JPS6342872B2 - - Google Patents
Info
- Publication number
- JPS6342872B2 JPS6342872B2 JP56069872A JP6987281A JPS6342872B2 JP S6342872 B2 JPS6342872 B2 JP S6342872B2 JP 56069872 A JP56069872 A JP 56069872A JP 6987281 A JP6987281 A JP 6987281A JP S6342872 B2 JPS6342872 B2 JP S6342872B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- substrate
- inp
- ingaasp
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Weting (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
本発明は半導体発光装置の製造方法、特に、溝
の中に活性層を埋込んだダブルヘテロ構造埋込み
型の半導体レーザにおいて、この溝の方向とエツ
チング液を適宜選ぶことにより、この溝を狭くか
つ基板のほぼ垂直方向に断面矩形に形成する方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor light emitting device, particularly a double hetero structure buried semiconductor laser in which an active layer is buried in a groove, in which the direction of the groove and the etching solution are appropriately selected. The present invention relates to a method for forming this groove to be narrow and to have a rectangular cross section in a direction substantially perpendicular to the substrate.
本出願人は、InGaAsP系の半導体発光装置の
製造において、インジウム・燐（InP）基板の＜
011＞方向にストライプ状の溝を形成するについ
て、第１図ａの断面図に示される如く、（111）Ｂ
面をもつたＶ字型溝を形成する方法を開発した。 In the production of InGaAsP-based semiconductor light emitting devices, the applicant has
To form striped grooves in the 011> direction, as shown in the cross-sectional view of Figure 1a, (111)B
We have developed a method for forming V-shaped grooves with surfaces.
本願の発明者は、上記の技術に関連して実験を
更に進め、次の事実を確認した。すなわち、エツ
チング液として塩酸（HCl）対硝酸（HNO3）の
混液の比率を変えてInPの＜011＞方向にストラ
イプ状の溝を作つた場合、溝の断面形状は、
HCl：HNO3＝１：０のときは第１図のａに示す
溝が、HCl：HNO3＝３：２のときはｂに図示の
溝が得られた。 The inventor of the present application further conducted experiments related to the above technology and confirmed the following fact. In other words, when striped grooves are created in the <011> direction of InP by changing the ratio of a mixed solution of hydrochloric acid (HCl) and nitric acid (HNO 3 ) as an etching solution, the cross-sectional shape of the grooves is as follows.
When HCl:HNO 3 =1:0, the groove shown in a of FIG. 1 was obtained, and when HCl:HNO 3 =3:2, the groove shown in b was obtained.
ところで、横モードの安定化したしきい値の低
い半導体レーザを形成するためには、幅の狭い溝
の形成が不可欠の要素である。本願の発明者はか
かる点について実験を重ね、作成される溝はInP
基板面を（100）面にし、開口部の辺が＜011＞方
向に平行であり、溝を形成するエッチヤント（エ
ツチング液）はHClとHNO3を含み、その混合比
がほぼ等しいかHNO3が僅か多い比率のときに、
基板面にほぼ垂直に断面ほぼ矩形の溝が形成さ
れ、この溝は幅をきわめて狭く形成することが可
能であり、かかる溝の中に活性層が埋込まれた半
導体レーザは横モードが安定化しており、しきい
値電流も十分に低いことを確認した。 Incidentally, in order to form a semiconductor laser with a stabilized transverse mode and a low threshold, forming a narrow groove is an essential element. The inventor of the present application has repeatedly experimented with this point, and the grooves created are InP.
The substrate surface is (100) and the sides of the opening are parallel to the <011> direction . When the ratio is slightly higher,
A groove with an almost rectangular cross section is formed almost perpendicular to the substrate surface, and the width of this groove can be made extremely narrow, and a semiconductor laser with an active layer embedded in such a groove has a stabilized transverse mode. It was confirmed that the threshold current was sufficiently low.
以下、本発明の方法の実施例を添付図面を参照
して説明する。 Embodiments of the method of the present invention will be described below with reference to the accompanying drawings.
本願の発明者は、前記した実験において、InP
基板面を（100）面とし、溝の開口部の辺が＜011
＞方向に平行になるようにレジスト膜を通常の技
術によつてパターニングし、リソグラフイ技術に
よりHCl：HNO3＝２：３の混液を両液混合後２
〜３分の短時間内に用いてエツチングしたとこ
ろ、第１図ｃに示される如く、基板面のほぼ垂直
方向に断面ほぼ矩形の溝が形成されることを確認
した。しかも、この溝の幅は2μｍ以下と十分に
狭く形成しえた。 In the experiment described above, the inventor of the present application discovered that InP
The substrate surface is (100), and the side of the groove opening is <011
＞The resist film was patterned using a normal technique so that it was parallel to the direction, and a mixture of HCl:HNO 3 = 2:3 was mixed using lithography technique.
