JPS649700B2 - - Google Patents
Info
- Publication number
- JPS649700B2 JPS649700B2 JP542782A JP542782A JPS649700B2 JP S649700 B2 JPS649700 B2 JP S649700B2 JP 542782 A JP542782 A JP 542782A JP 542782 A JP542782 A JP 542782A JP S649700 B2 JPS649700 B2 JP S649700B2
- Authority
- JP
- Japan
- Prior art keywords
- getter
- getter device
- boron oxide
- solution
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 64
- 229910052810 boron oxide Inorganic materials 0.000 claims description 61
- 239000000243 solution Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 47
- 230000003647 oxidation Effects 0.000 claims description 39
- 238000007254 oxidation reaction Methods 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 150000002148 esters Chemical class 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 24
- 229910052788 barium Inorganic materials 0.000 description 15
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000002360 explosive Substances 0.000 description 13
- 239000000843 powder Substances 0.000 description 11
- 229910000838 Al alloy Inorganic materials 0.000 description 9
- 238000011010 flushing procedure Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- -1 polysiloxanes Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004584 weight gain Effects 0.000 description 2
- 235000019786 weight gain Nutrition 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- COHCXWLRUISKOO-UHFFFAOYSA-N [AlH3].[Ba] Chemical compound [AlH3].[Ba] COHCXWLRUISKOO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/183—Composition or manufacture of getters
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Description
【発明の詳細な説明】
発明の技術分野
本発明は受信管、X線管、陰極線管等の電子管
内残留ガスを吸着する蒸発性の耐酸化性ゲツタ装
置の製造方法に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for manufacturing an evaporative, oxidation-resistant getter device that adsorbs residual gas in an electron tube such as a receiving tube, an X-ray tube, or a cathode ray tube.
発明の技術的背景とその問題点
ゲツタ装置を大別すると、電子管等の真空領域
内でバリウムを蒸発して得られた薄膜に残留ガス
を吸着させる蒸発型ゲツタ装置と、チタン、ジル
コニウム、タンタル等を真空領域内に配置してゲ
ツタ作用を行わせる非蒸発型ゲツタ装置とに分け
られる。このうち蒸発型ゲツタ装置の蒸発物質即
ち残留ガスを吸着する物質としてはバリウムが広
く用いられているが、これは大気中で容易に酸化
するためバリウム―アルミニウム(以下Ba―Al
と称する)合金とし、これを粉末化してゲツタ材
としている。さらに主に用いられるゲツタ装置と
してはBa―Al合金粉末にニツケル粉末の反応添
加材(還元性金属)の粉末を混合して導通性容器
に充填したものである。これは、ゲツタ装置が加
熱されるとBa―Al合金粉末中のアルミニウムと
ニツケル粉末(反応添加材)とが反応を起こし、
その反応熱によつてバリウムの蒸発が容易にな
る。上記のゲツタ装置は高周波加熱などにより加
熱しバリウムのゲツタ膜を真空容器内壁に形成す
る。Technical background of the invention and its problems Getter devices can be roughly divided into evaporative getter devices that adsorb residual gas on a thin film obtained by evaporating barium in the vacuum region of an electron tube, etc., and getter devices that use titanium, zirconium, tantalum, etc. There are two types of getter devices: a non-evaporable getter device, which is placed in a vacuum region to perform a getter action. Of these, barium is widely used as a substance that adsorbs evaporated substances, that is, residual gas, in evaporative getter devices, but barium-aluminum (hereinafter referred to as Ba-Al) is easily oxidized in the atmosphere.
) is made into a powder and used as a getter material. Furthermore, the getter device that is mainly used is one in which a reaction additive (reducing metal) powder such as nickel powder is mixed with Ba-Al alloy powder and the mixture is filled into a conductive container. This is because when the getter device is heated, the aluminum in the Ba-Al alloy powder reacts with the nickel powder (reactive additive).
The heat of reaction facilitates the evaporation of barium. The above-mentioned getter device heats by high-frequency heating or the like to form a getter film of barium on the inner wall of the vacuum chamber.
しかし乍らゲツタ装置を蒸発させる以前に、ゲ
ツタ装置が不所望な加熱をしばしば受け、ゲツタ
材のうち主としてニツケルが酸化されて、ゲツタ
膜を形成する上で支障となる場合がある。また、
陰極線管を小型化し省電力型とするためにネツク
径を小さくし、ゲツタ装置の機能を十分に働らか
すためにゲツタ装置の形状が大きくする場合には
ネツク部から挿入するのが困難となつた。その上
ゲツタ装置を電子銃から電気的に切り離し、不所
望なサージ電流がゲツタ装置―電子銃間に流れる
ことを防止するためにもフアンネルのネツク部か
らゲツタ装置を挿入しない方が良いことが確認さ
れている。 However, before the getter device is evaporated, the getter device is often subjected to undesired heating, and the getter material, mainly nickel, may be oxidized, which may interfere with the formation of the getter film. Also,
In order to make cathode ray tubes smaller and more energy efficient, the diameter of the net is made smaller, and in order to make the getter device function more fully, the shape of the getter device is made larger, making it difficult to insert it through the neck. Ta. Furthermore, it has been confirmed that it is better not to insert the getter device through the funnel neck in order to electrically disconnect the getter device from the electron gun and prevent undesired surge current from flowing between the getter device and the electron gun. has been done.
