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JPS6327681B2 - - Google Patents
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JPS6327681B2 - - Google Patents

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Publication number
JPS6327681B2
JPS6327681B2 JP4572576A JP4572576A JPS6327681B2 JP S6327681 B2 JPS6327681 B2 JP S6327681B2 JP 4572576 A JP4572576 A JP 4572576A JP 4572576 A JP4572576 A JP 4572576A JP S6327681 B2 JPS6327681 B2 JP S6327681B2
Authority
JP
Japan
Prior art keywords
litao
substrate
refractive index
optical
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4572576A
Other languages
Japanese (ja)
Other versions
JPS52128157A (en
Inventor
Hideki Tsuya
Yoshio Fujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4572576A priority Critical patent/JPS52128157A/en
Publication of JPS52128157A publication Critical patent/JPS52128157A/en
Publication of JPS6327681B2 publication Critical patent/JPS6327681B2/ja
Granted legal-status Critical Current

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  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 近年、光導波路や光変調等の能動機能を有する
光IC素子の研究、開発が盛んになつている。光
導波路は基板上に高屈折率を有する単結晶薄膜の
層を形成することにより実現でき、これらの作成
法としてスパツタ法、液相エピタキシヤル法
(LPE法)、電界拡散法、逆拡散法等が試みられ
ている。
[Detailed Description of the Invention] In recent years, research and development of optical IC elements having active functions such as optical waveguides and optical modulation have become active. Optical waveguides can be realized by forming a single crystal thin film layer with a high refractive index on a substrate, and methods for creating these include sputtering method, liquid phase epitaxial method (LPE method), electric field diffusion method, back diffusion method, etc. is being attempted.

ニオブ酸リシウム(LiNbO3)はタンタル酸リ
シウム(LiTaO3)よりも屈折率が大きく、かつ
これらの二つは格子定数がほぼ等しいため、
LiTaO3基板上に育成されたLiNbO3薄膜から成
る光導波路の研究が非常によく行なわれている。
しかしながら、周知のようにLiNbO3は光損傷を
極めて受け易く、特に光導波路のように狭い領域
にレーザ光を閉じ込める場合には、レーザ光の密
度が増大し、光損傷が極めて起り易くなる。この
ためLiNbO3を光変調素子のような機能素子とし
て動作させるには、使用するレーザ光の強度が制
限され、実用上障害となる。
Lithium niobate (LiNbO 3 ) has a higher refractive index than lithium tantalate (LiTaO 3 ), and the lattice constants of these two are almost the same, so
Optical waveguides made of LiNbO 3 thin films grown on LiTaO 3 substrates have been extensively studied.
However, as is well known, LiNbO 3 is extremely susceptible to optical damage, and especially when laser light is confined in a narrow area such as in an optical waveguide, the density of the laser light increases and optical damage becomes extremely likely to occur. Therefore, in order to operate LiNbO 3 as a functional element such as an optical modulation element, the intensity of the laser light used is limited, which poses a practical obstacle.

一方、LiTaO3は本発明者らの研究により、光
損傷の閾値がLiNbO3に比べて非常に高くなり、
実用上のレーザ光密度に対してはほとんど問題の
ないことが判明している。そのため、光IC材料
の本命はLiTaO3であると考えられ、最近
LiTaO3を用いる試みがなされはじめてきた。一
例として、LiTaO3に銅等の不純物を熱拡散法に
より拡散させて高屈折率層を形成し、光導波路と
する試みがなされている。しかしながら、この不
純物拡散により作成された光導波路は、本質的
に、(1)屈折率分布になだらかな勾配をもつこと、
(2)レーザ光の吸収が増大すること、(3)光損傷を起
し易いこと、等の欠点があり、光導波路として、
またこれを利用した光変調器の特性として好まし
くないものといえる。
On the other hand, research by the present inventors has shown that LiTaO 3 has a much higher threshold for photodamage than LiNbO 3 .
It has been found that there is almost no problem with the practical laser light density. Therefore, LiTaO 3 is considered to be the favorite optical IC material, and recently
Attempts using LiTaO 3 have begun. As an example, an attempt has been made to form a high refractive index layer by diffusing impurities such as copper into LiTaO 3 using a thermal diffusion method to form an optical waveguide. However, the optical waveguide created by this impurity diffusion essentially has (1) a gentle gradient in the refractive index distribution;
As an optical waveguide, it has disadvantages such as (2) increased absorption of laser light and (3) susceptibility to optical damage.
Moreover, it can be said that this is an unfavorable characteristic of an optical modulator using this.

