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JPH0129247B2 - - Google Patents
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JPH0129247B2 - - Google Patents

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Publication number
JPH0129247B2
JPH0129247B2 JP7186982A JP7186982A JPH0129247B2 JP H0129247 B2 JPH0129247 B2 JP H0129247B2 JP 7186982 A JP7186982 A JP 7186982A JP 7186982 A JP7186982 A JP 7186982A JP H0129247 B2 JPH0129247 B2 JP H0129247B2
Authority
JP
Japan
Prior art keywords
alloy
atomic
temperature
measured
electrical resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7186982A
Other languages
Japanese (ja)
Other versions
JPS58189528A (en
Inventor
Tetsuo Oka
Takeshi Masumoto
Akihisa Inoe
Yoshimi Takahashi
Akira Hoshi
Uichiro Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aisin Corp
Original Assignee
Aisin Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Co Ltd filed Critical Aisin Seiki Co Ltd
Priority to JP7186982A priority Critical patent/JPS58189528A/en
Publication of JPS58189528A publication Critical patent/JPS58189528A/en
Publication of JPH0129247B2 publication Critical patent/JPH0129247B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/006Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using superconductive elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は極低温を測定するための温度計に関す
るもので、更に詳述すれば絶体零度付近で超電導
状態に転移する非晶質合金を使用して、その電気
抵抗を測定することにより、極低温の温度を検出
するものである。 従来一般に使用されている極低温の温度計は
Ge半導体素子を使用した抵抗温度計であり、そ
の電気抵抗を四端子法で測定することにより温度
を間接的に検出するものであるが、このGe半導
体素子はカプセル内にヘリウムガスと共に封入し
てあるために、熱伝導率が小さくて正確な温度測
定が困難であり、また熱伝導率が小さい為に被測
定箇所に埋め込む必要があり、このために穴削方
法、充填剤の使用等の高度な技術を必要とし、更
にカプセル内の配線には熱の侵入を押える為に非
常に細いリード線を使用しているために、僅かな
過大電流でも切断し、機械的衝撃に非常に弱いと
いう欠点があつた。 本発明は前記欠点を解決するためのもので、温
度測定において、(1)測定精度の向上、(2)機構の簡
素化、(3)強度の向上、を計るためで極低温4〓〜
11〓の範囲内の特定の温度で超電導に転移する非
晶質合金の1種又は複数種を電気抵抗素子として
被測定箇所に設置し、前記素子上に設けた電極及
びリード線によりその電気抵抗値を測定するもの
である。被測定箇所が超電導転移温度に達した時
点で素子の電気抵抗は0となり、この変化を検出
することにより被測定箇所の温度が精密に検出で
きる。 前記非晶質合金について種々研究した結果、
Za―Mb―(Q+Al)c系超電導合金が最適であ
る。但し式中ZはZr、Hf、Tiのいずれか1種又
は2種以上で、a原子%、MはV、Nb、Taのい
ずれか1種又は2種以上でb原子%、QはSi、
Geのいずれか1種又は両種から成り、Q及びAl
の合計をc原子%含有することを示し、aは10〜
90、bは80以下、cは10〜25の範囲にあり、Qは
2原子%以上でAlは0.1〜15原子%でありa+b
+cは実質的に100であつて体積率で20%以上の
非晶質合金を含む合金、上記組成の(Q+Al)
の一部をC、B、Snのいずれか1種又は2種以
上で12原子%以下置換した体積率で20%以上の非
晶質合金を含む合金、及び前記合金を1273〓以
下、結晶化温度以上の温度範囲で熱処理を施した
やはり非晶質合金を体積率で20%以上を含む合金
を示す。尚この合金に関しては昭和57年3月26日
付、本発明者らの出願にかゝる特願昭57−049910
号、発明の名称「超急冷超電導合金」の明細書表
1〜表3に詳細に記載してある。前記Za―Mb―
(Q+Al)c系合金をその溶融状態から急速凝固
させることにより得られる合金は4〓〜11〓の範
囲のTc、高い常電導抵抗、小さい超電導転移巾、
及び優れたテープ成形性、高い強度と靭性を示
す。その他本発明の極低温用温度計の素子として
スパツター法により作製したMoSi系やMoC系合
金を用いることができる。例えばMo72Si28合金
は7.63K、Mo60Si40は5.58K、Mo78C22は6.97K、
Mo62C38は7.77KのTcを持つ。 次に上記非晶質合金を用いた極低温用温度計に
ついては、 (1) 被測定部材に直接に接触させて測定できるた
めに、熱伝達が大で正確な測定が可能である。 (2) 固体の被測定箇所に埋め込む必要がなく、穴
明け、充填剤の技術が不必要となる。 (3) 半導体素子の場合に比較して、細いリード線
を使う必要がなく、電流の制御に精度が不要で
あり、又機械的衝撃に対して強い。 (4) 非晶質合金よりなる素子毎の特性のバラツキ
が非常に少く、較正表が不必要である。 (5) 非常に低コストの極低温用の温度計である。 以下本発明にもとづく実施例について説明す
る。 前記Za―Mb―(Q+Al)c系合金をArガス
雰囲気中でレビテーシヨン炉を使用し溶融したの
ち、この溶湯を内径約0.5mmの石英管ノズル孔を
通して約4000r.p.mで回転する直径約200mmの銅製
ロールの表面に垂下供給して急速凝固させ、巾約
1mm、厚さ約20μmのリボン状の試料を作製し、
これらについて四端子法により超電導転移温度
(Tc)、その転移巾(△Tc)、常電導抵抗(ρn)
を測定した。その結果を表1に示す。
The present invention relates to a thermometer for measuring extremely low temperatures, and more specifically, it uses an amorphous alloy that transitions to a superconducting state near absolute zero and measures its electrical resistance. It detects low temperature. Cryogenic thermometers commonly used in the past are
This is a resistance thermometer that uses a Ge semiconductor element to indirectly detect temperature by measuring its electrical resistance using the four-terminal method.This Ge semiconductor element is sealed in a capsule with helium gas. Because of this, it has a low thermal conductivity, making it difficult to measure temperature accurately.Also, because the thermal conductivity is low, it is necessary to embed it in the location to be measured. Furthermore, because the wiring inside the capsule uses very thin lead wires to prevent heat from entering, it can break even at the slightest excessive current and is extremely susceptible to mechanical shock. It was hot. The present invention is intended to solve the above-mentioned drawbacks, and is intended to (1) improve measurement accuracy, (2) simplify the mechanism, and (3) improve strength in temperature measurement.
One or more types of amorphous alloys that transition to superconductivity at a specific temperature within the range of 11〓 are installed at the location to be measured as an electrical resistance element, and the electrical resistance is measured by electrodes and lead wires provided on the element. It measures the value. When the measured point reaches the superconducting transition temperature, the electrical resistance of the element becomes 0, and by detecting this change, the temperature of the measured point can be accurately detected. As a result of various studies on the amorphous alloy,
Za-Mb-(Q+Al)c superconducting alloy is optimal. However, in the formula, Z is any one or more of Zr, Hf, and Ti, and is a atomic %, M is one or more of V, Nb, and Ta, and is b atomic %, and Q is Si,
Consisting of one or both of Ge, Q and Al
Indicates that the total content of c atomic % is contained, and a is 10 to
90, b is 80 or less, c is in the range of 10 to 25, Q is 2 atomic % or more, Al is 0.1 to 15 atomic %, and a + b
+c is substantially 100 and is an alloy containing an amorphous alloy of 20% or more by volume, (Q+Al) with the above composition
Alloys containing an amorphous alloy with a volume fraction of 20% or more in which a part of is replaced with 12 atomic % or less of C, B, or Sn, and crystallized alloys with a volume ratio of 20% or less Indicates an alloy containing 20% or more of an amorphous alloy in terms of volume fraction, which has been heat-treated in a temperature range above this temperature. Regarding this alloy, patent application No. 57-049910 filed by the present inventors dated March 26, 1982,
The detailed description is given in Tables 1 to 3 of the specification of the invention titled "Ultra-quenched superconducting alloy". Said Za―Mb―
The alloy obtained by rapidly solidifying (Q+Al)c alloy from its molten state has a Tc in the range of 4 to 11, high normal conductivity resistance, small superconducting transition width,
and exhibits excellent tape formability, high strength and toughness. In addition, a MoSi-based or MoC-based alloy produced by a sputtering method can be used as the element of the cryogenic thermometer of the present invention. For example, Mo 72 Si 28 alloy is 7.63K, Mo 60 Si 40 is 5.58K, Mo 78 C 22 is 6.97K,
Mo 62 C 38 has a Tc of 7.77K. Next, regarding the cryogenic thermometer using the above-mentioned amorphous alloy, (1) Since it can be measured by directly contacting the member to be measured, heat transfer is large and accurate measurement is possible. (2) There is no need to embed it in the solid part to be measured, eliminating the need for drilling and filling techniques. (3) Compared to semiconductor devices, there is no need to use thin lead wires, no precision is required for current control, and it is resistant to mechanical shock. (4) There is very little variation in the characteristics of each element made of an amorphous alloy, and a calibration table is unnecessary. (5) This is an extremely low cost thermometer for cryogenic temperatures. Examples based on the present invention will be described below. After melting the Za-Mb-(Q+Al)c-based alloy in an Ar gas atmosphere using a levitation furnace, the molten metal is passed through a quartz tube nozzle hole with an inner diameter of about 0.5 mm and a tube with a diameter of about 200 mm rotating at about 4000 rpm. A ribbon-shaped sample with a width of about 1 mm and a thickness of about 20 μm was prepared by supplying it hanging onto the surface of a copper roll and rapidly solidifying it.
Using the four-probe method, we calculated the superconducting transition temperature (Tc), its transition width (△Tc), and the normal conductivity resistance (ρn).
was measured. The results are shown in Table 1.

【表】 次に具体的な温度計として1点検知式について
第1図〜第2図により説明すれば、1は被測定物
の極低温部材の一部で、2は非晶質超電導合金、
3はエポキシ系接着剤、4は低温ハンダ、5は充
填剤、6a,6bは銅よりなるリード線(直径約
0.2mm)であり、第2図は本実施例の電気抵抗―
温度のグラフを示す。この場合の超電導合金は表
―1のNo.1Zr80Nb5Al6Si9を使用しており、電気抵
抗値は4.21〓で0に転移する。 第3図〜第4図について多点検知式の実施例を
示す。11は被測定物の極低温部材の一部で、1
2は非晶質超電導合金、12aは表1のNo.1に示
すZr80Nb5Al6Si9、12bはNo.4のZr82.5Nb2.5
Al8Si7、12cはNo.2のZr80Nb5Al8Si7、12d
はNo.3のZr80Nb5Al9Si6である。13はエポキシ
系接着剤、14は低温ハンダ、15は充填剤、1
6a,16bは銅よりなるリード線(直径約0.2
mm)、17はポリイミド系樹脂である。尚12a,
12b,12c,12dは低温ハンダ14にて直
列に結線された素子であり被測定部材11に接着
剤13で貼付されている。 第4図は、第3図に示す多点検知式の温度計に
おいて、非晶質超電導合金の形状をすべて巾1.0
mm、長さ5.0mm、厚さ0.03mmとした場合の電気抵
抗―温度の関係をグラフで示したもので、電気抵
抗は4.21〓、4.35〓、4.56〓、4.71〓で急激に変
化し、4.21〓以下では0であり、この範囲での極
低温の温度を正確に検知できるものである。 以上本発明は絶体温度4〓〜11〓にて超電導に
転移する非晶質合金を1種又は複数種電気抵抗材
の板状として使用して被測定材の温度を測定する
もので構造が簡単で信頼性が極めて高い極低温用
温度計を提供するものである。
[Table] Next, a one-point detection type thermometer will be explained with reference to Figures 1 and 2. 1 is a part of the cryogenic member of the object to be measured, 2 is an amorphous superconducting alloy,
3 is an epoxy adhesive, 4 is a low-temperature solder, 5 is a filler, 6a and 6b are copper lead wires (diameter approx.
0.2mm), and Figure 2 shows the electrical resistance of this example.
Shows a graph of temperature. The superconducting alloy in this case is No.1Zr 80 Nb 5 Al 6 Si 9 shown in Table 1, and the electrical resistance value transitions to 0 at 4.21〓. An embodiment of a multi-point detection type is shown in FIGS. 3 and 4. 11 is a part of the cryogenic member of the object to be measured;
2 is an amorphous superconducting alloy, 12a is Zr 80 Nb 5 Al 6 Si 9 shown in No. 1 in Table 1, and 12b is Zr 82.5 Nb 2.5 shown in No. 4.
Al 8 Si 7 , 12c is No. 2 Zr 80 Nb 5 Al 8 Si 7 , 12d
is No. 3 Zr 80 Nb 5 Al 9 Si 6 . 13 is epoxy adhesive, 14 is low temperature solder, 15 is filler, 1
6a and 16b are copper lead wires (diameter approximately 0.2
mm), 17 is a polyimide resin. Note 12a,
Elements 12b, 12c, and 12d are connected in series with low-temperature solder 14, and are attached to the member to be measured 11 with adhesive 13. Figure 4 shows the shape of the amorphous superconducting alloy with a width of 1.0 mm in the multi-point detection thermometer shown in Figure 3.
This is a graph showing the relationship between electrical resistance and temperature when the length is 5.0 mm, the length is 5.0 mm, and the thickness is 0.03 mm. The value below is 0, and the extremely low temperature within this range can be accurately detected. As described above, the present invention measures the temperature of a material to be measured using one or more kinds of amorphous alloys that transition to superconductivity at an absolute temperature of 4 to 11 as a plate of electrically resistive material. The present invention provides a cryogenic thermometer that is simple and extremely reliable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図のイは本発明にもとづく一点検知式の温
度計の概略図でロは断面拡大図であり、第2図は
温度と電気抵抗との関係を示すグラフである。第
3図のイは本発明にもとづく多点検知式の温度計
の概略図で、ロ,イのはA〜A断面矢視図、ハは
非晶質金属とリード線との接着部の拡大図であ
る。第4図は多点検知式の温度計の温度と電気抵
抗との関係を示すグラフである。 1,11……被測定部材、2,12a〜12d
……非晶質超電導合金。
In FIG. 1, A is a schematic diagram of a single-point detection type thermometer according to the present invention, B is an enlarged cross-sectional view, and FIG. 2 is a graph showing the relationship between temperature and electrical resistance. Figure 3 A is a schematic diagram of a multi-point detection thermometer based on the present invention, B and A are cross-sectional views taken from A to A, and C is an enlarged view of the bonded part between the amorphous metal and the lead wire. It is a diagram. FIG. 4 is a graph showing the relationship between temperature and electrical resistance of a multi-point detection thermometer. 1, 11... Member to be measured, 2, 12a to 12d
...Amorphous superconducting alloy.

Claims (1)

【特許請求の範囲】[Claims] 1 絶対温度4゜〜11〓にて超電導に移転するZa―
Mb―(Q+Al)c系超電導合金、但しここにZ
はZr、Hf、Tiのいずれか1種又は2種以上でa
原子%、MはV、Nb、Taのいずれか1種又は2
種以上でb原子%、QはSi、Geのいずれか1種
又は両種から成り、Q及びAlの合計をc原子%
含有することを示し、aは10〜90、bは80以下、
cは10〜25の範囲、Qは2原子%以上、Alは0.1
〜15原子%であつてa+b+cは実質的に100で
あつて、この超電導合金をその体積率で20%以上
含む合金、更に上記組成の(Q+Al)の一部を
C、B、Snのいずれか1種又は2種以上で12原
子%以下置換したやはり体積率で20%以上含む合
金、及び、前記合金を1273〓以下、結晶化温度以
上で熱処理を施したやはり体積率で20%以上を含
む合金を板状、薄膜状に形成し、1種又は複数種
を電気抵抗材料として被測定物に接着し、その電
気抵抗を測定することにより、温度を測定する極
低温用温度計。
1 Za transfers to superconductivity at absolute temperature of 4° to 11゜
Mb-(Q+Al)c-based superconducting alloy, where Z
is one or more of Zr, Hf, and Ti.
Atomic %, M is any one or two of V, Nb, and Ta
Species or more are b atomic %, Q consists of one or both of Si and Ge, and the total of Q and Al is c atomic %
Indicates that it contains, a is 10 to 90, b is 80 or less,
c is in the range of 10 to 25, Q is 2 atomic % or more, Al is 0.1
~15 atomic %, a + b + c is substantially 100, and an alloy containing this superconducting alloy in a volume fraction of 20% or more, and furthermore, a part of (Q + Al) of the above composition is replaced with either C, B, or Sn. Alloys containing 12 atomic % or less of one or more types substituted with a volume fraction of 20% or more, and alloys containing 20% or more of a volume fraction of the above alloys that have been heat-treated at a temperature of 1273 or less and above the crystallization temperature. A cryogenic thermometer that measures temperature by forming an alloy into a plate shape or a thin film shape, adhering one or more kinds of them to an object to be measured as an electrical resistance material, and measuring the electrical resistance.
JP7186982A 1982-04-28 1982-04-28 Thermometer for cryogenic temperature Granted JPS58189528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7186982A JPS58189528A (en) 1982-04-28 1982-04-28 Thermometer for cryogenic temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7186982A JPS58189528A (en) 1982-04-28 1982-04-28 Thermometer for cryogenic temperature

Publications (2)

Publication Number Publication Date
JPS58189528A JPS58189528A (en) 1983-11-05
JPH0129247B2 true JPH0129247B2 (en) 1989-06-08

Family

ID=13472948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7186982A Granted JPS58189528A (en) 1982-04-28 1982-04-28 Thermometer for cryogenic temperature

Country Status (1)

Country Link
JP (1) JPS58189528A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2523130B2 (en) * 1987-06-04 1996-08-07 住友電気工業株式会社 Temperature controller using superconductor
JP5331649B2 (en) * 2009-10-22 2013-10-30 ジャパンスーパーコンダクタテクノロジー株式会社 Superconducting magnet device and initial cooling method for superconducting coil

Also Published As

Publication number Publication date
JPS58189528A (en) 1983-11-05

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