JPH0122986B2 - - Google Patents
Info
- Publication number
- JPH0122986B2 JPH0122986B2 JP58081887A JP8188783A JPH0122986B2 JP H0122986 B2 JPH0122986 B2 JP H0122986B2 JP 58081887 A JP58081887 A JP 58081887A JP 8188783 A JP8188783 A JP 8188783A JP H0122986 B2 JPH0122986 B2 JP H0122986B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- insulating sheet
- flat semiconductor
- insulating
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
この発明は半導体冷却装置に係り、特に半導体
素子の絶縁性、損失熱を効率良く伝達でき、組立
作業の容易化が図れる絶縁デイスクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor cooling device, and more particularly to an insulating disk that can efficiently transmit insulation and loss heat of semiconductor elements and facilitate assembly work.
従来この種の装置として第1図に示すものがあ
つた。図において、1aは平形半導体素子本体
(以下素子本体という)、2a,2bはこの素子本
体1aの陽極および陰極面に当接接続し電気を取
り出す端子板で、この端子板2a,2bと素子本
体1aとで平形半導体素子1を形成している。3
はこの平形半導体素子1と上記冷却ブロツク4と
を電気的に絶縁する絶縁シート、5は絶縁座、6
は圧接座、7はバネ板、8は締付ボルト、9はボ
ルト、10はこのボルトと圧接座6との間に配置
された金属ボールである。 A conventional device of this type is shown in FIG. In the figure, 1a is a flat semiconductor element body (hereinafter referred to as the element body), 2a and 2b are terminal plates that are connected to the anode and cathode surfaces of this element body 1a to take out electricity, and these terminal plates 2a and 2b and the element body. 1a to form a flat semiconductor element 1. 3
5 is an insulating sheet that electrically insulates the flat semiconductor element 1 and the cooling block 4; 5 is an insulating seat;
1 is a pressure contact seat, 7 is a spring plate, 8 is a tightening bolt, 9 is a bolt, and 10 is a metal ball disposed between this bolt and the pressure contact seat 6.
次の動作について説明する。 The following operation will be explained.
通常、平形半導体素子1に通電すると、この平
形半導体素子1の内部損失により熱が発生する。
この損失熱は上記平形半導体素子1の陽極および
陰極面である端子板2a,2bより熱放散される
ため、冷却ブロツク4を平形半導体素子1の両極
面か、いずれか一方に圧接接続して損失熱を空気
等の二次冷却媒体に熱交換する。この際、第1図
に示す絶縁シート3のない場合は、冷却ブロツク
4は上記平形半導体素子1に直接、圧接接続して
いるため、平形半導体素子1の電位を帯びる事に
なるので、電気絶縁劣化あるいは危険防止用に筐
体構造のキユービクル内に収納される場合が多か
つた。しかしキユービクル内に温度上昇を抑制す
るために、外気を取り入れる必要があり、保守、
点検等に問題があつた。そこで、最近、第1図に
示すように、平形半導体素子1と冷却ブロツク4
との電気的な絶縁には、筐体キユービクルの外部
に配置されている絶縁シートと同じ材質の絶縁シ
ート3で行う方式が行われている。この絶縁シー
ト3は電気的な絶縁と平形半導体素子1の損失熱
を効率良く冷却ブロツク4に伝達できる優れた材
質で、極薄形で、円形または四角形等のシート状
に形成することが必要である。 Normally, when current is applied to the flat semiconductor element 1, heat is generated due to internal loss of the flat semiconductor element 1.
Since this heat loss is dissipated from the terminal plates 2a and 2b, which are the anode and cathode surfaces of the flat semiconductor element 1, the cooling block 4 is press-connected to either the two pole surfaces of the flat semiconductor element 1, or one of them to reduce the loss. Heat is exchanged to a secondary cooling medium such as air. At this time, if there is no insulating sheet 3 as shown in FIG. 1, the cooling block 4 is directly press-contacted to the flat semiconductor element 1, so it will be charged with the potential of the flat semiconductor element 1. In order to prevent deterioration or danger, they were often housed in a cubicle with a housing structure. However, in order to suppress the temperature rise inside the cubicle, it is necessary to bring in outside air.
There was a problem with inspection, etc. Recently, as shown in FIG. 1, a flat semiconductor device 1 and a cooling block 4 have been developed.
For electrical insulation, an insulating sheet 3 made of the same material as the insulating sheet disposed outside the housing cubicle is used. This insulating sheet 3 is made of an excellent material that can provide electrical insulation and efficiently transmit heat loss from the flat semiconductor element 1 to the cooling block 4, and must be extremely thin and formed into a circular or rectangular sheet shape. be.