本発明はこれらの欠点のない、屈折率分布が一
様なLiTaO3から成る新しい光導波路を提供する
ものである。以下、図面を参照しながら一実施例
について詳細に説明する。図は本発明による光導
波路の構造を示す概略図である。結晶性が優れ、
かつ屈折率の均一な薄膜を作成する方法としては
拡散法やスパツタ法等よりはLPE法が優れてい
ることは一般に知られている。LiTaO3薄膜を
LPE法で作成するためには基板として、LiTaO3
よりも屈折率が小さく、かつ格子定数が極めて近
いこと、更に基板の融点が液相成長されるものよ
りもかなり高いことが条件として要請される。し
かしながらこの条件を満たす恰好な基板は現在見
い出されておらず、そのためにLPE法による
LiTaO3薄膜の作成が行なわれていないものと思
われる。
The present invention provides a new optical waveguide made of LiTaO 3 with a uniform refractive index distribution and free from these drawbacks. Hereinafter, one embodiment will be described in detail with reference to the drawings. The figure is a schematic diagram showing the structure of an optical waveguide according to the present invention. Excellent crystallinity,
Furthermore, it is generally known that the LPE method is superior to the diffusion method, sputtering method, etc. as a method for creating a thin film with a uniform refractive index. LiTaO 3 thin film
In order to create by LPE method, LiTaO 3 is used as a substrate.
The conditions are that the refractive index is smaller than that of the substrate, that the lattice constant is very close to that of the substrate, and that the melting point of the substrate is considerably higher than that of the substrate grown in the liquid phase. However, a suitable substrate that satisfies this condition has not yet been found, and therefore the LPE method is used.
It seems that no LiTaO 3 thin film has been created.

本発明は上述した特徴を有する基板を構成要素
の一部とする光導波路を提供することにある。ま
ず基板としては、LiTaO3単結晶1にスパツタ法
で五酸化バナジウム(V2O5)を蒸着し、熱処理
によりV2O5をLiTaO3中に拡散させ3〜6μmの
V2O5とLiTaO3から成る組成物の層2を形成させ
たものを用いた。この層2はLiTaO3単位に比べ
て屈折率が常光線および異常光線に対して1×
10-3倍程度小さくなることが判つた。またこの層
の厚さは熱処理温度および時間で制限できた。こ
のようにして新しく形成された組成物の層2を基
板として、LiTaO3薄膜3をLPE法により成長さ
せた。このときLiTaO3の液相の融点を基板より
低くするために適当なフラツクスを用いた。この
LPE法により作成されたLiTaO3薄膜は基板より
屈折率が高く、プリズム4を用いてレーザ光5を
導入させるとLiTaO3薄膜3の中を導波すること
が確められた。また光損傷に強いことも判明し
た。またLiTaO3薄膜に適当な電極を設けて光変
調器の機能をもたせることも可能である。
An object of the present invention is to provide an optical waveguide that includes a substrate having the above-mentioned characteristics as a part of its constituent elements. First, as a substrate, vanadium pentoxide (V 2 O 5 ) is deposited on LiTaO 3 single crystal 1 by sputtering method, and V 2 O 5 is diffused into LiTaO 3 by heat treatment to form a 3-6 μm thick layer.
A layer 2 formed of a composition consisting of V 2 O 5 and LiTaO 3 was used. This layer 2 has a refractive index of 1× for ordinary and extraordinary rays compared to LiTaO 3 units.
It was found that it becomes about 10 -3 times smaller. Moreover, the thickness of this layer could be limited by the heat treatment temperature and time. Using the thus newly formed composition layer 2 as a substrate, a LiTaO 3 thin film 3 was grown by the LPE method. At this time, an appropriate flux was used to make the melting point of the liquid phase of LiTaO 3 lower than that of the substrate. this
It was confirmed that the LiTaO 3 thin film created by the LPE method has a higher refractive index than the substrate, and that when the laser beam 5 is introduced using the prism 4, it is guided through the LiTaO 3 thin film 3. It was also found to be resistant to photodamage. It is also possible to provide the LiTaO 3 thin film with an appropriate electrode function to function as an optical modulator.

