JPS637028B2 - - Google Patents
Info
- Publication number
- JPS637028B2 JPS637028B2 JP57172661A JP17266182A JPS637028B2 JP S637028 B2 JPS637028 B2 JP S637028B2 JP 57172661 A JP57172661 A JP 57172661A JP 17266182 A JP17266182 A JP 17266182A JP S637028 B2 JPS637028 B2 JP S637028B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- recess
- lead rod
- protrusion
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Powder Metallurgy (AREA)
Description
【発明の詳細な説明】
この発明は、半導体素子の構成部品の製法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing components of a semiconductor device.
タングステン、モリブデン等の高融点金属でつ
くられた１対のチツプ（スラグ）の間にシリコン
ウエハを介装し、上記チツプの外側端部にはそれ
ぞれ金属リード棒を接合したダイオードが知られ
ている。上記チツプとリード棒とを接合してなる
半導体用部品の製造に際して従来採用されてきた
接合方法は、チツプの端面にリード棒を突き合わ
せてスポツト溶接する方法であつたので、両者の
接合強度が低く、使用中にリード棒が脱落しやす
いという大きな欠点があつた。 A diode is known in which a silicon wafer is interposed between a pair of chips (slugs) made of a high-melting point metal such as tungsten or molybdenum, and metal lead rods are connected to the outer ends of each chip. . The bonding method conventionally used to manufacture semiconductor parts by bonding the chip and lead rod described above was to spot-weld the lead rod against the end face of the chip, so the bonding strength between the two was low. However, a major drawback was that the lead rod easily fell off during use.
この発明は上記事情に鑑みてなされたもので、
チツプとリード棒とが強固に接合された半導体用
部品の製法を提供するものであり、これについて
以下に説明する。 This invention was made in view of the above circumstances,
The present invention provides a method for manufacturing semiconductor components in which a chip and a lead rod are firmly bonded, and this will be explained below.
本発明にかかる半導体用部品の製造方法は、芯
部に凹部が形成された高融点金属焼結体からなる
チツプを製造する工程と、得られたチツプにバレ
ル研磨を施して凹部の開口部に内側に突出するバ
リ状突出部を形成する工程と、該凹部に金属リー
ド棒を据え込んでチツプとリード棒とを接合一体
化する工程とを有することを特徴としている。以
下、図面にあらわされた実施例について説明す
る。 The method for manufacturing semiconductor components according to the present invention includes the steps of manufacturing a chip made of a high melting point metal sintered body with a recess formed in the core, and barrel polishing the resulting chip to form a recess opening. The method is characterized by comprising a step of forming a burr-like protrusion projecting inward, and a step of embedding a metal lead rod into the recess and joining the chip and the lead rod together. The embodiments shown in the drawings will be described below.
この半導体用部品１は、タングステン、モリブ
デン等の高融点金属材料の焼結体でつくられたチ
ツプ２と、金属製のリード棒３を接合一体化して
なる。チツプ２は、第１図に示す如く、芯部に軸
方向の凹部４をそなえた円柱体として形成されて
いる。このようなチツプ２は、公知の粉末ヤ金法
例えば原料であるモリブデン等の金属粉末を自動
プレス機等で加圧成形し、還元雰囲気中または真
空中で焼結する方法によつて製造することができ
る。このように粉末成形時に金型で凹部４を成形
する場合は、該凹部に金型抜取り用の抜きテーパ
がつき、開口側が孔底側よりもわずかに径が大き
くなるのが普通である。なお、凹部４は焼結後に
穿設してもよい。 This semiconductor component 1 is made by integrally bonding a chip 2 made of a sintered body of a high melting point metal material such as tungsten or molybdenum, and a metal lead rod 3. As shown in FIG. 1, the chip 2 is formed as a cylindrical body having an axial recess 4 in its core. Such a chip 2 can be manufactured by a known powder metal method, for example, a method in which metal powder such as molybdenum as a raw material is pressure-molded using an automatic press or the like, and then sintered in a reducing atmosphere or in a vacuum. Can be done. When the recess 4 is formed using a metal mold during powder molding, the recess has a taper for removing the mold, and the opening side is usually slightly larger in diameter than the hole bottom side. Note that the recess 4 may be formed after sintering.
