JPS6344681B2 - - Google Patents
Info
- Publication number
- JPS6344681B2 JPS6344681B2 JP55060284A JP6028480A JPS6344681B2 JP S6344681 B2 JPS6344681 B2 JP S6344681B2 JP 55060284 A JP55060284 A JP 55060284A JP 6028480 A JP6028480 A JP 6028480A JP S6344681 B2 JPS6344681 B2 JP S6344681B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- deposit
- metal
- metal compound
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002736 metal compounds Chemical class 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000007751 thermal spraying Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012255 powdered metal Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000009718 spray deposition Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 nitride compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】
この発明は、プラズマによつて粉末、ワイヤ、
棒状等の金属原料を反応ガス中で溶融霧化しつつ
溶射することによつて、金属化合物材を得る方法
に関する。DETAILED DESCRIPTION OF THE INVENTION This invention provides powder, wire, and
The present invention relates to a method of obtaining a metal compound material by thermal spraying a rod-shaped metal raw material while melting and atomizing it in a reaction gas.
各種金属の窒化物（AlN、Si3N4、HfN、
ZrN、TiN）、酸化物（Al2O3、HfO2、ZrO2、
ThO2）、ホウ化物（TiB2、ZrB2、HfB2）、炭化
物（HfC、TaC、WC）等、特に周期律表第〜
第族をベースにしたこれら化合物による耐火材
は耐熱、耐食、高硬度等優れた特徴を示すが、一
般に従来の耐火物の製造法では得難いものが多
く、抵抗炉による焼結方式では純度や結晶性が悪
い。一方、プラズマによる直接生成の方法も知ら
れているが、一般に粉末のまま回収するため純度
も歩留りも悪い。このため、真空アーク溶解炉や
電子ビーム溶解炉にみられる積層凝固引抜式の連
続鋳塊製造技術を応用したプラズマ溶射により金
属化合物材を得る方法（特公昭54−16480）が考
えられた。すなわち、この方法は第１図に示すよ
うに、プラズマの流れの中で反応しつつある金属
溶滴を引抜き式の堆積物受台１５上に強制的に付
着固定させることにより、反応を促進させ金属化
合物を次第に堆積して生長されると共に、付着面
の位置を一定にすべく堆積物受台１５を下方に下
げることにより、純度や結晶性の良い付着堆積物
の塊を得るという方法であつた。しかし、この方
法では、付着堆積する金属化合物が高温でも電気
的に絶縁性の高い物質（AlN、Si3N4）を生成す
る場合、プラズマの対極となる堆積物受台１５が
付着堆積する生成物材によつて絶縁体となるた
め、安定したプラズマアークが得られなくなるば
かりでなく、純度や結晶性の良い物質が得られ
ず、又、プラズマが消弧した際には堆積した絶縁
性物質のため、再点弧が困難となる等の欠点があ
つた。 Various metal nitrides (AlN, Si 3 N 4 , HfN,
ZrN, TiN), oxides (Al 2 O 3 , HfO 2 , ZrO 2 ,
ThO 2 ), borides (TiB 2 , ZrB 2 , HfB 2 ), carbides (HfC, TaC, WC), etc., especially in the periodic table ~
Refractories made from these group-based compounds exhibit excellent characteristics such as heat resistance, corrosion resistance, and high hardness. Bad sex. On the other hand, a method of direct generation using plasma is also known, but it is generally recovered as a powder, resulting in poor purity and yield. For this reason, a method of obtaining metal compound materials by plasma spraying (Japanese Patent Publication No. 16480/1989) was devised, which applied the layered solidification and drawing continuous ingot production technology found in vacuum arc melting furnaces and electron beam melting furnaces. That is, as shown in FIG. 1, this method accelerates the reaction by forcefully adhering and fixing the metal droplets reacting in the plasma flow onto the pull-out deposit holder 15. This is a method in which a metal compound is gradually deposited and grown, and a mass of deposited deposits with good purity and crystallinity is obtained by lowering the deposit holder 15 downward to keep the position of the deposited surface constant. Ta. However, in this method, if the metal compound to be deposited produces a substance (AlN, Si 3 N 4 ) that is highly electrically insulating even at high temperatures, the deposit pedestal 15, which is the opposite electrode of the plasma, Some materials act as insulators, which not only makes it impossible to obtain a stable plasma arc, but also makes it impossible to obtain substances with good purity and crystallinity, and when the plasma is extinguished, the deposited insulating material Therefore, there were drawbacks such as difficulty in re-ignition.
この発明は上記の欠点を解消し、絶縁性の高い
物質の生成においても、純度や結晶性の良い物質
が得られることを特徴とするプラズマ溶射により
金属化合物材を得る方法の提供を目的とする。 The purpose of the present invention is to eliminate the above-mentioned drawbacks and provide a method for obtaining a metal compound material by plasma spraying, which is characterized in that even when producing a highly insulating material, a material with good purity and crystallinity can be obtained. .
この発明の要旨は、金属化合物を作るべきガス
雰囲気中で比較的噴出孔の小さいノズルをもつた
プラズマトーチを使用し、プラズマへの供給電力
とプラズマガスの流量の調整により、プラズマの
高温と高速のアークジエツトによつて原料を溶融
すると共に同時に噴霧化して、直接反応ガスとの
間に金属化合物の生成反応を生じさせつつ、回転
する冷却された堆積物受台上に溶射付着させ、湯
だまりを形成することなく堆積させ、更に反応を
促進させて堆積物受台の回転により、生成物の純
度や結晶性を一定にして反応が完了した時点で、
例えば金属ブラシ等で払い落し、粉末のまま又は
比較的多孔質の輪片状の金属化合物を回収するも
のである。これは例えば、Al粉末をN2ガスと共
に供給して、プラズマアークジエツトで溶滴とな
つた時はすでに窒化合物の形成が始まり、この状
態で堆積物受台上にAlNとして溶射され、原料
のAlによる湯だまりを形成することなく、表面
のみ追加の加熱を受けて更にここで反応が促進さ
れ、Al粉末の連続供給により遂次良好なAlNが
強固に結合しながら堆積されていく。この堆積さ
れたAlNは、堆積物受台の回転により、溶射付
着位置から移動し、反応の完了後、金属ブラシあ
るいは高圧ガスの吹き付けにより払い落され回収
されるものである。 The gist of this invention is to use a plasma torch with a relatively small nozzle in a gas atmosphere in which a metal compound is to be produced, and to adjust the power supply to the plasma and the flow rate of the plasma gas to generate high-temperature and high-speed plasma. The raw material is melted and atomized by an arc jet at the same time, causing a direct reaction with the reaction gas to form a metal compound, and depositing it on a rotating, cooled deposit table, forming a pool of molten metal. When the product is deposited without formation, the reaction is further accelerated, and the purity and crystallinity of the product are kept constant by rotating the deposit pedestal, and the reaction is completed.
For example, the metal compound is brushed off with a metal brush or the like to collect the metal compound in powder form or in the form of a relatively porous ring. For example, when Al powder is supplied together with N 2 gas and turned into droplets by a plasma arc jet, the formation of nitride compounds has already begun, and in this state, it is thermally sprayed onto the deposit pedestal as AlN, and the raw material is Without forming a puddle of Al, only the surface is subjected to additional heating to further accelerate the reaction, and the continuous supply of Al powder gradually deposits good AlN while firmly bonding. The deposited AlN is moved from the thermal spray deposition position by the rotation of the deposit pedestal, and after the reaction is completed, it is brushed off and recovered by a metal brush or high-pressure gas spray.
この発明で使用される金属原料は、粉末ならば
粒径が数10μ、ワイヤ状ならば線径数mm、棒状な
らば直径20mm程度が望ましい。プラズマガスは金
属原料と反応すべき反応ガスを使用するが、Ar
等の不活性ガスや反応ガスとの混合物でも良く、
特に放電を開始する時やトーチの消耗が問題とな
る時は不活性ガスを使用する。堆積物受台は銅製
が好ましく、回転可能な機構とし、円筒、円板、
円錐あるいは円錐台等の形状が可能である。更
に、堆積物受台は、プラズマ電流が通じても溶損
しないよう冷却（水冷）する。密閉室は水冷構造
とする。 The metal raw material used in this invention preferably has a particle size of several tens of microns if it is a powder, several mm in diameter if it is in the form of a wire, and approximately 20 mm in diameter if it is in the form of a rod. Plasma gas uses a reactive gas to react with metal raw materials, but Ar
Mixtures with inert gases or reactive gases such as
Use an inert gas, especially when starting the discharge or when torch wear is a problem. The deposit holder is preferably made of copper, has a rotatable mechanism, and has a cylindrical, disc, or
Shapes such as a cone or a truncated cone are possible. Furthermore, the deposit pedestal is cooled (water-cooled) so that it will not be damaged by melting even if a plasma current is passed through it. The closed room will have a water-cooled structure.
