JPH0140910B2 - - Google Patents
Info
- Publication number
- JPH0140910B2 JPH0140910B2 JP60057222A JP5722285A JPH0140910B2 JP H0140910 B2 JPH0140910 B2 JP H0140910B2 JP 60057222 A JP60057222 A JP 60057222A JP 5722285 A JP5722285 A JP 5722285A JP H0140910 B2 JPH0140910 B2 JP H0140910B2
- Authority
- JP
- Japan
- Prior art keywords
- arc welding
- ceramic
- contact tip
- contact
- ceramic coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003466 welding Methods 0.000 claims description 52
- 238000005524 ceramic coating Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 29
- 238000011282 treatment Methods 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000005488 sandblasting Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 3
- 229910000851 Alloy steel Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000007751 thermal spraying Methods 0.000 claims 1
- 239000011247 coating layer Substances 0.000 description 20
- 238000007750 plasma spraying Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003925 fat Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910017526 Cu-Cr-Zr Inorganic materials 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- 229910017810 Cu—Cr—Zr Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910017532 Cu-Be Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Arc Welding In General (AREA)
- Coating By Spraying Or Casting (AREA)
Description
〔産業上の利用分野〕
本発明は、アーク溶接用コンタクトチツプに、
耐摩耗性、耐スパツタ性および耐反応性を向上さ
せるため、セラミツク被覆を施す方法に関する。
〔従来の技術〕
アーク溶接用コンタクトチツプは通常、銅系合
金またはアルミニウム合金で作られているが、コ
ンタクトチツプの表面が金属であるため溶接時の
スパツタ付着あるいは熱化学反応により、ノズル
部の摩耗あるいは目づまりが発生し、これがコン
タクトチツプの寿命を著るしく短かいものとして
いた。
前述のような問題を解決する方法として、実開
昭52−26630号公報、実開昭59−49478号公報また
は実開昭57−82484号公報に記載されるように、
コンタクトチツプのノズル部をセラミツク製ガイ
ドで保護する方法。
あるいは実開昭50−76021号公報、実開昭57−
160887号公報に記載されるようにコンタクトチツ
プをセラミツクで被覆する方法が提案されてきて
いる。
しかしながら前記のノズル部をセラミツクガイ
ドで保護する方法は、コンタクトチツプの構造が
複雑になり製造コスト的に問題があるばかりでな
く、広範囲に飛散するスパツタに対してコンタク
トチツプ全体を保護できないという問題があつ
た。
一方コンタクトチツプをセラミツクで被覆する
方法は、構造の複雑化およびチツプ全体の保護の
問題を解決する可能性を秘めているが、その被覆
方法が未だ確立してなく、被覆方法によつては使
用時にセラミツク層の割れあるいは剥離が生じる
などの問題があつた。
本発明者等は、コンタクトチツプにセラミツク
被覆する方法を鋭意研究した結果、PVD法また
はCVD法によりセラミツクを被覆する方法を開
発し、先に実願昭59−163202号として出願した。
本発明者等は、さらにこの方法を研究した結
果、前記実願昭59−163202号の技術により、コン
タクトチツプの耐スパツタ性、耐反応性を向上さ
せ、寿命を大幅に長くすることに成功したが、こ
の技術においてもなおセラミツク被覆層の膜厚が
10μ以下で防熱効果が充分でなく、またCVD法お
よびPVD法を適用する場合コンタクトチツプを
それぞれ500〜1000℃程度に加熱する必要があり、
この加熱によりコンタクトチツプが焼鈍された状
態になるため硬度が低下し、ワイヤによる摩耗が
大きくなるとともに強度が低下し正確な溶接が困
難になること、そしてこれを防ぐためにはセラミ
ツク被覆後さらに硬化処理をおこなわねばならな
いなど、さらに改善すべきいくつかの問題がある
ことを見出した。
〔発明が解決しようとする問題点〕
本発明は、アーク溶接用コンタクトチツプにセ
ラミツク被覆を施す際に問題となつていた前記の
セラミツク被覆層の割れ、剥離の問題、膜厚の問
題および焼鈍軟化の問題を同時に解決する方法を
提供することを目的としている。
〔問題点を解決するための手段〕
本発明は、前記の目的を達成するための手段を
鋭意研究開発を続けた結果、セラミツクをプラズ
マ溶射によりコンタクトチツプに被覆した場合、
セラミツク被覆の膜厚を任意にとることができ、
またその密着性も強く、かつセラミツク被覆処理
中のコンタクトチツプ基体の温度が100℃程度に
抑制できコンタクトチツプ基体の焼鈍軟化を防止
できることを見出して完成されたもので、具体的
には、アーク溶接用コンタクトチツプ基体表面に
例えば超音波洗浄による脱脂およびサンドブラス
トによる酸化皮膜の除去などの清浄処理を施した
後、必要に応じて耐酸化性金属を溶射し、次にセ
ラミツクをプラズマ溶射し、最後に表面の平滑化
処理を施す構成をとることにより、前記問題点を
同時に解決したものである。
〔作用〕
アーク溶接用コンタクトチツプ基体1は通常鍛
造もしくは研削加工により製作されるため、基体
表面には潤滑油などの油脂分が付着している。油
脂分が付着した状態で、これにセラミツクプラズ
マ溶射すると、プラズマ溶射においては一般に火
焔距離が短かく、また基体表面に伝達される熱エ
ネルギーが小さく基体表面から油脂分を完全に飛
