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JPH0140510B2 - - Google Patents
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JPH0140510B2 - - Google Patents

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Publication number
JPH0140510B2
JPH0140510B2 JP55123873A JP12387380A JPH0140510B2 JP H0140510 B2 JPH0140510 B2 JP H0140510B2 JP 55123873 A JP55123873 A JP 55123873A JP 12387380 A JP12387380 A JP 12387380A JP H0140510 B2 JPH0140510 B2 JP H0140510B2
Authority
JP
Japan
Prior art keywords
main current
magnetoelectric
current paths
output
magnetoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55123873A
Other languages
Japanese (ja)
Other versions
JPS5748281A (en
Inventor
Kazuo Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP55123873A priority Critical patent/JPS5748281A/en
Publication of JPS5748281A publication Critical patent/JPS5748281A/en
Publication of JPH0140510B2 publication Critical patent/JPH0140510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices

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  • Hall/Mr Elements (AREA)

Description

【発明の詳細な説明】 本発明は磁電変換素子に関し、特に、互に位相
の異なつた複数の出力波を検出する為の検出機構
に用いて好適なものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoelectric conversion element, and is particularly suitable for use in a detection mechanism for detecting a plurality of output waves having mutually different phases.

本出願人は先に特開昭50−28989号により新規
な構造を有する磁電変換素子を提案した。そこで
先ず上記出願に係る磁電変換素子ついてその概略
を説明する。
The present applicant previously proposed a magnetoelectric transducer having a novel structure in Japanese Patent Laid-Open No. 50-28989. First, the outline of the magnetoelectric conversion element according to the above application will be explained.

第1図はこの磁電変換素子10の構成を示すも
ので、ガラス等より成る基板1の表面に、ニツケ
ル−コバルトのような磁気抵抗効果の異方性を有
する、即ち、磁界の方向に依つて電気抵抗が変化
する強磁性体A,Bの薄膜が形成されている。こ
の強磁性体A,Bは例えば櫛歯パターン状に強磁
性材料を蒸着するか又は全面に蒸着した後、エツ
チングして形成することが出来る。この強磁性体
A,Bは主電流通路となる複数の直線部分2A,
2Bと、これらを連結する屈曲部3A,3Bとか
ら夫々構成されており、上記直線部分2A,2B
は互いに略直交するように配されている。また直
線部分2A,2Bの各端部4A,4Bは互に接続
されていて強磁性体A,Bは直列接続となつてい
る。上記接続部に出力端子5が形成され、さらに
直線部分2A,2Bの他端部6A,6Bに夫々電
流端子7A,7Bが形成されている。
FIG. 1 shows the structure of this magnetoelectric transducer 10, in which the surface of a substrate 1 made of glass or the like has anisotropy of magnetoresistive effect like nickel-cobalt, that is, it has anisotropy of magnetoresistive effect depending on the direction of the magnetic field. Thin films of ferromagnetic materials A and B whose electrical resistance changes are formed. The ferromagnetic materials A and B can be formed by, for example, depositing a ferromagnetic material in a comb-teeth pattern or by depositing it on the entire surface and then etching it. These ferromagnetic materials A and B have a plurality of straight portions 2A, which serve as main current paths,
2B, and bent portions 3A, 3B connecting these, and the straight portions 2A, 2B
are arranged so as to be substantially orthogonal to each other. Further, the respective ends 4A and 4B of the straight portions 2A and 2B are connected to each other, and the ferromagnetic bodies A and B are connected in series. An output terminal 5 is formed at the connecting portion, and current terminals 7A, 7B are formed at the other ends 6A, 6B of the straight portions 2A, 2B, respectively.

第2図は動作原理図で、電流端子7A,7Bが
電源8に接続され、且つ一方の電流端子7Bはア
ースされており、全体として磁電変換回路9を構
成している。
FIG. 2 is a diagram showing the principle of operation, in which current terminals 7A and 7B are connected to a power source 8, and one current terminal 7B is grounded, forming a magnetoelectric conversion circuit 9 as a whole.

