JPS6411562B2 - - Google Patents
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- Publication number
- JPS6411562B2 JPS6411562B2 JP53100602A JP10060278A JPS6411562B2 JP S6411562 B2 JPS6411562 B2 JP S6411562B2 JP 53100602 A JP53100602 A JP 53100602A JP 10060278 A JP10060278 A JP 10060278A JP S6411562 B2 JPS6411562 B2 JP S6411562B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- protective layer
- boron
- layer
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 30
- 239000011241 protective layer Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000001947 vapour-phase growth Methods 0.000 description 10
- 150000001639 boron compounds Chemical class 0.000 description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 125000001475 halogen functional group Chemical group 0.000 description 4
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Conductive Materials (AREA)
- Electronic Switches (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
本発明は、熱ヘツドの保護用層、半導体光検出
ヘツドの保護用層、容量素子の誘電体層、抵抗素
子の抵抗体層などに適用し得る新規な非晶質燐・
硼素化合物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a novel amorphous material that can be applied to a protective layer of a thermal head, a protective layer of a semiconductor optical detection head, a dielectric layer of a capacitive element, a resistive layer of a resistive element, etc. phosphorus·
Regarding boron compounds.
熱ヘツドとして、第１図に示すように、絶縁性
基体１上に、発熱用抵抗体層２が形成され、一
方、この発熱用抵抗体層２に一対の電極３及び４
がオーミツクに付され、また、発熱用抵抗体層２
上に電極３及び４上に延長している保護用層５が
配され、そして、発熱用抵抗体層２に、電極３及
び４を介して通電させることにより、その発熱用
抵抗体層２を電極３及び４間の領域において発熱
させ、その熱を、保護用層５を介して、それに相
対的に摺接する感熱紙６に与える構成を有するも
のが提案されている。 As a thermal head, as shown in FIG. 1, a heat generating resistor layer 2 is formed on an insulating substrate 1, and a pair of electrodes 3 and 4 are formed on this heat generating resistor layer 2.
is attached to the ohmic, and the heating resistor layer 2
A protective layer 5 extending over the electrodes 3 and 4 is disposed on top, and by supplying current to the heat generating resistor layer 2 through the electrodes 3 and 4, the heat generating resistor layer 2 is heated. A structure has been proposed in which heat is generated in the area between the electrodes 3 and 4, and the heat is applied to the thermal paper 6 that is in relative sliding contact with the protective layer 5.
また、半導体光検出ヘツドとして、第２図に示
すような、主面上に、窓１１を有する絶縁層１２
を形成し且つ、例えばＰ型を有する半導体基板１
３内に、その主面側から、窓１１の位置におい
て、Ｎ型の半導体領域１４が形成され、一方、基
板１３の主面側及び半導体領域１４の側部にそれ
ぞれ電極１５及び１６がオーミツクに付され、ま
た、基板１３上に、領域１４及び電極１６を覆つ
て、保護用層１７が配され、そして、文字、図形
記号などの情報が記録されている透光性記録紙１
８とが、保護用層１７と相対的に摺接されている
状態で、光１９を、透光性記録紙１８及び保護用
層１７を介して、半導体領域１４に入射させるこ
とにより、電極１５及び１６を介して、記録紙１
８に記録された情報に応じた電気的信号が導出さ
れる構成を有するものが提案されている。 Further, as a semiconductor photodetection head, an insulating layer 12 having a window 11 on the main surface as shown in FIG.
and has, for example, a P-type semiconductor substrate 1
3, an N-type semiconductor region 14 is formed at the position of the window 11 from the main surface side of the substrate 13, while electrodes 15 and 16 are ohmicly formed on the main surface side of the substrate 13 and the sides of the semiconductor region 14, respectively. A protective layer 17 is disposed on the substrate 13, covering the area 14 and the electrodes 16, and a transparent recording paper 1 on which information such as characters and graphic symbols is recorded.
By making the light 19 incident on the semiconductor region 14 through the transparent recording paper 18 and the protective layer 17, the electrode 15 is in sliding contact with the protective layer 17. and 16, recording paper 1
A configuration has been proposed in which an electrical signal is derived in accordance with information recorded in 8.
