JPS6329416B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to solid-state color imaging devices, and more particularly to solid-state color imaging devices that utilize multiple photosensitive layers stacked on a solid-state substrate to eliminate the need for multicolor filters.

A well-recognized goal in the field of solid-state color imaging devices is to create solid-state color imaging devices that are extremely light sensitive and produce sharp images while having low manufacturing costs. Many different types of solid state color imaging devices have been created with this goal in mind.

In one example of such an imaging device, arrays of full-color imaging elements are made color selectively sensitive by a composite array of color filters disposed above the arrays. The highly efficient construction of such a filter array maximizes the amount of useful information based on human vision about subtle differences in color. Such filter arrangements are described, for example, in U.S. Pat. No. 3,971,065 issued July 20, 1976 to Bayer;
No. 4,047,203 issued September 6, 1977 to Dillon. However, the resolution inherent in such an array is not only limited by the number of imaging elements that can be placed in the array, but is further limited because only a portion of each element in the array contributes to the fine resolution. The spatial resolution of an array of color imaging elements of such a composite filter is therefore optimized for a particular structure, but is not as high as a monochromatic imaging array of the same number of elements.

British Patent No. 2029642 and Japanese Patent Publication No. 55-39404
Another structure proposed in No. 55-277772, No. 55-277773, No. 51-95720 is made such that a photosensitive element is superimposed on an information transfer device or solid substrate that can perform the switching function. .
This substrate is a MOS switching device or a CCD (charge coupled device) switching device. Such elements are described in detail in GB 2029642, the contents of which are hereby incorporated by reference. Such a structure has a potentially higher sensitivity due to the larger photosensitive area than a typical imaging device in which the photosensitive element is placed at the same height as the information transfer device. However, such devices must utilize multicolor filters, and the reduction in resolution is comparable to the conventional solid-state imaging devices described above. Furthermore, to create such a structure, the color filters must be arranged in a specific pattern over the image sensor, which makes alignment and combination of the color filters difficult, resulting in the difficulty of such devices. Manufacturing is complicated and expensive.

A technique for removing color filters with a vidicon is described in U.S. Pat. No. 3,617,753 to Kato et al.
The vidicon includes a conventional semiconductor layer with a substrate over a number of pn diodes that store electrical signals representative of light intensity. An electron beam scans the pn diode to retrieve the video information. By making the thickness of the semiconductor substrate through which the light that reaches the pn diode passes stepwise, light of different wavelengths hits the pn diode depending on the size of the step. In this way different groups of pn diodes can accumulate different colors of light. Alternatively, by forming the pn diodes at non-uniform depths from the surface, the thickness of the substrate can be substantially stepped. In another embodiment, solid state scanning can be used instead of electron beam scanning. There, junction devices and MOS
A device is utilized for each pixel, and selective etching of the substrate results in non-uniform distances between the photosensitive surface of the semiconductor substrate and the pixel bonding device. The disclosed device is not flattened by a stepped or truncated shape and does not have the advantages afforded to devices that utilize photoconductors as photoresponsive elements.

Solid state color image sensor arrays have been developed with potential resolution equal to that of monochromatic arrays of the same size. Such an image sensor
The array has a plurality of stacked channels (eg, three channels stacked for a three-color device), each channel having a different spectral response due to different absorption of light by the semiconductor material. (UK po91EF, Hampshire,
Hampshier, Havant,
"Color Responsive CCD Imaging Device" available from Honeywell's Industrial Opportunities Ltd.
Please refer to the research publication entitled August 1978, Volume 172, Publication Number 17240. ) However, the need to overlap the three channels requires extremely complex and expensive methods to manufacture such devices. CCDs (charge-coupled devices) are complex and expensive to manufacture because the channels carrying the information signal must be carefully created under strict constraints. Although it is possible to create a single channel on a substrate, overlaying another channel on top of it is complex and difficult.

Devices such as those described in the aforementioned Publication No. 17240 suggest that it is possible to create a large number of different channels in a silicon crystal that are stacked, which can serve as a stacked multi-channel color imaging device. There is. However, in addition to being expensive and complex to make as mentioned above, the color separation and selectivity of such devices is poor due to the inherent limitations of the materials used. The materials used to make such devices must have good single-crystal properties in addition to color-selective photosensitive elements to act as CCD channels.

