JPS649242B2 - - Google Patents
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- Publication number
- JPS649242B2 JPS649242B2 JP57085682A JP8568282A JPS649242B2 JP S649242 B2 JPS649242 B2 JP S649242B2 JP 57085682 A JP57085682 A JP 57085682A JP 8568282 A JP8568282 A JP 8568282A JP S649242 B2 JPS649242 B2 JP S649242B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- carbon
- sintering
- sic
- sic powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000000843 powder Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052799 carbon Inorganic materials 0.000 claims description 24
- 238000005245 sintering Methods 0.000 claims description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 239000000178 monomer Substances 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- 229920002554 vinyl polymer Polymers 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 4
- 229920001688 coating polymer Polymers 0.000 claims description 3
- 239000012736 aqueous medium Substances 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000010000 carbonizing Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 32
- 229910010271 silicon carbide Inorganic materials 0.000 description 32
- 238000000034 method Methods 0.000 description 7
- 238000006116 polymerization reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 239000003505 polymerization initiator Substances 0.000 description 5
- 238000001272 pressureless sintering Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- CCTFAOUOYLVUFG-UHFFFAOYSA-N 2-(1-amino-1-imino-2-methylpropan-2-yl)azo-2-methylpropanimidamide Chemical compound NC(=N)C(C)(C)N=NC(C)(C)C(N)=N CCTFAOUOYLVUFG-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Description
本発明は、均一に炭素を分散させた炭化珪素粉
末の新規な製造法。
近年、省エネルギーおよび省資源の立場から、
高温構造材料としてのセラミツクスが注目されて
いる。
中でも窒化珪素とともに、炭化珪素が最も有望
な材料として期待されている。
通常、炭素珪素焼結体はホツトプレス法、常圧
焼結法、化学的蒸着などによつて作製される。
これらの中で、一般的に成形に用いられている
比較的簡単な方法で複雑及び大寸法のものを作製
できる、という点から常圧焼結法が工業的に最も
有利な方法と考えられる。
しかし、炭化珪素は共有結合性の強い化合物で
あるため、常圧焼結においても単独では焼結せ
ず、焼結助剤の添加が必要となる。この焼結助剤
としては、炭素が効果的であり、更にホウ素ある
いはアルミニウム等が一般的である。
しかも、これらの焼結助剤を用いても、普通の
方法では焼結助剤が粒子表面に均一に分散し難い
ため、焼結後、焼結体の組織が不均一になり、従
つて強度があまり上がらない。
ホウ素やアルミニウムなどは、添加時に均一に
分散されていなくても、焼結中に拡散しやすく結
果的には添加時の分散性はあまり問題にならない
が、炭素は焼結によつてあまり拡散せず、従つて
焼結前の粒子に対する炭素の分散性が問題とな
る。
本発明者らは、炭素をいかにSiC粒子中に均一
に分散させるかについて鋭意検討を重ね、ポリマ
ーによる表面被覆(以下マイクロカプセル化とい
う)の技術を応用し、SiC粒子に炭素を均一にコ
ーテイングすることにより、炭素を非常に均一に
含有するSiC粉末を得ることに成功し、この粉末
を焼結することにより強度の大きい、すぐれた焼
結体を得るに至つたものである。
かかる手段により、含有する炭素量は従来法に
おける焼結の場合よりも少量でよく、かつ均一な
組織ができるため、曲げ強度も向上するものであ
る。
本発明においては、焼結助剤として、更に、ホ
ウ素あるいはアルミニウム等を加える場合に、予
めこれら焼結助剤を加えたSiC粉末をマイクロカ