さらに、容量素子として、第３図に示すよう
な、絶縁基板２１上に、導電性層２２、誘電体層
２３及び導電性層２４がそれらの順に形成され、
そして、導電性層２２及び２４間で、誘電体層２
３の誘電率、厚さなどに応じた値の容量を得る構
成を有するものが提案されている。 Further, as a capacitive element, a conductive layer 22, a dielectric layer 23, and a conductive layer 24 are formed in this order on an insulating substrate 21 as shown in FIG.
Then, between the conductive layers 22 and 24, the dielectric layer 2
A device having a configuration that obtains a capacitance value depending on the dielectric constant, thickness, etc. of 3 has been proposed.
また、抵抗素子として、第４図に示すような、
絶縁基板３１上に抵抗体層３２が付され、それ
に、基板３１上に延長している一対の電極３３及
び３４がオーミツクに付されている構成を有する
ものが提案されている。 In addition, as a resistance element, as shown in Fig. 4,
A structure has been proposed in which a resistor layer 32 is provided on an insulating substrate 31, and a pair of electrodes 33 and 34 extending above the substrate 31 are ohmicly provided.
ところで、従来、上述した熱ヘツドに於ける保
護用層５、上述した半導体光検出ヘツドに於ける
保護用層１７、上述した容量素子の誘電体層２
３、及び上述した抵抗素子の抵抗体層３２を、
燐・硼素化合物で形成することが提案されてい
る。 By the way, conventionally, the protective layer 5 in the above-mentioned thermal head, the protective layer 17 in the above-mentioned semiconductor photodetection head, and the dielectric layer 2 of the above-mentioned capacitive element have been used.
3, and the resistor layer 32 of the above-mentioned resistor element,
It has been proposed to form it with a phosphorus/boron compound.
その理由は、上述した熱ヘツドについてみた場
合、その保護用層５が、耐熱性、耐候性、耐摩耗
性に優れていることから、発熱用抵抗体層２乃至
電極３及び４を保護する機能を良好に果し、ま
た、上述した半導体光検出ヘツドについてみた場
合、その保護用層１７が、透光性、耐候性、耐摩
耗性に優れていることから、半導体領域１４、絶
縁層１２、電極１６を保護する機能を良好に果
し、さらに、上述した容量素子についてみた場
合、その誘電性層２３が、所要の誘電率を有して
いることから、誘電体層としての機能を良好に果
し、また、上述した抵抗素子についてみた場合、
その抵抗体層３２が、所要の比抵抗を有していて
いることから、抵抗体層としての機能を良好に果
すからである。 The reason for this is that when looking at the thermal head mentioned above, the protective layer 5 has excellent heat resistance, weather resistance, and abrasion resistance. In addition, when looking at the semiconductor photodetection head described above, the protective layer 17 has excellent light transmittance, weather resistance, and abrasion resistance. It performs the function of protecting the electrode 16 well, and furthermore, in the case of the above-mentioned capacitive element, since the dielectric layer 23 has the required dielectric constant, it functions well as a dielectric layer. However, when looking at the above-mentioned resistance element,
This is because the resistor layer 32 has the required specific resistance and therefore functions well as a resistor layer.
しかしながら、従来は、上述した機能を果す
燐・硼素化合物が、立方晶燐化硼素（格子定数ａ
＝4.538Å）、六方晶燐化硼素（格子定数ａ＝
5.984Å、ｃ＝11.850Å）などの2000℃以上の高
い融点を有する結晶形の燐・硼素化合物であるの
を普通としていた。 However, conventionally, the phosphorus-boron compound that performs the above-mentioned functions is cubic boron phosphide (lattice constant a
= 4.538 Å), hexagonal boron phosphide (lattice constant a =
It was usually a crystalline phosphorus-boron compound with a high melting point of over 2000°C, such as 5.984 Å, c = 11.850 Å).
一方、このような結晶形の燐・硼素化合物は、
気相成長法によつて得ることができるとしても、
その気相成長をさせるにつき、1000℃以上のよう
な極めて高い温度を必要としていた。 On the other hand, such crystalline phosphorus/boron compounds are
Even if it can be obtained by vapor phase growth,
To achieve this vapor phase growth, extremely high temperatures of over 1000°C were required.