When etching was carried out within a short time of ~3 minutes, it was confirmed that a groove having a substantially rectangular cross section was formed in a direction substantially perpendicular to the substrate surface, as shown in FIG. 1c. Moreover, the width of this groove could be formed sufficiently narrow as 2 μm or less.
本発明の実施例においては、前記の如き断面ほ
ぼ矩形の溝内に活性層を埋め込むものであり、か
かる特徴をもつたInGaAsP系の半導体発光素子
の製造方法を次に第２図の断面を参照して説明す
る。 In an embodiment of the present invention, an active layer is embedded in a groove having a substantially rectangular cross section as described above.The method for manufacturing an InGaAsP semiconductor light emitting device having such characteristics will be described below with reference to the cross section of FIG. and explain.
ｎ型InP基板１上に、ｐ−InPの電流阻止層２
を通常の液相成長法で約1μｍの厚さに成長する。
電流阻止層２は、ｎ−InP基板１上に通常の技術
でｐ型不純物を拡散することによつて形成しても
よい。 A current blocking layer 2 of p-InP is formed on the n-type InP substrate 1.
is grown to a thickness of approximately 1 μm using a conventional liquid phase growth method.
The current blocking layer 2 may be formed by diffusing p-type impurities onto the n-InP substrate 1 using a conventional technique.
次に、電流阻止層２上に二酸化シリコン
（SiO2）膜７を形成し、それを第１図ｃに示す如
くパターニングし、それをマスクとして用いる。
HClとHNO3を２：３の比率で混合し、混合後２
〜３分の短時間内にそれをエツチヤントとして用
いて電流阻止層から基板内部に向けてエツチング
したところ、サイドエツチングはごく僅かで、か
つ上方よりも下方がやや広い断面ほぼ矩形の溝８
が規格化された面方位以外の面を露出し基板面の
ほぼ垂直方向に形成された。ここで、基板面は
（100）面にとり、また溝の開口部の辺は＜011＞
方向となるようにSiO2膜７をパターニングしな
ければならない。 Next, a silicon dioxide (SiO 2 ) film 7 is formed on the current blocking layer 2, patterned as shown in FIG. 1c, and used as a mask.
Mix HCl and HNO 3 in a ratio of 2:3, and after mixing 2
When etching was carried out from the current blocking layer toward the inside of the substrate using this as an etchant within a short period of ~3 minutes, there was very little side etching, and a groove 8 with an almost rectangular cross section that was slightly wider at the bottom than at the top was formed.
was formed in a direction substantially perpendicular to the substrate surface, exposing a surface other than the standardized surface orientation. Here, the substrate surface is the (100) plane, and the sides of the groove opening are <011>
The SiO 2 film 7 must be patterned in the same direction.
引続き、液相成長法で、ｎ−InP層３を平担部
で約0.5μｍの厚さになるよう成長する。このと
き、溝８の中にはｎ−InP層３が約1μｍの厚さに
成長する。 Subsequently, an n-InP layer 3 is grown to a thickness of about 0.5 μm on the flat portion by a liquid phase growth method. At this time, the n-InP layer 3 grows in the groove 8 to a thickness of about 1 μm.
更に、InGaAsPの活性層４を、溝８内で厚さ
が最も厚い部分で約0.15μｍになるよう成長する。
平担部のInGaAsP層の厚さは約0.05μｍである。 Furthermore, an active layer 4 of InGaAsP is grown within the groove 8 so that the thickness thereof is approximately 0.15 μm at the thickest portion.
The thickness of the InGaAsP layer in the flat part is approximately 0.05 μm.
この次に、ｐ−InPのクラツド層５を、溝８内
に成長した部分が約1.5μｍの厚さになるよう成長
する。続いて、ｐ−InGaAsPのキヤツプ層６を
0.3〜0.5μｍの厚さに形成する。得られた素子は、
典型的なInP基板の溝の中にダブルヘテロ構造を
埋込んだ型のInGaAsP系の半導体レーザである。 Next, a p-InP cladding layer 5 is grown to a thickness of approximately 1.5 .mu.m in the portion grown within the trench 8. Next, a cap layer 6 of p-InGaAsP is formed.
Form to a thickness of 0.3 to 0.5 μm. The obtained element is
This is an InGaAsP semiconductor laser with a double heterostructure embedded in a typical InP substrate groove.
以上に説明した方法によつて、ストライプ幅約
1.5μｍの半導体レーザが得られ、そのしきい値電
流は12〜20ｍＡの低い値のものであつた。 By the method described above, the stripe width is approx.
A 1.5 μm semiconductor laser was obtained, and its threshold current was as low as 12 to 20 mA.
