JPH0115385B2 - - Google Patents
Info
- Publication number
- JPH0115385B2 JPH0115385B2 JP56165718A JP16571881A JPH0115385B2 JP H0115385 B2 JPH0115385 B2 JP H0115385B2 JP 56165718 A JP56165718 A JP 56165718A JP 16571881 A JP16571881 A JP 16571881A JP H0115385 B2 JPH0115385 B2 JP H0115385B2
- Authority
- JP
- Japan
- Prior art keywords
- mounting plate
- ceramic substrate
- adhesive
- thermal expansion
- thermal head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Mounting Of Printed Circuit Boards And The Like (AREA)
Description
【発明の詳細な説明】
本発明は、セラミツク基板上に直線的に多数の
発熱抵抗素子を配設した印刷ヘツドに感熱紙を接
触させ、発熱抵抗素子を選択的に発熱させて感熱
印刷させる方式の感熱印刷装置に用いるサーマル
ヘツドに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for thermal printing by bringing thermal paper into contact with a printing head in which a large number of heating resistive elements are linearly arranged on a ceramic substrate, and selectively generating heat in the heating resistive elements. The present invention relates to a thermal head used in a thermal printing device.
以下詳細に説明する。 This will be explained in detail below.
第1図はサーマルヘツドの構成を示す斜視図、
第2図は第1図の平面図である。第1図、第2図
に於て1はセラミツク基板で2の発熱体が配設さ
れている。3はマトリツクス配線基板で樹脂材の
表面に4の導体が形成されている。5はサイリス
タアレイで両端に6,7のリード線部を持ち、そ
のリード線6,7の端末がセラミツク基板1に配
設された発熱体2のリード部2―1と、マトリツ
クス基板3に形成された導体4に溶接されてい
る。8は取付板で鉄材よりなりセラミツク基板1
とマトリツクス配線板3を接着保持している。9
はセラミツク基板1を取付板8へ固定している接
着剤、10はマトリツクス配線基板3を取付板8
へ固定する接着剤である。 Figure 1 is a perspective view showing the configuration of the thermal head;
FIG. 2 is a plan view of FIG. 1. In FIGS. 1 and 2, 1 is a ceramic substrate, and 2 heating elements are disposed on it. 3 is a matrix wiring board, and conductors 4 are formed on the surface of a resin material. Reference numeral 5 denotes a thyristor array having lead wire portions 6 and 7 at both ends, and the terminals of the lead wires 6 and 7 are formed on the lead portion 2-1 of the heating element 2 disposed on the ceramic substrate 1 and on the matrix substrate 3. It is welded to the conductor 4. 8 is a mounting plate made of iron material and has a ceramic substrate 1
and the matrix wiring board 3 are adhesively held. 9
10 is the adhesive that fixes the ceramic substrate 1 to the mounting plate 8, and 10 is the adhesive that fixes the matrix wiring board 3 to the mounting plate 8.
This is the adhesive that fixes it to.
従来は、このサーマルヘツドでの接着剤9およ
び10は硬化後ゴム弾性を有する接着剤(以下ゴ
ム系接着剤)を使用していた。 Conventionally, the adhesives 9 and 10 in this thermal head have been adhesives having rubber elasticity after curing (hereinafter referred to as rubber adhesives).
この理由はサーマルヘツドは使用時に連続印刷
を行うと、発熱体の発熱で約30℃温度上昇し、使
用温度範囲を5℃〜40℃とした場合は最高約65℃
の温度差を生じる。そのため例えば接着剤として
硬化後硬直する接着剤を使用した場合には、熱膨
張係数が異なるセラミツク基板1と取付板8の間
でバイメタル効果が生じることになる。第3図は
サーマルヘツドの長手方向の反りを示す説明図で
あり、前記接着剤を高温で硬化させ、常温にもど
した状態を示す。同図において1はセラミツク基
板、8は取付板、δは常温での反り量を示す。そ
の結果、サーマルヘツドの動作の際、前記温度範
囲に於て前記バイメタル効果によつてサーマルヘ
ツドの反りδが変化(反り呼吸をする)し、セラ
ミツク基板1に配設された発熱体2と記録紙との
当りが悪くなり、サーマルヘツドの長手方向に於
て印刷濃度むらが生じていた。この問題に対する
対策として、ゴム糸接着剤を使用することによ
り、前記バイメタル効果を接着剤層のゴムで吸収
するようにしたものであつて、前記反り量δを実
用上無視できるようにして、良好な印刷結果を得
ていたものである。 The reason for this is that when a thermal head is used for continuous printing, the temperature rises by approximately 30°C due to the heat generated by the heating element, and when the operating temperature range is 5°C to 40°C, the maximum temperature is approximately 65°C.
