JPH0120804B2 - - Google Patents
Info
- Publication number
- JPH0120804B2 JPH0120804B2 JP11487081A JP11487081A JPH0120804B2 JP H0120804 B2 JPH0120804 B2 JP H0120804B2 JP 11487081 A JP11487081 A JP 11487081A JP 11487081 A JP11487081 A JP 11487081A JP H0120804 B2 JPH0120804 B2 JP H0120804B2
- Authority
- JP
- Japan
- Prior art keywords
- view
- insulating substrate
- lead terminal
- sectional
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0504—Holders or supports for bulk acoustic wave devices
- H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【発明の詳細な説明】
本発明は、圧電振動子の支持構造の改良に関
し、より詳しくは、絶縁基板に形成した凹部内に
リード端子を配設して、そのリード端子に圧電振
動板を載置固着した圧電振動子の支持構造を対象
にした改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a support structure for a piezoelectric vibrator, and more specifically, a lead terminal is disposed in a recess formed in an insulating substrate, and a piezoelectric diaphragm is mounted on the lead terminal. This paper relates to improvements to support structures for piezoelectric vibrators that are fixed in place.
この種の支持構造は、機械的強度を得るために
圧電振動板とリード端子とに導電性接着剤を複数
個所にて塗布しているが、この接着力を強くさせ
て耐振動衝撃性を向上させた場合、支持系の本体
である絶縁基板の温度特性の影響を受けてしま
う。 In this type of support structure, conductive adhesive is applied to the piezoelectric diaphragm and lead terminals at multiple locations in order to obtain mechanical strength, but this adhesive strength is strengthened to improve vibration and shock resistance. If this is done, it will be affected by the temperature characteristics of the insulating substrate that is the main body of the support system.
この影響は、圧電振動子の本来の周波数温度特
性を変形させたり、接着個所をはく離させてしま
う欠点となつて現われる。接着個所のはく離は、
その接着が一般に圧電振動子本体を支持する機械
的接続の他に、励振電極への電気的接続をも兼ね
ていることから、電気的接続を故障に導き、発振
停止させることになる。 This effect appears as a disadvantage in that the original frequency-temperature characteristics of the piezoelectric vibrator is deformed or the bonded portions are peeled off. Peeling of the bonded area is
Since the adhesive generally serves not only as a mechanical connection to support the piezoelectric vibrator main body but also as an electrical connection to the excitation electrode, it may lead to failure of the electrical connection and stop oscillation.
本発明の目的は、上述したような欠点を除去さ
せ、機械的強度の向上と支持系の圧電振動子への
温度特性の影響の解消とを両立させ、更に組立作
業を容易にさせた圧電振動子の支持構造を提供す
ることである。 The object of the present invention is to provide a piezoelectric vibrator that eliminates the above-mentioned drawbacks, improves mechanical strength, eliminates the influence of temperature characteristics on the piezoelectric vibrator of the support system, and facilitates assembly work. It is to provide a supporting structure for the child.
このような目的を達成させるために本発明は、
絶縁基板の凹部のある底面にて露出させているリ
ード端子部分において、圧電振動板との導電接着
個所と、絶縁基板の貫通固定個所との間に切込み
を形成しているところに特徴がある。 In order to achieve such an objective, the present invention
A feature is that in the lead terminal portion exposed at the bottom surface of the insulating substrate with the recess, a notch is formed between the conductive bonding point with the piezoelectric diaphragm and the penetration fixing point of the insulating substrate.
第1図は、本発明を円板形状の水晶振動子に適
用した一実施例を示す。 FIG. 1 shows an embodiment in which the present invention is applied to a disk-shaped crystal resonator.
水晶振動板100は、第1図イの正面図及び同
図ロのA−A断面図で示されるように、ATカツ
ト水晶板を直径6mmに形成した円板であつて、そ
の両主平面上の中心付近に厚みすべり振動すべき
励振電極101,102を対向させて配置し、こ
の励振電極101,102から互に対向しないよ
うに逆向きで水晶振動板100の周辺まで引出電
極103,104を配置している。引出電極10
3,104の周端部分105,106は、水晶振
動板100の円周に沿つて円弧状に引き延ばされ
ている。なお、引出電極104は水晶振動板10
0の裏面から側面を通して表面の周端部分106
まで延在されている。以上の電極は、蒸着マスク
を使用して金、銀などの金属を真空蒸着により付
着される。 As shown in the front view of FIG. 1A and the A-A sectional view of FIG. Excitation electrodes 101 and 102 to be subjected to thickness-shear vibration are placed facing each other near the center of the oscillator, and extraction electrodes 103 and 104 are placed in opposite directions from the excitation electrodes 101 and 102 to the periphery of the crystal diaphragm 100 so as not to face each other. It is placed. Extracting electrode 10
The peripheral end portions 105 and 106 of 3 and 104 are extended in an arc shape along the circumference of the crystal diaphragm 100. Note that the extraction electrode 104 is connected to the crystal diaphragm 10.
0 from the back surface to the side surface and the peripheral edge portion 106 of the front surface.
It has been extended to The above electrodes are deposited by vacuum deposition of metals such as gold and silver using a deposition mask.
リード端子枠200は、第1図ハの正面図で示
されるようにプレス加工により一体形成されたも
のであり、その材質としては、後述する絶縁基板
300の熱膨脹係数αと大略等しい熱膨脹係数α
を有する金属、本例では黄銅(α=1.8〜2.3×
10-5/deg)を使用している。このリード端子枠
200は、2本のリード端子201,202を両
端の共通保持部203,204で連結され(完成
時は、2の共通保持部を除去する。)、リード端子
201,202は、前述した水晶振動板100を
載置する部分において、水晶振動板100と同様
に円弧状部分205,206と、その円弧状部分
205,206の両端付近に切込み207,20
8,209,210と、後述する絶縁基板300
内に貫通固定される位置にストツパー211,2
12,213,214を形成している。なお、共
通保持部203,204にて開けられた孔21
5,216は、リード端子枠200の位置合わせ
に使用される。 The lead terminal frame 200 is integrally formed by press working as shown in the front view of FIG.
metal, in this example brass (α=1.8~2.3×
10 -5 /deg). This lead terminal frame 200 has two lead terminals 201 and 202 connected by common holding parts 203 and 204 at both ends (the two common holding parts are removed when completed), and the lead terminals 201 and 202 are In the part where the crystal diaphragm 100 described above is mounted, similarly to the crystal diaphragm 100, there are arcuate portions 205, 206, and cuts 207, 20 near both ends of the arcuate portions 205, 206.
8, 209, 210 and an insulating substrate 300 to be described later
The stopper 211, 2 is inserted into the
12, 213, and 214 are formed. Note that the holes 21 made in the common holding parts 203 and 204
5, 216 is used for positioning the lead terminal frame 200.
絶縁基板300は、第1図ニの正面図及び同図
ホのB−B断面図に示すように、一方の主平面に
平面円形の凹部301を形成し、その凹部301
の底面において前述したリード端子201,20
2の円弧状部分205,206を露出させ、一方
の側面から他方の側面までリード端子201,2
02のストツパー211,212,213,21
4を埋込んで貫通固定している。絶縁基板300
の材質は、凝集力、接着力、たわみ性及び他樹脂
との相溶性などの特徴をもつた熱可塑性樹脂であ
つて、本例ではポリカーボネート(熱膨脹係数α
=2〜3×10-5/deg)を使用している。凹部3
01の内部には、後述するフタ500を載置する
段差面302,303がリード端子201,20
2の円弧状部分205,206における切込み2
07,208,209,210より先の端部にて
形成され、この端部を固定させている。絶縁基板
300の凹部301の上方には、その凹部301
の円周に沿つて外周縁付近の内側に溝304を形
成し、この溝304と凹部301の内側面との間
に溝304の底面から凹部301の上面305よ
り高く突出した、先端に行く程細くなつた凸部3
06を形成している。この凸部306の変形例と
しては、一定の厚みで突出したものであつてもよ
いが、その厚みは1〜2mm程度であることが好ま
しい。 As shown in the front view of FIG. 1D and the BB sectional view of FIG.
The lead terminals 201 and 20 described above are located on the bottom surface of the
Lead terminals 201, 2 are exposed from one side to the other.
02 stoppers 211, 212, 213, 21
4 is embedded and fixed through the hole. Insulating substrate 300
The material is a thermoplastic resin with characteristics such as cohesive strength, adhesive strength, flexibility, and compatibility with other resins. In this example, polycarbonate (thermal expansion coefficient α
= 2 to 3 x 10 -5 /deg). Recess 3
Inside the 01, stepped surfaces 302 and 303 on which a lid 500 (described later) is placed are connected to lead terminals 201 and 20.
Cut 2 in the arcuate portions 205 and 206 of 2
07, 208, 209, and 210, and this end is fixed. Above the recess 301 of the insulating substrate 300, the recess 301
A groove 304 is formed inside near the outer peripheral edge along the circumference of the groove 304, and between this groove 304 and the inner surface of the recess 301, a groove 304 is formed that protrudes higher than the top surface 305 of the recess 301 from the bottom surface of the groove 304 toward the tip. Thinner convex portion 3
06 is formed. As a modified example of the convex portion 306, it may be a protruding portion having a constant thickness, but the thickness is preferably about 1 to 2 mm.
前述した水晶振動板100は、第1図ヘの正面
図と同図トのC−C断面図で示されるように、リ
ード端子201,202の円弧状部分205,2
06の上に、その引出電極103,105の周端
部分105,106を位置合わせして、載置さ
れ、導電性接着剤401,402,403,40
4を前記周端部分105,106の両端と、その
両端付近のリード端子201,202の円弧状部
分205,206とに塗布して、結局水晶振動板
100は、リード端子201,202に4点で電
気的兼機械的に接着される。この接着個所40
1,402,403,404がリード端子20
1,202の円弧状部分205,206に形成し
た切込み207,208,209,210の間に
位置していることから、これら切込み207,2
08,209,210は、前述した絶縁基板30
0におけるリード端子201,202の貫通固定
個所と水晶振動板100の接着個所401,40
2,403,404との間にある。 As shown in the front view in FIG. 1 and the CC sectional view in FIG.
06, with the peripheral end portions 105, 106 of the extraction electrodes 103, 105 aligned, and the conductive adhesives 401, 402, 403, 40
4 is applied to both ends of the circumferential end portions 105, 106 and the arcuate portions 205, 206 of the lead terminals 201, 202 near both ends of the crystal diaphragm 100. It is electrically and mechanically bonded. This adhesive point 40
1,402,403,404 are lead terminals 20
These cuts 207, 2
08, 209, 210 are the aforementioned insulating substrates 30
Penetration fixing points of lead terminals 201, 202 and bonding points 401, 40 of crystal diaphragm 100 in 0
It is between 2,403,404.
フタ500は、第1図チの正面図及び同図リの
D−D断面図で示すように、前述した絶縁基板3
00の凹部301の内側面と嵌合する平面円形に
加工され、その材質は絶縁基板300と同様ポリ
カーボネート樹脂から成形されている。そして、
フタ500の円周に沿つて外周縁付近にも絶縁基
板300の溝304と対称的な溝501を形成
し、この溝501とフタ500の外側面との間
に、絶縁基板300の凸部306と同様、溝50
1の底面からフタ500の上面502より高く突
出した、先端に行く程細くなつた凸部503を形
成している。 As shown in the front view of FIG. 1H and the DD sectional view of FIG.
It is processed to have a circular plane shape that fits into the inner surface of the recess 301 of No. 00, and the material thereof is molded from polycarbonate resin like the insulating substrate 300. and,
A groove 501 symmetrical to the groove 304 of the insulating substrate 300 is formed along the circumference of the lid 500 near the outer periphery, and a convex portion 306 of the insulating substrate 300 is formed between the groove 501 and the outer surface of the lid 500. Similarly, groove 50
A convex portion 503 is formed that protrudes higher than the top surface 502 of the lid 500 from the bottom surface of the lid 500 and becomes thinner toward the tip.
次に、第1図ヌの正面図及び同図ルのE−E断
面図で示すように、フタ500を絶縁基板300
の凹部301内の段差面302,303に載置す
ることにより、絶縁基板300の凸部306の内
側面とフタ500の凸部503の外側面とが接
し、この互に接する部分を上面から熱板600を
当てて加熱し(加熱温度は絶縁基板30とフタ5
00の融点より30〜100deg高い温度が好ましく、
本例では300℃である。)、双方の凸部306,5
03を溶融する。この際、凸部306,503の
先端が細くなつた構造又はその変形例として比較
的細い厚み構造であることから、その先端部分の
熱容量が比較的少なく、容易に溶融させることが
でき、更に一度溶融が開始すると、その次の層
(下層)の凸部306,503の部分が次々と溶
融させる作用を起こし、第1図オの正面図及び同
図ワのF−F断面図に示すように溶融部分700
を拡大させる。この溶融部分700は、熱板60
0から解放させて室温放置により固着される。な
お、溶融時における熱板600との貼り付きを防
止するために、熱板600の当接部分にテフロン
コーテイング又は両者の間にテフロンなどの耐熱
性非粘着性のシートを介在させることは有効であ
る。 Next, as shown in the front view of FIG.
By placing it on the stepped surfaces 302 and 303 in the recess 301 of the insulating substrate 300, the inner surface of the protrusion 306 of the insulating substrate 300 and the outer surface of the protrusion 503 of the lid 500 come into contact with each other, and heat is applied to the mutually contacting portion from the upper surface. Heat the plate 600 (the heating temperature is the temperature between the insulating substrate 30 and the lid 5).
The temperature is preferably 30 to 100 degrees higher than the melting point of 00,
In this example, it is 300°C. ), both protrusions 306,5
Melt 03. At this time, since the tip of the convex portions 306, 503 has a tapered structure or a modified example thereof, a relatively thin thickness structure, the heat capacity of the tip portion is relatively small and can be easily melted. When melting begins, the convex portions 306 and 503 of the next layer (lower layer) act to melt one after another, as shown in the front view in Figure 1E and the FF cross-sectional view in Figure 1W. Melting part 700
Expand. This melted portion 700 is
It is fixed by releasing it from 0 and leaving it at room temperature. In addition, in order to prevent sticking to the hot plate 600 during melting, it is effective to coat the abutting portion of the hot plate 600 with Teflon or to interpose a heat-resistant non-adhesive sheet such as Teflon between the two. be.
第2図は、本発明を矩形板の水晶振動子に適用
した他の実施例を示し、本例の説明については、
前実施例に示した構成部分と同一機能のものは同
一記号を付すことをもつて代える。なお、第2図
イは水晶振動板を示す正面図、同図ロは前図のA
−A断面図、同図ハはリード端子枠を示す正面
図、同図ニはリード端子枠を貫通固定した絶縁基
板を示す正面図、同図ホは前図のB−B断面図、
同図ヘは水晶振動板をリード端子に載置して導電
接着した状態を示す正面図、同図トは前図のC−
C断面図、同図チはフタを示す正面図、同図リは
前図のD−D断面図、同図ヌはフタを絶縁基板の
段差面に載置した状態を示す正面図、同図ルは前
図のE−E断面図、同図オはフタと絶縁基板の凸
部を溶融した状態を示す正面図及び同図ワは前図
のF−F断面図である。 FIG. 2 shows another embodiment in which the present invention is applied to a rectangular plate crystal resonator.
Components having the same functions as those shown in the previous embodiment are replaced by the same symbols. In addition, Figure 2 A is a front view showing the crystal diaphragm, and Figure 2 B is a front view showing the crystal diaphragm.
- A sectional view, C is a front view showing the lead terminal frame, D is a front view showing the insulating board fixed through the lead terminal frame, E is a sectional view taken along line B-B in the previous figure,
Figure F is a front view showing the state in which the crystal diaphragm is placed on the lead terminal and conductively bonded, and Figure G is a front view showing the state in which the crystal diaphragm is placed on the lead terminal and conductively bonded.
C is a sectional view, C is a front view of the lid, R is a sectional view taken along line D-D in the previous figure, N is a front view of the lid placed on the stepped surface of the insulating substrate, and C is a front view of the lid. 1 is a sectional view taken along the line E-E in the previous figure, O is a front view showing a state in which the lid and the convex portion of the insulating substrate are melted, and Wa is a sectional view taken along the line FF in the previous figure.
本発明は、以上の実施例で示した構造に基づ
き、特に、水晶振動板を載置するリード端子に切
込みを形成し、この切込みの位置が絶縁基板の貫
通固定個所と水晶振動板の接着個所との間にある
ことから、水晶振動板の熱膨脹係数α=0.7〜1.3
×10-5/degよりも大きい絶縁基板の熱膨脹係数
α=2〜3×10-5/degの絶縁基板(本例:ポリ
カーボネート)を使用しても、両者の熱膨脹係数
の差による熱膨脹収縮による応力を切込み個所で
逃げさせることができる。それ故、本発明によれ
ば、水晶振動板をリード端子に強固に接着して
も、支持系の温度特性の影響を解消させ、導電接
着個所のはく離を防止するとともに、水晶振動子
本来の周波数温度特性を出現させることができ
る。また、水晶振動板の絶縁基板への組立作業
は、凹部内に載置することと、導電性接着剤を塗
布することだけで完了することから、非常に容易
であり、その自動化も可能である。更に、絶縁基
板とフタの材質としてポリカーボネートなどの熱
可塑性樹脂を使用し、前述したような溝と凸部を
上面に形成して、両者の接合個所の凸部を溶融す
ることにより、気密性を確保することができる。
この気密性については、100℃まで熱した水中に
入れてテストする、いわゆる煮沸試験に充分合格
している。熱可塑性樹脂の他の材質例としては、
エチレン−酢酸ビニルコポリマー(EVA)、ポリ
エチレンアタクチツクポリプロピレン(APP)、
エチレン−アクリル酸エチルコポリマー
(EEA)、ポリアミド、ポリエステル、ポリフエ
ニレンサルフアイド(PPS)、ポリフエニレンオ
キサイド(PPO)、ポリブチレンテレフタレート
(PBT)などが挙げられる。 The present invention is based on the structure shown in the above embodiments, and in particular, a notch is formed in the lead terminal on which the crystal diaphragm is placed, and the position of the notch is located between the penetration fixing point of the insulating substrate and the bonding point of the crystal diaphragm. Since it is between
Thermal expansion coefficient α of the insulating substrate is larger than ×10 -5 / deg. Stress can be released at the cut point. Therefore, according to the present invention, even if the crystal diaphragm is firmly bonded to the lead terminal, the influence of the temperature characteristics of the support system is eliminated, and the conductive bonded parts are prevented from peeling, and the original frequency of the crystal oscillator is It is possible to make temperature characteristics appear. Additionally, the assembly of the crystal diaphragm onto the insulating substrate is extremely easy and can be automated, as it can be completed by simply placing it in the recess and applying conductive adhesive. . Furthermore, thermoplastic resin such as polycarbonate is used as the material for the insulating substrate and the lid, and the grooves and protrusions described above are formed on the top surface, and the protrusions at the joints are melted to ensure airtightness. can be secured.
Regarding this airtightness, it has fully passed the so-called boiling test, which is tested by immersing it in water heated to 100 degrees Celsius. Other examples of thermoplastic resin materials include:
Ethylene-vinyl acetate copolymer (EVA), polyethylene-atactic polypropylene (APP),
Examples include ethylene-ethyl acrylate copolymer (EEA), polyamide, polyester, polyphenylene sulfide (PPS), polyphenylene oxide (PPO), and polybutylene terephthalate (PBT).
以上の実施例で圧電振動板として水晶振動板を
挙げたが、これ以外にも例えばタンタル酸リチウ
ム、ニオブ酸リチウム、圧電セラミツクでもよ
く、また切込みの形状としてスリツト状のものを
挙げたが、これ以外に半円、三角形、四角形その
他任意の形状であつてもよい。 Although a crystal diaphragm was used as the piezoelectric diaphragm in the above embodiments, other materials such as lithium tantalate, lithium niobate, and piezoelectric ceramics may also be used, and a slit-like shape was mentioned as the shape of the notch. In addition, it may be a semicircle, a triangle, a quadrilateral, or any other arbitrary shape.
第1図は本発明を円板の水晶振動子に適用した
一実施例を示し、同図イは水晶振動板を示す正面
図、同図ロは前図のA−A断面図、同図ハはリー
ド端子枠を示す正面図、同図ニはリード端子枠を
貫通固定した絶縁基板を示す正面図、同図ホは前
図のB−B断面図、同図ヘは水晶振動板をリード
端子に載置して導電接着した状態を示す正面図、
同図トは前図のC−C断面図、同図チはフタを示
す正面図、同図リは前図のD−D断面図、同図ヌ
はフタを絶縁基板の段差面に載置した状態を示す
正面図、同図ルは前図のE−E断面図、同図オは
フタと絶縁基板の凸部を溶融した状態を示す正面
図及び同図ワは前図のF−F断面図である。第2
図は、本発明を矩形板の水晶振動子に適用した他
の一実施例を示し、同図イは水晶振動板を示す正
面図、同図ロは前図のA−A断面図、同図ハはリ
ード端子枠を示す正面図、同図ニはリード端子枠
を貫通固定した絶縁基板を示す正面図、同図ホは
前図のB−B断面図、同図ヘは水晶振動板をリー
ド端子に載置して導電接着した状態を示す正面
図、同図トは前図のC−C断面図、同図チはフタ
を示す正面図、同図リは前図のD−D断面図、同
図ヌはフタを絶縁基板の段差面に載置した状態を
示す正面図、同図ルは前図のE−E断面図、同図
オはフタと絶縁基板の凸部を溶融した状態を示す
正面図及び同図ワは前図のF−F断面図である。
100……水晶振動板、205,206……リ
ード端子の露出部分、207,208,209,
210……切込み、300……絶縁基板、301
……凹部、401,402,403,404……
導電接着剤。
FIG. 1 shows an embodiment in which the present invention is applied to a disk-shaped crystal oscillator. FIG. is a front view showing the lead terminal frame, D is a front view showing the insulating substrate fixed through the lead terminal frame, E is a cross-sectional view taken along line B-B in the previous figure, and F is a front view showing the lead terminal of the crystal diaphragm. A front view showing the state where it is placed on and conductively bonded,
In the same figure, G is a cross-sectional view taken along the line C-C in the previous figure, C is a front view showing the lid, L is a cross-sectional view taken along D-D in the previous figure, and N in the same figure shows the lid placed on the stepped surface of the insulating substrate. Figure 1 is a front view showing the state in which the lid and the insulating substrate have been melted. FIG. Second
The figure shows another embodiment in which the present invention is applied to a rectangular plate crystal oscillator, where A is a front view of the crystal diaphragm, B is a sectional view taken along line A-A in the previous figure, and FIG. C is a front view showing the lead terminal frame, D is a front view showing the insulating board fixed through the lead terminal frame, E is a sectional view taken along line B-B in the previous figure, and F is a lead on the crystal diaphragm. A front view showing the state in which it is placed on the terminal and conductively bonded.D is a sectional view taken along the line C-C in the previous figure. , N in the same figure is a front view showing the state in which the lid is placed on the stepped surface of the insulating substrate, L in the same figure is a sectional view taken along line E-E in the previous figure, and O in the same figure is a state in which the convex parts of the lid and the insulating substrate are melted. A front view showing the same and a sectional view taken along line F-F in the previous figure. 100... Crystal diaphragm, 205, 206... Exposed portion of lead terminal, 207, 208, 209,
210...notch, 300...insulating substrate, 301
... recess, 401, 402, 403, 404...
conductive adhesive.
Claims (1)
前記絶縁基板の前記凹部の底面において一部が露
出し、かつ前記絶縁基板の一方の側面から他方の
側面まで貫通固定し、圧電振動板を前記リード端
子の露出部分の上に載置し、かつ前記リード端子
と導電接着し、かつ前記リード端子の露出部分に
おいて前記導電接着個所と前記絶縁基板の貫通固
定個所との間に切り込みを形成していることを特
徴とする圧電振動子の支持構造。1 An insulating substrate having a recessed cross section, a lead terminal is partially exposed at the bottom of the recess of the insulating substrate, and is fixed through the insulating substrate from one side surface to the other side, and the piezoelectric diaphragm is fixed to the insulating substrate. placed on the exposed portion of the lead terminal, conductively bonded to the lead terminal, and forming a cut in the exposed portion of the lead terminal between the conductive bonded portion and the through-fixed portion of the insulating substrate; A support structure for a piezoelectric vibrator.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11487081A JPS5815314A (en) | 1981-07-21 | 1981-07-21 | Support structure of piezoelectric vibrator |
| EP19820101485 EP0059447B1 (en) | 1981-02-28 | 1982-02-26 | Piezoelectric oscillator device |
| DE8282101485T DE3263495D1 (en) | 1981-02-28 | 1982-02-26 | Piezoelectric oscillator device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11487081A JPS5815314A (en) | 1981-07-21 | 1981-07-21 | Support structure of piezoelectric vibrator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5815314A JPS5815314A (en) | 1983-01-28 |
| JPH0120804B2 true JPH0120804B2 (en) | 1989-04-18 |
Family
ID=14648743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11487081A Granted JPS5815314A (en) | 1981-02-28 | 1981-07-21 | Support structure of piezoelectric vibrator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815314A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6025233U (en) * | 1983-07-27 | 1985-02-20 | 日本電波工業株式会社 | Crystal oscillator |
| JPS60108031U (en) * | 1983-12-27 | 1985-07-23 | 日本電波工業株式会社 | piezoelectric vibrator |
| JPS60108029U (en) * | 1983-12-23 | 1985-07-23 | 日本電波工業株式会社 | piezoelectric vibrator |
| GB2146839B (en) * | 1983-07-27 | 1987-04-01 | Nihon Dempa Kogyo Co | Piezoelectric resonator |
| JPS6079827U (en) * | 1983-11-07 | 1985-06-03 | 日本電波工業株式会社 | piezoelectric vibrator |
| JPS60108030U (en) * | 1983-12-27 | 1985-07-23 | 日本電波工業株式会社 | piezoelectric vibrator |
| JPS6119211A (en) * | 1984-07-05 | 1986-01-28 | Matsushita Electric Ind Co Ltd | Piezoelectric porcelain resonator |
-
1981
- 1981-07-21 JP JP11487081A patent/JPS5815314A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5815314A (en) | 1983-01-28 |
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