従来の半導体冷却装置は以上のように構成され
ているので、絶縁に際して極薄形の絶縁シート3
を冷却ブロツク4と平形半導体素子1との間に挿
入圧接しなければならず、冷却ブロツク4の圧接
面の面加工および組立作業、例えば平形半導体素
子1と絶縁シート3のセンター合せ、接触熱抵抗
を小さくするための導電性グリスの塗布などが非
常に困難であり、また絶縁シート3は極薄のため
クラツク防止のための注意などで取扱いが極めて
難しい等の欠点があつた。 Since the conventional semiconductor cooling device is configured as described above, an ultra-thin insulating sheet 3 is used for insulation.
must be inserted between the cooling block 4 and the flat semiconductor element 1 and pressure-welded, and surface processing and assembly work of the pressure-welding surface of the cooling block 4, such as center alignment of the flat semiconductor element 1 and the insulating sheet 3, contact thermal resistance. It is very difficult to apply conductive grease to reduce the size of the insulating sheet 3, and since the insulating sheet 3 is extremely thin, it is extremely difficult to handle it to prevent cracks.
この発明は上記のような従来のものの欠点を除
去するためになされたもので、絶縁シートの両圧
接面に銅、アルミニウム等のブロツクを例えばロ
ー付またハンダ付等により接着し、デイスク状に
一体に形成することにより組立作業性の向上及び
熱伝導性向上の信頼性が高い半導体冷却装置を提
供することを目的としている。 This invention was made in order to eliminate the drawbacks of the conventional products as described above, and consists of bonding blocks of copper, aluminum, etc. to both press-contact surfaces of an insulating sheet by brazing or soldering, etc., to form an integral disk-like structure. The object of the present invention is to provide a highly reliable semiconductor cooling device that improves assembly workability and thermal conductivity by forming a semiconductor cooling device.
以下、この発明の一実施例を図について説明す
る。第2図、第3図において、2は上述の絶縁シ
ートであつて例えばセラミツク等で形成されてい
る。11はこの絶縁シート2の一方の圧接面にロ
ー付またはハンダ付け等によつて固着された銅、
アルミニウム等のブロツク、19は絶縁シート2
の他方の圧接面にロー付または半田付によつて固
着されたブロツクで、このブロツク19は一端に
スナバーダイオード等を取付ける取付穴18が穿
設され、他端に平形半導体素子の陽極および陰極
面の電気取出し用ボルト穴20が穿設されてお
り、平形半導体素子の端子板として使用できるも
のである。12a,12bはロー付またはハンダ
付面、13はこのブロツク11,19に形成さ
れ、平形半導体素子1とのセンター合せ用穴であ
る。 An embodiment of the present invention will be described below with reference to the drawings. In FIGS. 2 and 3, reference numeral 2 denotes the above-mentioned insulating sheet, which is made of, for example, ceramic. Copper 11 is fixed to one pressure contact surface of the insulating sheet 2 by brazing or soldering,
Blocks such as aluminum, 19 is insulation sheet 2
This block 19 is fixed by brazing or soldering to the other press-contact surface of the block 19. One end of this block 19 has a mounting hole 18 for attaching a snubber diode, etc., and the other end has an anode and a cathode surface of a flat semiconductor element. A bolt hole 20 for electrical extraction is provided, and it can be used as a terminal plate for a flat semiconductor device. 12a and 12b are brazed or soldered surfaces, and 13 is a hole formed in the blocks 11 and 19 for centering with the flat semiconductor element 1.
以上の構成によれば、厚さの薄い絶縁シート2
とこれにロー付、ハンダ付け固着されたブロツク
11,19とによつて一体化した絶縁デイスクが
構成されることとなる。かかる構造によつて平形
半導体素子1と冷却ブロツク4との電気的な絶縁
および平形半導体素子1の損失熱の伝達を極めて
効率よく行うことができる。また、絶縁シート2
の厚みは1〜2mm程度であり、しかも平形半導体
素子1と冷却ブロツク4との間の圧接力は1000〜
4000Kg程度と極めて大きいために、従来は圧接面
への塵埃等の不純物の付着により絶縁シートが破
損したり、不純物が付着した絶縁シートの組合せ
に伴つて接触熱抵抗の増加などの欠点が生じてい
たが、絶縁シート2に銅、アルミニウム等のブロ
ツク11,19を固着一体化して絶縁デイスクを
形成したので、かかる問題は確実に解消できる。
さらに、上記ブロツク11,19にセンター合せ
用穴13を形成したので、組立作業時に従来のよ
うに絶縁シート2のセンター合せの困難、偏差、
捩れ等は生ずることなく、簡単に絶縁シート2の
挿着が行える。しかも、このセンター合せ用穴1
3は、絶縁シート2と上記ブロツク11,19と
をロー付またはハンダ付するとき、接触面の気泡
の逃げ口となり、密着性の良い接触面を得ること
ができ、このため、接触熱抵抗が低く、かつ熱伝
導性の良い絶縁デイスクを製作するのに役立つ。 According to the above configuration, the thin insulating sheet 2
An integrated insulating disk is constructed by the blocks 11 and 19 which are fixed thereto by brazing and soldering. With this structure, it is possible to electrically insulate the flat semiconductor element 1 and the cooling block 4 and to transfer heat loss from the flat semiconductor element 1 very efficiently. In addition, insulation sheet 2
The thickness of the device is approximately 1 to 2 mm, and the pressure force between the flat semiconductor element 1 and the cooling block 4 is approximately 1000 to 2 mm.
Because it is extremely large at approximately 4000 kg, conventionally there have been drawbacks such as damage to the insulation sheet due to the adhesion of impurities such as dust to the pressure welding surface, and an increase in contact thermal resistance due to the combination of insulation sheets with impurities attached. However, since the blocks 11, 19 made of copper, aluminum, etc. are fixed and integrated with the insulating sheet 2 to form the insulating disk, this problem can be reliably solved.
Furthermore, since the holes 13 for centering are formed in the blocks 11 and 19, it is difficult to center the insulating sheet 2 during assembly work, and deviations can be avoided.
The insulating sheet 2 can be easily inserted and attached without twisting or the like. Moreover, this center alignment hole 1
3, when brazing or soldering the insulating sheet 2 and the blocks 11 and 19, it becomes an escape port for air bubbles on the contact surface, and a contact surface with good adhesion can be obtained, so that the contact thermal resistance is reduced. It is useful for producing insulating disks that are low in temperature and have good thermal conductivity.
第4図は平形半導体装置の一部を構成する回路
中にこの発明を適用したものである。図におい
て、1a,1bは大電流を流す主サイリスタであ
つて、例えば1000Aクラスの平形半導体素子が用
いられている。14a,14bは主サイリスタ1
a,1bに逆並列に接続され、無効電流をバイパ
スする補助ダイオードであつて、例えば300Aク
ラスの平形半導体素子が用いられる。15a,1
5bはスナバ抵抗、16a,16bはスナバコン
デンサ、17a,17bはスナバダイオードであ
る。そして、このスナバダイオード17a,17
bのような比較的小容量の素子は損失熱も小さい
ので、上記実施例の絶縁シート2に接着された同
電位の銅材等に取付可能である。 FIG. 4 shows the present invention applied to a circuit constituting a part of a flat semiconductor device. In the figure, 1a and 1b are main thyristors through which a large current flows, and flat semiconductor elements of, for example, 1000 A class are used. 14a and 14b are the main thyristors 1
This is an auxiliary diode connected in antiparallel to a and 1b to bypass reactive current, and is a flat semiconductor element of, for example, 300A class. 15a,1
5b is a snubber resistor, 16a and 16b are snubber capacitors, and 17a and 17b are snubber diodes. And these snubber diodes 17a, 17
Since a relatively small capacitance element like b has a small loss of heat, it can be attached to a copper material of the same potential bonded to the insulating sheet 2 of the above embodiment.
以上のようにこの発明によれば、絶縁シートの
一方面に銅、アルミニウム等で、センター合せ用
穴が穿設されたブロツクを接着すると共に、他方
面に半導体素子の端子板となる銅、アルミニウム
等で、センター合せ穴が穿設されたブロツクをそ
れぞれ固着して一体化した絶縁デイスクを構成し
たので、絶縁デイスクと半導体素子との接触熱抵
抗が増加する恐れをなくし、よつて熱伝導率が飛
躍的に向上し、しかも組立作業等が極めて簡単と
なり、そのうえ絶縁シートの他方面に接着された
ブロツクは半導体素子の端子板として使用でき、
熱放散はさらに良好に行えるという効果がある。 As described above, according to the present invention, a block made of copper, aluminum, etc. with a hole for centering is adhered to one side of an insulating sheet, and a block made of copper, aluminum, etc., with a hole for centering is adhered to one side of the insulating sheet, and a block made of copper, aluminum, etc., which will become a terminal board for a semiconductor element is bonded to the other side of the insulating sheet. By fixing blocks with center alignment holes, etc., to form an integrated insulating disk, there is no risk of an increase in the contact thermal resistance between the insulating disk and the semiconductor element, and the thermal conductivity increases. This is a dramatic improvement, and the assembly work is extremely simple.Furthermore, the block glued to the other side of the insulating sheet can be used as a terminal board for semiconductor devices.
This has the effect of further improving heat dissipation.
第1図は従来の半導体冷却装置の側面図、第2
図はこの発明の一実施例の平面図、第3図は第2
図の―線縦断面図、第4図は一般的平形半導
体装置の一部を構成する半導体回路にこの発明を
適用した回路図である。
1……半導体素子(平形半導体素子)、3……
絶縁シート、4……冷却ブロツク、11,19…
…銅、アルミニウム等のブロツク。図中、同一符
号は同一又は相当部分を示す。
Figure 1 is a side view of a conventional semiconductor cooling device, Figure 2 is a side view of a conventional semiconductor cooling device;
The figure is a plan view of one embodiment of this invention, and FIG.
FIG. 4, which is a vertical cross-sectional view taken along the line - in the figure, is a circuit diagram in which the present invention is applied to a semiconductor circuit that constitutes a part of a general flat semiconductor device. 1... Semiconductor element (flat semiconductor element), 3...
Insulating sheet, 4...Cooling block, 11, 19...
...Blocks of copper, aluminum, etc. In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
を接触配置して冷却を行う半導体冷却装置におい
て、センター合せ用穴が穿設され、かついずれか
一方が上記半導体素子の端子板となる銅、アルミ
ニウム等のブロツクを絶縁シートの両面に半田付
またはロー付により接着して絶縁デイスクを形成
し、この絶縁デイスクを上記半導体素子と上記冷
却ブロツクとの間に圧接させたことを特徴とする
半導体冷却装置。1. In a semiconductor cooling device in which a cooling block is placed in contact with one pole surface of a semiconductor element for cooling, a hole for center alignment is drilled, and one of the holes is made of copper or aluminum that serves as the terminal plate of the semiconductor element. A semiconductor cooling device characterized in that blocks such as the above are bonded to both sides of an insulating sheet by soldering or brazing to form an insulating disk, and this insulating disk is pressed between the semiconductor element and the cooling block. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58081887A JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58081887A JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59205742A JPS59205742A (en) | 1984-11-21 |
| JPH0122986B2 true JPH0122986B2 (en) | 1989-04-28 |
Family
ID=13758953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58081887A Granted JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59205742A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355981A (en) * | 1976-10-30 | 1978-05-20 | Shinetsu Chemical Co | Method of heat sinking for electric circuit |
| JPS5722244U (en) * | 1980-07-10 | 1982-02-04 |
-
1983
- 1983-05-09 JP JP58081887A patent/JPS59205742A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59205742A (en) | 1984-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0111709B1 (en) | Telescoping thermal conduction element for cooling semiconductor devices | |
| CN100587945C (en) | Aluminum-ceramic composite components | |
| US4479140A (en) | Thermal conduction element for conducting heat from semiconductor devices to a cold plate | |
| JPH0231499B2 (en) | ||
| JP2000124398A (en) | Power semiconductor module | |
| KR20010071333A (en) | Thermally conductive mounting arrangement for securing an integrated circuit package to a heat sink | |
| US4314270A (en) | Hybrid thick film integrated circuit heat dissipating and grounding assembly | |
| US3274456A (en) | Rectifier assembly and method of making same | |
| JP2000349353A (en) | Peltier module and module for optical communication equipped with the same | |
| US3280383A (en) | Electronic semiconductor device | |
| JPH0122986B2 (en) | ||
| CN210897256U (en) | Power semiconductor device | |
| JP3651333B2 (en) | Semiconductor element mounting structure | |
| US7236367B2 (en) | Power electronics component | |
| JPH05211259A (en) | Semiconductor device | |
| JP2010114116A (en) | Semiconductor device for power | |
| JPH0815189B2 (en) | Method for manufacturing semiconductor device | |
| JPS627145A (en) | Power semiconductor device | |
| JPS6076179A (en) | thermoelectric conversion device | |
| JPH01201942A (en) | Semiconductor device | |
| JPH0289352A (en) | Semiconductor device | |
| JPH09260557A (en) | Semiconductor device and manufacturing method thereof | |
| JPH0650356U (en) | Water-cooled heat sink with heat pipe | |
| JP4640633B2 (en) | Ceramic circuit board and power module | |
| US6118660A (en) | Circuit module with improved heat transfer |