今、強磁性体A,Bを飽和磁化させるに充分な
強さの磁界Hを、強磁性体A,Bのなす平面に於
いて、強磁性体Aの直線部分2Aの方向、即ち電
流方向に対して角度θを以つて加えると、強磁性
体A,Bの各電気抵抗ρA、ρBが変化し、その変化
は角度θにより次式で表わされる。
Now, apply a magnetic field H of sufficient strength to saturate magnetize the ferromagnetic materials A and B in the direction of the straight portion 2A of the ferromagnetic material A, that is, in the direction of the current in the plane formed by the ferromagnetic materials A and B. On the other hand, when the angle .theta .

ρA=ρ⊥sin2θ+ρ″cos2θ …… ρB=ρ⊥cos2θ+ρ″sin2θ …… 但し、ρ⊥は強磁性体A,Bを電流と垂直方向
に飽和磁化したときの強磁性体A,Bの電気抵
抗、ρ″は同じく電流と平行方向に飽和磁化したと
きの強磁性体A,Bの電気抵抗である。
ρ A = ρ⊥sin 2 θ+ρ″cos 2 θ … ρ B =ρ⊥cos 2 θ+ρ″sin 2 θ … However, ρ⊥ is the value when ferromagnetic materials A and B are saturated magnetized in the direction perpendicular to the current. Similarly, the electrical resistance ρ'' of the ferromagnetic materials A and B is the electrical resistance of the ferromagnetic materials A and B when they are saturated magnetized in the direction parallel to the current.

また出力端子5の電圧Vθは、強磁性体A,B
は直列接続であるから、電源電圧をV0とすれば
次式で表わされる。
Moreover, the voltage Vθ of the output terminal 5 is
are connected in series, so if the power supply voltage is V0 , it can be expressed by the following equation.

Vθ=ρB/ρA+ρBV0 …… 式に式を代入して整理すると、 Vθ=V0/2−Δρ/2(ρ″+ρ⊥)・cos2θ・V0
…… (但しΔρ=ρ″−ρ⊥とする。) となる。この式において右辺第1項は基準電圧
を表し、第2項は変化量ΔVθを表すものとなり、 ΔV(θ)=Δρ/4ρ0cos2θ・V0 …… で表わされる。但し2ρ0=ρ″+ρ⊥とし、ρ0は消
磁状態の電気抵抗である。
Vθ=ρ BAB V 0 ... Substituting the formula into the equation and rearranging, Vθ=V 0 /2−Δρ/2(ρ″+ρ⊥)・cos 2 θ・V 0
... (However, Δρ = ρ'' - ρ⊥.) In this equation, the first term on the right side represents the reference voltage, the second term represents the amount of change ΔVθ, and ΔV(θ) = Δρ/ It is expressed as 4ρ 0 cos 2 θ・V 0 .... However, 2ρ 0 = ρ″+ρ⊥, and ρ 0 is the electrical resistance in the demagnetized state.

従つて出力端子5の電圧Vθは、磁界Hの方向
に依り変化し、その出力変化は第3図のように、
0゜、180゜で最小値、90゜、270゜で最大値をとる正弦
波形となる。
Therefore, the voltage Vθ at the output terminal 5 changes depending on the direction of the magnetic field H, and the output change is as shown in FIG.
It becomes a sine waveform with minimum values at 0° and 180° and maximum values at 90° and 270°.

第4図は等価回路を示すもので、強磁性体A,
Bを可変抵抗とし、その抵抗値が磁界Hの方向に
依り変化するものとして考えることができる。
Figure 4 shows the equivalent circuit, in which ferromagnetic material A,
It can be considered that B is a variable resistance whose resistance value changes depending on the direction of the magnetic field H.