散除去することができず、第4図イの如く炭素5
状態でセラミツク被覆層3に巻込んでしまう。こ
のセラミツク被覆層中に巻込まれた炭素5が、ア
ーク溶接使用中にセラミツク被覆層の割れあるい
は剥離の原因になる。
したがつて、プラズマ溶射によりセラミツクを
被覆する場合は、超音波洗浄などにより基体表面
から油脂分を予め除去しておくことは、セラミツ
ク被覆層の強度を向上させるうえで重要である。
また、アーク溶接用コンタクトチツプ基体は、
主として銅合金またはアルミニウム合金を素材と
しており、表面には強固な酸化皮膜が形成されて
いる。酸化皮膜が存在する状態でプラズマセラミ
ツク被覆を施した場合第4図ロに示す如く基体と
セラミツク被覆層の間に酸化物層7が残存するこ
とになり、これがセラミツク被覆層の剥離の原因
となるため、基体表面の酸化皮膜をサンドブラス
トなどにより予め除去しておくことはセラミツク
被覆層の密着性を一層向上させるうえで重要であ
る。因みに、中間に酸化物層が残存しているもの
と、残存していないもののセラミツク被覆層の剥
離強度を比較してみると、前者は後者の約50%程
度と著るしく剥離強度が低いことが確認された。
コンタクトチツプ基体が銅合金あるいはアルミニ
ウム合金を素材としている場合は、一旦酸化皮膜
を除去しても、大気中に放置しておくと再び強固
な酸化皮膜を形成するため、サンドブラスト等に
より酸化皮膜を除去した後ニツケル−クロム合金
などの耐酸化性金属4で被覆しておくことは作業
性の点で有利であるばかりでなく、セラミツクと
結合しやすい金属例えばNi−Cr系合金を選択す
れば密着性をさらに向上させるうえで有効であ
る。
本願発明においては、前述の前処理を施した
後、セラミツクをプラズマ溶射をおこなうもので
ある。プラズマ溶射においては、プラズマ火焔自
体の温度は6000〜10000℃であるが、特に酸化条
件下(空気中)では火焔距離が短かく、かつセラ
ミツク粒子の粒子も小さいこともあつて、被溶射
面に伝達される熱エネルギーは比較的小さく、通
常の大きさのアーク溶接用コンタクトチツプを対
象とした場合、その温度上昇は100〜150℃に抑え
ることができる。これは、CVD法またはPVD法
を適用してセラミツク被覆を施した場合基体の温
度が500℃以上に加熱されるのに対し大きな利点
をもたらす。
すなわち、アーク溶接用コンタクトチツプは通
常銅合金またはアルミニウム合金で構成されてお
り、銅合金では、250℃前後から焼鈍軟化現象が
おこるため、従来のCVD法またはPVD法を適用
した場合加工硬化していたコンタクトチツプに硬
度の低下、曲げ強度の低下がもたらされる。これ
に対し本願発明の如く、プラズマ溶射により、セ
ラミツクの被覆を施した場合、基体の温度が250
℃以上に上昇することがないため焼鈍軟化現象は
全く起らず再度の硬化処理は全く必要がない。
プラズマ溶射によりセラミツク被覆した場合の
他の大きな利点は、CVD法またはPVD法を適用
した場合セラミツク被覆層の厚さに限界があり通
常その厚さを10μ以上にすることが困難であるの
に対し、プラズマ溶射の場合は任意の厚さのセラ
ミツク被覆層を形成することができ、100μ〜
200μの厚さのセラミツク層を形成することも可
能である。アーク溶接用コンタクトチツプにセラ
ミツク被覆を施す効果は、スパツタ付着防止のほ
かに溶接中の輻射熱を遮断し、コンタクトチツプ
の溶接中の輻射熱による焼鈍軟化を防止すること
である。
しかしながら、CVD法またはPVD法を用いた
場合、前述のとおりセラミツク被覆層の厚さを
10μ以上にすることは困難であり、この程度の厚
さのセラミツク被覆層では、溶接中の輻射熱によ
る焼鈍軟化現象を充分防止できず、溶接中に硬度
低下、ひいては耐摩耗性の低下を招き、ワイヤ通
過に伴う摩耗が大きくなる。これに対し、本発明
の如くプラズマ溶射によりセラミツク被覆層を形
成する場合は前述のようにセラミツク被覆層を厚
さを任意にとることができ、100〜200μ程度の厚
さのセラミツク被覆層も容易に形成することがで
きるため、溶接中の輻射熱を効果的に遮断でき焼
鈍軟化を防止することができるため、溶接中にお
いても硬度低下が起きず耐摩耗性を保持できる。
コンタクトチツプの素材としては、導電性と耐
熱性を有するものであればCu−Ni系、Cu−Cr
系、Cu−Cr−Zr系、Cu−Be系合金、Al−Mg系
などの種々の公知の銅合金またはアルミニウム合
金を用いることができることは言うまでもない。
また、本発明に用いられるセラミツク材料とし
ては、プラズマ溶射用として市販されているいず
れのセラミツクを用いて所定の効果を得ることが
できるが、本発明者等の実験結果から、Al2O3
系、Al2O3−TiO2系、Tio2系、CrO3系、Cr2O3−
SiO2系、SiC系、Si3N4系およびBN系のセラミツ
クを用いた場合特に顕著な効果が得られることが
判明している。
本発明においては、最後に研磨処理を施してい
るが、これは以下の技術的理由に基づいている。
すなわち、前述のとおり、アーク溶接中に、高
温球体のスパツタが飛散し、その一部が第5図
イ,ロに示すようにコンタクトチツプ表面に付着
する。このスパツタの付着の態様を調査してみる
と、コンタクトチツプの特に表面部の素材に左右
されることはもちろんであるが、その表面の面粗
度も極めて大きな要因となつていることが判明し
た。
スパツタ付着を考えるとき、素材に関してはス
パツタとの化学反応を主に考慮すればよいが、表
面状態については、特に化学的だかりでなく物理
的な面からも考えなければならない。すなわち、
第4図ロに示すように表面の凹部では物理的なか
かえ込みによる付着が発生し、凸部では熱化学反
応に生じ、その相乗効果によりスパツタ付着が促
進され、除去が困難になる。CVD法またはPVD
法を適用する場合は、基体表面を平滑にしてから
セラミツクを被覆するためその後の研磨処理はそ
れほど必要性はないが、本願発明においては、前
述のとおり前処理としてサンドブラストなどの処
理を施すため基体表面粗度が粗くかつプラズマ溶
射によつて溶融セラミツク球体を高速で基体表面
にたたき付けるため被覆後の表面粗度は比較的粗
く凹凸状態を呈するため、このままでは前述のと
おりスパツタ付着が起き易すい。
したがつて、本発明の如くプラズマ溶射による
セラミツク被覆をおこなう場合は、被覆後の例え
ばサンドペーパーあるいは砥粒などによつて研磨
処理を施し表面を平滑にする必要がある。表面が
平滑である場合凹部におけるスパツタ粒のかかえ
込みによる付着を防止できるとともに、たとえ、
スパツタ粒が基体表面に一旦付着してもその付着
は第4図イに示すように点接触により付着してい
る状態であるので、容易に除去することができ
る。本発明者等の実験結果によると、20S以下に
すれば前記効果が得られるが、工業的には
特に、5S以下にすれば、耐スパツタ性、耐反
応性をより一層効果的に向上させることができる
ことが判明した。
〔実施例〕
<実施例 1>
Ni:0.85〜1.0%、Si:0.4〜0.6%残部銅からな
る銅−ニツケル合金を研削加工によりアーク溶接
用コンタクトチツプ基体1を作成し、これに次の
工程でセラミツク被覆を施した。