以上詳述したように、本発明により新しく提供
したLiTaO3 1−LiTaO3とV2O5からなる組成物
2−LiTaO3薄膜3から成る光導波路は極めて光
損傷に強い性質を有している。本発明は光導波路
の新しい構造を提供することが主目的であつて、
製造方法には必ずしも関与しないが、本構造の特
徴を生かし、良好な光導波路を作成するために
は、LPE法が最適であり、拡散法やスパツタ法
は不適当であるといえる。
As detailed above, the optical waveguide newly provided by the present invention consisting of LiTaO 3 1 - composition 2 made of LiTaO 3 and V 2 O 5 - LiTaO 3 thin film 3 has properties that are extremely resistant to optical damage. . The main purpose of the present invention is to provide a new structure of an optical waveguide,
Although not necessarily involved in the manufacturing method, in order to take advantage of the features of this structure and create a good optical waveguide, the LPE method is optimal, and the diffusion method and sputtering method are inappropriate.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明により得られた光導波路の構造を説
明するための概略図で、1はLiTaO3単結晶、2
はV2O5とLiTaO3から成る組成物、3はLiTaO3
薄膜、4はレーザ光を導入するためのプリズム、
5は入射するレーザ光である。
The figure is a schematic diagram for explaining the structure of the optical waveguide obtained by the present invention, in which 1 is a LiTaO 3 single crystal, 2 is a
is a composition consisting of V 2 O 5 and LiTaO 3 , 3 is LiTaO 3
thin film, 4 is a prism for introducing laser light,
5 is an incident laser beam.

Claims (1)

【特許請求の範囲】[Claims] 1 タンタル酸リシウム単結晶基板と前記基板表
面から五酸化バナジウムを拡散させ形成させた五
酸化バナジウムとタンタル酸リシウムより構成さ
れる厚さ3〜6μmの低屈折率の拡散層と、前記
拡散層上にエピタキシヤル成長させたタンタル酸
リシウム単結晶層とより構成される三層構造を有
することを特徴とする光導波路。
1. A lithium tantalate single crystal substrate, a 3-6 μm thick low refractive index diffusion layer made of vanadium pentoxide and lithium tantalate formed by diffusing vanadium pentoxide from the surface of the substrate, and a low refractive index diffusion layer on the diffusion layer. 1. An optical waveguide characterized by having a three-layer structure comprising a lithium tantalate single crystal layer epitaxially grown.
JP4572576A 1976-04-20 1976-04-20 Photoconductive wave path Granted JPS52128157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4572576A JPS52128157A (en) 1976-04-20 1976-04-20 Photoconductive wave path

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4572576A JPS52128157A (en) 1976-04-20 1976-04-20 Photoconductive wave path

Publications (2)

Publication Number Publication Date
JPS52128157A JPS52128157A (en) 1977-10-27
JPS6327681B2 true JPS6327681B2 (en) 1988-06-03

Family

ID=12727292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4572576A Granted JPS52128157A (en) 1976-04-20 1976-04-20 Photoconductive wave path

Country Status (1)

Country Link
JP (1) JPS52128157A (en)

Also Published As

Publication number Publication date
JPS52128157A (en) 1977-10-27

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