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JPS639020B2 - - Google Patents
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JPS639020B2 - - Google Patents

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Publication number
JPS639020B2
JPS639020B2 JP57039869A JP3986982A JPS639020B2 JP S639020 B2 JPS639020 B2 JP S639020B2 JP 57039869 A JP57039869 A JP 57039869A JP 3986982 A JP3986982 A JP 3986982A JP S639020 B2 JPS639020 B2 JP S639020B2
Authority
JP
Japan
Prior art keywords
copper
complexing agent
solution
exchange membrane
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57039869A
Other languages
Japanese (ja)
Other versions
JPS58157959A (en
Inventor
Hideo Honma
Yoshiaki Suzuki
Yasuhiro Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KANTO KASEI KOGYO KK
Original Assignee
KANTO KASEI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KANTO KASEI KOGYO KK filed Critical KANTO KASEI KOGYO KK
Priority to JP57039869A priority Critical patent/JPS58157959A/en
Priority to US06/372,133 priority patent/US4425205A/en
Priority to DE8282400798T priority patent/DE3272286D1/en
Priority to EP82400798A priority patent/EP0088852B1/en
Priority to KR8201949A priority patent/KR870001547B1/en
Priority to GB08212818A priority patent/GB2117003B/en
Priority to CA000418017A priority patent/CA1220759A/en
Publication of JPS58157959A publication Critical patent/JPS58157959A/en
Publication of JPS639020B2 publication Critical patent/JPS639020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はエチレンジアミン四酢酸(EDTA)
などの錯化剤を含む無電解銅めつき浴の再生方法
およびそれに使用する装置に関し、特には、めつ
き浴中から回収した錯化剤を用い、アノード溶解
により形成した銅イオンをEDTA−銅錯化物と
して供給する無電解めつき浴の再生方法およびそ
れに使用する装置に関する。 無電解めつきは、それが電気めつきの下地めつ
きとして用いられるものであろうとも、また、そ
れ自体で用いられるものであろうとも、その反応
に伴なつて、めつき浴中の銅イオン、PHすなわち
水酸化イオンおよび還元剤が減少し、その減少に
応じた反応副生物が生じる。これは、無電解めつ
き反応が不可逆反応であるため不可避の現象であ
る。 一方、無電解銅めつき皮膜の品質は、めつき浴
組成およびめつき条件によつて大きく左右され
る。つまり、めつき浴中の反応副生成物による塩
濃度の増大につれて無電解銅めつき皮膜の特性や
品質が悪化するし、めつき反応速度が変化してく
る。 ところで、プリント配線板のための無電解銅め
つき、中でもセミアデイテイブまたはフルアデイ
テイブ法により作製されるプリント配線板におい
ては、その無電解めつきの皮膜物性は、電解銅め
つきでその殆んどの回路を形成する従来のサブト
ラクテイブ法における単なるスルホールつまり導
体化のみを目的とする無電解めつきの皮膜物性に
比べると、はるかに良質な皮膜の形成が要求され
る。つまり、無電解銅めつき皮膜の物性がピロリ
ン酸銅めつきや硫酸銅めつきに代表される電気銅
めつきのそれと同じようなものでなければ、同等
のプリント配線板は得られないし、また、めつき
皮膜のコントロールの点においても、無電解銅め
つきの反応速度のコントロールが非常に重要にな
つてくる。そのため、無電解銅めつき浴組成は極
力一定した濃度に管理され、かつ、反応副生物も
極力少なくしなければならない。 従来は、無電解めつき反応に伴なつて減少する
Cu2+、OH-、還元剤を手動もしくは自動分析、
または被めつき体の処理量とめつき時間から推測
して、めつき浴中のこれら成分濃度が所定濃度に
達した時、別途用意した硫酸銅溶液、水酸化ナト
リウム溶液および還元剤たとえばホルムアルデヒ
ドを固体もしくは水溶液状態で、それぞれ一定量
を加えて、浴濃度を調節していた。一方、これに
伴ない硫酸ナトリウム、ギ酸ソーダさらにはメタ
ノール、エタノールなどのアルコール類が蓄積さ
れてくる。そこで、これら反応副生成物が増大す
ると、めつき不良が増加するため、経験的にある
浴寿命まで使用すると浴の一部または全部を廃棄
し、新しいめつき浴と更新していた。 しかしながら、この方法ではコストが高くなる
ばかりでなく、品質のバラツキ、作業性の悪化な
どの弊害を招き、特に上述の如く高品質の無電解
めつき皮膜が要求される場合においては問題であ
つた。また、めつき液を更新した場合の廃液の処
理も問題であつた。すなわち、老廃液中の錯化剤
に対するCOD対策、BCD対策等の無害化処理が
必要となり、したがつて、公害規制の点からいつ
て無害化処理費用の増大を招くばかりでなく、廃
棄すること自体が難しくなつてきている社会情勢
に対応できない。 本発明は、上記の如き従来技術の欠点を解決す
ることを目的とするものであり、反応副生成物の
蓄積が少なく安定した無電解めつきが行なえ、し
かも、廃液処理の問題も大巾に低減しうる無電解
めつき浴の再生方法およびその装置を用いること
を特徴とする。 すなわち、本発明の無電解めつき浴の再生方法
は、以下の(イ)〜(ニ)の工程を含むことを特徴とす
る。 (イ) 錯化剤を含む無電解銅めつき浴から無電解め
つき液の一部もしくは全部を連続的または間欠
的に取り出して、該液中の銅イオンを該液中か
ら分離除去する工程。 (ロ) この液を酸性にして錯化剤を析出せしめて回
収する工程。 (ハ) イオン交換膜により仕切つて、銅を陽極とす
る陽極室および陰極を配設した陰極室を設け、
該陰極室にはアルカリ性溶液(前記イオン交換
膜がアニオン交換膜の場合)または酸性溶液
(前記イオン交換膜がカチオン交換膜の場合)
を入れ、一方、陽極室には前記回収錯化剤を導
入し、前記両極間に直流電流を通電する工程。 (ニ) この陽極室内での溶液を無電解めつき浴にリ
サイクルする工程。 また、本発明の無電解めつき浴の再生装置は、
以下の(a)〜(b)の装置を構成要素として含む。 (a) 無電解銅めつき液中の銅キレートを分解し、
銅成分を沈殿させる銅沈殿装置。 (b) 溶液の液性を変化させ、錯化剤を沈殿、回収
する錯化剤回収装置。 (c) イオン交換膜で仕切られて陽極室および陰極
室が形成され、該陽極室には銅からなる陽極が
配設され該陰極室内には陰極が配設された電解
装置。 以下、添付図面に沿つて本発明をさらに詳細に
説明する。 第1図は本発明のフロー図である。無電解めつ
き浴12には銅イオン、水酸化イオン(PH調整
剤)、還元剤、錯化剤を含み、さらに種々の助剤
を含むことができる。無電解銅めつきが進行する
につれて、銅イオン、水酸化イオンおよび還元剤
が消費され、一方、ギ酸ナトリウム、メチルアル
コールなど(還元剤としてホルムアルデヒドを使
用した場合)が副生する。また、銅イオンが硫酸
銅として、また、水酸化イオンが水酸化ナトリウ
ムとして加えられた場合は、硫酸ナトリウムが蓄
