JPS6365639B2 - - Google Patents
Info
- Publication number
- JPS6365639B2 JPS6365639B2 JP58196401A JP19640183A JPS6365639B2 JP S6365639 B2 JPS6365639 B2 JP S6365639B2 JP 58196401 A JP58196401 A JP 58196401A JP 19640183 A JP19640183 A JP 19640183A JP S6365639 B2 JPS6365639 B2 JP S6365639B2
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- rotating shaft
- susceptor
- exhaust hole
- susceptors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はMOS−IC等の半導体装置の製造に使
用する気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductor devices such as MOS-ICs.
(b) 技術の背景
シリコン結晶基板等に半導体装置あるいは絶縁
膜を気相成長させる方法、所謂CVD法において
は、石英等にてなる反応炉内の常気圧
（760Torr）または減圧下で反応ガス分子を前記
基板に堆積して成膜することが行われている。本
発明は、特に大径のウエーハ（以下、基板と呼
ぶ）に対してバツチ生産に適する気相成長装置を
提示したものである。(b) Background of the technology In the so-called CVD method, a method of vapor phase growth of semiconductor devices or insulating films on silicon crystal substrates, reactive gas molecules are grown under normal pressure (760 Torr) or reduced pressure in a reactor made of quartz or the like. A film is formed by depositing on the substrate. The present invention proposes a vapor phase growth apparatus particularly suitable for batch production of large-diameter wafers (hereinafter referred to as substrates).
(c) 従来技術の問題点
第１図は、成膜加工用シリコン結晶基板等を装
着する従来のサセプタ（基板ホルダ）の構造例を
示す斜視図である。(c) Problems with the Prior Art FIG. 1 is a perspective view showing an example of the structure of a conventional susceptor (substrate holder) on which a silicon crystal substrate for film-forming processing is mounted.
第１図イはバレル型と称するサセプタ１、即ち
六角錐台の枠体形状をしたサセプタ１はSiC等で
製作され、各外周面には成膜される基板４が装着
されるようになる。 In FIG. 1A, a susceptor 1 called a barrel type, that is, a susceptor 1 having a frame shape of a hexagonal truncated pyramid is made of SiC or the like, and a substrate 4 on which a film is to be formed is mounted on each outer peripheral surface.
第１図ロは円形平板デイスク型と称するサセプ
タ２であり、上面に複数枚の基板４を装着させる
セサプタ２は、縦型反応炉に用いられる。 FIG. 1B shows a susceptor 2 called a circular flat disk type, and the susceptor 2, on which a plurality of substrates 4 are mounted on the upper surface, is used in a vertical reactor.
第１図ハ角形平板デイスク型と称するセサプタ
３であり、上面に複数枚の基板４を装着させるセ
サプタ３は、横型反応炉に用いられる。 FIG. 1 shows a sensor 3 called a rectangular flat disk type, and the sensor 3 on which a plurality of substrates 4 are mounted is used in a horizontal reactor.
なお、第１図においてサセプタ１または２を支
持する回転軸は５は、基板４の成膜厚さを均一化
させるため、サセプタ１または２を回転させるよ
うになる。 In FIG. 1, the rotating shaft 5 supporting the susceptor 1 or 2 rotates the susceptor 1 or 2 in order to make the film thickness of the substrate 4 uniform.
また、反応炉の前記縦型および横型は、反応炉
内に流れる反応ガス流が縦方向であるか、または
横方向であるかによつて区別される。 Further, the vertical type and horizontal type of reactor are distinguished depending on whether the flow of the reactant gas flowing in the reactor is vertical or horizontal.
ところで、従来のサセプタ１〜３は装着できる
基板４の枚数が少なく、せいぜい20枚程度であ
り、円形基板４の直径は５インチが限度であつ
た。 By the way, in the conventional susceptors 1 to 3, the number of substrates 4 that can be mounted is small, about 20 at most, and the diameter of the circular substrate 4 is limited to 5 inches.
他方、近時の基板４は直径６〜８インチの大形
化が可能となり、複数枚の大形基板４を同時にバ
ツチ処理で成膜し、その膜厚分布を±10％以下と
することが要請されている。しかし、かかる要請
に対し従来装置を単純に大型化すると、膜厚分布
を±10％以下にすることが困難になるという問題
点があつた。 On the other hand, recent substrates 4 can be made larger with a diameter of 6 to 8 inches, and it is now possible to form films on multiple large substrates 4 simultaneously by batch processing, with a film thickness distribution of ±10% or less. It is requested. However, simply increasing the size of the conventional device in response to such a request poses a problem in that it becomes difficult to reduce the film thickness distribution to ±10% or less.
