JPS639721B2 - - Google Patents
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- Publication number
- JPS639721B2 JPS639721B2 JP56156650A JP15665081A JPS639721B2 JP S639721 B2 JPS639721 B2 JP S639721B2 JP 56156650 A JP56156650 A JP 56156650A JP 15665081 A JP15665081 A JP 15665081A JP S639721 B2 JPS639721 B2 JP S639721B2
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- JP
- Japan
- Prior art keywords
- thin film
- humidity sensor
- humidity
- conductivity
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
本発明は湿度を検知する湿度センサーに関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a humidity sensor that detects humidity.
現在、空気中の湿度を測定する湿度計としては
人間の毛髪や馬の尾の毛を用いたものが存在する
が、装置が大がかりである事は免れず、小型化は
困難であつた。一方、ソリツドステート化を図つ
たものとしてセラミツクスを用いたものが提案さ
れ、一部実用化されつつあるが、応答速度の点で
問題があり、普及には今一歩である。 Currently, there are hygrometers that use human hair or horse tail hair to measure the humidity in the air, but these devices are large-scale and difficult to miniaturize. On the other hand, devices using ceramics have been proposed in an attempt to achieve a solid-state structure, and some are being put into practical use, but there are problems with response speed, and it is still a step away from widespread use.
本発明はこのような点に鑑みて為されたもので
あつて、以下に図面を参照しつつ詳述する。 The present invention has been made in view of these points, and will be described in detail below with reference to the drawings.
第1図は本発明湿度センサーの概念を示す断面
図、第2図はその上面図であつて、これ等の図に
於て、1はガラス基板、2,2は該ガラス基板1
の表面に微小間〓3を設けて対向した対向電極で
あつて、金を00〜400Åの厚みで蒸着する事に依
つて形成される。尚、上記微小間〓3は0.1〜2
mmの範囲に設定される。4はこの対向電極2,2
の微小間〓3に跨つて形成されたWO3薄膜で、
抵抗加熱による真空蒸着法を用いて6000〜9500Å
の厚みに被着されている。 FIG. 1 is a cross-sectional view showing the concept of the humidity sensor of the present invention, and FIG. 2 is a top view thereof. In these figures, 1 is a glass substrate, and 2 and 2 are glass substrates 1
The counter electrodes are formed by depositing gold to a thickness of 00 to 400 Å. In addition, the above micro space = 3 is 0.1 to 2
Set to a range of mm. 4 is this counter electrode 2,2
The WO 3 thin film was formed across a microscopic space of 3.
6000-9500Å using vacuum evaporation method with resistance heating
It is coated to a thickness of .
斯る構成のセンサーに対して第1図に示す如
く、両対向電極2,2間に定電圧源5を接続して
WO3薄膜4に定電圧を印加すると、このWO3薄
膜4は次第に青色に着色されて行き、その青色化
の進行に伴つて通電量が増加し、青色化が完了し
た時点でその電流量も飽和状態に達する。 For a sensor with such a configuration, a constant voltage source 5 is connected between both opposing electrodes 2, 2, as shown in FIG.
When a constant voltage is applied to the WO 3 thin film 4, the WO 3 thin film 4 is gradually colored blue, and as the blue coloring progresses, the amount of current applied increases, and when the blue coloring is completed, the amount of current also decreases. Saturation is reached.
このWO3薄膜4の青色化現象、並びに電流量
の変化に就いては、S.K.DebがPhilosophical
Magazine、27、801(1973)に於て発表してい
る。 Regarding the bluing phenomenon of this WO 3 thin film 4 and the change in the amount of current, SKDeb is a Philosophical
Magazine, 27, 801 (1973).
この飽和状態に達したセンサーの雰囲気湿度を
変化させると、その電流量が変化し、その電流量
を電流計6で読み取る事に依つてその時の雰囲気
湿度を知る事が出来る。 When the atmospheric humidity of the sensor that has reached this saturation state is changed, the amount of current changes, and by reading the amount of current with the ammeter 6, the atmospheric humidity at that time can be determined.
斯る現象に就いて本発明者等は次のように考案
している。即ち、蒸着に依るWO3薄膜は表面が
α−WO3で表わされるアモルフアス(非晶質)
材料に依つて構成されているので、空気中の湿度
を吸着し易い状態にある。そしてWO3薄膜表面
に吸着する水の量は湿度に依存する。 The present inventors have devised the following idea regarding such a phenomenon. That is, the WO 3 thin film formed by vapor deposition has an amorphous surface represented by α-WO 3 .