This results in a temperature difference of Therefore, for example, if an adhesive that hardens after curing is used as the adhesive, a bimetallic effect will occur between the ceramic substrate 1 and the mounting plate 8, which have different coefficients of thermal expansion. FIG. 3 is an explanatory view showing the warping of the thermal head in the longitudinal direction, and shows a state in which the adhesive is cured at a high temperature and then returned to room temperature. In the figure, 1 indicates the ceramic substrate, 8 indicates the mounting plate, and δ indicates the amount of warpage at room temperature. As a result, when the thermal head is operated, the warp δ of the thermal head changes (warps) due to the bimetal effect in the temperature range, and the heating element 2 disposed on the ceramic substrate 1 and the The contact with the paper became poor, and uneven printing density occurred in the longitudinal direction of the thermal head. As a countermeasure to this problem, by using a rubber thread adhesive, the bimetallic effect is absorbed by the rubber of the adhesive layer, and the amount of warpage δ can be practically ignored, resulting in a good I was getting good printing results.
しかし、従来のようにバイメタル効果を接着剤
層で吸収するということは、セラミツク基板1お
よびマトリツクス基板3は前記温度差や感熱印刷
装置の保存時の温度変化等により、第2図に示し
た矢示11,12のように取付板8上でそれぞれ
の熱膨張係数に基づく熱伸縮をすることになる。
ここでセラミツク基板1、鉄材よりなる取付板8
および樹脂材よりなるマトリツクス配線基板3の
それぞれの熱膨張係数をα1,α2およびα3としたと
き、α1<α2<α3の関係があるが、セラミツク基板
1マトリツクス配線基板3の相対位置ずれはα1と
α3の差に基づく大きさとなる。 However, absorbing the bimetallic effect with the adhesive layer as in the past means that the ceramic substrate 1 and the matrix substrate 3 will be affected by the arrows shown in FIG. As shown in Figures 11 and 12, thermal expansion and contraction occur on the mounting plate 8 based on their respective coefficients of thermal expansion.
Here, a ceramic substrate 1, a mounting plate 8 made of iron material
When the coefficients of thermal expansion of matrix wiring board 3 made of ceramic substrate 1 and resin material are α 1 , α 2 and α 3 , there is a relationship of α 1 < α 2 < α 3 . The relative positional deviation has a magnitude based on the difference between α 1 and α 3 .
このため第3図に示したサイリスタアレイ5の
リード線6,7にはα1とα3の差に基づくセラミツ
ク基板1とマトリツクス配線基板3の相対位置ず
れにより、繰返し曲げが働き、疲労破断が生じる
ことがあつた。 Therefore, the lead wires 6 and 7 of the thyristor array 5 shown in FIG. 3 are repeatedly bent due to the relative positional deviation between the ceramic substrate 1 and the matrix wiring board 3 based on the difference between α 1 and α 3 , resulting in fatigue fracture. Something happened.
本発明の目的は、この欠点を解決するため取付
板8上に於ける、セラミツク基板1とマトリツク
ス配線板3の相対位置ずれ量を少なくし、サイリ
スタアレイのリード線6,7の疲労破断を生じ難
くしたもので以下詳細に説明する。 The purpose of the present invention is to solve this problem by reducing the amount of relative positional deviation between the ceramic substrate 1 and the matrix wiring board 3 on the mounting plate 8, thereby preventing fatigue breakage of the lead wires 6 and 7 of the thyristor array. This will be explained in detail below.
