JPS637684B2 - - Google Patents
Info
- Publication number
- JPS637684B2 JPS637684B2 JP18075881A JP18075881A JPS637684B2 JP S637684 B2 JPS637684 B2 JP S637684B2 JP 18075881 A JP18075881 A JP 18075881A JP 18075881 A JP18075881 A JP 18075881A JP S637684 B2 JPS637684 B2 JP S637684B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric resonator
- dielectric
- insulating plate
- resonator element
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【発明の詳細な説明】
本発明は小型、安価でしかも高い安定度を有す
る誘電体共振器に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric resonator that is small, inexpensive, and has high stability.
従来、誘電体共振器素子をマイクロストリツプ
ライン等の分布定数回路に電磁的に結合させて誘
電体共振器回路として使用する場合、第1図に示
すように、誘電体共振器素子11を絶縁物の支持
台12の上に固定し基板13の上に設けられたス
トリツプライン14と電磁的に結合させていた。
この誘電体共振器回路の概略の共振周波数は、誘
電体共振器素子11の誘電率と幾何学的寸法で決
まるが、この誘電体共振器素子11は周波数可変
機能を持たないため、共振周波数の微調整は電磁
界のシールド効果を持つ金属ケース15の寸法を
適切な値に設定しかつ周波数調整用ネジ16を可
変することにより行なつていた。このため誘電体
共振器素子11のまわりに金属ケース15を設け
なければならず、共振器回路が大型になるという
欠点があつた。また、ネジ16と誘電体共振器素
子11との中心軸を所定の寸法内におさめるため
に高い寸法精度が必要であり、このため製造コス
トがかさむという欠点があつた。また金属ケース
15の寸法を適切な値に設定しないと不要モード
が発生し、所望の電気特性が得られないという欠
点があつた。さらにこの誘電体共振器回路では、
金属ケース15の熱膨脹によつて共振周波数が温
度とともに変化するという欠点があつた。 Conventionally, when a dielectric resonator element is electromagnetically coupled to a distributed constant circuit such as a microstrip line and used as a dielectric resonator circuit, as shown in FIG. It was fixed on an object support 12 and electromagnetically coupled to a stripline 14 provided on a substrate 13.
The approximate resonant frequency of this dielectric resonator circuit is determined by the dielectric constant and geometric dimensions of the dielectric resonator element 11, but since this dielectric resonator element 11 does not have a frequency variable function, the resonant frequency Fine adjustment was performed by setting the dimensions of the metal case 15, which has an electromagnetic field shielding effect, to an appropriate value and by varying the frequency adjustment screw 16. For this reason, it is necessary to provide a metal case 15 around the dielectric resonator element 11, which has the disadvantage of increasing the size of the resonator circuit. Furthermore, high dimensional accuracy is required to keep the central axes of the screw 16 and the dielectric resonator element 11 within a predetermined dimension, which has the disadvantage of increasing manufacturing costs. Moreover, if the dimensions of the metal case 15 are not set to appropriate values, an unnecessary mode will occur and desired electrical characteristics cannot be obtained. Furthermore, in this dielectric resonator circuit,
There was a drawback that the resonance frequency changed with temperature due to thermal expansion of the metal case 15.
本発明は上記従来の欠点に鑑みてなされたもの
であり、その目的は、小形、安価でしかも高い動
作安定度を有する誘電体共振器を提供することに
ある。 The present invention has been made in view of the above-mentioned conventional drawbacks, and an object thereof is to provide a dielectric resonator that is small, inexpensive, and has high operational stability.
以下本発明の詳細を実施例によつて説明する。 The details of the present invention will be explained below with reference to Examples.
