JPS6341866B2 - - Google Patents
Info
- Publication number
- JPS6341866B2 JPS6341866B2 JP54122770A JP12277079A JPS6341866B2 JP S6341866 B2 JPS6341866 B2 JP S6341866B2 JP 54122770 A JP54122770 A JP 54122770A JP 12277079 A JP12277079 A JP 12277079A JP S6341866 B2 JPS6341866 B2 JP S6341866B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- dielectric
- composition
- 2tio
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
〔産業上の利用分野〕
本発明は、Pb2Nb2O7―Bi2O3・2TiO2系で構成
された温度補償用誘電体磁器組成物に関するもの
である。
〔従来技術〕及び〔発明が解決しようとする問題
点〕
従来より、温度補償用誘電体磁器組成物として
はSrTiO3、CaTiO3、MgTiO3、La2O3・2TiO2
等のTiO2系組成物を主成分とするものが知られ
ている。
ところが、これらの組成物を主成分とするもの
は焼成温度が1300〜1400℃と高く、誘電率の温度
係数T・Cは−650ppm/℃〜−1200ppm/℃の
範囲で、誘電率は120〜150位が一般的であるが、
上記組成物の最大の欠点は、常温での誘電率と温
度係数の関係は誘電率が大きくなる程温度係数の
値も大きくなり、温度係数の値を小さくするとお
のずと誘電率も小さくなることであつた。
一方、最近の超小型・大容量コンデンサへの要
求は一般用のみならず、通信工業の応用分野へも
拡大しており、従来以上の小型化・大容量化が要
求されている。これらの要求に応えるものとし
て、誘電体磁器の厚さを0.1〜0.2mmに薄くする方
法や、50μm程度の膜厚で多重層を形成した積層
磁器コンデンサが実用化されている。
しかしながら、前述の従来の誘電体組成物を用
いて磁器の厚さを薄くするのは困難であつた。す
なわち、その焼成温度が1300〜1400℃と高い為
に、素体の変形や製造歩留の低下が伴うだけでな
く、焼結時に多量の熱エネルギーを必要とする為
に焼成炉材の熱的劣化損失が激しく、従つて焼成
装置の保全費がかさむ等の欠点があつた。
また最近急速に普及しつつある積層磁器コンデ
ンサにあつては、製造方法上、内部電極を磁器誘
電体に埋込んだ状態で焼結する必要があり、焼成
温度が1000℃を超える従来の磁器誘電体では、
1300℃以上の高温で安定ではあるものの高価な貴
金属、白金、パラジウムもしくはこれらの合金を
使用しなければならなかつた。それ故、もし1000
℃以下程度の低温度焼結可能な磁器誘電体を積層
磁器コンデンサとして用いることが可能であれ
ば、埋込み内部電極に銀系、ニツケル系、アルミ
系等の安価な金属材料を内部電極として使用出来
ることになり、製造コスト面で極めて有利であ
る。もちろん低温度焼結で得られた磁器誘電体
は、絶縁抵抗が高く、誘電率が比較的大きく、誘
電体損失が小さく、かつ温度変化率の優れたもの
が必要とされる。
しかしながら従来、これらの条件を備えた低温
度焼結による安定な磁器誘電体は少なく、その実
現が望まれていた。
〔問題点を解決するための手段〕
本発明者らは、上述の要請に鑑み、鋭意研究の
結果、Pb2Nb2O7―Bi2O3・2TiO2系で構成された
磁器組成物とすると共に、これら2成分の配合比
を変化させることによつて1000℃附近の低温度焼
結が可能で、誘電率が高く、しかも温度変化率が
直線性を示し、静電容量温度特性が極めて優れた
温度補償用誘電体磁器組成物が得られることを知
見し、本発明に到達したものである。
すなわち本発明は、Pb2Nb2O7…40.0〜99.0mol
%、Bi2O3・2TiO2…1.0〜60.0mol%の範囲の組
成からなることを特徴とする温度補償用誘電体磁
器製造用粉末組成物である。
以下、実施例によつて本発明を詳述する。
〔実施例〕
出発原料として酸化鉛(PbO)、酸化ニオブ
(Nb2O5)、酸化ビスマス(Bi2O3)、酸化チタン
(TiO2)、炭酸マンガン(MnCO3)を用い、
Pb2Nb2O7・Bi2O3・2TiO2の形の中間原料をあら
かじめ製造し、第1表に示した成分比率に秤量調
合した。
これらの原料配合物を合成樹脂ボールミルで湿
式混合した後、700〜850℃で2時間仮焼し化学反
応を行なわしめた。この反応物を、ふたたびボー
ルミルを用いて粒子径数μm程度に粉砕混合した。
この混合物に粘結剤としてポリビニールアルコ
ール(PVA)を適当量加え、約3トン/cm2の成
形圧力で直径16.5mm、厚さ0.6mmの円板状成形物
を作成した。この成形物は高温での鉛成分の蒸発
を防ぐ為、マグネシア磁器製容器に密閉して、約
930〜1050℃で2時間本焼成した。こうして得ら
れた磁器素体の両端面に銀電極を780℃で焼付し
た。
このようにして製造した試料それぞれについて
電気的特性を測定した結果を第1表、第1図及び
第2図に示す。
ここで誘電率εsおよび誘電体損失(tanδ)は、
周波数1KHzで測定した。
静電容量は室温20℃を基準として測定し、Q値
はYEW社製(モデルNo.4043A)Qメータを使用
した。また、静電容量温度係数については、ブン
トン社製(モデルNo.74D)キヤパシタンスブリツ
ジと、エレクトプト社製(モデルNo.EW―102)
恒温槽を使用した。
第1図は、Pb2Nb2O7とBi2O3・2TiO3の組成比
と、磁器組成物の焼成温度、誘電率との関係を示
す。第2図は同じく組成比とQ値、静電容量温度
係数との関係を示す。
[Industrial Application Field] The present invention relates to a temperature-compensating dielectric ceramic composition composed of a Pb 2 Nb 2 O 7 -Bi 2 O 3 .2TiO 2 system. [Prior Art] and [Problems to be Solved by the Invention] Conventionally, temperature-compensating dielectric ceramic compositions include SrTiO 3 , CaTiO 3 , MgTiO 3 , La 2 O 3 .2TiO 2
It is known that the main component is a TiO 2 -based composition such as . However, products containing these compositions as main ingredients have a high firing temperature of 1300 to 1400°C, a temperature coefficient of dielectric constant T・C in the range of -650 ppm/°C to -1200 ppm/°C, and a dielectric constant of 120 to 1400°C. 150th place is common,