第1実施例の構造は前記第1図に示したサーマ
ルヘツドと同じであるのでこれに基づき説明す
る。第1図に於て本発明ではセラミツク基板1の
接着剤9は硬化後ゴム弾性を有するゴム系接着剤
で、樹脂材よりなるマトリツクス配線基板3の接
着剤10は硬化後硬直する接着剤である。このゴ
ム系の接着剤9と硬化後硬直する接着剤10によ
り、セラミツク基板1とマトリツクス配線基板3
は鉄材よりなる取付板8に接着保持されている構
造を有する。 The structure of the first embodiment is the same as that of the thermal head shown in FIG. 1, so the explanation will be based on this. In FIG. 1, in the present invention, the adhesive 9 of the ceramic substrate 1 is a rubber adhesive that has rubber elasticity after curing, and the adhesive 10 of the matrix wiring board 3 made of a resin material is an adhesive that hardens after curing. . The rubber adhesive 9 and the adhesive 10 that hardens after curing are used to connect the ceramic substrate 1 and the matrix wiring substrate 3.
has a structure in which it is adhesively held on a mounting plate 8 made of iron.
このような構造をとることにより前記の温度差
や温度変化が生じた場合のそれぞれの熱伸縮は、
セラミツク基板1は取付板8に対してゴム系の接
着剤9で接着されているので、取付板8とは殆ど
独立して生じるが、マトリツクス配線基板3は取
付板8に硬直する接着剤10で固着されているた
め、取付板8の伸縮の影響を受け殆ど取付板8と
同じになる。このためセラミツク基板1とマトリ
ツクス配線基板3の相対位置ずれ量は前記熱膨張
係数α1とα2の差に基づく大きさとなる。すなわち
サイリスタアレイ5のリード線6,7の位置ずれ
ストロークが従来より短かくできることになる。
なお、このときマトリツクス配線基板3と取付板
8との間でバイメタル効果が生じるが、マトリツ
クス配線基板3は材質が樹脂であるため、サーマ
ルヘツドの反りに対しては、セラミツク基板の影
響に比べ殆ど無視できる。 With such a structure, each thermal expansion and contraction when the above-mentioned temperature difference or temperature change occurs is as follows.
Since the ceramic substrate 1 is bonded to the mounting plate 8 with a rubber adhesive 9, it is almost independent of the mounting plate 8, but the matrix wiring board 3 is bonded to the mounting plate 8 with a hardening adhesive 10. Since it is fixed, it is affected by the expansion and contraction of the mounting plate 8 and becomes almost the same as the mounting plate 8. Therefore, the amount of relative positional deviation between the ceramic substrate 1 and the matrix wiring board 3 is based on the difference between the thermal expansion coefficients α 1 and α 2 . In other words, the displacement stroke of the lead wires 6 and 7 of the thyristor array 5 can be made shorter than in the conventional case.
At this time, a bimetal effect occurs between the matrix wiring board 3 and the mounting plate 8, but since the matrix wiring board 3 is made of resin, it has little effect on warping of the thermal head compared to the effect of a ceramic board. Can be ignored.
以上説明したように、第1の実施例ではセラミ
ツク基板1とマトリツクス基板3の熱伸縮による
相対位置ずれの大きさがα1<α2<α3の関係に於て
従来はα1とα3の差に基づくものであつたものをα1
とα2の差に基づくものにしたため、サイリスタア
レイ5のリード線6,7に働く繰返し曲げのスト
ローク長さが小さくなり、繰返し曲げによる疲労
破断がしにくくなる利点がある。 As explained above, in the first embodiment, the magnitude of the relative positional deviation due to thermal expansion and contraction between the ceramic substrate 1 and the matrix substrate 3 is in the relationship α 1 < α 2 < α 3 ; α 1
Since it is based on the difference between
なお、第1の実施例では取付板8として鉄材を
使用しているが例えば鉄―ニツケル―コバルト系
合金のように熱膨張系数がセラミツク材に近い材
料を用いれば、セラミツク基板1とマトリツクス
配線基板3の位置ずれを殆ど無くすことができ本
発明の効果をさらに向上させることができる。 Although iron is used as the mounting plate 8 in the first embodiment, if a material with a coefficient of thermal expansion close to that of ceramic material, such as an iron-nickel-cobalt alloy, is used, the ceramic substrate 1 and the matrix wiring board can be bonded together. 3 can be almost eliminated, and the effects of the present invention can be further improved.
