JPS6345465B2 - - Google Patents
Info
- Publication number
- JPS6345465B2 JPS6345465B2 JP7003685A JP7003685A JPS6345465B2 JP S6345465 B2 JPS6345465 B2 JP S6345465B2 JP 7003685 A JP7003685 A JP 7003685A JP 7003685 A JP7003685 A JP 7003685A JP S6345465 B2 JPS6345465 B2 JP S6345465B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- amorphous
- gas
- high frequency
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- -1 benzene Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0006—Controlling or regulating processes
- B01J19/002—Avoiding undesirable reactions or side-effects, e.g. avoiding explosions, or improving the yield by suppressing side-reactions
- B01J19/0026—Avoiding carbon deposits
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はアモルフアス炭素薄膜（以下アモルフ
アス−Ｃと記す）のエツチング方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for etching an amorphous carbon thin film (hereinafter referred to as amorphous-C).
（従来の技術）
アモルフアス−Ｃは、アセチレンガス、エチレ
ンガス、プロパンガスなどの炭化水素化合物ガス
或いはベンゼンなどの液状炭化水素化合物の、グ
ロー放電分解によつて作製でき、化学的に安定で
耐酸性や耐アルカリ性に優れ、硬度も大きい。ま
た、作製条件によつて各種の物性を変化させるこ
とができるので、多方面に応用できる可能性があ
る。(Prior art) Amorphous-C can be produced by glow discharge decomposition of hydrocarbon compound gases such as acetylene gas, ethylene gas, propane gas, or liquid hydrocarbon compounds such as benzene, and is chemically stable and acid-resistant. It has excellent alkali resistance and high hardness. Furthermore, since various physical properties can be changed depending on the manufacturing conditions, it has the potential to be applied in many fields.
例えば、光学的エネルギーバンドギヤツプとし
て約0.4eVから3.0eVのものを得ることができ、
感光ドラムの光透過性表面保護として或いは液晶
表示装置のトランジスタ部遮光膜として採用する
ことができる。 For example, an optical energy band gap of about 0.4eV to 3.0eV can be obtained,
It can be used as a light-transmitting surface protection for a photosensitive drum or as a light-shielding film for a transistor portion of a liquid crystal display device.
（発明が解決しようとする問題点）
前者のような場合には、エツチングは必要ない
が、後者の場合には、トランジスタ部のみを遮光
するためにパターン化する必要がある。従つて、
本発明の目的は、アモルフアス−Ｃのドライエツ
チング法を提供することにある。(Problems to be Solved by the Invention) In the former case, etching is not necessary, but in the latter case, it is necessary to pattern only the transistor portion to shield it from light. Therefore,
An object of the present invention is to provide a method for dry etching amorphous-C.
（問題点を解決するための手段）
本発明はH2ガスのグロー放電によつてエツチ
ングするものであり、換言すればプラズマエツチ
ングの反応ガスとしてH2ガスを用いたものであ
る。(Means for Solving the Problems) The present invention performs etching by glow discharge of H 2 gas, in other words, uses H 2 gas as a reactive gas for plasma etching.
（作 用）
本発明では、光学的バンドキヤツプ或いはアモ
ルフアス−Ｃ中のＨ濃度が小さい程、エツチング
レートは小さくなるが、光学的バンドキヤツプが
0.8eVのものでも、１Å／sec〜数Å／secのエツ
チングレートは達成できる。(Function) In the present invention, the etching rate decreases as the H concentration in the optical bandcap or amorphous-C decreases.
Even with 0.8 eV, an etching rate of 1 Å/sec to several Å/sec can be achieved.
また、半導体デバイスの構成要素として用いら
れる普通の物質、例えば単結晶Si、多結晶Si、
SiO2、Si3N4、SiOx、SiNx、SiNxOy、リンガス
およびボロンガラスなどはH2ガスプラズマでは
殆んどエツチングされないので、エツチング時間
管理が極めて簡易である。 In addition, common materials used as components of semiconductor devices, such as single crystal Si, polycrystalline Si,
SiO 2 , Si 3 N 4 , SiO x , SiN x , SiN x O y , phosphorous gas, boron glass, and the like are hardly etched by H 2 gas plasma, so etching time management is extremely simple.
（実施例）
第２図はアモルフアス−Ｃの作成及びエツチン
グに用いたプラズマ装置の概略図である。(Example) FIG. 2 is a schematic diagram of a plasma apparatus used for producing and etching amorphous-C.