As previously mentioned, there is a need in the industry for solid state color imaging devices that are extremely light sensitive and provide sharp image resolution. Utilizing a device in which a multicolor filter is superimposed on an array of imagers, the resulting image is
3971065, it has low resolution and low selectivity, and is complex and expensive to manufacture due to the need for precise placement of multicolor filters. Increased selectivity can be achieved by utilizing a device in which a photosensitive element is superimposed on an information transfer device, as described in GB 2029642. However, such devices still have some resolution limitations because they must use multicolor composite filters that also increase manufacturing complexity and cost. By utilizing a device with a sensor array of multiple superimposed channels, it is possible to obtain a resolution equal to that of a monochromatic array. However, in order to stack three channels on top of each other, complex and expensive manufacturing techniques must be utilized.

The present invention utilizes multiple photosensitive layers stacked on top of each other and on top of the substrate to increase sensitivity. Additionally, the present invention does not require multicolor composite filters since each photosensitive layer detects a different color of light. A device according to the invention has a resolution similar to that of a monochromatic array of the same size, and can be manufactured using simple, common, and inexpensive techniques.

The present invention provides a solid state color imaging device that can be manufactured using simple, inexpensive and conventional techniques such as conventional vacuum deposition techniques and sputtering techniques. This device is extremely sensitive to light and produces images with desirably high resolution given the characteristics of the human eye. The photodetection area of the majority of the individual color elements in the matrix is larger than the area of the corresponding element of an imaging device using a single photoconductive layer with a multicolor filter. The image resolution is also comparable to that of conventional monochromatic solid-state imaging devices with the same number of elements.

The device according to the invention includes a solid-state substrate for handling charge, and the photosensitive element is also located on this substrate. A plurality of photosensitive layers are overlaid on the substrate for absorbing and detecting light. The solid-state substrate may be any type of two-dimensional information device such as a charge-coupled device (CCD) or a MOS switching device. The substrate performs the switching and transfer functions in conjunction with the photosensitive layer and the photosensitive elements of the substrate itself. Each of the photosensitive layers superimposed on the substrate consists of three sublayers, including a top continuous transparent electrode layer, a mosaic pattern of back electrodes, and a photosensitive sublayer disposed therebetween. The back electrode of each layer is electrically connected to the solid substrate, such as the source or drain terminals of a MOS, CCD or other switching device, such as a photosensitive element on the substrate. Each of the photosensitive layers is electrically isolated from the other layers and from the solid substrate at all points except through electrical connections.

A primary object of the present invention is to provide a solid state color imaging device comprising a solid state substrate containing a photosensitive element and having a plurality of photosensitive layers, the photosensitive layers being connected to the photosensitive element of the substrate and each layer electrically connected to a terminal of the substrate. each successive photosensitive layer is sensitive to a wider band of light, absorbs this light, and absorbs this light, making it possible to read out the charge received from the photosensitive element. It allows the photosensitive element to detect only the light that has passed through the upper layer.

Another object of the invention is to provide a solid state color imaging device that can be manufactured without the need for multicolor filters.

Yet another object of the invention is to provide a solid state color imaging device that is highly sensitive to light.

Yet another object of the invention is to provide a solid state color imaging device capable of producing images with high resolution.

Yet another object of the invention is to provide a solid state color imaging device that is simple and inexpensive to manufacture.

The foregoing and other objects and advantages of the present invention will be further accomplished with the constructional details and use hereinafter described in detail with reference to the accompanying drawings, in which like numerals indicate like parts throughout the drawings and which form a part of this specification. Those skilled in the art can understand this by reading the law.

Before describing embodiments of solid state color imaging devices of the present invention, it is to be understood that the present invention is not limited to the particular arrangement of components illustrated, as such devices may be modified. be. Furthermore, the terms used in this specification are used to describe specific embodiments, and are not used in a limiting sense.

Referring now to FIG. 1, a conventional solid state color imaging device of the type having a photosensitive element superimposed on a substrate is shown. FIG. 1 is an exploded perspective view of a conventional solid-state color imaging device. Board 2
A photosensitive layer 3 is overlaid on the surface. The board 2 has many
MOS switching elements 6, 7, 8, 9, 10,
Contains 11. FIG. 1 shows only a portion of what such an imaging device would include. In fact, imaging devices include thousands of MOS elements. The elements 6, 7, 8, 9, 10 and 11 are used for various switching and transfer functions, for example in connection with red, green, blue, blue, red and green light respectively. Each of elements 6-11 includes a source terminal 12 and a drain terminal 13.