以上のように、本発明のサーマルヘツドによれ
ば、セラミツク基板とマトリツクス配線基板の相
対位置ずれをセラミツク基板と取付板との熱膨張
係数差に基づくものにできるのでサイリスタアレ
イのリード線の疲労破断を生じ難くすることがで
き、更に、印刷濃度むらのない良好な印刷結果を
得ることができる。 As described above, according to the thermal head of the present invention, the relative positional deviation between the ceramic substrate and the matrix wiring board can be made based on the difference in coefficient of thermal expansion between the ceramic substrate and the mounting plate. In addition, it is possible to obtain good printing results without uneven printing density.
第1図はサーマルヘツドの構成を示す斜視図、
第2図は第1図の平面図、第3図はサーマルヘツ
ドの反りを示す説明図である。
1……セラミツク基板、2……発熱体、3……
マトリツクス配線基板、4……導体、5……サイ
リスタアレイ、6,7……リード線、8……取付
板、9,10……接着剤。
Figure 1 is a perspective view showing the configuration of the thermal head;
FIG. 2 is a plan view of FIG. 1, and FIG. 3 is an explanatory diagram showing warping of the thermal head. 1... Ceramic substrate, 2... Heating element, 3...
Matrix wiring board, 4... Conductor, 5... Thyristor array, 6, 7... Lead wire, 8... Mounting plate, 9, 10... Adhesive.
Claims (1)
熱膨張係数が小なるセラミツク基板と、前記発熱
抵抗素子との電気的接続を行うためのリード線を
有し且つ熱膨張係数が大なる配線基板とを、熱膨
張係数が中なる取付板に接着してなるサーマルヘ
ツドにおいて、硬化後にゴム弾性を有する接着剤
により前記セラミツク基板が前記取付板に接着さ
れ、硬化後に硬直する接着剤により前記配線基板
が前記取付板に接着された構造としたことを特徴
とするサーマルヘツド。1. A ceramic substrate having a large number of heat generating resistive elements arranged in a straight line and having a small coefficient of thermal expansion, and a wiring having a lead wire for electrically connecting the heat generating resistive elements and having a large coefficient of thermal expansion. In a thermal head in which a substrate is bonded to a mounting plate having a medium coefficient of thermal expansion, the ceramic substrate is bonded to the mounting plate with an adhesive having rubber elasticity after curing, and the wiring is bonded with an adhesive that hardens after curing. A thermal head characterized in that the substrate is bonded to the mounting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56165718A JPS5867473A (en) | 1981-10-19 | 1981-10-19 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56165718A JPS5867473A (en) | 1981-10-19 | 1981-10-19 | Thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5867473A JPS5867473A (en) | 1983-04-22 |
| JPH0115385B2 true JPH0115385B2 (en) | 1989-03-16 |
Family
ID=15817740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56165718A Granted JPS5867473A (en) | 1981-10-19 | 1981-10-19 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5867473A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59176555U (en) * | 1983-05-13 | 1984-11-26 | ティーディーケイ株式会社 | thermal head |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52125775A (en) * | 1976-04-14 | 1977-10-21 | Fujitsu Ten Ltd | Htbrid integrated circuit unit |
| JPS5851830B2 (en) * | 1976-05-31 | 1983-11-18 | 松下電器産業株式会社 | thermal head |
| JPS5329564A (en) * | 1976-08-31 | 1978-03-18 | Fujitsu Ltd | Method of fixing ceramic substrate |
| JPS6217251Y2 (en) * | 1978-03-24 | 1987-05-01 |
-
1981
- 1981-10-19 JP JP56165718A patent/JPS5867473A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5867473A (en) | 1983-04-22 |
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