積されてくる。そこで、消費分がサイクル系およ
び非サイクル系からそれぞれライン13および1
5により供給されると共に、めつき液(副生物を
含む)の一部もしくは全部が連続的または間欠的
にめつき浴12から取り出される。なお、ここで
間欠的とは一定周期をもたず単に非連続的に取り
出される場合も含む。 第1図は供給量に応じて一部をオーバーフロー
して連続的に取り出す場合について示しており、
オーバーフローしためつき液12はライン17を
経て濾過器19(省略することもできる。)を介
して供給口より銅沈殿装置21に導かれる。銅沈
殿装置21では銅イオンの沈殿、除去が行なわれ
る。銅イオンの分離は、たとえば、以下のような
方法の1つまたは2つ以上の組合せ等により銅キ
レートを分解して銅を金属銅もしくは銅酸化物と
して沈殿することにより行なわれる。 (1) 銅板、銅箔、銅粉などの金属銅を液中に添加
する。 (2) Pd2+などの触媒を液中に添加する。 (3) 液を高温かつ高PHに維持する。 また、銅の除去はこれら沈殿除去とは別に電解
除去によつても行なわれる。たとえば、無電解銅
めつき液中に不溶性陽極および陰極を配して直流
電流を通電して陰極上に銅を析出せしめて、該浴
中の銅イオンを除去する。 したがつて、銅沈殿装置21は、所望により銅
粉、Pd2+アルカリ剤などの投入部材であるいは
加熱部材を含むことができ、さらに上記反応を速
やかに行なうために撹拌部材を含むことができ
る。また、陽極および陰極を配設することもでき
る。沈殿した銅成分は、適宜、バルブ24から排
出される。 銅イオンの沈殿除去された溶液は、排出口から
ライン23を経て濾過器25(省略することもで
きる。)を介して錯化剤回収装置27に導かれる。
錯化剤回収装置にはライン28を経て酸を導くこ
とができ、この装置内の液性を錯化剤が析出する
に十分に酸性とすることにより、錯化剤が析出す
る。好適なPH範囲は錯化剤によつて異なるが、た
とえばEDTAの場合はPH4.0以下が一般的であり、
好ましくはPH2.0以下、さらに好ましくはPH1.0以
下である。液性の調整には一般の酸が適当であ
る。たとえば、硫酸、塩酸などが例示できる。 第2図は錯化剤としてEDTAを用いた場合の
回収率とPHとの関係を示すグラフである。液性を
PH2.0以下とすることにより十分にEDTAを回収
することができ、PH1.0以下とすることがさらに
好ましいことが判る。なお、本例においては硫酸
でPHを調整した。 このように、無電解銅めつき浴からの錯化剤の
分離は、銅キレート剤の分解、錯化剤の析出分離
により達成されるが、このプロセスの適用できる
錯化剤としては、EDTAの他に、ロツシエル
(酒石酸ナトリウムカリウム)、エチレンジアミン
テトラミン、トリエタノールアミン、ジエタノー
ルアミンなど多くの公知の無電解銅めつき用錯化
剤がある。 析出した錯化剤はライン29を経て電解装置3
1の陽極室33に導かれる。なお、この際、錯化
剤は必要により洗浄さらには乾燥してもよく、さ
らに回収錯化剤は固形状態で供給してもよく、ま
た、予めアルカリ溶液に溶解して溶液状態で電解
装置31の陽極室33に導いてもよい。 電解装置31はイオン交換膜37に仕切られて
陽極室33および陰極室35が形成されている。
そして、陽極室33には銅からなる陽極39が配
設され、一方、陰極室35には陰極41が配設さ
れている。陰極41としては、ステンレス、カー
ボンなどの陰極水溶液に不溶性のものが好まし
い。 陽極室33には回収錯化剤が固体状態、液体状
態などで供給されると共に、その液性は錯化剤が
溶解可能な液性に保たれる。たとえばEDTAの
場合はPH4.0以上が一般的であり、好ましくはPH
7.0以上である。 (i)陽極室35にアルカリ性溶液が入れられる場
合は、イオン交換膜としてアニオン交換膜が用い
られ、また、(ii)陰極室35に酸性溶液が入れられ
る場合は、イオン交換膜としてカチオン交換膜が
用いられる。 両極間、すなわち陽極39および陰極41間に
直流電流を通電して電解すると、銅が溶解して陽
極室33中に銅イオンが生成すると共に、このイ
オンはライン29を経て供給される錯化剤と銅錯
化物を形成し、ついで、この銅錯化物はライン1
3から無電解めつき浴11にリサイクルされる。 陰極室35の液性がアルカリ性の場合は、電解
に伴なつてOH-イオンがイオン交換膜37(ア
ニオン交換膜)を通過して陽極室33に至り、そ
の結果、ライン13より消耗した銅イオン(錯化
合物として)および水酸イオンがめつき浴11内
に供給される。この場合は無電解めつきに必要な
水酸化イオンが銅イオンと共に供給される点にお
いて至便である。 陰極室35の液性が酸性の場合は、該室からの
OH-イオンの供給はなく、別途供給する必要が
あるが、これはNaOHなどとして供給可能であ
る。 このように銅イオン(錯化合物として)あるい
は、さらにはOH-イオンはライン13より供給
され、また、還元剤等はライン15からもしくは
15′を経て供給される。以上、銅イオンの分離、
錯化剤の回収、電解による銅イオンの溶出を別々
の槽で行なう場合について説明したが、上記各操
作を1つの槽内によつて行なうことも可能であ
る。 第3図は電流密度とアノード溶解効率との関係
を示すグラフである。これは第1図に示した電解
装置を用い、陽極室中にEDTA・4Na0.08mol/
を、陰極室中にNaOH0.1mol/を入れ、陽
極として0.5dm2の銅板を陰極として0.5dm2の18−
8ステンレス用い、液温50℃で行なつた。 第4図は同様に銅イオンとEDTAとの濃度比
R(R=〔EDTA〕/〔Cu2+〕)と、アノード溶解
効率との関係を示すグラフである。EDTA濃度
を変化させた以外は第4図と同様にして行なつ
た。銅の錯化剤であるEDTA濃度が高い方が、
電流効率よく溶解し、したがつて、錯化剤を所定
濃度以上に保つことにより効率よく溶解補給する
ことができる。 第5図は陽極室の液温とアノード溶解効率の関
係を示すグラフである。これは、第2図と同一の
両極室組成、電流値2A、通電量3600クローン、
陽極電流密度3A/dm2、陰極電流密度4A/dm2
で行なつた。陽極室の液温が高い方が電流効率よ
く銅が溶解することが判る。たとえばプリント配
線板のように、めつきの高速化とめつき被膜の物
性を厳しく要求される無電解めつきでは、めつき
浴温が極力高い状態で使用するのが理想的である
ので、一層効果的である。 以上説明したように、本発明によれば、無電解
めつき液の少なくとも一部を取り出し、これから
錯化剤を回収し、この錯化剤を用いて銅錯化合物
として消費された銅分を供給することにより、硫
酸ナトリウムやギ酸ナトリウムあるいはアルコー
ルといつた副生成物の無電解銅めつき浴中への蓄
積が非常に少なくなり、極端には硫酸ナトリウム
の蓄積はゼロになり、電解浴の大巾な長寿命化が
可能となり、高品質の無電解めつきを安定に行な
うことができる。また、従来はめつき廃液の
COD、BOD対策が公害上大きな問題となつてい
たが、めつき浴の長寿命化により浴を廃棄せずに
すみ、しかもEDTAなどの高価な錯化剤を回収
して有効に利用することができる。 実験例 EDTA・4Na 30g/ CuSO4・5H2O 6g/ パラホルムアルデヒド 7g/ PH(NaOHで調整) 11.8 の浴組成(浴量5)を用い、温度50℃で、ガラ
スエポキシ銅張積層板に無電解めつきを施した。
このとき、第1表に示すように浴中に硫酸ナトリ
ウムを添加し、その影響を調べた。
The present invention uses ethylenediaminetetraacetic acid (EDTA)