The photosensitive layer 3 consists of three sublayers which will be described below. Bottom sublamina or mosaic electrodes on the bottom dorsal layer 3
The innermost sublayers of all are electrically connected to elements 6-11. Layered on the photosensitive layer 3 are elements 6, 7, 8, 9, 10, 1, respectively.
1 corresponding to filter elements 14, 15, 16,
17, 18, 19. Filter element 14-
19 is used to prevent all light except monochromatic light from passing through. Therefore, for example,
Corresponding to the switching and transfer functions of the aforementioned elements 6-11, filter element 14 is used to block all light except red light, and filter element 15 is used to block all light except green light. The filter 16 prevents all light except blue light from passing through.

Since the photosensitive function within the layer 3 is distinguished from the switching and transfer functions within the substrate 2,
The device shown in FIG. 1 is much more sensitive to light than conventional devices in which the photosensitive function is performed at the same level as the switching and transfer functions. However, the device shown in Figure 1 still requires the use of multicolor filter elements 14-19, and since such filter elements require precise placement, the manufacture of this device is somewhat expensive. becomes. Filter element 14-1
9 are photosensitive parts 20, 21, 22, 23, 24, 25 formed by back electrodes, respectively;
It is used to block light before it reaches the target.

The combination of each MOS element 6-11, photosensitive portion 20-25 and filter 14-19 forms what is known in the art as a pixel. Therefore, the device portion shown in FIG. 1 shows six pixels. The present invention eliminates the need for multicolor filters while
Devices can be manufactured that utilize the same size substrate 2 containing six pixels or two sets of pixels as described below.

Referring now to FIG. 2, there is shown an exploded perspective view of a device according to the present invention. This imaging device includes MOS elements 6, 7, 8, 9, 1
0, 11 includes a substrate 2 disposed thereon. Photosensitive layers 3 and 4 are superimposed on substrate 2. Each layer 3 and 4 consists of sublayers which will be explained in more detail in connection with FIG. Photodiodes 5 and 5' are respectively
It is arranged on the substrate 2 in relation to the MOS elements 7 and 10. FIG. 2, like FIG. 1, shows only a small portion of an imaging device made up of thousands of identical parts. By arranging layers 3 and 4 and photodiodes 5 and 5' as shown in FIG. 2, distinct colors of light can be obtained without using a multicolor filter as shown in FIG. It becomes possible to detect the band.

Layers 3 and 4 include photosensitive elements 26 and 27, and layer 4 includes photosensitive elements 28 and 29. Each of elements 26-29 is connected to one of the MOS elements on substrate 2, and each photodiode 5 and 5' is associated with a MOS element on substrate 2. Elements 26 and 28 are elements 27 and 2
9 on top of each other, layers 3 and 4 cover all photodiodes on substrate 2. Although it will be easier to understand the invention if layers 3 and 4 are described as consisting of photosensitive elements 28, 29, etc., in each layer the upper electrode sublayer and the photoconductive sublayer pass through the holes. It should be understood that continuous layers are preferred except for. The bottom mosaic electrode layer is not continuous and forms the boundaries of each photosensitive element. Each of layers 3 and 4 not only detects a given color of light, but also absorbs that color. Thus, two colors, for example blue and green, are detected and absorbed, and a single color, for example red, impinges on elements 5 and 5'.

Elements 26 and 28 are connected to MOS elements 9 and 6, respectively. MOS elements 9 and 6, photosensitive elements 26 and 28 on substrate 2, and MOS elements on substrate 2.
The combination of element 10 and associated photodiode 5' constitutes a so-called set of pixels. Two sets of pixels are shown in FIG. Each set of pixels can detect three separate colors of light. The MOS elements are arranged in an L-shaped pattern as shown in FIG. However, the MOS elements can be arranged in any number of different patterns, such as linear patterns or rectangular patterns, and can be connected to the back electrode in a variety of different ways. Element 28 is connected to substrate 2 via wiring 45, and element 26 is connected to substrate 2 via wiring 44.

