JPS643351B2 - - Google Patents
Info
- Publication number
- JPS643351B2 JPS643351B2 JP17230880A JP17230880A JPS643351B2 JP S643351 B2 JPS643351 B2 JP S643351B2 JP 17230880 A JP17230880 A JP 17230880A JP 17230880 A JP17230880 A JP 17230880A JP S643351 B2 JPS643351 B2 JP S643351B2
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- superlattice
- optical
- light
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/024—Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3556—Semiconductor materials, e.g. quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
この発明は、光双安定素子の集積化と、動作可
能温度を引き上げるようにした集積型光双安定素
子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the integration of optical bistable devices and to an integrated optical bistable device that can be operated at a higher temperature.
第1図は従来の光双安定素子の構造を示す図で
ある。この第1図において、1はGaAs層であ
り、このGaAs層1は4〜5μm程度であり、これ
を本体にして、その内面から0.2μmの厚さの
Al0.42Ga0.58As2,3をサンドイツチとした構造
を分子ビームエピタキシセルで光双安定素子を作
り、さらに、その外側に反射率R=0.9の誘導体
反射膜4,5を被覆して構成されている。 FIG. 1 is a diagram showing the structure of a conventional optical bistable device. In this Figure 1, 1 is a GaAs layer, and this GaAs layer 1 is about 4 to 5 μm in thickness.
An optical bistable element is fabricated using a molecular beam epitaxy cell with a structure in which Al 0.42 Ga 0.58 As2, 3 is used as a sandwich arch, and furthermore, the outside is coated with dielectric reflective films 4, 5 with a reflectance R = 0.9. .
光双安定素子の名は、光強度とともに、吸収あ
るいは分散が非線形的に変化する媒質をフアブ
リ・ペロー共振器内に挿入した構成において、入
射光のある状態に対して、出力光が二つの安定状
態のいずれかを取り得ることに由来している。 The name optical bistable device refers to a structure in which a medium whose absorption or dispersion changes nonlinearly with the light intensity is inserted into a Fabry-Perot resonator. It originates from the fact that it can take any of the following states.
このような光双安定素子の特徴は、光の入出力
強度特性における非直線性と履歴効果があり、光
メモリ、スイツチ、論理動作、3極管動作、画像
のコントラスト制御などにこの光双安定素子を用
いることができる。 The characteristics of such optical bistable devices include nonlinearity and hysteresis effect in the light input/output intensity characteristics, and optical bistable devices are used in optical memories, switches, logic operations, triode operations, image contrast control, etc. can be used.
また、その過渡特性を利用すると、再生発振、
パルス例の発生、単安定および双安定マルチバイ
ブレータ動作などが可能である。 In addition, by utilizing its transient characteristics, regenerative oscillation,
Generation of pulse examples, monostable and bistable multivibrator operation, etc. are possible.
次に、動作について説明する。第1図に示す
GaAs光双安定素子は媒質としてGaAsのエキシ
トン状態を用い、その両側のAl0.42Ga0.58As2,
3の層は電子のとじ込めをよくするためのヘテロ
接合を形成している。また、誘導体反射膜4,5
は光共振器を形成している。 Next, the operation will be explained. Shown in Figure 1
A GaAs optical bistable device uses the exciton state of GaAs as a medium, and on both sides Al 0.42 Ga 0.58 As2,
Layer 3 forms a heterojunction to better trap electrons. In addition, the dielectric reflective films 4 and 5
forms an optical resonator.
この光双安定素子にGaAsのエキシトン状態の
エネルギギヤツプよりわずかに短い波長の光を照
射し、その照射光(以下、入射光Iiと云う)強度
を次第に増加して行くと、ある入力光Iiの光量の
値に対して、急激に透過光(以下、出力光Itと云
う)強度が増加する。 When this optical bistable element is irradiated with light with a wavelength slightly shorter than the energy gap of the exciton state of GaAs and the intensity of the irradiated light (hereinafter referred to as incident light Ii) is gradually increased, the light intensity of a certain input light Ii The intensity of transmitted light (hereinafter referred to as output light It) increases rapidly with respect to the value of .
