JPH0113094B2 - - Google Patents
Info
- Publication number
- JPH0113094B2 JPH0113094B2 JP14868680A JP14868680A JPH0113094B2 JP H0113094 B2 JPH0113094 B2 JP H0113094B2 JP 14868680 A JP14868680 A JP 14868680A JP 14868680 A JP14868680 A JP 14868680A JP H0113094 B2 JPH0113094 B2 JP H0113094B2
- Authority
- JP
- Japan
- Prior art keywords
- developer
- constant temperature
- developing
- development
- temperature bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3071—Process control means, e.g. for replenishing
Landscapes
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
この発明は、ポジ型フオトレジストの現像に適
した現像処理方法および装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a development processing method and apparatus suitable for developing a positive photoresist.
半導体素子を製造する際に、Si基板上に例えば
SiO2などの層を形成し、さらにこの表面にフオ
トレジスト層を被覆し、このフオトレジスト層に
紫外線を照射し、現像処理によつて所望のフオト
レジストパターンを形成して、フオトレジストが
被覆されていない個所の下に存在するSiO2層を
その位置から腐食して除去することは公知であ
る。この際に用いるフオトレジストには、ポジ型
とネガ型の２種類があつて使用目的によつて使い
分けられている。ポジ型フオトレジストはネガ型
フオトレジストに比べ解像力の点で優れ、より微
細加工が要求されるLSIなどに導入されてきてい
る。 When manufacturing semiconductor devices, for example,
A layer such as SiO 2 is formed, a photoresist layer is further coated on this surface, this photoresist layer is irradiated with ultraviolet rays, and a desired photoresist pattern is formed through a development process, so that the photoresist is coated. It is known to erode and remove the SiO 2 layer present under the uncontained areas from that location. There are two types of photoresists used in this case, positive type and negative type, and they are used depending on the purpose of use. Positive-type photoresists have superior resolution than negative-type photoresists, and are being used in LSIs and other applications that require finer processing.
ポジ型フオトレジストは、光の照射された部分
が光分解し、現像液に可溶になる性質のフオトレ
ジストである。そしてこれは一般にベンゾキノン
ジアジドまたはナフトキノンジアジドを光分解剤
として、これとアルカリ可溶性ノボラツク樹脂お
よび溶剤から構成されている。このフオトレジス
トを現像する現像液は、無機アルカリあるいは有
機アルカリの水溶液が一般的である。従来、この
系の現像液は、苛性ソーダ、ケイ酸ソーダなどの
無機アルカリ水溶液が用いられていたが、アルカ
リ金属（Na，Ｋなど）が、半導体素子製造には
特性上悪影響を及ぼすので、メタルフリーの現像
液、すなわち、有機アルカリ水溶液の現像液が開
発市販され使用されるようになつてきている。 A positive photoresist is a photoresist in which the portion exposed to light photodecomposes and becomes soluble in a developer. This generally consists of benzoquinone diazide or naphthoquinone diazide as a photodegrading agent, together with an alkali-soluble novolac resin and a solvent. The developer for developing this photoresist is generally an aqueous solution of an inorganic alkali or an organic alkali. Conventionally, this type of developer used an inorganic alkali aqueous solution such as caustic soda or sodium silicate. A developing solution, that is, a developing solution of an aqueous organic alkaline solution has been developed, commercially available, and has come into use.
市販のメタルフリー現像液は、テトラメチルア
ンモニウムハイドロオキサイド、あるいはエタノ
ールアミンとアルコールの水溶液よりなるものと
推測される。この系の現像液はアルカリ水溶液の
ため、空気中の炭酸ガスの影響を受け劣化する性
質があり、現像液の調製直後と使用途中の状態で
は現像液の劣化による現像能力に差異が生じ、同
一条件で露光された試料においても、所望パター
ンのパターン寸法が違うという欠点を有してい
た。 Commercially available metal-free developers are presumed to be composed of tetramethylammonium hydroxide or an aqueous solution of ethanolamine and alcohol. Since this type of developer is an alkaline aqueous solution, it tends to deteriorate due to the influence of carbon dioxide gas in the air, and there is a difference in developing ability due to the deterioration of the developer between immediately after preparation and during use. Even samples exposed under these conditions had the disadvantage that the pattern dimensions of the desired patterns were different.