まず、コンタクトチツプ基体を(1)水中に沈め、
通常の超音波アルカリ洗浄処理を3〜5分間施し
表面に付着している油脂分を完全に除去し、次に
サンドブラスト処理を1分間施し基体表面の酸化
皮膜を破壊除去した後、直ちにAl2O3を下記の条
件でプラズマ溶射で吹きつけ基体表面上に125μ
の厚さのAl2O3被覆層3を形成し、最後にSiC系
#180のサンドペーパーで研磨処理し平滑な表面
のAl2O3被覆アーク溶接用コンタクトチツプを作
成した。
[Industrial Application Field] The present invention provides a contact chip for arc welding,
This invention relates to a method of applying ceramic coatings to improve wear resistance, spatter resistance and reaction resistance. [Prior art] Contact tips for arc welding are usually made of copper-based alloys or aluminum alloys, but since the surface of the contact tip is metal, the nozzle part may wear out due to spatter adhesion or thermochemical reactions during welding. Otherwise, clogging occurred, which significantly shortened the life of the contact tip. As a method to solve the above-mentioned problems, as described in Japanese Utility Model Application Publication No. 52-26630, Japanese Utility Model Application Publication No. 59-49478, or Japanese Utility Model Application Publication No. 57-82484,
A method of protecting the nozzle part of a contact tip with a ceramic guide. Or Utility Model Application Publication No. 76021/1983, Utility Model Application Publication No. 57-
A method of coating contact chips with ceramic has been proposed as described in Japanese Patent No. 160887. However, the above-mentioned method of protecting the nozzle part with a ceramic guide not only complicates the structure of the contact chip and causes problems in terms of manufacturing costs, but also has the problem that the entire contact chip cannot be protected from spatter that is scattered over a wide area. It was hot. On the other hand, the method of coating the contact chip with ceramic has the potential to solve the problem of complicating the structure and protecting the entire chip, but the coating method has not yet been established, and depending on the coating method, it may not be possible to use it. Occasionally, there were problems such as cracking or peeling of the ceramic layer. As a result of intensive research into a method of coating a contact chip with ceramic, the inventors of the present invention developed a method of coating ceramic with a PVD method or a CVD method, and previously filed an application as Utility Model Application No. 163202/1983. As a result of further research into this method, the present inventors succeeded in improving the spatter resistance and reaction resistance of contact chips and significantly extending their lifespan using the technology disclosed in Utility Application No. 163202/1983. However, even with this technology, the thickness of the ceramic coating layer remains
If it is less than 10μ, the heat insulation effect is not sufficient, and when applying CVD and PVD methods, it is necessary to heat the contact chip to about 500 to 1000℃, respectively.