(d) 発明の目的
本発明の目的は、半導体装置の生産性を高める
ため基板の大形化に伴う前記問題点を解決し、成
膜の厚さ分布に優れた気相成長装置を提供するこ
とである。(d) Purpose of the Invention The purpose of the present invention is to solve the above-mentioned problems associated with the increase in the size of substrates in order to improve the productivity of semiconductor devices, and to provide a vapor phase growth apparatus with excellent film thickness distribution. That's true.
(e) 発明の構成
本発明は、反応炉内で回転する回転軸と、該回
転軸から放射状に配設された複数枚のサセプタ
と、該サセプタを該回転軸の長さ方向に挟む一対
の整流板と、該回転軸とほぼ同軸に開口する該反
応炉の排気孔と、該サセプタ、整流板を挟んで該
排気孔に対向し開口する該反応炉の反応ガス供給
孔とを具え、
該排気孔に近い一方の該整流板の中心部に該排
気孔と対向する透孔を設け、他方の該整流板の外
周と該反応炉の内壁との間に反応ガスの流通間隙
を有することを特徴とした気相成長装置である。(e) Structure of the Invention The present invention comprises a rotating shaft rotating in a reactor, a plurality of susceptors arranged radially from the rotating shaft, and a pair of susceptors sandwiching the susceptor in the length direction of the rotating shaft. a rectifying plate, an exhaust hole of the reactor opening substantially coaxially with the rotating shaft, and a reaction gas supply hole of the reactor opening facing the exhaust hole with the susceptor and the rectifying plate in between, A through hole facing the exhaust hole is provided in the center of one of the baffle plates near the exhaust hole, and a reaction gas flow gap is provided between the outer periphery of the other baffle plate and the inner wall of the reactor. This is a unique vapor phase growth device.
(f) 発明の実施例
以下に、第２図〜第４図を用いて本発明の実施
例を説明する。(f) Embodiments of the invention Examples of the invention will be described below with reference to FIGS. 2 to 4.
第２図は、本発明の実施例によるサセプタを示
す斜視図である。 FIG. 2 is a perspective view of a susceptor according to an embodiment of the present invention.
第２図において、複数枚例えば10〜50枚の角形
板状サセプタ１１は、上下方向に一対の整流板１
７と１８で挟み、回転軸１０の下端に固着され
る。 In FIG. 2, a plurality of rectangular plate-shaped susceptors 11, for example 10 to 50, are arranged in a pair of rectifying plates 1 in the vertical direction.
It is sandwiched between 7 and 18 and fixed to the lower end of the rotating shaft 10.
石英（SiO2）またはシリコンカーバイト
（SiC）被着のカーボン（グラフアイト）体で形
成し、回転軸１０の半径方向かつ回転軸１０の軸
心と平行に突出する複数枚のサセプタ１１は、等
角度αの放射状に配設され、図示しない基板拘持
機構によつて大形の成膜基板４を装着可能であ
る。 A plurality of susceptors 11 are formed of a carbon (graphite) body coated with quartz (SiO 2 ) or silicon carbide (SiC) and protrude in the radial direction of the rotating shaft 10 and parallel to the axis of the rotating shaft 10. They are arranged radially at equal angles α, and a large film-forming substrate 4 can be mounted thereon by a substrate holding mechanism (not shown).
サセプタ１１の上端面を覆う円板形状の整流板
１７の外径は、放射状に配設された各サセプタ１
１の上端面の外端部が表呈する寸法であり、サセ
プタ１１の下端面を覆う整流板１８は、外径が放
射状に配設された各サセプタ１１の下端面より外
側に突出する寸法とし、中心部に透孔２０をあけ
たドーナツ板形状である。 The outer diameter of the disc-shaped rectifier plate 17 that covers the upper end surface of the susceptor 11 is the same as that of each susceptor 1 arranged radially.
The rectifying plate 18 that covers the lower end surface of the susceptor 11 has an outer diameter that projects outward from the lower end surface of each susceptor 11 arranged radially, It has a donut plate shape with a through hole 20 in the center.