このような磁電変換素子10を用いて回転を検
出する場合、第6図に示すように、検出される回
転軸に関連されて設けられ且つ外周部に磁極N、
Sが着磁されたロータ11の外周囲近傍にこの素
子10が配され、ロータ11の回転に依る磁力線
の変化をこの素子10で検出する。ところが、こ
のような素子10を用いた回転検出機構に依り、
例えば波長選択機能を持たせる為、第5図に示す
ような互に位相がφだけずれた2つの出力波P、
Qを検出しようとすると、第6図に示すように、
2つの素子10を所定の間隔lだけ離して用いな
ければならない。この時磁極パターンN又はSの
間隔をλとすると、 λ/l=180゜/φ …… である。即ち、素子10間の間隔lが磁極パター
ンの間隔λに密接に関係していることが分る。そ
こで、このような回転検出機構を設計する場合、
磁極パターンの間隔λから計算して素子10の配
置を決定せねばならず、例えば、ロータ11の径
や着磁されている極数が異なる為に磁極パターン
の間隔λが異なる場合には、その都度素子10の
間隔lを変更しなければならない。又、素子10
はロータ11から或る程度のクリアランスdを置
いて設けられる為、この距離dも考慮に入れる必
要があつた。例えば、2つの素子10のクリアラ
ンスdが互に異なつていると、得られる合成出力
波の波形が歪んでしまう恐れがある。
When detecting rotation using such a magnetoelectric transducer 10, as shown in FIG.
This element 10 is arranged near the outer periphery of the rotor 11 to which S is magnetized, and changes in the lines of magnetic force due to the rotation of the rotor 11 are detected by this element 10. However, due to the rotation detection mechanism using such an element 10,
For example, in order to have a wavelength selection function, two output waves P whose phases are shifted by φ as shown in FIG.
When trying to detect Q, as shown in Figure 6,
Two elements 10 must be used separated by a predetermined distance l. At this time, if the interval between the magnetic pole patterns N or S is λ, then λ/l=180°/φ... That is, it can be seen that the spacing l between the elements 10 is closely related to the spacing λ of the magnetic pole patterns. Therefore, when designing such a rotation detection mechanism,
The arrangement of the element 10 must be determined by calculation from the spacing λ of the magnetic pole patterns. For example, if the spacing λ of the magnetic pole patterns differs because the diameter of the rotor 11 or the number of magnetized poles differs, The spacing l of the elements 10 must be changed each time. Also, element 10
is provided with a certain amount of clearance d from the rotor 11, so it was necessary to take this distance d into consideration. For example, if the clearances d of the two elements 10 are different from each other, the waveform of the resulting combined output wave may be distorted.

本発明は上述の欠点を克服する為に為されたも
のであつて、磁極パターンの間隔に無関係な磁電
変換素子を提供しようとするものである。
The present invention has been made to overcome the above-mentioned drawbacks, and aims to provide a magnetoelectric transducer that is independent of the spacing between magnetic pole patterns.

以下、本発明を一実施例に就き第7図及び第8
図を参照して説明する。
Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 7 and 8.
This will be explained with reference to the figures.

第7図に示すように、本実施例に依る磁電変換
素子15は、第1の素子部16と第2の素子部1
7とが互に積層構造をなすように形成されてい
る。即ち、シリコン基板18の表面に形成された
酸化膜19上に、Ni−Co等の磁気抵抗効果の異
方性を有する強磁性体から成る第1の素子部16
が所定パターン状に形成され、更にこの上面に絶
縁層20を介して第2の素子部17がやはり所定
のパターン状に形成されている。これら第1及び
第2の素子部16,17は夫々既述した磁電変換
素子10と同様に、屈曲部に依り連結された直線
状の主電流通路21,22及び23,24を具備
しており、その際、第1の素子部16及び第2の
素子部17に於ける主電流通路21と22及び2
3と24との方向が夫々互に直角方向をなすよう
に構成されている。そして、更に、第1の素子部
16に於ける第1の主電流通路21と第2の素子
部17に於ける第1の主電流通路23とは、その
方向を互に所定の角度、例えばφだけ傾けて重ね
られており、従つて第1の素子部16に於ける第
2の主電流通路22と第2の素子部17に於ける
第2の主電流通路24も互にやはりφだけ傾いて
いる。第1の素子部16と第2の素子部17とに
は夫々、既述した磁電変換素子10と同様に出力
端子25,26及び電流端子27,28が設けら
れている。
As shown in FIG. 7, the magnetoelectric transducer 15 according to this embodiment has a first element part 16 and a second element part 1.
7 are formed so as to form a laminated structure. That is, on an oxide film 19 formed on the surface of a silicon substrate 18, a first element portion 16 made of a ferromagnetic material having anisotropy of magnetoresistive effect, such as Ni-Co, is formed.
are formed in a predetermined pattern, and furthermore, a second element portion 17 is also formed in a predetermined pattern on the upper surface thereof with an insulating layer 20 interposed therebetween. These first and second element parts 16 and 17 each have linear main current paths 21 and 22 and 23 and 24 connected by bending parts, respectively, similarly to the magnetoelectric conversion element 10 described above. At that time, the main current paths 21 and 22 and 2 in the first element section 16 and the second element section 17
The directions of 3 and 24 are perpendicular to each other. Furthermore, the first main current path 21 in the first element section 16 and the first main current path 23 in the second element section 17 are arranged at a predetermined angle with respect to each other, for example. Therefore, the second main current path 22 in the first element section 16 and the second main current path 24 in the second element section 17 are also tilted by φ. It's leaning. The first element section 16 and the second element section 17 are provided with output terminals 25, 26 and current terminals 27, 28, respectively, similarly to the magnetoelectric conversion element 10 described above.

