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JPS645459B2 - - Google Patents
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JPS645459B2 - - Google Patents

Info

Publication number
JPS645459B2
JPS645459B2 JP56187331A JP18733181A JPS645459B2 JP S645459 B2 JPS645459 B2 JP S645459B2 JP 56187331 A JP56187331 A JP 56187331A JP 18733181 A JP18733181 A JP 18733181A JP S645459 B2 JPS645459 B2 JP S645459B2
Authority
JP
Japan
Prior art keywords
bonding
silver
zinc
wire
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56187331A
Other languages
Japanese (ja)
Other versions
JPS5887840A (en
Inventor
Shozo Hayashi
Yasuo Fukui
Kenichi Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP56187331A priority Critical patent/JPS5887840A/en
Publication of JPS5887840A publication Critical patent/JPS5887840A/en
Publication of JPS645459B2 publication Critical patent/JPS645459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01551Changing the shapes of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To enhance performance of bonding when thermocompression bonding is to be used by a method wherein at least the specified quantity of one element selected from the group of silver (Ag) and zinc (Zn) is made to be contained in high pure Al. CONSTITUTION:At least one element selected from the group of 1-30wt% Ag, and 0.5-15wt% Zn is made to be contained in high pure Al. Addition of silver (Ag) and zinc (Zn) mentioned above makes intensity and surface tension of Al to enlarge, and an actual effect is little when content thereof is 1wt% Ag, 0.5wt% Zn, while when silver exceeds 30wt%, hardness increases too much to generate an evil influence of reduction of bonding strength, and when zinc exceeds 15wt%, hardness increases too much while corrosion resistance is reduced to generate an evil influence of reduction of bonding strength. Therefore it is desirable to make the total content to 30wt% or less when both the elements of silver and zinc are to be added. Accordingly, because tensile strength is improved by this way as compared with the usual Al wire, generation of disconnection during the wire drawing process, or generation of disconnection during bonding work can be prevented.

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は半導体素子のチツプ電極と外部リード
を接続するために使用するワイヤボンデイング用
Al線に関する。 従来、一般的に使用されているAu線はシリコ
ンチツプ電極として蒸着されているAlと容易に
金属間化合物をつくり、その結果ボンデイング強
度を著しく低下させるため該Au線の代替として
シリコンチツプ電極と同種のAl線が使用されて
いる。 このAl線は高純度の場合にあつては軟かすぎ
て超音波ボンデイング強度が十分に得られないの
で、その硬さを増すためと極細線加工をし易すく
するために1wt%のシリコン(Si)を添加して使
用している。 しかし、このAl線は化学的に活性金属である
ことから酸化し易すく高温下で接合させる熱圧着
法には不適であつて、もつぱら超音波接合法によ
り接合作業が行なわれていた。 最近、アルゴンガスなど不活性ガス雰囲気を利
用することにより、Al線においてもAu線と同様
に熱圧着法の採用が可能となつた。 しかるに従来使用されるAl線は前述のように
高純度(99.9%以上)のAlに1wt%のシリコンを
含有させたものであるが、このAl線で熱圧着し
た場合にはAlボールの形状が安定しないばかり
でなく、結晶微細化に劣り接着強度が小さすぎる
とともに高速ボンダーを使用するに十分な機械的
強度が得られないなど、ボンデイング性能に劣る
不具合がみられた。 本発明は斯る従来Al線の不具合を所定の添加
元素を含有させることによつて解消し、熱圧着法
によるボンデイング性能を向上させることを目的
とするもので、1wt%のシリコンを添加しない高
純度のAlに、1〜30wt%Ag、および0.5〜15wt
%Znの群より選択された少なくとも一元素を含
有せしめたことを特徴とする。 尚、上記本発明のAl線は熱圧着法だけではな
く、超音波接合法にあつても十分その使用に供し
得るものである。 上記銀(Ag)及び亜鉛(Zn)はその添加によ
り該Alの強度、表面張力を増大させるもので、
その含有量が1wt%Ag、0.5wt%Znではその実効
が少なく、銀は30wt%を越えると硬くなりすぎ
てボンデイング強度が低下する弊害を生じ、亜鉛
は15wt%を越えると硬くなりすぎるとともに耐
蝕性が低下してボンデイング強度が低下する弊害
を生ずる。従つて、銀、亜鉛の両元素を添加する
場合には、総含有量が30wt%以下であることが
好ましい。 以下に実施例を示す。 各試料はAl合金を溶解鋳造し、線引加工によ
り直径30μmmの極線ボンデイングAl線としたもの
である。 各試料の添加元素及びその含有量は次表(1)に示
す通りであつて、その試料No.1〜7は本発明の実
施品、No.8は1wt%Siを添加せる従来品である。
The present invention is for wire bonding used to connect chip electrodes of semiconductor devices and external leads.
Regarding Al wire. Conventionally, commonly used Au wires easily form intermetallic compounds with Al deposited as silicon chip electrodes, resulting in a significant decrease in bonding strength. Al wire is used. When this Al wire is of high purity, it is too soft to obtain sufficient ultrasonic bonding strength, so 1wt% silicon ( It is used with the addition of Si). However, since this Al wire is a chemically active metal, it is easily oxidized and is therefore unsuitable for thermocompression bonding, which involves bonding at high temperatures, and the bonding process has typically been carried out by ultrasonic bonding. Recently, by using an inert gas atmosphere such as argon gas, it has become possible to use the thermocompression bonding method for Al wires in the same way as for Au wires. However, as mentioned above, the conventionally used Al wire is made of high-purity (99.9% or higher) Al containing 1wt% silicon, but when this Al wire is bonded by thermocompression, the shape of the Al ball changes. Not only was it unstable, but it also had problems with poor bonding performance, such as poor crystal refinement, too low adhesive strength, and insufficient mechanical strength to use a high-speed bonder. The purpose of the present invention is to solve the problems of conventional Al wires by incorporating predetermined additive elements, and to improve the bonding performance by thermocompression bonding. Purity Al, 1~30wt%Ag, and 0.5~15wt
%Zn. The Al wire of the present invention can be used not only for thermocompression bonding but also for ultrasonic bonding. The addition of silver (Ag) and zinc (Zn) increases the strength and surface tension of the Al.
If the content is 1wt%Ag or 0.5wt%Zn, its effectiveness will be small; if the content exceeds 30wt%, silver will become too hard and the bonding strength will decrease, and if zinc content exceeds 15wt%, it will become too hard and corrosion resistant. This results in the disadvantage that the bonding strength decreases due to the decrease in the bonding strength. Therefore, when both elements, silver and zinc, are added, the total content is preferably 30 wt% or less. Examples are shown below. Each sample was made by melting and casting an Al alloy and drawing it into a polar wire bonding Al wire with a diameter of 30 μmm. The additive elements and their contents in each sample are as shown in the following table (1). Samples No. 1 to 7 are products according to the present invention, and No. 8 is a conventional product to which 1wt% Si is added. .