プセル化するか、あるいは炭素コーテイングSiC
粉末を得て、これに、これら焼結助剤を加えるか
のいずれも可能であり、良好な焼結体を得ること
ができる。
次に、本発明におけるマイクロカプセル化によ
るSiC粉末の炭素のコーテイングについて詳述す
る。
SiC粉末をラジカル重合またはラジカル共重合
し得るビニル性単量体とともに水性媒体中に分散
させ重合開始剤を添加して重合反応をおこない、
SiC粉末表面に均一にポリマーを被覆させる。こ
こで重合反応に使用されるビニル性単量体として
はラジカル重合もしくはラジカル共重合するもの
であればよく、例えば、アクリル酸、メタクリル
酸、アクリル酸塩、メタクリル酸エステル、アク
リロニトリル、N―メチロールアクリルアミド、
塩化ビニル、酢酸ビニル、スチレン、ジビニルベ
ンゼン、フツ化ビニリデンなどが挙げられる。
重合開始剤としては、二酸化硫黄、亜硫酸水溶
液、過硫酸カリウム、アゾビスシアノ吉草酸、V
―50〔2,2′―アゾビス―(2―アミノジノプロ
パン)―ジハイドロクロライド,和光純薬製〕な
どが用いられる。
この重合反応を好適に実施するには、水100重
量部中に有機溶媒1〜100重量部または界面活性
剤1〜50重量部、SiC粉末1〜100重量部をビニ
ル性単量体0.1〜100重量部を加え、よく撹拌分散
させ、このようにして得られた懸濁液に前記重合
開始剤を添加してよく撹拌する。重合開始剤の添
加量はビニル性単量体に対し0.01〜20重量%で十
分である。反応温度は常温で十分可能であるが、
重合時間を短縮したい場合には約70℃程度まで加
熱すればよく、1〜5時間程度の短い時間で高い
重合率を得ることができる。
重合反応終了後、スラリー状のSiC粉末を濾別
し、水洗して残留分を乾燥する。このような方法
で得られるSiC粉末のポリマー被覆組成物は、任
意の樹脂量で被覆でき反応条件の制御も容易であ
る。
このようにして得られたポリマー被覆SiC粉末
を空気中で250℃以下4〜40時間加熱処理したの
ち、非酸化性雰囲気で800〜1300℃、2〜10時間
焼成することによつて被覆ポリマーが完全に炭化
でき、炭素で均一にコーテイングされたSiC粉末
が得られる。
如上のようにして炭素を均一に含有するSiC粉
末が得られるが、前述の如くSiC粉末のマイクロ
カプセル化処理の前にアルミ、ホウ素等の他の焼
結助剤を共存させる場合には、SiCとともにこれ
ら焼結助剤もポリマーで均一に被覆されて、上記
焼成処理において、SiCとこれら焼結助剤に炭素
が均一にコーテイングした混合粉末が得られるも
のである。
また、均一に炭素をコーテイングしたSiC粉末
に他の焼結助剤として、アルミ、ホウ素を添加す
る場合にも、通常の撹拌混合で十分に均一化され
るものである。
本発明は、このようにSiC粉末に焼結助剤であ
る炭素やアルミ、ホウ素等の他の焼結助剤を均一
に分散できるため、これらの粉末をもとに成形、
焼結することによつて従来にない堅固で均一な焼
結体が得られるものである。成形焼結するために
は従来おこなわれている一般的な押出、乾式プレ
ス、射出成形等によつて成形され、真空中、CO
ガス雰囲気中、不活性ガス雰囲気中で1900℃以上
に加熱することにより実施できる。
本発明によるSiC粉末は従来均一に含有させる
ことが困難であつた焼結助剤である炭素が均一コ
ーテイングされているため、常圧焼結によつても
十分強度の高い焼結体が得られるものである。
本発明においては、SiC粉末にコーテイングさ
れる炭素量が5%以下になるように被覆ポリマー
の含有割合を設定してマイクロカプセル化をおこ
なうことが好ましい。
なお、炭素量が5%を超えると、焼結したとき
遊離の炭素として焼結性、成形性に悪影響を与え
るため好ましくない。
以下、本発明を実施例にもとづいて更に詳細に
説明する。
実施例 1
60℃の恒温槽に500ml容量の三ツ口フラスコを
浸漬し、水250mlとSiC粉末(β―SiC,SiC=99
%以上,比表面積13.2m2/g)50g、アクリロニ
トリル5gを入れ、撹拌混合しながら、4%V−
50〔2,2′―アゾビス―(2―アミジノプロパン)
―ジハイドロクロライド〕水溶液50mlを添加し
て、重合反応を行なつた。この時、同時にホウ素
もSiC粉末に対して1重量%になるように添加し
た。反応時間は3hrに設定した。
反応後、生成物を濾別し、水で十分に洗浄した
後、80℃で真空乾燥した。この時の付着したポリ
アクリロニトリルの含有率はSiC粉末に対して4.5
重量%であつた。
その後、1000℃、3hr、Ar中で加熱処理を行な
つて付着したアクリロニトリルをほぼ炭化させ
た。その時の含有率は1.9重量%である。この粉
末に1重量%のポリエチレングリコールを混合、
成形した後、Arガス雰囲気中2000℃にて焼結を
行ない、理論密度の93%の焼結体を得た。
このものの常温における3点曲げ強度を測定し
たところ、60Kg/mm2という高い値を得た。
実施例 2〜6
マイクロカプセル化の際の各原料及びその調合
条件、焼結に必要なホウ素の添加量を変化させた
以外は、まつたく実施例1と同様の操作を行なつ
た。それらの条件及び密度、曲げ強度を表1に示
す。
The present invention is a novel method for producing silicon carbide powder in which carbon is uniformly dispersed. In recent years, from the standpoint of energy and resource conservation,