第３図は本発明の実施例による反応炉の要部を
示す断面図、第４図は第３図のＡ−Ａ断面図であ
る。 FIG. 3 is a sectional view showing essential parts of a reactor according to an embodiment of the present invention, and FIG. 4 is a sectional view taken along line AA in FIG.
第３図において、前述のサセプタ１１を長さ方
向（図の高さ方向）を小形化した複数枚のサセプ
タ２１は、それぞれに１枚の大形基板４を装着可
能であり、放射状に配設した複数枚のサセプタ２
１は、上下方向に一対の整流板１７と１８で挟
み、垂下する回転軸１０の下端に固着され、円形
断面の反応炉１２に収容される。ただし、整流板
１８の外径は反応炉１２の内壁に接することな
く、かつ、該内壁との隙間ができるだけ小さくな
るように設定してなり、回転軸１０の軸心と同心
に開口する透孔２０は、反応炉１２の下端中央に
設けた排気孔１４と対向するようになる。 In FIG. 3, a plurality of susceptors 21, which are made smaller in the length direction (height direction in the figure) than the aforementioned susceptor 11, can each be fitted with one large substrate 4, and are arranged radially. multiple susceptors 2
1 is vertically sandwiched between a pair of straightening plates 17 and 18, fixed to the lower end of a hanging rotating shaft 10, and housed in a reactor 12 having a circular cross section. However, the outer diameter of the baffle plate 18 is set so that it does not touch the inner wall of the reactor 12 and the gap with the inner wall is as small as possible, and has a through hole opening concentrically with the axis of the rotating shaft 10. 20 faces the exhaust hole 14 provided at the center of the lower end of the reactor 12.
そこで、反応炉１２の上方部に開口する反応ガ
ス供給孔（図示せず）より供給された反応ガス１
９は、第３図に曲線示し第４図では直線で示す如
く、整流板１７の外側から整流板１８の透孔２０
に向けて流れ、排気孔１４より排出される。 Therefore, the reaction gas 1 is supplied from the reaction gas supply hole (not shown) opened in the upper part of the reactor 12.
9 is a curved line in FIG. 3 and a straight line in FIG.
It flows towards the air and is discharged from the exhaust hole 14.
このよう構成した気相成長装置は、排気孔１４
より反応炉１２内を所定の真空度に排気し、回転
軸１０（サセプタ２１）を低速度で回転させなが
ら、例えば、円筒形状の加熱体１６によりサセプ
タ２１の装着基板４を1000℃に加熱し、次いで反
応炉１２の上方より例えば水素（H2）を流量50
／min、ジクロロシラン（SiH2Cl2）を流量11
／minでほぼ760Torrに充填した状態で基板４
の表面には、厚さ分布が10％以下の気相成長膜が
形成される。なお、この場合の膜成長速度は0.2
〜0.4μｍ／minであり、成膜の厚さは成膜時間を
コントロールして行うことになる。 In the vapor phase growth apparatus configured in this way, the exhaust hole 14
The inside of the reactor 12 is evacuated to a predetermined degree of vacuum, and while the rotating shaft 10 (susceptor 21) is rotated at a low speed, the mounting substrate 4 of the susceptor 21 is heated to 1000° C. using, for example, a cylindrical heating element 16. Then, for example, hydrogen (H 2 ) is supplied from above the reactor 12 at a flow rate of 50
/min, dichlorosilane (SiH 2 Cl 2 ) at a flow rate of 11
/min with approximately 760 Torr filled to the board 4.
A vapor-phase grown film with a thickness distribution of 10% or less is formed on the surface. Note that the film growth rate in this case is 0.2
~0.4 μm/min, and the thickness of the film formation is controlled by controlling the film formation time.
(g) 発明の効果
以上説明したように本発明による気相成長装置
は、直径が５インチ程度であつた従来の基板より
大形の基板に対し、厚さ分布が10％以下の気相成
長膜を堆積可能とし、半導体装置の生産性を向上
せしめた工業的効果が大きい。(g) Effects of the Invention As explained above, the vapor phase growth apparatus according to the present invention can perform vapor phase growth with a thickness distribution of 10% or less on a substrate that is larger than the conventional substrate, which has a diameter of about 5 inches. It has a great industrial effect of making it possible to deposit films and improving the productivity of semiconductor devices.
