JPS6345571B2 - - Google Patents
Info
- Publication number
- JPS6345571B2 JPS6345571B2 JP22262083A JP22262083A JPS6345571B2 JP S6345571 B2 JPS6345571 B2 JP S6345571B2 JP 22262083 A JP22262083 A JP 22262083A JP 22262083 A JP22262083 A JP 22262083A JP S6345571 B2 JPS6345571 B2 JP S6345571B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- phase
- temperature
- heating element
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 150
- 238000000034 method Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 33
- 230000006911 nucleation Effects 0.000 claims description 23
- 238000010899 nucleation Methods 0.000 claims description 23
- 230000005501 phase interface Effects 0.000 claims description 16
- 210000002858 crystal cell Anatomy 0.000 description 21
- 230000005684 electric field Effects 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 17
- 210000004027 cell Anatomy 0.000 description 15
- 230000007704 transition Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004988 Nematic liquid crystal Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004990 Smectic liquid crystal Substances 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012461 cellulose resin Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229920003055 poly(ester-imide) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- -1 polyparaxylerin Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/132—Thermal activation of liquid crystals exhibiting a thermo-optic effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/141—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent using ferroelectric liquid crystals
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Spectroscopy & Molecular Physics (AREA)
Description
【発明の詳細な説明】
本発明は、液晶表示素子や液晶―光シヤツタア
レイ等のカイラルスメクテイツク液晶素子を作成
する際に用いるカイラルスメクテイツク液晶の配
向制御方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for controlling the alignment of chiral smect liquid crystal used in producing chiral smect liquid crystal elements such as liquid crystal display elements and liquid crystal-optical shutter arrays.
従来より、走査電極群と信号電極群をマトリク
ス状に構成し、その電極間に液晶化合物を充填し
多数の画素を形成して、画像或いは情報の表示を
行う液晶表示素子は、よく知られている。この表
示素子の駆動法としては、走査電極群に順次周期
的にアドレス信号を選択印加し、信号電極群には
所定の情報信号をアドレス信号と同期させて並列
的に選択印加する時分割駆動が採用されている
が、この表示素子及びその駆動法には以下に述べ
る如き致命的とも言える大きな欠点がある。 Conventionally, liquid crystal display elements are well known in which a scanning electrode group and a signal electrode group are configured in a matrix, and a liquid crystal compound is filled between the electrodes to form a large number of pixels to display images or information. There is. The driving method for this display element is time-division driving, in which an address signal is selectively and periodically applied to a group of scanning electrodes, and a predetermined information signal is selectively applied in parallel to a group of signal electrodes in synchronization with the address signal. However, this display element and its driving method have major and fatal drawbacks as described below.
即ち、画素密度を高く、或いは画面を大きくす
るのが難しいことである。従来の液晶の中で応答
速度が比較的高く、しかも消費電力が小さいこと
から、表示素子として実用に供されてるのは殆ん
どが、例えばM.SchadtとW.Helfrich著
“Applied Physics Letters”Vo.18、No.4(1971、
2、15)、P.127〜128の“Voltage―.
Dependent Optical Activity of a Twisted
Nematic Liquid Crystal”に示されたTN
(twisted nematic)型の液晶を用いたものであ
り、この型の液晶は、無電界状態で正の誘電異方
性をもつネマチツク液晶の分子が液晶層厚方向で
捩れた構造(ヘリカル構造)を形成し、両電極面
でこの液晶の分子が平行に配列した構造を形成し
ている。一方、電界印加状態では、正の誘電異方
性をもつネマチツク液晶が電界方向に配列し、こ
の結果光学変調を起すことができる。この型の液
晶を用いてマトリクス電極構造によつて表示素子
を構成した場合、走査電極と信号電極が共に選択
される領域(選択点)には、液晶分子を電極面に
垂直に配列させるに要する閾値以上の電圧が印加
され、走査電極と信号電極が共に選択されない領
域(非選択点)には電圧は印加されず、したがつ
て液晶分子は電極面に対して並行な安定配列を保
つている。このような液晶セルの上下に互いにク
ロスニコル関係にある直線偏光子を配置すること
により、選択点では光が透過せず、非選択点では
光が透過するため、画像素子とすることが可能と
なる。然し乍ら、マトリクス電極構造を構成した
場合には、走査電極が選択され、信号電極が選択
されない領域、或いは走査電極が選択されず、信
号電極が選択される領域(所謂“半選択点”)に
も有限に電界がかかつてしまう。選択点にかかる
電圧と、半選択点にかかる電圧の差が充分に大き
く、液晶分子を電界に垂直に配列させるのに要す
る電圧閾値がこの中間の電圧値に設定されるなら
ば、表示素子は正常に動作するわけであるが、走
査線数(N)を増やして行つた場合、画面全体
(1フレーム)を走査する間に一つの選択点に有
効な電界がかかつている時間(duty比)が1/
Nの割合で減少してしまう。このために、くり返
し走査を行つた場合の選択点と非選択点にかかる
実効値としての電圧差は、走査線数が増えれば増
える程小さくなり、結果的には画像コントラスト
の低下やクロストークが避け難い欠点となつてい
る。このような現象は、双安定性を有さない液晶
(電極面に対し、液晶分子が水平に配向している
のが安定状態であり、電界が有効に印加されてい
る間のみに垂直に配向する)を時間的蓄積効果を
利用して駆動する(即ち、繰り返し走査する)と
きに生ずる本質的には避け難い問題点である。こ
の点を改良するために、電圧平均化法、2周波駆
動法や、多重マトリクス法等が既に提案されてい
るが、いずれの方法でも不充分であり、表示素子
の大画面化や高密度化は、走査線数が充分に増や
せないことによつて頭打ちになつているのが現状
である。 That is, it is difficult to increase the pixel density or enlarge the screen. Among conventional liquid crystals, most of them are used practically as display elements because they have a relatively high response speed and low power consumption. Vo.18, No.4 (1971,
2, 15), “Voltage-.” on P.127-128.
Dependent Optical Activity of a Twisted
TN shown in “Nematic Liquid Crystal”
This type of liquid crystal has a structure (helical structure) in which the molecules of the nematic liquid crystal, which has positive dielectric anisotropy in the absence of an electric field, are twisted in the thickness direction of the liquid crystal layer. The liquid crystal molecules form a structure in which they are arranged in parallel on both electrode surfaces. On the other hand, when an electric field is applied, nematic liquid crystals with positive dielectric anisotropy are aligned in the direction of the electric field, resulting in optical modulation. When a display element is constructed using this type of liquid crystal with a matrix electrode structure, in the region where both the scanning electrode and the signal electrode are selected (selected point), there is a A voltage higher than the threshold is applied, and no voltage is applied to areas where neither the scanning electrode nor the signal electrode is selected (non-selected points), so the liquid crystal molecules maintain a stable alignment parallel to the electrode surface. . By arranging linear polarizers above and below a liquid crystal cell in a cross-Nicol relationship with each other, light does not pass through selected points, but light passes through non-selected points, making it possible to use it as an image element. Become. However, when a matrix electrode structure is configured, there is a possibility that the scan electrodes are selected and the signal electrodes are not selected, or the scan electrodes are not selected and the signal electrodes are selected (so-called "half-selected points"). The electric field becomes finite. If the difference between the voltage applied to the selected point and the voltage applied to the half-selected point is sufficiently large, and the voltage threshold required to align the liquid crystal molecules perpendicular to the electric field is set to an intermediate voltage value, the display element will It works normally, but if you increase the number of scanning lines (N), the time that an effective electric field is applied to one selected point while scanning the entire screen (1 frame) (duty ratio) is 1/
It decreases at a rate of N. For this reason, when repeated scanning is performed, the effective voltage difference between selected points and non-selected points becomes smaller as the number of scanning lines increases, resulting in a decrease in image contrast and crosstalk. It has become an unavoidable drawback. This phenomenon is caused by a liquid crystal that does not have bistability (the stable state is when the liquid crystal molecules are aligned horizontally with respect to the electrode surface, and the liquid crystal molecules are aligned vertically only while an electric field is effectively applied). This is essentially an unavoidable problem that arises when driving (i.e., repeatedly scanning) using the temporal accumulation effect. In order to improve this point, voltage averaging method, dual-frequency driving method, multiple matrix method, etc. have already been proposed, but all of these methods are insufficient, and it is necessary to increase the screen size and density of display elements. Currently, the number of scanning lines has reached a plateau due to the inability to increase the number of scanning lines sufficiently.
一方、プリンタ分野を眺めて見るに、電気信号
を入力としてハードコピーを得る手段として、画
素密度の点からもスピードの点からも電気画像信
号を光の形で電子写真感光体に与えるレーザービ
ームプリンタ(LBP)が現在最も優れている。
ところがLBPには、
1 プリンタとしての装置が大型になる;
2 ポリゴンスキヤナの様な高速の駆動部分があ
り騒音が発生し、また厳しい機械的精度が要求
される;など
の欠点がある。この様な欠点を解消すべく電気信
号を光信号に変換する素子として、液晶シヤツタ
ーアレイが提案されている。ところが、液晶シヤ
ツタアレイを用いて画素信号を与える場合、たと
えば210mmの長さの中に画素信号を16dot/mmの割
合で書き込むためには、3000個以上の信号発生部
を有していなければならず、それぞれに独立した
信号を与えるためには、元来それぞれの信号発生
部全てに信号を送るリード線を配線しなければな
らず、製作上困難であつた。 On the other hand, looking at the field of printers, laser beam printers provide electrical image signals in the form of light to electrophotographic photoreceptors in terms of both pixel density and speed, as a means of obtaining hard copies using electrical signals as input. (LBP) is currently the best.