Ceramics are attracting attention as high-temperature structural materials. Among them, silicon carbide is expected to be the most promising material along with silicon nitride. Usually, carbon-silicon sintered bodies are produced by hot pressing, pressureless sintering, chemical vapor deposition, or the like. Among these, the pressureless sintering method is considered to be the most industrially advantageous method because it is a relatively simple method commonly used for molding, and can produce complex and large-sized products. However, since silicon carbide is a compound with strong covalent bonding properties, it cannot be sintered alone even in normal pressure sintering, and it is necessary to add a sintering aid. Carbon is effective as this sintering aid, and boron, aluminum, etc. are also commonly used. Moreover, even if these sintering aids are used, it is difficult to uniformly disperse the sintering aids on the particle surface using normal methods, so the structure of the sintered body becomes uneven after sintering, resulting in poor strength. does not rise much. Boron, aluminum, etc. are easily diffused during sintering even if they are not uniformly dispersed when added, and as a result, the dispersibility during addition is not much of a problem, but carbon does not diffuse much during sintering. First, therefore, the dispersibility of carbon in particles before sintering becomes a problem. The present inventors have conducted extensive studies on how to uniformly disperse carbon in SiC particles, and applied the technique of surface coating with polymers (hereinafter referred to as microencapsulation) to uniformly coat carbon onto SiC particles. As a result, they succeeded in obtaining SiC powder containing carbon very uniformly, and by sintering this powder, they were able to obtain an excellent sintered body with high strength. By such means, the amount of carbon contained can be smaller than in the case of sintering in the conventional method, and a uniform structure can be formed, so that the bending strength is also improved. In the present invention, when boron or aluminum is further added as a sintering aid, SiC powder to which these sintering aids have been added is microencapsulated, or carbon-coated SiC
It is also possible to obtain a powder and add these sintering aids to it, and a good sintered body can be obtained. Next, carbon coating of SiC powder by microencapsulation in the present invention will be described in detail. SiC powder is dispersed in an aqueous medium together with a vinyl monomer capable of radical polymerization or radical copolymerization, and a polymerization initiator is added to perform a polymerization reaction.