たとえば、英国特許第1226728号明細書に開示
されているような場合である。この開示例によれ
ば、陰極線管を構成するパネル部とフアンネル部
とがフリツトガラスにより封着される前にゲツタ
装置が内部に取り付けられる。その後、大気中で
フリツトガラスをフアンネルとパネルとの封着部
に塗布し、450℃で1時間高温処理を行なつて封
着を完了させる。この際、Ba―Al合金粉末とニ
ツケル粉末との混合粉末が充填されたゲツタ装置
は、上記封着工程時の大気中450℃の1時間の高
温処理中に酸化して、主として酸化ニツケル(以
下NiOと称する)を生じる。NiOがゲツタ装置中
に存在すると、NiOとBa―Al合金粉末とが高温
時に急激な反応を生じゲツタ装置を加熱してバリ
ウムを蒸発させる(以下ゲツタフラツシユと称す
る)際に、爆発的なバリウムの飛散という結果を
もたらす。NiOの生成量が多量の場合、金属容器
そのものまでが溶断されてゲツタ材と共に爆発的
な飛散をもたらす危険性がある。たとえばカラー
テレビジヨン用陰極線管において、この種の爆発
的飛散は耐圧不良等の原因となり管機能を損うの
で絶対に避けなければならない。以上の理由から
大気中で高温に曝されても何ら障害を生じないゲ
ツタ装置が求められている。このような目的で表
面に有機シランを被覆したゲツタ装置が特開昭52
―84960号公報に、また酸化シリコンを被覆した
ゲツタ装置が特開昭52―139355号公報に開示され
ている。そして、ホウ素酸化物を被覆したゲツタ
装置が特開昭56―61736号公報に開示されている。 For example, this is the case as disclosed in British Patent No. 1226728. According to this disclosed example, the getter device is installed inside the cathode ray tube before the panel portion and the funnel portion that constitute the cathode ray tube are sealed together with frit glass. Thereafter, fritted glass is applied to the sealed portion between the funnel and the panel in the atmosphere, and a high temperature treatment is performed at 450° C. for 1 hour to complete the sealing. At this time, the getter device filled with a mixed powder of Ba-Al alloy powder and nickel powder is oxidized during the high temperature treatment at 450°C for 1 hour in the atmosphere during the above sealing process, and is mainly made of nickel oxide (hereinafter referred to as (referred to as NiO). If NiO is present in the getter device, NiO and the Ba-Al alloy powder will react rapidly at high temperatures, resulting in explosive barium scattering when the getter device is heated to evaporate barium (hereinafter referred to as getter flash). This brings about the result. If a large amount of NiO is produced, there is a risk that the metal container itself will be fused and exploded together with the getter material. For example, in cathode ray tubes for color television, this type of explosive scattering must be avoided at all costs, as it causes poor pressure resistance and impairs tube function. For the above reasons, there is a need for a getter device that does not cause any trouble even when exposed to high temperatures in the atmosphere. For this purpose, a getter device whose surface was coated with organic silane was published in JP-A-52
A getter device coated with silicon oxide is disclosed in Japanese Patent Laid-Open No. 139355-1984. A getter device coated with boron oxide is disclosed in JP-A-56-61736.
特開昭52―84960号公報によれば、アルキル、
アリール、アラルキル、アルカリールおよび水素
を含むポリシロキサンなどの有機シランにより被
覆されたゲツタ装置が空気中420℃で1時間の加
熱に耐え、爆発的な飛散を呈することなくバリウ
ムを蒸発せしめ得ることが示されている。しかし
ながら、このような有機シランにより被覆された
ゲツタ装置でゲツタフラツシユを行なつた際、有
機シランから主として炭化水素系の気体が多量に
放出され、これらの気体はゲツタ膜に容易に吸着
されず、ゲツタフラツシユ後しばらくの間管内圧
力が10-3Torr程度に放置されるという問題が生
じる。このような多量の残留ガスは、テレビ用陰
極線管内等の高電圧で負荷された空間内ではイオ
ン化され、加速されて陰極あるいは陽極に衝突し
スパツタリング現象をおこす。このスパツタリン
グ現象により陰極上の電子放射性物質の一部が他
の好ましくない箇所に飛着し耐圧特性を著しく劣
化させたり、或は陽極側でいわゆるイオンスポツ
トを生ずる。 According to Japanese Patent Application Laid-Open No. 52-84960, alkyl,
It has been demonstrated that Getta devices coated with organic silanes such as aryl, aralkyl, alkaryl, and hydrogen-containing polysiloxanes can withstand heating in air at 420°C for 1 hour and evaporate barium without exhibiting explosive scattering. It is shown. However, when a getter flash is performed using a getter device coated with such an organic silane, a large amount of mainly hydrocarbon-based gases are released from the organic silane, and these gases are not easily adsorbed by the getter film, and the getter flash is A problem arises in that the pressure inside the pipe remains at around 10 -3 Torr for a while. Such a large amount of residual gas is ionized in a space loaded with high voltage, such as in a cathode ray tube for a television, and is accelerated and collides with the cathode or anode, causing a sputtering phenomenon. Due to this sputtering phenomenon, a part of the electron-emitting substance on the cathode flies to other undesirable locations, significantly deteriorating the withstand voltage characteristics, or causing so-called ion spots on the anode side.
また、特開昭52―139355号公報に示された酸化
シリコン層により被覆されたゲツタ装置は、高温
酸化に対しかなりの保護効果を示す。即ち、前記
ゲツタ装置を大気中で加熱後ゲツタフラツシユし
た場合、爆発的飛散の程度はかなり改善された
が、少量のゲツタ材の脱落と一部焼結したゲツタ
材の容器外への浮き上りが認められた。 Also, a getter device coated with a silicon oxide layer as shown in Japanese Patent Application Laid-Open No. 52-139355 exhibits considerable protection against high temperature oxidation. That is, when the getter device was heated in the atmosphere and then flashed, the degree of explosive scattering was considerably improved, but a small amount of getter material fell off and some sintered getter material floated outside the container. It was done.
しかし乍ら陰極線管等の電子管の耐圧特性の劣
化防止のため、軽度にせよゲツタフラツシユ時の
爆発的飛散とゲツタ材の浮き上り及びゲツタ材の
脱落は完全に避ける必要がある。即ち、爆発的な
飛散は飛散粒子が管内の不所望な箇所へ飛着し、
耐圧特性の劣化のみならず回路の短絡をひき起こ
す場合がある。またゲツタの浮き上りはゲツタフ
ラツシユを行なつた際管内の不所望な箇所へバリ
ウム膜を形成せしめ、耐圧特性の劣化の原因とな
ると共に、ゲツタフラツシユ後、ゲツタ残留物が
管内に落下し、管内の塵芥のもととなり管機能を
著るしく損う。 However, in order to prevent deterioration of the voltage resistance characteristics of electron tubes such as cathode ray tubes, it is necessary to completely avoid explosive scattering, lifting of the getter material, and falling off of the getter material during getter flashing, even if it is slight. In other words, explosive scattering occurs when particles fly to undesired locations inside the pipe.