一方、入力光Iiの光量を漸減させて行くときに
は、それ(入力光量増加時の光力光の立上りに対
応する光量)より低い入力光量まで出力光Itの強
度が強いままである。すなわち、ある入力光量に
対して、二つの安定な出力光状態があり、入力光
の増減に対して、出力光に履歴効果が現われる。 On the other hand, when the light intensity of the input light Ii is gradually decreased, the intensity of the output light It remains strong until the input light intensity is lower than that (the light intensity corresponding to the rise of the optical power light when the input light intensity increases). That is, there are two stable output light states for a certain amount of input light, and a history effect appears in the output light as the input light increases or decreases.
第2図はこの状態を示したものであり、横軸に
入力光量、縦軸に出力光量をとつて示すものであ
り、この第2図における特性aは媒質なしの場合
を示し、特性bは媒質有りの場合を示している。
この特性bより明らかなように、上述のごとく履
歴効果が現われていることがわかる。 Figure 2 shows this state, with the input light amount on the horizontal axis and the output light amount on the vertical axis.Characteristic a in Figure 2 shows the case without a medium, and characteristic b shows the case. The case with a medium is shown.
As is clear from this characteristic b, it can be seen that the history effect appears as described above.
また、第1図から、入出力光量に対して、非線
形性があることもわかる。 Furthermore, from FIG. 1, it can be seen that there is nonlinearity with respect to the amount of input and output light.
従来の光双安定素子は以上のように、プレート
で構成されているので、空間画像処理用の2次元
アレイ化には適しているが、光論理演算素子とし
て使用する場合には、素子の集積化が必要であ
る。また、従来の素子では低温(〜120〓まで)
でしか動作せず、常温(〜300〓)動作可能な素
子の実現が望まれている。 As described above, conventional optical bistable devices are composed of plates, so they are suitable for forming two-dimensional arrays for spatial image processing, but when used as optical logic operation devices, it is difficult to integrate the devices. It is necessary to In addition, conventional elements have low temperatures (up to ~120〓)
It is desired to create a device that can operate at room temperature (~300℃).
この発明は、上記諸点にかんがみなされたもの
で、集積化および常温動作を可能にできる集積型
光双安定素子を提供することを目的とする。 The present invention has been made in consideration of the above points, and an object of the present invention is to provide an integrated optical bistable device that can be integrated and operate at room temperature.
以下、この発明の集積型光双安定素子の実施例
について図面に基づき説明する。第3図はその一
実施例の構成を示す断面図である。第3図におい
て、基板19上には超格子光導波路14が形成さ
れている。また、超格子光導波路14上には入力
光12を導く入力光導波路11および出力光18
を導く出力光導波路17が所望間隔離して形成さ
れ、そして入力光導波路11および出力光導波路
17の相対向する線部にはテーパカツプラー13
a,13bがそれぞれ形成されている。 Embodiments of the integrated optical bistable device of the present invention will be described below with reference to the drawings. FIG. 3 is a sectional view showing the configuration of one embodiment. In FIG. 3, a superlattice optical waveguide 14 is formed on a substrate 19. Further, on the superlattice optical waveguide 14, there is an input optical waveguide 11 that guides the input light 12 and an output optical waveguide 18 that guides the input light 12.
An output optical waveguide 17 is formed to be separated by a desired distance, and a taper coupler 13 is provided at the opposing line portions of the input optical waveguide 11 and the output optical waveguide 17.
a and 13b are formed respectively.
上記テーパカツプラー13aは入力光導波路1
1と超格子光導波路14間での光の結合を実現す
るためのものであり、またテーパカツプラー13
bは出力光導波路17と超格子光導波路間での光
の結合を実現するためのものである。 The taper coupler 13a is connected to the input optical waveguide 1.
1 and the superlattice optical waveguide 14, and the taper coupler 13
b is for realizing optical coupling between the output optical waveguide 17 and the superlattice optical waveguide.
また、上記入力光導波路11および出力光導波
路17の上面には、ブラツグ反射用回折格子15
a,15bが、それぞれ形成され、この両ブラツ
グ反射用回折格子15a,15bおよびテーパカ
ツプラー13a,13bによつて、ブラツグ反射
用回折格子15a,15b間に位置する超格子光
導波路14の部分に光16が多重反射するように
し、これによつて超格子光導波路14の中に光を
閉じ込めるようになつている。 Further, on the upper surfaces of the input optical waveguide 11 and the output optical waveguide 17, a Bragg reflection diffraction grating 15 is provided.
a, 15b are respectively formed, and the portion of the superlattice optical waveguide 14 located between the Bragg reflection diffraction gratings 15a, 15b is formed by both the Bragg reflection diffraction gratings 15a, 15b and the taper couplers 13a, 13b. The light 16 is subjected to multiple reflections, thereby confining the light within the superlattice optical waveguide 14.
次に、以上のように構成されたこの発明の集積
型光双安定素子の動作について説明する。 Next, the operation of the integrated optical bistable device of the present invention configured as described above will be explained.
入力光導波路11から入射した入力光12はブ
ラツグ反射用回折格子15aで一部反射される
が、残りの光はテーパカツプラー13aに導かれ
超格子光導波路14へ結合される。超格子光導波
路14へ入射した光16は光導波路14内を多重
反射し進行し、もう一方の側に設けられたテーパ
カツプラー13bから出力光導波路17に導かれ
る。ここでまた、ブラツグ反射用回折格子15b
により光の一部が反射され、もときた光路を逆に
辿り、上記の入射用回折格子15aとの間で多重
反射を行う。つまり、回折格子15aと15bは
従来の光双安定素子の反射膜4,5と同様な機能
をもつ。回折格子15aと15bの間で多重反射
する光の一部は出力側回折格子15bを透過して
出力光18となる。入出力光導波路11と17は
例えばAlxGa1-xAs層とし、超格子光導波路の光
吸収端よりエネルギーの大きい吸収端をもつよう
にxを選択する。ブラツグ反射用回折格子15a
と15bはこのAlxGa1-xAs層の一部にレーザ光
のホログラフイー干渉とフオトリングラフイ法に
よりフオトレジストのパターニングを行い、これ
をマスクとしてAlxGa1-xAs層をエツチングして
形成する。またテーパカツプラー13a,13b
の形成は、収束イオンビームエツチングを用いて
微小断差を多数回繰り返して行われる。 Input light 12 entering from input optical waveguide 11 is partially reflected by Bragg reflection diffraction grating 15a, but the remaining light is guided to taper coupler 13a and coupled to superlattice optical waveguide 14. The light 16 incident on the superlattice optical waveguide 14 undergoes multiple reflections within the optical waveguide 14 and travels, and is guided to the output optical waveguide 17 from the taper coupler 13b provided on the other side. Here again, the Bragg reflection diffraction grating 15b
A part of the light is reflected, retraces the original optical path, and undergoes multiple reflections with the incident diffraction grating 15a. In other words, the diffraction gratings 15a and 15b have the same function as the reflective films 4 and 5 of the conventional optical bistable element. A part of the light multiple-reflected between the diffraction gratings 15a and 15b passes through the output side diffraction grating 15b and becomes output light 18. The input/output optical waveguides 11 and 17 are made of, for example, an Al x Ga 1-x As layer, and x is selected so as to have an absorption edge with higher energy than the optical absorption edge of the superlattice optical waveguide. Bragg reflection diffraction grating 15a
and 15b, a photoresist is patterned on a part of this Al x Ga 1-x As layer using the holographic interference of laser light and the photoresist method, and the Al x Ga 1-x As layer is etched using this as a mask. and form it. Also, taper couplers 13a, 13b
The formation of the microscopic gap is performed many times using focused ion beam etching.