Coat the polymer uniformly on the SiC powder surface. The vinyl monomer used in the polymerization reaction may be one that undergoes radical polymerization or radical copolymerization, such as acrylic acid, methacrylic acid, acrylate, methacrylic ester, acrylonitrile, N-methylolacrylamide, etc. ,
Examples include vinyl chloride, vinyl acetate, styrene, divinylbenzene, and vinylidene fluoride. As a polymerization initiator, sulfur dioxide, sulfite aqueous solution, potassium persulfate, azobiscyanovaleric acid, V
-50 [2,2'-azobis-(2-aminodinopropane)-dihydrochloride, manufactured by Wako Pure Chemical Industries], etc. are used. To suitably carry out this polymerization reaction, 1 to 100 parts by weight of an organic solvent or 1 to 50 parts by weight of a surfactant, and 1 to 100 parts by weight of SiC powder are added to 100 parts by weight of water, and 0.1 to 100 parts by weight of a vinyl monomer. The polymerization initiator is added to the suspension thus obtained, and the polymerization initiator is added and stirred thoroughly. It is sufficient that the amount of the polymerization initiator added is 0.01 to 20% by weight based on the vinyl monomer. Although the reaction temperature is sufficient at room temperature,
When it is desired to shorten the polymerization time, it is sufficient to heat the polymer to about 70°C, and a high polymerization rate can be obtained in a short time of about 1 to 5 hours. After the polymerization reaction is completed, the slurry-like SiC powder is filtered, washed with water, and the residue is dried. The polymer coating composition for SiC powder obtained by such a method can be coated with any amount of resin, and the reaction conditions can be easily controlled. The thus obtained polymer-coated SiC powder is heat-treated in air at 250°C for 4 to 40 hours, and then baked in a non-oxidizing atmosphere at 800 to 1300°C for 2 to 10 hours to remove the coating polymer. Complete carbonization results in SiC powder that is uniformly coated with carbon. SiC powder containing carbon uniformly can be obtained as described above, but if other sintering aids such as aluminum and boron are coexisting before the microencapsulation treatment of SiC powder as described above, SiC At the same time, these sintering aids are also uniformly coated with the polymer, and in the above firing process, a mixed powder in which SiC and these sintering aids are uniformly coated with carbon is obtained. Further, when aluminum and boron are added as other sintering aids to SiC powder uniformly coated with carbon, the mixture can be sufficiently uniformized by ordinary stirring and mixing. In this way, the present invention can uniformly disperse other sintering aids such as carbon, aluminum, and boron in the SiC powder, so it can be molded and molded based on these powders.
By sintering, it is possible to obtain a sintered body that is harder and more uniform than ever before. In order to mold and sinter, it is molded by conventional extrusion, dry pressing, injection molding, etc., and is molded in a vacuum or with CO2.
This can be carried out by heating to 1900°C or higher in a gas atmosphere or an inert gas atmosphere. Since the SiC powder according to the present invention is uniformly coated with carbon, which is a sintering aid that was difficult to contain uniformly in the past, a sintered body with sufficiently high strength can be obtained even by pressureless sintering. It is something. In the present invention, it is preferable to perform microencapsulation by setting the content ratio of the coating polymer so that the amount of carbon coated on the SiC powder is 5% or less. It should be noted that if the carbon content exceeds 5%, it is not preferable because it becomes free carbon when sintered and adversely affects sinterability and formability. Hereinafter, the present invention will be explained in more detail based on examples. Example 1 A 500 ml three-necked flask was immersed in a constant temperature bath at 60°C, and 250 ml of water and SiC powder (β-SiC, SiC = 99
% or more, specific surface area 13.2 m 2 /g), and 5 g of acrylonitrile, and while stirring and mixing, 4% V-
50 [2,2′-azobis-(2-amidinopropane)
-dihydrochloride] 50 ml of an aqueous solution was added to carry out a polymerization reaction. At this time, boron was also added in an amount of 1% by weight based on the SiC powder. The reaction time was set to 3 hr. After the reaction, the product was filtered, thoroughly washed with water, and then vacuum dried at 80°C. The content of polyacrylonitrile adhered at this time was 4.5 to the SiC powder.
It was in weight%. Thereafter, heat treatment was performed in Ar at 1000°C for 3 hours to almost carbonize the attached acrylonitrile. The content at that time was 1.9% by weight. Mix 1% by weight of polyethylene glycol with this powder,
After shaping, sintering was performed at 2000°C in an Ar gas atmosphere to obtain a sintered body with a theoretical density of 93%. When the three-point bending strength of this product was measured at room temperature, a high value of 60 Kg/mm 2 was obtained. Examples 2 to 6 The same operations as in Example 1 were performed, except that the raw materials used for microencapsulation, their preparation conditions, and the amount of boron added required for sintering were changed. Table 1 shows the conditions, density, and bending strength.