Layers 3 and 4 will now be described in detail with reference to FIG. 3, which is a longitudinal cross-sectional plan view of the imaging device of the present invention. As already pointed out, each of the photosensitive layers 3 and 4 consists of three sublayers. Layer 3 is small layer 32, 33,
34 and layer 4 includes sublayers 35, 36, 37. Layer 3 is insulated from substrate 2 by a layer 41 of insulating material. Layer 3 is insulated from layer 4 by a layer 42 of insulating material. Each of layers 3 and 4 is therefore electrically insulated from each other and from substrate 2 at all points except via electrical traces 44 and 45.

The photosensitive layer 3 comprises a top transparent electrode sublayer 34 and a bottom mosaic-like opaque electrode sublayer 32 . A sublayer 33 of photosensitive material is located between sublayers 32 and 34. Layer 4 includes similar components as layer 3. The bottom mosaic electrode sublayers 32 and 35 must be transparent. Further, each of layers 3 and 4 has a fifth
- It is made to be able to react to and absorb light of different colors as explained in detail in connection with Figure 5C.

By constructing the device as shown in Figures 2 and 3, it is possible to eliminate the need for a complex multicolor filter array. More specifically, devices according to the present invention do not require a filter array structure as shown in FIG. 1 and disclosed in US Pat. No. 3,971,065 and US Pat. No. 4,047,203. Because the device according to the invention does not require a composite (multicolor) color filter on top of the solid state device, the device according to the invention can be manufactured relatively easily at relatively low cost.

Although the device according to the invention can operate without the need for any filters, it is possible to utilize one broadband type filter superimposed on the outermost photosensitive layer 4. Such filters can be designed to block light invisible to the human eye, such as light with wavelengths below 4000 Å or above 7700 Å, ie, ultraviolet and infrared light.

Referring now to FIG. 4, a perspective view of an imaging device according to the present invention can be seen. The light impinges on the top surface of the outermost layer 4, as shown in FIG. Part of this light is absorbed by layer 4, the remaining light impinges on layer 3 where further light is absorbed, and the remaining light impinges on substrate 2, as will be explained in more detail below. As is well known, photodiodes 5 and 5' are arranged on a substrate 2 and connected to a MOS element 7.
and 10. 5 and 5' prior to the development of the stacked photosensitive layer structure shown in FIG.
An array of photodiode elements, such as , was used as the only detection means. As previously mentioned, such a structure was less sensitive to light due to the small size of the photodiode, and such a structure also required the use of a polychromatic filter array.

The operation of the imaging device of the present invention will be described in detail with reference to FIG. 5 in combination with FIGS. 5a-5c.
FIG. 5 is a longitudinal cross-sectional view of the same device shown in FIG. 3, but simplified such as not showing the sublayers. Figures 5a, 5b and 5c respectively show that in addition to the light detected by photodiodes 5 and 5' on substrate 2, layer 3
4 is a graph plotting both wavelength vs. absorption and wavelength vs. photoconductivity for light absorbed and detected inside 4.

When layer 4 is exposed to light in the wavelength range to which layer 4 responds, the resistance of photoconductive sublayer 36 (see FIG. 3) decreases in a particular element 28 (see FIG. 2). This reduced resistance can be detected and recorded electrically by utilizing the electrode sublayers 37 and 35 in conjunction with the MOS device 6 inside the substrate 2. The particular method of recording the reduction in electrical resistance performed in conjunction with the detection of light is not part of this invention and is well known. This reduced resistance represents the intensity of the blue light striking the elements 28 of layer 4 (see FIG. 5a). Furthermore, layer 4 absorbs light only in the blue region, as shown by the absorption curve in FIG. 5a. layer 4
The light that passes through contains only the green and red parts of the spectrum. Layer 4 absorbs all light having a wavelength of 5000 Å or less and allows the remainder of this light to reach layer 3. Furthermore, layer 4 is sensitive to light having a wavelength of 5000 Å or less.

When layer 3 is exposed to light in the wavelength range to which layer 3 reacts, the resistance of photosensitive sublayer 33 (see FIG. 3) changes to that of element 2.
6 (see Figure 2). The reduced resistance changes the current as described above. Therefore, the green light impinging on the photosensitive element 26 can be detected in conjunction with the MOS element 9. Layer 3 also absorbs light in the green region, as shown by the absorption curve for layer 3. The material inside layer 3 actually absorbs blue and green light, but the blue light has been absorbed or filtered by layer 4. Therefore, layer 3
By the combination of and 4, all blue and green light is filtered and only red light passes through. Layer 4 is 6000
Filters light with wavelengths of Å or less, 6000 Å
Sensitive to light with wavelengths above or below. However, since light with a wavelength of 5000 Å or less is filtered by layer 4, layer 3 has a wavelength of 5000 Å or less.
light with a wavelength between 6000 Å, i.e. green light,
The layer 3 responds to this light.