Regarding a method for regenerating an electroless copper plating bath containing a complexing agent such as EDTA-Cu The present invention relates to a method for regenerating an electroless plating bath supplied as a complex and an apparatus used therein. In electroless plating, whether it is used as a base plating for electroplating or used on its own, copper ions in the plating bath are removed as a result of the reaction. , PH, i.e., hydroxide ion and reducing agent, are reduced, and reaction by-products are generated according to the reduction. This is an unavoidable phenomenon because the electroless plating reaction is an irreversible reaction. On the other hand, the quality of an electroless copper plating film is greatly influenced by the plating bath composition and plating conditions. That is, as the salt concentration due to reaction by-products in the plating bath increases, the properties and quality of the electroless copper plating film deteriorate and the plating reaction rate changes. By the way, in electroless copper plating for printed wiring boards, especially in printed wiring boards produced by semi-additive or full additive methods, the physical properties of the electroless plating film are that most of the circuits are formed by electrolytic copper plating. Compared to the conventional subtractive method, which uses electroless plating for the sole purpose of forming through-holes or conductors, it is required to form a film of much better quality. In other words, unless the physical properties of the electroless copper plating film are similar to those of electrolytic copper plating, such as copper pyrophosphate plating and copper sulfate plating, equivalent printed wiring boards cannot be obtained. In terms of controlling the plating film, controlling the reaction rate of electroless copper plating is also very important. Therefore, the composition of the electroless copper plating bath must be controlled to a constant concentration as much as possible, and reaction by-products must be minimized as much as possible. Conventionally, it decreases with the electroless plating reaction.
Manual or automatic analysis of Cu 2+ , OH - and reducing agents,
Or, when the concentration of these components in the plating bath reaches a predetermined concentration, estimated from the amount of the object to be plated and the plating time, a separately prepared copper sulfate solution, sodium hydroxide solution and a reducing agent such as formaldehyde are added to the solid state. Alternatively, the bath concentration was adjusted by adding a certain amount of each in the form of an aqueous solution. On the other hand, along with this, sodium sulfate, sodium formate, and alcohols such as methanol and ethanol are accumulated. Therefore, as the amount of these reaction by-products increases, plating defects increase. According to experience, after a certain bath life has been reached, part or all of the bath is discarded and replaced with a new plating bath. However, this method not only increases the cost, but also causes disadvantages such as uneven quality and poor workability, which is a problem especially when a high-quality electroless plating film is required as mentioned above. . Furthermore, there was also a problem in the treatment of waste liquid when the plating liquid was renewed. In other words, detoxification treatment such as COD countermeasures and BCD countermeasures is required for the complexing agent in the waste liquid, which not only increases the cost of detoxification treatment from the point of view of pollution control, but also requires disposal. They are unable to respond to the social situation, which is becoming increasingly difficult. The present invention aims to solve the above-mentioned drawbacks of the prior art, and allows stable electroless plating with less accumulation of reaction by-products, and also solves the problem of waste liquid treatment. The present invention is characterized by using a method of regenerating an electroless plating bath and an apparatus thereof that can reduce the amount of electroless plating bath. That is, the method for regenerating an electroless plating bath of the present invention is characterized by including the following steps (a) to (d). (b) A step of continuously or intermittently taking out part or all of the electroless plating solution from an electroless copper plating bath containing a complexing agent, and separating and removing copper ions in the solution. . (b) A step of acidifying this liquid to precipitate the complexing agent and recovering it. (c) An anode chamber with a copper anode and a cathode chamber with a cathode separated by an ion exchange membrane,