Since it is made of materials, it is in a state where it easily absorbs humidity in the air. And the amount of water adsorbed on the surface of the WO 3 thin film depends on the humidity.
一方、α−WO3中へは電気化学的に電界を掛
ける事に依つてプロトン(H+)と電子を導入す
る事が出来、α−WO3とは結晶構造の異るα−
HxWO3(タングステンブロンズ構造)に変化す
る。即ちプロトンと電子の対が水素原子と見なさ
れている。この時のXは、H原子の量に対応し、
またこのxはその時の電流量と時間、即ち電荷量
で定まり、xの最大値はH原子の最大溶解量に当
つている。H原子がα−WO3の格子或いは粒界
に導入されると青色の着色中心となり、xの値が
大きい程、濃い青色を示す。これがα−WO3薄
膜に依るエレクトロクロミズム現象と呼ばれてい
るものである。 On the other hand, protons (H + ) and electrons can be introduced into α-WO 3 by applying an electrochemical electric field, and α-WO 3 has a different crystal structure from α-WO 3.
Changes to HxWO 3 (tungsten bronze structure). In other words, a pair of proton and electron is considered to be a hydrogen atom. At this time, X corresponds to the amount of H atoms,
Further, this x is determined by the amount of current and time, that is, the amount of charge, and the maximum value of x corresponds to the maximum amount of H atoms dissolved. When H atoms are introduced into the lattice or grain boundaries of α-WO 3 , they become blue colored centers, and the larger the value of x, the darker the blue color appears. This is called the electrochromism phenomenon caused by the α-WO 3 thin film.
一方、H原子の導入は前述の如くプロトンと電
子との導入であり、α−HxWO3中ではプロトン
も電子も伝導し、α−HxWO3を電子イオン混合
超イオン導電体として考える事が出来る。プロト
ンの伝導率より電子の伝導率が大きく、α−
HxWO3の電気伝導は電子伝導率に依つて与えら
れ、その値はドナー原子として働いているH原子
の量、xに依存する。この事はα−HxWO3に於
ては青色量、即ちH原子の量、xに依つて電子伝
導度が変化する。 On the other hand, the introduction of H atoms is the introduction of protons and electrons as described above, and both protons and electrons are conducted in α-HxWO 3 , and α-HxWO 3 can be considered as an electron-ion mixed superionic conductor. Electron conductivity is greater than proton conductivity, α−
The electrical conductivity of HxWO 3 is given by the electronic conductivity, and its value depends on the amount of H atoms acting as donor atoms, x. This means that in α-HxWO 3 , the electronic conductivity changes depending on the amount of blue color, that is, the amount of H atoms, and x.
従つてWO3薄膜の湿度センサーとしての利用
は、着色が終了してから、即ちWO3薄膜を流れ
る電流が飽和状態に達した後に、α−HxWO3中
での電子伝導及び水素原子の化学ポテンシヤルの
利用であり、これ等がWO3薄膜表面の吸着水の
量、即ち湿度に対応する。 Therefore, the use of a WO 3 thin film as a humidity sensor requires that the electron conduction in α-HxWO 3 and the chemical potential of hydrogen atoms be determined after the coloring is completed, that is, after the current flowing through the WO 3 thin film reaches a saturation state. This corresponds to the amount of water adsorbed on the surface of the WO 3 thin film, that is, the humidity.
次に本発明の具体例を説明する。対向電極2,
2として300Å厚の金を電極間隔30.1mmで配置
し、両電極2,2に跨つて7600Åの厚みのWO3
薄膜4を長さ10mm、巾5mmで形成したものを試料
とした。 Next, specific examples of the present invention will be explained. Counter electrode 2,
2, 300 Å thick gold is placed with an electrode spacing of 30.1 mm, and 7600 Å thick WO 3 is placed across both electrodes 2, 2.
A thin film 4 formed with a length of 10 mm and a width of 5 mm was used as a sample.
この試料に30Vの直流定電圧5を印加した時の
電流計6での測定結果を第3図に示す。この図か
ら明らかな如く、定電圧5印加直後は10-7A程度
であつたものが時間の経過と共に増加し、7〜8
分後には1.6〜1.7×10-3A程度に達し、その状態
で飽和している。尚、この時上述した如くWO3
薄膜4は青色化が進行し、次第にその青色を増し
て行くが、電流が飽和するとその青色化現象も飽
和し、青色化は進行しない。参考までにこの時の
雰囲気温度は28℃、湿度は約57%であつた。 FIG. 3 shows the measurement results with an ammeter 6 when a constant DC voltage 5 of 30 V was applied to this sample. As is clear from this figure, the voltage was about 10 -7 A immediately after applying a constant voltage of 5, but it increased as time passed, and the voltage increased to 7 to 8 A.
After a minute, it reaches about 1.6 to 1.7×10 -3 A, and is saturated in that state. At this time, as mentioned above, WO 3
The thin film 4 becomes blue and gradually increases in blue color, but when the current saturates, the blue color phenomenon also becomes saturated and the blue color does not progress. For reference, the atmospheric temperature at this time was 28°C and the humidity was approximately 57%.
次にこのように電流が飽和状態にある試料をシ
リカゲルが挿入されているデシケータ内に投入す
ると第4図の実線で示す如く、電流が減少しはじ
め、約10分後には約1.6mAであつたものが約1.0
mAに減少する。10分経過後に試料をデシケータ
から取り出し、約57%の雰囲気中に戻すと2〜3
分後には多少のオーバーシユートが見られるもの
の、デシケータ投入前の1.6mA程度の状態に戻
る。またこの第4図の破線で示されたものは、先
の条件よりデシケータ内に約3倍のシリカゲルが
入れられていた時の電流変化であり、先の場合よ
り急激に電流が減少している。この場合でも試料
をデシケータから取り出すと元の状態に復帰して
いる。 Next, when the sample with the current saturated in this way was placed in a desiccator with silica gel inserted, the current began to decrease, as shown by the solid line in Figure 4, and after about 10 minutes it was about 1.6 mA. About 1.0
mA. After 10 minutes, the sample was taken out of the desiccator and returned to an atmosphere of about 57%.
Although some overshoot is seen after a few minutes, it returns to the state of about 1.6 mA before inputting the desiccator. Also, what is shown by the broken line in Figure 4 is the current change when approximately three times as much silica gel was placed in the desiccator as compared to the previous conditions, and the current decreased more rapidly than in the previous case. . Even in this case, when the sample is removed from the desiccator, it returns to its original state.
一方、試料を高湿度雰囲気に投入した場合を示
したのが第5図で、水を充分に含ませた綿の入つ
たシヤーレが内挿されたデシケータに上述の場合
と同様に電流が飽和した状態の試料を投入する
と、その電流が増加し始め、投入後約10分で2.4
mA程度にまで増え、その時点で試料をデシケー
タから取り出すと電流は多少のアンダーシユート
を経て元の状態に戻る。 On the other hand, Figure 5 shows the case where the sample was placed in a high humidity atmosphere, and the current was saturated in the same way as in the case described above in a desiccator in which a shear cloth containing cotton sufficiently soaked with water was inserted. When the current sample is put in, its current starts to increase and reaches 2.4 in about 10 minutes after being put in.
The current increases to about mA, and when the sample is removed from the desiccator at that point, the current returns to its original state after undergoing some undershoot.
このように試料に流れる電流が湿度に依存して
おり、湿度とWO3薄膜4の見かけ上の伝導率と
の関係は28℃に於て第6図に示すように略比例関
係にある。尚、ここで云う見かけ上の伝導率と
は、
電流/電位差×WO3薄膜の長さ/WO3薄膜の断面
積
で表わされる。 In this way, the current flowing through the sample depends on the humidity, and the relationship between the humidity and the apparent conductivity of the WO 3 thin film 4 is approximately proportional as shown in FIG. 6 at 28°C. Incidentally, the apparent conductivity referred to here is expressed as: current/potential difference x length of WO 3 thin film/cross-sectional area of WO 3 thin film.
従つてこの見かけ上の伝導度から湿度を検出す
る事が可能であり、ソリツドステート化された湿
度センサーとする事が出来る。 Therefore, humidity can be detected from this apparent conductivity, and a solid-state humidity sensor can be used.
