the injection slit So by blaze reflection, the grating 1 is set Po.
Consider the case where the center of curvature of the lattice 1 is moved from point C to point C' on the Rowland circle by rotating it by an angle αo around the axis. In this case, the normal lines of the lattice plane at each point P1, Po, and P2 of the lattice 1 intersect at the point C'. in this case
The incident angle at point Po is αo + φ/2, the diffraction angle δ is (φ/2) − αo, and mλ = d(sini
−sin δ) holds true. Also, at this time, the groove surface at point Po is perpendicular to the straight line PoC (the original Roland circle
(along Rc), so the blaze angle at this point is αo. Both ends P1 of the grid 1,
At point P2, the incident angle is slightly smaller than i at point Po, so the diffracted light passes through the exit slit So
Although it deviates slightly from the position of , the deviation is extremely small. Therefore, even when the grating 1 is tilted in this way, it can be considered that the light incident from the entrance slit Si is diffracted and converged at the position of the exit slit So. In this case, the blaze angles α1 and α2 at points P1 and P2 are because the angle of incidence at each point is different from i.
The blaze angle αo at point Po is slightly different. In Figure 3, the radius of curvature of the grating 1 is R = 150, the grating width W = 26 (all relative values), 2ε = 10°, and the lattice constant d =
8330 Å (1200 lines/mm), φ = 70°, i = 50°, wavelength λ = 3530 Å, αo = 15°, α1 = 15.15°, α2 =
The blaze angle is 14.82°, and the overall blaze angle α is 15°±0.2°. Since ±0.2° is buried in manufacturing errors, it is actually necessary that the blaze angle α be uniform over the entire surface of the grating. Figure 4 shows a cross-section of such a concave Ethelette lattice with the shape of the grooves enlarged and exaggerated. The line touches a small circle γ centered at C, and its radius γ is γ≈Rα.

次に第4図に示すような凹面格子の製造法につ
いて述べる。まず5図aに示すように凹面格子基
板2にイオンエツチング特性の優れた材料例えば
ポリメチルメタクリレートの被膜3を形成し、そ
の上にフオトレジスト4を塗布する。基板2は球
面、円筒面、トーリツク面、その他の非球面凹面
に研磨されたガラス板である。このように用意さ
れた基板にホログラフイツクな方法で回折格子の
原形の干渉縞を焼付ける。ホログラフイツクな方
法と云うのは基板2に対し第2図の入射及び射出
各スリツト位置に互にコヒーレントな点光源を置
いて基板面に干渉縞を現わすもので、両点光源は
一つのレーザービームを2つに分け、夫々のビー
ムをレンズで点光源位置に収束させるように光学
系を構成すればよい。このようにして生じた干渉
縞をそのまヽ回折格子とすれば一方の光源から出
た光は回折されて他方の光源位置に集ることにな
るから、無収差である。上のようにして干渉縞を
焼付けた基板2を現像処理すれば第5図bに示す
ように格子状に被膜3が残るこの被膜3が次のイ
オン又は電子によるエツチング工程でマスクの作
用をする。イオン又は電子エツチングはイオン等
の入射方向に垂直及び平行に近い方向でエツチン
グ速度が最も低く、入射粒子線と或る角度をなす
面のエツチング速度が最大である。従つて第6図
に示すように基板面に対し適当角度βで粒子線I
を照射すると、基板面に垂直な方向には比較的速
く格子溝面に垂直な方向のエツチングがおそいた
め図でイ,ロ,ハと示すようにエツチングが進行
して左右非対称な形の溝が形成される。第6図で
αはブレーズ角であるから、基板法線Nに対しβ
だけ傾いた方向から粒子線を照射すればよい。こ
こにβは格子の溝面Bと格子面法線Nとのなす角
に近い角であるが、イオンビーム等の方向をB面
と平行にすると、B面そのもののエツチングが進
行しないので、イオンビームがB面に対し適当に
斜入射となるようにβを決める必要があり、粒子
線の種類、速度、粒子密度(ビーム強度)、基板
材質、エツチング装置等によつて異るから、予め
実験によつて求めておく。
Next, a method for manufacturing a concave grating as shown in FIG. 4 will be described. First, as shown in FIG. 5a, a coating 3 of a material having excellent ion etching properties, such as polymethyl methacrylate, is formed on a concave grating substrate 2, and a photoresist 4 is applied thereon. The substrate 2 is a glass plate polished to have a spherical, cylindrical, toric or other aspherical concave surface. The interference fringes of the original shape of the diffraction grating are printed onto the substrate thus prepared using a holographic method. The holographic method is a method in which mutually coherent point light sources are placed at the entrance and exit slit positions of the substrate 2 as shown in Figure 2, and interference fringes appear on the substrate surface. The optical system may be configured to divide the beam into two and converge each beam onto a point light source position using a lens. If the interference fringes thus generated are used as a diffraction grating, the light emitted from one light source will be diffracted and concentrated at the position of the other light source, so there will be no aberration. When the substrate 2 on which the interference fringes have been printed in the above manner is developed, a film 3 remains in a lattice pattern as shown in FIG. . In ion or electron etching, the etching rate is lowest in directions perpendicular and nearly parallel to the direction of incidence of ions, etc., and the etching rate is highest in a plane forming a certain angle with the incident particle beam. Therefore, as shown in FIG. 6, the particle beam I
When exposed to irradiation, etching is relatively fast in the direction perpendicular to the substrate surface, and etching is slow in the direction perpendicular to the grating groove surface, so etching progresses as shown in A, B, and C in the figure, resulting in asymmetrically shaped grooves. It is formed. In Figure 6, α is the blaze angle, so β with respect to the substrate normal N.
It is sufficient to irradiate the particle beam from an inclined direction. Here, β is an angle close to the angle formed by the groove surface B of the grating and the normal N to the grating surface, but if the direction of the ion beam, etc. is made parallel to the B surface, etching of the B surface itself will not proceed, so the ion It is necessary to determine β so that the beam is appropriately obliquely incident on the B plane, and since it varies depending on the type of particle beam, speed, particle density (beam intensity), substrate material, etching equipment, etc., it is necessary to determine it by experiment in advance. Find it by.

第7図は凹面格子において格子面の各点でβが
一定になるようにする方法を示している。同図で
2は第5図について説明した方法により得られた
マスクされた基板で、その曲率中心Cを中心に矢
印方向に回動できるよう腕5上にセツトされてい
る。6は曲率中心Cの横で基板2の一つの法線
PoCより角距離でβだけ離れた所に固定されたス
リツトであり、その長さ方向は基板2上の被膜3
の格子と平行である。7はイオン源でスリツト6
を通して基板2を照射するがスリツト6のため薄
い板状線束となり基板2上のPoの位置を含みそ
の極く近辺のみを照射する。この構成で基板2を
Cを中心に繰返し往復回動させて基板上の各点が
Po点を通るようにすればよい。
FIG. 7 shows a method for making β constant at each point on the lattice plane in a concave lattice. In the figure, reference numeral 2 denotes a masked substrate obtained by the method explained in connection with FIG. 5, which is set on the arm 5 so as to be rotatable in the direction of the arrow about its center of curvature C. 6 is one normal line of the substrate 2 beside the center of curvature C
It is a slit fixed at an angular distance of β from the PoC, and its length direction is 3
is parallel to the lattice of 7 is the ion source and slit 6
Although the substrate 2 is irradiated through the slit 6, it becomes a thin plate-like beam bundle and irradiates only the area including the position of Po on the substrate 2 and the vicinity thereof. With this configuration, each point on the board is adjusted by repeatedly rotating the board 2 back and forth around C.
All you have to do is pass through point Po.

本発明凹面エシエレツト格子はブレーズ角が全
面にわたつて単一であるから、第1図に示すよう
に従来のトライパータイト型凹面エシエレツト格
子に比し全体的に高効率であり、かつブレーズ波
長λBにおける効率の改善が著しい。また本発明
方法によれば格子線が曲つていてもブレーズ角を
一定に加工できる性質を有するから、格子マスク
が直線的であつても、ホログラフイツクな方法で
作られた曲つた格子であつても容易正確に一定ブ
レーズ角が得られる。
Since the concave Ethierette grating of the present invention has a single blaze angle over the entire surface, it has higher overall efficiency than the conventional tripartite concave Ethieret grating, as shown in Fig. 1, and the blaze wavelength λB. Significant improvement in efficiency. Furthermore, the method of the present invention has the property of making it possible to maintain a constant blaze angle even if the grating lines are curved, so even if the grating mask is straight, it can be processed even if the grating mask is a curved grating made by a holographic method. A constant blaze angle can be easily and accurately obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る凹面エシエレツト格子と
従来の凹面エシエレツト格子との効率比較を示す
グラフ、第2図は本明細書における用語の説明を
する図、第3図は凹面エシエレツト格子の入射
角、回折角、ブレーズ角等の関係を示す図、第4
図は本発明に係る凹面エシエレツト格子の側面
図、第5図は本発明方法における初期工程の説明
図、第6図は粒子線によるエツチングの進行状態
を示す拡大側面図、第7図は基板に粒子線エツチ
ングを施す装置の平面図である。 1……凹面エシエレツト格子、2……格子基
板、3……被膜。
FIG. 1 is a graph showing a comparison of the efficiency of the concave Ethierette grating according to the present invention and a conventional concave Ethierette grating, FIG. 2 is a diagram explaining the terms used in this specification, and FIG. , a diagram showing the relationship between diffraction angle, blaze angle, etc., 4th
The figure is a side view of a concave echeleton grating according to the present invention, FIG. 5 is an explanatory diagram of the initial step in the method of the present invention, FIG. FIG. 2 is a plan view of an apparatus for performing particle beam etching. DESCRIPTION OF SYMBOLS 1... Concave Ethielates lattice, 2... Grating substrate, 3... Coating.

Claims (1)

【特許請求の範囲】 1 格子面の法線に対し、各溝面が同じブレーズ
角を有する格子溝より成つていることを特徴とす
る凹面エシエレツト格子。 2 凹面基板上に設けた薄膜に格子溝を形成して
この格子状の薄膜を上記凹面基板に対するマスク
とし、同凹面基板をその曲率中心の周りに曲率円
周に沿つて上記薄膜の格子線と直交する方向に移
動させながら、この曲率中心位置より上記凹面基
板の法線方向とは異なる方向に離れた点を通る線
に沿い、上記凹面基板上の薄膜格子の格子線と平
行な平板状のイオン又は電子の線束を上記凹面基
板に照射して同基板面をエツチングすることを特
徴とする凹面エシエレツト格子の製造方法。
[Scope of Claims] 1. A concave Echieret grating characterized in that each groove surface is made up of grating grooves having the same blaze angle with respect to the normal to the grating surface. 2 Form a lattice groove in a thin film provided on a concave substrate, use this lattice-shaped thin film as a mask for the concave substrate, and align the concave substrate with the lattice lines of the thin film around the center of curvature along the circumference of the curvature. While moving in the orthogonal direction, a flat plate parallel to the lattice lines of the thin film lattice on the concave substrate is formed along a line passing through a point away from the center of curvature in a direction different from the normal direction of the concave substrate. A method for manufacturing a concave echestiol grating, characterized in that the surface of the concave substrate is etched by irradiating the concave substrate with a flux of ions or electrons.
JP3880279A 1979-03-31 1979-03-31 Concaved echelette grating and its process Granted JPS55131730A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3880279A JPS55131730A (en) 1979-03-31 1979-03-31 Concaved echelette grating and its process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3880279A JPS55131730A (en) 1979-03-31 1979-03-31 Concaved echelette grating and its process

Publications (2)

Publication Number Publication Date
JPS55131730A JPS55131730A (en) 1980-10-13
JPS6321128B2 true JPS6321128B2 (en) 1988-05-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP3880279A Granted JPS55131730A (en) 1979-03-31 1979-03-31 Concaved echelette grating and its process

Country Status (1)

Country Link
JP (1) JPS55131730A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955221A (en) * 1997-11-21 1999-09-21 The Regents Of The University Of California Method and apparatus for fabrication of high gradient insulators with parallel surface conductors spaced less than one millimeter apart
JP2003075622A (en) * 2001-09-05 2003-03-12 Toshiba Corp Diffraction grating, processing method of diffraction grating, and optical element
JP5082421B2 (en) * 2006-12-13 2012-11-28 株式会社島津製作所 Diffraction grating
JP5056997B2 (en) * 2012-04-27 2012-10-24 株式会社島津製作所 Manufacturing method of diffraction grating

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038338A (en) * 1973-08-08 1975-04-09
JPS5540846A (en) * 1978-09-14 1980-03-22 Daishowa Eng Kk Dry crepe apparatus for making thin paper by assemblage of steel plate dryer and casted iron dryer

Also Published As

Publication number Publication date
JPS55131730A (en) 1980-10-13

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