The biggest drawback of the above composition is that the relationship between the dielectric constant and the temperature coefficient at room temperature is that the larger the dielectric constant, the larger the temperature coefficient, and the smaller the temperature coefficient, the smaller the dielectric constant. Ta. On the other hand, the recent demand for ultra-small, large-capacity capacitors is expanding not only to general use but also to the application field of the communication industry, and smaller capacitors and larger capacitances are required than ever before. In order to meet these demands, methods have been put into practical use in which the thickness of dielectric ceramic is reduced to 0.1 to 0.2 mm, and multilayer ceramic capacitors in which multiple layers are formed with a film thickness of about 50 μm. However, it has been difficult to reduce the thickness of porcelain using the above-mentioned conventional dielectric compositions. In other words, the firing temperature is as high as 1,300 to 1,400°C, which not only causes deformation of the element and a decrease in manufacturing yield, but also requires a large amount of thermal energy during sintering, which reduces the thermal efficiency of the firing furnace material. There were drawbacks such as severe deterioration losses and increased maintenance costs for the firing equipment. Furthermore, in the case of multilayer porcelain capacitors, which are rapidly becoming popular these days, the manufacturing method requires that the internal electrodes be sintered while being embedded in a porcelain dielectric material, which is different from conventional porcelain dielectric capacitors whose firing temperature exceeds 1000°C. In the body,
Although stable at high temperatures of 1300°C or higher, expensive precious metals such as platinum, palladium, or alloys thereof had to be used. Therefore, if 1000
If it is possible to use a ceramic dielectric material that can be sintered at low temperatures below ℃ as a multilayer ceramic capacitor, inexpensive metal materials such as silver, nickel, and aluminum can be used for the embedded internal electrodes. This is extremely advantageous in terms of manufacturing costs. Of course, the porcelain dielectric obtained by low-temperature sintering is required to have high insulation resistance, relatively large dielectric constant, small dielectric loss, and excellent temperature change rate. However, until now, there have been few stable ceramic dielectric materials that meet these conditions and are produced by low-temperature sintering, and the realization of such materials has been desired. [Means for Solving the Problems] In view of the above-mentioned requirements, the present inventors have conducted intensive research and have developed a ceramic composition composed of the Pb 2 Nb 2 O 7 -Bi 2 O 3 .2TiO 2 system. In addition, by changing the blending ratio of these two components, low temperature sintering around 1000℃ is possible, the dielectric constant is high, the temperature change rate is linear, and the capacitance temperature characteristics are extremely high. The present invention was developed based on the discovery that an excellent dielectric ceramic composition for temperature compensation can be obtained. That is, the present invention provides Pb 2 Nb 2 O 7 ...40.0 to 99.0 mol