最後に本発明に係る湿度センサーの応答速度を
毛髪湿度計のそれと比較した曲線図を第7図に示
す。この図は湿度が98%から52%へ減少した場合
と、27%から52%へ増加した場合とが示されてお
り、何れも実線が本発明湿度センサーでの測定値
であり、破線が毛髪湿度計の指示値である。本発
明湿度センサーは湿度の減少の場合も増加の場合
も約2分後には正確な湿度を検出出来ているのに
対し、毛髪湿度計の場合はそれより数倍、もしく
はそれ以上の時間を要している事が明らかであ
る。 Finally, FIG. 7 shows a curve diagram comparing the response speed of the humidity sensor according to the present invention with that of a hair hygrometer. This figure shows the case where the humidity decreased from 98% to 52% and the case where it increased from 27% to 52%. In both cases, the solid line is the measured value with the humidity sensor of the present invention, and the broken line is the hair. This is the reading of the hygrometer. The humidity sensor of the present invention can accurately detect humidity after about 2 minutes, whether the humidity is decreasing or increasing, whereas a hair hygrometer takes several times or more time. It is clear that you are doing so.
尚、本発明の以下の説明に於ては、WO3薄膜
4の伝導率は対向電極2,2間を流れるから電流
から算出したが、第8図に示す如く、対向電極
2,2以外にWO3薄膜4に検出電極7,7に設
けてこの検出は電極7,7に依つてWO3薄膜4
の伝導率を検出しても良い。このような構成の場
合、対向電極2,2とWO3薄膜4との界面近傍
の不安定要素が無視し得て安定状態にあるWO3
薄膜4の純粋の伝導率の検出が可能であり、より
高い精度の湿度センサーとする事が出来る。 In the following explanation of the present invention, the conductivity of the WO 3 thin film 4 is calculated from the current flowing between the opposing electrodes 2, 2, but as shown in FIG. The detection electrodes 7, 7 are provided on the WO 3 thin film 4, and this detection depends on the electrodes 7, 7.
The conductivity may also be detected. In such a configuration, unstable factors near the interface between the counter electrodes 2, 2 and the WO 3 thin film 4 can be ignored, and the WO 3 is in a stable state.
It is possible to detect the pure conductivity of the thin film 4, and a humidity sensor with higher accuracy can be obtained.
本発明は以上の説明から明らかな如く、WO3
薄膜4に流れる電流が飽和した状態に於て、その
時のWO3薄膜の示す抵抗値にから湿度を検出す
る構成であるので、湿度計のソリツドステート化
が図れ、湿度計の信頼性や耐振特性が向上し、ま
た小型化が可能となり、空調装置のセンサーや調
理器等のセンサーにも用いる事が出来る。またそ
の応答速度も毛髪湿度計やセラミツク型のものに
比し格段に速く、応用範囲の広い湿度センサーと
する事が出来る。 As is clear from the above description, the present invention is based on WO 3
Since the configuration detects humidity based on the resistance value of the WO 3 thin film when the current flowing through the thin film 4 is saturated, the hygrometer can be made into a solid state, improving the reliability and vibration resistance of the hygrometer. It has improved characteristics and can be made smaller, so it can be used in sensors for air conditioners, cookers, etc. In addition, its response speed is much faster than that of hair hygrometers or ceramic type ones, and it can be used as a humidity sensor with a wide range of applications.
第1図は本発明湿度センサーの断面図、第2図
はその上面図、第3図はWO3薄膜を流れる電流
の状態を示した曲線図、第4図、第5図は夫々湿
度変化にともなう電流量の変化を示した曲線図、
第6図は湿度と見かけ上の伝導率との関係曲線
図、第7図は湿度計の応答速度を示す曲線図、第
8図は本発明湿度センサーの他の実施例を示す上
面図であつて、2は対向電極、4はWO3薄膜、
を夫々示している。
Fig. 1 is a cross-sectional view of the humidity sensor of the present invention, Fig. 2 is a top view thereof, Fig. 3 is a curve diagram showing the state of current flowing through the WO 3 thin film, and Figs. 4 and 5 are respectively shown as a result of changes in humidity. A curve diagram showing the accompanying change in the amount of current,
FIG. 6 is a curve diagram showing the relationship between humidity and apparent conductivity, FIG. 7 is a curve diagram showing the response speed of the hygrometer, and FIG. 8 is a top view showing another embodiment of the humidity sensor of the present invention. 2 is a counter electrode, 4 is a WO 3 thin film,
are shown respectively.
Claims (1)
る対向電極を設け、その電極間〓に跨つてWO3
薄膜を被着して成り、上記対向電極間に定電圧を
印加してその時流れる電流が飽和した状態に於
て、その時のWO3薄膜の伝導率からWO3薄膜が
曝されている湿度を検出する事を特徴とした湿度
センサー。 2 上記絶縁基板はガラス基板である事を特徴と
した特許請求の範囲第1項記載の湿度センサー。 3 上記WO3薄膜はアモルフアス材料である事
を特徴とした特許請求の範囲第1項、又は第2項
記載の湿度センサー。 4 上記WO3薄膜の伝導率は、上記対向電極間
に流れる電流から算出される事を特徴とした特許
請求の範囲第1項、第2項、又は第3項記載の湿
度センサー。 5 上記WO3薄膜の伝導率は、上記対向電極と
は別にWO3薄膜に設けた検出電極に依つて検出
される事を特徴とした特許請求の範囲第1項、第
2項、又は第3項記載の湿度センサー。 6 上記対向電極は、膜厚300〜400Åの金電極で
ある事を特徴とした特許請求の範囲第1項、第2
項、第3項、第4項、又は第5項記載の湿度セン
サー。 7 上記対向電極の微小間〓は、0.1〜2.0mmの範
囲である事を特徴とした特許請求の範囲第1項、
第2項、第3項、第4項、第5項、又は第6項記
載の湿度センサー。 8 上記WO3薄膜は6000〜9500Åの厚みを有す
る事を特徴とした特許請求の範囲第1項、第2
項、第3項、第4項、第5項、第6項、又は第7
項記載の湿度センサー。[Claims] 1. Opposing electrodes are provided on the surface of an insulating substrate and are opposed to each other with a minute gap between them, and WO 3 is applied across the gap between the electrodes.
When a constant voltage is applied between the opposing electrodes and the current flowing at that time is saturated, the humidity to which the WO 3 thin film is exposed is detected from the conductivity of the WO 3 thin film at that time. A humidity sensor that is characterized by 2. The humidity sensor according to claim 1, wherein the insulating substrate is a glass substrate. 3. The humidity sensor according to claim 1 or 2, wherein the WO 3 thin film is an amorphous material. 4. The humidity sensor according to claim 1, 2, or 3, wherein the conductivity of the WO 3 thin film is calculated from the current flowing between the opposing electrodes. 5. Claims 1, 2, or 3, wherein the conductivity of the WO 3 thin film is detected by a detection electrode provided on the WO 3 thin film separately from the counter electrode. Humidity sensor as described in section. 6 Claims 1 and 2, characterized in that the counter electrode is a gold electrode with a film thickness of 300 to 400 Å.
3. The humidity sensor according to item 3, item 4, or item 5. 7. Claim 1, characterized in that the minute distance between the opposing electrodes is in the range of 0.1 to 2.0 mm;
The humidity sensor according to item 2, 3, 4, 5, or 6. 8 Claims 1 and 2, characterized in that the WO 3 thin film has a thickness of 6000 to 9500 Å.
Paragraph 3, Paragraph 4, Paragraph 5, Paragraph 6, or Paragraph 7
Humidity sensor as described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156650A JPS5857702A (en) | 1981-09-30 | 1981-09-30 | Moisture sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156650A JPS5857702A (en) | 1981-09-30 | 1981-09-30 | Moisture sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5857702A JPS5857702A (en) | 1983-04-06 |
| JPS639721B2 true JPS639721B2 (en) | 1988-03-01 |
Family
ID=15632287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56156650A Granted JPS5857702A (en) | 1981-09-30 | 1981-09-30 | Moisture sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5857702A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211348A (en) * | 1984-04-06 | 1985-10-23 | Matsushita Electric Ind Co Ltd | Gaseous hydrogen sensor |
| JPS60211347A (en) * | 1984-04-06 | 1985-10-23 | Matsushita Electric Ind Co Ltd | Gaseous hydrogen sensor |
-
1981
- 1981-09-30 JP JP56156650A patent/JPS5857702A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5857702A (en) | 1983-04-06 |
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