即ち、上述のように構成された磁電変換素子1
5に於いては、各素子部16,17が各々、既述
した磁電変換素子10と同じ機能を有している。
従つて、各出力端子25,26からは第3図に示
したものと同じ出力波形が得られ、しかも、第1
の素子部16の主電流通路21,22と第2の素
子部17の主電流通路23,24とが互に角度φ
だけ傾けられているので、得られる出力波の位相
はφだけずれたものになる。つまり、本実施例の
磁電変換素子15は、第6図に示すような所定間
隔lで配された2つの磁電変換素子10と全く同
じ機能を持つていることが分る。しかも、第1の
素子部16と第2の素子部17とが互に積重ねら
れた構造なので、位相のずれφは、ロータの磁極
間隔に依らず常に一定である。
That is, the magnetoelectric conversion element 1 configured as described above
5, each element portion 16, 17 has the same function as the magnetoelectric conversion element 10 described above.
Therefore, the same output waveform as shown in FIG. 3 is obtained from each output terminal 25, 26, and the first
The main current paths 21 and 22 of the element section 16 and the main current paths 23 and 24 of the second element section 17 are at an angle φ.
Since the output wave is tilted by φ, the phase of the output wave obtained is shifted by φ. In other words, it can be seen that the magnetoelectric transducer 15 of this example has exactly the same function as the two magnetoelectric transducers 10 arranged at a predetermined interval l as shown in FIG. Moreover, since the first element section 16 and the second element section 17 are stacked on top of each other, the phase shift φ is always constant regardless of the magnetic pole spacing of the rotor.

次に、この磁電変換素子15の製造方法の一例
を第8A図〜第8C図を参照して説明する。
Next, an example of a method for manufacturing the magnetoelectric transducer 15 will be described with reference to FIGS. 8A to 8C.

第8A図に示すように、先ずシリコン基板18
の表面に酸化膜19を形成し、その上にNi−Co
から成る第1の素子部16を蒸着等によりパター
ン状に形成する。次に第8B図に示すように、こ
の上面に絶縁層20として例えばポリイミド系樹
脂(日立化成社製:商品名PIQ)を硬化条件120
℃×1h、200℃×1h、300℃×1h等で塗布する。
最後に、第8c図に示すように、これらの上面
に、やはりNi−Coから成る第2の素子部17を
蒸着等によりパターン状に形成する。実際には1
個のシリコン基板上に数個あるいはそれ以上の磁
電変換素子を形成し、上述の工程が終了した後に
各素子に分割して、数個あるいはそれ以上の磁電
変換素子を同時に製造するのが良い。
As shown in FIG. 8A, first, the silicon substrate 18
An oxide film 19 is formed on the surface of the Ni-Co
A first element portion 16 consisting of the following is formed into a pattern by vapor deposition or the like. Next, as shown in FIG. 8B, a polyimide resin (trade name: PIQ, manufactured by Hitachi Chemical Co., Ltd.), for example, is coated on the upper surface as an insulating layer 20 under a curing condition of 120.
Apply at ℃×1h, 200℃×1h, 300℃×1h, etc.
Finally, as shown in FIG. 8c, a second element portion 17 also made of Ni--Co is formed in a pattern on the upper surface thereof by vapor deposition or the like. Actually 1
It is preferable to form several or more magnetoelectric transducers on a single silicon substrate, and after the above-mentioned steps are completed, to divide the magnetoelectric transducers into individual elements, thereby simultaneously manufacturing several or more magnetoelectric transducers.