第2図は本発明の誘電体共振器の一実施例の構
成を示す斜視図であり、1は誘電体共振器素子、
7は絶縁板、8はこの絶縁板7上に形成された導
体層である。誘電体共振器素子1は、比誘電率40
〜100程度の比較的大きな誘電率を有するチタン
酸バリウム系等のセラミツクの塊から構成されて
おり、この素子1の誘電率及び幾何学的寸法がこ
の誘電体共振器の概略の共振周波数を決定する。
絶縁板7は誘電体共振器素子1よりも低誘電率の
石英等の絶縁物から構成されており、最終的には
接着剤や低融点ガラス等の結合層を介して素子1
の上面に固着される。この絶縁板7の表面には、
蒸着、メツキ等適宜な手法により導体層8が形成
されている。この導体層8の形成方法の一例は、
まず絶縁板7の表面上に厚み200Å(20nm)程度
のニクロム層を真空蒸着し、さらにこの上に厚み
3000Å程度のAu層を蒸着し、最後にこの上に電
解メツキにより厚み5μm程度のAu層を形成する
ものである。なおこの場合のニクロム層は、絶縁
板7に対する導体層8間の付着強度を高めるため
の下地の機能を果すものであり、この層の厚みは
共振器のQの低下を防ぐため極力小さな値に設定
される。 FIG. 2 is a perspective view showing the configuration of an embodiment of the dielectric resonator of the present invention, in which 1 is a dielectric resonator element;
7 is an insulating plate, and 8 is a conductor layer formed on this insulating plate 7. The dielectric resonator element 1 has a relative dielectric constant of 40
It is composed of a block of ceramic such as barium titanate, which has a relatively large dielectric constant of ~100, and the dielectric constant and geometric dimensions of this element 1 determine the approximate resonant frequency of this dielectric resonator. do.
The insulating plate 7 is made of an insulating material such as quartz having a lower permittivity than the dielectric resonator element 1, and is ultimately connected to the element 1 via a bonding layer such as adhesive or low melting point glass.
is fixed to the top surface of the On the surface of this insulating plate 7,
The conductor layer 8 is formed by an appropriate method such as vapor deposition or plating. An example of a method for forming the conductor layer 8 is as follows:
First, a nichrome layer with a thickness of about 200 Å (20 nm) is vacuum-deposited on the surface of the insulating plate 7, and then a nichrome layer with a thickness of
An Au layer with a thickness of about 3000 Å is deposited, and finally an Au layer with a thickness of about 5 μm is formed on top of this by electrolytic plating. Note that the nichrome layer in this case functions as a base to increase the adhesion strength between the conductor layer 8 and the insulating plate 7, and the thickness of this layer is kept as small as possible to prevent a decrease in the Q of the resonator. Set.
このように構成した誘電体共振器において、共
振周波数は近似的に誘電体共振器素子1の誘電率
と幾何学的寸法で決定される。このとき電磁エネ
ルギのほとんどは誘電率の高い誘電体共振器素子
1の内部に存在するが、その一部は誘電体共振器
素子1の外部に洩れている。外部に洩れ出す電磁
エネルギの量は、誘電体共振器素子1の近傍に導
体層8を置きこの導体層8の位置を変えることに
よつて制御することができる。導体層8は電磁エ
ネルギの洩れ出しを制御するためのものであり、
所定厚みの絶縁板7は、導体層8を素子1から所
定距離だけ離間させて保持するためのスペーサと
しての機能を果す。絶縁板7の材料としては、こ
の誘電体共振器のQを高めるうえで石英等の高周
波損失が小さいものが望ましい。誘電体共振器素
子1の外部に洩れる電磁エネルギの量は絶縁板7
の厚み、すなわち導体層8の位置に依存するの
で、第2図のように構成した誘電体共振器におい
て、その共振周波数は導体層8を付した絶縁板7
の厚みを変えることにより調整することができ
る。 In the dielectric resonator configured in this manner, the resonant frequency is approximately determined by the dielectric constant and geometric dimensions of the dielectric resonator element 1. At this time, most of the electromagnetic energy exists inside the dielectric resonator element 1 having a high dielectric constant, but a part of it leaks to the outside of the dielectric resonator element 1. The amount of electromagnetic energy leaking to the outside can be controlled by placing a conductor layer 8 near the dielectric resonator element 1 and changing the position of the conductor layer 8. The conductor layer 8 is for controlling leakage of electromagnetic energy,
The insulating plate 7 having a predetermined thickness functions as a spacer for holding the conductor layer 8 at a predetermined distance from the element 1. As the material for the insulating plate 7, a material with low high frequency loss such as quartz is desirable in order to increase the Q of this dielectric resonator. The amount of electromagnetic energy leaking to the outside of the dielectric resonator element 1 is determined by the insulating plate 7.