第２図は、チツプ２の凹部４開口縁部に内側に
突出するバリ状の突出部５を形成した例をあらわ
す。このような突出部５は、例えば焼結体である
凹部つきのチツプ２にバレル研磨処理を施すこと
によつて製造することができる。バレル研磨とし
ては、垂直面内で高速の遊星運動を行なう容器内
に水と多数のチツプを入れ、いわゆるともずり式
に研磨を行なうようなものが効果的である。この
バレル研磨によつてチツプ２の表面が平滑に仕上
げられるとともに、チツプ同士の衝突によつて凹
部４の開口縁部にダレが生じて、上記突出部５が
開口部のほゞ全周にわたつて環状に形成されるの
である。この突出部５の突出量は、片側で0.02〜
0.1mm、より好ましくは0.04〜0.06mmとするのがよ
い。なお、突出部５は必ずしも全周にわたつて形
成する必要はないが、全周に形成しておく方が有
利である。 FIG. 2 shows an example in which a burr-shaped protrusion 5 that protrudes inward is formed on the opening edge of the recess 4 of the chip 2. Such a protrusion 5 can be manufactured, for example, by subjecting the chip 2, which is a sintered body and has a recess, to a barrel polishing process. An effective barrel polishing method is one in which water and a large number of chips are placed in a container that performs high-speed planetary motion in a vertical plane, and polishing is performed in a so-called tomozu type. By this barrel polishing, the surface of the chip 2 is finished smooth, and the collision between the chips causes sagging at the opening edge of the recess 4, so that the protrusion 5 extends over almost the entire circumference of the opening. It is formed into an annular shape. The amount of protrusion of this protrusion 5 is 0.02 to 0.02 on one side.
The thickness is preferably 0.1 mm, more preferably 0.04 to 0.06 mm. Note that the protrusion 5 does not necessarily have to be formed over the entire circumference, but it is more advantageous to form it over the entire circumference.
つぎに、上記凹部４には、銅、銅合金（例え
ば、銅−ジルコン、銅−クロム）その他の金属材
料でつくられたリード棒３の先端部３ａが据え込
まれる。これによつて、チツプ２とリード棒３と
が接合一体化された半導体用部品１が得られるの
である。このようにして得られた半導体用部品１
は、チツプ２とリード棒３の接合強度の高いすぐ
れたものである。従来の半導体用部品では、チツ
プ２の端面にリード棒３が突き合わされスポツト
溶接されていたので、曲げ方向の力に弱かつた
が、本発明にかかる半導体用部品は、チツプ２に
設けた凹部にリード棒が挿入されているため、曲
げ方向の力に対しても大きな抵抗力を示すのであ
る。なお、凹部４の内径d0とリード棒３の外径d2
の寸法差は、リード棒３の材質、凹部４の内径d0
の大きさ等に応じて最適なものを選べばよい。 Next, the tip 3a of the lead rod 3 made of copper, copper alloy (for example, copper-zircon, copper-chromium), or other metal material is placed in the recess 4. As a result, a semiconductor component 1 in which the chip 2 and the lead rod 3 are joined and integrated is obtained. Semiconductor component 1 obtained in this way
This is an excellent example in which the bonding strength between the chip 2 and the lead rod 3 is high. In conventional semiconductor components, the lead rods 3 were butted against the end face of the chip 2 and spot welded, so they were weak against bending force, but the semiconductor component according to the present invention has a recess formed in the chip 2. Because the lead rod is inserted into the wire, it exhibits a large resistance to force in the bending direction. In addition, the inner diameter d 0 of the recess 4 and the outer diameter d 2 of the lead rod 3
The dimensional difference is the material of the lead rod 3 and the inner diameter of the recess 4 d 0
The most suitable one can be selected depending on the size, etc.
以上のようにして製造した１対の半導体用部品
１，１を第４図に示すようにシリコンウエハ６を
挾んで互いに突き合わせ、そのまわりにガラスモ
ールド７を設けることにより、半導体であるガラ
スモールドダイオード９が得られるのである。 As shown in FIG. 4, the pair of semiconductor components 1, 1 manufactured as described above are butted against each other with a silicon wafer 6 between them, and a glass mold 7 is provided around them, thereby forming a glass mold diode which is a semiconductor. 9 is obtained.
実施例
平均粒度3.0ミクロンのモリブデン粉末にビニ
ール系樹脂からなる造粒剤を添加して造粒し、自
動プレス機を用いて２〜3.5t／cm2の成形圧力で加
圧成形して第１図に示す形状とほゞ同形状の成形
体を得た。これを水素炉中で加熱（最高1100℃ま
で徐々に昇温）して造粒剤を完全に揮発させたの
ち、1850℃で３時間加熱して、比重が真比重の約
95％の焼結体とした。この焼結体には仕上処理と
してバレル研磨を施した。バレル研磨用の装置と
しては、高速遠心バレル機（ナガセ研磨機材社製
サーブ高速遠心バレル機、AN−40FB型）を使
用し、研磨材は使用せず、水とチツプだけで
150r.p.m.で24時間ともずりを行なつた。これに
よつて第２図に示すような形状のチツプ２が得ら
れた。同図において、Ｄ＝1.5mm、ｌ＝2.0mm、d0
＝0.87mm、d1＝0.76mm、d3＝0.77mm、ｔ＝1.0mm、
突出部５の突出量は片側で0.05mmであつた。Example Molybdenum powder with an average particle size of 3.0 microns is granulated by adding a granulating agent made of vinyl resin, and then pressure-molded using an automatic press machine at a molding pressure of 2 to 3.5 t/cm 2 . A molded article having substantially the same shape as shown in the figure was obtained. After heating this in a hydrogen furnace (gradually increasing the temperature to a maximum of 1100℃) to completely volatilize the granulating agent, it was heated at 1850℃ for 3 hours until the specific gravity was approximately the same as the true specific gravity.
It was made into a 95% sintered body. This sintered body was subjected to barrel polishing as a finishing treatment. A high-speed centrifugal barrel machine (Saab high-speed centrifugal barrel machine, AN-40FB model, manufactured by Nagase Polishing Materials Co., Ltd.) was used as the equipment for barrel polishing, and no abrasives were used; only water and chips were used.
It was run for 24 hours at 150rpm. As a result, a chip 2 having a shape as shown in FIG. 2 was obtained. In the same figure, D=1.5mm, l=2.0mm, d 0
=0.87mm, d1 =0.76mm, d3 =0.77mm, t=1.0mm,
The protruding amount of the protruding portion 5 was 0.05 mm on one side.
このチツプ２の凹部４に、外径d2＝0.75mm、長
さＬ＝30mmの銅製リード棒３の先端部を挿入し、
軸方向に加圧してその外周部が凹部内壁に充分密
着するまで据え込んだ。これによつて、目的とす
る半導体用部品が得られた。 Insert the tip of a copper lead rod 3 with outer diameter d 2 = 0.75 mm and length L = 30 mm into the recess 4 of this chip 2,
It was pressed in the axial direction and was upset until its outer circumferential portion was in close contact with the inner wall of the recess. As a result, the intended semiconductor component was obtained.
得られた半導体用部品の接合強度を調べるた
め、引張り試験を行なつてリード棒３が引き抜か
れる荷重（引抜力）を測定した結果は、突出部５
を形成しないものが１〜３Kgであるのに対し、突
出部５を形成したものが５〜６Kgであつた。チツ
プの端部にリード棒を突合せ溶接した従来品の破
断荷重は２Kg以下であり、特に曲げ方向の力や衝
撃力に対する抵抗性に乏しかつた。 In order to examine the bonding strength of the obtained semiconductor parts, a tensile test was conducted and the load (pulling force) at which the lead rod 3 was pulled out was measured.
The weight of those without the protrusion 5 was 1 to 3 kg, while the weight of the one with the protrusion 5 was 5 to 6 kg. The breaking load of a conventional product in which a lead rod was butt welded to the end of the chip was less than 2 kg, and the resistance to bending force and impact force was particularly poor.
以上に説明したように、本発明にかかる半導体
用部品の製造方法は、芯部に凹部を有する焼結体
チツプにバレル研磨を施して凹部の開口縁部に内
向突出部を形成したのち、その凹部へリード棒を
据え込んで一体化するものであるから、チツプと
リード棒との接合強度が強い半導体用部品を大量
生産に適した比較的簡単な工程で得ることができ
るようになつた。 As explained above, the method for manufacturing semiconductor components according to the present invention involves performing barrel polishing on a sintered chip having a recess in the core to form an inward protrusion at the opening edge of the recess. Since the lead rods are integrated into the recessed portions, it has become possible to obtain semiconductor components with strong bonding strength between the chip and the lead rods through a relatively simple process suitable for mass production.
第１図はチツプとリード棒の一部断面側面図、
第２図は突出部つきチツプの一部断面側面図、第
３図は半導体用部品の側面断面図、第４図は半導
体の側面図である。図はいずれも実施例をあらわ
す。
１……半導体用部品、２……チツプ、３……リ
ード棒、４……凹部、５……突出部。
Figure 1 is a partial cross-sectional side view of the tip and lead rod.
FIG. 2 is a partially sectional side view of a chip with a protrusion, FIG. 3 is a side sectional view of a semiconductor component, and FIG. 4 is a side view of the semiconductor. All figures represent examples. DESCRIPTION OF SYMBOLS 1... Semiconductor parts, 2... Chip, 3... Lead rod, 4... Recessed part, 5... Protruding part.
Claims (1)
らなるチツプを製造する工程と、得られたチツプ
にバレル研磨を施して凹部の開口部に内側に突出
するバリ状突出部を形成する工程と、該凹部に金
属リード棒を据え込んでチツプとリード棒とを接
合一体化する工程とを有することを特徴とする半
導体用部品の製造方法。1. A process of manufacturing a chip made of a high melting point metal sintered body with a recess formed in the core, and performing barrel polishing on the obtained chip to form a burr-shaped protrusion that protrudes inward at the opening of the recess. 1. A method for manufacturing a semiconductor component, comprising: a step of mounting a metal lead rod into the recess to join and integrate the chip and the lead rod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172661A JPS5961953A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172661A JPS5961953A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961953A JPS5961953A (en) | 1984-04-09 |
| JPS637028B2 true JPS637028B2 (en) | 1988-02-15 |
Family
ID=15946026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172661A Granted JPS5961953A (en) | 1982-09-30 | 1982-09-30 | Parts for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961953A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5247303B2 (en) * | 1974-12-20 | 1977-12-01 | ||
| JPS5550647A (en) * | 1978-10-03 | 1980-04-12 | Aaru Jii Toomasu Corp | Semiconductor member and method of assembling same |
-
1982
- 1982-09-30 JP JP57172661A patent/JPS5961953A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961953A (en) | 1984-04-09 |
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