JPS6336659B2 - - Google Patents
Info
- Publication number
- JPS6336659B2 JPS6336659B2 JP20123881A JP20123881A JPS6336659B2 JP S6336659 B2 JPS6336659 B2 JP S6336659B2 JP 20123881 A JP20123881 A JP 20123881A JP 20123881 A JP20123881 A JP 20123881A JP S6336659 B2 JPS6336659 B2 JP S6336659B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photomask
- thin film
- present
- film pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置、集積回路装置などの製造
に用いられるフオトマスクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used for manufacturing semiconductor devices, integrated circuit devices, etc.
従来フオトマスクは１枚の薄いガラス基板上に
薄膜パターンが形成されているため、マスクのパ
ターン形状が微細化されるにしたがつてガラス基
板が有する熱膨張率によつてパターン形状が変化
し易すくなつたり、高密度パターンで貴重なフオ
トマスクの完成品が破損したりする欠点があつ
た。そのため熱膨張率の小さな石英ガラスが高品
質なマスクには用いられるが高価である欠点があ
つた。 Conventionally, photomasks have a thin film pattern formed on a single thin glass substrate, so as the pattern shape of the mask becomes finer, the pattern shape tends to change depending on the coefficient of thermal expansion of the glass substrate. There were drawbacks such as dripping and high-density patterns that could damage the valuable finished photomask. For this reason, quartz glass with a small coefficient of thermal expansion is used for high-quality masks, but it has the disadvantage of being expensive.
本発明は上記欠点を除去し、高品質で耐久性の
あるフオトマスクを提供することを目的とする。
そしてその目的は光に対して透明な基板表面の一
部に光に対して不透明な薄膜パターンを有する第
１の基板の裏面に光に対して透明な第２の基板を
接着層を介して密着したことを特徴とするフオト
マスクを提供することによつて達成される。 The present invention aims to eliminate the above-mentioned drawbacks and provide a high quality and durable photomask.
The purpose is to attach a second substrate that is transparent to light to the back side of the first substrate, which has a thin film pattern that is opaque to light on a part of the surface of the substrate that is transparent to light, via an adhesive layer. This is accomplished by providing a photomask that is characterized by:
以下本発明による実施例を図面により詳説す
る。第１図は従来のフオトマスクを示す断面図で
あり、基板１上に薄膜パターン２が形成されてい
る。第２図は本発明によるフオトマスクの断面図
であり、薄膜パターン２が形成され第１の基板３
と第２の基板４とが接着層５を介して密着してい
る。 Embodiments according to the present invention will be explained in detail below with reference to the drawings. FIG. 1 is a sectional view showing a conventional photomask, in which a thin film pattern 2 is formed on a substrate 1. FIG. 2 is a cross-sectional view of a photomask according to the present invention, in which a thin film pattern 2 is formed on a first substrate 3.
and second substrate 4 are in close contact with each other with adhesive layer 5 interposed therebetween.
通常フオトマスク基板１の厚さは約0.09インチ
のものが用いられるが本発明によるフオトマスク
は第１の基板３と第２の基板４とを例えばバルサ
ムなどを用い接着して従来のフオトマスク厚と同
じ0.09インチとすることができる。ここで例えば
第１の基板３には低コストなソーダライムガラス
を用い、第２の基板４には薄い石英ガラスを用い
ることにより、ソーダライムガラスの熱膨張率よ
り小さくすることができる。また複合ガラス化に
より機械的強度が向上する効果を有する。ここで
高価な石英ガラスは１枚で用いる場合の半分以下
の膜厚にすることが可能であり大幅なコストダウ
ン効果を有する。 Normally, the thickness of the photomask substrate 1 used is about 0.09 inch, but the photomask according to the present invention has a thickness of 0.09 inch, which is the same as that of the conventional photomask, by bonding the first substrate 3 and the second substrate 4 using, for example, balsam. It can be inches. Here, for example, by using low-cost soda lime glass for the first substrate 3 and using thin quartz glass for the second substrate 4, the coefficient of thermal expansion can be made smaller than that of soda lime glass. Furthermore, the composite vitrification has the effect of improving mechanical strength. Here, the film thickness of expensive quartz glass can be reduced to less than half that when a single sheet is used, which has a significant cost reduction effect.
また本発明の他の実施例として、例えば第２の
基板４をレジストの感光波長として用いられる露
光用の高圧水銀灯のＨラインおよびＩラインの波
長のみを透過させるようなバンドパスフイルタと
して構成することが可能である。この感光波長の
狭帯域化により、より微細なパターンの露光、現
像およびエツチングが可能となる。 As another embodiment of the present invention, for example, the second substrate 4 may be configured as a bandpass filter that transmits only the H line and I line wavelengths of a high-pressure mercury lamp for exposure, which are used as the photosensitive wavelengths of the resist. is possible. This narrow band of photosensitive wavelength enables exposure, development, and etching of finer patterns.
本発明によれば、温度による変化がなく高精度
で耐久性の強いフオトマスクを低コストで製造す
ることが可能となる。 According to the present invention, it is possible to manufacture a highly accurate and durable photomask that does not change due to temperature at low cost.
第１図は従来のフオトマスクを示すマスク断面
図であり、第２図は本発明によるフオトマスクの
断面図を示している。
ここで、１は基板、２は薄膜パターン、３は第
１の基板、４は第２の基板、５は接着層を示して
いる。
FIG. 1 is a cross-sectional view of a conventional photomask, and FIG. 2 is a cross-sectional view of a photomask according to the present invention. Here, 1 is a substrate, 2 is a thin film pattern, 3 is a first substrate, 4 is a second substrate, and 5 is an adhesive layer.
Claims (1)
て不透明な薄膜パターンを有するフオトマスクに
おいて、前記薄膜パターンを有する第１の基板の
裏面に光に対して透明な第２の基板を接着層を介
して密着したことを特徴とするフオトマスク。1. In a photomask that has a thin film pattern that is opaque to light on a part of the surface of the substrate that is transparent to light, a second substrate that is transparent to light is adhered to the back surface of the first substrate that has the thin film pattern. A photomask that is characterized by being in close contact with each other through layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201238A JPS58102233A (en) | 1981-12-14 | 1981-12-14 | photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201238A JPS58102233A (en) | 1981-12-14 | 1981-12-14 | photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102233A JPS58102233A (en) | 1983-06-17 |
| JPS6336659B2 true JPS6336659B2 (en) | 1988-07-21 |
Family
ID=16437622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201238A Granted JPS58102233A (en) | 1981-12-14 | 1981-12-14 | photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102233A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0552253U (en) * | 1991-12-20 | 1993-07-13 | 東洋ラジエーター株式会社 | Fuel cooler for internal combustion engine |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002090982A (en) * | 2000-09-13 | 2002-03-27 | Kimoto & Co Ltd | Method for manufacturing photomask, and photomask |
| JP2002169264A (en) * | 2000-11-30 | 2002-06-14 | Kimoto & Co Ltd | Method of making photomask and photomask |
-
1981
- 1981-12-14 JP JP56201238A patent/JPS58102233A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0552253U (en) * | 1991-12-20 | 1993-07-13 | 東洋ラジエーター株式会社 | Fuel cooler for internal combustion engine |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58102233A (en) | 1983-06-17 |
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