The cathode chamber contains an alkaline solution (if the ion exchange membrane is an anion exchange membrane) or an acidic solution (if the ion exchange membrane is a cation exchange membrane).
On the other hand, the recovered complexing agent is introduced into the anode chamber, and a direct current is passed between the two electrodes. (d) A process of recycling the solution in this anode chamber into an electroless plating bath. Furthermore, the electroless plating bath regeneration device of the present invention includes:
It includes the following devices (a) to (b) as constituent elements. (a) Decompose the copper chelate in the electroless copper plating solution,
A copper precipitation device that precipitates copper components. (b) A complexing agent recovery device that changes the liquid properties of the solution to precipitate and recover the complexing agent. (c) An electrolytic device in which an anode chamber and a cathode chamber are formed by partitioning with an ion exchange membrane, an anode made of copper is disposed in the anode chamber, and a cathode is disposed in the cathode chamber. Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. FIG. 1 is a flow diagram of the present invention. The electroless plating bath 12 contains copper ions, hydroxide ions (PH adjuster), a reducing agent, a complexing agent, and can further contain various auxiliary agents. As electroless copper plating progresses, copper ions, hydroxide ions, and reducing agents are consumed, while sodium formate, methyl alcohol, etc. (when formaldehyde is used as the reducing agent) are produced as by-products. Furthermore, when copper ions are added as copper sulfate and hydroxide ions are added as sodium hydroxide, sodium sulfate will accumulate. Therefore, the consumption amount is increased from the cycle system and non-cycle system to lines 13 and 1, respectively.
5, and part or all of the plating liquid (including by-products) is continuously or intermittently removed from the plating bath 12. Note that the term "intermittent" as used herein includes cases in which the information is simply taken out discontinuously without a fixed period. Figure 1 shows the case where a portion of the supply overflows and is continuously taken out depending on the supply amount.
The overflowing tamping liquid 12 is led to the copper precipitation device 21 from the supply port via the line 17 and the filter 19 (which may be omitted). In the copper precipitation device 21, copper ions are precipitated and removed. Separation of copper ions is carried out, for example, by decomposing copper chelate and precipitating copper as metallic copper or copper oxide by one or a combination of two or more of the following methods. (1) Add metallic copper such as copper plate, copper foil, copper powder, etc. to the liquid. (2) Add a catalyst such as Pd 2+ to the liquid. (3) Maintain the liquid at high temperature and high pH. In addition to these precipitation removal methods, copper removal is also carried out by electrolytic removal. For example, an insoluble anode and a cathode are placed in an electroless copper plating solution, and a direct current is applied to deposit copper on the cathode, thereby removing copper ions in the bath. Therefore, the copper precipitation device 21 can include an input member for copper powder, a Pd 2+ alkaline agent, etc. or a heating member, as desired, and can further include a stirring member to quickly carry out the above reaction. . It is also possible to provide an anode and a cathode. The precipitated copper component is appropriately discharged from valve 24. The solution from which the copper ions have been precipitated is led from the outlet to the complexing agent recovery device 27 via the line 23 and the filter 25 (which may be omitted).