As shown in Figure 5c, photodiodes 5 and 5' on substrate 2 absorb all visible light;
It is somewhat sensitive to all visible light. However, photodiode elements 5 and 5' are most sensitive to light in the red part of the spectrum. As already explained, layer 4 has already absorbed blue light and layer 3 has already absorbed green light. Therefore, only red light hits the substrate 2, so that the elements 5 and 5' are hit by the red light. When red light hits elements 5 and 5',
The electrical current changes in such a way that light can be detected by electrical impulses.

By utilizing layers 3 and 4 and elements 5 and 5' having specific absorption capacities and photoconductivity as described above, it is possible to precisely detect the light impinging on any particular area of the imaging device and to adjust the wavelength. , and hence the color of the light falling on that area. The intensity of light impinging on any part of the layer or on any photosensitive element can also be measured by the degree of change in resistance. Layers 3 and 4 are made in such a way that small variations in resistance can be measured, so that the relative intensity of light of any particular wavelength striking any particular element of the photosensitive layer can be determined by electronic means in relation to substrate 2. Can be detected and recorded.

The color imaging devices disclosed herein can be manufactured in a variety of different embodiments. Although structural details are not shown, the imaging array can be manufactured as shown in the aforementioned British patent. However, modifications are required to provide two photosensitive layers and an opening for connecting the bottom electrode of each photosensitive layer to a MOS device on the semiconductor substrate. Furthermore, the substrate 2 must have some type of photosensitive element, such as photodiodes 5 and 5', and the arrangement of structures for such photosensitive elements is well known.

Shown in Figures 2, 3, 4 and 5 and 5a-5
The embodiment described in connection with Figure c is considered the preferred embodiment of the invention. The upper layer 4 detects blue light.
The second layer 3 detects and absorbs at least green light, and the photodiodes 5 and 5' detect at least red light. By manufacturing layers 3 and 4 to be able to detect and absorb light, layers 3 and 4 act both as sensors and as filters. Therefore, the need for multicolor filters that must be arranged in a complex array is eliminated, while the ability to detect different colors of light is retained.

The device shown in FIG. 5 and described in connection with FIGS. 5a-5c can be manufactured in various ways to achieve different end results. When manufacturing a device intended to work in this manner, the material within each of the photosensitive layers, as well as the insulating material within the insulating layer, must be manufactured in a specific manner.

The insulating material inside layers 41 and 42 is SiO ₂ ,
Choose from a number of electrical insulating materials such as Si ₃ N ₄ , polyimide, polyamide, photoresist or other known organic polymers.

The topmost photosensitive layer 4 is sensitive to blue light;
Made of materials selected from the group consisting of CdS, ZnCdS and ZnSeTe. Layer 3 is sensitive to both blue and green light and absorbs both but absorbs only green light as the blue light is filtered by layer 4.
Made from amorphous selenium, CdSe or GaAsP. Photodiodes 5 and 5' are sensitive to blue, green and red light and absorb light of all colors. Since the blue and green light have been filtered by layers 3 and 4, the photodiode detects only the red light. Photodiodes 5 and 5' are manufactured using conventional methods and include GaAlAs, GaAsP, ZnCdTe, CdTe,
Made from a material selected from the group consisting of amorphous hydrogen silicide.

Depending on the particular type of photosensitive layer and element utilized and how the device is used, different voltages may be utilized for device operation. Additionally, different voltages may be utilized in conjunction with each of the photosensitive layers or elements depending on the particular result desired.

A solid state color imaging device according to the present invention has been described in what is considered to be the most practical and preferred embodiment. References to specific materials, specific terminology, and specific sensitivity of the photosensitive layer to specific wavelengths or colors of light are made solely to disclose preferred embodiments. It is also recognized that modifications may be made to such embodiments within the scope of the invention, and changes may occur that occur to those skilled in the art upon reading the embodiments.