【表】
実施例 7
マイクロカプセル化の際、ホウ素を加えずに、
SiC粉末のみをマイクロカプセル化する以外は実
施例1と同一条件にて、炭素含有率2.0重量%の
炭素コーテイングSiC粉末を得た。この粉末に対
してホウ素を1重量%になるよう加え、混合撹拌
して混合粉末を得た。この混合粉末に1重量%の
エチレングリコールを混合、成形した後、Arガ
ス雰囲気中2000℃にて常圧焼結をおこない、理論
密度の92%の焼結体を得た。
また、曲げ強度は59Kg/mm2であつた。
比較例 1,2
炭化珪素粉末(β―SiC,SiC=99%以上、比
表面13.2m2/g)100gに炭素1g、ホウ素1g
を添加(比較例1)、及び炭素0.5g、ホウ素0.5
gを添加(比較例2)の2種類の試料をそれぞれ
プラスチツク製ボールミルにてヘキサン中で湿式
混合した。その後乾燥させ、バインダーとしてフ
エノールホルムアルデヒド樹脂と混合、成形し、
脱脂後2000℃にて常圧焼結をおこなつた。得られ
た焼結体の理論密度に対する比、及び曲げ強度
は、それぞれ比較例1のものが95%、50Kg/mm2、
比較例2のものが87%、43Kg/mm2であつた。[Table] Example 7 During microencapsulation, without adding boron,
Carbon-coated SiC powder with a carbon content of 2.0% by weight was obtained under the same conditions as in Example 1 except that only the SiC powder was microencapsulated. Boron was added to this powder to give a concentration of 1% by weight, and mixed and stirred to obtain a mixed powder. This mixed powder was mixed with 1% by weight of ethylene glycol and molded, followed by pressureless sintering at 2000°C in an Ar gas atmosphere to obtain a sintered body with a theoretical density of 92%. Moreover, the bending strength was 59Kg/mm 2 . Comparative Examples 1, 2 100 g of silicon carbide powder (β-SiC, SiC = 99% or more, specific surface 13.2 m 2 /g) 1 g of carbon, 1 g of boron
(Comparative Example 1), carbon 0.5g, boron 0.5
(Comparative Example 2) were wet-mixed in hexane in a plastic ball mill. After that, it is dried, mixed with phenol formaldehyde resin as a binder, and molded.
After degreasing, pressureless sintering was performed at 2000℃. The ratio of the obtained sintered body to the theoretical density and the bending strength of Comparative Example 1 were 95%, 50Kg/mm 2 , and 50Kg/mm 2 , respectively.
The weight of Comparative Example 2 was 87%, 43 Kg/mm 2 .
Claims (1)
ビニル性単量体とSiC粉末またはこれにホウ素、
アルミ等の焼結助剤を加えた混合粉末を水性媒体
中に分散せしめ重合をおこない、粉末をポリマー
被覆し、空気中250℃以下で加熱処理したのち600
〜1300℃、非酸化性雰囲気で焼成することにより
被覆ポリマーを炭化させることを特徴とする炭素
含有SiC粉末の製造法。1 A radical polymerizable or radical copolymerizable vinyl monomer and SiC powder, or boron,
A mixed powder containing a sintering aid such as aluminum is dispersed in an aqueous medium and polymerized. The powder is coated with a polymer and heated in air at a temperature below 250°C.
A method for producing carbon-containing SiC powder, which comprises carbonizing a coating polymer by firing at ~1300°C in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085682A JPS58204812A (en) | 1982-05-22 | 1982-05-22 | Preparation of carbon-containing sic powder and sintered material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085682A JPS58204812A (en) | 1982-05-22 | 1982-05-22 | Preparation of carbon-containing sic powder and sintered material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58204812A JPS58204812A (en) | 1983-11-29 |
| JPS649242B2 true JPS649242B2 (en) | 1989-02-16 |
Family
ID=13865610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57085682A Granted JPS58204812A (en) | 1982-05-22 | 1982-05-22 | Preparation of carbon-containing sic powder and sintered material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58204812A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5080879A (en) * | 1988-12-01 | 1992-01-14 | Alcan International Limited | Process for producing silicon carbide platelets and the platelets so produced |
| US5087592A (en) * | 1990-05-25 | 1992-02-11 | Alcan International Limited | Method of producing platelets of borides of refractory metals |
| US5173283A (en) * | 1990-10-01 | 1992-12-22 | Alcan International Limited | Platelets for producing silicon carbide platelets and the platelets so-produced |
| JP2009269787A (en) * | 2008-05-07 | 2009-11-19 | Bridgestone Corp | Method for producing silicon carbide powder |
-
1982
- 1982-05-22 JP JP57085682A patent/JPS58204812A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58204812A (en) | 1983-11-29 |
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