第１図は従来のサセプタを示す斜視図、第２図
は本発明の実施例によるサセプタの斜視図、第３
図は本発明の実施例による反応炉の要部を示す断
面図、第４図は第３図のＡ−Ａ断面図、である。
図中において、４は成膜基板、１０は回転軸、
１１，２１はサセプタ、１２は反応炉、１４は排
気孔、１７，１８は整流板、１９は反応ガス、２
０は透孔、を示す。
FIG. 1 is a perspective view showing a conventional susceptor, FIG. 2 is a perspective view of a susceptor according to an embodiment of the present invention, and FIG.
The figure is a cross-sectional view showing essential parts of a reactor according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line AA in FIG. 3. In the figure, 4 is a film forming substrate, 10 is a rotation axis,
11 and 21 are susceptors, 12 is a reactor, 14 is an exhaust hole, 17 and 18 are rectifying plates, 19 is a reaction gas, 2
0 indicates a through hole.
Claims (1)
放射状に配設された複数枚のサセプタと、該サセ
プタを該回転軸の長さ方向に挟む一対の整流板
と、該回転軸とほぼ同軸に開口する該反応炉の排
気孔と、該サセプタ、整流板を挟んで該排気孔に
対向し開口する該反応炉の反応ガス供給孔とを具
え、 該排気孔に近い一方の該整流板の中心部に該排
気孔と対向する透孔を設け、他方の該整流板の外
周と該反応炉の内壁との間に反応ガスの流通間隙
を有することを特徴とした気相成長装置。[Claims] 1. A rotating shaft that rotates in a reactor, a plurality of susceptors arranged radially from the rotating shaft, and a pair of rectifying plates that sandwich the susceptors in the length direction of the rotating shaft. , an exhaust hole of the reactor opening substantially coaxially with the rotating shaft, and a reaction gas supply hole of the reactor opening opposite to the exhaust hole with the susceptor and a rectifier plate interposed therebetween; A through hole facing the exhaust hole is provided in the center of one of the rectifier plates, and a reaction gas flow gap is provided between the outer periphery of the other rectifier plate and the inner wall of the reactor. Vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19640183A JPS6090894A (en) | 1983-10-20 | 1983-10-20 | Vapor phase growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19640183A JPS6090894A (en) | 1983-10-20 | 1983-10-20 | Vapor phase growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6090894A JPS6090894A (en) | 1985-05-22 |
| JPS6365639B2 true JPS6365639B2 (en) | 1988-12-16 |
Family
ID=16357250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19640183A Granted JPS6090894A (en) | 1983-10-20 | 1983-10-20 | Vapor phase growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6090894A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149131U (en) * | 1984-03-15 | 1985-10-03 | 株式会社東芝 | Vapor phase growth equipment |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
| JP3181171B2 (en) * | 1994-05-20 | 2001-07-03 | シャープ株式会社 | Vapor phase growth apparatus and vapor phase growth method |
| EP0921557A3 (en) * | 1997-09-30 | 2004-03-17 | Siemens Aktiengesellschaft | Formation of non-homogenous device layer using an inert gas shield |
| JP2015185750A (en) * | 2014-03-25 | 2015-10-22 | 東京エレクトロン株式会社 | Vacuum processing equipment |
| CN106245004A (en) * | 2016-10-10 | 2016-12-21 | 无锡宏纳科技有限公司 | Inside and outside jet-propelled low pressure chemical phase precipitation chamber |
| CN106245111A (en) * | 2016-10-10 | 2016-12-21 | 无锡宏纳科技有限公司 | The wafer support structure in low pressure chemical phase precipitation chamber |
| CN106399970A (en) * | 2016-10-10 | 2017-02-15 | 无锡宏纳科技有限公司 | Circular ring type low pressure chemical gas phase deposition cavity |
| CN111501019A (en) * | 2020-05-13 | 2020-08-07 | 深圳市纳设智能装备有限公司 | Reaction chamber turbine structure for CVD equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144961A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Vapor growth method |
| JPS5347763Y2 (en) * | 1976-08-19 | 1978-11-15 | ||
| JPS577899A (en) * | 1980-06-13 | 1982-01-16 | Hitachi Ltd | Vapor phase reacting apparatus |
-
1983
- 1983-10-20 JP JP19640183A patent/JPS6090894A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6090894A (en) | 1985-05-22 |
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