第２図において、１はH2ガスで20％に希釈し
たアセチレンガスの、２はH2ガスのボンベであ
り、５，６はストツプバルブ、９，１０は流量コ
ントローラ、１３は上ぶた兼カソード電極、１４
及び１５はテフロンリング、１６は下ぶた、１７
はアノード電極（電極径90mm）でヒーターを内
蔵、１８はガラス材（コーニング7059）の基板、
１９はストツプバルブ、２０は真空ポンプ、２１
はマツチングボツクス、２２は高周波電源であ
る。 In Figure 2, 1 is an acetylene gas cylinder diluted to 20% with H 2 gas, 2 is a cylinder of H 2 gas, 5 and 6 are stop valves, 9 and 10 are flow controllers, and 13 is an upper lid and cathode electrode. , 14
and 15 is Teflon ring, 16 is lower lid, 17
is an anode electrode (electrode diameter 90 mm) with a built-in heater, 18 is a glass material (Corning 7059) substrate,
19 is a stop valve, 20 is a vacuum pump, 21
2 is a matching box, and 22 is a high frequency power source.
第２図に示した装置を用い、H2ガスで20％に
希釈されたアセチレンガスを流量20c.c.／min、真
空度0.5torrで室２３へ導入し、基板温度を200℃
とし、グロー放電の高周波電力（13.56MHz）を
10〜160Wとして、プラズマCVD法によつてアモ
ルフアス−Ｃを作製した。第３図は、こうして得
られたアモルフアス−Ｃの光学的バンドギヤツプ
エネルギと成膜速度を示したものであり、成膜時
の高周波電力（RF電力）に依存して、光学的バ
ンドギヤツプエネルギは0.8eV、程度から2.2eV
程度の間で変化し、成膜速度は６Å／sec程度か
ら12Å／sec程度の間で変化することを示してい
る。 Using the apparatus shown in Figure 2, acetylene gas diluted to 20% with H 2 gas was introduced into chamber 23 at a flow rate of 20 c.c./min and a degree of vacuum of 0.5 torr, and the substrate temperature was raised to 200°C.
The high frequency power (13.56MHz) of glow discharge is
Amorphous-C was produced by a plasma CVD method with a power of 10 to 160W. Figure 3 shows the optical bandgap energy and film formation rate of the amorphous-C obtained in this way. Yatsupu energy is 0.8eV, 2.2eV from degree
It is shown that the deposition rate varies between about 6 Å/sec and about 12 Å/sec.
また高周波電力30W以上では膜の硬度はビツカ
ース硬度で1000以上と非常に硬い膜であつた。 Furthermore, when the high frequency power was 30W or more, the film was extremely hard, with a Vickers hardness of more than 1000.
なお、成膜時の高周波電力が高い程、従つて光
学的バンドギヤツプエネルギが小さい程、アモル
フアス−Ｃ膜中でのＨ濃度の低いものが得られ
た。 Note that the higher the high frequency power during film formation, and therefore the lower the optical bandgap energy, the lower the H concentration in the amorphous-C film was obtained.
アモルフアス−Ｃエツチングも第２図に示した
装置を用いH2ガスを流量40c.c.／min、真空度
0.5torrで室２３へ導入し、グロー放電の高周波
電力（13.56、ＭHz）を50W、100W、150Wとし
てプラズマエツチングした。 Amorphous C etching was also performed using the equipment shown in Figure 2, using H2 gas at a flow rate of 40 c.c./min and a degree of vacuum.
Plasma etching was performed by introducing the plasma into chamber 23 at 0.5 torr and using glow discharge high frequency power (13.56, MHz) of 50 W, 100 W, and 150 W.
第１図は、エツチングレートを示すものであつ
て、エツチング時の高周波電力にも依存して数倍
の差があり、また成膜時の高周波電力にも依存す
ることを示している。 FIG. 1 shows the etching rate, and shows that there is a several-fold difference depending on the high frequency power during etching, and it also depends on the high frequency power during film formation.
第１図から明らかなように、成膜時の高周波電
力が大きいアモルフアス−Ｃでも、1000Å程度の
厚さのものは数分〜10数分でエツチングすること
ができる。 As is clear from FIG. 1, even amorphous amorphous C, which requires a large amount of high frequency power during film formation, can be etched in a few minutes to a few minutes to a thickness of about 1000 Å.
（発明の効果）
以上のように本発明のエツチング方法によれ
ば、アモルフアス−Ｃ薄膜をプラズマエツチング
することができるので、半導体素子への応用が可
能となる。また半導体素子の構成に用いられる結
晶Si、多結晶Si、SiO、Si3N4、SiOx、SiNx、
SiNxOy、リンガラス、ボロンガラス、又パター
ニングに用いるレジスト等は、H2プラズマによ
りエツチングされないので、アモルフアス−Ｃと
のエツチングの選択比は非常に大きくなる。(Effects of the Invention) As described above, according to the etching method of the present invention, an amorphous-C thin film can be plasma etched, so that it can be applied to semiconductor devices. In addition, crystalline Si, polycrystalline Si, SiO, Si 3 N 4 , SiO x , SiN x ,
Since SiN x O y , phosphorus glass, boron glass, resist used for patterning, etc. are not etched by H 2 plasma, the etching selectivity with respect to amorphous-C becomes very large.