このため、現像液の調製後、何時間以内に捨て
るとか、PHを計測するとかの管理方法が採られて
きたが、現像能力との対応がとれないで、現像後
のフオトレジストパターンの仕上がり寸法を精度
良く制御することが困難であつた。 For this reason, management methods have been adopted, such as discarding the developing solution within a certain number of hours after preparing it, and measuring the pH. It was difficult to control accurately.
この発明は、上記公知の現像処理方法がもつ欠
点を解消した現像処理方法およびその装置の提供
を目的とし、テトラメチルアンモニウムハイドロ
オキサイド系の現像液の蛍光現像に着目して、こ
の発明を完成せしめたものである。以下、この発
明について説明するが、その前に従来の現像処理
方法について第１図により説明する。 The purpose of this invention is to provide a developing method and an apparatus therefor that eliminate the drawbacks of the known developing methods described above, and the present invention was completed by focusing on fluorescent development using a tetramethylammonium hydroxide developer. It is something that The present invention will be explained below, but before that, a conventional developing method will be explained with reference to FIG.
第１図は従来の現像装置の概略を示す構成図で
ある。この現像装置１は、露光された基板層へ現
像液を施すに適する現像室２と、水を以て洗浄す
るための洗浄室３より構成され、現像室２には現
像液を恒温に保持するための恒温槽２１が設けら
れる。現像部の現像室２の上部には、現像液を噴
射するノズル２５が設けられている。導管２６は
恒温槽２１と連結され、恒温になつた現像液は、
導管２２、循環のためのポンプ２３および漏過器
２４を通つてノズル２５に供給される。 FIG. 1 is a block diagram schematically showing a conventional developing device. This developing device 1 is composed of a developing chamber 2 suitable for applying a developing solution to the exposed substrate layer, and a cleaning chamber 3 for cleaning with water. A constant temperature bath 21 is provided. A nozzle 25 for spraying a developer is provided at the upper part of the developing chamber 2 of the developing section. The conduit 26 is connected to the constant temperature bath 21, and the developing solution that has reached a constant temperature is
It is fed to the nozzle 25 through a conduit 22, a pump 23 for circulation and a leaker 24.
現像液を恒温に保持するための冷却管２７は、
恒温槽２１の内部に挿入され、図示しない冷却ユ
ニツトに連結されている。現像された基板は、送
り速度を任意に可変できるモータ３４に連結され
た搬送系３３上に時間的に制御されて搬送され
る。 The cooling pipe 27 for maintaining the developer at a constant temperature is
It is inserted into the thermostatic chamber 21 and connected to a cooling unit (not shown). The developed substrate is temporally controlled and transported onto a transport system 33 connected to a motor 34 whose transport speed can be arbitrarily varied.
現像に引続き、洗浄室３で現像作用の停止と残
留現像液を洗い流すための洗浄水導管３０から供
給された純水をノズル３１およびノズル３２を通
して表裏両面に噴射する。洗浄後、図示されてい
ないブロワの空気の中で乾燥される。このように
して一連の現像処理が行われる。しかし、このよ
うな従来の現像処理方法では前述した欠点を免れ
なかつた。 Following the development, in the cleaning chamber 3, pure water supplied from the cleaning water conduit 30 for stopping the developing action and washing away residual developer is sprayed onto both the front and back surfaces through the nozzle 31 and the nozzle 32. After cleaning, it is dried in the air of a blower (not shown). In this way, a series of development processes are performed. However, such conventional development processing methods cannot avoid the above-mentioned drawbacks.
第２図は、この発明の現像処理方法に用いる現
像装置の概略を示す構成図である。恒温槽２１か
ら恒温になつた現像液は、導管２２、循環のため
のポンプ２３および漏過器２４を通つてノズル２
５に供給されるのは第１図の従来の現像装置と同
じであるが、この発明では分光蛍光光度計４０を
設けてある。 FIG. 2 is a block diagram schematically showing a developing device used in the developing method of the present invention. The constant temperature developer from the constant temperature bath 21 passes through a conduit 22, a pump 23 for circulation, and a leaker 24 to the nozzle 2.