This may cause not only deterioration of withstand voltage characteristics but also a short circuit in the circuit. In addition, when the getter flush is carried out, the rising of the getter causes a barium film to be formed in undesired areas inside the pipe, causing deterioration of the pressure resistance characteristics.After the getter flushing, the getter residue falls into the pipe, causing dust in the pipe. This causes severe damage to pipe function.
さらに、酸化シリコン層で被覆したゲツタ装置
表面を電子顕微鏡を用いて観察したところ酸化シ
リコン層が多孔質な構造からなることが判明し
た。即ちこの細孔を通してゲツタ装置表面へ酸素
が供給され、ゲツタ材の一部、主にニツケル粉末
が酸化される。このゲツタ材中のニツケル粉末の
酸化が、軽度といえども爆発的な飛散を引き起す
原因と考えられる。 Further, when the surface of the getter device coated with the silicon oxide layer was observed using an electron microscope, it was found that the silicon oxide layer had a porous structure. That is, oxygen is supplied to the surface of the getter device through these pores, and a part of the getter material, mainly the nickel powder, is oxidized. The oxidation of the nickel powder in this getter material is thought to be the cause of the explosive scattering, even if it is mild.
また、特開昭56―61736号公報にはゲツタ中の
Ba―Al合金粉末とニツケル粉末とをホウ素酸化
物で被覆したゲツタ装置が開示されている。この
ホウ素酸化物をゲツタ装置に被覆するにあたり、
ホウ素酸化物を溶剤に溶かしたのち、浸漬、スプ
レー等によりゲツタ装置に被覆される。この際、
用いられる溶剤はアルコール類であつたが、例え
ばメチルアルコールなどはホウ素酸化物と反応
し、B(OCH3)3のような組成を持つた揮発性の
エステルを作る性質が認められる。アルコール
類、例えばメチルアルコール、エチルアルコー
ル、プロピールアルコール、ブチルアルコール等
を用いてホウ素酸化物を溶解すると、揮発性のエ
ステルが作られるため、ホウ素酸化物の濃度が時
間とともに変化し被覆量を一定にするのが難しい
という問題点があつた。すなわち、製造された耐
酸化性ゲツタ装置の被覆量が一定にならず変化す
るためNiO発生を防止する効果を十分発揮出来
ず、爆発的反応までは発生しないまでも、ゲツタ
材の浮き上り現象飛散量が一定せず、さらにゲツ
タフラツシユが開始するまでの時間が個々の場合
で異なるという問題点があつた。これらの欠点を
取り除くには、ゲツタ装置にホウ素酸化物を被覆
する際に溶剤のアルコール類に溶解させたホウ素
酸化物の量を測定し、溶解しているホウ素酸化物
の量を一定に保つようにおぎなう必要がある。し
かしながら、前述した様にアルコール類に溶解さ
せたホウ素酸化物はエステルを作り蒸発速度が非
常に早く溶解しているホウ素酸化物を一定に保つ
のは困難であるという問題が生じた。 Also, in Japanese Patent Application Laid-Open No. 56-61736,
A getter device is disclosed in which Ba--Al alloy powder and nickel powder are coated with boron oxide. In coating the getter device with this boron oxide,
After the boron oxide is dissolved in a solvent, it is coated on the getter device by dipping, spraying, or the like. On this occasion,
The solvent used was alcohol, and methyl alcohol, for example, has the property of reacting with boron oxide to form a volatile ester having a composition such as B(OCH 3 ) 3 . When boron oxide is dissolved using alcohols such as methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, etc., a volatile ester is created, so the concentration of boron oxide changes over time and the amount of coverage remains constant. The problem was that it was difficult to do so. In other words, because the coating amount of the manufactured oxidation-resistant getter device is not constant and varies, it cannot fully demonstrate the effect of preventing NiO generation, and even though an explosive reaction does not occur, the getter material lifts up and scatters. There were problems in that the amount was not constant and the time taken until the getta flush started differed in each case. To eliminate these drawbacks, measure the amount of boron oxide dissolved in the alcohol solvent when coating the getter device with boron oxide, and try to keep the amount of dissolved boron oxide constant. It is necessary to hold a candle. However, as mentioned above, boron oxide dissolved in alcohol forms ester, and the evaporation rate is very fast, making it difficult to keep the dissolved boron oxide constant.
この問題点を以下の様に詳細に説明する。第1
番目の方法としてメチルアルコールに10重量%の
ホウ素酸化物を溶解させてすぐにゲツタ装置を溶
液に浸漬し、大気中で150℃2時間電熱型乾燥器
を用い乾燥させ、真空中500℃で30分間加熱して
ゲツタ装置にホウ素酸化物を被覆させた。また第
2番目の方法として、10重量%のホウ素酸化物を
メチルアルコール溶解させてから6時間放置した
溶液を用いて第1番目の方法と同じ工程を用いて
ゲツタ装置にホウ素酸化物を被覆させた。第1番
目の方法で製造されたゲツタ装置はゲツタフラシ
ユさせると浮き上り現象もなく、ゲツタ装置とし
て良好な特性を示したのに対し第2番目の方法で
製造されたゲツタ装置を第1番目と同じ条件にて
ゲツタフラツシユさせたところ、浮き上り現象が
生じた。これは、溶液中のホウ素酸化物がメチル
アルコールと反応しB(OCH3)3のようなエステ
ルを生成し、ゲツタ装置に被覆するホウ素酸化物
の量が減少すると推定され、また溶解しているホ
ウ素酸化物を一定に保つのは困難であることを示
している。また、ホウ素酸化物を溶解する溶剤に
水を用いると、水はゲツタ材中のBa―Al合金粉
末の酸化の原因ともなり水を溶剤として用いるこ
とは不可能であることが確認された。 This problem will be explained in detail as follows. 1st
The second method is to dissolve 10% by weight of boron oxide in methyl alcohol, immediately immerse the getter device in the solution, dry it in the air at 150℃ for 2 hours using an electric dryer, and then dry it in a vacuum at 500℃ for 30 minutes. The getter device was coated with boron oxide by heating for a minute. As a second method, the getter device is coated with boron oxide using the same process as the first method, using a solution in which 10% by weight of boron oxide is dissolved in methyl alcohol and left for 6 hours. Ta. The getter device manufactured by the first method exhibited good characteristics as a getter device without any lifting phenomenon when flushed, whereas the getter device manufactured by the second method was the same as the first method. When the material was flushed under certain conditions, a floating phenomenon occurred. This is because boron oxide in the solution reacts with methyl alcohol to produce esters such as B( OCH3 ) 3 , which reduces the amount of boron oxide coated on the getter device, and also reduces the amount of boron oxide that is dissolved. This shows that it is difficult to keep boron oxide constant. Furthermore, it was confirmed that when water is used as a solvent to dissolve boron oxide, water causes oxidation of the Ba-Al alloy powder in the getter material, making it impossible to use water as a solvent.