Acid can be led to the complexing agent recovery device via line 28, and the complexing agent is precipitated by making the liquid in this device sufficiently acidic for the complexing agent to precipitate. The suitable PH range varies depending on the complexing agent, but for example, in the case of EDTA, the PH range is generally 4.0 or less,
Preferably the pH is 2.0 or less, more preferably PH1.0 or less. General acids are suitable for adjusting the liquid properties. Examples include sulfuric acid and hydrochloric acid. FIG. 2 is a graph showing the relationship between recovery rate and pH when EDTA is used as a complexing agent. liquid
It can be seen that EDTA can be sufficiently recovered by setting the pH to 2.0 or lower, and it is more preferable to set the pH to 1.0 or lower. In addition, in this example, the pH was adjusted with sulfuric acid. In this way, the separation of the complexing agent from the electroless copper plating bath is achieved by decomposing the copper chelating agent and separating the complexing agent by precipitation, but the complexing agent that can be used in this process is EDTA. In addition, there are many known complexing agents for electroless copper plating, such as Lotsiel (sodium potassium tartrate), ethylenediaminetetramine, triethanolamine, and diethanolamine. The precipitated complexing agent passes through line 29 to electrolyzer 3.
1 to the anode chamber 33. At this time, the complexing agent may be washed and further dried if necessary, and the recovered complexing agent may be supplied in a solid state, or it may be dissolved in an alkaline solution in advance and supplied to the electrolytic device 31 in a solution state. It may also be guided to the anode chamber 33. The electrolyzer 31 is partitioned by an ion exchange membrane 37 to form an anode chamber 33 and a cathode chamber 35.
An anode 39 made of copper is disposed in the anode chamber 33, while a cathode 41 is disposed in the cathode chamber 35. As the cathode 41, a material insoluble in the cathode aqueous solution, such as stainless steel or carbon, is preferable. The recovered complexing agent is supplied to the anode chamber 33 in a solid state, liquid state, etc., and the liquid property is maintained at a level in which the complexing agent can be dissolved. For example, in the case of EDTA, the pH is generally 4.0 or higher, preferably PH4.0 or higher.
7.0 or higher. (i) When an alkaline solution is placed in the anode chamber 35, an anion exchange membrane is used as the ion exchange membrane; (ii) When an acidic solution is placed in the cathode chamber 35, a cation exchange membrane is used as the ion exchange membrane. is used. When electrolysis is performed by passing a direct current between the two electrodes, that is, between the anode 39 and the cathode 41, copper is dissolved and copper ions are generated in the anode chamber 33, and these ions are absorbed by the complexing agent supplied via the line 29. and then this copper complex forms line 1