この発明を図面に基づいて説明すると、第２図
に示すプラズマ発生装置は、特に粉末状金属原料
を使用するのに適し、Al粉末やＷ粉末を窒化あ
るいは炭化する装置として役立ち、上方に金属原
料導入口３、その外側にプラズマガス導入口２を
有し、音速と同程度の高速のプラズマ流を噴出す
べく、金属の溶解用として使用されるものよりか
なり狭い噴出孔６を有する水冷ノズル５、陰極１
からなる水冷プラズマトーチ４を備え、水冷密閉
室７を隔てその下方に内部を水冷管９により水冷
された回転式の円筒状の堆積物受台８が設けられ
ている。この堆積物受台８の下面には、堆積物受
台８の軸方向に対して平行で、堆積物受台面８′
に垂直に振動式の金属ブラシ１０が設けられてお
り、金属ブラシ１０の下方には堆積物受箱が設け
られている。１２は主電源を示し、プラズマトー
チ４の陰極１と堆積物受台８は電気的に接続され
ている。 To explain this invention based on the drawings, the plasma generating device shown in FIG. 2 is particularly suitable for using powdered metal raw materials, and is useful as a device for nitriding or carbonizing Al powder or W powder. A water-cooled nozzle 5 which has an inlet 3, a plasma gas inlet 2 on the outside thereof, and an ejection hole 6 which is considerably narrower than that used for melting metals in order to eject a high-speed plasma flow comparable to the speed of sound. , cathode 1
A rotary cylindrical deposit holder 8 whose interior is water-cooled by a water-cooled pipe 9 is provided below the water-cooled sealed chamber 7. On the lower surface of this deposit pedestal 8, a deposit pedestal surface 8' is provided which is parallel to the axial direction of the deposit pedestal 8.
A vibrating metal brush 10 is provided perpendicularly to the metal brush 10, and a deposit receiving box is provided below the metal brush 10. Reference numeral 12 indicates a main power source, and the cathode 1 of the plasma torch 4 and the deposit holder 8 are electrically connected.
第４図はこの発明における堆積物受台８の他の
実施例を示し、堆積物受台８にフランジ部１３を
設けたものである。すなわち、内部の水冷管９に
より水冷された回転式の円筒状堆積物受台８の中
央に、金属化合物が堆積する部分を囲い内側に傾
斜したフランジ部１３を設けたものである。堆積
物受台８の下面には、堆積物受台面８′、フラン
ジ部１３の傾斜面に沿つて金属ブラシ１０が振動
可能に設けられている。 FIG. 4 shows another embodiment of the deposit holder 8 according to the present invention, in which the deposit holder 8 is provided with a flange portion 13. That is, a rotary cylindrical deposit receiving table 8, which is water-cooled by an internal water-cooling pipe 9, is provided with a flange portion 13 in the center thereof, which surrounds the portion where the metal compound is deposited and is inclined inward. A metal brush 10 is provided on the lower surface of the deposit receiver 8 so as to be able to vibrate along the deposit receiver surface 8' and the inclined surface of the flange portion 13.
第５図はこの発明における堆積物受台８の他の
実施例を示し、堆積物受台８を中央で２分割８
ａ，８ｂしたものである。 FIG. 5 shows another embodiment of the deposit pedestal 8 according to the present invention, in which the deposit pedestal 8 is divided into two at the center.
a, 8b.
次にこの発明の実施方法を説明する。 Next, a method of implementing the invention will be explained.
プラズマガス導入口２からプラズマガスを水冷
密閉室７内に流し、例えば第２図に示す高周波発
生装置１８による周知の高周波放電により陰極１
と水冷ノズル５の間にパイロツトアークを発生さ
せる。次にパイロツトアークを堆積物受台８上に
移行発生させ、プラズマアーク１９を発生させ
る。水冷密閉室７内に反応ガスを入れ、反応生成
物が強固に付着できるように堆積物受台８を約
100℃に加熱した後、反応ガスと共に、金属原料
を金属原料導入口３より供給する。 Plasma gas is flowed into the water-cooled sealed chamber 7 from the plasma gas inlet 2, and the cathode 1 is generated by a well-known high-frequency discharge by a high-frequency generator 18 shown in FIG.
A pilot arc is generated between the water-cooled nozzle 5 and the water-cooled nozzle 5. Next, a pilot arc is transferred onto the deposit pedestal 8 and a plasma arc 19 is generated. The reaction gas is introduced into the water-cooled sealed chamber 7, and the deposit pedestal 8 is placed approximately so that the reaction products can firmly adhere to it.
After heating to 100°C, the metal raw material is supplied from the metal raw material inlet 3 together with the reaction gas.
5000℃以上のプラズマアーク中に供給された金
属原料はプラズマへの供給電力とプラズマの流量
増加により噴霧化され、微細な溶滴となつて反応
ガスとの直接反応が進むと共に、プラズマの噴出
力により、金属化合物の溶滴が堆積物受台面８′
に溶射される。溶射された金属化合物はさらにプ
ラズマの加熱を受けて反応が促進される。このと
き、プラズマへの電力供給とプラズマガスの供給
量を金属原料の微細化と同時に、金属溶解炉にみ
られるような、重力による単なる落下ではなく、
プラズマの噴出力によりこの微細な金属化合物を
溶射面に強制的に衝突させ、更に溶射面で金属原
料又は金属化合物の湯だまりを形成しないよう
に、プラズマへの電力供給とプラズマガスの供給
量を溶射位置と共に調整する。金属原料の連続供
給によつて、金属化合物は次第に層を形成し強固
に結合し堆積する。この堆積した金属化合物は、
堆積物受台８の回転により溶射付着位置から移行
し、反応を完了し下面に至る。下面に設けられた
金属ブラシ１０は振動しており、この堆積した金
属化合物を堆積物受台８より払い落とし、金属化
合物は下方に設けられた堆積物受箱１１に落下す
る。 The metal raw material supplied into the plasma arc at a temperature of 5000°C or higher is atomized by the power supplied to the plasma and the increase in plasma flow rate, and becomes fine droplets that undergo a direct reaction with the reaction gas, and the ejection force of the plasma increases. As a result, droplets of the metal compound are deposited on the deposit receiving surface 8'.
is thermally sprayed. The sprayed metal compound is further heated by plasma to accelerate its reaction. At this time, the power supply to the plasma and the amount of plasma gas supplied can be made finer at the same time as the metal raw material, rather than simply falling due to gravity as seen in metal melting furnaces.
The power supply to the plasma and the amount of plasma gas supplied must be controlled to force these fine metal compounds to collide with the sprayed surface using the ejection force of the plasma, and to prevent the formation of pools of metal raw materials or metal compounds on the sprayed surface. Adjust along with the spraying position. By continuously supplying the metal raw material, the metal compound gradually forms a layer and is firmly bonded and deposited. This deposited metal compound is
The rotation of the deposit pedestal 8 moves it from the thermal spray deposition position, completes the reaction, and reaches the lower surface. The metal brush 10 provided on the lower surface is vibrating and brushes off the deposited metal compound from the deposit receiver 8, and the metal compound falls into the deposit receiver 11 provided below.
