JPS6357966B2 - - Google Patents
Info
- Publication number
- JPS6357966B2 JPS6357966B2 JP3616682A JP3616682A JPS6357966B2 JP S6357966 B2 JPS6357966 B2 JP S6357966B2 JP 3616682 A JP3616682 A JP 3616682A JP 3616682 A JP3616682 A JP 3616682A JP S6357966 B2 JPS6357966 B2 JP S6357966B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- sio
- zno
- film thickness
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【発明の詳細な説明】
本発明は、VHF、UHF帯において厚み振動を
用いて使用できる高安定の高周波用圧電振動子に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly stable high frequency piezoelectric vibrator that can be used using thickness vibration in the VHF and UHF bands.
一般に、高周波帯において使用される圧電振動
子は薄板の厚み振動が用いられており、代表的な
ものとして水晶、圧電セラミツクスの圧電板を用
いた振動子が知られている。この振動子は、薄板
の平行平面研磨という機械加工を行つて製造され
ているが、研磨加工では板厚を30〜50μｍとする
のが限界であり、高次モードを用いたとしても使
用周波数はせいぜい200MHzが限界であつた。 In general, piezoelectric vibrators used in high frequency bands use thickness vibration of a thin plate, and vibrators using piezoelectric plates made of quartz crystal or piezoelectric ceramics are known as typical examples. This resonator is manufactured by machining a thin plate by parallel plane polishing, but the polishing process limits the plate thickness to 30 to 50 μm, and even if higher-order modes are used, the operating frequency is At most, the limit was 200MHz.
そこで、最近、数百ＭHzの高周波帯において容
量比の小さな圧電振動子を得る方法として、スパ
ツタ法等により作成される圧電薄膜作成技術と異
方性エツチング技術を用いた圧電薄膜複合振動子
が提案されている。この振動子はシリコン基板上
にシリコン、酸化物などの薄膜と圧電薄膜とを層
状に作成し、振動子として使用する部分の基板を
エツチングによつて除去することにより、外縁部
を基板によつて支持させた構造のものである。 Therefore, recently, a piezoelectric thin film composite vibrator has been proposed as a method for obtaining a piezoelectric vibrator with a small capacitance ratio in a high frequency band of several hundred MHz, using piezoelectric thin film fabrication technology such as sputtering and anisotropic etching technology. has been done. This resonator is made by creating layers of silicon, oxide, etc. thin films and piezoelectric thin films on a silicon substrate, and by removing the portion of the substrate used as the resonator by etching, the outer edge is covered with the substrate. It is of a supported structure.
しかし、圧電薄膜はスパツタ法、CVD法など
で形成されるが、代表的な圧電薄膜材料である
ZnO、CdS、AlN等は周波数温度係数が大きいた
めに、Si基板との組合わせだけでは温度安定度の
高い圧電振動子を得ることはできない。 However, piezoelectric thin films are formed using sputtering methods, CVD methods, etc., and are typical piezoelectric thin film materials.
Since ZnO, CdS, AlN, etc. have a large frequency temperature coefficient, it is not possible to obtain a piezoelectric vibrator with high temperature stability only by combining them with a Si substrate.
この対策として、圧電材料と周波数温度係数の
符号が異る材料との組合わせにより、振動子全体
としての周波数温度係数の絶対値を小さくするこ
とが考えられる。そこで、ZnOとSiO2の周波数
温度係数の符号が異ることに着目し、第１図に示
すようにシリコン基板１１の表面にSiO2薄膜１
３を形成し、表面のSiO2だけが残るようにエツ
チングし、その上にZnO圧電薄膜１４を形成した
構造の圧電薄膜振動子が提案されている。第１図
において、１２はエツチングによりシリコン基板
に形成した空孔、１５，１６はZnO圧電薄膜１４
に対向して設けた電極である。この振動子におい
て、SiO2の膜厚がZnOの膜厚の約２分の１のと
きに基本１次モードの共振に関して零温度係数が
得られることが知られている。 As a countermeasure to this problem, it is possible to reduce the absolute value of the frequency temperature coefficient of the entire vibrator by combining a piezoelectric material and a material whose frequency temperature coefficient has a different sign. Therefore, we focused on the fact that the signs of the frequency temperature coefficients of ZnO and SiO 2 were different, and as shown in FIG .