このため、従来は、上述した機能を果す燐・硼
素化合物を容易に得ることができなかつた。 For this reason, conventionally it has not been possible to easily obtain phosphorus-boron compounds that perform the above-mentioned functions.
このようなことから、本発明者などは、上述し
た機能を果す燐・硼素化合物を、1000℃以下の比
較的低い温度での気相成長法によつて容易に得る
ことができないかということにつき、種々の実験
を行い、且つ上述した結晶形の燐・硼素化合物の
場合に比しより良く果す燐・硼素化合物を得るこ
とができないかということにつき、種々の実験を
行つた結果、上述した機能をより良く果す燐・硼
素化合物が、燐（Ｐ）と、硼素(B)とからなり、
Px−B1-x（ただし、0.0196＜ｘ＜0.167）で表され
る非晶質（無定形）の燐・硼素化合物である場
合、それを、常圧気相成長法（常圧CVD法）、減
圧気相成長法（減圧CVD法）、プラズマ気相成長
法（プラズマCVD法）などの気相成長法によつ
て、1000℃以下の比較的低い温度で、容易に、し
かも、上述した機能をより良く果すものとして得
ることができることを確認した。 For this reason, the present inventors have investigated whether it is possible to easily obtain a phosphorus/boron compound that performs the above-mentioned functions by a vapor phase growth method at a relatively low temperature of 1000°C or less. As a result of various experiments, we have conducted various experiments to find out whether it is possible to obtain a phosphorus/boron compound that performs better than the crystalline phosphorus/boron compound described above. A phosphorus-boron compound that better fulfills this purpose is composed of phosphorus (P) and boron (B),
P _ By using vapor phase growth methods such as , low pressure vapor deposition (low pressure CVD), and plasma vapor deposition (plasma CVD), the above-mentioned functions can be easily achieved at a relatively low temperature of 1000°C or less. We have confirmed that it is possible to achieve better results.
よつて、本発明者などは、燐（Ｐ）と、硼素(B)
とからなり、Px−B1-x（ただし、0.0196＜ｘ＜
0.167）で表される非晶質燐・硼素化合物を、本
発明として提案するに到つた。 Therefore, the present inventors have discovered that phosphorus (P) and boron (B)
and P x −B 1-x (where 0.0196<x<
0.167) was proposed as the present invention.
なお、本発明による非晶質燐・硼素化合物は、
上述した熱ヘツドの保護用層５、半導体光検出ヘ
ツドの保護用層１７、容量素子の誘電体層２３、
抵抗素子の抵抗体層３２のいずれかに適用される
かに応じて、炭素、珪素、チタン及びランタン中
より選ばれた１種または複数種を添加物として添
加しているものとし得る。 Note that the amorphous phosphorus/boron compound according to the present invention is
The protective layer 5 of the thermal head described above, the protective layer 17 of the semiconductor photodetection head, the dielectric layer 23 of the capacitive element,
One or more selected from carbon, silicon, titanium, and lanthanum may be added as an additive depending on which one of the resistor layers 32 of the resistor element is applied.
また、本発明による非晶質燐・硼素化合物は、
原料ガスとして、ジボラン（B2H6）とホスフイ
ン（PH3）とを用いたり、三塩化硼素（BCl3）
と三塩化燐（PCl3）とを用いたりして、400℃〜
950℃の温度での常圧気相成長法（常圧CVD法）、
減圧気相成長法（減圧CVD法）、プラズマ気相成
長法（プラズマCVD法）などの気相成長法によ
つて得ることができる。 Furthermore, the amorphous phosphorus/boron compound according to the present invention is
Diborane (B 2 H 6 ) and phosphine (PH 3 ) are used as raw material gases, or boron trichloride (BCl 3 ) is used.
and phosphorus trichloride (PCl 3 ) at 400℃~
Atmospheric pressure vapor phase growth method (atmospheric pressure CVD method) at a temperature of 950℃,
It can be obtained by a vapor phase growth method such as a low pressure vapor phase growth method (low pressure CVD method) or a plasma vapor phase growth method (plasma CVD method).
いま、その具体例を、簡単のため、第１図で上
述した熱ヘツドの保護用層５に適用される本発明
による非晶質燐・硼素化合物を、ジボラン
（B2H6）とホスフイン（PH3）とを用いた減圧気
相成長法（減圧CVD法）によつて得るものとし
て述べれば、次のとおりである。 Now, for the sake of simplicity, a specific example will be given in which the amorphous phosphorus-boron compound according to the present invention applied to the protective layer 5 of the thermal head described above in FIG . The following can be described as what can be obtained by a low pressure vapor phase growth method (low pressure CVD method) using PH 3 ).
例 １
反応管内に、保護用層５が形成されていない状
態での第１図で上述した熱ヘツドを配し、そし
て、反応管内を、電気ヒータを用いて700℃の温
度に加熱した状態で、且つ反応管内を、その一端
側から排気用ポンプを用いて排気しながら、反応
管内に、その他端側から、水素によつて５容量％
となるように希釈されているジボラン（B2H6）
及び水素によつて５容量％となるように希釈され
ているホスフイン（PH3）を、それぞれ流量制御
弁を介して、それぞれ200c.c.／分及び80c.c.／分の
流量で導入させ、それらジボラン（B2H6）及び
ホスフイン（PH3）を、1.5Torrの圧力下で、20
分間反応させるという減圧気相成長法（減圧
CVD法）によつて、保護用層５が形成されてい
ない状態での第１図で上述した熱ヘツド上に、
2μｍの厚さの層を、熱ヘツドの保護用層５とし
て形成した。Example 1 The thermal head described above in Fig. 1 is placed in a reaction tube without the protective layer 5 formed, and the inside of the reaction tube is heated to a temperature of 700°C using an electric heater. , and while evacuating the inside of the reaction tube from one end using an exhaust pump, 5% by volume of hydrogen was added into the reaction tube from the other end.
Diborane (B 2 H 6 ) diluted as
and phosphine (PH 3 ) diluted to 5% by volume with hydrogen were introduced through flow control valves at flow rates of 200 c.c./min and 80 c.c./min, respectively. , diborane (B 2 H 6 ) and phosphine (PH 3 ) under a pressure of 1.5 Torr for 20
Reduced pressure vapor phase growth method (reduced pressure)
(CVD method) on the thermal head described above in FIG. 1 without the protective layer 5 being formed.
A 2 μm thick layer was applied as the protective layer 5 of the thermal head.
このようにして形成された保護用層５（これを
試料１とする）について、それがどのような組成
物でなるのかどのような化合物でなるのかについ
て、EPMA（エレクトロ・プローブ・マイクロ・
アナライザ）を用い、加速電圧12KV、照射電流
0.1μA、電子線直径10μ、係数時間40秒の条件で、
測定を行つたところ、試料１が、燐（Ｐ）と、硼
素(B)とからなり、PxB1-x（ただし、ｘ＝0.1666）
で表される化合物である、という結果が得られ
た。 Regarding the protective layer 5 formed in this way (this is Sample 1), what kind of composition it is made of and what kind of compound it is made of is determined by EPMA (electroprobe microanalysis).
Analyzer), acceleration voltage 12KV, irradiation current
Under the conditions of 0.1μA, electron beam diameter of 10μ, and coefficient time of 40 seconds,
Upon measurement, sample 1 consisted of phosphorus (P) and boron (B), and P x B 1-x (x = 0.1666)
The result was that it was a compound represented by
また、試料１が結晶でなるのか非晶質でなるの
かについて、反射電子線回折法によるハローパタ
ーンを観察する測定を行つたところ、第５図Ａの
電子顕微鏡写真に示す結果が得られ、また、走査
Ｘ線回折法による回折角θに対するＸ線の強度
（カウント数／秒）の特性を、Ｘ線の加速電圧
14KV、Ｘ線のビーム電流120ｍＡ、走査速度2゜／
分の条件で測定したところ、第６図Ａに示すよう
に、極値を伴つて得られるとしても、BPまは
B13P2で表される結晶化合物である場合の同じ特
性の場合に比し格段的に低い極値しか有さず且つ
なだらかである、という結果が得られた。 In addition, as for whether Sample 1 is crystalline or amorphous, we conducted a measurement by observing the halo pattern by reflection electron beam diffraction, and the results shown in the electron micrograph in Figure 5A were obtained. , the characteristics of the X-ray intensity (counts/second) with respect to the diffraction angle θ by the scanning X-ray diffraction method, and the X-ray acceleration voltage
14KV, X-ray beam current 120mA, scanning speed 2°/
As shown in Figure 6A, when measurements were taken under conditions of
The results showed that the crystalline compound represented by B 13 P 2 had significantly lower extreme values and was gentler than the case of the same characteristics.
上述したところから、試料１が、燐（Ｐ）と、
硼素(B)とからなり、PxB1-x（ただし、ｘ＝0.1666）
で表される非晶質燐・硼素化合物であることを確
認した。 From the above, it can be seen that sample 1 contains phosphorus (P) and
Composed of boron (B), P x B 1-x (x=0.1666)
It was confirmed that it is an amorphous phosphorus-boron compound represented by
例 ２
反応管内に、水素によつて５容量％となるよう
に希釈されているホスフイン（PH3）を80c.c.／分
の流量で導入させるのに代え、水素によつて１容
量％となるように希釈されているホスフイン
（PH3）を83c.c.／分の流量で導入させることを除
いて、例１の場合と同様の方法によつて、熱ヘツ
ド上に保護用層５を形成した。Example 2 Instead of introducing phosphine (PH 3 ) diluted to 5% by volume with hydrogen into the reaction tube at a flow rate of 80 c.c./min, introduce 1% by volume by hydrogen. A protective layer 5 was applied on the thermal head in the same manner as in Example 1, except that phosphine (PH 3 ) diluted to give a flow rate of 83 c.c./min was introduced. Formed.
このようにして形成された保護用層５（これを
試料２とする）について、それがどのような組成
物でなるのかどのような化合物でなるのかについ
て、例１の場合と同様に、EPMAを用い、同様
の条件で測定を行つたところ、試料２が、燐
（Ｐ）と、硼素(B)とからなり、PxB1-x（ただし、
ｘ＝0.04）で表される化合物である、という結果
が得られた。 Regarding the protective layer 5 formed in this way (this is referred to as sample 2), what kind of composition it is made of and what kind of compound it is made of is determined using EPMA in the same manner as in Example 1. Sample 2 was composed of phosphorus (P) and boron (B), and P x B 1-x (however,
The result was that it was a compound represented by x=0.04).
また、試料２が結晶でなるのか非晶質でなるの
かについて、例１の場合と同様に、反射電子線回
折法によるハローパターンを観察する測定を行つ
たところ、第５図Ｂの電子顕微鏡写真に示す結果
が得られ、また、例１の場合と同様に、走査Ｘ線
回折法による回折角θに対するＸ線の強度の特性
を、同様の条件で測定したところ、第６図Ｂに示
すように、例１の場合と同様の結果が得られた。 In addition, to determine whether Sample 2 is crystalline or amorphous, we conducted a measurement to observe the halo pattern by reflection electron beam diffraction in the same manner as in Example 1. In addition, as in Example 1, when the characteristics of the X-ray intensity with respect to the diffraction angle θ were measured using the scanning X-ray diffraction method under the same conditions, the results were as shown in Figure 6B. Similar results as in Example 1 were obtained.
上述したところから、試料２が、燐（Ｐ）と、
硼素(B)とからなり、PxB1-x（ただし、ｘ＝0.04）
で表わされる非晶質燐・硼素化合物であることを
確認した。 From the above, it can be seen that sample 2 contains phosphorus (P) and
Composed of boron (B), P x B 1-x (x=0.04)
It was confirmed that it is an amorphous phosphorus-boron compound represented by
例 ３
反応管内に、水素によつて５容量％となるよう
に希釈されているホスフイン（PH3）を80c.c.／分
の流量で導入させるのに代え、水素によつて１容
量％となるように希釈されているホスフイン
（PH3）を41c.c.／分の流量で導入させることを除
いて、例１の場合と同様の方法で、熱ヘツド上に
保護用層５を形成した。Example 3 Instead of introducing phosphine (PH 3 ) diluted to 5% by volume with hydrogen into the reaction tube at a flow rate of 80 c.c./min, introduce 1% by volume with hydrogen. A protective layer 5 was formed on the thermal head in the same manner as in Example 1, except that phosphine (PH 3 ) diluted to give a flow rate of 41 c.c./min was introduced. .
このようにして形成された保護用層５（これを
試料３とする）について、それがどのような組成
物でなるのかどのような化合物でなるのかについ
て、例１の場合と同様に、EPMAを用い、同様
の条件で測定を行つたところ、試料３が、燐
（Ｐ）と、硼素Ｂとからなり、PxB1-x（ただし、
ｘ＝0.02）で表される化合物である、という結果
が得られた。 Regarding the protective layer 5 formed in this way (this is referred to as sample 3), what kind of composition it is made of and what kind of compound it is made of is determined using EPMA in the same manner as in Example 1. Sample 3 was composed of phosphorus (P) and boron B, and P x B 1-x (however,
The result was that it was a compound represented by x=0.02).
また、試料３が結晶でなるのか非晶質でなるの
かについて、例１の場合と同様に、反射電子線回
折法によるハローパターンを観察する測定を行つ
たところ、第５図Ｃの電子顕微鏡写真に示す結果
が得られ、また、例１の場合と同様に、走査Ｘ線
回折法による回折角θに対するＸ線の強度の特性
を、同様の条件で測定したところ、第６図Ｃに示
すように、例１の場合と同様の結果が得られた。 In addition, to determine whether Sample 3 was crystalline or amorphous, we conducted a measurement to observe the halo pattern by reflection electron beam diffraction in the same manner as in Example 1. In addition, as in Example 1, when the characteristics of the X-ray intensity with respect to the diffraction angle θ were measured using the scanning X-ray diffraction method under the same conditions, the results were as shown in Figure 6C. Similar results as in Example 1 were obtained.
上述したところから、試料３が、燐（Ｐ）と、
硼素(B)とからなり、PxB1-x（ただし、ｘ＝0.02）
で表される非晶質燐・硼素化合物であることを確
認した。 From the above, it can be seen that sample 3 contains phosphorus (P) and
Composed of boron (B), P x B 1-x (x=0.02)
It was confirmed that it is an amorphous phosphorus-boron compound represented by
なお、本発明による非晶質燐・硼素化合物を、
上述した添加物が添加されているものとして得る
場合は、上述した非晶質Px−B1-x（ただし、
0.0196＜ｘ＜0.167）で表される非晶質燐・硼素
化合物を、上述した気相成長法で得るときに、添
加物のハロゲン化合物を用い、その気相分解によ
つて添加物を添加すれば良い。 Note that the amorphous phosphorus/boron compound according to the present invention is
When the above-mentioned additives are added, the above-mentioned amorphous P x −B 1-x (however,
When an amorphous phosphorus/boron compound expressed by 0.0196 < Good.
第１図は、本発明による非晶質燐・硼素化合物
を保護用層として適用し得る熱ヘツドを示す略線
的断面図である。第２図は、本発明による非晶質
燐・硼素化合物を保護用層として適用し得る半導
体光検出ヘツドを示す略線的断面図である。第３
図は、本発明による非晶質燐・硼素化合物を誘電
体層として適用し得る容量素子を示す略線的断面
図である。第４図は、本発明による非晶質燐・硼
素化合物を抵抗体層として適用し得る抵抗素子を
示す略線的断面図である。第５図Ａ〜Ｃは、本発
明による非晶質燐・硼素化合物の説明に供する、
反射電子線回折法によるハローパターンを示す電
子顕微鏡写真である。第６図Ａ〜Ｃは、同様に本
発明による非晶質燐・硼素化合物の説明に供す
る、走査Ｘ線回折法による回折角θに対するＸ線
強度（カウント数／秒）の特性を示す図である。
１……基体、２……発熱用抵抗体層、３，４…
…電極、５……保護用層、６……感熱紙、１２…
…絶縁層、１３……半導体基板、１４……半導体
領域、１５，１６……電極、１７……保護用層、
１８……透光性記録紙、１９……光、２１……絶
縁基板、２２，２４……導電性層、２３……誘電
体層、３１……絶縁基板、３２……抵抗体層、３
３，３４……電極。
FIG. 1 is a schematic cross-sectional view showing a thermal head to which the amorphous phosphorus-boron compound according to the present invention can be applied as a protective layer. FIG. 2 is a schematic cross-sectional view showing a semiconductor photodetection head to which the amorphous phosphorus-boron compound according to the present invention can be applied as a protective layer. Third
The figure is a schematic cross-sectional view showing a capacitive element to which the amorphous phosphorus-boron compound according to the present invention can be applied as a dielectric layer. FIG. 4 is a schematic cross-sectional view showing a resistor element to which the amorphous phosphorus-boron compound according to the present invention can be applied as a resistor layer. FIGS. 5A to 5C provide an explanation of the amorphous phosphorus-boron compound according to the present invention.
It is an electron micrograph showing a halo pattern obtained by reflection electron beam diffraction. FIGS. 6A to 6C are diagrams showing the characteristics of X-ray intensity (counts/second) with respect to the diffraction angle θ by scanning X-ray diffraction method, which also serves to explain the amorphous phosphorus-boron compound according to the present invention. be. DESCRIPTION OF SYMBOLS 1...Base body, 2...Heating resistor layer, 3, 4...
...electrode, 5...protective layer, 6...thermal paper, 12...
... Insulating layer, 13 ... Semiconductor substrate, 14 ... Semiconductor region, 15, 16 ... Electrode, 17 ... Protective layer,
18... Transparent recording paper, 19... Light, 21... Insulating substrate, 22, 24... Conductive layer, 23... Dielectric layer, 31... Insulating substrate, 32... Resistor layer, 3
3, 34...electrode.
Claims (1)
だし、0.0196＜ｘ＜0.167）で表されることを特
徴とする非晶質燐・硼素化合物。1. An amorphous phosphorus-boron compound consisting of phosphorus (P) and boron (B) and characterized by being represented by P x B 1-x (0.0196<x<0.167).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10060278A JPS5527863A (en) | 1978-08-18 | 1978-08-18 | Amorphous phosphorus boron compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10060278A JPS5527863A (en) | 1978-08-18 | 1978-08-18 | Amorphous phosphorus boron compound |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527863A JPS5527863A (en) | 1980-02-28 |
| JPS6411562B2 true JPS6411562B2 (en) | 1989-02-27 |
Family
ID=14278405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10060278A Granted JPS5527863A (en) | 1978-08-18 | 1978-08-18 | Amorphous phosphorus boron compound |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527863A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH032664U (en) * | 1989-05-31 | 1991-01-11 | ||
| US9248268B2 (en) | 2009-11-17 | 2016-02-02 | C. R. Bard, Inc. | Overmolded access port including anchoring and identification features |
| US9265912B2 (en) | 2006-11-08 | 2016-02-23 | C. R. Bard, Inc. | Indicia informative of characteristics of insertable medical devices |
| US9421352B2 (en) | 2005-04-27 | 2016-08-23 | C. R. Bard, Inc. | Infusion apparatuses and methods of use |
| US9474888B2 (en) | 2005-03-04 | 2016-10-25 | C. R. Bard, Inc. | Implantable access port including a sandwiched radiopaque insert |
| US9579496B2 (en) | 2007-11-07 | 2017-02-28 | C. R. Bard, Inc. | Radiopaque and septum-based indicators for a multi-lumen implantable port |
-
1978
- 1978-08-18 JP JP10060278A patent/JPS5527863A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH032664U (en) * | 1989-05-31 | 1991-01-11 | ||
| US9474888B2 (en) | 2005-03-04 | 2016-10-25 | C. R. Bard, Inc. | Implantable access port including a sandwiched radiopaque insert |
| US9421352B2 (en) | 2005-04-27 | 2016-08-23 | C. R. Bard, Inc. | Infusion apparatuses and methods of use |
| US9265912B2 (en) | 2006-11-08 | 2016-02-23 | C. R. Bard, Inc. | Indicia informative of characteristics of insertable medical devices |
| US9579496B2 (en) | 2007-11-07 | 2017-02-28 | C. R. Bard, Inc. | Radiopaque and septum-based indicators for a multi-lumen implantable port |
| US9248268B2 (en) | 2009-11-17 | 2016-02-02 | C. R. Bard, Inc. | Overmolded access port including anchoring and identification features |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5527863A (en) | 1980-02-28 |
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