発明の目的
本発明の目的は、以上の点に鑑みてなされたも
ので耐高温酸化性を有し、かつその使用に際して
も何ら障害を伴うことのない高品位のゲツタ装置
の製造方法を提供することにある。Purpose of the Invention The purpose of the present invention was made in view of the above points, and it is an object of the present invention to provide a method for manufacturing a high-quality getter device that has high temperature oxidation resistance and does not cause any trouble when used. There is a particular thing.
発明の概要
本発明は、揮発性エステルを生成しない溶剤に
ホウ素酸化物を溶解した溶液をゲツタもしくはゲ
ツタ材を充填したゲツタ装置に塗布し乾燥させ
て、ゲツタもしくはゲツタ装置にホウ素酸化物を
被覆させて耐酸化性ゲツタ装置を製造する。この
溶液はしばらくの間放置しておいても耐酸化性ゲ
ツタ装置を製造する上で何ら障害が伴わない。そ
して本発明で製造された耐酸化性ゲツタ装置はフ
アンネルとパネルとの封着における高温処理によ
る影響は受けない。Summary of the Invention The present invention involves applying a solution of boron oxide dissolved in a solvent that does not generate volatile esters to a getter or a getter device filled with a getter material and drying the solution to coat the getter or getter device with boron oxide. An oxidation-resistant getter device is manufactured using the same method. Even if this solution is allowed to stand for some time, it will not cause any problems in the production of oxidation-resistant getter devices. The oxidation-resistant getter device manufactured according to the present invention is not affected by high temperature treatment during sealing between the funnel and the panel.
発明の実施例
実施例 1
第1図は本発明によつて得られる耐酸化性ゲツ
タ装置の断面図である。この耐酸化性ゲツタ装置
10は外径22.0mm、内径15.0mm、高さ2.7mm、厚さ
0.18mmで断面がU字形の不誘鋼からなる開口した
環状金属製のゲツタ容器12に、ゲツタ材11が
充填されている。なお本実施例では、ゲツタ材と
してBa―Al合金粉末とニツケル粉末と窒化ゲル
マニウム―鉄粉末との重量組成比を略49:49:2
に調整した。そして、このゲツタ装置10を無水
ホウ酸を10重量%含むエチレングリコールモノメ
チルエーテル溶液に浸漬し、大気中で150℃2時
間電熱乾燥器を用いて乾燥し、真空中500℃30分
間加熱した。すると、ゲツタ装置10のゲツタ容
器12には薄いホウ素酸化物13が被覆された。
この様に製造した耐酸化性ゲツタ装置をゲツタフ
ラツシユさせると爆発的なバリウム飛散や浮き上
り現象もなく良好な特性を示した。また溶液生成
後12時間放置した溶液を用い上述の場合と同様に
してゲツタ装置にホウ素酸化物の被覆を形成し
た。このゲツタ装置をゲツタフラツシユさせたと
ころ、上述の例と同様に爆発的なバリウム飛散や
浮き上り現象もなく良好な特性を示した。このこ
とは、溶液生成後しばらくの間放置した溶液を用
いて製造してもゲツタ装置のゲツタ機能が低下し
ないことを示している。EXAMPLES OF THE INVENTION Example 1 FIG. 1 is a sectional view of an oxidation-resistant getter device obtained according to the present invention. This oxidation-resistant getter device 10 has an outer diameter of 22.0 mm, an inner diameter of 15.0 mm, a height of 2.7 mm, and a thickness of
A getter material 11 is filled in an open annular metal getter container 12 made of inductive steel and having a U-shaped cross section with a diameter of 0.18 mm. In this example, the weight composition ratio of Ba-Al alloy powder, nickel powder, and germanium nitride-iron powder as the getter material was approximately 49:49:2.
Adjusted to. Then, this getter device 10 was immersed in an ethylene glycol monomethyl ether solution containing 10% by weight of boric anhydride, dried in the air at 150°C for 2 hours using an electric dryer, and heated in vacuum at 500°C for 30 minutes. Then, the getter container 12 of the getter device 10 was coated with a thin boron oxide 13.
When the oxidation-resistant getter device manufactured in this manner was subjected to getter flashing, it exhibited good characteristics without any explosive barium scattering or floating phenomenon. Further, a boron oxide coating was formed on the getter device in the same manner as in the above case using the solution that was left to stand for 12 hours after solution generation. When this getter device was subjected to a getter flash, it showed good characteristics without any explosive barium scattering or floating phenomenon, similar to the above-mentioned example. This shows that the getter function of the getter device does not deteriorate even if the getter device is manufactured using a solution that has been left for a while after solution generation.