5 is the same as the conventional developing device shown in FIG. 1, but in this invention a spectrofluorometer 40 is provided.
すなわち、循環ポンプ２３と漏過器２４の間の
配管には分岐管４３が設けられ、これに石英製の
フローセル４１が接続されている。このフローセ
ル４１の中へ現像液が通過するので、分光蛍光光
度計４０により励起され蛍光を発する。この蛍光
強度は、指示計４２で読み取れるように構成され
ている。 That is, a branch pipe 43 is provided in the piping between the circulation pump 23 and the leaker 24, and a flow cell 41 made of quartz is connected to this branch pipe 43. As the developer passes through the flow cell 41, it is excited by the spectrofluorometer 40 and emits fluorescence. This fluorescence intensity is configured to be readable by the indicator 42.
第３図は、テトラメチルアンモニウムハイドロ
オキサイド系の現像液の蛍光発光スペクトルの一
例である。この励起に用いた波長は395nmであ
る。第３図に示すように、現像液調製直後と数時
間経過したものでは蛍光発光強度が異なり、時間
の経過と共に蛍光発光強度は大となる。 FIG. 3 is an example of a fluorescence emission spectrum of a tetramethylammonium hydroxide developer. The wavelength used for this excitation was 395 nm. As shown in FIG. 3, the fluorescence emission intensity is different between immediately after the developer is prepared and when several hours have passed, and the fluorescence emission intensity increases with the passage of time.
このようにして、現像液の経時変化（現像能
力、保存性）が定量的に監視でき、この蛍光発光
強度変化で現像時間を増す（あるいは減ずる）よ
うに搬送系３３に連結されたモータ３４の回転数
を制御して、現像した試料のフオトレジストパタ
ーンの仕上がり寸法を高精度に、しかも再現性よ
く処理することができる。 In this way, the change over time (developing ability, storage stability) of the developer can be quantitatively monitored, and the motor 34 connected to the transport system 33 is controlled so that the development time is increased (or decreased) based on the change in fluorescence intensity. By controlling the rotation speed, the finished dimensions of the photoresist pattern of the developed sample can be processed with high precision and good reproducibility.
なお、上記実施例では、現像液自身の蛍光発光
現象の強度変化を計測して監視したが、現像液に
α−ナフチルアミンを10-3〜10-4mol／ｌ程度加
えれば蛍光発光強度変化を感度よく観測すること
ができる。また、分光蛍光光度計４０で検知され
た蛍光発光強度により現像時間を変化させる制御
機構としては、第２図に示したモータ３４により
搬送系３３の制御、すなわち連続して噴出してい
る現像液中を現像すべき基板を通過させる時間を
制御するのみならず、タイマ等を用いて基板を停
止させた状態で現像液の噴出時間を制御するもの
であつてもよい。 In the above example, the intensity change of the fluorescence emission phenomenon of the developer itself was monitored by measuring, but if α-naphthylamine was added to the developer solution at around 10 -3 to 10 -4 mol/l, the fluorescence intensity change could be observed. It can be observed with good sensitivity. In addition, as a control mechanism for changing the development time based on the fluorescence emission intensity detected by the spectrofluorophotometer 40, the conveyance system 33 is controlled by the motor 34 shown in FIG. In addition to controlling the time during which the substrate to be developed passes through, a timer or the like may be used to control the jetting time of the developer while the substrate is stopped.
以上詳細に説明したように、この発明は、現像
液としてテトラメチルアンモニウムハイドロオキ
サイド系の現像液を使用し、この現像液自体の蛍
光現象あるいは蛍光指示薬の添加による蛍光発光
強度変化を検出することにより、現像液の経時変
化を適確にとらえて現像時間を制御するようにし
たので、同一露光条件で露光したフオトレジスト
層へのパターン形成が精度よく、しかも再現性良
く得られる効果がある。 As explained in detail above, the present invention uses a tetramethylammonium hydroxide-based developer as a developer, and detects the fluorescence phenomenon of the developer itself or the change in fluorescence emission intensity due to the addition of a fluorescent indicator. Since the development time is controlled by accurately capturing the change in the developer over time, it is possible to form a pattern on the photoresist layer exposed under the same exposure conditions with high precision and high reproducibility.
