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JPH0119757B2 - - Google Patents
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JPH0119757B2 - - Google Patents

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Publication number
JPH0119757B2
JPH0119757B2 JP59276548A JP27654884A JPH0119757B2 JP H0119757 B2 JPH0119757 B2 JP H0119757B2 JP 59276548 A JP59276548 A JP 59276548A JP 27654884 A JP27654884 A JP 27654884A JP H0119757 B2 JPH0119757 B2 JP H0119757B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting layer
insulating layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59276548A
Other languages
Japanese (ja)
Other versions
JPS61158688A (en
Inventor
Kazuo Myashita
Kengo Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP59276548A priority Critical patent/JPS61158688A/en
Publication of JPS61158688A publication Critical patent/JPS61158688A/en
Publication of JPH0119757B2 publication Critical patent/JPH0119757B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 技術分野 本発明はEL(Electro−Luminescence)素子の
構成に関する。
DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to the structure of an EL (Electro-Luminescence) element.

従来技術 EL素子は種々の形状、サイズが選択でき面光
源として照明或いは指示・表示パネルとして利用
される。例えば、薄膜EL素子は一般に板状を呈
し、ガラス基板の上に透明電極、Ta2O5等の金属
酸化物である第一絶縁層、ZnS等の螢光体にMn
等の付活剤を添加してなる発光層、酸化イツトリ
ウム(Y2O3)、酸化マグネシウム(MgO)等で
なる付着物、酸化タンタル(Ta2O5)等でなる第
二絶縁層及び背面電極の各層を蒸着或いはスパツ
タリング等により順次積層した二重絶縁構造や又
は、第一絶縁層を用いず第二絶縁層のみの一重絶
縁構造が採用される。このうち付着層は、発光層
と第二絶縁層間に介在せしめられて両層間の剥離
防止用として設けられるが、この付着層自体EL
素子組立てに際し工数増加の原因となり、また該
付着層によるも剥離防止効果は十分達成し得ず、
このため発光層が外気に触れたり外部よりEL素
子内への湿気等の侵入等を招来して十分な発光特
性が得られないのが実情であつた。
Prior Art EL elements can be selected from a variety of shapes and sizes and are used as surface light sources for illumination or for instruction/display panels. For example, a thin film EL device generally has a plate shape, with a transparent electrode on a glass substrate, a first insulating layer made of a metal oxide such as Ta 2 O 5 , and a phosphor such as ZnS with Mn.
A light-emitting layer made of an activator such as, a deposit made of yttrium oxide (Y 2 O 3 ), magnesium oxide (MgO), etc., a second insulating layer made of tantalum oxide (Ta 2 O 5 ), etc., and a back surface. A double insulation structure in which each layer of the electrode is sequentially laminated by vapor deposition or sputtering, or a single insulation structure in which only the second insulation layer is used without using the first insulation layer is adopted. Among these, the adhesion layer is interposed between the light emitting layer and the second insulating layer to prevent peeling between the two layers, but this adhesion layer itself is EL
This causes an increase in man-hours when assembling the device, and the adhesion layer cannot sufficiently prevent peeling.
As a result, the light-emitting layer is exposed to the outside air, and moisture and the like can enter the EL element from the outside, making it impossible to obtain sufficient light-emitting characteristics.

目 的 本発明は上記実情に鑑み、発光層と絶縁層との
剥離を完全に防止し得ると共に、このための特別
な付着層等を設けることを必要としないEL素子
を提供するものである。
Purpose In view of the above circumstances, the present invention provides an EL element that can completely prevent separation between a light emitting layer and an insulating layer, and does not require a special adhesion layer or the like for this purpose.

概 要 上記目的は、本発明によれば、酸素イオンボン
バード処理された発光層表面上に金属酸化物層を
形成することにより達成される。
Summary According to the present invention, the above object is achieved by forming a metal oxide layer on the surface of the light emitting layer which has been subjected to oxygen ion bombardment treatment.

実施例 以下、図示した実施例に基づき本発明を詳細に
説明すれば、第1図において、1はガラス基板、
2は酸化インジム(I.T.O.)等がガラス基板1に
蒸着またはスパツタリングにより形成されてなる
透明電極、3はTa2O5等の金属酸化物が透明電極
2に蒸着またはスパツタリングにより形成されて
なる第一絶縁層、4はZnS等の螢光体が第一絶縁
層3に蒸着またはスパツタリングにより付着さ
れ、しかる後、その表面が酸素雰囲気中で放電等
の手法により酸素イオンボンバード処理され薄膜
の酸化物層が形成された発光層、5はTa2O5等の
金属酸化物が発光層4に蒸着またはスパツタリン
グにより形成されると共に該発光層4を外気から
遮断する第二絶縁層、6は第二絶縁層5に取付け
られた背面電極である。
EXAMPLES Hereinafter, the present invention will be explained in detail based on illustrated examples. In FIG. 1, 1 is a glass substrate;
2 is a transparent electrode formed by vapor deposition or sputtering on a glass substrate 1 such as indium oxide (ITO), and 3 is a first electrode formed by vapor deposition or sputtering on a metal oxide such as Ta 2 O 5 . In the insulating layer 4, a phosphor such as ZnS is attached to the first insulating layer 3 by vapor deposition or sputtering, and then the surface is subjected to oxygen ion bombardment treatment by a method such as electric discharge in an oxygen atmosphere to form a thin oxide layer. 5 is a second insulating layer in which a metal oxide such as Ta 2 O 5 is formed by vapor deposition or sputtering on the light emitting layer 4 and shields the light emitting layer 4 from the outside air; 6 is a second insulating layer; A back electrode attached to layer 5.

本発明のEL素子は以上のように構成されてお
り、発光層4の表面はO2イオンボンバード処理
が施され、該表面の極めて薄い範囲は酸化されて
いるので、この上に形成されたTa2O5等の金属酸
化物である第二絶縁層5の付着力は著しく向上さ
れ、発光層4との間に剥離は生じない。従つて、
発光層4に対する絶縁効果は十分に確保され、
EL素子駆動時に不正常な放電は減少し、動作が
安定すると共に電気エネルギーの損失は低減す
る。また、発光層4と絶縁層5との付着力は強固
となつているので、機械的強度は向上され、発光
層4は外気から完全に遮断されているから雰囲気
に暴されることなく化学的にも安定する。更に、
従来の如く付着層を特別に設ける必要がないの
で、付着層によるインピーダンスはなくなるため
低電圧駆動が可能となり電力消費を低減でき、
EL素子製造に際しても工程の簡略化が図れる。
The EL element of the present invention is constructed as described above, and the surface of the light-emitting layer 4 is subjected to O 2 ion bombardment treatment, and since an extremely thin area of the surface is oxidized, Ta The adhesion of the second insulating layer 5, which is a metal oxide such as 2 O 5 , is significantly improved, and no peeling occurs between it and the light emitting layer 4. Therefore,
The insulation effect for the light emitting layer 4 is sufficiently ensured,
When driving an EL element, abnormal discharges are reduced, operation becomes stable, and electrical energy loss is reduced. Furthermore, since the adhesive force between the light emitting layer 4 and the insulating layer 5 is strong, the mechanical strength is improved, and since the light emitting layer 4 is completely shielded from the outside air, it is not exposed to the atmosphere and can be chemically removed. It is also stable. Furthermore,
Since there is no need to provide a special adhesion layer as in the past, there is no impedance due to the adhesion layer, making it possible to drive at low voltage and reduce power consumption.
The process for manufacturing EL elements can also be simplified.

第2図は他の実施例を示し、この実施例によれ
ば、第一絶縁層3を用いず、透明電極2上に発光
層4が形成され、その表面をO2イオンボンバー
ド処理後第二絶縁層5が形成されてなる一重絶縁
構造である。この場合、第一絶縁層3のみの一重
絶縁では発光層4は外気と接触してしまうので、
第二絶縁層が用いられる。
FIG. 2 shows another embodiment. According to this embodiment, a light emitting layer 4 is formed on a transparent electrode 2 without using a first insulating layer 3, and the surface thereof is subjected to O 2 ion bombardment treatment and then a second insulating layer 4 is formed on the transparent electrode 2. It has a single insulation structure in which an insulation layer 5 is formed. In this case, with single insulation of only the first insulating layer 3, the light emitting layer 4 will come into contact with the outside air.
A second insulating layer is used.

かかる一重絶縁構造では、発光層4は第二絶縁
層5に覆われて外気から完全に遮断され、しかも
両者間の付着力は強化されているので、第一絶縁
層3及び第二絶縁層5の双方でなる二重絶縁構造
の場合と同様に、発光層4と第二絶縁層5間の剥
離防止効果及び電気的、機械的、化学的安定性の
向上が図られ得る。また、第一絶縁層3は用用い
られず構造は簡単化されているので、製造工程の
簡略化はさらに助長される。
In such a single insulation structure, the light emitting layer 4 is covered with the second insulation layer 5 and is completely shielded from the outside air, and the adhesion between them is strengthened, so that the first insulation layer 3 and the second insulation layer 5 As in the case of a double insulating structure consisting of both, the effect of preventing peeling between the light emitting layer 4 and the second insulating layer 5 and the improvement of electrical, mechanical, and chemical stability can be achieved. Further, since the first insulating layer 3 is not used and the structure is simplified, the manufacturing process is further simplified.