3 is recycled to the electroless plating bath 11. When the liquid in the cathode chamber 35 is alkaline, OH - ions pass through the ion exchange membrane 37 (anion exchange membrane) and reach the anode chamber 33 as a result of electrolysis, and as a result, exhausted copper ions are removed from the line 13. (as a complex compound) and hydroxide ions are fed into the plating bath 11. This case is convenient in that hydroxide ions necessary for electroless plating are supplied together with copper ions. If the liquid in the cathode chamber 35 is acidic, the
OH - ions are not supplied and must be supplied separately, but this can be supplied as NaOH etc. Thus, copper ions (as a complex compound) or even OH - ions are supplied via line 13, and reducing agents etc. are supplied via line 15 or 15'. Above, separation of copper ions,
Although the case has been described in which the recovery of the complexing agent and the elution of copper ions by electrolysis are performed in separate tanks, it is also possible to perform each of the above operations in one tank. FIG. 3 is a graph showing the relationship between current density and anode dissolution efficiency. This was done using the electrolyzer shown in Figure 1, with 0.08 mol of EDTA/4Na in the anode chamber.
Put 0.1 mol of NaOH into the cathode chamber, and use a 0.5 dm 2 copper plate as the anode and a 0.5 dm 2 18− as the cathode.
8 stainless steel was used and the liquid temperature was 50°C. Similarly, FIG. 4 is a graph showing the relationship between the concentration ratio R of copper ions and EDTA (R=[EDTA]/[Cu 2+ ]) and the anode dissolution efficiency. The same procedure as in FIG. 4 was carried out except that the EDTA concentration was changed. The higher the concentration of EDTA, which is a copper complexing agent,
The complexing agent is dissolved with high current efficiency, and therefore, by keeping the complexing agent at a predetermined concentration or higher, it is possible to efficiently dissolve and replenish the complexing agent. FIG. 5 is a graph showing the relationship between the liquid temperature in the anode chamber and the anode dissolution efficiency. This has the same bipolar chamber composition as in Figure 2, current value 2A, current flow amount 3600 clones,
Anode current density 3A/dm 2 , cathode current density 4A/dm 2
I did it at It can be seen that the higher the liquid temperature in the anode chamber, the more efficient the current is in dissolving copper. For example, in electroless plating, such as printed wiring boards, which requires high plating speed and strict physical properties of the plating film, it is ideal to use the plating bath at as high a temperature as possible, making it even more effective. It is. As explained above, according to the present invention, at least a portion of the electroless plating solution is taken out, a complexing agent is recovered from it, and the consumed copper is supplied as a copper complex compound using the complexing agent. By doing so, the accumulation of by-products such as sodium sulfate, sodium formate, or alcohol in the electroless copper plating bath becomes extremely small, and in the extreme, the accumulation of sodium sulfate becomes zero, and the electrolytic bath becomes large. This makes it possible to extend the service life and perform stable high-quality electroless plating. In addition, conventionally, plating waste liquid
Countermeasures against COD and BOD have been a major problem in terms of pollution, but by extending the lifespan of plating baths, there is no need to dispose of baths, and expensive complexing agents such as EDTA can be recovered and used effectively. can. Experimental Example Using a bath composition (bath volume 5) of EDTA・4Na 30g/CuSO 4・5H 2 O 6g/paraformaldehyde 7g/PH (adjusted with NaOH) of 11.8 and a temperature of 50°C, a glass epoxy copper-clad laminate was Electrolytic plating was applied.
At this time, sodium sulfate was added to the bath as shown in Table 1, and its influence was investigated.

【表】 実施例 1 ガラスエポキシ銅張積層板をリン酸三ソーダ40
g/で脱脂し、過硫酸アンモニウム100g/
でエツチングし、パラジウム、スズのコロイド溶
液ついで硫酸50g/で活性化した後、本法およ
び従来法で無電解銅めつきを行なつた。 浴組成 硫酸銅 10g/ EDTA 50g/ ホルムアルデヒド 10g/ 水酸化ナトリウム PH12に調整 浴 温 50℃ 1dm2/の負荷で12日間めつきを行なつた。
従来法では銅イオンおよび水酸化イオンの補給を
硫酸銅および水酸化ナトリウムを追加することに
より行なつたので、硫酸ナトリウムの濃度が上昇
した。本法では第1図に示した装置めつき浴を前
記浴組成とし、電解装置の陰極室にNaOH0.1
g/を入れ、陽極として銅板を陰極としてステ
ンレス板を用い、陰極電流密度2.5A/dm2、陰
極電流密度4A/dm2で通電し、また、陽極室に
回収EDTAを補給して行なつたが硫酸ナトリウ
ムの濃度の増加はみられなかつた。 EDTAの回収は、めつき浴の一部を取り出し、
PHを14として銅箔を加えて銅イオンを沈殿除去
し、ついで液にH2SO4を加えてPH2.0として定
量的にEDTAを析出せしめ、過することによ
り行なつた。 この結果を以下に示す。
[Table] Example 1 Glass epoxy copper clad laminate coated with trisodium phosphate 40
Degrease with 100g/g/ of ammonium persulfate.
After etching with a colloidal solution of palladium and tin and activation with 50 g of sulfuric acid, electroless copper plating was performed using the present method and the conventional method. Bath composition Copper sulfate 10g/EDTA 50g/Formaldehyde 10g/Sodium hydroxide Adjusted to pH 12 Bath temperature 50°C Plating was carried out for 12 days at a load of 1dm 2 /.
In the conventional method, copper ions and hydroxide ions were supplemented by adding copper sulfate and sodium hydroxide, resulting in an increase in the concentration of sodium sulfate. In this method, the apparatus plating bath shown in Fig. 1 has the above bath composition, and the cathode chamber of the electrolyzer is filled with NaOH0.1.
A copper plate was used as an anode and a stainless steel plate was used as a cathode, and electricity was applied at a cathode current density of 2.5 A/dm 2 and a cathode current density of 4 A/dm 2 , and recovered EDTA was replenished into the anode chamber. However, no increase in the concentration of sodium sulfate was observed. To recover EDTA, take out a part of the plating bath and
The pH was adjusted to 14, copper foil was added to precipitate and remove copper ions, and then H 2 SO 4 was added to the solution to adjust the pH to 2.0 to quantitatively precipitate EDTA, followed by filtration. The results are shown below.