第１図は従来の現像装置を示す構成図、第２図
はこの発明の一実施例を示す構成図、第３図は現
像液の蛍光発光スペクトルを示す図である。
図中、１は現像装置、２は現像室、３は洗浄
室、２１は恒温槽、２２は導管、２３はポンプ、
２５はノズル、２６は導管、２７は冷却管、３３
は搬送系、３４はモータ、４０は分光蛍光光度
計、４１はフローセル、４２は指示計、４３は分
岐管である。
FIG. 1 is a block diagram showing a conventional developing device, FIG. 2 is a block diagram showing an embodiment of the present invention, and FIG. 3 is a diagram showing a fluorescence emission spectrum of a developer. In the figure, 1 is a developing device, 2 is a developing chamber, 3 is a cleaning chamber, 21 is a constant temperature bath, 22 is a conduit, 23 is a pump,
25 is a nozzle, 26 is a conduit, 27 is a cooling pipe, 33
34 is a conveyance system, 34 is a motor, 40 is a spectrofluorometer, 41 is a flow cell, 42 is an indicator, and 43 is a branch pipe.
Claims (1)
露光し、現像液により現像してその表面からフオ
トレジスト層の露光された領域を取り除いてフオ
トレジストパターンを形成する方法において、前
記現像液としてテトラメチルアンモニウムハイド
ロオキサイド系の現像液を使用し、前記現像液の
蛍光発光強度変化を検出し、現像を時間的に制御
することを特徴とする現像処理方法。 ２ 現像液を恒温に保持する恒温槽、この恒温槽
から現像液を配管を介して現像室へ導入し、基板
上に塗布後露光されたポジ型フオトレジストを現
像し、その後、前記恒温槽に現像液を回収して循
環させる構成の現像装置において、前記現像液と
してテトラメチルアンモニウムハイドロオキサイ
ド系の現像液を使用し、前記配管と並列にフロー
セルを設け、このフローセル中を通過する前記現
像液の蛍光発光強度を検知する分光蛍光光度計を
設け、さらに前記分光蛍光光度計により検知され
た蛍光発光強度に応じ現像時間を変化させる制御
機構を設けたことを特徴とする現像装置。[Scope of Claims] 1. A method of forming a photoresist pattern by exposing a positive photoresist coated on a substrate and developing it with a developer to remove the exposed area of the photoresist layer from its surface, A development processing method characterized in that a tetramethylammonium hydroxide-based developer is used as the developer, and a change in fluorescence emission intensity of the developer is detected to temporally control the development. 2. A constant temperature bath that keeps the developer at a constant temperature.The developer is introduced from this constant temperature bath through piping into the development chamber, and the positive photoresist that has been applied and exposed on the substrate is developed, and then the developer is transferred to the constant temperature bath. In a developing device configured to collect and circulate a developer, a tetramethylammonium hydroxide-based developer is used as the developer, a flow cell is provided in parallel with the piping, and the developer that passes through the flow cell is A developing device comprising: a spectrofluorometer for detecting fluorescence intensity; and a control mechanism for changing development time in accordance with the fluorescence intensity detected by the spectrofluorometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14868680A JPS5772147A (en) | 1980-10-22 | 1980-10-22 | Method and device for development |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14868680A JPS5772147A (en) | 1980-10-22 | 1980-10-22 | Method and device for development |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5772147A JPS5772147A (en) | 1982-05-06 |
| JPH0113094B2 true JPH0113094B2 (en) | 1989-03-03 |
Family
ID=15458326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14868680A Granted JPS5772147A (en) | 1980-10-22 | 1980-10-22 | Method and device for development |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772147A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4482424A (en) * | 1983-05-06 | 1984-11-13 | At&T Bell Laboratories | Method for monitoring etching of resists by monitoring the flouresence of the unetched material |
| JP2695215B2 (en) * | 1988-12-20 | 1997-12-24 | 松下電器産業株式会社 | Developing device and developing method |
-
1980
- 1980-10-22 JP JP14868680A patent/JPS5772147A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5772147A (en) | 1982-05-06 |
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