[Brief explanation of the drawing]

FIG. 1 is an exploded perspective view of a conventional solid-state color imaging device showing a photoconductive layer stacked on a substrate, and FIG. 2 is an exploded perspective view of a solid-state color imaging device of the present invention showing a two-layer, three-layer structure. FIG. 3 is a longitudinal sectional view of the solid-state color imaging device of the invention, FIG. 4 is a schematic perspective view of the solid-state color imaging device of the invention, and FIG. 5 is a longitudinal sectional view of the solid-state color imaging device of the invention.
Figures 5a, 5b and 5c plot absorption versus wavelength and photoconductivity versus wavelength for light absorbed and detected within the outermost layer, second layer and base layer, respectively, of a solid state color imaging device of the present invention. This is a graph. 2... Substrate, 3, 4... Photosensitive layer, 6, 7, 8,
9, 10, 11...MOS switching element, 5,
5'...Photodiode, 26, 27, 28,
29...Photosensitive element, 32, 33, 34, 35, 3
6, 37... Small layer, 41, 42... Insulating material.

Claims (1)

Claims: 1. A solid substrate comprising an array of electrical switching elements, a layer of insulating material disposed on the substrate, a first photosensitive layer superimposed on the layer of insulating material, a first photosensitive layer superimposed on the layer of insulating material, a layer of an insulating material disposed on a first photosensitive layer, and a second photosensitive layer superimposed on the layer of insulating material, on the substrate a first plurality of the electrical switching elements; each associated with a plurality of photosensitive elements, said first photosensitive layer comprising a top transparent electrode sublayer, a back transparent mosaic electrode sublayer, and said top electrode sublayer and said back electrode sublayer. said back mosaic electrode sublayer is divided into an array of portions corresponding to a second plurality of said electrical switching elements on said substrate; The divided portions of the electrode sublayer are each electrically connected to the second plurality of electrical switching elements on the substrate, and the second photosensitive layer includes an upper transparent electrode sublayer and a back transparent electrode sublayer. a tessellated electrode sublayer, and a photoconductive sublayer disposed between said top electrode sublayer and said back electrode sublayer, said back tessellated electrode sublayer being a third electrode sublayer on said substrate. is divided into an array of portions corresponding to the plurality of electrical switching elements on the substrate, and the divided portions of the back mosaic electrode layer are each electrically connected to the third plurality of electrical switching elements on the substrate. connected, said first photosensitive layer and said second photosensitive layer being sensitive to and absorbing different ranges of the visible wavelength spectrum, whereby said first photosensitive layer and said second photosensitive layer are sensitive to and absorbing different ranges of the visible wavelength spectrum;
2, characterized in that the electrical signals from the photosensitive layer represent light intensities of two different color ranges, and the photosensitive elements on the substrate represent light intensities of a third color range.
A solid-state color imaging device with a three-layer structure. 2. The substrate and the plurality of photosensitive layers stacked on each other are such that the photosensitive element formed on the substrate has wavelength-to-absorption characteristics over a predetermined wide range from a low-band spectrum to a high-band spectrum of light; The photosensitive layer laminated closest to the substrate has wavelength absorption characteristics in a predetermined range from a lower spectrum to a higher spectrum narrower than the photosensitive element, and the photosensitive layer laminated furthest from the substrate is manufactured and arranged so as to have wavelength absorption characteristics in a predetermined range from a lower spectrum to a higher spectrum that is narrower than the photosensitive layer laminated closest to the substrate. A solid-state color imaging device having a two-layer, three-story structure according to scope 1. 3. The second photosensitive layer is sensitive to and absorbs light in the blue region of the optical spectrum, and the first photosensitive layer is not sensitive to light in the red region of the optical spectrum, but is at least sensitive to light in the green region. absorb this light,
2. A two-layer, three-level solid-state color imaging device according to claim 1, wherein the photosensitive element of the substrate is sensitive to light in at least the red region of the optical spectrum. 4 The second photosensitive layer is CdS, ZnCdS, ZnSeTe
The first photosensitive layer is made of a photosensitive material selected from the group consisting of amorphous selenium, CdSe,
