JPH0132652B2 - - Google Patents
Info
- Publication number
- JPH0132652B2 JPH0132652B2 JP56097729A JP9772981A JPH0132652B2 JP H0132652 B2 JPH0132652 B2 JP H0132652B2 JP 56097729 A JP56097729 A JP 56097729A JP 9772981 A JP9772981 A JP 9772981A JP H0132652 B2 JPH0132652 B2 JP H0132652B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- amorphous silicon
- mixture
- reaction
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Description
【発明の詳細な説明】
この発明はアモルフアス・シリコン膜の製造方
法に係り、特に化学蒸着（CVD）法によつてア
モルフアス・シリコン膜を製造する方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an amorphous silicon film, and more particularly to a method of manufacturing an amorphous silicon film by a chemical vapor deposition (CVD) method.
アモルフアス・シリコンは太陽電池に用いられ
る他、MOSのような固体装置に形成されたアモ
ルフアス・シリコンからなるパツシベイシヨン膜
は水分および移動性イオンの両方に起因する環境
汚染の悪影響による腐蝕および装置劣化を防止す
ることによつて固体装置の信頼性を増大させる。 In addition to being used in solar cells, amorphous silicon is used in solid-state devices such as MOS devices to prevent corrosion and device deterioration due to the negative effects of environmental pollution caused by both moisture and mobile ions. This increases the reliability of solid-state devices.
従来、シラン（SiH4、SiHCl3等）ガスと不活
性ガス（Ar等）との混合物または、シランと導
電型決定不純物源供給ガスとしてのシボラン
（B2H6）、ホスフイン（PH3）ガス等と不活性ガス
との混合物のプラズマ化学反応を利用して低温プ
ラズマ化学アモルフアス・シリコン膜が製造され
ている。プラズマ化学反応では励起状態の分子あ
るいは原子の他にイオンおよび電子が同時に発生
し、半導体装置の表面に放射線損傷を来たすとい
う欠点があつた。 Conventionally, a mixture of silane (SiH 4 , SiHCl 3, etc.) gas and an inert gas (Ar, etc.), or silane and siborane (B 2 H 6 ) or phosphine (PH 3 ) gas as a conductivity type determining impurity source supply gas has been used. Low-temperature plasma chemical amorphous silicon films have been produced using plasma chemical reactions of mixtures of amorphous silicon and an inert gas. Plasma chemical reactions have the disadvantage that, in addition to molecules or atoms in an excited state, ions and electrons are simultaneously generated, causing radiation damage to the surface of semiconductor devices.
従つて、この発明の目的は固体装置に形成する
アモルフアス・シリコン層として、放射線損傷を
アモルフアス・シリコン膜を製造するための改良
した方法を提供することにある。 SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an improved method for producing radiation-damaged amorphous silicon films for use as amorphous silicon layers in solid-state devices.
本発明者は、上記目的を達成するとともに従来
方法の欠点を改善するために、シランを含有する
混合物を300℃以下常温までの温度で反応させる
光化学反応を用いて低温アモルフアス・シリコン
膜を蒸着させる方法を開発した。 In order to achieve the above object and improve the shortcomings of the conventional methods, the present inventors deposited a low-temperature amorphous silicon film using a photochemical reaction in which a mixture containing silane is reacted at a temperature of 300°C or below and room temperature. developed a method.
所定波長における光子の吸収に対する上記反応
体の感光度を増加させるために上記反応体混合物
に、Xe等の不活性ガスを導入する。 An inert gas, such as Xe, is introduced into the reactant mixture to increase the sensitivity of the reactant to absorption of photons at a given wavelength.
ついで、上記感光化反応混合物を充分な量の光
子エネルギーに暴露し、反応混合物中の分子を活
性状態に励起して光化学反応を誘起させ所定の温
度に加熱されている基板の界面にアモルフアス・
シリコン膜を生成させる。基板上に蒸着したアモ
ルフアス・シリコン膜は実質的にピンホールがな
く、水分および移動性イオンに対し不透過性であ
る。 The photosensitizing reaction mixture is then exposed to a sufficient amount of photon energy to excite the molecules in the reaction mixture to an active state and induce a photochemical reaction, thereby depositing amorphous amorphous atom at the interface of the substrate heated to a predetermined temperature.
Generate a silicon film. The amorphous silicon film deposited on the substrate is substantially pinhole-free and impermeable to moisture and mobile ions.
上記方法は添付の第１図に示すような装置でお
こなうことができる。第１図において、石英製反
応室１はガス輸送ライン２、コツク３およびフロ
メーター４に接続している。基板５を300℃以下
の温度に加熱するためのヒーター６が反応室１内
に設置されている。反応室１の外周を取巻いて
2537Åの光子エネルギーを供給するための手段７
が設置されている。 The above method can be carried out in an apparatus such as that shown in the attached FIG. 1. In FIG. 1, a quartz reaction chamber 1 is connected to a gas transport line 2, a tank 3 and a flow meter 4. A heater 6 for heating the substrate 5 to a temperature of 300° C. or lower is installed in the reaction chamber 1. Surrounding the outer periphery of reaction chamber 1
Means 7 for supplying photon energy of 2537 Å
is installed.
図示のように、圧力容器等からのSiH4、
B2H6、PH3、Xe等のガスはフロメーター４によ
り調整され、コツク３を通してガス輸送ラインに
供給される。 As shown, SiH 4 from a pressure vessel, etc.
Gases such as B 2 H 6 , PH 3 , and Xe are adjusted by a flow meter 4 and supplied to the gas transport line through the tank 3.
反応室１内の真空度は排ガスパイプ８に取付け
られたコツク９によつて調整される。 The degree of vacuum within the reaction chamber 1 is adjusted by a cock 9 attached to the exhaust gas pipe 8.
SiH4は2200Å以下の波長の紫外（UV）線を吸
収する。これら反応体または感光剤によつて吸収
された紫外線だけが光化学反応を誘起する。光化
学反応用のUV光の最も適した供給源は石英水銀
アークランプである。 SiH4 absorbs ultraviolet (UV) radiation at wavelengths below 2200 Å. Only ultraviolet light absorbed by these reactants or photosensitizers induces photochemical reactions. The most suitable source of UV light for photochemical reactions is a quartz mercury arc lamp.
本発明者は気相化学反応を感光化する好都合な
手段の反応系にXe等の不活性ガスを添加するこ
とにより、この反応系の不活性ガスの共鳴放射線
で照射する方法であることを見い出した。この放
射線のほとんど全てが反応系に含まれているXe
等の不活性ガスによつて吸収される。 The present inventor has discovered that a convenient means of photosensitizing a gas phase chemical reaction is to add an inert gas such as Xe to the reaction system and irradiate the reaction system with resonance radiation of the inert gas. Ta. Xe, where almost all of this radiation is contained in the reaction system
absorbed by inert gases such as
光子エネルギーはXe等の不活性ガスによつて
吸収され、総体的な化学量論で示されるによつて
シリコンを折出する。 The photon energy is absorbed by an inert gas such as Xe and precipitates silicon according to the overall stoichiometry.
SiH4hr／XeSi＋2H2
励起されたXe等（Xe*として示される）の原
子はそのエネルギーを衝突により系内の反応体に
与え、最終的にSiを生成する連鎖反応が開始され
る。 SiH 4 hr/XeSi+2H 2 Excited atoms such as Xe (denoted as Xe * ) impart their energy to reactants in the system through collisions, starting a chain reaction that ultimately produces Si.
上記反応系をXeガスを添加した感光化混合物
を作り、この混合物を水銀アークランプからの放
射線に晒した。 A photosensitized mixture was prepared by adding Xe gas to the above reaction system, and this mixture was exposed to radiation from a mercury arc lamp.
水銀ランプから与えられた光子エネルギーによ
つて誘起された光化学反応によつて生成したSiは
上記基板表面上が常温から300℃以下に熱した膜、
アモルフアス・シリコン膜の薄膜層として形成さ
れた。 Si produced by a photochemical reaction induced by photon energy given from a mercury lamp is a film that is heated from room temperature to below 300°C on the surface of the substrate.
Formed as a thin layer of amorphous silicon film.
また、本発明は光化学反応により感光化させる
ものとして、人体または自然等に害を与える機
会、度合の大きい水銀の蒸気ではなく、Xe等の
不活性ガスを用いるので、非常に安全性及び公害
防止の点で効果の期待できるものである。 In addition, the present invention uses an inert gas such as Xe instead of mercury vapor, which has a high possibility of causing harm to the human body or nature, as a sensitizer through a photochemical reaction, so it is extremely safe and prevents pollution. It is expected to be effective in this respect.
この発明に従つて製造されたアモルフアス・シ
リコン膜は、太陽電池として供せられると共に、
反応系にイオンあるいは電子の発性がなく、固体
装置に放射線損傷を与えることなく、水分および
移動性イオンに対して完全に不透過性のパツシベ
ーシヨン膜として供せられる。したがつて、この
膜は太陽電池としての用途の他、薄い柔軟なパツ
シベーシヨン層が要求される多くの用途に好適で
ある。また、この膜は混成超小型回路やリード、
フレーム上にマウントされたワイヤボンデツト集
積回路の信頼性を高める上でことに有用である。 The amorphous silicon film produced according to the present invention can be used as a solar cell, and
The reaction system does not generate ions or electrons, does not cause radiation damage to solid-state devices, and can be provided as a passivation membrane that is completely impermeable to moisture and mobile ions. Therefore, this film is suitable for solar cell applications as well as many other applications where a thin, flexible passivation layer is required. This film can also be used for hybrid microcircuits, leads,
It is particularly useful in increasing the reliability of wire bonded integrated circuits mounted on frames.
第１図はこの発明の方法を実施するための装置
の概略図である。
１……石英反応室、２……パイプ、３，９……
コツク、４……流量計、５……基板、６……ヒー
ター、７……水銀ランプ照射計、８……排気パイ
プ。
FIG. 1 is a schematic diagram of an apparatus for carrying out the method of the invention. 1...Quartz reaction chamber, 2...Pipe, 3,9...
4...flow meter, 5...board, 6...heater, 7...mercury lamp irradiator, 8...exhaust pipe.
Claims (1)
程、前記ガス混合物に感光剤となるキセノン等の
不活性ガスを添加することにより感光化混合物を
形成する工程、前記感光化混合物に光子エネルギ
ーを与えて光化学反応によりシリコンガスを生成
する工程、前記光化学反応により生成されたシリ
コンガスに基づいて、所定温度に熱せられた基板
上に実質的にピンホールのないアモルフアス・シ
リコン膜を形成する工程を有することを特徴とす
るアモルフアス・シリコン膜の製造方法。1 preparing a gas mixture comprising silane; forming a photosensitizing mixture by adding an inert gas such as xenon as a photosensitizer to the gas mixture; imparting photon energy to the photosensitizing mixture; A step of generating silicon gas by a photochemical reaction, and a step of forming an amorphous silicon film substantially free of pinholes on a substrate heated to a predetermined temperature based on the silicon gas generated by the photochemical reaction. A method for producing an amorphous silicon film characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56097729A JPS57211735A (en) | 1981-06-24 | 1981-06-24 | Manufacture of amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56097729A JPS57211735A (en) | 1981-06-24 | 1981-06-24 | Manufacture of amorphous silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57211735A JPS57211735A (en) | 1982-12-25 |
| JPH0132652B2 true JPH0132652B2 (en) | 1989-07-10 |
Family
ID=14199970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56097729A Granted JPS57211735A (en) | 1981-06-24 | 1981-06-24 | Manufacture of amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57211735A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182520A (en) * | 1983-04-01 | 1984-10-17 | Hitachi Ltd | Optical cvd method |
-
1981
- 1981-06-24 JP JP56097729A patent/JPS57211735A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| THE JOURNAL OF PHYSICAL CHEMISTRY * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57211735A (en) | 1982-12-25 |
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