以上の実施例においては、ガラス基板1側より
発光層4のEL光が取り出されるが、基本的構造
を維持しつつ、背面電極6側よりEL光を取り出
すことも可能である。この場合、例えば、ガラス
基板1としてセラミツク等の不透明基板を用い、
透明電極2を不透明電極に変え、背面電極6をI.
T.O.等でなる透明電極とする。さらにまた、両
電極1及び6双方を透明電極とすれば、EL素子
の表面両側より発光層4のEL光を取り出すこと
もできる。
In the above embodiment, the EL light of the light emitting layer 4 is extracted from the glass substrate 1 side, but it is also possible to extract the EL light from the back electrode 6 side while maintaining the basic structure. In this case, for example, an opaque substrate such as ceramic is used as the glass substrate 1,
Change the transparent electrode 2 to an opaque electrode, and change the back electrode 6 to I.
A transparent electrode made of TO or the like is used. Furthermore, if both electrodes 1 and 6 are transparent electrodes, the EL light of the light emitting layer 4 can be extracted from both sides of the surface of the EL element.

尚、Y2O3等でなる付着層を有する従来の構造
のものに本発明によるO2イオンボンバード処理
の施された発光層4を適用し得、付着層による発
光層4と第2絶縁層5との剥離防止効果を改善す
ることができる。
Note that the light emitting layer 4 subjected to O2 ion bombardment according to the present invention can be applied to a conventional structure having an adhesion layer made of Y 2 O 3 etc. It is possible to improve the peeling prevention effect with No. 5.

発明の効果 以上のように本発明に係るEL素子によれば、
発光層と絶縁層との剥離を完全に防止し得、発光
層の保護及び発光特性の向上が図られると共に、
構造的簡略化もなされひいては製造コストを低減
し得るので、実用的効果は極めて大である。
Effects of the Invention As described above, according to the EL element according to the present invention,
Peeling between the light emitting layer and the insulating layer can be completely prevented, and the light emitting layer is protected and the light emitting characteristics are improved.
Since the structure can be simplified and manufacturing costs can be reduced, the practical effect is extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る二重絶縁構造を有する
EL素子の部分断面図、第2図は本発明に係る一
重絶縁構造を有するEL素子の部分断面図である。 1…ガラス基板、2…透明電極、3…第一絶縁
層、4…発光層、5…第二絶縁層、6…背面電
極。
FIG. 1 has a double insulation structure according to the present invention.
FIG. 2 is a partial cross-sectional view of an EL element having a single insulation structure according to the present invention. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... First insulating layer, 4... Light emitting layer, 5... Second insulating layer, 6... Back electrode.

Claims (1)

【特許請求の範囲】 1 一対の電極板の間に発光層と該発光層を覆う
少なくとも一つの絶縁層とを含み、上記発光層の
表面を酸素イオンボンバード処理すると共に、上
記絶縁層を金属酸化物で形成したことを特徴とす
るEL素子。 2 前記金属酸化物がTa2O5である、特許請求の
範囲1に記載のEL素子。
[Scope of Claims] 1 A light emitting layer and at least one insulating layer covering the light emitting layer are provided between a pair of electrode plates, the surface of the light emitting layer is subjected to oxygen ion bombardment treatment, and the insulating layer is coated with a metal oxide. An EL element characterized by the following: 2. The EL device according to claim 1 , wherein the metal oxide is Ta2O5 .
JP59276548A 1984-12-28 1984-12-28 EL element Granted JPS61158688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59276548A JPS61158688A (en) 1984-12-28 1984-12-28 EL element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59276548A JPS61158688A (en) 1984-12-28 1984-12-28 EL element

Publications (2)

Publication Number Publication Date
JPS61158688A JPS61158688A (en) 1986-07-18
JPH0119757B2 true JPH0119757B2 (en) 1989-04-12

Family

ID=17571016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59276548A Granted JPS61158688A (en) 1984-12-28 1984-12-28 EL element

Country Status (1)

Country Link
JP (1) JPS61158688A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438477A (en) * 1977-09-01 1979-03-23 Toshiba Corp Error processing system for controller data setting switch

Also Published As

Publication number Publication date
JPS61158688A (en) 1986-07-18

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