, that is, the position of the conductor layer 8. Therefore, in the dielectric resonator configured as shown in FIG.
It can be adjusted by changing the thickness.
具体的には、厚みの異なる絶縁板7を数種類用
意しておき第3図示の回路において誘電体共振器
の共振周波数を観測しながら、所望の共振周波数
が得られるように適切な厚みの絶縁板7を誘電体
共振器素子1上に載置し、所望の特性を与える厚
みの絶縁板7を選択したのちこれを接着剤等を用
いて素子1上に取付けるようにすれば、絶縁板7
の厚さに対応した階段的な共振周波数調整を行な
うことができる。絶縁板7の厚みを数多く用意し
ておけば、ほとんど連続的に共振周波数調整を行
なうことができる。なお、本実施例では誘電体共
振器素子1および絶縁板7の断面形状を円形とし
ているが他の形状でも同様の作用効果が奏され
る。 Specifically, several types of insulating plates 7 with different thicknesses are prepared, and while observing the resonant frequency of the dielectric resonator in the circuit shown in Figure 3, the insulating plates 7 with an appropriate thickness are selected to obtain the desired resonant frequency. 7 is placed on the dielectric resonator element 1, and after selecting an insulating plate 7 having a thickness that provides the desired characteristics, the insulating plate 7 is mounted on the element 1 using an adhesive or the like.
It is possible to perform stepwise resonance frequency adjustment corresponding to the thickness of the material. By preparing the insulating plates 7 with a large number of thicknesses, the resonance frequency can be adjusted almost continuously. In this embodiment, the cross-sectional shapes of the dielectric resonator element 1 and the insulating plate 7 are circular, but the same effects can be obtained even with other shapes.
第4図は本発明の他の実施例の構成を示す斜視
図である。本図中第2図と同一の参照符号を付し
た要素は第2図に関し既に説明した要素と同一の
要素であり、これについての重複した説明を要し
ないであろう。この実施例においては、導体層8
が絶縁板7の全表面上にではなくその周辺部にの
み形成されている。誘電体共振器素子1の外部に
洩れる電磁エネルギの量は導体層8の面積に依存
する。したがつて、この共振器を第5図示のよう
な回路に組込んで電気特性を観測しながらレーザ
トリミング等によつて導体層8を適切な面積だけ
除去すれば、その面積に対応して誘電体共振器素
子1から外部に洩れる電磁エネルギ量を調整する
ことができ、その結果この誘電体共振器の共振周
波数を所望の値に設定することができる。本実施
例では導体層8の除去部分を円形としているが、
他の形状でも同様の作用・効果が奏される。 FIG. 4 is a perspective view showing the structure of another embodiment of the present invention. Elements in this figure labeled with the same reference numerals as in FIG. 2 are the same elements as those already explained in connection with FIG. 2, and a redundant explanation thereof will not be necessary. In this embodiment, the conductor layer 8
is formed not on the entire surface of the insulating plate 7 but only at its periphery. The amount of electromagnetic energy leaking to the outside of the dielectric resonator element 1 depends on the area of the conductor layer 8. Therefore, by incorporating this resonator into a circuit as shown in Figure 5 and removing an appropriate area of the conductor layer 8 by laser trimming or the like while observing the electrical characteristics, the dielectric layer 8 can be removed in accordance with the area. The amount of electromagnetic energy leaking to the outside from the body resonator element 1 can be adjusted, and as a result, the resonant frequency of this dielectric resonator can be set to a desired value. In this embodiment, the removed portion of the conductor layer 8 is circular, but
Similar actions and effects can be achieved with other shapes.
第6図は第2図に示した誘電体共振器を用いて
第3図に示した誘電体共振器回路を構成したとき
の共振周波数調整の具体例である。共振周波数は
絶縁板の厚みが増加するにしたがい低下する。絶
縁板の厚みを0.5mmから3mmまで変化させると、
共振周波数は約10%変化する。なお、第6図は誘
電体共振器素子の寸法を直径7mm,厚さ2.8mmと
し、絶縁板として石英を用いてその寸法を直径11
mmとしたときの例である。 FIG. 6 shows a specific example of resonant frequency adjustment when the dielectric resonator circuit shown in FIG. 3 is constructed using the dielectric resonator shown in FIG. 2. The resonant frequency decreases as the thickness of the insulating plate increases. When the thickness of the insulating plate is changed from 0.5mm to 3mm,
The resonant frequency changes by about 10%. In addition, in Figure 6, the dimensions of the dielectric resonator element are 7 mm in diameter and 2.8 mm in thickness, and the dimensions are 11 mm in diameter using quartz as an insulating plate.
This is an example when it is set to mm.
第7図は、第4図に示した誘電体共振器を用い
て第5図に示した誘電体共振器回路を構成したと
きの共振周波数調整の具体例である。共振周波数
は、導体層8を除去した部分の直径が増加するに
したがい低下する。なお、第7図は誘電体共振器
素子の寸法を直径7mm,厚さ2.8mmとし、絶縁板
7として石英を用い、その寸法を直径7mm,厚さ
0.5mmとしたときの例である。 FIG. 7 shows a specific example of resonant frequency adjustment when the dielectric resonator circuit shown in FIG. 5 is constructed using the dielectric resonator shown in FIG. 4. The resonant frequency decreases as the diameter of the portion where the conductor layer 8 is removed increases. In Fig. 7, the dimensions of the dielectric resonator element are 7 mm in diameter and 2.8 mm in thickness, and quartz is used as the insulating plate 7, and the dimensions are 7 mm in diameter and 2.8 mm in thickness.
This is an example when it is 0.5mm.
上述した実施例においては誘電体共振器素子の
頂面上に絶縁板を装着したが、この素子の周囲に
漏洩する電磁エネルギーはほぼ等方的であるか
ら、絶縁板を装着すべき面は上述した頂面に限定
されるものではなく、側面であつてもよいし、あ
るいは頂面と側面の双方であつてもよい。また誘
電体共振器素子を吊下げて保持する場合等におい
ては、素子の下面に絶縁板を装着することもでき
る。 In the above embodiment, an insulating plate was attached to the top surface of the dielectric resonator element, but since the electromagnetic energy leaking around this element is almost isotropic, the surface to which the insulating plate should be attached is as described above. It is not limited to the top surface, but may be the side surface, or both the top surface and the side surface. Further, when the dielectric resonator element is hung and held, an insulating plate can be attached to the lower surface of the element.
また、絶縁板として石英を使用する例を説明し
たが、低損失で低誘電率の誘電体材料であれば、
テフロン等の商品名で市販されている4ふつ化エ
チレンやセラミツク等適宜なものを使用すること
ができる。 Also, although we have explained an example of using quartz as an insulating plate, if it is a dielectric material with low loss and low dielectric constant,
Appropriate materials such as tetrafluoroethylene and ceramics, which are commercially available under trade names such as Teflon, can be used.
以上詳細に説明したように、本発明は誘電体共
振器素子近傍の絶縁物の板厚で選択された位置に
選択された面積の導体を設置することにより、こ
の素子の周辺に漏洩する電磁エネルギー量を調整
し、これによつて誘電体共振器の共振周波数を所
望の値に設定する構成であるから、従来の誘電体
共振回路におけるように金属ケースや周波数調整
用ネジが不要となり、この結果、回路の小形化及
び製造コストの低減が可能である。また、金属ケ
ースの寸法の不適切さに起因する不要モードの発
生の問題も伴わず、さらには金属ケースの熱膨脹
等に伴う動作特性の変動も生ぜず、安定度が極め
て向上するという利点がある。 As explained in detail above, the present invention can reduce the electromagnetic energy leaking around the dielectric resonator element by installing a conductor with a selected area at a position selected by the thickness of the insulator near the dielectric resonator element. This configuration allows the resonant frequency of the dielectric resonator to be set to a desired value, eliminating the need for a metal case or frequency adjustment screws as in conventional dielectric resonant circuits. , it is possible to downsize the circuit and reduce manufacturing costs. In addition, there is no problem of unnecessary modes occurring due to inappropriate dimensions of the metal case, and there is no change in operating characteristics due to thermal expansion of the metal case, which has the advantage of extremely improved stability. .
第1図は従来の誘電体共振器回路の構成の一例
を示す断面図、第2図は本発明の誘電体共振器の
一実施例を示す斜視図、第3図は第2図示の誘電
体共振器を用いた誘電体共振回路の構成の一例を
示す断面図、第4図は本発明の誘電体共振器の他
の実施例を示す斜視図、第5図は第4図示の誘電
体共振器を用いた誘電体共振回路の構成の一例を
示す断面図、第6図は第3図示の共振回路の特性
の一例を示す特性図、第7図は第5図の共振回路
の特性の一例を示す特性図。
1,11…誘電体共振器素子、7…絶縁物の
板、8…導体層、12…絶縁物の支持台、13…
基板、14…マイクロストリツプライン、15…
金属ケース、16…周波数微調用ネジ。
FIG. 1 is a cross-sectional view showing an example of the configuration of a conventional dielectric resonator circuit, FIG. 2 is a perspective view showing an embodiment of the dielectric resonator of the present invention, and FIG. 3 is a dielectric shown in FIG. FIG. 4 is a cross-sectional view showing an example of the configuration of a dielectric resonator circuit using a resonator, FIG. 4 is a perspective view showing another embodiment of the dielectric resonator of the present invention, and FIG. 5 is a dielectric resonance circuit shown in FIG. 6 is a characteristic diagram showing an example of the characteristics of the resonant circuit shown in Fig. 3, and Fig. 7 is an example of the characteristics of the resonant circuit shown in Fig. 5. Characteristic diagram showing. DESCRIPTION OF SYMBOLS 1, 11... Dielectric resonator element, 7... Insulator plate, 8... Conductor layer, 12... Insulator support base, 13...
Substrate, 14... Microstrip line, 15...
Metal case, 16...Screw for frequency fine adjustment.
Claims (1)
数回路に共振特性を付与する誘電体共振器素子を
備えた誘電体共振器であつて、前記誘電体共振器
素子の少くとも1つの面上には該誘電体共振器素
子の誘電率よりも低い誘電率を有する所定厚みの
絶縁物の板が装着されており、該絶縁物の板の前
記誘電体共振器素子に接する面と対向する面上の
少くとも一部には所定面積の導体層が形成されて
おり、かつ前記絶縁物の板の所定厚み及び前記導
体層の所定面積は前記誘電体共振素子の誘電率及
び寸法と共に該誘電体共振器の共振周波数を定め
るように選択されていることを特徴とする誘電体
共振器。1 A dielectric resonator comprising a dielectric resonator element that is electromagnetically coupled to a distributed constant circuit to impart resonance characteristics to the distributed constant circuit, the dielectric resonator having at least one surface of the dielectric resonator element. is attached with an insulating plate having a predetermined thickness having a dielectric constant lower than that of the dielectric resonator element, and a surface of the insulating plate facing the surface in contact with the dielectric resonator element. A conductor layer having a predetermined area is formed on at least a portion of the insulating plate, and the predetermined thickness of the insulator plate and the predetermined area of the conductor layer are based on the dielectric constant and dimensions of the dielectric resonant element. A dielectric resonator, characterized in that the material is selected to determine the resonant frequency of the resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18075881A JPS5881304A (en) | 1981-11-11 | 1981-11-11 | Dielectric resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18075881A JPS5881304A (en) | 1981-11-11 | 1981-11-11 | Dielectric resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5881304A JPS5881304A (en) | 1983-05-16 |
| JPS637684B2 true JPS637684B2 (en) | 1988-02-18 |
Family
ID=16088798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18075881A Granted JPS5881304A (en) | 1981-11-11 | 1981-11-11 | Dielectric resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5881304A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221913A (en) * | 1990-09-26 | 1993-06-22 | Matsushita Electric Industrial Co., Ltd. | Dielectric resonator device with thin plate type dielectric heat-radiator |
| US5517203A (en) * | 1994-05-11 | 1996-05-14 | Space Systems/Loral, Inc. | Dielectric resonator filter with coupling ring and antenna system formed therefrom |
| WO2011015603A2 (en) | 2009-08-04 | 2011-02-10 | Eaton Srl | Lost motion valve control apparatus |
-
1981
- 1981-11-11 JP JP18075881A patent/JPS5881304A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5881304A (en) | 1983-05-16 |
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