上記のような方法によれば、結晶性の良好な金
属化合物が短時間で得られ、堆積後の加熱による
反応が加わるため、プラズマ中における反応ゾー
ンの空間が小さくできるので装置を小さくするこ
とが可能になり、堆積後の反応促進により、さら
に反応の進んだ結晶性の良い金属化合物が得られ
る。又、従来の引抜き式の堆積物受台１５に較
べ、堆積位置を監視し、堆積位置を一定に保つよ
う調整する必要がなく、水冷ノズル５と堆積物受
台８との距離が一定であるため、金属化合物の純
度や結晶性が一定に保たれる。溶射面に堆積した
金属化合物は、堆積物受台８の回転により下面に
移行し、下面で金属ブラシ１０により払い落とさ
れ、溶射面には堆積物の払い落とされた堆積物受
台面８′が移行するので、AlN、Si3N4等の絶縁
性の高い物質の生成を行なつても、プラズマアー
クが不安定になつたり、プラズマが消弧した際の
再点弧も容易にできる。 According to the method described above, a metal compound with good crystallinity can be obtained in a short period of time, and since the reaction is caused by heating after deposition, the space of the reaction zone in the plasma can be reduced, and the equipment can be made smaller. By promoting the reaction after deposition, a metal compound with further reaction and good crystallinity can be obtained. Furthermore, compared to the conventional pull-out type deposit holder 15, there is no need to monitor the deposition position and adjust it to keep it constant, and the distance between the water cooling nozzle 5 and the deposit holder 8 is constant. Therefore, the purity and crystallinity of the metal compound can be maintained constant. The metal compound deposited on the sprayed surface is transferred to the lower surface by the rotation of the deposit holder 8, and is brushed off by the metal brush 10 on the lower surface, and the deposit holder surface 8' from which the deposits have been brushed off is left on the sprayed surface. Therefore, even if a highly insulating material such as AlN or Si 3 N 4 is generated, the plasma arc becomes unstable and it is easy to re-ignite the plasma when it is extinguished.
第４図のように堆積物受台８にフランジ部１３
を設けたことにより、金属化合物が更に歩留り良
く回収され、第５図のように堆積物受台８を中央
で分割することにより、プラズマの高熱のため堆
積物受台８が変形することを防止できる。 As shown in FIG.
By providing this, metal compounds can be recovered with a higher yield, and by dividing the deposit pedestal 8 in the center as shown in Fig. 5, deformation of the deposit pedestal 8 due to the high heat of the plasma can be prevented. can.
尚、上記の実施例では、粉末状の金属原料に適
しているプラズマ発生装置、円筒状の堆積物受
台、金属ブラシ等を用いたが、他のプラズマ発生
装置や円板、円錐、円錐台状の堆積物受台、ある
いは高圧ガスにより金属化合物を払い落とす装置
を用いても同様の作用が得られる。 In the above example, a plasma generator suitable for powdered metal raw materials, a cylindrical deposit pedestal, a metal brush, etc. were used, but other plasma generators, disks, cones, truncated cones, etc. A similar effect can be obtained by using a type of deposit receiver or a device that uses high-pressure gas to blow off metal compounds.
以上説明したように、この発明は、プラズマに
よつて粉末、ワイヤ、棒状等の金属原料を反応ガ
ス中で溶融霧化しつつ溶射することによつて金属
化合物を堆積物として得る方法において、堆積物
受台を回転式にすることにより、金属化合物の純
度や結晶が一定に保たれ、純度や結晶性も向上
し、絶縁性の高い物質の生成にも、安定したプラ
ズマアークが得られ、純度や結晶性の乱れや低下
が防止できる等の効果がある。 As explained above, the present invention provides a method for obtaining a metal compound as a deposit by spraying a metal raw material such as a powder, wire, rod, etc. in a reactive gas while melting and atomizing it using plasma. By making the pedestal rotatable, the purity and crystallinity of the metal compound can be maintained constant, and the purity and crystallinity can also be improved.A stable plasma arc can be obtained even when producing highly insulating substances, and the purity and crystallinity can be improved. This has the effect of preventing disorder or deterioration of crystallinity.
第１図は従来の引抜き式のプラズマ溶射による
金属化合物生成装置の断面図、第２図はこの発明
の実施例を示すプラズマ溶射による金属化合物生
成装置の断面図、第３図は第２図のＡ―Ａ断面
図、第４図、第５図は堆積物受台の他の実施例を
示す同装置の断面図である。
１…陰極、２…プラズマガス導入口、３…金属
原料導入口、４…プラズマトーチ、５…水冷ノズ
ル、８…堆積物受台、１０…金属ブラシ、１１…
堆積物受箱、１９…プラズマアーク。
FIG. 1 is a sectional view of a conventional pull-out type plasma spraying metal compound generation device, FIG. 2 is a sectional view of a plasma spraying metal compound generation device showing an embodiment of the present invention, and FIG. 3 is the same as in FIG. AA sectional view, FIGS. 4 and 5 are sectional views of the same apparatus showing other embodiments of the deposit receiving table. DESCRIPTION OF SYMBOLS 1... Cathode, 2... Plasma gas inlet, 3... Metal raw material inlet, 4... Plasma torch, 5... Water cooling nozzle, 8... Deposit pedestal, 10... Metal brush, 11...
Sediment receiving box, 19...Plasma arc.
Claims (1)
マアーク１９を発生させ、該プラズマアーク１９
中に金属原料を供給して、該金属原料を溶融噴霧
しながら反応ガスとの間に金属化合物の直接生成
反応を生じさせ、該金属化合物を下方に設けた冷
却された回転する前記堆積物受台８上に溶射付着
させ、該堆積物受台８上で反応を持続させながら
回転移動させ、その反応が完了した時点で金属化
合物を払い落とすことを特徴とするプラズマ溶射
により金属化合物材を得る方法。1 Generate a plasma arc 19 between the plasma torch 4 and the deposit pedestal 8, and
A metal raw material is supplied into the cooling and rotating deposit receiver provided below, and a direct production reaction of a metal compound is caused between the metal raw material and the reaction gas while being melted and sprayed. A metal compound material is obtained by plasma spraying, which is characterized in that the metal compound is deposited on a table 8 by thermal spraying, rotated while continuing the reaction on the deposit holder 8, and the metal compound is brushed off when the reaction is completed. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6028480A JPS56155640A (en) | 1980-05-06 | 1980-05-06 | Plasma spray process for obtaining metal compound material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6028480A JPS56155640A (en) | 1980-05-06 | 1980-05-06 | Plasma spray process for obtaining metal compound material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56155640A JPS56155640A (en) | 1981-12-01 |
| JPS6344681B2 true JPS6344681B2 (en) | 1988-09-06 |
Family
ID=13137687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6028480A Granted JPS56155640A (en) | 1980-05-06 | 1980-05-06 | Plasma spray process for obtaining metal compound material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56155640A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148311A (en) * | 1985-12-19 | 1987-07-02 | Chugai Ro Kogyo Kaisha Ltd | Process and device for preparing aluminum nitride powder |
| JPS62148310A (en) * | 1985-12-20 | 1987-07-02 | Yoshio Yamazaki | Preparation of aluminum nitride |
| JP2009531258A (en) * | 2006-03-29 | 2009-09-03 | ノースウエスト メテック コーポレイション | Method and apparatus for producing nano and micro powders using axial injection plasma spraying |
-
1980
- 1980-05-06 JP JP6028480A patent/JPS56155640A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56155640A (en) | 1981-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2938552B2 (en) | Coating film manufacturing method and coating film manufacturing apparatus | |
| US5733662A (en) | Method for depositing a coating onto a substrate by means of thermal spraying and an apparatus for carrying out said method | |
| JP6337354B2 (en) | Fine particle production apparatus and fine particle production method | |
| CN112246184B (en) | Method and apparatus for producing powder particles by atomizing raw materials in the form of elongated parts | |
| US6099696A (en) | Conversion of carbon or carbon-containing compounds in a plasma | |
| JP2959842B2 (en) | High speed arc spraying apparatus and spraying method | |
| JP2593405B2 (en) | Torch equipment for chemical processes | |
| JP2004518027A (en) | Method for producing functional layer by inductively coupled radio frequency plasma beam source | |
| GB2228428A (en) | Laser plasma spraying | |
| US5939151A (en) | Method and apparatus for reactive plasma atomization | |
| US4639567A (en) | Method and apparatus for melting rod-shaped material with an induction coil | |
| JPS6344681B2 (en) | ||
| JPH062882B2 (en) | Particle production equipment | |
| JPS63227766A (en) | Method of forming ultrafine particle film | |
| US5136609A (en) | Method of producing finely divided particles or powder, vapor or fine droplets, and apparatus therefor | |
| JP6551851B2 (en) | Microparticle manufacturing apparatus and microparticle manufacturing method | |
| JPH0641618A (en) | Method and apparatus for continuously producing active metal powder | |
| JPH0674199B2 (en) | Diamond synthesis method | |
| Henne | Thermal plasmas for material processing | |
| JPH0726362A (en) | Film forming method, film forming plasma torch, and plasma arc oscillating device for the torch | |
| JPH0790556A (en) | High frequency induction plasma deposition system | |
| JPH0688203A (en) | Plasma thermal spraying torch | |
| JPH0667797B2 (en) | Diamond synthesis method | |
| JPH07101798A (en) | Production of diamond film and device therefor | |
| JPH046282A (en) | Composite material and production thereof |