%, Bi 2 O 3 .2TiO 2 ...1.0 to 60.0 mol % of the powder composition for manufacturing dielectric ceramics for temperature compensation. Hereinafter, the present invention will be explained in detail with reference to Examples. [Example] Using lead oxide (PbO), niobium oxide (Nb 2 O 5 ), bismuth oxide (Bi 2 O 3 ), titanium oxide (TiO 2 ), and manganese carbonate (MnCO 3 ) as starting materials,
Intermediate raw materials in the form of Pb 2 Nb 2 O 7 .Bi 2 O 3 .2TiO 2 were prepared in advance and weighed and mixed into the component ratios shown in Table 1. These raw material mixtures were wet mixed in a synthetic resin ball mill and then calcined at 700-850°C for 2 hours to carry out a chemical reaction. This reaction product was pulverized and mixed again using a ball mill to a particle size of approximately several μm. An appropriate amount of polyvinyl alcohol (PVA) was added as a binder to this mixture, and a disc-shaped molded product with a diameter of 16.5 mm and a thickness of 0.6 mm was produced at a molding pressure of about 3 tons/cm 2 . This molded product is sealed in a magnesia porcelain container to prevent the lead component from evaporating at high temperatures.
Main firing was performed at 930-1050°C for 2 hours. Silver electrodes were baked at 780°C on both end faces of the porcelain body thus obtained. The results of measuring the electrical characteristics of each of the samples thus manufactured are shown in Table 1, FIG. 1, and FIG. 2. Here, the dielectric constant ε s and dielectric loss (tan δ) are
Measured at a frequency of 1KHz. The capacitance was measured based on a room temperature of 20° C., and the Q value was measured using a Q meter manufactured by YEW (Model No. 4043A). Regarding the capacitance temperature coefficient, the capacitance bridge manufactured by Bunton (Model No. 74D) and the capacitance bridge manufactured by Electop (Model No. EW-102) are used.
A constant temperature bath was used. FIG. 1 shows the relationship between the composition ratio of Pb 2 Nb 2 O 7 and Bi 2 O 3 .2TiO 3 and the firing temperature and dielectric constant of the ceramic composition. FIG. 2 similarly shows the relationship between the composition ratio, Q value, and capacitance temperature coefficient.
【表】【table】
以上の様に、本発明のPb2Nb2O7―Bi2O3・
2TiO2系温度補償用誘電体磁器組成物によると静
電容量温度係数が約−650×10-6/℃〜1200×
10-6/℃の範囲で誘電率が約160〜180と向上し、
しかも焼結温度が930〜1050℃の低温度焼結が可
能となつた為に、積層磁器コンデンサに使用した
場合、内部電極に銀合金系等の如き低融点金属の
使用が可能となつた。したがつて、従来の高温領
域焼結材に比較して熱エネルギーの消費量が少な
くてすみ、焼成炉材等の保全費節減に格段の効果
があり、省エネルギーの観点からコスト面で極め
て有利な温度補償用誘電体磁器組成物を提供する
ことができるので、工業上の利益大なるものがあ
る。
As described above, the Pb 2 Nb 2 O 7 ―Bi 2 O 3・
According to the 2TiO 2 -based dielectric ceramic composition for temperature compensation, the capacitance temperature coefficient is approximately -650×10 -6 /℃ ~ 1200×
The dielectric constant improves to approximately 160 to 180 in the range of 10 -6 /℃,
Moreover, since low-temperature sintering of 930 to 1050°C has become possible, when used in a multilayer ceramic capacitor, it has become possible to use low-melting point metals such as silver alloys for the internal electrodes. Therefore, compared to conventional high-temperature sintered materials, it consumes less thermal energy, has a significant effect on reducing maintenance costs for firing furnace materials, etc., and is extremely cost-effective from an energy-saving perspective. Since a dielectric ceramic composition for temperature compensation can be provided, there are great industrial benefits.