【表】【table】

【表】 上記各試料をもつて機械的性質、Alボールの
形状を測定した結果を表(2)に示す。
[Table] Table (2) shows the results of measuring the mechanical properties and shape of the Al ball using each of the above samples.

【表】 上記表から知られるように本発明実施品のAl
線は従来Al線に較べて引張強さが改善されるの
で線引加工中に断線したり、ボンデイング作業中
に断線を起したりすることがないとともにAlボ
ールの形状が球状に安定することによつてボンデ
イング後の引張強さが高く接着強度が改善される
など熱圧着法を使用する際のボンデイング性能が
向上する。 又、引張強さが向上するので、従来の超音波接
合法を利用しても断線等の不具合がなく有益であ
る。
[Table] As is known from the above table, Al of the product implementing the present invention
The wire has improved tensile strength compared to conventional Al wire, so there is no breakage during wire drawing or bonding, and the Al ball has a stable spherical shape. Therefore, the bonding performance when using the thermocompression bonding method is improved, such as the tensile strength after bonding being high and the adhesive strength being improved. Furthermore, since the tensile strength is improved, even if conventional ultrasonic bonding methods are used, there are no problems such as wire breakage, which is advantageous.

Claims (1)

【特許請求の範囲】[Claims] 1 高純度のAlに、1〜30wt%の銀(Ag)およ
び0.5〜15wt%の亜鉛(Zn)の群より選択された
少なくとも1元素を含有せしめた半導体素子のボ
ンデイング用Al線。
1. An Al wire for bonding semiconductor devices, which contains high-purity Al and at least one element selected from the group consisting of 1 to 30 wt% silver (Ag) and 0.5 to 15 wt% zinc (Zn).
JP56187331A 1981-11-20 1981-11-20 Al wire for bonding of semiconductor element Granted JPS5887840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187331A JPS5887840A (en) 1981-11-20 1981-11-20 Al wire for bonding of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187331A JPS5887840A (en) 1981-11-20 1981-11-20 Al wire for bonding of semiconductor element

Publications (2)

Publication Number Publication Date
JPS5887840A JPS5887840A (en) 1983-05-25
JPS645459B2 true JPS645459B2 (en) 1989-01-30

Family

ID=16204124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187331A Granted JPS5887840A (en) 1981-11-20 1981-11-20 Al wire for bonding of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5887840A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350337A (en) * 1986-08-19 1988-03-03 Hiromi Kaneda Production of laminated glass sandwiching alumina ceramic paper

Also Published As

Publication number Publication date
JPS5887840A (en) 1983-05-25

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