JPS6347341B2 - - Google Patents
Info
- Publication number
- JPS6347341B2 JPS6347341B2 JP58119403A JP11940383A JPS6347341B2 JP S6347341 B2 JPS6347341 B2 JP S6347341B2 JP 58119403 A JP58119403 A JP 58119403A JP 11940383 A JP11940383 A JP 11940383A JP S6347341 B2 JPS6347341 B2 JP S6347341B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- electrode
- diameter
- glass
- end diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/17—Containers or parts thereof characterised by their materials
- H10W76/18—Insulating materials, e.g. resins, glasses or ceramics
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明はDHD（double heat sink diode）型封
止ダイオード電極に関する。特に、リード線を一
定長に切断後、小径部と大径部を有する電極を釘
打ち加工または成形加工によつて組合せて得られ
るリードレスダイオード電極において、小径部と
大径部との釘打ち加工または成形加工の際に該小
径部を傾斜状に加工成形しガラス封止後のガラス
ラツクを防止したダイオード電極部品に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a DHD (double heat sink diode) type sealed diode electrode. In particular, in leadless diode electrodes obtained by cutting a lead wire to a certain length and then combining electrodes having a small diameter part and a large diameter part by nailing or molding, the nailing of the small diameter part and the large diameter part is performed. This invention relates to a diode electrode component in which the small diameter portion is formed into an inclined shape during processing or molding to prevent glass cracks after glass sealing.
従来市販されているダイオード電極の殆んど
は、第１図に示すように両端部にリード線１を具
備した電極２間に半導体素子３を装着し、電極２
の周囲を封止ガラス４にて封止したDHD型ガラ
ス封止ダイオード電極である。この種の電極を有
する該ダイオードをプリント基板等に装着する際
には、プリント基板の装着孔に細長いリード線１
を挿入して用いる。 Most conventional commercially available diode electrodes have a semiconductor element 3 mounted between electrodes 2 having lead wires 1 at both ends, as shown in FIG.
This is a DHD type glass-sealed diode electrode whose periphery is sealed with a sealing glass 4. When mounting the diode having this type of electrode on a printed circuit board, etc., insert a long thin lead wire 1 into the mounting hole of the printed circuit board.
Insert and use.
また、プリント基板への該ダイオードの装着を
容易にした第２図に示すようなリード線を有しな
いDHD型ガラス封止リードレスダイオードも考
案され、その需要が次第に急増しつつある。この
ようなリードレスダイオードの電極２には第３図
に示すようなジユメツト線が使用される。第３図
はジユメツト線の拡大断面図を示す。ジユメツト
線は心線５（例えば、Fe−Ni線）に銅層６を被
覆しこの表面に亜酸化銅（Cu2O）層７を施こし
て成る。 In addition, a DHD type glass-sealed leadless diode without lead wires, as shown in FIG. 2, which facilitates mounting of the diode on a printed circuit board, has been devised, and the demand for this is rapidly increasing. For the electrode 2 of such a leadless diode, a composite wire as shown in FIG. 3 is used. FIG. 3 shows an enlarged sectional view of the diamond line. The composite wire is made by coating a core wire 5 (for example, a Fe--Ni wire) with a copper layer 6, and applying a cuprous oxide (Cu 2 O) layer 7 on the surface of the copper layer 6.
すなわち、リードレスダイオードの電極２には
該ジユメツト線を一定長に切断し、釘打ち加工を
施こして第４図に示すような小径部８と大径部９
とからなる電極２を使用している。 That is, for the electrode 2 of the leadless diode, the wire is cut to a certain length and nailed to form a small diameter part 8 and a large diameter part 9 as shown in FIG.
An electrode 2 consisting of the following is used.
この電極２間の中央部に第２図に示すようにシ
リコン等の半導体素子３を装着し、電極２の周囲
を封止ガラス４で封止することによつて該ダイオ
ードを得ている。 As shown in FIG. 2, a semiconductor element 3 made of silicon or the like is mounted in the center between the electrodes 2, and the periphery of the electrodes 2 is sealed with a sealing glass 4 to obtain the diode.
しかしながら、この方式のガラス封止では、大
径部９の内側面と封止ガラス４の端面が第２図に
Ａで示すように直接接着し、釘打ち時の変形の際
に銅被覆層６と心線５の割合が小径部８の割合よ
り小さくなつたりするため、ガラスとの膨脹係数
に差が発生したり、心線５のFe−Ni合金が強加
工により膨脹係数が小さくなつたりするため、ガ
ラス封止後特に半田付時にガラスクラツクが発生
することが多く、これがリーク不良の原因とな
り、ダイオードの信頼性を大きく低下させる欠点
がある。 However, in this type of glass sealing, the inner surface of the large diameter portion 9 and the end surface of the sealing glass 4 are directly bonded as shown by A in FIG. Since the ratio of the core wire 5 is smaller than the ratio of the small diameter portion 8, a difference occurs in the coefficient of expansion with glass, and the Fe-Ni alloy of the core wire 5 is subjected to heavy processing, resulting in a decrease in the coefficient of expansion. Therefore, glass cracks often occur after glass sealing, especially during soldering, which causes leakage defects and has the drawback of greatly reducing the reliability of the diode.
本発明はこの点を改良するもので、封止ガラス
端面が全面変形加工を受けた大径部に直接接触す
ることを防止し、膨脹係数の差により発生するガ
ラスクラツクを防止することができるダイオード
電極部品を提供することを目的とする。 The present invention improves this point by providing a diode electrode that prevents the end face of the sealing glass from coming into direct contact with the large-diameter portion that has been fully deformed, and prevents glass cracks caused by differences in expansion coefficients. The purpose is to provide parts.
本発明は、大径部と小径部とを有するリードレ
スダイオード電極において該小径部を傾斜部を形
成したことを特徴とする。 The present invention is characterized in that in a leadless diode electrode having a large diameter part and a small diameter part, the small diameter part is formed with an inclined part.
本発明の一実施例を図面に基づいて説明する。
第５図は本発明一実施例電極の拡大斜視図を示
す。第６図は第５図の電極を用いてダイオードを
組立たときの要部断面図を示す。第６図は本発明
の要部を明確にするため要部が誇張して描かれて
いる。 An embodiment of the present invention will be described based on the drawings.
FIG. 5 shows an enlarged perspective view of an electrode according to an embodiment of the present invention. FIG. 6 shows a cross-sectional view of essential parts when a diode is assembled using the electrodes shown in FIG. 5. In FIG. 6, the main parts of the present invention are exaggerated to make them clear.
すなわち、釘打ち用ジユメツト線として0.5〜
1.5mmφの素線を２〜３mm長さに切断したのち、
釘打ち加工において小径部８の周囲に本発明の特
徴とする傾斜部１１を形成し第５図に示す電極１
３を得る。この電極１３に封止ガラス４を挿入
し、次に半導体素子３および他方の電極１３′を
上部より乗せ圧力を加えながら温度が約640℃の
バツチ炉あるいは連続炉を通してダイオードを形
成する。 In other words, 0.5~ as a gauge wire for nailing.
After cutting the 1.5mmφ wire into 2~3mm length,
The electrode 1 shown in FIG.
Get 3. A sealing glass 4 is inserted into this electrode 13, and then the semiconductor element 3 and the other electrode 13' are placed from above and the diode is formed by passing through a batch furnace or continuous furnace at a temperature of about 640° C. while applying pressure.
ここで、傾斜部１１の始端径d2、終端径d1およ
び封止ガラス４の内径Ｄ（第７図に示す。）の間は
d1＜Ｄ＜d2の関係を有するように（より好ましく
は、第６図に示すように、Ｄがd1とd2の平均値よ
りも更に20％〜30％d2に近い値となるように）形
成される為、本電極１３を用いれば大径部９の内
側面と封止ガラス４の端面が直接接触することは
なくガラスクラツクの発生が防止される。特に、
傾斜部１１の始端径d2と終端径d1との関係はd1＞
９／10d2であることが好ましい。 Here, between the starting end diameter d 2 of the inclined portion 11, the terminal end diameter d 1 and the inner diameter D of the sealing glass 4 (shown in FIG. 7),
d 1 <D < d 2 (more preferably, as shown in FIG. 6, D is 20% to 30% closer to d 2 than the average value of d 1 and d 2 ). Therefore, if this electrode 13 is used, the inner surface of the large diameter portion 9 and the end surface of the sealing glass 4 will not come into direct contact with each other, thereby preventing the occurrence of glass cracks. especially,
The relationship between the starting end diameter d 2 and the ending end diameter d 1 of the inclined portion 11 is d 1 >
Preferably it is 9/ 10d2 .
d1＜９／10d2とすると加工時の変形が大きくなり
表面の亜酸化銅層７が脱落することがありダイオ
ードの信頼性が低下する。また、本発明による電
極１３を用いてダイオードを組立てた場合には従
来の電極を用いてダイオードを組立てた場合に
0.1〜10％の割合で発生していたガラスクラツク
がまつたく認められない。 When d 1 <9/10 d 2 , deformation during processing becomes large and the cuprous oxide layer 7 on the surface may fall off, reducing the reliability of the diode. Furthermore, when a diode is assembled using the electrode 13 according to the present invention, it is different from when a diode is assembled using a conventional electrode.