第1図は本発明に係る磁器組成物について
Pb2Nb2O7とBi2O2・2TiO2の組成比と、当該磁器
組成物の焼成温度、誘電率との関係を示すグラフ
であり、第2図は同じく上記組成比とQ値、静電
容量温度関係数との関係を示すグラフである。
Figure 1 shows the porcelain composition according to the present invention.
This is a graph showing the relationship between the composition ratio of Pb 2 Nb 2 O 7 and Bi 2 O 2 2TiO 2 and the firing temperature and dielectric constant of the ceramic composition. It is a graph showing the relationship between capacitance and temperature relationship coefficient.
Claims (1)
からなることを特徴とする温度補償用誘電体磁器
製造用粉末組成物。 2 前記組成分に対して、焼成時の還元防止用酸
化剤としてMnCO3を、鉱化剤としてLa、Ce、Sb
等の酸化物を添加含有することを特徴とする特許
請求の範囲第1項記載の温度補償用誘電体磁器製
造用粉末組成物。[Claims] 1. A dielectric material for temperature compensation characterized by having a composition in the range of 1 Pb 2 Nb 2 O 7 ...40.0 to 99.0 mol% Bi 2 O 3 2TiO 2 ...1.0 to 60.0 mol% Powder composition for porcelain production. 2 For the above composition, MnCO 3 was added as an oxidizing agent to prevent reduction during firing, and La, Ce, and Sb were added as mineralizing agents.
2. A powder composition for producing temperature-compensating dielectric ceramics according to claim 1, which additionally contains an oxide such as oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12277079A JPS5645866A (en) | 1979-09-25 | 1979-09-25 | Temperatureecompensating ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12277079A JPS5645866A (en) | 1979-09-25 | 1979-09-25 | Temperatureecompensating ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645866A JPS5645866A (en) | 1981-04-25 |
| JPS6341866B2 true JPS6341866B2 (en) | 1988-08-19 |
Family
ID=14844175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12277079A Granted JPS5645866A (en) | 1979-09-25 | 1979-09-25 | Temperatureecompensating ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645866A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232936A (en) * | 1983-06-17 | 1984-12-27 | Furukawa Electric Co Ltd:The | Production of base material for quartz optical fiber having large numerical aperture |
| US5004713A (en) * | 1989-07-05 | 1991-04-02 | Corning Incorporated | Frequency stable NPO ceramics |
-
1979
- 1979-09-25 JP JP12277079A patent/JPS5645866A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645866A (en) | 1981-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4753905A (en) | Dielectric ceramic composition | |
| JP2978580B2 (en) | High dielectric constant dielectric porcelain composition | |
| US4477581A (en) | High permittivity ceramic compositions | |
| US4661462A (en) | Dielectric ceramic composition | |
| JPS6128619B2 (en) | ||
| US4601989A (en) | Dielectric ceramic composition | |
| JPS6341866B2 (en) | ||
| JPS6128621B2 (en) | ||
| JPS6341867B2 (en) | ||
| JPS6128620B2 (en) | ||
| JPS6216481B2 (en) | ||
| JPS6121183B2 (en) | ||
| JPS6211444B2 (en) | ||
| JPS6217805B2 (en) | ||
| JPS6135144B2 (en) | ||
| JPS6227028B2 (en) | ||
| US4624935A (en) | Dielectric ceramic composition | |
| JPS6223406B2 (en) | ||
| JPS6211443B2 (en) | ||
| JPS6346925B2 (en) | ||
| JPH0536308A (en) | High permittivity dielectric ceramic composition | |
| JPS6216482B2 (en) | ||
| JPH04214070A (en) | Ram material composition for manufacturing porcelain having high dielectric constant | |
| JP3071452B2 (en) | Dielectric porcelain composition | |
| JPS6134206B2 (en) |