上記において、HCl：HNO3＝２：３とした
が、その比率は１：１〜２：３の範囲内におくこ
と、すなわち、HClをHNO3と等量か若干少なく
することによつて所望形状の溝が形成された。 In the above, HCl:HNO 3 = 2:3, but the ratio should be within the range of 1:1 to 2:3, that is, by using HCl in an equal amount or slightly less than HNO 3 , the desired amount can be achieved. A shaped groove was formed.
なお、以上の説明においては、狭い幅の断面ほ
ぼ矩形の溝の形成にはHClとHNO3の混液による
エツチング法を用いたが、本発明の適用範囲はか
かるエツチヤントを用いる場合に限定されるもの
ではない。要は、（100）の基板面に、＜011＞方向
の溝を、基板面のほぼ垂直方向に断面ほぼ矩形に
形成することにより、比較的容易に断面略矩形の
溝の形成が行なえるところにある。従つて、本発
明の他の実施例としてイオンミリング等のエツチ
ング方法により上記所定の形状を有する溝の形成
が可能である。 In the above explanation, an etching method using a mixed solution of HCl and HNO 3 was used to form narrow grooves with a substantially rectangular cross section, but the scope of application of the present invention is limited to the use of such an etchant. isn't it. The point is that by forming a groove in the <011> direction on the (100) substrate surface with a substantially rectangular cross section in a direction substantially perpendicular to the substrate surface, a groove with a substantially rectangular cross section can be formed relatively easily. It is in. Therefore, as another embodiment of the present invention, it is possible to form a groove having the above-mentioned predetermined shape by an etching method such as ion milling.
かくして、本発明の方法によるときは、横モー
ドの安定化したしきい値電流値の低い半導体レー
ザが得られるのである。 Thus, when using the method of the present invention, a semiconductor laser with a stabilized transverse mode and a low threshold current value can be obtained.
第１図はHBlとHNO3の混液の比率を変えて
InP基板の＜011＞方向にストライプ状の溝を形
成した場合の溝の形状を示す断面図、第２図は本
発明の方法によつて得られるInGaAsP系の半導
体発光素子の断面図である。
１……nInP基板、２……pInPの電流阻止層、
３……nInP層、４……InGaAsPの活性層、５…
…pInPのクラツド層、６……ｐ−InGaAsPのキ
ヤツプ層、７……SiO2膜、８……溝。
Figure 1 shows the results obtained by changing the ratio of the mixture of HBl and HNO 3 .
FIG. 2 is a cross-sectional view showing the shape of striped grooves formed in the <011> direction of an InP substrate, and FIG. 2 is a cross-sectional view of an InGaAsP semiconductor light emitting device obtained by the method of the present invention. 1... nInP substrate, 2... pInP current blocking layer,
3... nInP layer, 4... InGaAsP active layer, 5...
... pInP cladding layer, 6 ... p-InGaAsP cap layer, 7 ... SiO 2 film, 8 ... groove.
Claims (1)
込んだ型のInGaAsP系半導体レーザの製造方法
において、塩酸と硝酸を１：１ないし２：３の比
率で混合したエツチング液を用いるエツチングに
より、InP基板は（100）面を主表面とし、溝の
開口部の辺は＜011＞方向に平行にとり、該溝を
基板面にほぼ垂直に、かつ、断面矩形に形成する
ことを特徴とする半導体発光装置の製造方法。1 In a method for manufacturing an InGaAsP semiconductor laser in which a double heterostructure is embedded in a groove in a semiconductor substrate, InP is etched by etching using an etching solution containing a mixture of hydrochloric acid and nitric acid at a ratio of 1:1 to 2:3 A semiconductor light emitting device characterized in that the main surface of the substrate is the (100) plane, the sides of the opening of the groove are parallel to the <011> direction, and the groove is formed almost perpendicular to the substrate surface and with a rectangular cross section. Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6987281A JPS57184277A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor light emission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6987281A JPS57184277A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor light emission device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57184277A JPS57184277A (en) | 1982-11-12 |
| JPS6342872B2 true JPS6342872B2 (en) | 1988-08-25 |
Family
ID=13415307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6987281A Granted JPS57184277A (en) | 1981-05-08 | 1981-05-08 | Manufacture of semiconductor light emission device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57184277A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6608352B2 (en) * | 2016-12-20 | 2019-11-20 | Ｄｏｗａエレクトロニクス株式会社 | Semiconductor light emitting device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121693A (en) * | 1979-03-15 | 1980-09-18 | Tokyo Inst Of Technol | Manufacture of band-like semiconductor laser by selective melt-back process |
-
1981
- 1981-05-08 JP JP6987281A patent/JPS57184277A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57184277A (en) | 1982-11-12 |
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