超格子光導波路14は例えば、GaAsとAly
Ga1-yAsの層(それぞれ50〜500Å)を分子線エ
ピタキシー(MBE)法で交互に積重ねた多層超
格子層と、それをサンドイツチするAlzGa1-zAs
層から形成するものが考えられる。多層超格子層
のGaAs層はキヤリア(エキシトン)を閉じ込め
る作用を、両側のAlzGa1-zAs層は光子を閉じ込
める作用を果す。 The superlattice optical waveguide 14 is made of, for example, GaAs and Al y
A multilayer superlattice layer in which layers of Ga 1-y As (50 to 500 Å each) are stacked alternately using the molecular beam epitaxy (MBE) method and Al z Ga 1-z As sandwiched between the layers are stacked alternately using the molecular beam epitaxy (MBE) method.
One possibility is to form it from layers. The GaAs layer of the multilayer superlattice layer functions to confine carriers (exciton), and the Al z Ga 1-z As layers on both sides function to confine photons.
また、超格子光導波路4では、エキシトンの結
合エネルギが理論的に普通のバルク光導波路の4
倍まで増加することが知られている。このことか
ら、大きな熱エネルギ状態(すなわち、より高い
温度)においても、エキシトン状態が保存される
ので、これまでの低温(〜120〓)動作から常温
動作への可能性を有する。 In addition, in the superlattice optical waveguide 4, the coupling energy of excitons is theoretically lower than that of a normal bulk optical waveguide.
It is known to increase by up to 2 times. From this, the exciton state is preserved even in a large thermal energy state (that is, at a higher temperature), so there is a possibility of changing from the conventional low-temperature (~120°) operation to normal-temperature operation.
このようなこの発明の集積型光双安定素子にお
いて、入力光12の強度を増減するとき、第2図
の特性bと同様の入出力光特性が得られる。 In such an integrated optical bistable device of the present invention, when the intensity of the input light 12 is increased or decreased, input/output optical characteristics similar to characteristic b in FIG. 2 can be obtained.
なお、上記実施例では、純光学的に動作する光
双安定素子について説明したが、第4図に示すよ
うに、超格子光導波路14と基板19の裏面にそ
れぞれ電極20a,20bを具備した素子は光だ
けでなく、電気信号によつても、動作できるよう
に、多機能素子となり得る。すなわち、電極20
a,20bへの注入電流が零の場合は、当然なが
ら、第3図の集積型光双安定素子と同様の機能を
有し、注入電流がある値以上では、レーザ発振器
として動作する。 In the above embodiment, an optical bistable device that operates purely optically was explained, but as shown in FIG. can be a multifunctional device, as it can be operated not only by light but also by electrical signals. That is, the electrode 20
When the current injected into a and 20b is zero, it naturally has the same function as the integrated optical bistable device shown in FIG. 3, and when the current injected exceeds a certain value, it operates as a laser oscillator.
また、中間の注入電流に対して、入力光2が存
在する場合には、この素子は光結合型レーザ双安
定素子として動作する。 Furthermore, for intermediate injection currents, when input light 2 is present, the device operates as an optically coupled laser bistable device.
次に超格子光導波路上に形成されたブラツグ反
射回折格子を有する集積型光双安定素子について
述べる。 Next, an integrated optical bistable device having a Bragg reflection grating formed on a superlattice optical waveguide will be described.