A piezoelectric thin film vibrator has been proposed in which a ZnO piezoelectric thin film 14 is formed on the ZnO thin film 14, which is etched so that only the SiO 2 on the surface remains. In FIG. 1, 12 is a hole formed in a silicon substrate by etching, and 15 and 16 are ZnO piezoelectric thin films 14.
This is an electrode provided facing the. It is known that in this vibrator, a zero temperature coefficient can be obtained for resonance in the fundamental first mode when the SiO 2 film thickness is about half the ZnO film thickness.
しかしながら、SiO2膜は非常にもろいために
製造中にクラツクが入りやすく量産する場合に大
きな障害となり、また、得られた振動子の共振尖
鋭度Qmも500〜2000程度であり、この構造では
共振尖鋭度Qmの大きな振動子を得ることが難か
しかつた。 However, since the SiO 2 film is extremely brittle, cracks easily occur during manufacturing, which poses a major obstacle in mass production.Furthermore, the resonance sharpness Qm of the obtained vibrator is approximately 500 to 2000, and this structure does not allow resonance. It was difficult to obtain an oscillator with a large sharpness Qm.
本発明は上記問題点を解消するもので、共振尖
鋭度Qmが大きく、かつ温度安定性に優れた圧電
薄膜複合振動子を提供しようとするものである。 The present invention aims to solve the above-mentioned problems and to provide a piezoelectric thin film composite vibrator having a large resonance sharpness Qm and excellent temperature stability.
以下、本発明の実施例を図面によつて詳細に説
明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は、本発明の圧電振動子の構成を示すも
のである。すなわち、第２図において、表面が
（100）面であるSi基板２１上にSiO2薄膜２２を
形成し、SiO2薄膜２２上に下部電極２５、及び
ZnO圧電薄膜２３、上部電極２４を順に積層して
形成し、振動部位に相当するSi基板２１の裏面に
エツチングにより空孔２６を設けたものである。 FIG. 2 shows the structure of the piezoelectric vibrator of the present invention. That is, in FIG. 2, a SiO 2 thin film 22 is formed on a Si substrate 21 whose surface is a (100) plane, and a lower electrode 25 and a lower electrode 25 are formed on the SiO 2 thin film 22.
It is formed by laminating a ZnO piezoelectric thin film 23 and an upper electrode 24 in this order, and holes 26 are formed by etching on the back surface of a Si substrate 21 corresponding to the vibration site.
第２図において、Si層が完全にはエツチングさ
れていないが、このSi層の厚さT3は、高濃度に
ホウ素をドープすることにより、ホウ素がドープ
されたSi層はパイロカテコール−エチレンジアミ
ンまたはKOHなどのエツチング液に殆んどエツ
チングされないことにより、容易に制御すること
ができる。また、ホウ素を高濃度に含んだSiは、
SiO2に比べてエツチング速度が遅く、それだけ
第１図の構造のものより高い平面度が得られやす
い長所がある。さらに、SiはSiO2に比べて機械
的強度が大きく、製造中にクラツクが入ることは
殆んでなく、生産性に優れている。以上の性質
と、Siが本質的に高振動（high Ｑ）材であるこ
とにより、共振尖鋭度Qmの大きな振動子を得る
ことができる。 In Fig. 2, the Si layer is not completely etched, but the thickness T3 of this Si layer is determined by doping boron at a high concentration. Since it is hardly etched by an etching solution such as KOH, it can be easily controlled. In addition, Si containing a high concentration of boron is
It has the advantage that it has a slower etching rate than SiO 2 and can easily obtain higher flatness than the structure shown in FIG. Furthermore, Si has greater mechanical strength than SiO 2 , rarely cracks during manufacturing, and is superior in productivity. Due to the above properties and the fact that Si is essentially a high vibration (high Q) material, a vibrator with a large resonance sharpness Qm can be obtained.
一方、弾性スチフネスCE 33の温度係数の値が
ZnO、Siが負、SiO2が正であることから、ZnOの
膜厚T1、SiO2の膜厚T2、Siの膜厚T3の膜厚比を
選定することにより零温度係数を得ることができ
る。 On the other hand, the value of the temperature coefficient of elastic stiffness C E 33 is
Since ZnO and Si are negative and SiO 2 is positive, zero temperature coefficient can be obtained by selecting the film thickness ratio of ZnO film thickness T 1 , SiO 2 film thickness T 2 , and Si film thickness T 3 be able to.
また、振動子の容量比γを小さくするという意
味から基本１次モード及び２次モードを積極的に
利用することは有効な方法である。 Furthermore, it is an effective method to actively utilize the fundamental primary mode and secondary mode in order to reduce the capacitance ratio γ of the vibrator.
次に、具体的な実施例に従つて詳細に説明す
る。 Next, a detailed explanation will be given according to a specific example.
〔実施例 １〕
第２図に示した本発明の構成で、共振時に２分
の１波長共振を行う基本１次モードを用いた振動
子の実施例についてのべる。表面が（100）面で
あるSi基板２１にホウ素を高濃度にドープし、そ
の上にSiO2膜をスパツタ法で作成した。次に、
Si基板２１の裏面にCVD法によつてSi3N4膜を形
成し、これをマスクとして、エチレンジアミン、
パイロカテコール及び水からなるエツチング液で
空孔２６を設けて、さらに表面に形成したSiO2
薄膜上にCrを下地としてAuを蒸着し、フオトリ
ングラフイーにより下部電極２５を形成したの
ち、スパツタ法によりZnO膜２３を形成し、リフ
トオフによつてAlの上部電極２４を形成した。
このとき、ZnO膜厚T1とSi膜厚T3との膜厚比
T3／T1及びZnO膜厚T1とSiO2膜厚との膜厚比
T2／T1をパラメータとして種々の値について実
験を行い、室温付近で零温度係数となる膜厚比
T3／T1、T2／T1の関係とそのときの容量比γの
値を求めた。それを第３図に示す。第３図から、
零温度係数となる膜厚比はT2／T1＝Ｙ、T3／T1
＝Ｘとすると、ほぼ次の実験式で与えられること
が明らかである。即ち
Ｘ0.81のとき Ｙ＝−0.264X＋0.348
Ｘ＞0.81のとき Ｙ＝0.053X＋0.092
このとき、T3／T1が増大するとともに容量比γ
も増大していくが、T3／T1＜2.0ではγ＜100が
得られる。具体的な一例としてZnOの膜厚T1＝
5.2μｍ、SiO2の膜厚T2＝0.8μｍ、Siの膜厚T3＝
3.9μｍの振動子の特性について述べると、このと
き共振周波数r＝332.8MHz、容量比γ＝29.4、共
振尖鋭度Qm＝3200を得た。また−20℃〜60℃の
温度範囲において共振周波数温度偏差Δr／r＝
100ppm以下の値を容易に得ることができた。[Embodiment 1] An embodiment of a vibrator using the fundamental first mode which performs half wavelength resonance at the time of resonance with the configuration of the present invention shown in FIG. 2 will be described. A Si substrate 21 having a (100) surface was doped with boron at a high concentration, and a SiO 2 film was formed thereon by sputtering. next,
A Si 3 N 4 film is formed on the back surface of the Si substrate 21 by the CVD method, and using this as a mask, ethylenediamine,
Holes 26 were created using an etching solution consisting of pyrocatechol and water, and SiO 2 was further formed on the surface.
Au was vapor-deposited on the thin film using Cr as a base, and a lower electrode 25 was formed by photolithography, then a ZnO film 23 was formed by sputtering, and an upper electrode 24 of Al was formed by lift-off.
At this time, the film thickness ratio between ZnO film thickness T 1 and Si film thickness T 3
T 3 /T 1 and the ratio of ZnO film thickness T 1 to SiO 2 film thickness
We conducted experiments with various values of T 2 /T 1 as parameters, and determined the film thickness ratio that has a zero temperature coefficient near room temperature.
The relationship between T 3 /T 1 and T 2 /T 1 and the value of the capacitance ratio γ at that time were determined. This is shown in Figure 3. From Figure 3,
The film thickness ratio with zero temperature coefficient is T 2 /T 1 = Y, T 3 /T 1
=X, it is clear that it is approximately given by the following empirical formula. That is, when X0.81, Y=-0.264X+0.348 When X>0.81, Y=0.053X+0.092 At this time, as T 3 /T 1 increases, the capacitance ratio γ
However, when T 3 /T 1 <2.0, γ<100 is obtained. As a specific example, ZnO film thickness T 1 =
5.2 μm, SiO 2 film thickness T 2 = 0.8 μm, Si film thickness T 3 =
Regarding the characteristics of the 3.9 μm vibrator, we obtained a resonance frequency r=332.8MHz, a capacitance ratio γ=29.4, and a resonance sharpness Qm=3200. Also, in the temperature range of -20℃ to 60℃, the resonance frequency temperature deviation Δr/r=
Values below 100 ppm could be easily obtained.
〔実施例 ２〕
同じく第２図に示したZnO／SiO2／Si三層構成
の圧電薄膜複合振動子において、共振時において
１波長共振を行う２次モードを用いた振動子の実
施例についてのべる。振動子の作成は実施例１と
全く同じ手準で行つた。このとき、膜厚比T3／
T1及びT2／T1をパラメータとして種々の値につ
いて実験を行い、室温付近で零温度係数となる膜
厚比T3／T1とT2／T1の関係とそのときの容量比
γの値を求めた。それを第４図に示す。第４図か
ら、零温度係数となる膜厚比はT2／T1＝Ｙ、
T3／T1＝Ｘとすると、ほぼ次の実験式で与えら
れることが明らかである。即ち、
Ｙ＝0.186X2−0.327X＋1.05（Ｘ＞０）
このときの容量比γと膜厚比T3／T1との関係を
破線で示す。T3／T1＜1.5においてγ＜60が得ら
れていることがわかる。一方、２次モードでは、
実用的な容量比が得られかつ室温近傍において零
温度係数を有するもう一つの領域がＸ＜0.5にお
いて存在することがわかつた。即ち
０＜Ｘ＜0.5において Ｙ＝−Ｘ＋0.75
で表わされる一点鎖線に沿つた領域である。この
ときの膜厚比T3／T1と容量比γの関係を点線で
示す。γ＜30が得られていることがわかる。[Example 2] In the piezoelectric thin film composite resonator with the ZnO/SiO 2 /Si three-layer structure shown in Fig. 2, an example of a resonator using a secondary mode that resonates with one wavelength during resonance will be described. . The vibrator was created in exactly the same manner as in Example 1. At this time, the film thickness ratio T 3 /
We conducted experiments with various values of T 1 and T 2 /T 1 as parameters, and determined the relationship between the film thickness ratio T 3 /T 1 and T 2 /T 1 that has a zero temperature coefficient near room temperature, and the capacitance ratio γ at that time. The value of was calculated. This is shown in Figure 4. From Figure 4, the film thickness ratio that gives a zero temperature coefficient is T 2 /T 1 = Y,
When T 3 /T 1 =X, it is clear that it is approximately given by the following empirical formula. That is, Y=0.186X 2 −0.327X+1.05 (X>0) The relationship between the capacitance ratio γ and the film thickness ratio T 3 /T 1 in this case is shown by a broken line. It can be seen that γ<60 is obtained when T 3 /T 1 <1.5. On the other hand, in the secondary mode,
It was found that another region exists at X<0.5 in which a practical capacitance ratio is obtained and has a zero temperature coefficient near room temperature. That is, it is a region along the dashed line represented by Y=-X+0.75 when 0<X<0.5. The relationship between the film thickness ratio T 3 /T 1 and the capacitance ratio γ at this time is shown by a dotted line. It can be seen that γ<30 is obtained.
式で表わされる領域に関する具体的な一例と
して、ZnOの膜厚T1＝3.4μｍ、SiO2の膜厚T2＝
3.1μｍ、Siの膜厚T3＝3.2μｍの振動子の特性につ
いて述べると、このとき、２次モードの共振周波
数r＝723.1MHz、容量比γ＝27.93、共振尖鋭
Qm＝3300を得た。また、−20℃〜60℃の温度範
囲において共振周波数温度偏差Δr／r＝80ppm
以下の値が比較的容易に得られた。また、式で
表わされる領域に関する具体的な一例としてT1
＝5.7μｍ、T2＝2.8μｍ、T3＝1.4μｍの振動子の具
体的な特性について述べると、このとき２次モー
ドの共振周波数r＝572.8MHz、容量比γ＝21.7、
共振尖鋭度Qm＝2200を得た。また−20℃〜60℃
の温度範囲において共振周波数温度偏差Δr／r
＝100ppm以下の値が容易に得られた。 As a specific example regarding the region expressed by the formula, ZnO film thickness T 1 = 3.4 μm, SiO 2 film thickness T 2 =
Describing the characteristics of a vibrator with a Si film thickness of 3.1 μm and a Si film thickness of T 3 = 3.2 μm, the second mode resonance frequency r = 723.1 MHz, the capacitance ratio γ = 27.93, and the resonance sharpness.
I got Qm=3300. In addition, the resonance frequency temperature deviation Δr/r = 80ppm in the temperature range of -20℃ to 60℃
The following values were obtained relatively easily. Also, as a specific example regarding the area expressed by the formula, T 1
= 5.7 μm, T 2 = 2.8 μm, T 3 = 1.4 μm. In this case, the resonance frequency of the secondary mode r = 572.8 MHz, the capacitance ratio γ = 21.7,
Resonance sharpness Qm=2200 was obtained. Also -20℃~60℃
Resonant frequency temperature deviation Δr/r in the temperature range of
A value of 100 ppm or less was easily obtained.
以上の本発明の振動子の試作結果、エツチング
の際、クラツクが入つてしまう事故は皆無であ
り、良好な特性を示す振動子を容易に得ることが
できた。 As a result of the above trial production of the vibrator of the present invention, there was no accident of cracking during etching, and a vibrator exhibiting good characteristics could be easily obtained.
尚、本発明の振動子において、分割電極を用い
てフイルタ構成にすることも可能であり、また周
波数調製のため振動子の表面に絶縁物をスパツタ
することももちろん可能であることは言うまでも
ない。 It goes without saying that the vibrator of the present invention can be configured as a filter using split electrodes, and it is also possible to sputter an insulator on the surface of the vibrator for frequency adjustment.
したがつて、本発明によれば、共振尖鋭度が大
きく、しかも温度安定性に優れた振動子を容易に
得ることができ、工業的価値も多大である効果を
有しているものである。 Therefore, according to the present invention, it is possible to easily obtain a vibrator having a large resonance sharpness and excellent temperature stability, and has the effect of having great industrial value.
第１図は従来のZnO／SiO2複合振動子、第２
図は本発明の実施例を示すZnO／SiO2／Si複合振
動子、第３図及び第４図はそれぞれ基本モード、
第２次モードに関する零温度係数となる膜厚比と
そのときの容量比の関係を示す図である。
２１はSi基板、２２はSiO2膜、２３はZnO膜、
２４，２５は電極、１２，２６は空孔を示す。
Figure 1 shows a conventional ZnO/SiO 2 composite resonator,
The figure shows a ZnO/SiO 2 /Si composite oscillator showing an embodiment of the present invention, and FIGS. 3 and 4 show the fundamental mode, respectively.
FIG. 7 is a diagram showing the relationship between the film thickness ratio that gives a zero temperature coefficient regarding the second mode and the capacitance ratio at that time. 21 is a Si substrate, 22 is a SiO 2 film, 23 is a ZnO film,
24 and 25 are electrodes, and 12 and 26 are holes.
Claims (1)
らなり、SiO2薄膜がシリコン薄膜とZnO薄膜と
の間に位置するような多層構造の振動部位をも
ち、周縁部をシリコン基板によつて支持された厚
み振動圧電振動子において、ZnO薄膜の厚さを
T1，SiO2薄膜の厚さをT2、Si薄膜の厚さをT3と
し、ZnO薄膜とSi薄膜との膜厚比T3／T1をＸ、
ZnO薄膜とSiO2薄膜との膜厚比T2／T1をＹと置
き換えたときに、基本１次モードを使用する場合
には、次式、 Ｙ＝−0.264X＋0.348（Ｘ0.81） Ｙ＝−0.053X＋0.092（Ｘ＞0.81） で与えられる膜厚比とし、二次モードを使用する
場合には次式 Ｙ＝0.186X2−0.327×＋1.05（Ｘ＞０） Ｙ＝−Ｘ＋0.75（０＜Ｘ＜0.5） で与えられる膜厚比としたことを特徴とする圧電
薄膜複合振動子。[Scope of Claims] 1. It has a vibrating part of a multilayer structure consisting of a silicon thin film, an SiO 2 thin film, and a ZnO piezoelectric thin film, with the SiO 2 thin film located between the silicon thin film and the ZnO thin film, and the peripheral part is attached to the silicon substrate. In the thickness vibrating piezoelectric vibrator supported by
T 1 , the thickness of the SiO 2 thin film is T 2 , the thickness of the Si thin film is T 3 , the thickness ratio T 3 /T 1 of the ZnO thin film and the Si thin film is X,
When using the fundamental first-order mode, when the film thickness ratio T 2 /T 1 of the ZnO thin film and SiO 2 thin film is replaced with Y, the following formula, Y = -0.264X + 0.348 (X0.81) The film thickness ratio is given by Y=-0.053X+0.092 (X>0.81), and when using the quadratic mode, the following formula is given: Y=0.186X 2 -0.327×+1.05 (X>0) Y=- A piezoelectric thin film composite vibrator characterized by having a film thickness ratio given by X+0.75 (0<X<0.5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (en) | 1982-03-08 | 1982-03-08 | Piezo-electric thin film composite vibrator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3616682A JPS58153412A (en) | 1982-03-08 | 1982-03-08 | Piezo-electric thin film composite vibrator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153412A JPS58153412A (en) | 1983-09-12 |
| JPS6357966B2 true JPS6357966B2 (en) | 1988-11-14 |
Family
ID=12462169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3616682A Granted JPS58153412A (en) | 1982-03-08 | 1982-03-08 | Piezo-electric thin film composite vibrator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153412A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| US5162691A (en) * | 1991-01-22 | 1992-11-10 | The United States Of America As Represented By The Secretary Of The Army | Cantilevered air-gap type thin film piezoelectric resonator |
| US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
| EP0810676B1 (en) * | 1996-05-27 | 2002-08-28 | Ngk Insulators, Ltd. | Piezoelectric film-type element |
| WO2002093740A1 (en) | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Film bulk acoustic resonator |
| JP2005236337A (en) | 2001-05-11 | 2005-09-02 | Ube Ind Ltd | Thin film acoustic resonator and manufacturing method thereof |
| US7388318B2 (en) | 2002-06-20 | 2008-06-17 | Ube Industries, Ltd. | Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof |
| JP2004158970A (en) | 2002-11-05 | 2004-06-03 | Ube Ind Ltd | Bandpass filter using thin film piezoelectric resonator |
| JP3889351B2 (en) | 2002-12-11 | 2007-03-07 | Ｔｄｋ株式会社 | Duplexer |
| JP2004304490A (en) | 2003-03-31 | 2004-10-28 | Tdk Corp | Method and device for manufacturing thin-film piezoelectric resonator, thin-film piezoelectric resonator, and electronic component |
| JP2004320127A (en) | 2003-04-11 | 2004-11-11 | Tdk Corp | Manufacturing method for thin film piezoelectric resonator, manufacturing apparatus for thin film piezoelectric resonator, thin film piezoelectric resonator and electronic component |
| CN100546178C (en) | 2003-12-19 | 2009-09-30 | 宇部兴产株式会社 | Method for manufacturing piezoelectric thin film device and piezoelectric thin film device |
| FI20095988A0 (en) * | 2009-09-28 | 2009-09-28 | Valtion Teknillinen | Micromechanical resonator and method of manufacture thereof |
-
1982
- 1982-03-08 JP JP3616682A patent/JPS58153412A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58153412A (en) | 1983-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4456850A (en) | Piezoelectric composite thin film resonator | |
| US5894647A (en) | Method for fabricating piezoelectric resonators and product | |
| EP0616426B1 (en) | Surface acoustic wave device having a lamination structure | |
| EP1047189B1 (en) | Piezoelectric resonator | |
| CN107317560B (en) | Temperature compensation surface acoustic wave device and preparation method thereof | |
| KR100799391B1 (en) | Thin film acoustic resonator and its manufacturing method | |
| JPS6357966B2 (en) | ||
| JP2007228356A (en) | Piezoelectric thin film device | |
| JPH0548642B2 (en) | ||
| KR20200072904A (en) | Piezoelectric thin film resonator | |
| JPH0532925B2 (en) | ||
| JP2005033379A (en) | Thin film bulk acoustic wave oscillator and manufacturing method thereof | |
| JP2002076824A (en) | Piezoelectric thin film resonator, filter and electronic device | |
| JPH0365046B2 (en) | ||
| JPH0211043B2 (en) | ||
| JPS60142607A (en) | Piezoelectric thin film composite oscillator | |
| JP2000165188A (en) | Piezoelectric resonator | |
| JP3493315B2 (en) | Piezoelectric resonator | |
| CN205792476U (en) | A kind of FBAR using ultra-thin piezoelectric single crystal to make | |
| JPH0236608A (en) | Frequency adjusting method for surface acoustic wave element | |
| JP4339604B2 (en) | Piezoelectric thin film element | |
| JPS58137318A (en) | Thin-film piezoelectric oscillator | |
| JPH01103310A (en) | Surface acoustic wave element | |
| JPH0356013B2 (en) | ||
| CN207926539U (en) | A kind of solid patch type thin film bulk acoustic wave resonator using piezoelectric monocrystal foil |