JPS6352478B2 - - Google Patents
Info
- Publication number
- JPS6352478B2 JPS6352478B2 JP12341379A JP12341379A JPS6352478B2 JP S6352478 B2 JPS6352478 B2 JP S6352478B2 JP 12341379 A JP12341379 A JP 12341379A JP 12341379 A JP12341379 A JP 12341379A JP S6352478 B2 JPS6352478 B2 JP S6352478B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting layer
- light
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Description
本発明はGaAlAs系高輝度発光ダイオード等の
混晶系発光装置の素子構造に関するものである。
第１図にGaAlAs発光ダイオードの構成を示
す。
ｎ−GaAs基板１上に発光層２としてｎ−Ga1
− xAlxAs窓層３としてｐ−Ga1− yAlyAs（ｘ＜
ｙ）がエピタキシヤル成長され、ｎ側電極４及び
ｐ側電極５が形成されている。この発光ダイオー
ドに通電すると、発光層２と窓層３の混晶比の条
件（ｘ＜ｙ）より発光層で発生した光は窓層３で
は吸収されず効率良く外部へ導出されるはずであ
るが、実際には吸収が多く、非常に低輝度の発光
しか得られていない。これは第２図に示す如く、
成長層のAlプロフアイルに起因するものと考え
られる。第２図は成長層厚に対するAl濃度を示
す。T1は基板、t2は発光層、t3は窓層である。即
ち、ｎ−GaAs基板１と発光層２の間及び発光層
２と窓層３の間の窓層３側にAl量の少ない領域
（図中に斜線部分で示す）が存在し、発光層２で
の発光がこの領域で吸収されるためである。この
領域の吸収係数を105／ｍ、この領域の厚さを1μ
ｍとすれば発光の減衰はe-105×10-4＝１／e10となり、
ほとんど光は外部へ導出できないことになる。
本発明は上記問題点に鑑み、窓層３に少量のＰ
（リン）を添加することにより、上述のAl量の少
ない光吸収領域を形成することなく外部微分効率
のよい発光ダイオードを得ることを目的とする。
以下、本発明を実施例に従つて図面を参照しな
がら詳説する。
スライデイング式の液相エピタキシヤル法で発
光層２及び窓層３をｎ−GaAs基板１上にエピタ
キシヤル成長させる。成長用融液の組成はGa5ｇ
に対して下表の通りである。
The present invention relates to an element structure of a mixed crystal light emitting device such as a GaAlAs high brightness light emitting diode. Figure 1 shows the configuration of a GaAlAs light emitting diode. n-Ga 1 as a light-emitting layer 2 on an n-GaAs substrate 1
− x Al x As As the window layer 3, p-Ga 1 − y Al y As (x<
y) is epitaxially grown, and an n-side electrode 4 and a p-side electrode 5 are formed. When this light emitting diode is energized, the light generated in the light emitting layer will not be absorbed by the window layer 3 and should be efficiently guided to the outside due to the condition of the mixed crystal ratio of the light emitting layer 2 and the window layer 3 (x<y). However, in reality, there is a lot of absorption, and only very low-luminance light emission is obtained. This is shown in Figure 2,
This is thought to be due to the Al profile of the growth layer. Figure 2 shows the Al concentration versus growth layer thickness. T 1 is the substrate, t 2 is the light emitting layer, and t 3 is the window layer. That is, there are regions with a small amount of Al (indicated by hatched areas in the figure) on the window layer 3 side between the n-GaAs substrate 1 and the light emitting layer 2 and between the light emitting layer 2 and the window layer 3, and the light emitting layer 2 This is because the light emitted in the area is absorbed in this area. The absorption coefficient of this region is 10 5 /m, and the thickness of this region is 1μ.
If m, the attenuation of light emission will be e -105 x 10-4 = 1/e 10 , which means that almost no light can be extracted to the outside. In view of the above problems, the present invention includes a small amount of P in the window layer 3.
By adding (phosphorus), the purpose is to obtain a light emitting diode with good external differential efficiency without forming the above-mentioned light absorption region with a small amount of Al. Hereinafter, the present invention will be explained in detail according to embodiments with reference to the drawings. A light emitting layer 2 and a window layer 3 are epitaxially grown on an n-GaAs substrate 1 by a sliding liquid phase epitaxial method. The composition of the growth melt is Ga5g.
The results are as shown in the table below.
【表】
成長温度を800℃迄昇温し、毎分１℃の降温速
度で発光層２を15μｍ、窓層３を30μｍ成長させ
る。
上記工程を介して得られたウエハーにｎ側電極
４及びｐ側電極５を蒸着形成して発光ダイオード
を作製する。
この発光ダイオードに順方向電流20ｍＡで
200mcdの輝度が得られた。このように注入電流
に対して輝度の高い発光が得られる理由は、窓層
３の発光層２との接合界面近傍で形成されるAl
量の少ない光吸収領域に起因して減少したAl混
晶比の分だけＰを添加してバンドギヤツプの減少
を抑制したことによる効果がある。
尚、上記実施例はGaAlAs系発光ダイオードに
ついて説明したが本発明はこれに限らず他の混晶
系発光素子についても適用できる。[Table] The growth temperature was increased to 800°C, and the luminescent layer 2 was grown to 15 μm and the window layer 3 to 30 μm at a cooling rate of 1°C per minute. An n-side electrode 4 and a p-side electrode 5 are formed by vapor deposition on the wafer obtained through the above steps to fabricate a light emitting diode. This light emitting diode has a forward current of 20mA.
A brightness of 200mcd was obtained. The reason why high-brightness light emission is obtained with respect to the injected current is that the Al formed near the bonding interface between the window layer 3 and the light-emitting layer 2
There is an effect of suppressing the decrease in the band gap by adding P by the amount corresponding to the Al mixed crystal ratio decreased due to the small amount of light absorption region. Although the above embodiments have been described with respect to GaAlAs light emitting diodes, the present invention is not limited thereto and can be applied to other mixed crystal light emitting elements.
第１図はGaAlAs発光ダイオードの構成を示す
構成図である。第２図は成長層厚とAl濃度の関
係を示す説明図である。
１……ｎ−GaAs基板、２……発光層、３……
窓層。
FIG. 1 is a block diagram showing the structure of a GaAlAs light emitting diode. FIG. 2 is an explanatory diagram showing the relationship between growth layer thickness and Al concentration. 1... n-GaAs substrate, 2... light emitting layer, 3...
window layer.
Claims (1)
成る発光層と該発光層に接合された光取出用窓層
との積層体を基板上に成長形成して成る半導体発
光装置において、前記窓層は前記発光層よりアル
ミニウム混晶比が高く設定されかつ前記発光層と
の接合界面に形成されるアルミニウム量の少ない
光吸収性領域のアルミニウム減少程度に対応して
バンドギヤツプの減少を抑制する不純物であるリ
ンが添加されていることを特徴とする半導体発光
装置。1. In a semiconductor light emitting device comprising a laminate formed on a substrate of a light emitting layer made of a gallium aluminum arsenide mixed crystal semiconductor and a light extraction window layer bonded to the light emitting layer, the window layer is formed on the light emitting layer. Phosphorus, which is an impurity, is added to suppress the reduction of the band gap in response to the degree of aluminum reduction in the light-absorbing region where the aluminum mixed crystal ratio is set higher and the amount of aluminum is small formed at the bonding interface with the light emitting layer. A semiconductor light emitting device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12341379A JPS5646575A (en) | 1979-09-25 | 1979-09-25 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12341379A JPS5646575A (en) | 1979-09-25 | 1979-09-25 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5646575A JPS5646575A (en) | 1981-04-27 |
| JPS6352478B2 true JPS6352478B2 (en) | 1988-10-19 |
Family
ID=14859933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12341379A Granted JPS5646575A (en) | 1979-09-25 | 1979-09-25 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5646575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7071060B1 (en) | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
-
1979
- 1979-09-25 JP JP12341379A patent/JPS5646575A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7071060B1 (en) | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
| US7449746B2 (en) | 1996-02-28 | 2008-11-11 | Sandisk Corporation | EEPROM with split gate source side injection |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5646575A (en) | 1981-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6846686B2 (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| US4864369A (en) | P-side up double heterojunction AlGaAs light-emitting diode | |
| JP2002111052A (en) | Semiconductor light emitting device and method of manufacturing the same | |
| JPH0897468A (en) | Semiconductor light emitting device | |
| JP3251603B2 (en) | Semiconductor light emitting device | |
| JPS6239839B2 (en) | ||
| US4354140A (en) | Light-emitting semiconductor | |
| JPS61183977A (en) | Light emitting element and manufacture thereof | |
| JPS6352478B2 (en) | ||
| JP3332785B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| JP3349396B2 (en) | Semiconductor light emitting device | |
| US6245588B1 (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| JP2000174341A (en) | Gallium nitride based compound semiconductor light emitting device | |
| JPS6017969A (en) | Light emitting semiconductor device | |
| JPH07169992A (en) | Semiconductor light emitter | |
| JP2621850B2 (en) | Light emitting diode | |
| JPH0766450A (en) | Light emitting diode device and its manufacture | |
| JPH0363830B2 (en) | ||
| JPH02202085A (en) | Manufacture of semiconductor laser device | |
| JPH01296678A (en) | Manufacture of semiconductor heterojunction | |
| JPS61139082A (en) | Semiconductor light-emitting device | |
| JPS5824456Y2 (en) | semiconductor laser | |
| JPS5958879A (en) | semiconductor light emitting device | |
| JPS62130571A (en) | Ballast type semiconductor light emitting element | |
| JPH08288551A (en) | Green light-emitting diode |