尚、本例に於いては、第1及び第2の素子部1
6,17としてNi−Coを用いたが、Insb等を用
いることも出来る。又、絶縁層20としては、
SiO2、Si3N4、セラミツク等を用いることが出来
るが、本例に使用したポリイミド系樹脂は、絶縁
物として要求される耐熱性(300℃以上)、面のフ
ラツト性、耐薬品性及び密着性の点で優れ、上記
のような気相成長(SiO2、Si3N4)、蒸着、ある
いはスパツタリング等による薄膜と比較して有利
な材料であると言えよう。更に、本例ではシリコ
ン基板上に素子パターンを形成したが、基板内に
トランジスタ、ダイオード、IC等を形成し、こ
の表面に絶縁層(望ましくはSiO2層−ポリイミ
ド系樹脂層)を介して素子パターンを形成するこ
とも出来る。この場合、基板のトランジスタ等と
磁電変換素子とは、絶縁層に設けられたコンタク
トホールを通じて、Al、Au等の一般に使用され
る導体金属で接続されて良い。
Note that in this example, the first and second element portions 1
Although Ni-Co was used as 6 and 17, Insb etc. can also be used. Moreover, as the insulating layer 20,
Although SiO 2 , Si 3 N 4 , ceramics, etc. can be used, the polyimide resin used in this example has the heat resistance (300°C or higher), surface flatness, chemical resistance, and It has excellent adhesion and can be said to be an advantageous material compared to thin films formed by vapor phase growth (SiO 2 , Si 3 N 4 ), vapor deposition, sputtering, etc. as described above. Furthermore, in this example, an element pattern was formed on a silicon substrate, but transistors, diodes, ICs, etc. were formed within the substrate, and the elements were formed on the surface via an insulating layer (preferably a two -layer SiO layer and a polyimide resin layer). It is also possible to form patterns. In this case, the transistor or the like on the substrate and the magnetoelectric conversion element may be connected with a commonly used conductive metal such as Al or Au through a contact hole provided in an insulating layer.

又、本実施例による磁電変換素子15は次のよ
うな長所を有している。即ち、本実施例の磁電変
換素子15に於いては、第1の素子部16と第2
の素子部17とが絶縁層20を介して互に積層さ
れ、両素子部16,17の各主電流通路21,2
2と23,24とが互いに、略平行な面内におい
て略完全に重なり合つている。従つて、例えば、
ロータ等からの各素子部16,17の距離(クリ
アランス)dが均等となり、位置関係に依つて両
素子部16,17に出力差を生じることがないの
で、歪のない合成出力波が得られる。又、素子1
5全体の大きさを小さくすることが出来、コスト
ダウンを図ることが出来る。更に、第1の素子部
16が絶縁層20で被覆されるので、その断線を
効果的に防止できると共に、酸化等から素子パタ
ーンを保護することが出来る。又、各素子部1
6,17に於ける主電流通路21,22及び2
3,24は互いに略平行な面内に存在しているか
ら、磁界が基板18と平行に加わつた際に磁界が
各素子部16,17に一様に加わることになり、
従つて、出力特性のばらつきが小さくなつて、や
はり、得られる合成出力波の歪が小さくなる。
Furthermore, the magnetoelectric transducer 15 according to this embodiment has the following advantages. That is, in the magnetoelectric transducer 15 of this embodiment, the first element portion 16 and the second
The element parts 17 are stacked on each other with an insulating layer 20 in between, and the main current paths 21 and 2 of both the element parts 16 and 17 are
2, 23, and 24 substantially completely overlap each other in substantially parallel planes. Therefore, for example,
The distance (clearance) d of each element part 16, 17 from the rotor etc. is equalized, and there is no output difference between the two element parts 16, 17 depending on the positional relationship, so a synthesized output wave without distortion can be obtained. . Also, element 1
The overall size of 5 can be reduced, and costs can be reduced. Furthermore, since the first element section 16 is covered with the insulating layer 20, disconnection thereof can be effectively prevented, and the element pattern can be protected from oxidation and the like. Moreover, each element part 1
Main current paths 21, 22 and 2 in 6, 17
3 and 24 exist in planes that are substantially parallel to each other, so when a magnetic field is applied parallel to the substrate 18, the magnetic field is uniformly applied to each element portion 16 and 17.
Therefore, the variation in the output characteristics is reduced, and the distortion of the resulting combined output wave is also reduced.

以上、本発明を一実施例に就き説明したが、上
記実施例は本発明を限定するものでは決してな
く、本発明の技術的思想に基いて種々の変更が可
能である。例えば、第1の素子部16の主電流通
路21,22と第2の素子部17の主電流通路2
3,24との間の傾きφは所望の値に選定してお
くことが出来る。又、この傾きφを順次違えた3
つ以上の素子部を積層することも出来、この場合
には、夫々の位相差を持つた3つ以上の出力波を
得ることが出来る。更に、磁界強度が強くて、場
所に依り磁束密度が不均一になるような場合に
は、第1の素子部16の主電流通路21と22及
び第2の素子部17の主電流通路23と24、即
ち、全ての主電流通路を積層した構造のものと用
いることが出来る。
Although the present invention has been described above with reference to one embodiment, the above embodiment does not limit the present invention in any way, and various changes can be made based on the technical idea of the present invention. For example, the main current paths 21 and 22 of the first element section 16 and the main current path 2 of the second element section 17
The slope φ between 3 and 24 can be selected to a desired value. In addition, this slope φ was sequentially changed 3
It is also possible to stack three or more element parts, and in this case, three or more output waves having respective phase differences can be obtained. Furthermore, if the magnetic field strength is strong and the magnetic flux density becomes uneven depending on the location, the main current paths 21 and 22 of the first element section 16 and the main current path 23 of the second element section 17 24, that is, a structure in which all the main current paths are stacked can be used.