Glass cracks, which occur at a rate of 0.1 to 10%, are completely absent.
以上説明したように本発明によれば、電極の小
径部周囲に傾斜部を形成することとしたので、ガ
ラスクラツクの発生を防止することができる。ま
た、プリント基板等への装着も従来電極と同様に
容易に行うことができる等の効果を有する。 As explained above, according to the present invention, since the inclined portion is formed around the small diameter portion of the electrode, it is possible to prevent the occurrence of glass cracks. Further, it has the advantage that it can be easily attached to a printed circuit board or the like in the same way as conventional electrodes.
第１図は従来のリード線付きDHD型ダイオー
ドの断面図。第２図は従来のリードレスDHD型
ダイオードの断面図。第３図はジユメツト線の拡
大断面図。第４図は第２図に示したダイオードの
電極の拡大斜視図。第５図は本発明一実施例電極
の拡大斜視図。第６図は第５図の電極を用いたダ
イオードの断面図。第７図は封止ガラスの断面
図。
２……電極、３……半導体素子、４……封止ガ
ラス、８……小径部、９……大径部、１１……傾
斜部。
Figure 1 is a cross-sectional view of a conventional DHD type diode with lead wires. Figure 2 is a cross-sectional view of a conventional leadless DHD diode. FIG. 3 is an enlarged cross-sectional view of the diamond line. FIG. 4 is an enlarged perspective view of the electrode of the diode shown in FIG. 2. FIG. 5 is an enlarged perspective view of an electrode according to an embodiment of the present invention. FIG. 6 is a cross-sectional view of a diode using the electrode of FIG. 5. FIG. 7 is a cross-sectional view of the sealing glass. 2... Electrode, 3... Semiconductor element, 4... Sealing glass, 8... Small diameter part, 9... Large diameter part, 11... Inclined part.
Claims (1)
ることによつて得られる、大径部とこれに連続す
る小径部を有するリードレスダイオード用電極で
あつて、 前記小径部がテーパー状に形成され、 前記小径部の始端径d2と終端径d1とダイオード
を封止するガラスチユーブの内径Ｄとが d2＞Ｄ＞d1 の関係に形成され、 前記テーパー部分の形状が前記ガラスチユーブ
への該電極挿入時に前記テーパー部分の途中で前
記ガラスチユーブの端面を封止するように形成さ
れた ことを特徴とするダイオード電極部品。 ２ 前記始端径d2と前記終端径d1とが d1＞９／10・d2 の関係を有することを特徴とする特許請求の範囲
第１項に記載のダイオード電極部品。 ３ 前記内径Ｄは前記終端径d1と前記始端径d2と
の平均値よりも更に20％〜30％前記始端径d2に近
い値であることを特徴とする特許請求の範囲第１
項または第２項いずれかに記載のダイオード電極
部品。[Scope of Claims] 1. An electrode for a leadless diode, which is obtained by nailing or shaping a composite wire, and has a large diameter part and a continuous small diameter part, the small diameter part being tapered. The starting end diameter d 2 and the terminal end diameter d 1 of the small diameter portion and the inner diameter D of the glass tube sealing the diode are formed in a relationship of d 2 >D > d 1 , and the shape of the tapered portion is A diode electrode component, characterized in that the diode electrode component is formed so as to seal an end face of the glass tube in the middle of the tapered portion when the electrode is inserted into the glass tube. 2. The diode electrode component according to claim 1, wherein the starting end diameter d 2 and the ending end diameter d 1 have a relationship of d 1 >9/10·d 2 . 3. Claim 1, wherein the inner diameter D is 20% to 30% closer to the starting end diameter d2 than the average value of the terminal end diameter d1 and the starting end diameter d2 .
The diode electrode component according to any one of Items 1 and 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119403A JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58119403A JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6010760A JPS6010760A (en) | 1985-01-19 |
| JPS6347341B2 true JPS6347341B2 (en) | 1988-09-21 |
Family
ID=14760618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58119403A Granted JPS6010760A (en) | 1983-06-30 | 1983-06-30 | Electrode part for diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6010760A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050340B2 (en) * | 1980-02-26 | 1985-11-08 | ソニー株式会社 | semiconductor element |
-
1983
- 1983-06-30 JP JP58119403A patent/JPS6010760A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6010760A (en) | 1985-01-19 |
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