This heating causes the contact tip to become annealed, resulting in a decrease in hardness, which increases wire wear and reduces strength, making accurate welding difficult.To prevent this, further hardening treatment is required after ceramic coating. We found that there are several issues that need further improvement, such as the need to perform [Problems to be Solved by the Invention] The present invention solves the problems of cracking, peeling, film thickness, and annealing softening of the ceramic coating layer, which were problems when applying a ceramic coating to a contact chip for arc welding. The aim is to provide a way to solve both problems at the same time. [Means for Solving the Problems] As a result of intensive research and development of means for achieving the above-mentioned object, the present invention has revealed that when a contact chip is coated with ceramic by plasma spraying,
The thickness of the ceramic coating can be set as desired.
It was also developed after discovering that its adhesion is strong, and that the temperature of the contact chip base during the ceramic coating process can be suppressed to about 100°C, preventing the contact chip base from becoming annealed and softened.Specifically, arc welding After cleaning the surface of the contact chip substrate, such as degreasing by ultrasonic cleaning and removing oxide film by sandblasting, an oxidation-resistant metal is sprayed as necessary, then a ceramic is plasma sprayed, and finally, By employing a structure in which the surface is smoothed, the above-mentioned problems are simultaneously solved. [Operation] Since the contact tip base body 1 for arc welding is usually manufactured by forging or grinding, oils and fats such as lubricating oil are attached to the surface of the base body. When ceramic plasma is sprayed with oil and fat adhered to it, the flame distance is generally short in plasma spraying, and the thermal energy transmitted to the substrate surface is small, making it difficult to completely remove the oil and fat from the substrate surface by scattering. As shown in Figure 4 A, carbon 5
In this state, it gets rolled up in the ceramic coating layer 3. The carbon 5 entrapped in the ceramic coating layer causes cracking or peeling of the ceramic coating layer during use of arc welding. Therefore, when coating ceramic by plasma spraying, it is important to remove oil and fat from the substrate surface in advance by ultrasonic cleaning or the like in order to improve the strength of the ceramic coating layer. In addition, the contact tip base for arc welding is
It is mainly made of copper alloy or aluminum alloy, and has a strong oxide film formed on its surface. If a plasma ceramic coating is applied in the presence of an oxide film, an oxide layer 7 will remain between the substrate and the ceramic coating layer as shown in Figure 4B, and this will cause the ceramic coating layer to peel off. Therefore, it is important to remove the oxide film on the surface of the substrate in advance by sandblasting or the like in order to further improve the adhesion of the ceramic coating layer. Incidentally, when we compare the peel strength of ceramic coating layers with and without an oxide layer remaining in the middle, we find that the former has a significantly lower peel strength of about 50% of the latter. was confirmed.