第5図はその一実施例の構成図である。この第
5図において、15は超格子光導波路上に形成さ
れたブラツグ反射回折格子である。回折格子15
は、例えばホログラフイツク法またはイオンビー
ムエツチングによつて形成される。入射光12は
テーパカツプラー13aから超格子光導波路に導
かれる。この光の一部はテーパカツプラー13b
の方向に進行する間に回折格子15で回折され、
入射方向に逆進する光波を発生する。この回折波
は再び回折格子15で回折され元の入射光に加わ
る。つまり回折格子15は第3図、第4図の回折
格子15a,15bと同様に入射光をこの領域に
閉じ込める、いわゆる光共振器の作用をもつ。従
つて第3図と同様に、入射光12の強度を増減す
るとき第2図の特性bに示す様な光双安定特性が
得られる。 FIG. 5 is a configuration diagram of one embodiment. In FIG. 5, 15 is a Bragg reflection diffraction grating formed on the superlattice optical waveguide. Diffraction grating 15
is formed, for example, by holographic methods or ion beam etching. The incident light 12 is guided from the taper coupler 13a to the superlattice optical waveguide. A part of this light is the taper coupler 13b
While traveling in the direction, it is diffracted by the diffraction grating 15,
Generates a light wave that travels backwards in the direction of incidence. This diffraction wave is again diffracted by the diffraction grating 15 and added to the original incident light. In other words, the diffraction grating 15 has the function of a so-called optical resonator, confining the incident light in this region, similar to the diffraction gratings 15a and 15b in FIGS. 3 and 4. Therefore, as in FIG. 3, when the intensity of the incident light 12 is increased or decreased, an optical bistability characteristic as shown in characteristic b in FIG. 2 is obtained.
また、第4図と同様な電極を設け、この電極に
逆バイアスを引加することにより励起子状態を変
化させ、これにより光双安定特性を制御できる。 Furthermore, by providing an electrode similar to that shown in FIG. 4 and applying a reverse bias to this electrode, the exciton state can be changed, thereby controlling the optical bistability characteristic.
以上のように、この発明の集積型光双安定素子
によれば、基板上に入力光強度に対して吸収また
は分散あるいはその両方が非線形性を示す超格子
光導波路の上部に入力光導波路と出力光導波路を
形成するとともに、この入力光導波路と出力光導
波路が超格子光導波路との結合に、テーパカツプ
ラーを設け、入力光導波路からの入力光はテーパ
カツプラーを通して超格子光導波路に導いてそこ
で閉じ込めた後、テーパカツプラーを通して出力
光導波路に導くようにしたので、集積化と常温動
作が可能となる。 As described above, according to the integrated optical bistable device of the present invention, the input optical waveguide and the output optical waveguide are disposed on the upper part of the superlattice optical waveguide which exhibits nonlinearity in absorption, dispersion, or both with respect to input light intensity on the substrate. In addition to forming an optical waveguide, a taper coupler is provided to connect the input optical waveguide and the output optical waveguide to the superlattice optical waveguide, and the input light from the input optical waveguide is guided to the superlattice optical waveguide through the taper coupler. After confining it there, it is guided to the output optical waveguide through a taper coupler, making it possible to integrate it and operate at room temperature.
また、光双安定素子本来の光メモリ、光スイツ
チ、光演算などの多機能性により、各種光情報処
理装置の基本部品として、幅広い応用が期待でき
るなどの効果を奏するものである。 Furthermore, due to the inherent multifunctionality of optical bistable elements such as optical memory, optical switches, and optical calculation, they can be expected to have a wide range of applications as basic components of various optical information processing devices.
第1図は従来の光双安定素子の構造を示す図、
第2図は第1図の光双安定素子の入出力特性を示
す図、第3図はこの発明の集積型光双安定素子の
一実施例の構成を示す図、第4図の集積型光双安
定素子の他の実施例の構成を示す図、第5図はこ
の発明の集積型光双安定素子のさらに他の実施例
の構成を示す図である。
11……入力光導波路、13a,13b……テ
ーパカツプラー、14……超格子光導波路、15
a,15b……ブラツク反射用回折格子、17…
…出力光導波路、19……基板、20a,20b
……電極。なお、図中同一符号は同一または相当
部分を示す。
Figure 1 shows the structure of a conventional optical bistable device.
2 is a diagram showing the input/output characteristics of the optical bistable device shown in FIG. 1, FIG. 3 is a diagram showing the configuration of an embodiment of the integrated optical bistable device of the present invention, and FIG. FIG. 5 is a diagram showing the structure of another embodiment of the bistable device. FIG. 5 is a diagram showing the structure of still another embodiment of the integrated optical bistable device of the present invention. 11... Input optical waveguide, 13a, 13b... Taper coupler, 14... Superlattice optical waveguide, 15
a, 15b...Diffraction grating for black reflection, 17...
...Output optical waveguide, 19...Substrate, 20a, 20b
……electrode. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
たは分散あるいはその両方が非線形性を示す超格
子光導波路、この超格子光導波路上に形成された
入力光導波路と出力光導波路、上記超格子光導波
路上において上記入力光導波路と出力光導波路を
入力光に対して上記超格子光導波路と結合するテ
ーパカツプラー、上記入力光導波路および出力光
導波路または超格子光導波路上に形成されたブラ
ツグ反射用回折格子を備えてなる集積型光双安定
素子。 2 超格子光導波路へのキヤリア注入用の電極を
基板の裏面側と上記超格子光導波路に設けてレー
ザ発振器としての機能も呈し得ることを特徴とす
る特許請求の範囲第1項記載の集積型光双安定素
子。[Claims] 1. A superlattice optical waveguide formed on a substrate and exhibiting nonlinearity in absorption and/or dispersion with respect to input light intensity, an input optical waveguide and an output optical waveguide formed on the superlattice optical waveguide. a taper coupler for coupling the input optical waveguide and the output optical waveguide with the superlattice optical waveguide for input light on the superlattice optical waveguide, and a taper coupler on the input optical waveguide and the output optical waveguide or the superlattice optical waveguide. An integrated optical bistable device comprising a formed Bragg reflection diffraction grating. 2. The integrated type according to claim 1, characterized in that an electrode for carrier injection into the superlattice optical waveguide is provided on the back side of the substrate and the superlattice optical waveguide, so that it can also function as a laser oscillator. Optical bistable element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17230880A JPS5795690A (en) | 1980-12-05 | 1980-12-05 | Integrated type photo bistable element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17230880A JPS5795690A (en) | 1980-12-05 | 1980-12-05 | Integrated type photo bistable element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5795690A JPS5795690A (en) | 1982-06-14 |
| JPS643351B2 true JPS643351B2 (en) | 1989-01-20 |
Family
ID=15939506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17230880A Granted JPS5795690A (en) | 1980-12-05 | 1980-12-05 | Integrated type photo bistable element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5795690A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1248381A (en) * | 1982-10-01 | 1989-01-10 | Anis Husain | Selection and application of highly nonlinear optical media |
-
1980
- 1980-12-05 JP JP17230880A patent/JPS5795690A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5795690A (en) | 1982-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5131060A (en) | Optical waveguide modulator communications device and method of modulating light using same | |
| JPS60134219A (en) | Optical switch | |
| JPH08220496A (en) | Semiconductor optical modulation element | |
| US5101293A (en) | Electrooptic device for modulation of intensity and phase of transmitted or reflected light at discrete operating wavelengths | |
| US5155737A (en) | Semiconductor wavelength conversion device | |
| JP2001215542A (en) | Nonlinear optical element | |
| US5444802A (en) | Optical switch | |
| US5153687A (en) | Semiconductor optical functional device with parabolic wells | |
| JPS643351B2 (en) | ||
| JP2762490B2 (en) | Optical element | |
| JPS61212823A (en) | Optical modulator | |
| JPS6247620A (en) | Waveguide type optical switch | |
| JPH01178933A (en) | Optical switch | |
| JPH0656456B2 (en) | Planar light control element | |
| EP0361651B1 (en) | Optical element and method of modulating light by using the same | |
| JPS6297386A (en) | Distributed feedback type bistable semiconductor laser | |
| AU653261B2 (en) | Current injection modulator | |
| JP2902367B2 (en) | Light modulator | |
| JPH03240285A (en) | Bistable semiconductor laser | |
| JP2676942B2 (en) | Light modulator | |
| JPH0638539B2 (en) | Optical bistable integrated device | |
| US5093746A (en) | Current injection modulator | |
| JP2707610B2 (en) | Nonlinear semiconductor optical directional coupler | |
| JPH0695182A (en) | Optical switch | |
| AU652479B2 (en) | Electrooptic modulator |