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JPS6323153B2 - - Google Patents
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JPS6323153B2 - - Google Patents

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Publication number
JPS6323153B2
JPS6323153B2 JP55155211A JP15521180A JPS6323153B2 JP S6323153 B2 JPS6323153 B2 JP S6323153B2 JP 55155211 A JP55155211 A JP 55155211A JP 15521180 A JP15521180 A JP 15521180A JP S6323153 B2 JPS6323153 B2 JP S6323153B2
Authority
JP
Japan
Prior art keywords
silicon nitride
sintered body
spinel
weight
nitride sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55155211A
Other languages
Japanese (ja)
Other versions
JPS5782178A (en
Inventor
Masakatsu Fujisaki
Takuo Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP55155211A priority Critical patent/JPS5782178A/en
Publication of JPS5782178A publication Critical patent/JPS5782178A/en
Publication of JPS6323153B2 publication Critical patent/JPS6323153B2/ja
Granted legal-status Critical Current

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  • Ceramic Products (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は窒化珪素質焼結体に関する。更には、
常圧焼成により得られる高温で高強度を有する窒
化珪素質焼結体に関する。 窒化珪素質焼結体は最近進歩のめざましいセラ
ミツクスの1種であり、ガスタービン用部材、冶
工具、内燃機関用部材等苛酷な条件で使用される
個所に適用が検討されつつある。これらの用途は
一般に複雑な形状が要求される、高温での高強度
が要求される、品質特に強度の安定性が要求され
る等の点から、これらを全て満足するものは未だ
得られていない。まづ、複雑な形状が要求される
ということからホツトプレスによる製法にはその
適用に限度があり、常圧焼成法を採用せざるを得
ない。しかしながら、常圧焼成法によつては従来
の種々の添加剤では充分な高強度が得られず、ま
た、強度のバラツキも大きく品質の安定性という
面では充分なものが望めなかつた。 本発明者等は上記の欠点を取り除くことについ
て種々検討した結果本発明を見出したもので、本
発明は一般式AB2O4(ただしAはMg、Ca、Ba、
Sr、Feから選ばれる二価金属の少くとも1種以
上、BはAl、Cr、Feから選ばれる三価金属の少
くとも1種以上を示す)で表わされるスピネル
0.5〜5重量%、炭化チタン0.5〜5重量%、残部
窒化珪素からなる窒化珪素質焼結体を要旨とする
ものである。 本発明の構成により何故に上記目的が達成され
るか未だ充分に解明されていないが、本発明の構
成によれば高温で高強度を有する焼結体が得られ
る。 本発明で用いられるスピネルは一般式AB2O4
(AはMg、Ca、Ba、Sr、Feから選ばれる二価金
属の少くとも1種以上、BはAl、Cr、Feから選
ばれる三価金属の少くとも1種以上)で表わされ
るスピネル構造を有する無機酸化物であつて、内
でも高融点、高温安定性、窒化珪素との反応性等
の点からMgAl2O4が最も好ましい。 これらのスピネルは、組成的に窒化珪素焼結体
中に存在していることが必要であるが、予め製造
時にスピネルとして添加されることは必ずしも必
要なく、AO及びB2O3として添加されてもよいこ
とは勿論である。 以下、スピネルとして最も好ましいMgAl2O4
を例にとつて説明する。 MgAl2O4は焼結助剤として添加されるわけで
あるがこの添加量は焼結助剤として効果を発揮す
る限りにおいて少い方がよい。即ち、余りに添加
量が多すぎると窒化珪素質焼結体の耐熱性が不充
分になり、高温での強度低下が著るしくなつた
り、窒化珪素質焼結体の熱膨脹係数が大きくなつ
たりして好ましくない。勿論、余り少なすぎても
焼結助剤としての効果が充分に現れないため添加
量の下限も存在し、本発明者等の検討の結果、
MgAl2O4は0.5〜5重量%、好ましくは1〜2重
量%の範囲で含まれることが必要であることが見
出された。 更に、本発明者等は窒化珪素焼結体の結合部に
炭化チタンを存在せしめることが該焼結体の高温
強度を向上させる上で効果が顕著であることを見
出した。即ち、スピネルのみであつてもそれなり
上記した効果をもつものの、ややもすると、窒化
珪素粒子表面のシリカと反応してガラス相を生成
しやすく、用途によつては今一つ、高温強度の点
で不満足な場合があつたが、ここに炭化チタンを
存在せしめると、高温強度が飛躍的に向上するこ
とが見出されたものである。何故に、炭化チタン
がこのような効果をもつものか今だ充分に解明し
つくしたわけではないが、炭化チタンが結合相に
存在することにより、前述のガラス相ができにく
くなる。あるいは、生成したガラス相が速かに結
晶化することによるものと、本発明者等は推測し
ている。炭化チタンの存在量は0.5〜5重量%、
好ましくは1〜2重量%が必要である。その理由
は0.5重量%、さらには1.0重量%より少いと窒化
珪素質焼結体の高温強度が充分に改善しえないこ
とにより、また5重量%、さらには2重量%より
多すぎると、もはやそれ以上の高温強度改善効果
が見られないばかりでなく、逆に高温強度を低下
させる原因となることなどによる。 また、本発明では、なるべくスピネル量を少く
することが必要であるとすることに関係して、ス
ピネルの粒度もなるべく小さい方がよく、平均粒
径で1μ以下が好ましい。その理由は1μ超では、
スピネル存在量をその上限値に設定しても、スピ
ネルが窒化珪素焼結体中に均一に分布されないこ
とがあり、従つて、窒化珪素焼結体の強度が場所
によつてバラツクことがあるためである。 本発明は特定の製法により得られるものに限定
されるものではないが、本発明の窒化珪素質焼結
体を製造する好ましい方法を1例として以下に述
べる。 平均粒径2μ程度の窒化珪素粉末に、平均粒径
1μ以下好ましは0.5μ以下のスピネル0.5〜5重量
%とこれよりやや細かい炭化チタン粉末0.5〜5
重量%とを常法により混合する。勿論スピネルは
例えば水酸化アルミニウム、塩化アルミニウム、
アルミナ、水酸化マグネシウム、マグネシア等の
粉末を窒化珪素粉末に配合して生成せしめること
も可能である。そして、この混合粉末に有機質バ
インダーを適当量加えて機械プレスにより成形す
る。この成形は、複雑な形状であれば、石膏型に
流し込む泥漿鋳込法を採用することもできる。 かくして得られた成形体は充分に乾燥された後
に、通常は非酸化性雰囲気(アルゴンなどの不活
性雰囲気あるいは、窒素などの中性雰囲気)下で
1600〜1800℃で焼結される。以上の通常焼結法の
他に、形状の単純でかつ高強度が要求される場合
にはホツトプレス法も採用されうる。 実施例 窒化珪素粉末(α相75%、平均粒径1.5μ、純度
99.5%)と第1表に示す各添加剤を第1表に示す
配合割合で配合し、ポツトミルで混合した。この
混合粉末を液圧プレス成形法により、2000Kg/cm2
で成形した後、焼成した。焼結体の特性について
は第1表に併記した。 また添加剤の種類と配合割合を変えた他はほぼ
同様にして得られた焼結体の特性を、添加剤(い
ずれも平均粒径約0.5μ)の種類、配合割合ととも
に第2表に示す。
The present invention relates to a silicon nitride sintered body. Furthermore,
The present invention relates to a silicon nitride sintered body that has high strength at high temperatures and is obtained by normal pressure firing. Silicon nitride sintered bodies are a type of ceramics that have made remarkable progress in recent years, and are being considered for application to parts used under harsh conditions, such as gas turbine parts, jigs, and internal combustion engine parts. These applications generally require complex shapes, high strength at high temperatures, and stability in quality, especially strength, and so far no product has been found that satisfies all of these requirements. . First, since a complex shape is required, there is a limit to the application of the hot press manufacturing method, and an atmospheric pressure firing method must be adopted. However, when using the atmospheric pressure firing method, it is not possible to obtain sufficiently high strength using various conventional additives, and the strength also varies widely, making it difficult to achieve sufficient quality stability. The present inventors have discovered the present invention as a result of various studies to eliminate the above-mentioned drawbacks .
Spinel represented by at least one divalent metal selected from Sr and Fe, and B representing at least one trivalent metal selected from Al, Cr, and Fe.
The gist is a silicon nitride sintered body consisting of 0.5 to 5% by weight of titanium carbide, 0.5 to 5% by weight of titanium carbide, and the balance silicon nitride. Although it has not yet been fully elucidated why the above object is achieved by the structure of the present invention, according to the structure of the present invention, a sintered body having high strength at high temperatures can be obtained. The spinel used in the present invention has the general formula AB 2 O 4
(A is at least one divalent metal selected from Mg, Ca, Ba, Sr, and Fe; B is at least one trivalent metal selected from Al, Cr, and Fe) with a spinel structure. Among these inorganic oxides, MgAl 2 O 4 is most preferred from the viewpoint of high melting point, high temperature stability, reactivity with silicon nitride, etc. These spinels need to be present in the silicon nitride sintered body compositionally, but it is not necessarily necessary that they be added as spinels in advance during manufacturing, and they can be added as AO and B 2 O 3 . Of course, this is a good thing. Below, MgAl 2 O 4 is the most preferred spinel.
This will be explained using an example. MgAl 2 O 4 is added as a sintering aid, but the amount added should be small as long as it is effective as a sintering aid. That is, if the amount added is too large, the heat resistance of the silicon nitride sintered body becomes insufficient, the strength decreases significantly at high temperatures, and the coefficient of thermal expansion of the silicon nitride sintered body increases. I don't like it. Of course, if it is too small, the effect as a sintering aid will not be fully manifested, so there is a lower limit to the amount of addition, and as a result of the inventors' studies,
It has been found that it is necessary to include MgAl2O4 in the range of 0.5 to 5% by weight, preferably 1 to 2% by weight. Furthermore, the present inventors have found that the presence of titanium carbide in the bonded portion of a silicon nitride sintered body has a significant effect in improving the high temperature strength of the sintered body. That is, although spinel alone has the above-mentioned effects, it tends to react with silica on the surface of silicon nitride particles to form a glass phase, and depending on the application, it is unsatisfactory in terms of high-temperature strength. However, it has been discovered that the presence of titanium carbide dramatically improves the high-temperature strength. Although it has not yet been fully elucidated why titanium carbide has such an effect, the presence of titanium carbide in the binder phase makes it difficult to form the glass phase described above. Alternatively, the present inventors speculate that this is due to the rapid crystallization of the generated glass phase. The amount of titanium carbide present is 0.5 to 5% by weight,
Preferably 1-2% by weight is required. The reason for this is that if it is less than 0.5% by weight, or even 1.0% by weight, the high-temperature strength of the silicon nitride sintered body cannot be sufficiently improved, and if it is more than 5% by weight, or even 2% by weight, the This is because not only is no further effect of improving high-temperature strength seen, but on the contrary, it causes a decrease in high-temperature strength. Furthermore, in the present invention, since it is necessary to reduce the amount of spinel as much as possible, the particle size of the spinel is also preferably as small as possible, and the average particle size is preferably 1 μm or less. The reason is that above 1μ,
Even if the amount of spinel present is set to its upper limit, spinel may not be uniformly distributed in the silicon nitride sintered body, and therefore the strength of the silicon nitride sintered body may vary depending on the location. It is. Although the present invention is not limited to those obtained by a specific manufacturing method, a preferred method for manufacturing the silicon nitride sintered body of the present invention will be described below as an example. Silicon nitride powder with an average particle size of about 2μ,
0.5 to 5% by weight of spinel of 1μ or less, preferably 0.5μ or less, and 0.5 to 5% of titanium carbide powder slightly finer than this
% by weight in a conventional manner. Of course, spinel is made of aluminum hydroxide, aluminum chloride,
It is also possible to produce the powder by blending powders of alumina, magnesium hydroxide, magnesia, etc. with silicon nitride powder. Then, an appropriate amount of an organic binder is added to this mixed powder, and the mixture is molded using a mechanical press. For this molding, if the shape is complex, a slurry casting method in which the shape is poured into a plaster mold can be adopted. After the molded body thus obtained is sufficiently dried, it is usually dried under a non-oxidizing atmosphere (an inert atmosphere such as argon or a neutral atmosphere such as nitrogen).
Sintered at 1600-1800℃. In addition to the above-mentioned normal sintering method, a hot pressing method may also be employed when a simple shape and high strength are required. Example Silicon nitride powder (α phase 75%, average particle size 1.5μ, purity
99.5%) and each of the additives shown in Table 1 were blended in the proportions shown in Table 1 and mixed in a pot mill. This mixed powder was molded into 2000Kg/cm 2 by hydraulic press molding method.
After molding, it was fired. The properties of the sintered bodies are also listed in Table 1. Table 2 shows the properties of sintered bodies obtained in almost the same manner except that the types and blending ratios of additives were changed, along with the types and blending ratios of additives (each with an average particle size of approximately 0.5μ). .

【表】【table】

【表】【table】

【表】【table】

Claims (1)

【特許請求の範囲】 1 一般式AB2O4(ただしAはMg、Ca、Ba、
Sr、Feから選ばれる二価金属の少くとも1種以
上、BはAl、Cr、Feから選ばれる三価金属の少
くとも1種以上を示す)で表わされるスピネル
0.5〜5重量%、炭化チタン0.5〜5重量%、残部
窒化珪素からなる窒化珪素質焼結体。 2 前記スピネルが粒径1μ以下である特許請求
の範囲第1項の窒化珪素質焼結体。 3 前記スピネルがMgAl2O4である特許請求の
範囲第1項又は第2項の窒化珪素質焼結体。
[Claims] 1 General formula AB 2 O 4 (where A is Mg, Ca, Ba,
Spinel represented by at least one divalent metal selected from Sr and Fe, and B representing at least one trivalent metal selected from Al, Cr, and Fe.
A silicon nitride sintered body consisting of 0.5 to 5% by weight of titanium carbide, 0.5 to 5% by weight of titanium carbide, and the balance silicon nitride. 2. The silicon nitride sintered body according to claim 1, wherein the spinel has a grain size of 1 μm or less. 3. The silicon nitride sintered body according to claim 1 or 2, wherein the spinel is MgAl 2 O 4 .
JP55155211A 1980-11-06 1980-11-06 Silicon nitride sintered body Granted JPS5782178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55155211A JPS5782178A (en) 1980-11-06 1980-11-06 Silicon nitride sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155211A JPS5782178A (en) 1980-11-06 1980-11-06 Silicon nitride sintered body

Publications (2)

Publication Number Publication Date
JPS5782178A JPS5782178A (en) 1982-05-22
JPS6323153B2 true JPS6323153B2 (en) 1988-05-14

Family

ID=15600929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55155211A Granted JPS5782178A (en) 1980-11-06 1980-11-06 Silicon nitride sintered body

Country Status (1)

Country Link
JP (1) JPS5782178A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0649824A2 (en) 1993-10-25 1995-04-26 Kabushiki Kaisha Toshiba Silicon nitride-based sinters
JP2007308368A (en) * 2007-07-13 2007-11-29 Toshiba Corp Method for producing wear-resistant member made of silicon nitride

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077175A (en) * 1983-10-01 1985-05-01 株式会社クボタ Manufacture of silicon nitride sintered body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0649824A2 (en) 1993-10-25 1995-04-26 Kabushiki Kaisha Toshiba Silicon nitride-based sinters
JP2007308368A (en) * 2007-07-13 2007-11-29 Toshiba Corp Method for producing wear-resistant member made of silicon nitride

Also Published As

Publication number Publication date
JPS5782178A (en) 1982-05-22

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