If the contact chip base is made of copper alloy or aluminum alloy, even if the oxide film is removed, a strong oxide film will form again if left exposed to the atmosphere, so remove the oxide film by sandblasting, etc. It is not only advantageous in terms of workability to coat the ceramic with an oxidation-resistant metal 4 such as a nickel-chromium alloy, but also to improve adhesion by selecting a metal that easily bonds with ceramics, such as a Ni-Cr alloy. It is effective in further improving the In the present invention, after the above-described pretreatment, the ceramic is subjected to plasma spraying. In plasma spraying, the temperature of the plasma flame itself is 6,000 to 10,000°C, but especially under oxidizing conditions (in air), the flame distance is short and the ceramic particles are small, so the temperature of the plasma flame itself is 6,000 to 10,000°C. The thermal energy transferred is relatively small, and the temperature rise can be limited to 100-150°C for a normal-sized arc welding contact tip. This is a great advantage compared to the case where the ceramic coating is applied using the CVD method or the PVD method, in which the temperature of the substrate is heated to 500° C. or higher. In other words, contact tips for arc welding are usually made of copper alloy or aluminum alloy. Copper alloys undergo an annealing softening phenomenon at around 250°C, so when conventional CVD or PVD methods are applied, they are work hardened. This results in a decrease in hardness and bending strength of the contact tip. On the other hand, when the ceramic coating is applied by plasma spraying as in the present invention, the temperature of the substrate is 250°C.
Since the temperature does not rise above .degree. C., no annealing softening phenomenon occurs and there is no need for another hardening treatment. Another major advantage of ceramic coating by plasma spraying is that when CVD or PVD methods are applied, there is a limit to the thickness of the ceramic coating layer, and it is usually difficult to increase the thickness to 10μ or more. , in the case of plasma spraying, it is possible to form a ceramic coating layer of any thickness, from 100μ to
It is also possible to form ceramic layers with a thickness of 200μ. The effect of applying a ceramic coating to a contact tip for arc welding is not only to prevent spatter adhesion but also to block radiant heat during welding and prevent annealing and softening of the contact tip due to radiant heat during welding. However, when using the CVD or PVD method, the thickness of the ceramic coating layer can be adjusted as described above.
It is difficult to achieve a thickness of 10μ or more, and a ceramic coating layer of this thickness cannot sufficiently prevent the annealing softening phenomenon caused by radiant heat during welding, resulting in a decrease in hardness during welding and, ultimately, a decrease in wear resistance. Wear increases as the wire passes through it. On the other hand, when a ceramic coating layer is formed by plasma spraying as in the present invention, the thickness of the ceramic coating layer can be arbitrarily determined as described above, and a ceramic coating layer with a thickness of about 100 to 200 μm can be easily formed. Since the radiant heat during welding can be effectively blocked and annealing softening can be prevented, the hardness does not decrease even during welding and wear resistance can be maintained. Contact chip materials include Cu-Ni and Cu-Cr as long as they have conductivity and heat resistance.
It goes without saying that various known copper alloys or aluminum alloys such as Cu-Cr-Zr alloys, Cu-Cr-Zr alloys, Cu-Be alloys, and Al-Mg alloys can be used. Further, as the ceramic material used in the present invention, any ceramic material commercially available for plasma spraying can be used to obtain the desired effect, but from the experimental results of the present inventors, Al 2 O 3
system, Al 2 O 3 −TiO 2 system, Tio 2 system, CrO 3 system, Cr 2 O 3 −
It has been found that particularly remarkable effects can be obtained when SiO 2 -based, SiC-based, Si 3 N 4 -based and BN-based ceramics are used. In the present invention, polishing treatment is performed at the end, and this is based on the following technical reasons. That is, as described above, during arc welding, spatter from high-temperature spheres is scattered, and a portion of it is attached to the surface of the contact chip as shown in FIGS. 5A and 5B. When investigating the manner in which this spatter adheres, it was found that not only does it depend on the material of the surface of the contact chip, but the roughness of the surface is also an extremely important factor. . When considering spatter adhesion, the chemical reaction with the material should be mainly considered, but the surface condition must also be considered not only from a chemical perspective but also from a physical perspective. That is,
As shown in FIG. 4B, adhesion occurs in the concave portions of the surface due to physical entrapment, and in the convex portions, a thermochemical reaction occurs, and the synergistic effect promotes spatter adhesion, making removal difficult. CVD method or PVD
When applying this method, the surface of the substrate is smoothed before being coated with ceramic, so subsequent polishing treatment is not so necessary. However, in the present invention, as mentioned above, the substrate The surface roughness is rough, and since the molten ceramic spheres are hit on the substrate surface at high speed by plasma spraying, the surface roughness after coating is relatively rough and uneven, so as mentioned above, spatter adhesion is likely to occur if left as is. . Therefore, when coating ceramics by plasma spraying as in the present invention, it is necessary to polish the surface after coating with sandpaper or abrasive grains to smooth the surface. If the surface is smooth, it is possible to prevent adhesion due to spatter particles being caught in the recesses, and even if
Even if the spatter particles once adhere to the surface of the substrate, they can be easily removed because they are attached by point contact as shown in FIG. 4A. According to the experimental results of the present inventors, the above effects can be obtained by reducing the temperature to 20S or less, but from an industrial perspective, especially if the temperature is 5S or less, spatter resistance and reaction resistance can be improved even more effectively. It turned out that it can be done. [Example] <Example 1> A contact chip base 1 for arc welding was prepared by grinding a copper-nickel alloy consisting of Ni: 0.85 to 1.0%, Si: 0.4 to 0.6% and the balance copper, and this was subjected to the following process. Ceramic coating was applied. First, (1) submerge the contact chip base in water,
A normal ultrasonic alkaline cleaning treatment is applied for 3 to 5 minutes to completely remove the oil and fat adhering to the surface, and then a sandblasting treatment is applied for 1 minute to destroy and remove the oxide film on the substrate surface. Immediately after that, Al 2 O 3 by plasma spraying under the following conditions to 125 μm on the substrate surface.
An Al 2 O 3 coating layer 3 having a thickness of 100 mL was formed, and finally polished with SiC #180 sandpaper to produce an Al 2 O 3 coated contact tip for arc welding with a smooth surface.
【表】
前記の工程で作成したアーク溶接用コンタクト
チツプ、CVD法によつてAl2O3被覆を施したアー
ク溶接用コンタクトチツプおよび被覆なしのアー
ク溶接用コンタクトチツプの3種について実際の
溶接条件で24時間使用し、そのスパツタ付着量お
よびワイヤによる摩耗量を測定した結果以下のと
おりで本発明によつて作成したアーク溶接用コン
タクトチツプがスパツタ付着量が最も少なくかつ
ワイヤによる摩耗量も最も小さいことがわかる。[Table] Actual welding conditions for three types: the arc welding contact chip made in the above process, the arc welding contact chip coated with Al 2 O 3 by CVD method, and the arc welding contact chip without coating. The results of measuring the amount of spatter deposited and the amount of wear due to the wire after using it for 24 hours are as follows: The contact tip for arc welding made according to the present invention has the least amount of spatter deposit and the amount of wear due to the wire. I understand that.
【表】
<実施例 2>
実施例1と同様に銅−ニツケル合金で作成した
アーク溶接用コンタクトチツプ基体に超音波洗浄
および/または(超音波+フロン)洗浄して、さ
らに酸化皮膜の破壊除去処理を施した後、Ni:
80%、Cr:20%のニツケル−クロム合金粉末
(粒度−105〜+45μ)を下記条件下で溶射被覆し
た後、実施例1と同様にAl2O3をプラズマ溶射
し、最後に研磨処理を施しアーク溶接用コンタク
トチツプを作成した。[Table] <Example 2> As in Example 1, the base of an arc welding contact chip made of a copper-nickel alloy was subjected to ultrasonic cleaning and/or (ultrasonic + Freon) cleaning, and the oxide film was further destroyed and removed. After treatment, Ni:
After thermal spray coating with 80% Cr:20% nickel-chromium alloy powder (particle size -105 to +45μ) under the following conditions, Al 2 O 3 was plasma sprayed in the same manner as in Example 1, and finally a polishing treatment was performed. A contact tip for arc welding was created.
【表】
この工程により作成したアーク溶接用コンタク
トチツプと実施例1によつて作成したアーク溶接
用コンタクトチツプについてスパツタ付着量およ
び摩耗量については実施例1と同条件で、また密
着強度については剥離が起きるまでの時間を試験
した結果は次のとおりであり、この実施例2によ
つて作成したアーク溶接用コンタクトチツプの方
が実施例1で作成したものよりも特にセラミツク
の密着強度において一層改善されていることがわ
かる。[Table] Regarding the arc welding contact tip made by this process and the arc welding contact tip made according to Example 1, the spatter adhesion amount and wear amount were under the same conditions as Example 1, and the adhesion strength was measured under the same conditions as Example 1. The results of testing the time taken for this to occur are as follows: The arc welding contact tip made in Example 2 was much better than the one made in Example 1, especially in terms of adhesion strength to ceramic. I can see that it is being done.
【表】
<実施例 3>
銅−ベリリウム合金(Be:1.8〜2.0%)合金製
アーク溶接用コンタクトチツプに、実施例1と同
様の表面清浄化処理を施した後、下記の条件でニ
ツケル−クロム合金を溶射被覆した。[Table] <Example 3> A contact tip for arc welding made of a copper-beryllium alloy (Be: 1.8-2.0%) was subjected to the same surface cleaning treatment as in Example 1, and then treated with nickel under the following conditions. Thermal spray coated with chromium alloy.
【表】
次に、該溶射被覆したコンタクトチツプを、真
空チヤンバー中の回転軸に固定して真空チヤンバ
ーを真空にし、ついでArで置換する溶射直前チ
ヤンバーのガス抜き弁を安全に(膨張したガスの
排出のため)openにして、下記の条件下でSi3N4
系セラミツクをプラズマ溶射を施し、最後に実施
例1と同様の研磨処理を施してSi3N4系セラミツ
ク被覆アーク溶接用コンタクトチツプを作成し
た。[Table] Next, the spray-coated contact chip is fixed to the rotating shaft in a vacuum chamber, the vacuum chamber is evacuated, and the gas vent valve of the chamber immediately before the spraying is replaced with Ar. Si 3 N 4 under the following conditions: open for discharge)
The Si 3 N 4 based ceramic was subjected to plasma spraying and finally subjected to the same polishing treatment as in Example 1 to produce an Si 3 N 4 based ceramic coated contact tip for arc welding.
【表】
前記工程で作成したアーク溶接用コンタクトチ
ツプを実施例2と同様の試験をおこなつた結果は
次のとおりであつた。[Table] The arc welding contact tip produced in the above process was subjected to the same test as in Example 2, and the results were as follows.
【表】
<実施例 4>
以下、プラズマ溶射材料としてAl2O3−TiO2,
TiO2,Cr2O3,Cr2O3−SiO2およびBNを選択し、
実施例1および実施例2と同様の工程でセラミツ
ク被覆を施したものについてスパツタ付着量、お
よび密着強度を測定した結果は次のとおりであ
る。[Table] <Example 4> Below, Al 2 O 3 −TiO 2 ,
Select TiO 2 , Cr 2 O 3 , Cr 2 O 3 −SiO 2 and BN,
The results of measuring the spatter adhesion amount and adhesion strength of ceramic coatings applied in the same steps as in Examples 1 and 2 are as follows.
【表】【table】
以上詳細に説明したとおり、本発明は、セラミ
ツク被覆という表面材質の変換および表面の平滑
化によりスパツタ付着量を減少させるばかりでな
く、従来のCVDまたはPVD法によるセラミツク
被覆処理で問題となつていた被覆処理中の焼鈍軟
化およびセラミツク被覆層の厚さの限界からくる
アーク溶接中の輻射熱による焼鈍軟化によつて加
速される摩耗の問題を同時に解決したものであ
る。そして、アーク溶接用コンタクトチツプの寿
命が、スパツタ付着による目づまりおよびワイヤ
通過による摩耗により決定的に左右されることを
考慮すれば、その問題を同時に解決した本発明
は、アーク溶接産業上極めて大きな効果を有する
ものと言える。
As explained in detail above, the present invention not only reduces the amount of spatter adhesion by changing the surface material of ceramic coating and smoothing the surface, but also reduces the amount of spatter adhesion, which has been a problem with conventional ceramic coating treatments using CVD or PVD methods. This solution simultaneously solves the problem of accelerated wear due to annealing softening during coating treatment and annealing softening due to radiant heat during arc welding due to the limit of the thickness of the ceramic coating layer. Considering that the lifespan of arc welding contact tips is determined by clogging due to adhesion of spatter and wear due to wire passage, the present invention, which simultaneously solves these problems, has an extremely large impact on the arc welding industry. It can be said that it has an effect.
第1図はプラズマ溶射する前のアーク溶接用コ
ンタクトチツプを示す図、第2図は清浄化処理後
直ちにセラミツクプラズマ溶射被覆した場合のア
ーク溶接用コンタクトチツプを示す図、第3図は
清浄化処理を施した後耐酸化性金属を溶射し、次
にセラミツクプラズマ溶射被覆した場合のアーク
溶接用コンタクトチツプを示す図、第4図は脱脂
処理を施さず直接セラミツクプラズマ溶接被覆を
施した場合のアーク溶接用コンタクトチツプの表
面処理を示す図、第5図イ,ロはそれぞれアーク
溶接用コンタクトチツプの表面が平滑である場合
と凹凸状態を呈する場合のスパツタ付着状況を示
す図。
1……アーク溶接用コンタクトチツプ基体、2
……ワイヤ通過孔、3……セラミツク被覆層、4
……耐酸化金属層、5……炭素、6……スパツタ
付着粒、7……酸化物層。
Figure 1 shows an arc welding contact chip before plasma spraying, Figure 2 shows an arc welding contact chip coated with ceramic plasma spray immediately after cleaning treatment, and Figure 3 shows cleaning treatment. Fig. 4 shows an arc welding contact chip in which an oxidation-resistant metal is thermally sprayed and then a ceramic plasma spray coating is applied. FIGS. 5A and 5B are diagrams showing the surface treatment of a contact tip for welding; FIGS. 5A and 5B are views showing spatter adhesion when the surface of the contact tip for arc welding is smooth and uneven, respectively; FIGS. 1...Contact chip base for arc welding, 2
...Wire passing hole, 3...Ceramic coating layer, 4
... Oxidation-resistant metal layer, 5 ... Carbon, 6 ... Spatter adhesion particles, 7 ... Oxide layer.
Claims (1)
に、清浄化処理を施した後、セラミツクのプラズ
マ溶射被覆を施し、次に溶射面に研磨処理を施す
ことを特徴とするアーク溶接用コンタクトチツプ
のセラミツク被覆方法。 2 前記清浄化処理が超音波洗浄および/または
(超音波+フロン)洗浄による脱脂とサンドブラ
ストによる酸化皮膜除去とからなることを特徴と
する特許請求の範囲第1項記載のアーク溶接用コ
ンタクトチツプのセラミツク被覆方法。 3 前記アーク溶接用コンタクトチツプが銅系合
金またはアルミニウム系合金を素材とすることを
特徴とする特許請求の範囲第1項または第2項記
載のアーク溶接用コンタクトチツプのセラミツク
被覆方法。 4 アーク溶接用コンタクトチツプ基体表面に、
清浄化処理を施し次に耐酸化性金属を溶射被覆す
る前処理工程を施した後、セラミツクのプラズマ
溶射被覆を施し、次に溶射面に研磨処理を施すこ
とを特徴とするアーク溶接用コンタクトチツプの
セラミツク被覆方法。 5 前記清浄化処理が超音波洗浄および/または
(超音波+フロン)清浄による脱脂とサンドブラ
ストによる酸化皮膜除去とからなることを特徴と
する特許請求の範囲第4項記載のアーク溶射用コ
ンタクトチツプのセラミツク被覆方法。 6 前記アーク溶接用コンタクトチツプが鋼系合
金またはアルミニウム系合金を素材とすることを
特徴とする特許請求の範囲第4項または第5項記
載のアーク溶接用コンタクトチツプのセラミツク
被覆方法。 7 前記耐酸化性金属がニツケル−クロム系合金
であることを特徴とする特許請求の範囲第4項な
いし第6項のいずれか記載のアーク溶接用コンタ
クトチツプのセラミツク被覆方法。[Scope of Claims] 1. A contact tip for arc welding, characterized in that the surface of the base body is subjected to a cleaning treatment, then a ceramic plasma spray coating is applied, and then the sprayed surface is subjected to a polishing treatment. Ceramic coating method for contact tips. 2. The arc welding contact chip according to claim 1, wherein the cleaning treatment comprises degreasing by ultrasonic cleaning and/or (ultrasonic + Freon) cleaning and removing oxide film by sandblasting. Ceramic coating method. 3. The method of coating a contact tip for arc welding with ceramic according to claim 1 or 2, wherein the contact tip for arc welding is made of a copper-based alloy or an aluminum-based alloy. 4 On the surface of the contact chip base for arc welding,
A contact chip for arc welding characterized in that a cleaning treatment is performed, a pretreatment process is then performed in which an oxidation-resistant metal is thermally sprayed, a ceramic plasma-sprayed coating is applied, and the thermally sprayed surface is then polished. Ceramic coating method. 5. The contact tip for arc thermal spraying according to claim 4, wherein the cleaning treatment comprises degreasing by ultrasonic cleaning and/or (ultrasonic + Freon) cleaning, and removing oxide film by sandblasting. Ceramic coating method. 6. The method of coating a contact tip for arc welding with ceramic according to claim 4 or 5, wherein the contact tip for arc welding is made of a steel alloy or an aluminum alloy. 7. A ceramic coating method for an arc welding contact tip according to any one of claims 4 to 6, wherein the oxidation-resistant metal is a nickel-chromium alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057222A JPS61217567A (en) | 1985-03-20 | 1985-03-20 | Method for coating contact tip for arc welding with ceramic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60057222A JPS61217567A (en) | 1985-03-20 | 1985-03-20 | Method for coating contact tip for arc welding with ceramic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61217567A JPS61217567A (en) | 1986-09-27 |
| JPH0140910B2 true JPH0140910B2 (en) | 1989-09-01 |
Family
ID=13049499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60057222A Granted JPS61217567A (en) | 1985-03-20 | 1985-03-20 | Method for coating contact tip for arc welding with ceramic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61217567A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102123815B (en) * | 2008-08-13 | 2016-04-13 | 米亚基株式会社 | Arc welding torch |
-
1985
- 1985-03-20 JP JP60057222A patent/JPS61217567A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61217567A (en) | 1986-09-27 |
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