JPS643058B2 - - Google Patents
Info
- Publication number
- JPS643058B2 JPS643058B2 JP58060536A JP6053683A JPS643058B2 JP S643058 B2 JPS643058 B2 JP S643058B2 JP 58060536 A JP58060536 A JP 58060536A JP 6053683 A JP6053683 A JP 6053683A JP S643058 B2 JPS643058 B2 JP S643058B2
- Authority
- JP
- Japan
- Prior art keywords
- bump
- bumps
- bonding
- external
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
- H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の属する技術分野の説明
本発明は集積回路の配線用入出力端子の物理的
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Description of the technical field to which the invention pertains The present invention relates to the physical structure of wiring input/output terminals of integrated circuits.
(2) 従来技術の説明
従来の集積回路(以下ICと呼ぶ)の配線用入
出力端子(以下バンプと呼ぶ)は単一バンプのた
め、熱圧着(以下ボンデイングと呼ぶ)によるリ
ード線圧着後、バンプ形状が変化し、リード線の
ボンデイング後は同時に全バンプをプロービング
することが困難であつた。(2) Description of conventional technology Since the wiring input/output terminals (hereinafter referred to as bumps) of conventional integrated circuits (hereinafter referred to as ICs) are single bumps, after lead wire crimping by thermocompression bonding (hereinafter referred to as bonding), The shape of the bumps changed and it was difficult to probe all the bumps at the same time after bonding the lead wires.
(3) 発明の目的の説明
本発明の目的は、リード線ボンデイング用と、
プロービング用とのバンプを別個に設けることに
より前記の欠点を除去したバンプ方式を提供する
ことにある。(3) Description of the purpose of the invention The purpose of the present invention is to provide lead wire bonding;
The object of the present invention is to provide a bump system that eliminates the above-mentioned drawbacks by separately providing bumps for probing and bumps.
(4) 発明の構成
すなわち、本発明は、ICのバンプ構造におい
て、電気的、物理的に接続されている2つ以上の
バンプをIC上の内外に設け、外側のバンプを熱
圧着(ボンデイング)用として、他のバンプを再
プロービング、再配線用としたことを特徴とす
る。(4) Structure of the Invention In other words, the present invention provides an IC bump structure in which two or more bumps that are electrically and physically connected are provided on the inside and outside of the IC, and the outer bumps are bonded by thermocompression (bonding). The other bumps are used for reprobing and rewiring.
(5) この発明の実施例の説明
次に本発明の実施例について図面を参照して詳
細に説明する。図において、IC1は基板5に固
定されており、IC1の上面には入出力信号及び
電源等外部引出しのためのバンプ2a,2bを設
け、一方のバンプ2aをIC1の外縁に、他方の
バンプ2bを内側に形成する。バンプ2aと2b
とはIC1を製造する段階で同一物質の配線2c
で物理的に接続されている。バンプ2aはリード
線3により外部端子4に接続されるものである。
すなわち、バンプ2aと外部端子4とはリード線
3a,3bの位置をボンデイングすることにより
接続される。このとき、ボンデイングされるリー
ド線3aとバンプ2aとはボンデイングにより沈
み込む。この沈み込み量6とボンデイング位置と
の関係は各々の端子により異なるため、全バンプ
を同時にプロービングすることはできないが内側
のバンプ2bはバンプが形成されたままの状態
(無傷、同一高さの状態)であることから、何ら
の影響を受けることなくプロービングあるいは他
の外部配線に再配線が可能となる。(5) Description of embodiments of the present invention Next, embodiments of the present invention will be described in detail with reference to the drawings. In the figure, IC1 is fixed to a substrate 5, and bumps 2a and 2b are provided on the top surface of IC1 for external extraction of input/output signals and power supply, etc. One bump 2a is placed on the outer edge of IC1, and the other bump 2b is provided on the top surface of IC1. is formed inside. Bumps 2a and 2b
is the wiring 2c made of the same material at the stage of manufacturing IC1.
physically connected. The bump 2a is connected to an external terminal 4 via a lead wire 3.
That is, the bump 2a and the external terminal 4 are connected by bonding the positions of the lead wires 3a and 3b. At this time, the lead wire 3a and bump 2a to be bonded sink down due to bonding. Since the relationship between the amount of depression 6 and the bonding position differs depending on each terminal, it is not possible to probe all the bumps at the same time, but the inner bump 2b is in the state where the bump is still formed (in the state where it is intact and at the same height). ), it is possible to perform probing or rewiring to other external wiring without any influence.
(6) 発明の効果の説明
以上のようなバンプ構造にしておくことによ
り、直接IC1を全バンプ同時にプロービングで
きる効果があり、特にIC1を外部回路から切離
し(リード線を切断)した後でもIC1をプロー
ビング、あるいは外部回路に再配線できる利点が
ある。(6) Explanation of the effects of the invention By having the bump structure as described above, it is possible to directly probe all the bumps of IC1 at the same time, and in particular, it is possible to probe IC1 directly even after disconnecting IC1 from the external circuit (cutting the lead wire). It has the advantage of being able to be probed or rewired to external circuits.
図は本発明の一実施例を示す半導体集積回路の
断面図である。
1……IC、2a,2b……バンプ、3……リ
ード線、3a,3b……ボンデイング位置、4…
…外部端子、5……基板。
The figure is a sectional view of a semiconductor integrated circuit showing an embodiment of the present invention. 1...IC, 2a, 2b...bump, 3...lead wire, 3a, 3b...bonding position, 4...
...External terminal, 5... Board.
Claims (1)
造において、電気的物理的に接続された2つ以上
の端子を集積回路上の内外に設け、外側の端子を
熱圧着用とし、他の内側の端子を再プロービン
グ、再配線用としたことを特徴とする集積回路の
端子構造。1. In the structure of integrated circuit wiring input/output terminals and power supply terminals, two or more electrically and physically connected terminals are provided inside and outside the integrated circuit, the outer terminal is for thermocompression, and the other inner An integrated circuit terminal structure characterized in that the terminals are used for reprobing and rewiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58060536A JPS59186347A (en) | 1983-04-06 | 1983-04-06 | Terminal structure of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58060536A JPS59186347A (en) | 1983-04-06 | 1983-04-06 | Terminal structure of integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59186347A JPS59186347A (en) | 1984-10-23 |
| JPS643058B2 true JPS643058B2 (en) | 1989-01-19 |
Family
ID=13145118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58060536A Granted JPS59186347A (en) | 1983-04-06 | 1983-04-06 | Terminal structure of integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59186347A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57133651A (en) * | 1981-02-12 | 1982-08-18 | Nec Corp | Semiconductor integrated circuit device |
-
1983
- 1983-04-06 JP JP58060536A patent/JPS59186347A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59186347A (en) | 1984-10-23 |
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