【表】【table】

【表】【table】

【表】【table】

【表】【table】

【表】【table】

【表】【table】 【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明について示すフロー図である。
第2図はEDTAの回収率を示すグラフである。
第3図は電流密度とアノード溶解効率との関係を
示すグラフである。第4図は銅イオンとEDTA
との濃度比Rと、アノード溶解効率との関係を示
すグラフである。第5図は液温とアノード効率と
の関係を示すグラフである。 11……無電解めつき浴、21……銅沈殿装
置、27……錯化剤回収装置、31……電解装
置、37……イオン交換膜、39……陽極、41
……陰極。
FIG. 1 is a flow diagram illustrating the present invention.
FIG. 2 is a graph showing the recovery rate of EDTA.
FIG. 3 is a graph showing the relationship between current density and anode dissolution efficiency. Figure 4 shows copper ions and EDTA
It is a graph showing the relationship between the concentration ratio R and the anode dissolution efficiency. FIG. 5 is a graph showing the relationship between liquid temperature and anode efficiency. 11... Electroless plating bath, 21... Copper precipitation device, 27... Complexing agent recovery device, 31... Electrolyzer, 37... Ion exchange membrane, 39... Anode, 41
……cathode.

Claims (1)

【特許請求の範囲】 1 (イ) 錯化剤を含む無電解銅めつき浴から無電
解めつき液の一部もしくは全部を連続的または
間欠的に取り出して、該液中の銅イオンを該液
から分離除去し、 (ロ) この液を酸性にして錯化剤を析出せしめて回
収し、 (ハ) イオン交換膜により仕切つて、銅を陽極とす
る陽極室および陰極を配設した陰極室を設け、
該陰極室にはアルカリ性溶液(前記イオン交換
膜がアニオン交換膜の場合)または酸性溶液
(前記イオン交換膜がカチオン交換膜の場合)
を入れ、一方、陽極室には前記回収錯化剤を導
入し、前記両極間に直流電流を通電し、 (ニ) ついで、前記陽極室内の溶液を前記無電解め
つき浴にリサイクルする ことを特徴とする無電解めつき浴の再生方法。 2 (a) 無電解銅めつき液中の銅キレートを分解
し、銅成分を沈殿させる銅沈殿装置。 (b) 溶液の液性を変化させ錯化剤を沈殿、回収す
る錯化剤回収装置、および (c) イオン交換膜で仕切られて陽極室および陰極
室が形成され、該陽極室には銅からなる陽極が
配設され、該陰極室内には陰極が配設された電
解装置 を有することを特徴とする無電解めつき浴の再生
装置。
[Claims] 1 (a) Part or all of the electroless plating solution is continuously or intermittently taken out from an electroless copper plating bath containing a complexing agent to remove copper ions from the solution. (b) acidify this liquid to precipitate the complexing agent and recover it; (c) divide it by an ion exchange membrane into an anode chamber with a copper anode and a cathode chamber with a cathode. established,
The cathode chamber contains an alkaline solution (if the ion exchange membrane is an anion exchange membrane) or an acidic solution (if the ion exchange membrane is a cation exchange membrane).
On the other hand, the recovered complexing agent is introduced into the anode chamber, and a direct current is passed between the two electrodes, and (d) the solution in the anode chamber is recycled to the electroless plating bath. Characteristic method for regenerating electroless plating baths. 2 (a) A copper precipitation device that decomposes the copper chelate in the electroless copper plating solution and precipitates the copper component. (b) a complexing agent recovery device that precipitates and recovers the complexing agent by changing the liquid properties of the solution; and (c) an anode chamber and a cathode chamber separated by an ion exchange membrane, the anode chamber containing copper. 1. A regeneration device for an electroless plating bath, comprising an electrolytic device in which an anode is disposed, and a cathode is disposed in the cathode chamber.
JP57039869A 1982-03-13 1982-03-13 Method and apparatus for regenerating electroless plating bath Granted JPS58157959A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP57039869A JPS58157959A (en) 1982-03-13 1982-03-13 Method and apparatus for regenerating electroless plating bath
US06/372,133 US4425205A (en) 1982-03-13 1982-04-27 Process for regenerating electroless plating bath and a regenerating apparatus of electroless plating bath
DE8282400798T DE3272286D1 (en) 1982-03-13 1982-04-30 A process for regenerating electroless plating bath and a regenerating apparatus of electroless plating bath
EP82400798A EP0088852B1 (en) 1982-03-13 1982-04-30 A process for regenerating electroless plating bath and a regenerating apparatus of electroless plating bath
KR8201949A KR870001547B1 (en) 1982-03-13 1982-05-04 Process for regenerating electroless plating bath and a regenerating apparatus of electroless plating bath
GB08212818A GB2117003B (en) 1982-03-13 1982-05-04 Apparatus and process for electroless plating bath regeneration
CA000418017A CA1220759A (en) 1982-03-13 1982-12-17 Regeneration of plating bath by acidification and treatment of recovered chelating agent in membrane cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57039869A JPS58157959A (en) 1982-03-13 1982-03-13 Method and apparatus for regenerating electroless plating bath

Publications (2)

Publication Number Publication Date
JPS58157959A JPS58157959A (en) 1983-09-20
JPS639020B2 true JPS639020B2 (en) 1988-02-25

Family

ID=12564974

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Application Number Title Priority Date Filing Date
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Country Status (2)

Country Link
JP (1) JPS58157959A (en)
KR (1) KR870001547B1 (en)

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US8177956B2 (en) * 2008-03-12 2012-05-15 Micyus Nicole J Method of electrolytically dissolving nickel into electroless nickel plating solutions

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Publication number Priority date Publication date Assignee Title
CH573126A5 (en) * 1974-06-07 1976-02-27 Bbc Brown Boveri & Cie
JPS5223530A (en) * 1975-08-17 1977-02-22 Inoue Japax Res Treating method of chemical copper plating solution
JPS565965A (en) * 1979-06-27 1981-01-22 Hitachi Ltd Treatment of chemical copper plating waste liquor

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KR870001547B1 (en) 1987-09-02
KR830010223A (en) 1983-12-26
JPS58157959A (en) 1983-09-20

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