2. A solid-state color imaging device having a two-layer, three-layer structure as claimed in claim 1, characterized in that the device is made of a photosensitive material selected from the group consisting of GaAsP. 5. A solid-state color imaging device with a two-layer, three-level structure according to claim 1, wherein the electric switching element arranged on the substrate is a MOS type device or a CCD device. 6 consisting of a solid substrate consisting of a number of electrical switching elements arranged in three sets and two vertically arranged photosensitive layers superimposed on each other on said substrate having photosensitive elements on a part of the surface; Each of the photosensitive layers consists of a top transparent electrode sublayer, a back transparent mosaic electrode sublayer, and a photoconductive sublayer disposed between the top electrode sublayer and the back electrode sublayer; Each of the back mosaic electrode sublayers is divided into an array of parts corresponding to the electrical switching elements, and the divided parts of the back mosaic electrode sublayer of each of the photosensitive layers are connected to the three sets of electrical switching elements. By electrically connecting to a corresponding one of the elements, the segmented portions of the back mosaic electrode sublayer vertically disposed on each of the two photosensitive layers can be connected to each of the three sets. The photosensitive elements of the substrate are also connected to one of the electrical switching elements of the set, forming a multi-set pixel array in association with a corresponding element of the electrical switching elements of each of the three sets, and the photosensitive element of the substrate The photosensitive elements of the layer and the substrate are sensitive to and absorb different ranges of the visible wavelength spectrum, such that the electrical signals received from each of the photosensitive elements of the photosensitive layer and the substrate are in three different colors. A solid-state color imaging device having a two-layer and three-layer structure, which is characterized by representing a range of light intensity. 7. The substrate and the plurality of photosensitive layers stacked on each other are such that the photosensitive element formed on the substrate has wavelength absorption characteristics over a predetermined wide range from a low spectrum of light to a wide spectrum of light; The photosensitive layer laminated closest to the substrate has absorption characteristics for wavelengths in a predetermined range from a narrow low spectrum to a wide spectrum than the photosensitive element, and the photosensitive layer laminated furthest from the substrate has wavelength absorption characteristics in a predetermined range from a narrow low band spectrum to a wide spectrum. Claim 6, characterized in that the photosensitive layer is manufactured and arranged so as to have wavelength-to-absorption characteristics in a predetermined range from a narrower low-band spectrum to a wider spectrum than the photosensitive layer stacked closest to the substrate. A solid-state color imaging device having a two-layer and three-layer structure as described in 2. 8. The two photosensitive layers are the outermost layer furthest from the substrate and sensitive to and absorbing light in the blue region of the optical spectrum; the outermost layer is insensitive to light in the red region of the optical spectrum but at least in the green region; Two layers 3 according to claim 6, characterized in that the photosensitive element of the substrate is sensitive to light at least in the red region of the light spectrum, consisting of a layer that is sensitive to light and absorbs this light. Solid-state color imaging device. 9. The two-layer, three-level solid-state color imaging device according to claim 6, wherein the electric switching element arranged on the substrate is a MOS type device or a CCD device. 10 a semiconductor switching matrix comprising a matrix of electrical switching elements in a CCD configuration; a first plurality of photoconductors responsive to and absorbing light in a relatively low band of the visible spectrum;
a second plurality of photoconductors responsive to and absorbing a higher band of light than at least the first plurality of photoconductors, the first plurality of said electrical switching elements having an equal number of photoconductors; wherein the first plurality of photoconductors are associated with the first plurality of photoconductors;
a plurality of photoconductors each electrically connected to a second plurality of said electrical switching elements to send an electrical signal representative of the intensity of light to which said second plurality of photoconductors respond to said electrical switching element; are each electrically connected to a third plurality of said electrical switching elements for transmitting to said electrical switching element an electrical signal representative of the intensity of light to which said second plurality of photoconductors react; the first plurality of photoconductors, the second plurality of photoconductors and the semiconductor switching matrix constitute three superimposed layers of a solid state imaging device;
These three layers are such that light impinging on the solid-state imaging device first impinges on the first plurality of photoconductors;
The unabsorbed wavelengths of light thereby impinge on the second plurality of photoconductors, thereby superimposing the structure such that the unabsorbed wavelengths of light impinge on the photosensitive element, thereby Said first
and a second and third plurality of electrical switching elements each representing three different bands of light intensity. 11 each of said first and second plurality of photoconductors comprises a layer of photoconductive material having a top electrode and a bottom electrode, said bottom electrode forming an individual photoconductor of said plurality of photoconductors; A solid-state color imaging device having a two-layer, three-story structure according to claim 10.