以上説明したように、本発明に依る磁電変換素
子に於いては、磁界の方向に依つて電気抵抗が変
化する強磁性体から成り且つ互に直角方向をなす
ように配されて直列接続された第1及び第2の主
電流通路を有する複数の素子部を、対応する主電
流通路の方向を互に所定の角度設けた状態で積層
している。従つて、例えばロータ等の磁極パター
ンとは無関係に、所望の位相差を持つた出力波を
得ることが出来、この為、種々の磁極パターンに
対して用いることが出来る。又、例えばロータ等
からのクリアランスの変動を考慮に入れる必要が
なくなるので、その取扱いが簡単になる。更に、
素子全体の大きさを小さくすることが出来、コス
トダウンを図ることが出来る。
As explained above, the magnetoelectric transducer according to the present invention is made of a ferromagnetic material whose electrical resistance changes depending on the direction of the magnetic field, and which are arranged in a perpendicular direction and connected in series. A plurality of element parts having first and second main current paths are stacked with the directions of the corresponding main current paths set at a predetermined angle with respect to each other. Therefore, an output wave having a desired phase difference can be obtained regardless of the magnetic pole pattern of the rotor, etc., and therefore it can be used for various magnetic pole patterns. Further, since there is no need to take into account the variation in clearance from, for example, the rotor, the handling becomes easier. Furthermore,
The size of the entire element can be reduced, and costs can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の磁電変換素子の構造を示す平面
図、第2図はその原理回路図、第3図は出力電圧
波形図、第4図は等価回路図、第5図は位相がφ
だけずれた2つの出力波を示す第3図と同様の出
力電圧波形図、第6図は第5図の出力を得る為の
従来の磁電変換素子の配置を示す概略平面図であ
る。第7図は本発明の一実施例に依る磁電変換素
子の構造を示す分解斜視図、第8図はこの磁電変
換素子の製造方法を工程順に示すもので、第8A
図は基板上に第1の素子部を形成した状態を示す
概略断面図、第8B図はその上に絶縁層を形成し
た状態を示す第8A図と同様の概略断面図、第8
C図は更にその上に第2の素子部を形成した状態
を示す第8A図と同様の概略断面図である。 なお図面に用いられている符号において、15
……磁電変換素子、16……第1の素子部、17
……第2の素子部、21,22,23,24……
主電流通路である。
Fig. 1 is a plan view showing the structure of a conventional magnetoelectric conversion element, Fig. 2 is its principle circuit diagram, Fig. 3 is an output voltage waveform diagram, Fig. 4 is an equivalent circuit diagram, and Fig. 5 shows that the phase is φ.
FIG. 6 is an output voltage waveform diagram similar to FIG. 3 showing two output waves shifted by a certain amount, and FIG. 6 is a schematic plan view showing the arrangement of a conventional magnetoelectric transducer for obtaining the output shown in FIG. FIG. 7 is an exploded perspective view showing the structure of a magnetoelectric conversion element according to an embodiment of the present invention, and FIG. 8 shows a method for manufacturing this magnetoelectric conversion element in order of steps.
The figure is a schematic sectional view showing a state in which a first element portion is formed on a substrate, FIG. 8B is a schematic sectional view similar to FIG. 8A showing a state in which an insulating layer is formed thereon, and FIG.
FIG. C is a schematic sectional view similar to FIG. 8A, showing a state in which a second element portion is further formed thereon. In addition, in the symbols used in the drawings, 15
...Magnetoelectric conversion element, 16...First element portion, 17
...Second element section, 21, 22, 23, 24...
This is the main current path.

Claims (1)

【特許請求の範囲】[Claims] 1 磁界の方向に依つて電気抵抗が変化する強磁
性体から成り且つ互に直角方向をなすように配さ
れて直列接続された第1及び第2の主電流通路を
有する少なくとも2つの素子部が、対応する主電
流通路の方向を互に所定の角度傾けた状態で積層
されていることを特徴とする磁電変換素子。
1. At least two element parts are made of a ferromagnetic material whose electrical resistance changes depending on the direction of the magnetic field, and have first and second main current paths connected in series and arranged at right angles to each other. , a magnetoelectric conversion element characterized in that the elements are laminated in such a manner that the directions of the corresponding main current paths are mutually inclined at a predetermined angle.
JP55123873A 1980-09-06 1980-09-06 Magnetoelectric transducer Granted JPS5748281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55123873A JPS5748281A (en) 1980-09-06 1980-09-06 Magnetoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55123873A JPS5748281A (en) 1980-09-06 1980-09-06 Magnetoelectric transducer

Publications (2)

Publication Number Publication Date
JPS5748281A JPS5748281A (en) 1982-03-19
JPH0140510B2 true JPH0140510B2 (en) 1989-08-29

Family

ID=14871478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55123873A Granted JPS5748281A (en) 1980-09-06 1980-09-06 Magnetoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5748281A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924639B2 (en) 2002-03-18 2005-08-02 Denso Corporation Position determination device using magnetoresistive element
US6954063B2 (en) 2001-03-27 2005-10-11 Denso Corporation Motion detecting device using magnetoresistive unit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193705A (en) * 1983-04-18 1984-11-02 Nippon Yakin Kogyo Co Ltd Hot rolling method by planetary mill line
JP4742816B2 (en) * 2005-11-01 2011-08-10 株式会社デンソー Rotation detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6954063B2 (en) 2001-03-27 2005-10-11 Denso Corporation Motion detecting device using magnetoresistive unit
US6924639B2 (en) 2002-03-18 2005-08-02 Denso Corporation Position determination device using magnetoresistive element

Also Published As

Publication number Publication date
JPS5748281A (en) 1982-03-19

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