However, LBP has the following drawbacks: 1. The printer is large; 2. It has a high-speed moving part like a polygon scanner, which generates noise, and requires strict mechanical precision. In order to overcome these drawbacks, a liquid crystal shutter array has been proposed as an element that converts electrical signals into optical signals. However, when providing pixel signals using a liquid crystal shutter array, for example, in order to write pixel signals at a rate of 16 dots/mm within a length of 210 mm, it is necessary to have more than 3000 signal generating sections. In order to provide independent signals to each, it was originally necessary to wire lead wires to send signals to all of the signal generating parts, which was difficult to manufacture.
そのため、1LINE(ライン)分の画素信号を数
行に分割された信号発生部により、時分割して与
える試みがなされている。この様にすれば、信号
を与える電極を、複数の信号発生部に対して共通
にすることができ、実質配線を大幅に軽減するこ
とができるからである。ところが、この場合通常
行われているように双安定性を有さない液晶を用
いて行数(N)を増して行くと、信号ONの時間
が実質的に1/Nとなり感光体上で得られる光量
が減少してしまつたり、クロストークの問題が生
ずるという難点がある。 For this reason, attempts have been made to provide pixel signals for one line in a time-division manner using a signal generating section divided into several lines. This is because the electrode for applying a signal can be shared by a plurality of signal generating sections, and the amount of wiring can be substantially reduced. However, if the number of lines (N) is increased by using a liquid crystal that does not have bistability, as is usually done in this case, the signal ON time becomes essentially 1/N, and the amount of time that can be obtained on the photoreceptor is reduced. There are disadvantages in that the amount of light emitted is reduced and crosstalk problems occur.
このような従来型の液晶素子の欠点を改善する
ものとして、双安定性を有する液晶素子の使用
が、ClarkおよびLagerwallにより提案されてい
る(特開昭56−107216号公報、米国特許第
4367924号明細書等)。双安定性を有する液晶とし
ては、一般に、カイラルスメクテイツクC相
(SmC*)又はH相(SmH*)を有する強誘電性
液晶が用いられる。この液晶は電界に対して第1
の光学的安定状態と第2の光学的安定状態からな
る双安定状態を有し、従つて前述のTN型の液晶
で用いられた光学変調素子とは異なり、例えば一
方の電界ベクトルに対して第1の光学的安定状態
に液晶が配向し、他方の電界ベクトルに対しては
第2の光学的安定状態に液晶が配向される。また
この型の液晶は、加えられる電界に応答して、極
めて速やかに上記2つの安定状態のいずれかを取
り、且つ電界の印加のないときはその状態を維持
する性質を有する。このような性質を利用するこ
とにより、上述した従来のTN型素子の問題点の
多くに対して、かなり本質的な改善が得られる。
この点は、本発明と関連して、以下に、更に詳細
に説明する。しかしながら、この双安定性を有す
る液晶を用いる光学変調素子が所定の駆動特性を
発揮するためには、一対の平行基板間に配置され
る液晶が、電界の印加状態とは無関係に、上記2
つの安定状態の間での変換が効果的に起るような
分子配列状態にあることが必要である。たとえば
SmC*またはSmH*相を有する強誘電性液晶につ
いては、SmC*またはSmH*相を有する液晶分子
層が基板面に対して垂直で、したがつて液晶分子
軸が基板面にほぼ平行に配列した領域(モノドメ
イン)が形成される必要がある。しかしながら、
従来の双安定性を有する液晶を用いる光学変調素
子においては、このようなモノドメイン構造を有
する液晶の配向状態が、必ずしも満足に形成され
なかつたために、充分な特性が得られなかつたの
が実情である。 To improve the drawbacks of conventional liquid crystal devices, the use of bistable liquid crystal devices has been proposed by Clark and Lagerwall (Japanese Patent Laid-Open No. 56-107216, U.S. Patent No.
4367924 specification, etc.). As a liquid crystal having bistability, a ferroelectric liquid crystal having a chiral smectic C phase (SmC * ) or H phase (SmH * ) is generally used. This liquid crystal has a first response to the electric field.
It has a bistable state consisting of an optically stable state of The liquid crystal is aligned in one optically stable state, and the liquid crystal is aligned in a second optically stable state for the other electric field vector. Furthermore, this type of liquid crystal has the property of very quickly taking one of the above two stable states in response to an applied electric field, and maintaining that state when no electric field is applied. By utilizing these properties, many of the problems of the conventional TN type devices mentioned above can be significantly improved.
This point will be explained in more detail below in connection with the present invention. However, in order for an optical modulation element using this bistable liquid crystal to exhibit predetermined driving characteristics, the liquid crystal disposed between a pair of parallel substrates must be
It is necessary that the molecules be in such a state that conversion between two stable states can occur effectively. for example
For ferroelectric liquid crystals with SmC * or SmH * phase, the liquid crystal molecular layer with SmC * or SmH * phase is perpendicular to the substrate surface, and therefore the liquid crystal molecular axes are aligned approximately parallel to the substrate surface. A region (monodomain) needs to be formed. however,
The reality is that in conventional optical modulation elements using liquid crystals with bistable properties, the alignment state of the liquid crystals having such a monodomain structure was not always formed satisfactorily, and therefore sufficient characteristics could not be obtained. It is.
たとえば、このような配向状態を与えるため
に、磁界を印加する方法、せん断力を印加する方
法、などが提案されている。しかしながら、これ
らは、いずれも必ずしも満足すべき結果を与える
ものではなかつた。たとえば、磁界を印加する方
法は、大規模な装置を要求するとともに作動特性
の良好な薄層セルとは両立しがたいという難点が
あり、また、せん断力を印加する方法は、セルを
作成後に液晶を注入する方法と両立しないという
難点がある。 For example, methods of applying a magnetic field, methods of applying shear force, etc. have been proposed in order to provide such an orientation state. However, none of these methods necessarily gave satisfactory results. For example, the method of applying a magnetic field requires large-scale equipment and is incompatible with thin-layer cells with good operating characteristics. This method has the disadvantage that it is incompatible with the method of injecting liquid crystal.
ところで、前述の如きTN型の液晶を用いた素
子では、液晶分子のモノドメインを基板面に平行
な状態で形成する方法として例えば基板面を布の
如きもので摺擦する(ラビング)方法やSiOを斜
め蒸着する方法等が用いられている。例えばラビ
ングを施された基板面に接する液晶に対しては方
向性が付与され、液晶分子はその方向に従つて優
先して配列するのが最もエネルギーの低い(即ち
安定な)状態となる。この様なラビング処理面に
は、液晶分子を一方向に優先して配列させる効果
が付与されている。この配向効果が付与された平
面をもつ構造体は、例えば、W.HelfrichとM.
Schadtのカナダ特許1010136号公報等に示されて
いる。このラビング法により配向効果を形成する
方法のほかに、基板の上にSiOやSiO2を斜め蒸着
して形成した平面をもつ構造体を用い、このSiO
又はSiO2の一軸的異方性を有する平面が液晶分
子を一方向に優先して配向させる効果を有してい
る。 By the way, in the device using the TN type liquid crystal as described above, methods for forming monodomains of liquid crystal molecules in a state parallel to the substrate surface include, for example, rubbing the substrate surface with something like cloth, A method such as diagonal vapor deposition is used. For example, the liquid crystal in contact with the rubbed substrate surface is given a directionality, and the liquid crystal molecules preferentially align in that direction, resulting in the lowest energy (that is, the most stable) state. Such a rubbed surface has the effect of preferentially arranging liquid crystal molecules in one direction. A structure with a plane to which this orientation effect is applied is described, for example, by W. Helfrich and M.
This is shown in Schadt's Canadian Patent No. 1010136, etc. In addition to the method of creating an alignment effect using this rubbing method, a structure with a plane formed by obliquely vapor depositing SiO or SiO 2 on a substrate is used, and this SiO
Alternatively, the uniaxially anisotropic plane of SiO 2 has the effect of preferentially aligning liquid crystal molecules in one direction.
このように、液晶素子を作成する上で、ラビン
グ法や斜め蒸着法による配向制御法は、好ましい
方法の1つであるが、双安定性を有する液晶に対
して、これらの方法により配向制御を施こすと、
液晶を一方向のみに優先して配向させる壁効果を
有する平面が形成され、それが、電界に対する双
安定性、高速応答性やモノドメイン形成性を阻害
する欠点がある。 In this way, alignment control methods such as rubbing and oblique evaporation are one of the preferred methods for producing liquid crystal elements, but these methods cannot be used to control alignment for liquid crystals that have bistability. When applied,
A plane having a wall effect that preferentially orients the liquid crystal in only one direction is formed, which has the drawback of inhibiting bistability to electric fields, high-speed response, and monodomain formation.
本発明の主要な目的は、上述した事情に鑑み、
高速応答性、高密度画素と大面積を有する表示素
子、あるいは高速度のシヤツタスピードを有する
光学シヤツター等として潜在的な適性を有する双
安定性を有する液晶を使用する光学変調素子にお
いて、従来問題であつたモノドメイン形成性ない
しは初期配向性を改善することにより、その特性
を充分に発揮させ得るカイラルスメクテイツク液
晶の配向制御方法を提供することにある。 In view of the above-mentioned circumstances, the main object of the present invention is to
Conventional problems have been solved in optical modulators using bistable liquid crystals, which have potential suitability as display devices with high-speed response, high-density pixels, and large areas, or optical shutters with high shutter speeds. The object of the present invention is to provide a method for controlling the alignment of a chiral smect liquid crystal, which can fully exhibit its properties by improving the monodomain formation property or initial alignment.
本発明者らは上述の目的で更に研究した結果、
とくに液晶材料が別の相(例えば等方相等の高温
状態)より一軸性異方相(例えばSmA(スメクテ
イツクA)等の低温状態)へ移行する降温過程に
於ける配向性に着目したところ、別の相(高温
相)より、一軸性異方相へ相転移する場合、別の
相領域と上記一軸性異方相領域との空間的相界面
に於て、新たに相転移して生成する一軸性異方相
の分子軸は、既に形成されていた一軸性異方相の
液晶分子配向方向と平行に配向し、しかも、上記
一軸性異方相領域の生長する方向と、液晶分子の
配向方向を直交関係とする場合、極めて安定にモ
ノドメイン一軸異方相が生長することが判明し
た。さらに、本発明者らは水平配向性を有する側
壁面を有する構造体を核発生部材(一軸異方相の
液晶核の発生を促す部材を意味する)として配設
することにより、最初の一軸性異方相の核を液晶
分子が核発生部材と平行に配向したモノドメイン
の一軸異方相として形成することが可能となり、
この結果液晶の双安定性に基づく素子の作動特性
と液晶層のモノドメイン性も両立し得る構造の液
晶素子が得られることを見い出した。 As a result of further research by the present inventors for the above-mentioned purpose,
In particular, we focused on the orientation during the cooling process in which the liquid crystal material transitions from another phase (for example, a high temperature state such as an isotropic phase) to a uniaxial anisotropic phase (for example, a low temperature state such as SmA (Smectic A)). When a phase transition occurs from a phase (high temperature phase) to a uniaxial anisotropic phase, a new phase transition occurs at the spatial phase interface between another phase region and the uniaxial anisotropic phase region. The molecular axes of the anisotropic phase are oriented parallel to the orientation direction of liquid crystal molecules in the uniaxial anisotropic phase that has already been formed, and are also parallel to the direction in which the uniaxial anisotropic phase region grows and the orientation direction of the liquid crystal molecules. It was found that a monodomain uniaxially anisotropic phase grows extremely stably when the relationships are orthogonal. Furthermore, the present inventors have developed a structure that has horizontally aligned sidewall surfaces as a nucleation member (meaning a member that promotes the generation of liquid crystal nuclei in a uniaxially anisotropic phase). It is now possible to form the anisotropic phase nucleus as a uniaxially anisotropic phase of monodomains in which liquid crystal molecules are aligned parallel to the nucleation member.
As a result, it has been found that a liquid crystal element can be obtained with a structure that is compatible with the operating characteristics of the element based on the bistability of the liquid crystal and the monodomain nature of the liquid crystal layer.
本発明は前述の知見に基づくものであり、すな
わち本発明による液晶の配向制御法は、前述の知
見に基づいてなしたもので、一対の基板間で一方
向に配列した液晶の一軸異方相と該相より高温側
の別の相との相界面を形成し、前記相界面付近の
別の相を降温下で前記一軸異方相の液晶配列方向
と平行方向に配列した液晶の一軸異方相に相変さ
せ、該相変化を前記相界面からその垂直方向に向
けて連続的に生じさせることにより、一方向に配
列した液晶のモノドメインを形成する液晶の配向
制御法に特徴を有している。 The present invention is based on the above-mentioned knowledge, that is, the liquid crystal alignment control method according to the present invention has been made based on the above-mentioned knowledge, and is based on the uniaxially anisotropic phase of liquid crystal aligned in one direction between a pair of substrates. A uniaxially anisotropic liquid crystal is formed by forming a phase interface between the phase and another phase on the higher temperature side than the above phase, and arranging the other phase near the phase interface in a direction parallel to the liquid crystal alignment direction of the uniaxially anisotropic phase as the temperature decreases. It is characterized by a liquid crystal alignment control method in which a liquid crystal monodomain aligned in one direction is formed by causing a phase change in a phase and causing the phase change to occur continuously from the phase interface in a direction perpendicular to the phase interface. ing.
以下、必要に応じて図面を参照しつつ、本発明
を更に詳細に説明する。 Hereinafter, the present invention will be described in further detail with reference to the drawings as necessary.
本発明で用いる液晶材料としては、とくに適し
たものは、双安定性を有する液晶であつて強誘電
性を有するものであつて、具体的にはカイラルス
メクテイツクC相(SmC*)又はH相(SmH*)
を有する液晶を用いることができる。 Particularly suitable liquid crystal materials for use in the present invention are those having bistability and ferroelectricity, specifically chiral smectate C phase (SmC * ) or H Phase (SmH * )
A liquid crystal having the following characteristics can be used.
強誘電性液晶の詳細については、たとえばLE
JOURNAL DE PHYSIQUE LETTERS”36
(L―69)1975、「Ferroelecric Liquid
Crystals」;“Applied Physics Letters”36(L
―69)1975、「Ferroelectric Liquid Crystals」;
“Applied Physics Letters”36(11)1980、
「Submicro Second Bistable Electrooptic
Switching in Liquid Crystals」;“固体物理”16
(141)1981「液晶」等に記載されており、本発明
ではこれらに開示された強誘電性液晶を用いるこ
とができる。 For more information on ferroelectric liquid crystals, see e.g. LE
JOURNAL DE PHYSIQUE LETTERS” 36
(L-69) 1975, “Ferroelecric Liquid
Crystals”; “Applied Physics Letters” 36 (L
―69) 1975, “Ferroelectric Liquid Crystals”;
“Applied Letter Physics” 36 (11) 1980,
“Submicro Second Bistable Electrooptic
Switching in Liquid Crystals”; “Solid State Physics” 16
(141) 1981 "Liquid Crystal" etc., and the ferroelectric liquid crystal disclosed in these can be used in the present invention.
強誘電性液晶化合物の具体例としては、デシロ
キシベンジリデン―p′―アミノ―2―メチルプチ
ルシンナメート(DOBAMBC)、ヘキシルオキ
シベンジリデン―p′―アミノ―2―クロロプロピ
ルシンナメート(HOBACPC)、4―o―(2―
メチル)―ブチルレゾルシリデン―4′―オクチル
アニリン(MBRA8)が挙げられる。 Specific examples of ferroelectric liquid crystal compounds include decyloxybenzylidene-p'-amino-2-methylbutylcinnamate (DOBAMBC), hexyloxybenzylidene-p'-amino-2-chloropropylcinnamate (HOBACPC), -o-(2-
Methyl)-butylresolcylidene-4'-octylaniline (MBRA8).
これらの材料を用いて素子を構成する場合、液
晶化合物がSmC*相又はSmH*相となるような温
度状態に保持する為、必要に応じて素子をヒータ
ーが埋め込まれた銅ブロツク等により支持するこ
とができる。 When constructing an element using these materials, the element is supported by a copper block with a heater embedded, etc., as necessary, in order to maintain the temperature state such that the liquid crystal compound becomes the SmC * phase or SmH * phase. be able to.
第1図は、強誘電性液晶の動作説明のために、
セルの例を模式的に描いたものである。11と、
11′は、In2O3、SnO2あるいはITO(Indium―
Tin Oxide)等の薄膜からなる透明電極で被覆さ
れた基板(ガラス板)であり、その間に液晶分子
層12がガラス面に垂直になるよう配向した
SmC*相又はSmH*相の液晶が封入されている。
太線で示した線13が液晶分子を表わしており、
この液晶分子13はその分子に直交した方向に双
極子モーメント(P⊥)14を有している。基板
11と11′上の電極間に一定の閾値以上の電圧
を印加すると、液晶分子13のらせん構造がほど
け、双極子モーメント(P⊥)14がすべて電界
方向に向くよう、液晶分子13は配向方向を変え
ることができる。液晶分子13は、細長い形状を
有しており、その長軸方向と短軸方向で屈折率異
方性を示し、従つて例えばガラス面の上下に互い
にクロスニコルの偏光子を置けば、電圧印加極性
によつて光学特性が変わる液晶光学変調素子とな
ることは、容易に理解される。 Figure 1 is for explaining the operation of ferroelectric liquid crystal.
This is a schematic drawing of an example of a cell. 11 and
11′ is In 2 O 3 , SnO 2 or ITO (Indium-
A substrate (glass plate) coated with a transparent electrode made of a thin film such as Tin Oxide, etc., between which a liquid crystal molecular layer 12 is oriented perpendicular to the glass surface.
Enclosed is SmC * phase or SmH * phase liquid crystal.
The thick line 13 represents liquid crystal molecules,
This liquid crystal molecule 13 has a dipole moment (P⊥) 14 in a direction perpendicular to the molecule. When a voltage higher than a certain threshold is applied between the electrodes on the substrates 11 and 11', the helical structure of the liquid crystal molecules 13 is unraveled, and the liquid crystal molecules 13 are oriented so that all the dipole moments (P⊥) 14 are oriented in the direction of the electric field. You can change direction. The liquid crystal molecules 13 have an elongated shape and exhibit refractive index anisotropy in the long axis direction and the short axis direction. Therefore, for example, if crossed Nicol polarizers are placed above and below the glass surface, voltage can be applied. It is easily understood that this results in a liquid crystal optical modulation element whose optical properties change depending on the polarity.
本発明の液晶素子で好ましく用いられる液晶セ
ルは、その厚さを充分に薄く(例えば10μ以下)
することができる。このように液晶層が薄くなる
にしたがい、第2図に示すように電界を印加して
いない状態でも液晶分子のらせん構造がほどけ、
非らせん構造となり、その双極子モーメントPま
たはP′は上向き24又は下向き24′のどちらか
の状態をとる。このようなセルに、第2図に示す
如く一定の閾値以上の極性の異る電界E又はE′を
電圧印加手段21と21′により付与すると、双
極子モーメントは、電界E又はE′の電界ベクトル
に対応して上向き24又は下向き24′と向きを
変え、それに応じて液晶分子は、第1の安定状態
23かあるいは第2の安定状態23′の何れか1
方に配向する。 The liquid crystal cell preferably used in the liquid crystal element of the present invention has a sufficiently thin thickness (for example, 10μ or less).
can do. As the liquid crystal layer becomes thinner, the helical structure of the liquid crystal molecules unravels even when no electric field is applied, as shown in Figure 2.
It becomes a non-helical structure, and its dipole moment P or P' takes either an upward direction 24 or a downward direction 24'. When an electric field E or E' with a different polarity above a certain threshold value is applied to such a cell by the voltage applying means 21 and 21' as shown in FIG. 2, the dipole moment is The direction changes depending on the vector, upward 24 or downward 24', and accordingly the liquid crystal molecules are either in the first stable state 23 or the second stable state 23'.
Orient towards.
このような強誘電性を液晶素子として用いるこ
との利点は、先にも述べたが2つある。その第1
は、応答速度が極めて速いことであり、第2は液
晶分子の配向が双安定性を有することである。第
2の点を、例えば第2図によつて更に説明する
と、電界Eを印加すると液晶分子は第1の安定状
態23に配向するが、この状態は電界を切つても
安定である。又、逆向きの電界E′を印加すると、
液晶分子は第2の安定状態23′に配向してその
分子の向きを変えるが、やはり電界を切つてもこ
の状態に留つている。又、与える電界Eが一定の
閾値を越えない限り、それぞれの配向状態にやは
り維持されている。このような応答速度の速さ
と、双安定性が有効に実現されるにはセルとして
は出来るだけ薄い方が好ましい。 As mentioned earlier, there are two advantages to using such ferroelectricity as a liquid crystal element. The first
The first is that the response speed is extremely fast, and the second is that the alignment of liquid crystal molecules has bistability. To further explain the second point with reference to FIG. 2, for example, when the electric field E is applied, the liquid crystal molecules are oriented in a first stable state 23, and this state remains stable even when the electric field is turned off. Also, when applying an electric field E′ in the opposite direction,
The liquid crystal molecules change their orientation by aligning into a second stable state 23', but remain in this state even when the electric field is removed. Further, as long as the applied electric field E does not exceed a certain threshold value, each orientation state is maintained. In order to effectively realize such fast response speed and bistability, it is preferable that the cell be as thin as possible.
この様な強誘電性を有する液晶で素子を形成す
るに当たつて最も問題となるのは、先にも述べた
ように、SmC*相又はSmH*を有する層が基板面
に対して垂直に配列し且つ液晶分子が基板面に略
平行に配向した、モノドメイン性の高いセルを形
成することが困難なことであり、この点に解決を
与えることが本発明の主要な目的である。 The biggest problem in forming devices using liquid crystals with such ferroelectricity is, as mentioned earlier, that the layer containing the SmC * phase or SmH * is perpendicular to the substrate surface. It is difficult to form a highly monodomain cell in which the liquid crystal molecules are aligned and oriented substantially parallel to the substrate surface, and it is the main purpose of the present invention to provide a solution to this problem.
第3図Aは、本発明の液晶配向制御法によつて
得た液晶素子の一実施例に関する部分的な平面図
であり、第3図Bは、そのA―A′断面図である。
いずれもセル構造をわかり易くするため、正確な
縮尺度の図とはなつていない。本例では、プリン
タ用シヤツターアレーの構成例が示されている。
第3図で示す液晶セル100は、ガラス板又はプ
ラスチツク板などからなる一対の基板101と、
101′をスペーサ(図示せず)で所定の間隔に
保持され、この一対の基板を接着剤106で接着
したセル構造を有しており、さらに基板101の
上には複数の透明電極102からなる電極群(例
えば、マトリクス電極構造のうち走査電圧印加用
電極群)が例えば帯状パターンなどの所定パター
ンで形成されている。基板101′の上には前述
の透明電極102と交差させた複数の透明電極1
02′からなる電極群(例えば、マトリクス電極
構造のうちの信号電圧印加用電極群)が例えば図
示する如くリード107′でチドリ状に接続され
たセグメントパターンで形成されている。透明電
極102はリード107と、透明電極102′は
リード107″にそれぞれ接続されて、外部回路
からの信号がそれぞれのリード107と107″
の端子に入力される。 FIG. 3A is a partial plan view of an embodiment of a liquid crystal element obtained by the liquid crystal alignment control method of the present invention, and FIG. 3B is a cross-sectional view taken along line AA'.
In order to make the cell structure easier to understand, the drawings are not drawn to an exact scale. In this example, a configuration example of a printer shutter array is shown.
The liquid crystal cell 100 shown in FIG. 3 includes a pair of substrates 101 made of glass plates, plastic plates, etc.
101' are held at a predetermined distance by a spacer (not shown), and has a cell structure in which the pair of substrates are bonded with an adhesive 106, and furthermore, a plurality of transparent electrodes 102 are formed on the substrate 101. An electrode group (for example, an electrode group for applying a scanning voltage in a matrix electrode structure) is formed in a predetermined pattern such as a strip pattern. On the substrate 101', a plurality of transparent electrodes 1 are arranged to intersect with the transparent electrode 102 described above.
02' (for example, a signal voltage applying electrode group in a matrix electrode structure) is formed in a segment pattern connected in a staggered manner by leads 107', as shown. The transparent electrode 102 is connected to the lead 107, and the transparent electrode 102' is connected to the lead 107'', so that signals from the external circuit are connected to the leads 107 and 107'', respectively.
input to the terminal.
この様な基板101と101′には、例えば、
一酸化硅素、二酸化硅素、酸化アルミニウム、ジ
ルコニア、フツ化マグネシウム、酸化セリウム、
フツ化セリウム、シリコン窒化物、シリコン炭化
物、ホウ素窒化物、ポリビニルアルコール、ポリ
イミド、ポリアミドイミド、ポリエステルイミ
ド、ポリパラキシレリン、ポリエステル、ポリカ
ーボネート、ポリビニルアセタール、ポリ塩化ビ
ニル、ポリアミド、ポリスチレン、セルロース樹
脂、メラミン樹脂、ユリア樹脂やアクリル樹脂な
どを用いて被膜形成した絶縁膜(図示せず)を設
けることができる。この絶縁膜は、液晶層103
に微量に含有される不純物等のために生ずる電流
の発生を防止できる利点をも有しており、従つて
動作を繰り返し行なつても液晶化合物を劣化させ
ることがない。 Such substrates 101 and 101' include, for example,
Silicon monoxide, silicon dioxide, aluminum oxide, zirconia, magnesium fluoride, cerium oxide,
Cerium fluoride, silicon nitride, silicon carbide, boron nitride, polyvinyl alcohol, polyimide, polyamideimide, polyesterimide, polyparaxylerin, polyester, polycarbonate, polyvinyl acetal, polyvinyl chloride, polyamide, polystyrene, cellulose resin, melamine An insulating film (not shown) made of resin, urea resin, acrylic resin, or the like can be provided. This insulating film is the liquid crystal layer 103.
It also has the advantage of being able to prevent the generation of current caused by impurities etc. contained in trace amounts in the liquid crystal compound, so that even if the operation is repeated, the liquid crystal compound will not deteriorate.
この具体例におけるセル構造は、前述した様な
所定温度で強誘電性を示す液晶層103と核発生
部材104およびヒータなどの発熱体105を備
えている。 The cell structure in this specific example includes a liquid crystal layer 103 that exhibits ferroelectricity at a predetermined temperature as described above, a nucleation member 104, and a heating element 105 such as a heater.
核発生部材104は、例えばポリビニルアルコ
ール、ポリイミド、ポリアミドイミド、ポリエス
テルイミド、ポリパラキシレリン、ポリエステ
ル、ポリカーボネート、ポリビニルアセタール、
ポリ塩化ビニル、ポリ酢酸ビニル、ポリアミド、
ポリスチレン、セルロース樹脂、メラミン樹脂、
ユリア樹脂やアクリル樹脂などの樹脂類又は
SiO、SiO2又はTiO2などの無機化合物などによ
つて被膜形成した後、通常のフオトリソグラフイ
法により帯状の形状で形成される。又、この核発
生部材104は基板101又は101′と同一の
材料で形成することも可能である。 The nucleating member 104 is made of, for example, polyvinyl alcohol, polyimide, polyamideimide, polyesterimide, polyparaxylerin, polyester, polycarbonate, polyvinyl acetal,
polyvinyl chloride, polyvinyl acetate, polyamide,
polystyrene, cellulose resin, melamine resin,
Resins such as urea resin and acrylic resin or
After forming a film with an inorganic compound such as SiO, SiO 2 or TiO 2 , it is formed into a band-like shape by a normal photolithography method. Further, the nucleation member 104 can also be made of the same material as the substrate 101 or 101'.
又、発熱体105としては例えば酸化インジウ
ム、酸化錫やITO(Indium Tin Oxide)などの
薄膜抵抗体を用いることが適している。 Further, as the heating element 105, it is suitable to use a thin film resistor such as indium oxide, tin oxide, or ITO (Indium Tin Oxide).
この様な液晶セル100は、基板101と10
1′の両側にはクロスニコル状態又はパラレルニ
コル状態とした偏光子108と108′がそれぞ
れ配置されて、電極102と102′の間に電圧
を印加した時に光学変調を生じることになる。 Such a liquid crystal cell 100 includes substrates 101 and 10.
Polarizers 108 and 108' in a crossed Nicol state or a parallel Nicol state are arranged on both sides of electrode 1', respectively, and optical modulation occurs when a voltage is applied between electrodes 102 and 102'.
第3図に示す液晶セル100についての更に具
体的な例を示すと、例えば透明電極102は幅を
62.5μmとした帯状の走査電極群とし、一方透明
電極102′は一画素を形成し、26.5μm×62.5μm
の信号電極群とすることができる。又、発熱体1
05は平均幅0.6mm、膜厚1000ÅのITO薄膜とし、
液晶層103は約2μm厚程度で保持されているこ
とが好ましい。 To give a more specific example of the liquid crystal cell 100 shown in FIG. 3, for example, the transparent electrode 102 has a width
A band-shaped scanning electrode group with a diameter of 62.5 μm is used, while a transparent electrode 102′ forms one pixel and has a width of 26.5 μm×62.5 μm.
The signal electrode group can be made into a group of signal electrodes. Also, heating element 1
05 is an ITO thin film with an average width of 0.6 mm and a film thickness of 1000 Å.
It is preferable that the liquid crystal layer 103 is maintained at a thickness of approximately 2 μm.
この様な液晶セル100は、加熱ケース(図示
せず)に収容し、上下に互いに直交する偏光子1
08と108′を配置して、これを電子写真プリ
ンタ用液晶シヤツターアレーとして動作させるこ
とができる。この場合、第3図Aの矢印Bが電子
写真感光ドラムの回転方向となる。 Such a liquid crystal cell 100 is housed in a heating case (not shown), and polarizers 1 are arranged vertically orthogonally to each other.
08 and 108' can be arranged to operate as a liquid crystal shutter array for an electrophotographic printer. In this case, arrow B in FIG. 3A is the direction of rotation of the electrophotographic photosensitive drum.
核発生部材104は、例えば基板101の上に
ポリイミド形成溶液(日立化成工業(株)製の
「PIQ」;不揮発分濃度14.5wt%)を3000rpmで回
転するスピナー塗布機で10秒間塗布し、120℃で
30分間加熱を行なつて2μの被膜を形成した。次
いで、ポジ型レジスト溶液(Shipley社製の
“AZ1350”)をスピナー塗布し、プリベークした。
このレジスト層上にマスク幅0.5mmの帯状マスク
を用いて露光した。次いでテトラメチルアンモニ
ウムハイドロオキサイド含有の現像液“MF312”
で現像することにより、露光部分のレジスト膜と
その下層のポリイミド膜のエツチングを行ないス
ルーホールを形成させ、水洗、乾燥を行なつた
後、メチルエチルケトンを用いて末露光部のレジ
スト膜を除去した。しかる後、200℃で60分間、
350℃で30分間の加熱により硬化を行ない、PIQ
(ポリイミド)の核発生部材を形成することがで
きる。 For example, the nucleation member 104 is prepared by applying a polyimide forming solution ("PIQ" manufactured by Hitachi Chemical Co., Ltd.; non-volatile content concentration 14.5 wt%) onto the substrate 101 for 10 seconds using a spinner coating machine rotating at 3000 rpm, at °C
Heating was performed for 30 minutes to form a 2μ film. Next, a positive resist solution ("AZ1350" manufactured by Shipley) was applied using a spinner and prebaked.
This resist layer was exposed using a band-shaped mask with a mask width of 0.5 mm. Next, developer solution “MF312” containing tetramethylammonium hydroxide
The resist film in the exposed areas and the underlying polyimide film were etched to form through-holes by development, and after washing and drying, the resist film in the last exposed areas was removed using methyl ethyl ketone. After that, at 200℃ for 60 minutes,
Cured by heating at 350℃ for 30 minutes, PIQ
(polyimide) nucleation member can be formed.
以下、所定温度で強誘電特性を示す液晶材料
DOBAMBCの場合を例にとつて、液晶層103
の配向制御法について第3図を用いて具体的に説
明する。 The following is a liquid crystal material that exhibits ferroelectric properties at a given temperature.
Taking the case of DOBAMBC as an example, the liquid crystal layer 103
The orientation control method will be specifically explained using FIG. 3.
まず、DOBAMBCが封入されている液晶セル
100は、セル全体が均一に加熱されるような加
熱ケース(図示されていない)内にセツトされ
る。次に、セルの平均的温度が例えば90℃となる
よう加熱ケースの温度をコントロールする。この
ときDOBAMBCは、液晶相として、SmC*相も
しくは、SmA相状態となつている。ここで、発
熱体(ヒータ)105に電流を流し、次第に電流
値を上げて行くと、まず発熱体105のごく近傍
のみがSmA→等方相の転移温度である約118℃を
越え、等方相即ち、液相状態に相転移を生じる。
さらに、電流を増大させて行くと、等方相領域が
発熱体105とほぼ平行状態を保ち乍ら拡がつて
行き、やがて全液晶層103が等方相となる。 First, the liquid crystal cell 100 containing DOBAMBC is set in a heating case (not shown) that uniformly heats the entire cell. Next, the temperature of the heating case is controlled so that the average temperature of the cell is, for example, 90°C. At this time, DOBAMBC is in the SmC * phase or SmA phase state as a liquid crystal phase. Here, when a current is applied to the heating element (heater) 105 and the current value is gradually increased, only the vicinity of the heating element 105 exceeds approximately 118°C, which is the transition temperature of SmA → isotropic phase, and isotropic. A phase transition occurs from phase to liquid state.
Further, as the current is increased, the isotropic phase region expands while remaining substantially parallel to the heating element 105, and eventually the entire liquid crystal layer 103 becomes an isotropic phase.
この状態では、液晶セル100の長手方向(第
3図AのC方向)での温度が均一であり、短手方
向(第3図AのB方向)で、核発生部材104か
ら発熱体105の方向へ次第に温度が高くなるよ
うな温度勾配が形成されている。例えば、核発生
部材104の側壁面104′の近傍を例えば約120
℃とし、それより約1.5mm離れた発熱体105の
近傍を例えば約140℃とすることによつて温度勾
配を形成する。 In this state, the temperature in the longitudinal direction (direction C in FIG. 3A) of the liquid crystal cell 100 is uniform, and the temperature is uniform in the longitudinal direction (direction B in FIG. 3A) from the nucleation member 104 to the heating element 105. A temperature gradient is formed in which the temperature gradually increases in the direction. For example, the vicinity of the side wall surface 104' of the nucleation member 104 is
.degree. C., and the temperature near the heating element 105, which is about 1.5 mm away from the temperature, is set to about 140.degree. C., thereby forming a temperature gradient.
次に、セル100に前述の温度勾配を付与した
状態でセル100がセツトされているケースの温
度を90℃より、例えば10℃/hの割合で徐々に温
度を下げるようコントロールすると、第3図Bに
於て、まず核発生部材104の側壁面104′の
近傍における温度が等方相→SmA相転移温度
(約116℃)より低くなり、この領域において
SmA相の核が形成される。このとき、核発生部
材104の側壁面104′及び基板101の面1
09は何れも液晶分子を水平方向に配向させる効
果を有しているため、側壁面104′の近傍で
SmA相が形成されるとき、液晶分子軸が基板1
01の面109内で、かつ側壁面104′の長手
方向に平行な配列を生ずるような強制力を受け、
従つて形成されたSmA相の核は、側壁面10
4′と基板101の面109に対して水平方向配
向したモノドメインとなつている。さらにケース
の温度を下げて行くと、既に形成されている
SmAと等方相との相界面付近における等方相が
その相界面付近のSmAの配列方向と平行方向に
なる様なSmAに相転移を生じ、この結果温度勾
配下で降温を続けると、SmA相のモノドメイン
領域が連続的に広がつて行く。このとき、SmA
相のモノドメイン領域と等方相領域との相界面の
成長速度は、液晶セル100の長手方向(第3図
Aの矢印C方向)に亘つて同一速度になつている
ことが望ましい。ケースの温度が例えば70℃程度
となると、発熱体105の近傍を除いては、液晶
は、ほぼ全域がSmA相に相転移する。 Next, if the temperature of the case in which the cell 100 is set is controlled to be gradually lowered from 90°C at a rate of 10°C/h, for example, with the temperature gradient described above applied to the cell 100, as shown in Fig. 3. In B, first, the temperature near the side wall surface 104' of the nucleation member 104 becomes lower than the isotropic phase→SmA phase transition temperature (approximately 116°C), and in this region
Nuclei of SmA phase are formed. At this time, the side wall surface 104' of the nucleation member 104 and the surface 1 of the substrate 101
09 has the effect of aligning liquid crystal molecules in the horizontal direction, so in the vicinity of the side wall surface 104'
When the SmA phase is formed, the liquid crystal molecular axis is
01 and parallel to the longitudinal direction of the side wall surface 104';
Therefore, the nucleus of the SmA phase formed is located on the side wall surface 10.
4' and a monodomain oriented horizontally with respect to the surface 109 of the substrate 101. If the temperature of the case is further lowered, it is already formed.
A phase transition occurs in SmA such that the isotropic phase near the phase interface between SmA and the isotropic phase becomes parallel to the alignment direction of SmA near the phase interface, and as a result, as the temperature continues to decrease under the temperature gradient, SmA The monodomain region of the phase expands continuously. At this time, SmA
It is desirable that the growth rate of the phase interface between the monodomain region and the isotropic phase region is the same in the longitudinal direction of the liquid crystal cell 100 (direction of arrow C in FIG. 3A). When the temperature of the case reaches, for example, about 70° C., almost the entire area of the liquid crystal, except for the vicinity of the heating element 105, undergoes a phase transition to the SmA phase.
次いで、発熱体105に流している電流を徐々
に下げて、温度勾配を解除すると、液晶セル10
0の温度は、全体が均一に70℃となり、液晶は
SmC*相に相転移する。このとき、発熱体105
の近傍における液晶の分子配列がランダム状態と
なることがあるが、電極102と102′が形成
されている領域に於ては、均一なモノドメインと
なつている。 Next, when the current flowing through the heating element 105 is gradually lowered to eliminate the temperature gradient, the liquid crystal cell 10
The temperature at 0 is 70°C uniformly throughout, and the liquid crystal is
Phase transition to SmC * phase. At this time, the heating element 105
Although the molecular arrangement of the liquid crystal in the vicinity of the electrodes 102 and 102' may be in a random state, it is a uniform monodomain in the region where the electrodes 102 and 102' are formed.
以上述べた液晶の配向方向に於ては、重要な点
は、第3図AにおけるB方向にはできるだけ大き
な温度勾配を与えることが望ましいが、C方向に
関しては、温度が均一となつていることである。
この点を第4図A〜Dを用いて説明する。すなわ
ち、第4図Aは、発熱体105を帯状形状にして
素子を形成し、この素子に前述の如き方法で
SmA相を形成する時の徐冷による降温過程での
SmA相領域の成長過程を模式的に示している。 Regarding the orientation direction of the liquid crystal described above, the important point is that it is desirable to provide as large a temperature gradient as possible in the B direction in FIG. 3A, but it is desirable that the temperature be uniform in the C direction. It is.
This point will be explained using FIGS. 4A to 4D. That is, in FIG. 4A, an element is formed by making the heating element 105 into a band shape, and this element is formed by the method described above.
During the temperature decreasing process due to slow cooling when forming the SmA phase,
The growth process of the SmA phase region is schematically shown.
図中、201はSmA相領域202と等方相領
域203の相界面を表わしている。発熱体105
が図示する如く均一幅の直線的形状の時には、ケ
ース(図示せず)に液晶セル100がセツトされ
ていると、ケースに特別の工夫がない限り、液晶
セル100の長手方向においてその中央部Dに較
べ端部Eの方で温度が低くなるために、相界面2
01は中央部Dの付近では核発生部材104の側
壁面104′にほぼ平行に成長するが、その端部
Eでは図示する如く傾きをもつて成長することに
なる。第4図Aで示す端部Eの領域と中央部Dの
領域における液晶分子の配列状態をそれぞれ第4
図Bと第4図C模式的に示す。 In the figure, 201 represents the phase interface between the SmA phase region 202 and the isotropic phase region 203. Heating element 105
When the liquid crystal cell 100 is set in a case (not shown) and the liquid crystal cell 100 has a linear shape with a uniform width as shown in the figure, unless the case is specially designed, the central part D of the liquid crystal cell 100 in the longitudinal direction is Since the temperature is lower at the end E than at the phase interface 2
01 grows almost parallel to the side wall surface 104' of the nucleation member 104 near the center D, but grows at an angle at the end E as shown in the figure. The alignment state of liquid crystal molecules in the edge E region and the center D region shown in FIG.
Figures B and 4C are schematically shown.
第4図Bに示す如く、端部Eの領域における
SmA相202は、液晶分子長軸方向202′を示
している。同図よりわかるように、側壁面10
4′と相界面201が平行状態より大きく傾いて
いる場合(傾き角θ1とする)には、液晶分子20
2′の配向方向は側壁面104′と平行とはなら
ず、角度θ2だけ傾いてしまう(θ2≒θ1)。これは、
相界面201の近傍において、SmA相が成長し
ていくとき、液晶分子202は、SmA相の成長
方向と垂直な方向に配向する傾向があるためと推
測される。さらに、相界面201の傾き角θ1が急
激に変化する領域では、液晶分子が整合すること
が出きず、配向方向の大きく異る別のドメインに
別かれ、204に示すような欠陥ラインが出現す
る。一方、第4図Cに示すように、中央部Dの領
域におけるSmA相202は、側壁面104′と相
界面201が略平行方向の液晶分子軸方向20
2′となり、液晶分子はやはり平行で均一なモノ
ドメインのSmA相202が形成される。 As shown in FIG. 4B, in the region of end E.
The SmA phase 202 has a long axis direction 202' of liquid crystal molecules. As can be seen from the figure, the side wall surface 10
4' and the phase interface 201 are tilted to a greater extent than parallel (the tilt angle is θ 1 ), the liquid crystal molecules 20
The orientation direction of 2' is not parallel to the side wall surface 104', but is inclined by an angle θ 2 (θ 2 ≈θ 1 ). this is,
This is presumed to be because when the SmA phase grows near the phase interface 201, the liquid crystal molecules 202 tend to align in a direction perpendicular to the growth direction of the SmA phase. Furthermore, in a region where the tilt angle θ 1 of the phase interface 201 changes rapidly, the liquid crystal molecules are unable to align and are separated into different domains with greatly different alignment directions, resulting in the appearance of defect lines as shown in 204. do. On the other hand, as shown in FIG. 4C, in the SmA phase 202 in the central region D, the side wall surface 104' and the phase interface 201 are parallel to each other in the liquid crystal molecule axis direction 202.
2', the liquid crystal molecules are parallel and a uniform monodomain SmA phase 202 is formed.
第4図Dは、以上の点に鑑みて改良された発熱
体105の形状を示すものである。図に示すよう
に発熱体105の端部に於てヒータパターンの幅
を狭くすることにより、その端部に於ける発熱体
の抵抗値を上げ、その端部での発熱量を上げるこ
とによつて、配向セル100における長手方向で
の温度を均一化することができる。このため、
SmA相202と等方相203との相界面201
は側壁面201と平行となり、全体として均一な
モノドメインが得られる。 FIG. 4D shows the shape of the heating element 105 that has been improved in view of the above points. As shown in the figure, by narrowing the width of the heater pattern at the end of the heating element 105, the resistance value of the heating element at that end is increased, and the amount of heat generated at that end is increased. Therefore, the temperature in the longitudinal direction of the alignment cell 100 can be made uniform. For this reason,
Phase interface 201 between SmA phase 202 and isotropic phase 203
is parallel to the side wall surface 201, and a uniform monodomain is obtained as a whole.
さて、以上述べた工程によつて配向は完成され
るわけであるが、モノドメインが一見均一に完全
されているようでも、実際には電極102―10
2′間に電圧を印加して、液晶光学変調素子とし
てのスイツチング特性を調べてみると、光学的コ
ントラストや応答速度の領域による不均一性が生
ずる場合がある。このような現象は、配向時に設
定された温度勾配による構造的なひずみによるも
のと思われる。これに対しては、配向工程終了
後、一担ケースの温度を上昇させ、液晶をSmC*
相よりSmA相に一担相転移させ、その後再び
SmC*状態へとケースの温度を徐々に下げて行く
ことにより、構造緩和によつて前述の如きひずみ
が解消される効果がある。 Now, the alignment is completed through the steps described above, but even though the monodomains appear to be uniformly perfect, in reality, the electrodes 102-10
When a voltage is applied between 2' and the switching characteristics as a liquid crystal optical modulation element are investigated, non-uniformity may occur depending on the region of optical contrast or response speed. This phenomenon is thought to be due to structural distortion caused by the temperature gradient set during orientation. To deal with this, after the alignment process is completed, the temperature of the case is raised and the liquid crystal is SmC *
One phase transition from phase to SmA phase, and then again
Gradually lowering the temperature of the case to the SmC * state has the effect of eliminating the aforementioned distortion due to structural relaxation.
第5図は、本発明に基づく別の実施例を示した
ものであり、基板101の裏側に発熱体105′
を別途設けている。発熱体105′は液晶セル1
00全体を加熱するものであつて、たとえば、液
晶光学変調素子として実際に使用した場合、何ら
かのトラブルで液晶の配向に乱れが生じた場合
に、発熱体105と共用することにより、所定の
工程を踏んで再配向させることが可能である。こ
の発熱体105′は、基板101′の裏側にも設け
ることが勿論可能である。すなわち、前述の如き
方法で形成されたSmC*相を一担発熱体105′
を加熱して液晶セル100全体をSmA相に相転
移し、その後SmC*相まで徐冷させて再び均一な
モノドメインを形成することができる。 FIG. 5 shows another embodiment based on the present invention, in which a heating element 105' is provided on the back side of the substrate 101.
is provided separately. The heating element 105' is the liquid crystal cell 1
For example, when actually used as a liquid crystal optical modulation element, if the orientation of the liquid crystal is disturbed due to some trouble, it can be used together with the heating element 105 to perform a predetermined process. It is possible to reorient by stepping on it. Of course, this heating element 105' can also be provided on the back side of the substrate 101'. That is, the SmC * phase formed by the method described above is used as the heating element 105'.
is heated to cause the entire liquid crystal cell 100 to undergo a phase transition to the SmA phase, and then slowly cooled to the SmC * phase to form a uniform monodomain again.
第6図に示す液晶セル100は、前述の発熱体
105のかわりに基板101′の外側にITOやNi
―Cr合金薄膜で形成した発熱体110を設けた
具体例を表わしている。この発熱体110の形状
としては、前述の第4図Dに示す形状のものとす
ることが好ましい。 The liquid crystal cell 100 shown in FIG. 6 has ITO or Ni on the outside of the substrate 101' instead of the heating element 105 described above.
-Represents a specific example in which a heating element 110 made of a Cr alloy thin film is provided. The shape of this heating element 110 is preferably the shape shown in FIG. 4D described above.
本発明の液晶素子を形成するにあたり、液晶層
の厚さを所定の値に制御するために、スペーサを
用いることができる。第7図は、そのようなスペ
ーサ構造を有する本発明液晶素子の構成例が示さ
れている。すなわち、第7図に示す液晶素子は、
透明導電パターンを有する電極102を有する基
板101と、この基板101と対向させて配置さ
せた基板101′の間にスペーサ部材113が形
成され、これにより基板101と101′の間に
配置される液晶103の膜厚の均一性を安定なも
のとすることができる。スペーサ部材113は、
電気絶縁性物質を何れか一方の基板の上に所定の
膜厚で塗布した後、フオトリソグラフイ技術によ
つて図示する如くの形状で形成することによつて
得られる。 In forming the liquid crystal element of the present invention, spacers can be used to control the thickness of the liquid crystal layer to a predetermined value. FIG. 7 shows an example of the structure of a liquid crystal element of the present invention having such a spacer structure. That is, the liquid crystal element shown in FIG.
A spacer member 113 is formed between a substrate 101 having an electrode 102 having a transparent conductive pattern and a substrate 101' disposed opposite to this substrate 101, and thereby a liquid crystal disposed between the substrates 101 and 101'. The uniformity of the film thickness of 103 can be made stable. The spacer member 113 is
It is obtained by applying an electrically insulating material to a predetermined thickness on one of the substrates, and then forming it into the shape shown in the figure by photolithography.
この液晶素子を作成するに当つて、前述の如き
方法で発熱体105を加熱することによつて温度
勾配が付与されているDOBMBCの等方相として
から、かかる温度勾配を保持した状態で降温させ
ると、核発生部材104の側壁面104′から
SmA相のモノドメインがスペーサ113の側壁
面113′に向けて成長し、さらに該スペーサ1
13のもう一方の側壁面113″が前述の側壁面
104′と同様に液晶の核発生効果をもつことが
でき、従つてこの側壁面113″から同様にSmA
のモノドメインが成長する。このスペーサ113
は、前述の核発生部材104と同一の物質を用い
てフオトリソ工程中で同時に帯状形状をもつて複
数個で作成することができる。 In producing this liquid crystal element, the heating element 105 is heated in the manner described above to obtain an isotropic phase of DOBMBC with a temperature gradient, and then the temperature is lowered while maintaining the temperature gradient. and from the side wall surface 104' of the nucleation member 104.
A monodomain of the SmA phase grows toward the side wall surface 113' of the spacer 113, and furthermore, the spacer 1
The other side wall surface 113'' of No. 13 can have a liquid crystal nucleation effect similarly to the aforementioned side wall surface 104', and therefore SmA can be similarly generated from this side wall surface 113''.
monodomain grows. This spacer 113
can be made in a plurality of belt-shaped pieces at the same time during a photolithography process using the same material as the nucleation member 104 described above.
第8図〜第10図は、本発明の液晶素子の駆動
例を示している。 8 to 10 show examples of driving the liquid crystal element of the present invention.
第8図は、中間に強誘電性液晶化合物が挟まれ
たマトリクス電極構造を有するセル41の模式図
である。42は走査電極群であり、43は信号電
極群である。第9図aとbは、それぞれ選択され
た走査電極42(s)に与えられる電気信号とそ
れ以外の走査電極(選択されない走査電極)42
(n)に与えられる電気信号を示し、第9図cと
dはそれぞれ選択された信号電極43(s)に与
えられる電気信号と選択されない信号電極43
(n)に与えられる電気信号を表わす。第9図a
〜dにおいては、それぞれ横軸が時間を、縦軸が
電圧を表わす。例えば、動画を表示すような場合
には、走査電極群42は遂次、周期的に選択され
る。今、双安定性を有する液晶セルの第1の安定
状態を与えるため閾値電圧をVth1とし、第2の
安定状態を与えるための閾値電圧を−Vth2とす
ると、選択された走査電極42(s)に与えられ
る電気信号は、第9図aに示される如く、位相
(時間)t1ではVを、位相(時間)t2では−Vと
なるような交番する電圧である。又、それ以外の
走査電極42(n)は、第9図bに示す如くアー
ス状態となつており、電気信号Oである。一方、
選択された信号電極43(s)に与えられる電気
信号は第9図cに示される如くVであり、又選択
されない信号電極43(n)に与えられる電気信
号は第9図dに示される如く−Vである。以上に
於て、電圧Vは
V<Vth1<2Vと−V>−Vth2>−2V
を満足する所望の値に設定される。このような電
気信号が与えられたときの各画素に印加される電
圧波形を第10図に示す。第10図a〜dは、そ
れぞれ第8図中の画素A,B,CおよびDと対応
している。すなわち第10図より明らかな如く、
選択された走査線上にある画素Aでは、位相t2に
於て閾値Vth1を越える電圧2Vが印加される。又
同一走査線上に存在する画素Bでは位相t1で閾値
−Vth2を越える電圧−2Vが印加される。従つて、
選択された走査電極線上に於て信号電極が選択さ
れたか否かに応じて、選択された場合には液晶分
子は第1の安定状態に配向を揃え、選択されない
場合には第2の安定状態に配向を揃える。いずれ
にしても各画素の前歴には、関係することはな
い。 FIG. 8 is a schematic diagram of a cell 41 having a matrix electrode structure in which a ferroelectric liquid crystal compound is sandwiched between. 42 is a scanning electrode group, and 43 is a signal electrode group. FIGS. 9a and 9b show the electrical signals applied to the selected scan electrode 42(s) and the other scan electrodes (unselected scan electrodes) 42, respectively.
(n), and FIGS. 9c and 9d show the electrical signals applied to the selected signal electrode 43(s) and the unselected signal electrode 43, respectively.
(n) represents an electrical signal given to Figure 9a
-d, the horizontal axis represents time and the vertical axis represents voltage. For example, when displaying a moving image, the scanning electrode groups 42 are sequentially and periodically selected. Now, if the threshold voltage is Vth 1 to provide the first stable state of the liquid crystal cell having bistability, and the threshold voltage is -Vth 2 to provide the second stable state, then the selected scanning electrode 42 ( The electrical signal applied to s) is an alternating voltage such that it is V at phase (time) t 1 and -V at phase (time) t 2, as shown in FIG. 9a. Further, the other scanning electrodes 42(n) are in a grounded state as shown in FIG. 9b, and have an electrical signal O. on the other hand,
The electrical signal given to the selected signal electrode 43(s) is V as shown in FIG. 9c, and the electrical signal given to the unselected signal electrode 43(n) is V as shown in FIG. 9d. -V. In the above, the voltage V is set to a desired value that satisfies V<Vth 1 <2V and -V>-Vth 2 >-2V. FIG. 10 shows the voltage waveform applied to each pixel when such an electric signal is applied. 10a to 10d correspond to pixels A, B, C, and D in FIG. 8, respectively. In other words, as is clear from Figure 10,
A voltage of 2V exceeding the threshold value Vth1 is applied to the pixel A on the selected scanning line at phase t2 . Further, to the pixel B existing on the same scanning line, a voltage of -2V exceeding the threshold value -Vth2 is applied at phase t1 . Therefore,
Depending on whether or not a signal electrode is selected on the selected scanning electrode line, if selected, the liquid crystal molecules are aligned in the first stable state, and if not selected, the liquid crystal molecules are aligned in the second stable state. Align the orientation. In any case, it has nothing to do with the previous history of each pixel.
一方、画素CとDに示される如く、選択されな
い走査線上では、すべての画素CとDに印加され
る電圧は+V又は−Vであつて、いずれも閾値電
圧を越えない。従つて、各画素CとDにおける液
晶分子は、配向状態を変えることなく前回走査さ
れたときの信号状態に対応した配向を、そのまま
保持している。即ち、走査電極が選択されたとき
にその一ライン分の信号の書き込みが行われ、一
フレームが終了して次回選択されるまでの間は、
その信号状態を保持し得るわけである。従つて、
走査電極数が増えても、実質的なデユーテイ比は
かわらず、コントラストの低下とクロストーク等
は全く生じない。この際、電圧値Vの値及び位相
(t1+t2)=Tの値としては、用いられる液晶材料
やセルの厚さにも依存するが、通常3ボルト〜70
ボルトで0.1μsec〜2msecの範囲が用いられる。
従つて、この場合では選択された走査電極に与え
られる電気信号が第1の安定状態(光信号に変換
されたとき「明」状態であるとする)から第2の
安定状態(光信号に変換されたとき「暗」状態で
あるとする)へ、又はその逆のいずれの変化をも
起すことができる。 On the other hand, as shown in pixels C and D, on unselected scanning lines, the voltages applied to all pixels C and D are +V or -V, neither of which exceeds the threshold voltage. Therefore, the liquid crystal molecules in each pixel C and D maintain the orientation corresponding to the signal state when scanned last time without changing the orientation state. That is, when a scanning electrode is selected, signals for one line are written, and from the end of one frame until the next selection,
This means that the signal state can be maintained. Therefore,
Even if the number of scanning electrodes increases, the actual duty ratio remains the same, and there is no reduction in contrast or crosstalk. At this time, the value of the voltage value V and the value of the phase (t 1 + t 2 )=T depend on the liquid crystal material used and the thickness of the cell, but are usually 3 volts to 70 volts.
A range of 0.1 μsec to 2 msec in volts is used.
Therefore, in this case, the electrical signal applied to the selected scanning electrode changes from the first stable state (assumed to be in the "bright" state when converted to an optical signal) to the second stable state (assumed to be a "bright" state when converted to an optical signal). The change can occur either to the "dark" state when the dark state is reached or vice versa.
第1図および第2図は、本発明で用いる液晶セ
ルを表わす斜視図である。第3図Aは、本発明で
用いる液晶素子の平面図で、第3図BはそのA―
A′断面図である。第4図A、第4図Bおよび第
4図Cは液晶の成長過程を模式的に表わす平面図
である。第4図Dは、本発明で用いる液晶セルの
別の態様を表わす平面図である。第5図、第6図
および第7図は、本発明の液晶セルの好ましい態
様を表わす断面図である。第8図は、本発明で用
いる光学変調素子の電極構造を模式的に示す平面
図である。第9図a〜dは、本発明の光学変調素
子を駆動するための信号を示す説明図である。第
10図a〜dは、各画素に印加される電圧波形を
示す説明図である。
100;液晶セル、101,101′;基板、
102,102′;電極、103;液晶層、10
4;核発生部材、104′;核発生部材の側壁面、
105,105′,110;発熱体、106;接
着剤、107,107′,107″;リード線、1
08,108′;偏光子、109;基板101の
面、112;絶縁膜、113;スペーサ部材。
1 and 2 are perspective views showing a liquid crystal cell used in the present invention. FIG. 3A is a plan view of a liquid crystal element used in the present invention, and FIG. 3B is a plan view of the liquid crystal element used in the present invention.
It is an A′ cross-sectional view. FIG. 4A, FIG. 4B, and FIG. 4C are plan views schematically showing the growth process of liquid crystal. FIG. 4D is a plan view showing another embodiment of the liquid crystal cell used in the present invention. FIG. 5, FIG. 6, and FIG. 7 are cross-sectional views showing preferred embodiments of the liquid crystal cell of the present invention. FIG. 8 is a plan view schematically showing the electrode structure of the optical modulation element used in the present invention. FIGS. 9a to 9d are explanatory diagrams showing signals for driving the optical modulation element of the present invention. FIGS. 10a to 10d are explanatory diagrams showing voltage waveforms applied to each pixel. 100; liquid crystal cell, 101, 101'; substrate,
102, 102′; electrode, 103; liquid crystal layer, 10
4; nucleation member, 104'; side wall surface of nucleation member,
105, 105', 110; heating element, 106; adhesive, 107, 107', 107''; lead wire, 1
08, 108';polarizer;109; surface of substrate 101; 112; insulating film; 113; spacer member.
Claims (1)
核発生部材を配置し、該核発生部材に対して間隔
を置いて配置した帯状発熱体の長手方向における
端部付近の発熱量をその中央部付近の発熱量より
大きく設定することによつて、該核発生部材から
帯状発熱体に向けて高温となる温度勾配を形成
し、一軸異方相と該相より高温側の別の相との相
界面を核発生部材に対して平行となる様に該温度
勾配を維持しながら液晶の温度を降温させること
を特徴とするカイラルスメクテイツク液晶の配向
制御方法。1. A liquid crystal that produces a uniaxially anisotropic phase and a nucleation member are arranged between a pair of substrates, and the amount of heat generated near the end in the longitudinal direction of a band-shaped heating element placed at a distance from the nucleation member is calculated from the center of the nucleation member. By setting the calorific value to be larger than that near the nucleation member, a temperature gradient is formed that increases the temperature from the nucleation member to the band-shaped heating element, and the uniaxially anisotropic phase and another phase on the higher temperature side than the nucleation member are formed. A method for controlling the alignment of a chiral smect liquid crystal, comprising lowering the temperature of the liquid crystal while maintaining the temperature gradient so that the phase interface is parallel to a nucleation member.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22262083A JPS60114824A (en) | 1983-11-25 | 1983-11-25 | Control method of orientation of liquid crystal and element used by said method |
| US06/671,916 US4781441A (en) | 1983-11-25 | 1984-11-15 | Method of controlling orientation of liquid crystal, device used therein and liquid crystal device produced thereby |
| FR848417885A FR2555789B1 (en) | 1983-11-25 | 1984-11-23 | METHOD AND DEVICE FOR CONTROLLING THE ORIENTATION OF A LIQUID CRYSTAL AND LIQUID CRYSTAL DEVICE |
| DE19843443011 DE3443011A1 (en) | 1983-11-25 | 1984-11-26 | METHOD FOR CONTROLLING THE ORIENTATION OF LIQUID CRYSTALS, DEVICE FOR IMPLEMENTING THE METHOD, AND THE LIQUID CRYSTAL DEVICE PRODUCED BY IT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22262083A JPS60114824A (en) | 1983-11-25 | 1983-11-25 | Control method of orientation of liquid crystal and element used by said method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60114824A JPS60114824A (en) | 1985-06-21 |
| JPS6345571B2 true JPS6345571B2 (en) | 1988-09-09 |
Family
ID=16785303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22262083A Granted JPS60114824A (en) | 1983-11-25 | 1983-11-25 | Control method of orientation of liquid crystal and element used by said method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60114824A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0785144B2 (en) * | 1985-08-01 | 1995-09-13 | セイコー電子工業株式会社 | Method for manufacturing smectic liquid crystal device |
| JP2585804B2 (en) * | 1989-07-28 | 1997-02-26 | ヘキストジャパン株式会社 | Liquid crystal display device |
| JP3667215B2 (en) | 1999-08-31 | 2005-07-06 | キヤノン株式会社 | Single crystalline thin film and method for producing the same |
| DE10064921A1 (en) | 2000-12-23 | 2002-07-18 | Siemens Ag | Liquid crystal display with a heater |
-
1983
- 1983-11-25 JP JP22262083A patent/JPS60114824A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60114824A (en) | 1985-06-21 |
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