実施例 2
次に溶液生成後12時間放置した溶液を用いて作
られた実施例1のゲツタ装置を実際に陰極線管に
用いた場合について説明する。第2図は陰極線管
31の一部切欠断面図である。第2図に示すよう
に、前面ガラスパネル20内面に蛍光面21、ア
ルミ蒸着面22を順次被着形成し、フレーム24
を介して取り付けられたシヤドウマスス23をパ
ネル側壁に支持固定する。次に本発明により得ら
れたゲツタ装置25を支持板26を介してフレー
ム24に取り付ける。しかる後に、内面に導電膜
27が塗布されたフアンネル28とガラスパネル
20との当接面にフリツトガラス29を被着し、
約450℃で1時間の高温処理により両者を封着す
ると共に蛍光膜とメタルバツク被覆との間の有機
材を蒸発させる。この後に電子銃をネツク部30
に封着し、排気工程を経て陰極線管31を封止す
る。その後、高周波誘導加熱によりゲツタフラツ
シユを行ない電子銃のエージング等を経て陰極線
管31が完成する。この場合においても、実施例
1のときと同様の効果が得られた。このようにし
て得られた陰極線管は、ゲツタ装置が電子銃に取
り付けられた陰極線管と比較し電子放射特性及び
耐圧特性が同等であることが確認された。Example 2 Next, a case will be described in which the getter device of Example 1, which was made using a solution that was left to stand for 12 hours after solution generation, was actually used in a cathode ray tube. FIG. 2 is a partially cutaway sectional view of the cathode ray tube 31. As shown in FIG. 2, a fluorescent screen 21 and an aluminum vapor deposition surface 22 are sequentially formed on the inner surface of a front glass panel 20, and a frame 24 is formed.
The shadow mass 23 attached via the panel is supported and fixed to the side wall of the panel. Next, the getter device 25 obtained according to the present invention is attached to the frame 24 via the support plate 26. After that, a fritted glass 29 is applied to the contact surface between the funnel 28 whose inner surface is coated with the conductive film 27 and the glass panel 20,
A high-temperature treatment at about 450° C. for 1 hour seals the two together and evaporates the organic material between the fluorescent film and the metal back coating. After this, connect the electron gun to the net section 30.
The cathode ray tube 31 is sealed through an evacuation process. Thereafter, the cathode ray tube 31 is completed through getter flashing by high frequency induction heating, aging of the electron gun, etc. In this case as well, the same effects as in Example 1 were obtained. It was confirmed that the cathode ray tube thus obtained had electron emission characteristics and breakdown voltage characteristics equivalent to those of a cathode ray tube in which a getter device was attached to an electron gun.
また次に陰極線管等のフアンネルとパネルとを
封着する前に管内に取り付けられた場合、本発明
の製造方法により製造されたゲツタ装置が高温処
理に対して何ら変化を受けずに本来のゲツタ作用
を働くことを示す。この場合、実施例2の450℃
1時間の高温処理よりも条件を厳しくし450℃2
時間の高温処理とした。試験するゲツタ装置は次
の通り2種類ある。第1のゲツタ装置は溶液を生
成直後の溶液にてホウ素酸化物の被覆を形成した
ものである。第2のゲツタ装置は溶液を生成後12
時間放置した溶液にて被覆を形成したものであ
る。第1のゲツタと第2のゲツタ装置とをそれぞ
れゲツタフラツシユさせると両方のゲツタ装置と
もゲツタ材の浮き上り現象及びゲツタ材がそつて
ゲツタ容器外に出るのが見られなかつた。そし
て、ゲツタフラツシユの際に生じやすい爆発的な
バリウムの飛散も確認されなかつた。よつて本発
明の製造方法を用いれば、ホウ素酸化物を溶解し
た溶液をしばらくの間放置しておくことができ
る。 Furthermore, when installed in a cathode ray tube or the like before sealing the funnel and panel, the getter device manufactured by the manufacturing method of the present invention will not undergo any change due to high temperature treatment and will retain its original getter device. Indicates that it has an effect. In this case, 450℃ of Example 2
The conditions are stricter than the one hour high temperature treatment at 450℃2.
It was treated at high temperature for an hour. There are two types of getter devices to be tested: The first getter device is one in which a coating of boron oxide is formed using a solution immediately after the solution is generated. The second getter device produces a solution 12
A coating is formed using a solution that is left to stand for a period of time. When the first getter device and the second getter device were respectively flushed, no lifting of the getter material or the getter material coming out of the getter container was observed in both getter devices. Furthermore, no explosive scattering of barium, which tends to occur during gettuta flushing, was observed. Therefore, by using the production method of the present invention, a solution in which boron oxide is dissolved can be left for a while.
次に、本発明のようにホウ素酸化物と溶剤とが
反応しエステルを生成しない溶剤の効果を第3図
により詳細に説明する。 Next, the effect of a solvent that does not react with a boron oxide to form an ester as in the present invention will be explained in detail with reference to FIG.
第3図は、横軸に溶剤にホウ素酸化物を溶解さ
せた後溶液を放置した時間、縦軸に初めに溶剤に
溶解させたホウ素酸化物に対して溶液に溶解して
いるホウ素酸化物の重量組成比で示したものであ
る。溶剤にメチルアルコールを用いた特性41に
示されるように溶液の放置時間が長くなるに従つ
て溶液中のホウ素酸化物が減少している。すなわ
ち生成後しばらく放置した溶液を用いてゲツタ装
置にホウ素酸化物を被覆しても被覆量が初期に設
定した量よりも少なくなつてしまい、ゲツタフラ
ツシユの際のゲツタ材の浮き上り防止等の本発明
の目的を達するのが困難であると推定される。一
方溶剤にエチレングリコールモノメチルエーテル
を用いた特性42に示されるように溶液をしばら
く放置しても溶液中に溶解しているホウ素酸化物
は略一定である。これは、溶剤とホウ素酸化物と
が反応してエステルを作らずホウ素が蒸発しない
ためである。すなわち、本発明による溶剤を用い
ることにより生成後しばらく放置した溶液を用い
てゲツタ装置を製造しても、ゲツタフラツシユの
際のゲツタの浮き上り防止等の本発明の目的を充
分に達することが推定される。 In Figure 3, the horizontal axis shows the time the solution was left to stand after dissolving boron oxide in the solvent, and the vertical axis shows the amount of boron oxide dissolved in the solution compared to the boron oxide initially dissolved in the solvent. It is shown in terms of weight composition ratio. As shown in characteristic 41 using methyl alcohol as the solvent, the boron oxide in the solution decreases as the solution is left for a longer time. In other words, even if the getter device is coated with boron oxide using a solution that has been left for a while after formation, the amount of coating will be less than the initially set amount. It is estimated that it will be difficult to achieve the objectives of On the other hand, as shown in characteristic 42 when ethylene glycol monomethyl ether is used as the solvent, the amount of boron oxide dissolved in the solution remains approximately constant even if the solution is left for a while. This is because the solvent and boron oxide do not react to form ester and boron does not evaporate. That is, it is presumed that by using the solvent of the present invention, even if a getter device is manufactured using a solution that has been left for a while after being produced, the object of the present invention, such as preventing getters from floating during getter flushing, can be sufficiently achieved. Ru.
さらに第4図により本発明の耐酸化性ゲツタ装
置の製造方法を用いることが、ゲツタ装置のゲツ
タ材の浮き上りやゲツタフラツシユの際のバリウ
ムの爆発的飛散の原因であるゲツタ材の酸化防止
に有用であることを詳細に述べる。 Furthermore, as shown in FIG. 4, the use of the method for manufacturing an oxidation-resistant getter device of the present invention is useful for preventing the oxidation of the getter material, which is the cause of the lifting of the getter material of the getter device and the explosive scattering of barium during getter flushing. This is explained in detail.
第4図は溶剤としてメチルアルコール、エチレ
ングリコールモノメチルエーテルそれぞれに10重
量%の無水ホウ酸を加えて生成した溶液を用いて
それぞれ耐酸化性ゲツタ装置を製造した後、大気
中450℃で2時間の高温処理を行ない酸化増量を
調べたものである。横軸にそれぞれの耐酸化性ゲ
ツタ装置を製造する際に用いた溶液を生成してか
らの放置時間をとり、縦軸に大気中450℃で2時
間の高温処理(以下、大気処理と称する)を行な
つた際のそれぞれの耐酸化性ゲツタ装置の酸化増
量をゲツタ材中に含まれるニツケル粉末量で割つ
た重量組成比を示す。この時、酸化増量をニツケ
ル粉末量で除したのは、酸化するのは主にニツケ
ル粉末だからである。溶剤としてメチルアルコー
ルを用いた場合の耐酸化性ゲツタ装置の特性51
に示す様に、溶液を生成して直ちに行なつた(放
置時間は0時間)場合、大気処理を行なうと酸化
増量は0.20重量%であり、ゲツタフラツシユを行
なつても浮き上り現象及びゲツタ材がそつてゲツ
タ容器外に出る(以下、ピーリング現象と称す
る)のが見られなかつた。しかし、溶液を生成し
て6時間放置した場合、大気処理を行なうと酸化
増量は0.70重量%となり、ゲツタフラツシユを行
なうと浮き上り現象が見られた。さらに溶液を生
成して12時間放置した場合、大気処理を行なうと
酸化増量は2.00重量%にも達し、ゲツタフラツシ
ユを行なうと浮き上り現象が顕著となり、その上
ピーリング現象までも確認された。それに引き換
え、エチレングリコールモノメチルエーテルを溶
剤として用いた場合の耐酸化性ゲツタ装置の特性
52に示す様に、溶液を生成後12時間放置してか
ら大気処理を行なうと酸化増量は0.24重量%とな
り、ゲツタフラツシユを行なつても浮き上り及び
ピーリング現象は確認されなかつた。 Figure 4 shows that oxidation-resistant getter devices were manufactured using solutions prepared by adding 10% by weight of boric anhydride to methyl alcohol and ethylene glycol monomethyl ether as solvents, and then heated at 450°C in the air for 2 hours. The weight increase due to oxidation was investigated by high-temperature treatment. The horizontal axis shows the standing time after producing the solution used to manufacture each oxidation-resistant getter device, and the vertical axis shows the high temperature treatment at 450°C for 2 hours in the atmosphere (hereinafter referred to as atmospheric treatment). The weight composition ratio obtained by dividing the oxidation weight gain of each oxidation-resistant getter device by the amount of nickel powder contained in the getter material when performing this is shown. At this time, the oxidation weight increase was divided by the amount of nickel powder because it is mainly the nickel powder that is oxidized. Characteristics of oxidation-resistant getter device when methyl alcohol is used as a solvent 51
As shown in Figure 2, when the solution is treated immediately after it is produced (the standing time is 0 hours), the oxidation weight increase is 0.20% by weight when the atmospheric treatment is performed, and even when the getter flush is performed, the lifting phenomenon and the getter material do not occur. However, no particles were observed to come out of the container (hereinafter referred to as a peeling phenomenon). However, when a solution was produced and left to stand for 6 hours, the oxidation weight increase was 0.70% by weight after atmospheric treatment, and a lifting phenomenon was observed when Getta flushing was performed. Furthermore, when a solution was produced and left for 12 hours, the weight increase by oxidation reached as much as 2.00% by weight after atmospheric treatment, and when Getta flushing was performed, the lifting phenomenon became noticeable, and even the peeling phenomenon was observed. In contrast, as shown in Characteristics 52 of the oxidation-resistant getter device when ethylene glycol monomethyl ether is used as a solvent, if the solution is allowed to stand for 12 hours after being formed and then treated in the atmosphere, the weight gain due to oxidation is 0.24% by weight. No lifting or peeling phenomena were observed even after Getta flushing was performed.
