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JPS6361751B2 - - Google Patents
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JPS6361751B2 - - Google Patents

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Publication number
JPS6361751B2
JPS6361751B2 JP4741784A JP4741784A JPS6361751B2 JP S6361751 B2 JPS6361751 B2 JP S6361751B2 JP 4741784 A JP4741784 A JP 4741784A JP 4741784 A JP4741784 A JP 4741784A JP S6361751 B2 JPS6361751 B2 JP S6361751B2
Authority
JP
Japan
Prior art keywords
voltage power
constant voltage
gas sensor
voltage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4741784A
Other languages
Japanese (ja)
Other versions
JPS60189894A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59047417A priority Critical patent/JPS60189894A/en
Publication of JPS60189894A publication Critical patent/JPS60189894A/en
Publication of JPS6361751B2 publication Critical patent/JPS6361751B2/ja
Granted legal-status Critical Current

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  • Control Of High-Frequency Heating Circuits (AREA)
  • Electric Ovens (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は気体センサを備えた高周波加熱装置に
係り、とりわけ気体センサの傍熱ヒータのための
定電圧電源の構成に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a high frequency heating device equipped with a gas sensor, and more particularly to the configuration of a constant voltage power supply for an indirect heater of a gas sensor.

従来例の構成とその問題点 マイクロ波加熱を自動的に終了させるため、被
加熱物から発生する水蒸気や種々のガスを検出す
る気体センサを備えた高周波加熱装置が、広く実
用に供されている。このような気体センサとして
は、松下社製の相対湿度センサ“ヒユミセラム”
や絶対湿度センサ“ネオ・ヒユミセラム”、フイ
ガロ社製のガスセンサなどが応用されている。こ
れらのセンサはいずれも傍熱ヒータを備えてお
り、センサ・チツプを所定温度に傍熱し、所望の
検知特性を現出し、またチツプの汚れを焼き切
る。
Conventional configuration and its problems In order to automatically terminate microwave heating, high-frequency heating devices equipped with gas sensors that detect water vapor and various gases generated from the heated object are widely used in practical use. . An example of such a gas sensor is the relative humidity sensor "Hyumi Ceram" manufactured by Matsushita Corporation.
, the absolute humidity sensor ``Neo-Hyumi Ceram,'' and the gas sensor manufactured by Figaro are being applied. All of these sensors are equipped with an indirect heater to indirectly heat the sensor chip to a predetermined temperature to develop the desired sensing characteristics and to burn off any dirt on the chip.

第2図はかかる従来の気体センサの傍熱ヒータ
回路の代表的な構成例を示す。トランス5の二次
巻線に整流ダイオード6と平滑コンデンサ7が接
続され、直流電圧がP1点に形成される。そして
トランジスタ8により定電圧化され、気体センサ
の傍熱ヒータ9に印加される。トランジスタ8の
基準電圧は、ツエナー・ダイオード10によつて
作られ、ツエナー電流はP1点から抵抗11を介
して供給される。ダイオード12は温度特性を改
善する。
FIG. 2 shows a typical configuration example of such a conventional indirect heater circuit for a gas sensor. A rectifier diode 6 and a smoothing capacitor 7 are connected to the secondary winding of the transformer 5, and a DC voltage is formed at point P1 . The voltage is then made constant by the transistor 8 and applied to the indirect heater 9 of the gas sensor. The reference voltage of the transistor 8 is created by a Zener diode 10, and the Zener current is supplied from a point P1 through a resistor 11. Diode 12 improves temperature characteristics.

このような定電圧電源は電源としてはおよそポ
ピユラーな構成であるが、傍熱ヒータのような低
電圧、大電流タイプの負荷には、電源が大がかり
になるという不都合を生じる。例えば松下社製の
“ネオ・ヒユミセラム”では、傍熱ヒータは2.5ボ
ルト、0.5アンペア(1.25ワツト)であるが、平
滑コンデンサ7を相当大きくするか、整流ダイオ
ード6を半波整流から全波整流に改めるなどしな
いと、P1点のリツプルが大きくなりすぎ、ツエ
ナー電圧までが影響を受けて傍熱ヒータ9の両端
にまでリツプルが現れる。一例を掲げると、トラ
ンスの2次巻線の仕様を5ボルト、1アンペアと
し、半波整流のとき、平滑コンデンサ7は3300マ
イクロ・フアラツド以上ないと、傍熱ヒータ9の
両端にリツプルを生じた。
Although such a constant voltage power supply has a generally popular configuration as a power supply, it has the disadvantage that the power supply becomes large-scale for a low-voltage, large-current type load such as an indirect heater. For example, in Matsushita's "Neo Huyumi Ceram", the indirect heater is 2.5 volts and 0.5 ampere (1.25 watts), but the smoothing capacitor 7 must be made considerably large, or the rectifier diode 6 must be changed from half-wave rectification to full-wave rectification. If no changes are made, the ripple at the P1 point will become too large, and the Zener voltage will also be affected, causing ripples to appear at both ends of the indirect heater 9. To give an example, when the specifications of the secondary winding of the transformer are 5 volts and 1 ampere, and when half-wave rectification is used, the smoothing capacitor 7 must be at least 3300 microfarads or ripples will occur at both ends of the indirect heater 9. .

このように従来の定電圧電源は、回路が大がか
りとなり、大容量の平滑コンデンサを要するとい
う問題を有していた。
As described above, the conventional constant voltage power supply has the problem that the circuit is large-scale and a large-capacity smoothing capacitor is required.

発明の目的 本発明は上記従来の問題を解消するもので、コ
ンパクトで安価な気体センサの傍熱ヒータの電源
を提供することを目的とする。
OBJECTS OF THE INVENTION The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a compact and inexpensive power source for an indirect heater of a gas sensor.

発明の構成 上記目的を達成するため、本発明の高周波加熱
装置は気体センサと複数の定電圧電源とを備え、
気体センサの傍熱ヒータに接続した定電圧電源の
基準電圧をこれとは異なる定電圧電源から作成す
るもので、電源をコンパクトに安価に構成でき
る。
Configuration of the Invention In order to achieve the above object, the high frequency heating device of the present invention includes a gas sensor and a plurality of constant voltage power supplies,
The reference voltage of the constant voltage power supply connected to the indirect heater of the gas sensor is created from a different constant voltage power supply, and the power supply can be configured compactly and at low cost.

実施例の説明 以下、本発明の実施例について図面に基づいて
説明する。
DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described based on the drawings.

第1図は本発明に係る高周波加熱装置の斜視図
である。本体1の前面には開閉自在に扉体2が軸
支され、操作パネル3が具備されている。この操
作パネル3上には、気体センサを用いた自動加熱
を行うオート・キーが配される。
FIG. 1 is a perspective view of a high-frequency heating device according to the present invention. A door body 2 is pivotally supported on the front surface of the main body 1 so as to be freely openable and closable, and an operation panel 3 is provided. On this operation panel 3, there is arranged an auto key that performs automatic heating using a gas sensor.

第3図が本発明の一実施例たる電源である。気
体センサの傍熱ヒータ9は、第2図の従来例と同
様に定電圧電源に接続されている。従来と異なる
のはトランジスタ8の基準電圧を作るツエナー・
ダイオード10に電流を供給する抵抗11が、
P1点ではなく別の定電圧電源13の出力端P2
接続されている点である。この定電圧電源13は
マイコンなどで具現化される制御部14に電源電
圧を供給するなど、他の用途に兼用され、さらに
気体センサ・チツプ15と入力抵抗16にも基準
電圧を印加する。このP3点はA/D入力に接続
される。
FIG. 3 shows a power supply according to an embodiment of the present invention. The indirect heater 9 of the gas sensor is connected to a constant voltage power source as in the conventional example shown in FIG. What is different from the conventional one is the Zener that creates the reference voltage for transistor 8.
A resistor 11 that supplies current to the diode 10 is
This point is connected not to the point P1 but to the output terminal P2 of another constant voltage power supply 13. This constant voltage power supply 13 is also used for other purposes, such as supplying a power supply voltage to a control section 14 implemented by a microcomputer, etc., and also applies a reference voltage to a gas sensor chip 15 and an input resistor 16. This P3 point is connected to the A/D input.

さてかかる構成によりP2点にリツプルは生じ
ないので、ツエナー・ダイオード10のツエナー
電圧は傍熱ヒータ9に大電流が流れても安定であ
り、トランジスタ8の出力にリツプルが生じにく
い。例えばトランス5の2次巻線の仕様を5ボル
ト、1アンペアとし、半波整流のとき、松下社製
の“ネオ・ヒユミセラム”(2.5ボルト、0.5アン
ペア)を接続して、平滑コンデンサは2000マイク
ロ・フアラツドあれば、リツプルを除くことがで
きた。
With this configuration, no ripple occurs at point P2 , so the Zener voltage of the Zener diode 10 is stable even when a large current flows through the indirect heater 9, and ripples are less likely to occur in the output of the transistor 8. For example, if the specifications of the secondary winding of transformer 5 are 5 volts and 1 ampere, and when half-wave rectification is used, connect Matsushita's "Neo Huyumi Ceram" (2.5 volts, 0.5 ampere), and the smoothing capacitor is 2000 microns.・If I had Furatsudo, I could eliminate Ripple.

第4図は本発明のさらに別な実施例を示す回路
図であり、トランジスタ8の基準電圧をオペアン
プ17のボルテージ・フオロワによる抵抗分割で
作つている。基準電圧はP2点の電位+Bを抵抗
18と19で分圧して形成される。かかる構成で
は2.5ボルトといつた低電圧を安定に作ることが
でき、ツエナー・ダイオードを用いる方法に比し
てヒータ電圧のバラつきを小さく抑えうる。さら
に電圧+Bがバラついてもヒータ電圧にうまくフ
イード・バツクされ、P3点の電位が安定となる。
これは例えば+B電圧が高めにバラつくと、P3
点の電位も高めに動こうとするが、ヒータ電圧も
高くなり、チツプ15の温度が高まつて抵抗値が
低減し、P3点の電位が高めに動くのを抑えるこ
とができることによる。
FIG. 4 is a circuit diagram showing still another embodiment of the present invention, in which the reference voltage of the transistor 8 is created by resistance division using a voltage follower of an operational amplifier 17. The reference voltage is formed by dividing the potential +B at point P2 by resistors 18 and 19. With this configuration, a low voltage of 2.5 volts can be stably generated, and variations in heater voltage can be suppressed compared to a method using a Zener diode. Furthermore, even if the voltage +B varies, it is well fed back to the heater voltage, and the potential at point P3 becomes stable.
For example, if the +B voltage varies to a high degree, P 3
The potential at point P3 also tends to move higher, but the heater voltage also increases, the temperature of the chip 15 increases, the resistance value decreases, and the potential at point P3 can be prevented from moving higher.

第5図はかかる高周波加熱装置の構成を示す。
操作パネル3上のオート・キー4から入力された
指令は、制御部14によつて解読される。そして
制御部14はドライバ20を介して高周波発生手
段21たるマグネトロンに給電を開始する。加熱
室22内には被加熱物23が載置皿24上に載置
されている。載置皿24はモータ25により回転
駆動され、加熱ムラの改善がはかれる。
FIG. 5 shows the configuration of such a high frequency heating device.
Commands input from the auto key 4 on the operation panel 3 are decoded by the control section 14. The control unit 14 then starts supplying power to the magnetron, which is the high frequency generating means 21, via the driver 20. An object to be heated 23 is placed on a placing plate 24 in the heating chamber 22 . The mounting plate 24 is rotationally driven by a motor 25 to improve uneven heating.

加熱が進むにつれてやがて被加熱物23から水
蒸気やガスが発生し始める。この水蒸気はフアン
26により、排気ガイド27から機体外に排出さ
れ、ここに気体センサ15が配設される。気体セ
ンサ15は第3図あるいは第4図に示した検知回
路28を経て、制御部14のA/Dコンバータに
接続される。制御部14はA/Dコンバータ内蔵
のマイコンで実現できる。
As the heating progresses, steam and gas begin to be generated from the heated object 23. This water vapor is discharged to the outside of the aircraft from an exhaust guide 27 by a fan 26, and a gas sensor 15 is disposed here. The gas sensor 15 is connected to the A/D converter of the control section 14 via a detection circuit 28 shown in FIG. 3 or 4. The control unit 14 can be realized by a microcomputer with a built-in A/D converter.

発明の効果 以上のように本発明によれば次の効果を得るこ
とができる。
Effects of the Invention As described above, according to the present invention, the following effects can be obtained.

(1) 低電圧、大電流という困難な気体センサの傍
熱ヒータの定電圧電源を、リツプルをなくし安
定に構成できる。
(1) It is possible to eliminate ripples and stably configure the constant voltage power supply for the indirect heater of the gas sensor, which is difficult to use due to the low voltage and large current.

(2) さらにコンパクトに安価に構成できる。(2) It can be configured more compactly and inexpensively.

(3) センサ・チツプの入力電圧の変動をヒータ電
圧にフイード・バツクすることで抑えることが
できる。
(3) Fluctuations in the input voltage of the sensor chip can be suppressed by feeding back the heater voltage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す高周波加熱装
置の本体斜視図、第2図は従来の気体センサの傍
熱ヒータ回路図、第3図は本発明の一実施例を示
す気体センサの傍熱ヒータ回路図、第4図は別な
実施例を示す傍熱ヒータ回路図、第5図は同構成
を示すブロツク図である。 8……定電圧トランジスタ、9……傍熱ヒー
タ、10……ツエナー・ダイオード、13……第
2の定電圧電源、14……制御部、15……気体
センサ・チツプ、21……高周波発生手段、22
……加熱室、23……被加熱物。
FIG. 1 is a perspective view of the main body of a high-frequency heating device showing an embodiment of the present invention, FIG. 2 is a circuit diagram of a conventional indirect heater of a gas sensor, and FIG. 3 is a diagram of a gas sensor showing an embodiment of the present invention. FIG. 4 is a circuit diagram of an indirect heater showing another embodiment, and FIG. 5 is a block diagram showing the same configuration. 8... Constant voltage transistor, 9... Indirect heater, 10... Zener diode, 13... Second constant voltage power supply, 14... Control unit, 15... Gas sensor chip, 21... High frequency generation means, 22
...Heating chamber, 23...Object to be heated.

Claims (1)

【特許請求の範囲】[Claims] 1 被加熱物を載置する加熱室と、この加熱室に
結合された高周波発生手段と、この高周波発生手
段への給電を制御する制御部と、前記被加熱物か
ら発生する水蒸気やガスを検出する気体センサ
と、この気体センサの傍熱ヒータに接続された定
電圧電源とより成り、前記定電圧電源の基準電圧
をこれとは異なる第2の定電圧電源から構成し、
両定電圧電源の一線を接続し同電位とした高周波
加熱装置。
1. A heating chamber in which an object to be heated is placed, a high-frequency generating means coupled to this heating chamber, a control section for controlling power supply to this high-frequency generating means, and a device for detecting water vapor and gas generated from the object to be heated. a constant voltage power source connected to an indirect heater of the gas sensor, and a reference voltage of the constant voltage power source is configured from a second constant voltage power source different from the reference voltage of the constant voltage power source,
A high-frequency heating device that connects the lines of both constant-voltage power supplies to have the same potential.
JP59047417A 1984-03-12 1984-03-12 High frequency heater Granted JPS60189894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59047417A JPS60189894A (en) 1984-03-12 1984-03-12 High frequency heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59047417A JPS60189894A (en) 1984-03-12 1984-03-12 High frequency heater

Publications (2)

Publication Number Publication Date
JPS60189894A JPS60189894A (en) 1985-09-27
JPS6361751B2 true JPS6361751B2 (en) 1988-11-30

Family

ID=12774574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59047417A Granted JPS60189894A (en) 1984-03-12 1984-03-12 High frequency heater

Country Status (1)

Country Link
JP (1) JPS60189894A (en)

Also Published As

Publication number Publication date
JPS60189894A (en) 1985-09-27

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