JPH0131689B2 - - Google Patents
Info
- Publication number
- JPH0131689B2 JPH0131689B2 JP56150942A JP15094281A JPH0131689B2 JP H0131689 B2 JPH0131689 B2 JP H0131689B2 JP 56150942 A JP56150942 A JP 56150942A JP 15094281 A JP15094281 A JP 15094281A JP H0131689 B2 JPH0131689 B2 JP H0131689B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- auxiliary body
- wiring conductor
- wire
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
- H10W72/07532—Compression bonding, e.g. thermocompression bonding
- H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/381—Auxiliary members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明は、基板上に固着された半導体素子への
配線が基板上に設けられた配線導体と半導体素子
チツプの電極との直接の接続ならびに接続導線に
よる接続によつて行われる複合集積回路に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention provides wiring to a semiconductor element fixed on a substrate by direct connection between a wiring conductor provided on the substrate and an electrode of a semiconductor element chip, and connection by a connecting conductor. Concerning complex integrated circuits.
複合集積回路の配線導体は、例えばセラミツク
基板に導体を印刷焼成するか、あるいは金属基板
に絶縁して接着された金属箔をエツチングするこ
となどにより形成される。第1図は後者の例を示
し、アルミニウムのような良熱伝導性金属基板1
の上に絶縁性接着剤層2を介して銅箔3を貼着
し、銅箔3の上にアルミニウム線のワイヤボンデ
イングが可能な、例えば金あるいはニツケルのめ
つき層4を設けた後、エツチング法により所望の
配線パターンを形成する。あるいは銅箔3を所望
のパターンにエツチングしたのち、接続に必要な
場所のみに部分めつきを施してもよい。めつき層
4の上にはんだ層5を介して半導体素子チツプ6
を固定し、その上面のアルミニウム電極と別の配
線導体のめつき層41とをアルミニウムの接続導
線7の超音波振動法によるワイヤボンデイングに
よつて接続する。半導体素子チツプ6がパワート
ランジスタチツプのような放熱量の大きなものの
場合には、めつき層4の上に金属の放熱体8をは
さんでチツプ6をそれぞれはんだ層5を用いて固
着する。そして同様にアルミニウム線7のワイヤ
ボンデイングにより露出した配線導体のめつき層
41とチツプ6のアルミニウム電極と接続する。 The wiring conductors of a composite integrated circuit are formed, for example, by printing and firing a conductor on a ceramic substrate, or by etching a metal foil insulated and bonded to a metal substrate. Figure 1 shows an example of the latter, with a metal substrate 1 having good thermal conductivity such as aluminum.
A copper foil 3 is adhered thereon via an insulating adhesive layer 2, and a plating layer 4 of, for example, gold or nickel, which allows wire bonding of aluminum wires, is provided on the copper foil 3, and then etched. A desired wiring pattern is formed by a method. Alternatively, after etching the copper foil 3 into a desired pattern, partial plating may be applied only to the areas necessary for connection. Semiconductor chip 6 is placed on plating layer 4 via solder layer 5.
is fixed, and the aluminum electrode on its upper surface and the plating layer 41 of another wiring conductor are connected by wire bonding using the ultrasonic vibration method of the aluminum connecting conductor 7. If the semiconductor element chip 6 is one that dissipates a large amount of heat, such as a power transistor chip, a metal heat radiator 8 is sandwiched over the plating layer 4, and the chips 6 are fixed using the solder layer 5. Similarly, by wire bonding the aluminum wire 7, the exposed plating layer 41 of the wiring conductor is connected to the aluminum electrode of the chip 6.
しかしこのような複合集積回路においては、ア
ルミニウム線7を半導体素子チツプ6のアルミニ
ウム電極と銅箔3の上のAuあるいはNiめつき層
41とにワイヤボンデイングしなければならず、
双方の材質、表面状態が異るため、最適ボンデイ
ングを行うためにはそれぞれのボンデイング条件
を調整する面倒がある。同じ材質にするために銅
箔3の上にAlめつきを施すことは技術的に難し
い。また放熱体8を用いるときは、チツプ6の上
の電極面と配線導体上のめつき層41の面との間
に段差を生ずるため、アルミニウム線7が放熱体
8の側面に接触して短絡する虞があり、信頼性が
十分でない。 However, in such a composite integrated circuit, the aluminum wire 7 must be wire-bonded to the aluminum electrode of the semiconductor element chip 6 and the Au or Ni plating layer 41 on the copper foil 3.
Since the materials and surface conditions of both are different, it is troublesome to adjust the bonding conditions for each in order to perform optimal bonding. It is technically difficult to apply Al plating on the copper foil 3 to make the same material. Furthermore, when the heat sink 8 is used, a step is created between the electrode surface on the chip 6 and the surface of the plating layer 41 on the wiring conductor, so the aluminum wire 7 comes into contact with the side surface of the heat sink 8, causing a short circuit. There is a risk that this may occur, and the reliability is not sufficient.
本発明はこのような欠点を除去し、導線による
接続が容易で、信頼性の高い複合集積回路を提供
することを目的とする。 It is an object of the present invention to eliminate such drawbacks and provide a highly reliable composite integrated circuit that can be easily connected by conductive wires.
この目的は、半導体素子チツプのアルミニウム
電極が、基板上に設けられた配線導体の上に固着
される補助体の上面とアルミニウム線によつて接
続される複合集積回路であつて、前記補助体はア
ルミニウムあるいはアルミニウム合金からなり、
配線導体上に固定される側が該アルミニウムある
いはアルミニウム合金の厚さより薄い銅めつきが
されることによつて達成される。 This object is a composite integrated circuit in which an aluminum electrode of a semiconductor element chip is connected by an aluminum wire to the upper surface of an auxiliary body fixed on a wiring conductor provided on a substrate, the auxiliary body being Made of aluminum or aluminum alloy,
This is achieved by plating the side fixed onto the wiring conductor with copper that is thinner than the thickness of the aluminum or aluminum alloy.
以下、図を引用して本発明の実施例について説
明する。第2図において第1図と共通の部分には
同一の符号が付されている。基板1上の配線パタ
ーンを形成する銅箔3の上にはめつき層4を設け
ず、半導体素子チツプ6は銅箔3に直接はんだ層
5を介して固着される。このチツプ6の上部のア
ルミニウム電極と接続されるべき配線導体の場所
には、補助体9がはんだ層5によつてろう付けさ
れる。補助体9はチツプ6の電極の材料と同種の
アルミニウムあるいはアルミニウム合金からなる
が、第3図に示すようにアルミニウム板10の一
面に銅めつき層11を有する。銅めつき層11は
めつきで形成されるのでアルミニウム板10の厚
さより薄いが、容易にめつき層11の側で銅箔3
とはんだ付けできる。ついで、アルミニウム線7
の超音波振動によるワイヤボンデイングによりチ
ツプ6の上面のアルミニウム電極と補助体9の上
側のアルミニウム面とを接続する。接続部が双方
ともアルミニウムであるので、ボンデイングは同
じ条件で容易に行うことができる。半導体素子の
放熱量が多く、放熱体8を介して配線導体に固着
するときは、素子チツプ6の上部電極と接続され
る配線導体の場所に、放熱体8の厚さに匹適する
厚さの補助体91をろう付けする。それによりア
ルミニウム線7による接続は、同種の材料に対し
ほぼ同一水平面内において行うことができる。従
つてアルミニウム線7の長さは最短となり、放熱
体8の側面にアルミニウム線が触れる虞がなく、
短絡が起きない。 Embodiments of the present invention will be described below with reference to the drawings. In FIG. 2, parts common to those in FIG. 1 are given the same reference numerals. No plating layer 4 is provided on the copper foil 3 forming the wiring pattern on the substrate 1, and the semiconductor element chip 6 is directly fixed to the copper foil 3 via the solder layer 5. An auxiliary body 9 is brazed with a solder layer 5 at the location of the wiring conductor to be connected to the aluminum electrode on the upper part of the chip 6. The auxiliary body 9 is made of the same kind of aluminum or aluminum alloy as the material of the electrodes of the chip 6, but has a copper plating layer 11 on one side of an aluminum plate 10, as shown in FIG. Since the copper plating layer 11 is formed by plating, it is thinner than the thickness of the aluminum plate 10, but the copper foil 3 is easily formed on the side of the plating layer 11.
It can be soldered. Next, aluminum wire 7
The aluminum electrode on the top surface of the chip 6 and the aluminum surface on the top side of the auxiliary body 9 are connected by wire bonding using ultrasonic vibration. Since both connections are made of aluminum, bonding can be easily performed under the same conditions. When a semiconductor element dissipates a large amount of heat and is fixed to a wiring conductor via a heat sink 8, a layer with a thickness comparable to the thickness of the heat sink 8 is placed on the wiring conductor connected to the upper electrode of the element chip 6. The auxiliary body 91 is brazed. Thereby, the connection by the aluminum wire 7 can be made to the same type of material in approximately the same horizontal plane. Therefore, the length of the aluminum wire 7 is the shortest, and there is no possibility that the aluminum wire will touch the side surface of the heat sink 8.
No short circuit occurs.
本発明によれば配線導体の上に高価なAuめつ
きのようなめつき層を設ける必要がなく、接続場
所にのみ補助体を設けるので最小限の材料です
む。また補助体はアルミニウムが主体であるの
で、軽いとともにアルミニウム板10の側面には
んだが付着しないのでボンデイング面への半田の
はい上がりやフラツクスの付着が生じず、ボンデ
イングが的確に行える。なお、本発明は上述の金
属基板の複合集積回路に限らず、セラミツク基板
に印刷焼成導体により配線するものにて適用でき
る。 According to the present invention, there is no need to provide an expensive plating layer such as gold plating on the wiring conductor, and since an auxiliary body is provided only at the connection location, the minimum amount of material is required. Furthermore, since the auxiliary body is mainly made of aluminum, it is light and the solder does not adhere to the side surfaces of the aluminum plate 10, so that solder does not creep up or flux adheres to the bonding surface, and bonding can be performed accurately. The present invention is not limited to the above-described composite integrated circuit on a metal substrate, but can also be applied to a ceramic substrate in which wiring is provided using printed and fired conductors.
以上述べたように、本発明は複合集積回路の基
板上に固定された半導体素子チツプのアルミニウ
ム電極とアルミニウムあるいはアルミニウム合金
の補助体を用いて、同種材料間をアルミニウム線
により接続するものであり、導線の固着が同一条
件でできるため接続作業が容易で信頼性が高く、
また放熱体使用の素子との接続が同一水平面内で
できるような厚さの補助体を用いることもできる
ので短絡の防止が可能であるなど、得られる効果
は極めて大きい。 As described above, the present invention uses an aluminum electrode of a semiconductor element chip fixed on a substrate of a composite integrated circuit and an auxiliary body of aluminum or aluminum alloy, and connects similar materials with an aluminum wire. Since the conductors can be fixed under the same conditions, connection work is easy and reliable.
Further, since it is possible to use an auxiliary body having such a thickness that connection with the element using the heat sink can be made in the same horizontal plane, short circuits can be prevented, and the effects obtained are extremely large.
第1図は従来の複合集積回路の一例の要部の断
面図、第2図は本発明の一実施例の要部断面図、
第3図はその補助体の一実施例の断面図である。
1……金属基板、2……絶縁性接着剤層、3…
…銅箔、5……はんだ層、6……半導体素子チツ
プ、7……接続導線、9,91……補助体、10
……アルミニウム板、11……銅めつき層。
FIG. 1 is a sectional view of a main part of an example of a conventional composite integrated circuit, FIG. 2 is a sectional view of a main part of an embodiment of the present invention,
FIG. 3 is a sectional view of one embodiment of the auxiliary body. 1... Metal substrate, 2... Insulating adhesive layer, 3...
...Copper foil, 5...Solder layer, 6...Semiconductor element chip, 7...Connection conductor, 9, 91...Auxiliary body, 10
...Aluminum plate, 11...Copper plating layer.
Claims (1)
板上に設けられた配線導体の上に固着される補助
体の上面とアルミニウム線によつて接続される複
合集積回路であつて、前記補助体はアルミニウム
あるいはアルミニウム合金からなり、配線導体上
に固定される側が該アルミニウムあるいはアルミ
ニウム合金の厚さより薄い銅めつきがされている
ことを特徴とする複合集積回路。1 A composite integrated circuit in which an aluminum electrode of a semiconductor element chip is connected by an aluminum wire to the upper surface of an auxiliary body fixed on a wiring conductor provided on a substrate, and the auxiliary body is made of aluminum or aluminum. A composite integrated circuit made of an alloy, characterized in that the side fixed onto the wiring conductor is plated with copper which is thinner than the thickness of the aluminum or aluminum alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150942A JPS5852836A (en) | 1981-09-24 | 1981-09-24 | Compound integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150942A JPS5852836A (en) | 1981-09-24 | 1981-09-24 | Compound integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5852836A JPS5852836A (en) | 1983-03-29 |
| JPH0131689B2 true JPH0131689B2 (en) | 1989-06-27 |
Family
ID=15507779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56150942A Granted JPS5852836A (en) | 1981-09-24 | 1981-09-24 | Compound integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852836A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151039A (en) * | 1982-03-04 | 1983-09-08 | Denki Kagaku Kogyo Kk | Hybrid integrated circuit substrate |
| JPS6045089A (en) * | 1983-08-22 | 1985-03-11 | 松下電器産業株式会社 | Board for circuit wiring |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317747A (en) * | 1976-08-02 | 1978-02-18 | Sasaki Mooru Kk | Natural light inlet tube |
| JPS5396668A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Wire bonding method and auxiliary plate for the same |
| JPS5396667A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Wire bonding method |
| JPS55158654A (en) * | 1979-05-30 | 1980-12-10 | Aichi Steel Works Ltd | Manufacture of heat sink in aluminum |
| JPS5610941A (en) * | 1979-07-06 | 1981-02-03 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5623763A (en) * | 1979-08-04 | 1981-03-06 | Aichi Steel Works Ltd | Aluminum heat sink and manufacture of semiconductor device |
-
1981
- 1981-09-24 JP JP56150942A patent/JPS5852836A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5852836A (en) | 1983-03-29 |
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