よつて、本発明の耐酸性ゲツタ装置の製造方法
を採用すれば、ゲツタ装置のゲツタ材の浮き上り
やピーリング現象そしてゲツタフラツシユの際の
バリウムの爆発的飛散の原因であるゲツタ材の酸
化をも防止することに有用であることが確認され
た。 Therefore, by adopting the method for manufacturing an acid-resistant getter device of the present invention, it is possible to prevent the oxidation of the getter material, which is the cause of the lifting and peeling phenomenon of the getter material of the getter device and the explosive scattering of barium during getter flushing. It was confirmed that it is useful for
上記の実施例のようにゲツタ装置はゲツタ材に
被覆されたホウ素酸化物の厚さを一定に保つこと
が出来るようになつた。これは、ホウ素酸化物を
溶かす溶剤をアルコール類にかえて、ホウ素酸化
物と反応しエステルを作らない溶剤にかえたため
である。この為、ゲツタ材に被覆するホウ素酸化
物の量を適宜調整することが出来る。そこで、本
実施例のゲツタ装置を高周波誘導加熱でゲツタフ
ラツシユさせた場合、Ba―Al合金粉末とニツケ
ル粉末との反応性は従来のホウ素酸化物で被覆し
ていないゲツタ装置と同じ位に良く、さらに飛散
開始時間も損われることがなかつた。 As in the above embodiment, the getter device is now able to maintain a constant thickness of the boron oxide coated on the getter material. This is because the solvent that dissolves boron oxide was changed to an alcohol, which did not react with boron oxide to form an ester. Therefore, the amount of boron oxide coated on the getter material can be adjusted as appropriate. Therefore, when the getter device of this example is flashed by high-frequency induction heating, the reactivity between the Ba-Al alloy powder and the nickel powder is as good as that of the conventional getter device not coated with boron oxide, and The scattering start time was also not impaired.
またその上、ゲツタ装置を例えば大気中2時間
450℃で高温処理した際にニツケル粉末が酸化さ
れず、NiOを形成してNiOとBa―Al合金粉末と
が急激な反応を起こすこともなかつた。そしてゲ
ツタ材にホウ素酸化物を一定に被覆することが出
来る為、浮き上り等の原因を根本から解決した。
そして本実施例のゲツタ装置は特開昭56―61736
号公報に示された耐酸化性ゲツタ装置の製造方法
とは異なりホウ素酸化物を溶解した溶液を生成後
しばらく放置してゲツタ装置を製造しても高信頼
性を確認できた。さらに、ゲツタフラツシユを行
ない形成したバリウム膜の分布および飛散バリウ
ム量、放出ガス量(主として窒素ガス等)を測定
したところ、従来のホウ素酸化物を被覆していな
いゲツタ装置と同等の特性を示し、ゲツタ装置本
来の役割を損なうことはないことが確認された。 In addition, the Getsuter device can be exposed to air for 2 hours, for example.
During high-temperature treatment at 450°C, the nickel powder was not oxidized, and NiO was not formed to cause a rapid reaction between NiO and the Ba-Al alloy powder. Since the getter material can be uniformly coated with boron oxide, the cause of lifting and other problems can be fundamentally solved.
The getter device of this embodiment is disclosed in Japanese Patent Application Laid-Open No. 56-61736.
Unlike the method for manufacturing an oxidation-resistant getter device disclosed in the publication, high reliability was confirmed even when the getter device was manufactured by leaving a solution containing boron oxide dissolved therein for a while after it was produced. Furthermore, when we measured the distribution of the barium film formed by the getter flash, the amount of barium scattered, and the amount of released gas (mainly nitrogen gas, etc.), the results showed that the getter device had the same characteristics as the conventional getter device not coated with boron oxide. It was confirmed that the original role of the device was not impaired.
上述した実施例でゲツタ材を充填したゲツタ装
置を、無水ホウ酸を10重量%含むエチレングリコ
ールモノメチルエーテル溶液に浸漬して製造する
工程を述べた。しかし、ゲツタ材のみをホウ素酸
化物を溶解したエチレングリコールモノメチルエ
ーテル溶液に浸漬し、大気中で150℃2時間電熱
乾燥器を用いて乾燥し、真空中500℃30分間加熱
してゲツタ材のみにホウ素酸化物を被覆してから
ゲツタ容器に充填してゲツタ装置を製造してもよ
い。さらに、ゲツタ材及びゲツタ装置にホウ素酸
化物を被覆する際、ホウ素酸化物を溶解した溶液
をスプレー等でゲツタ材及びゲツタ装置に塗布し
てもよい。また、実施例ではエチレングリコール
モノメチルエーテルの単体を溶剤としたが、例え
ばこれ以外にエチレングリコールモノエチルエー
テル、エチレングリコールモノ―n―ブチルエー
テル、エチレングリコールモノメチルエーテルよ
りなる群から選ばれた単体または混合溶液を溶剤
として用いても良い。なお、その溶剤の混合割合
はどの様な割合でも良いのは言うまでもない。 In the above-described embodiment, a process was described in which the getter device filled with the getter material was immersed in an ethylene glycol monomethyl ether solution containing 10% by weight of boric anhydride. However, only the getus wood was soaked in an ethylene glycol monomethyl ether solution containing boron oxide, dried in the air at 150°C for 2 hours using an electric dryer, and then heated in a vacuum at 500°C for 30 minutes. The getter device may be manufactured by coating the boron oxide and filling the getter container. Further, when coating the getter material and the getter device with boron oxide, a solution in which the boron oxide is dissolved may be applied to the getter material and getter device by spraying or the like. Furthermore, in the examples, ethylene glycol monomethyl ether alone was used as the solvent, but in addition to this, for example, a single or mixed solution of ethylene glycol monoethyl ether, ethylene glycol mono-n-butyl ether, and ethylene glycol monomethyl ether may be used. may be used as a solvent. It goes without saying that the mixing ratio of the solvents may be any ratio.
発明の効果
以上のように本発明によれば、ホウ素酸化物を
溶解する溶剤がホウ素酸化物と反応した揮発性の
エステルを生成しないので、溶液濃度の経時変化
が少ないので、溶液生成時期に関係なくゲツタ材
に被覆されたホウ素酸化物の厚さを常に一定に保
つことが出来る。溶剤とホウ素酸化物とが反応し
エステルを生成し溶液中のホウ素酸化物が蒸発し
ないのでホウ素酸化物を溶解した溶液生成後、相
当な時間溶液を放置しておけるので、溶液の管理
が非常に容易になる。そしてさらに本発明の耐酸
化性ゲツタ装置の製造方法によれば、ホウ素酸化
物をゲツタ材に被覆することはゲツタ装置を製造
してからでもよいので、耐酸化性ゲツタ装置を簡
単に安価に製造でき量産が容易となりさらに高品
質のゲツタ装置が製造できることが推定される。Effects of the Invention As described above, according to the present invention, since the solvent for dissolving boron oxide does not generate volatile esters that react with boron oxide, there is little change in solution concentration over time, so there is no effect on the timing of solution generation. The thickness of the boron oxide coated on the getter material can always be kept constant. The solvent and boron oxide react to form an ester, and since the boron oxide in the solution does not evaporate, the solution can be left for a considerable period of time after the boron oxide is dissolved, making it very easy to manage the solution. becomes easier. Further, according to the method for manufacturing an oxidation-resistant getter device of the present invention, the getter material may be coated with boron oxide after the getter device is manufactured, so the oxidation-resistant getter device can be manufactured easily and inexpensively. It is estimated that mass production will become easier and a getter device of higher quality can be manufactured.
第1図は本発明によつて得られる耐酸化性ゲツ
タ装置の断面図、第2図は陰極線管の一部切欠断
面図、第3図はホウ素酸化物と溶剤とが反応しエ
ステルを生成しない溶剤の効果を示した図、第4
図はホウ素酸化物を溶解した溶液生成後の放置時
間とゲツタ材の酸化を示した図である。
10…耐酸化性ゲツタ装置、11…ゲツタ材、
12…ゲツタ容器、13…ホウ素酸化物、42…
溶剤にエチレングリコールモノメチルエーテルを
用いた特性、52…エチレングリコールモノメチ
ルエーテルを溶剤として用いた耐酸化性ゲツタ装
置の特性。
Fig. 1 is a cross-sectional view of an oxidation-resistant getter device obtained by the present invention, Fig. 2 is a partially cutaway cross-sectional view of a cathode ray tube, and Fig. 3 shows that boron oxide and solvent do not react to form an ester. Diagram showing the effect of solvent, 4th
The figure shows the standing time and oxidation of the getter material after the formation of a solution containing dissolved boron oxide. 10... Oxidation-resistant getter device, 11... Getter material,
12...Getter container, 13...Boron oxide, 42...
Characteristics using ethylene glycol monomethyl ether as a solvent, 52...Characteristics of an oxidation-resistant getter device using ethylene glycol monomethyl ether as a solvent.
Claims (1)
しない水を除く溶剤にホウ素酸化物を溶解させて
溶液とする工程と、前記溶液をゲツタ材もしくは
このゲツタ材を金属性保持器に充填したゲツタ装
置に塗布する工程と、前記ゲツタ材もしくは前記
ゲツタ装置を乾燥させ前記ゲツタ材もしくは前記
ゲツタ装置にホウ素酸化物を被覆する工程とを備
えたことを特徴とする耐酸化性ゲツタ装置の製造
方法。 2 前記ゲツタ材にホウ素酸化物を被覆した後、
前記ゲツタ材を金属性保持器に充填する工程を備
えたことを特徴とする特許請求の範囲第1項記載
の耐酸化性ゲツタ装置の製造方法。 3 前記溶液をゲツタ材もしくはこのゲツタ材を
金属性保持器に充填したゲツタ装置に塗布する工
程は、前記溶液にゲツタ材もしくはこのゲツタ材
を金属性保持器に充填したゲツタ装置を浸漬する
工程であることを特徴とする特許請求の範囲第1
項記載の耐酸化性ゲツタ装置の製造方法。 4 前記溶液をゲツタ材もしくはこのゲツタ材を
金属性保持器に充填したゲツタ装置に塗布する工
程は、前記溶液をゲツタ材もしくはこのゲツタ材
を金属性保持器に充填したゲツタ装置にスプレー
する工程であることを特徴とする特許請求の範囲
第1項記載の耐酸化性ゲツタ装置の製造方法。 5 前記溶剤はエチレングリコールモノメチルエ
ーテル、エチレングリコールモノエチルエーテ
ル、エチレングリコールモノーn―ブチルエーテ
ルよりなる群から選ばれた単体又は混合溶液から
なることを特徴とする特許請求の範囲第1項記載
の耐酸化性ゲツタ装置の製造方法。[Claims] 1. A step of dissolving the boron oxide in a solvent excluding water that does not react with the boron oxide to produce volatile esters to form a solution, and using the solution as a getter material or maintaining the getter material as metallic. An oxidation-resistant getter comprising the steps of applying it to a getter device filled in a container, and drying the getter material or the getter device to coat the getter material or the getter device with boron oxide. Method of manufacturing the device. 2 After coating the getter material with boron oxide,
2. The method of manufacturing an oxidation-resistant getter device according to claim 1, further comprising the step of filling a metal holder with the getter material. 3. The step of applying the solution to the getter material or the getter device in which a metal holder is filled with the getter material is a step of immersing the getter material or the getter device in which the getter material is filled in a metal holder in the solution. The first claim characterized in that
A method for manufacturing an oxidation-resistant getter device as described in . 4. The step of applying the solution to the getter material or the getter device in which the getter material is filled in a metal holder is a step of spraying the solution onto the getter material or the getter device in which the getter material is filled in a metal holder. A method for manufacturing an oxidation-resistant getter device according to claim 1, characterized in that: 5. The oxidation-resistant agent according to claim 1, wherein the solvent is a single substance or a mixed solution selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, and ethylene glycol mono n-butyl ether. A method of manufacturing a sex getter device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57005427A JPS58123632A (en) | 1982-01-19 | 1982-01-19 | Production process for oxidation-proof getter device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57005427A JPS58123632A (en) | 1982-01-19 | 1982-01-19 | Production process for oxidation-proof getter device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58123632A JPS58123632A (en) | 1983-07-22 |
| JPS649700B2 true JPS649700B2 (en) | 1989-02-20 |
Family
ID=11610870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57005427A Granted JPS58123632A (en) | 1982-01-19 | 1982-01-19 | Production process for oxidation-proof getter device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58123632A (en) |
-
1982
- 1982-01-19 JP JP57005427A patent/JPS58123632A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58123632A (en) | 1983-07-22 |
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