第１図は本発明によるエツチングレートの特性
を示した説明図、第２図は本発明に用いたプラズ
マ装置の概細図、第３図はアモルフアス−Ｃの特
性を示した説明図である。
１……アセチレンガスボンベ、２……H2ガス
ボンベ、３……CF2ガスボンベ、４……O2ガスボ
ンベ、５，６……ストツプバルブ、９，１０……
流量コントローラ、１３……カソード電極、１
４，１５……テフロンリング、１７……アノード
電極、１８……基板、１９……ストツプバルブ、
２０……真空ポンプ、２１……マツチングボツク
ス、２２……高周波電源、２３……室。
FIG. 1 is an explanatory diagram showing the characteristics of etching rate according to the present invention, FIG. 2 is a schematic diagram of a plasma apparatus used in the present invention, and FIG. 3 is an explanatory diagram showing the characteristics of amorphous-C. 1... Acetylene gas cylinder, 2... H 2 gas cylinder, 3... CF 2 gas cylinder, 4... O 2 gas cylinder, 5, 6... Stop valve, 9, 10...
Flow rate controller, 13...Cathode electrode, 1
4, 15... Teflon ring, 17... Anode electrode, 18... Substrate, 19... Stop valve,
20... Vacuum pump, 21... Matching box, 22... High frequency power supply, 23... Room.
Claims (1)
ー放電を発生させることによつてアモルフアス炭
素薄膜をエツチングすることを特徴とした、アモ
ルフアス炭素薄膜のエツチング方法。1. A method for etching an amorphous carbon thin film, which comprises etching the amorphous carbon thin film by introducing H 2 gas into an etching chamber and generating glow discharge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003685A JPS61231185A (en) | 1985-04-04 | 1985-04-04 | Method for etching thin amorphous carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7003685A JPS61231185A (en) | 1985-04-04 | 1985-04-04 | Method for etching thin amorphous carbon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61231185A JPS61231185A (en) | 1986-10-15 |
| JPS6345465B2 true JPS6345465B2 (en) | 1988-09-09 |
Family
ID=13419959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7003685A Granted JPS61231185A (en) | 1985-04-04 | 1985-04-04 | Method for etching thin amorphous carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61231185A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123189U (en) * | 1989-08-26 | 1991-12-16 |
-
1985
- 1985-04-04 JP JP7003685A patent/JPS61231185A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123189U (en) * | 1989-08-26 | 1991-12-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61231185A (en) | 1986-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102525779B1 (en) | Sulfur doped carbon hard masks | |
| US4971667A (en) | Plasma processing method and apparatus | |
| US5022959A (en) | Method of wet etching by use of plasma etched carbonaceous masks | |
| CN101312126B (en) | Method of forming amorphous carbon film and method of manufacturing semiconductor device using same | |
| US4818560A (en) | Method for preparation of multi-layer structure film | |
| KR970004837B1 (en) | Semiconductor base material | |
| US5256483A (en) | Plasma processing method and apparatus | |
| US4987004A (en) | Plasma processing method and apparatus | |
| EP0646968B1 (en) | Method of manufacturing diamond semiconductor | |
| JPS6345465B2 (en) | ||
| JPH0421638B2 (en) | ||
| JPH03237715A (en) | Etching method | |
| US5175019A (en) | Method for depositing a thin film | |
| JPS61231180A (en) | Method for etching thin amorphous carbon film | |
| JP3295133B2 (en) | Manufacturing method of amorphous semiconductor | |
| JPS62240768A (en) | Formation of deposited film | |
| JPH02248038A (en) | Manufacture of polycrystalline semiconductor substance layer | |
| JPS62226158A (en) | Electrophotographic sensitive body | |
| White et al. | Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp | |
| JPH01223733A (en) | Etching of titanium carbide film and titanium nitride film | |
| JPS60171299A (en) | Thin diamond film and its production | |
| JPS5518024A (en) | Vapor phase reactor | |
| JP2002037696A (en) | Apparatus of producing impurity-added diamond thin film and method of producing it | |
| JPH0271518A (en) | Manufacturing method for electronic devices | |
| JPS61281872A (en) | Formation for amorphous silicon germanium film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |