JPS6444069A - Formation of fine structure - Google Patents
Formation of fine structureInfo
- Publication number
- JPS6444069A JPS6444069A JP62201099A JP20109987A JPS6444069A JP S6444069 A JPS6444069 A JP S6444069A JP 62201099 A JP62201099 A JP 62201099A JP 20109987 A JP20109987 A JP 20109987A JP S6444069 A JPS6444069 A JP S6444069A
- Authority
- JP
- Japan
- Prior art keywords
- film
- alignment
- thin film
- fine structure
- reproducibility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
- H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the reproducibility of a dimensional accuracy due to the influence of deviation of alignment at the time of alignment by not employing an alignment method of severe alignment accuracy to form an insulating film fine structure. CONSTITUTION:A patterned first thin film is formed on a semiconductor crystalline layer, and covered with a second thin film. Then, an etching mask material 14 is so formed by an alignment method as to dispose one end on the second thin film, etched by anisotropic dry etching, and a second thin film 17 remains only on the second side face of the first film. After the remaining film 17 the first film and the crystalline layer are covered with third thin films 18, the film 18 is etched by anisotropic dry etching, and a step of retaining the film 18 as shown is included. Thus, a disadvantage of reducing the reproducibility of characteristics by the influence of the deviation of alignment in case of forming the resist film can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201099A JPS6444069A (en) | 1987-08-11 | 1987-08-11 | Formation of fine structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201099A JPS6444069A (en) | 1987-08-11 | 1987-08-11 | Formation of fine structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6444069A true JPS6444069A (en) | 1989-02-16 |
Family
ID=16435380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62201099A Pending JPS6444069A (en) | 1987-08-11 | 1987-08-11 | Formation of fine structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6444069A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
-
1987
- 1987-08-11 JP JP62201099A patent/JPS6444069A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376812A (en) * | 1989-04-12 | 1994-12-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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