JPH0137870B2 - - Google Patents
Info
- Publication number
- JPH0137870B2 JPH0137870B2 JP16533184A JP16533184A JPH0137870B2 JP H0137870 B2 JPH0137870 B2 JP H0137870B2 JP 16533184 A JP16533184 A JP 16533184A JP 16533184 A JP16533184 A JP 16533184A JP H0137870 B2 JPH0137870 B2 JP H0137870B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor substrate
- cladding layer
- upper cladding
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
この発明は、半導体レーザの製造方法に係り、
特に、MBE装置でもつて製造されるAlGaAs系
半導体レーザの製造方法に関する。[Detailed Description of the Invention] (a) Field of Industrial Application This invention relates to a method of manufacturing a semiconductor laser,
In particular, the present invention relates to a method of manufacturing an AlGaAs semiconductor laser manufactured using an MBE apparatus.
(ロ) 従来技術
近年において、半導体レーザをMBE装置で製
造する方法が提案されており、ここでは、二回の
MBE成長工程を必要とする構造の半導体レーザ
を製造する場合を簡単に説明すると共に、その問
題点を指摘する。(b) Prior art In recent years, a method for manufacturing semiconductor lasers using MBE equipment has been proposed.
We will briefly explain the manufacturing of a semiconductor laser with a structure that requires the MBE growth process and point out its problems.
まず、一回目のMBE成長工程で第一の成長層
を形成した後、MBE装置から半導体基板を取り
出し、ホトエツチング工程にて第一の上部クラツ
ド層まで達する深さで、かつ、所定の幅のストラ
イプ溝を形成する。このホトエツチング工程を行
つたことに伴い、前記エツチングした部分（第一
の上部クラツド層の表面）に酸化物等の不純物が
直接付着するから、この不純物を所定の方法にて
蒸発させる。しかる後、二回目のMBE成長工程
で第二の成長層を積層させる。 First, after forming a first growth layer in the first MBE growth process, the semiconductor substrate is taken out from the MBE apparatus, and a photoetching process is performed to form stripes with a depth that reaches the first upper cladding layer and a predetermined width. Form a groove. As this photoetching step is performed, impurities such as oxides are directly attached to the etched portion (the surface of the first upper cladding layer), so these impurities are evaporated by a predetermined method. Thereafter, a second grown layer is deposited in a second MBE growth step.
しかして、前記不純物を蒸発させる工程におい
て、第一の上部クラツド層のAl組成が0.4以上の
場合、前記酸化物等の不純物は蒸発されにくくな
る。そのため、第二の成長工程にて形成される第
二の成長層の積層状態が劣化し、この部分を電流
が流れなくなるという問題を生じる。一方、前記
第一の上部クラツド層のAl組成を0.4以下にすれ
ば、第二の成長層の積層状態は比較的良いが、そ
の反面、光閉じ込め効率が抵下するという問題を
生じる。上述したことに基づいて、従来方法では
電気的性質および光学的性質の良好な半導体レー
ザを製造するのが因難である。 Therefore, in the step of evaporating the impurities, if the Al composition of the first upper cladding layer is 0.4 or more, the impurities such as the oxides are difficult to evaporate. Therefore, the stacked state of the second growth layer formed in the second growth step deteriorates, causing a problem that current no longer flows through this portion. On the other hand, if the Al composition of the first upper cladding layer is set to 0.4 or less, the laminated state of the second grown layer is relatively good, but on the other hand, a problem arises in that the light confinement efficiency decreases. Based on the above, conventional methods have difficulty producing semiconductor lasers with good electrical and optical properties.
(ハ) 目的
この発明は、第一の上部クラツド層のAl組成
の値に関係なく第二の成長層の積層状態を良好と
し、電気的性質および光学的性質が良好な半導体
レーザを容易に製造できる半導体レーザの製造方
法を提供することを目的としている。(c) Purpose This invention provides a method for easily producing a semiconductor laser with good electrical and optical properties by improving the lamination state of the second grown layer regardless of the Al composition value of the first upper cladding layer. The purpose of the present invention is to provide a method for manufacturing a semiconductor laser that can be manufactured using the following methods.
(ニ) 構成
この発明に係る半導体レーザの製造方法の特徴
とするところは、第一の成長工程において第一の
上部クラツド層と光吸収層との間に、Al組成を
ｘ＜0.4としたAlxGa1-xAsからなる保護層を介在
させたことにある。(D) Structure The method for manufacturing a semiconductor laser according to the present invention is characterized in that an Al layer with an Al composition of x<0.4 is grown between the first upper cladding layer and the light absorption layer in the first growth step. The reason for this is that a protective layer made of x Ga 1-x As is interposed.
(ホ) 実施例
第１図はこの発明に係る半導体レーザの製造方
法の一実施例を示す説明図である。(E) Embodiment FIG. 1 is an explanatory diagram showing an embodiment of the method for manufacturing a semiconductor laser according to the present invention.
(a) 図示しないMBE装置内に装置したＮ型の
GaAsからなる半導体基板１０を所定の方法に
て加熱する。蒸発源にそれぞれ入れられた原料
物質や不純物を分子線の形で蒸発させる。この
原料等を図示しない質量分析計でモニターし、
図示しないコンピユータぜ蒸発源の温度やシヤ
ツタを制御することにより、Ｎ型AlxGa1-xAs
からなる下部クラツド層２１（Al組成ｘ＝
0.55）と、AlxGa1-xAsからなる活性層２２
（Al組成ｘ＝0.12）と、Ｐ型AlxGa1-xAsからな
る第一の上部クラツド層２３（Al組成×＝
0.55）と、Ｐ型AlxGa1-xAsからなる保護層２
４（Al組成ｘ＝0.30）と、Ｎ型GaAsからなる
光吸収層２５と、Ｎ型AlxGa1-xAsからなる蒸
発防止層２６（Al組成ｘ＝0.35）とで構成する
第一の成長層２０を前記半導体基板１０に積層
させる（第一の成長工程）。(a) N-type installed in the MBE device (not shown)
A semiconductor substrate 10 made of GaAs is heated by a predetermined method. The raw materials and impurities put into the evaporation source are evaporated in the form of molecular beams. This raw material, etc. is monitored with a mass spectrometer (not shown),
By controlling the temperature and shutter of the computer evaporation source (not shown), N-type Al x Ga 1-x As
The lower cladding layer 21 (Al composition x=
0.55) and an active layer 22 consisting of Al x Ga 1-x As.
(Al composition x = 0.12) and the first upper cladding layer 23 (Al composition x =
0.55) and a protective layer 2 consisting of P-type Al x Ga 1-x As.
4 (Al composition x = 0.30), a light absorption layer 25 made of N-type GaAs, and an evaporation prevention layer 26 made of N-type Al x Ga 1-x As (Al composition x = 0.35). A growth layer 20 is laminated on the semiconductor substrate 10 (first growth step).
(b) 前記積層された半導体基板１０をMBE装置
から外部に取り出した後、半導体基板１０の裏
面をラツピングする。次に、ストラプ溝が形成
されるべき部分以外の蒸発防止層２６をホトレ
ジスト６０で覆う。このホトレジスト６０をマ
スクとして保護層２４の表面が露出するまで蒸
発防止層２６と光吸収層２５とを選択エツチン
グしてストライプ溝３０を形成する（ホトエツ
チング工程）。この工程にて、半導体基板１０
の表面に酸化物等の不純物が付着してしまう。(b) After taking out the stacked semiconductor substrates 10 from the MBE apparatus, the back surface of the semiconductor substrates 10 is wrapped. Next, the evaporation prevention layer 26 other than the portion where the strap groove is to be formed is covered with a photoresist 60. Using this photoresist 60 as a mask, the evaporation prevention layer 26 and the light absorption layer 25 are selectively etched until the surface of the protective layer 24 is exposed to form striped grooves 30 (photoetching step). In this process, the semiconductor substrate 10
Impurities such as oxides adhere to the surface.
(c) 前記ホトレジスト６０を除去した半導体基板
１０を有機洗浄する。その後、前記半導体基板
１０を再度MBE装置内に装着する。ここで、
半導体基板１０に砒素分子線をあてながら半半
導体基板を約740℃で加熱する。このまま約20
分間行なうことにより、半導体基板１０の表面
に付着している不純物を蒸発させる（サーマル
クリーニング工程）。(c) The semiconductor substrate 10 from which the photoresist 60 has been removed is organically cleaned. After that, the semiconductor substrate 10 is mounted again into the MBE apparatus. here,
The semi-semiconductor substrate 10 is heated to about 740° C. while being irradiated with an arsenic molecular beam. Approximately 20
By performing this cleaning for several minutes, impurities adhering to the surface of the semiconductor substrate 10 are evaporated (thermal cleaning step).
(d) (c)工程の状態で半導体基板１０の温度を約
600℃にして、(a)工程と同様の方法にてＰ型
AlYGa1-YAsからなる第二の上部クラツド層４
１（Al組成Ｙ＝0.35）と、P+型GaAsからなる
キヤツプ層４２とで構成する第二の成長層４０
を積層する（第二の成長工程）。以下、通常の
半導体レーザの製造方法と同様にＰ型電極５
０、Ｎ型電極５１とを形成する。(d) In the state of (c) process, the temperature of the semiconductor substrate 10 is approximately
At 600℃, P-type was formed using the same method as in step (a).
Second upper cladding layer 4 consisting of Al Y Ga 1-Y As
1 (Al composition Y=0.35) and a cap layer 42 made of P + type GaAs.
(second growth step). Hereinafter, the P-type electrode 5
0 and N-type electrodes 51 are formed.
尚、上述した実施例において、AlxGa1-xAsお
よびAlYGa1-YAsからなる各層のAl組成をそれぞ
れ記しているが、この発明はこれに限定されず、
適宜に変更できることは勿論である。 In addition, in the above-mentioned example, although the Al composition of each layer consisting of Al x Ga 1-x As and Al Y Ga 1-Y As is described, the present invention is not limited to this.
Of course, it can be changed as appropriate.
(ヘ) 効果
この発明は、第一の成長工程にて、第一の上部
クラツド層と光吸収層との間にAl組成をｘ＜0.4
としたAlxGa1-xAsからなる保護層を介在させた
から、保護層によつて第一の上部クラツド層がパ
シベーシヨン効果を持つこととなる。さらに保護
層のAl組成が0.4以下であるから、サーマルクリ
ーニング工程を行なえば清浄な表面を作ることが
できる。従つて、第一の上部クラツド層のAl組
成の値を任意に選択できるから、光閉じ込め効果
を向上させると共に、第二の成長層の積層状態を
良好にすることが可能である。(F) Effect This invention provides an Al composition of x<0.4 between the first upper cladding layer and the light absorption layer in the first growth step.
Since the protective layer made of Al x Ga 1-x As is interposed, the first upper cladding layer has a passivation effect due to the protective layer. Furthermore, since the Al composition of the protective layer is 0.4 or less, a clean surface can be created by performing a thermal cleaning process. Therefore, since the value of the Al composition of the first upper cladding layer can be arbitrarily selected, it is possible to improve the optical confinement effect and to improve the lamination state of the second grown layer.
また、保護層の成長は、MBE装置にて他の各
層と連続して成長させることができるから、特別
な成長工程を必要としないという効果を奏する。 Furthermore, since the protective layer can be grown continuously with other layers using an MBE apparatus, there is an advantage that no special growth process is required.
上述したことに基づいて、電気的性質および光
学的性質の良好な半導体レーザを製造するのが容
易になる。 Based on the above, it becomes easy to manufacture semiconductor lasers with good electrical and optical properties.
第１図はこの発明に係る半導体レーザの製造方
法の一実施例を示す説明図である。
１０……半導体基板、２０……第一の成長層、
２１……下部クラツド層、２２……活性層、２３
……第一の上部クラツド層、２４……保護層、２
５……光吸収層、２６……蒸発防止層、３０……
ストライプ溝、４０……第二の成長層、４１……
第二の上部クラツド層、４２……キヤツプ層。
FIG. 1 is an explanatory diagram showing an embodiment of a method for manufacturing a semiconductor laser according to the present invention. 10... Semiconductor substrate, 20... First growth layer,
21... lower cladding layer, 22... active layer, 23
...First upper cladding layer, 24...Protective layer, 2
5... Light absorption layer, 26... Evaporation prevention layer, 30...
Stripe groove, 40... Second growth layer, 41...
Second upper cladding layer, 42...cap layer.
Claims (1)
導体レーザの製造方法において、 下部クラツド層と、活性層と、第一の上部クラ
ツド層と、Al組成をｘ＜0.4としたAlxGa1-xAsか
らなる保護層と、GaAsからなる光吸収層と、蒸
発防止層とを半導体基板の表面に順次積層する第
一の成長工程と、 前記保護層まで達する深さで、かつ、所望の幅
のストライプ溝を形成するホトエツチング工程
と、 前記ストライプ溝が形成された半導体基板を再
度成長室内に導入し、前記半導体基板を加熱しな
がら前記半導体基板を砒素でもつて衝撃しつつ、
前記ストライプ溝が形成された半導体基板の表面
に付着した不純物を蒸発させるサーマルクリーニ
ング工程と、 前記不純物が蒸発された半導体基板の表面に第
二の上部クラツド層と、キヤツプ層とを順次積層
する第二の成長工程とを具備したことを特徴とす
る半導体レーザの製造方法。[Claims] 1. A method for manufacturing an AlGaAs semiconductor laser manufactured using an MBE apparatus, comprising: a lower cladding layer, an active layer, a first upper cladding layer, and Al x with an Al composition of x<0.4. a first growth step of sequentially laminating a protective layer made of Ga 1-x As, a light absorption layer made of GaAs, and an evaporation prevention layer on the surface of the semiconductor substrate; a photo-etching step to form striped grooves of a desired width; reintroducing the semiconductor substrate with the striped grooves formed into the growth chamber; bombarding the semiconductor substrate with arsenic while heating the semiconductor substrate;
a thermal cleaning step of evaporating impurities adhering to the surface of the semiconductor substrate on which the stripe grooves are formed; and a step of sequentially laminating a second upper cladding layer and a cap layer on the surface of the semiconductor substrate from which the impurities have been evaporated. 2. A method for manufacturing a semiconductor laser, characterized by comprising the following steps:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16533184A JPS6142984A (en) | 1984-08-06 | 1984-08-06 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16533184A JPS6142984A (en) | 1984-08-06 | 1984-08-06 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6142984A JPS6142984A (en) | 1986-03-01 |
| JPH0137870B2 true JPH0137870B2 (en) | 1989-08-09 |
Family
ID=15810301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16533184A Granted JPS6142984A (en) | 1984-08-06 | 1984-08-06 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6142984A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3683521D1 (en) * | 1985-04-02 | 1992-03-05 | Fujitsu Ltd | THERMAL SETTING OF A CONNECTION SEMICONDUCTOR. |
| JPS62141796A (en) * | 1985-12-17 | 1987-06-25 | Matsushita Electric Ind Co Ltd | semiconductor laser equipment |
| JPS6370587A (en) * | 1986-09-12 | 1988-03-30 | Sharp Corp | Semiconductor laser |
| JP2585230B2 (en) * | 1986-09-16 | 1997-02-26 | 株式会社日立製作所 | Semiconductor laser device |
-
1984
- 1984-08-06 JP JP16533184A patent/JPS6142984A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6142984A (en) | 1986-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69110726T2 (en) | Method of manufacturing a semiconductor laser. | |
| JPH0137870B2 (en) | ||
| JPH0137871B2 (en) | ||
| JPH0513881A (en) | Semiconductor laser manufacturing method | |
| JPS6367351B2 (en) | ||
| JPH0137873B2 (en) | ||
| JPH0479157B2 (en) | ||
| JPS6142985A (en) | Semiconductor laser and manufacture thereof | |
| JPH0695583B2 (en) | Method for manufacturing semiconductor laser | |
| JPH0519837B2 (en) | ||
| JP3881041B2 (en) | Method for manufacturing compound semiconductor device | |
| JP3143105B2 (en) | Method for manufacturing semiconductor laser device | |
| JPH11354880A (en) | Semiconductor laser element and its manufacturing method | |
| JPH0396290A (en) | Manufacturing method for semiconductor laser | |
| JPH08186324A (en) | Semiconductor laser and its manufacture | |
| JPH0744307B2 (en) | Semiconductor laser manufacturing method | |
| JPS6216037B2 (en) | ||
| JP2717016B2 (en) | Semiconductor laser and method of manufacturing the same | |
| JPH0327584A (en) | Manufacture of semiconductor laser | |
| JPH04245490A (en) | Manufacture of semiconductor laser | |
| JPH0533550B2 (en) | ||
| JPH0533551B2 (en) | ||
| JPH07263800A (en) | Semiconductor laser and its manufacture | |
| JPH02194683A (en) | Semiconductor laser | |
| JPH0685383A (en) | Semiconductor laser element and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |