JPH0145176B2 - - Google Patents
Info
- Publication number
- JPH0145176B2 JPH0145176B2 JP57118228A JP11822882A JPH0145176B2 JP H0145176 B2 JPH0145176 B2 JP H0145176B2 JP 57118228 A JP57118228 A JP 57118228A JP 11822882 A JP11822882 A JP 11822882A JP H0145176 B2 JPH0145176 B2 JP H0145176B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- detector
- electric field
- charged particle
- secondary charged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Description
【発明の詳細な説明】
本発明は、走査型電子顕微鏡およびその類似装
置に関し、特に2次電子のごとき2次荷電粒子を
検出するための装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to scanning electron microscopes and similar devices, and in particular to devices for detecting secondary charged particles such as secondary electrons.
従来の走査型電子顕微鏡における2次電子検出
装置としては、第1図に示すようなものがあり、
複数個(この例では2個)の検出器1,1′が試
料2からの2次電子を検出するために集束レンズ
(対物レンズ)3の上方において軸対称に配設さ
れている。 There is a secondary electron detection device for a conventional scanning electron microscope, as shown in Figure 1.
A plurality of (two in this example) detectors 1, 1' are arranged axially symmetrically above a focusing lens (objective lens) 3 to detect secondary electrons from a sample 2.
しかしながらこのような従来の2次電子検出装
置では、光軸のずれや非点収差が生じにくくなる
半面、次の理由により試料像の中央部分が暗くな
るという問題点がある。すなわち検出器1,1′
を軸対称に設けた場合、各検出器1,1′に印加
された高電圧によつて生じる等電界分布E,E′が
第1図に示すようになるため、2次電子A,Cは
それぞれ検出器1,1′で検出されるが、2次電
子Bは両検出器1,1′の相互間を通過してどち
らの検出器1,1′にも検出されずに上方へ逸出
してしまい、これにより試料像の中央部分は暗く
なるのである。 However, in such a conventional secondary electron detection device, although optical axis deviation and astigmatism are less likely to occur, there is a problem in that the central portion of the sample image becomes dark due to the following reason. That is, detectors 1, 1'
When installed axially symmetrically, the equal electric field distributions E and E' caused by the high voltage applied to each detector 1 and 1' become as shown in Figure 1, so the secondary electrons A and C are They are detected by detectors 1 and 1', respectively, but secondary electron B passes between both detectors 1 and 1' and escapes upward without being detected by either detector 1 or 1'. This causes the central part of the sample image to become dark.
本発明は、このような問題点を解決しようとす
るもので、電界分布の関係でいずれの検出器にも
検出されずに上方へ逸出してしまう2次荷電粒子
をも検出できるようにして、均一な明るさの試料
像を得られるようにした、走査型電子顕微鏡およ
びその類似装置における2次荷電粒子検出装置を
提供することを目的とする。 The present invention aims to solve such problems by making it possible to detect secondary charged particles that escape upward without being detected by any detector due to the electric field distribution. An object of the present invention is to provide a secondary charged particle detection device for a scanning electron microscope and similar devices, which can obtain a sample image with uniform brightness.
このため、本発明の装置は、走査型電子顕微鏡
およびその類似装置において、荷電粒子線の照射
を受けて試料から発生する2次荷電粒子を検出す
べく同試料の上方に配設された複数の検出器をそ
なえ、これらの検出器の相互間を通過した上記2
次荷電粒子の逸出分を戻して上記検出器へ導くべ
く、上記2次荷電粒子の逸出分の進行の向きを変
更させる電界発生機構が設けられて、同電界発生
機構が、上記検出器の上方において上記荷電粒子
線の光軸と中心軸線を整合させるように配置され
た金属製パイプと、同パイプへ上記試料よりも負
の電圧をかけるべく同パイプと上記試料との間に
介装される直流電源とで構成されたことを特徴と
している。 Therefore, in a scanning electron microscope and similar devices, the device of the present invention uses a plurality of devices arranged above a sample to detect secondary charged particles generated from the sample when irradiated with a charged particle beam. 2 above, which is equipped with a detector and passes between these detectors.
In order to return the escaping portion of the secondary charged particles and guide them to the detector, an electric field generating mechanism is provided for changing the traveling direction of the escaping portion of the secondary charged particles. A metal pipe arranged above so that the optical axis of the charged particle beam and the central axis are aligned, and a metal pipe interposed between the pipe and the sample to apply a more negative voltage than the sample to the pipe. It is characterized by being configured with a DC power supply.
以下、図面により本発明の一実施例としての走
査型電子顕微鏡における2次電子検出装置につい
て説明すると、第2図はその配設状態を断面で示
す模式図であり、第2図中、第1図と同じ符号は
ほぼ同様の部分を示している。第2図に示すごと
く、本装置においても従来装置と同様、複数個
(2個)の検出器1,1′が試料2からの2次荷電
粒子としての2次電子を検出するために集束レン
ズ3の上方において軸対称に配設されている。 Hereinafter, a secondary electron detection device in a scanning electron microscope as an embodiment of the present invention will be explained with reference to the drawings. FIG. 2 is a schematic diagram showing the arrangement state in cross section. The same reference numerals as in the figure indicate substantially similar parts. As shown in Fig. 2, in this device, as in the conventional device, a plurality of (two) detectors 1, 1' are equipped with a focusing lens to detect secondary electrons as secondary charged particles from the sample 2. They are arranged axially symmetrically above 3.
ところで、それらの検出器1,1′の相互間を
通過した2次電子の逸出分Bを戻して検出器1又
は1′へ導くために、この2次電子の逸出分Bの
進行の向きを変更させるような電界(負の電界)
を発生する電界発生機構Mが設けられている。す
なわち各検出器1,1′よりもやや上方において、
金属製パイプ4がその中心軸と光軸Lとを整合さ
れるように設けられており、更にこのパイプ4へ
試料2よりも負の電圧(マイナス数ボルトからマ
イナス数十ボルト程度)をかけるために、パイプ
4と試料2との間に直流電源5が介装されてい
る。 By the way, in order to return the escaping portion B of the secondary electrons that have passed between the detectors 1 and 1' and guiding them to the detector 1 or 1', the progress of the escaping portion B of the secondary electrons is Electric field that causes the direction to change (negative electric field)
An electric field generating mechanism M that generates is provided. That is, slightly above each detector 1, 1',
A metal pipe 4 is provided so that its central axis and optical axis L are aligned, and a voltage (from minus several volts to minus several tens of volts) that is more negative than that of the sample 2 is applied to this pipe 4. A DC power supply 5 is interposed between the pipe 4 and the sample 2.
これにより荷電粒子線としての電子線6を受け
て試料2から発生する2次電子A,B,Cのうち
逸出分Bの進行方向を変更させるような電界すな
わち負の電界を、パイプ4と試料2との間の空間
に与えることができる。その結果特に従来は検出
器1,1′で検出されずに上方へ逸出していた2
次電子Bが、試料2側へ引き戻されるため、この
2次電子Bが2次電子A,Cと同様、検出器1又
は1′に検出されるのである。したがつて試料像
の中央部分が暗くなることもなく、均一な明るさ
の像が得られるのである。 As a result, an electric field, that is, a negative electric field, is applied to the pipe 4 to change the traveling direction of the escaping portion B of the secondary electrons A, B, and C generated from the sample 2 upon receiving the electron beam 6 as a charged particle beam. It can be applied to the space between the sample 2 and the sample 2. As a result, in particular, 2
Since the secondary electrons B are pulled back to the sample 2 side, the secondary electrons B are detected by the detector 1 or 1' in the same way as the secondary electrons A and C. Therefore, the central part of the sample image does not become dark, and an image with uniform brightness can be obtained.
この場合パイプ4にかけられる負の印加電圧は
数ボルトから数十ボルト程度(この位の値で十
分)であるので、入射電子線7への影響はない。 In this case, the negative applied voltage applied to the pipe 4 is approximately from several volts to several tens of volts (a value of this order is sufficient), so there is no effect on the incident electron beam 7.
なお試料2は、分解能をあげるために、集束レ
ンズ3内のレンズ中心点近傍に設けられている。 Note that the sample 2 is placed near the center point of the focusing lens 3 in order to improve resolution.
また、検出器1,1′は2次電子検出面(螢光
面)1a,1′a、ライトパイプ1b,1′bおよ
びフオトマルチプライヤ1c,1′c等をそなえ
て構成されており、これらの検出器1,1′は図
示しない信号加算器や増幅器等を介してCRT(陰
極線管)に接続されている。 Further, the detectors 1, 1' are configured with secondary electron detection surfaces (fluorescent surfaces) 1a, 1'a, light pipes 1b, 1'b, photomultipliers 1c, 1'c, etc. These detectors 1, 1' are connected to a CRT (cathode ray tube) via a signal adder, amplifier, etc. (not shown).
なお、検出器配設部分をほかの鏡筒部分から電
気的に絶縁してこの配設部分に負の印加電圧をか
けることにより、2次電子逸出分Bの進行の向き
を変更させるような電界を更に発生させるように
してもよい。 In addition, by electrically insulating the detector installation part from other lens barrel parts and applying a negative voltage to this installation part, it is possible to change the direction of movement of the secondary electron escaping portion B. An electric field may be further generated.
また、検出器を3個以上設けた場合も同様に本
発明を適用することができ、さらにこれらの検出
器を、軸対称に配設するほか、点対称に配設した
り、周上に沿い等間隔に配設したりした場合でも
同様に本発明の適用が可能である。 Furthermore, the present invention can be similarly applied when three or more detectors are provided, and these detectors may be arranged axially symmetrically, point symmetrically, or along the circumference. The present invention can be applied in the same way even when the elements are arranged at equal intervals.
さらに、本発明は、走査型電子顕微鏡のほか、
これに類似する装置用の2次荷電粒子検出装置に
適用できる。 Furthermore, the present invention is applicable to scanning electron microscopes as well as
It can be applied to secondary charged particle detection devices for devices similar to this.
以上詳述したように、本発明の走査型電子顕微
鏡およびその類似装置における2次荷電粒子検出
装置によれば、荷電粒子線の照射を受けて試料か
ら発生する2次荷電粒子を検出すべく同試料の上
方に配設された複数の検出器をそなえ、これらの
検出器の相互間を通過した上記2次荷電粒子の逸
出分を戻して上記検出器へ導くべき、上記2次荷
電粒子の逸出分の進行の向きを変更させる電界発
生機構が設けられて、同電界発生機構が、上記検
出器の上方において上記荷電粒子線の光軸と中心
軸線を整合させるように配置された金属製パイプ
と、同パイプへ上記試料よりも負の電圧をかける
べく同パイプと上記試料との間に介装される直流
電源とで構成されるという簡素な手段で、光軸の
ずれや非点収差を生じることがなくなるほか、検
出器による電界分布の関係でいずれの検出器にも
検出されずに上方へ逸出した2次荷電粒子をも効
率よく引き戻して検出することができるので、均
一な明るさの試料像を実現できる利点がある。 As described in detail above, the secondary charged particle detection device in the scanning electron microscope and similar devices of the present invention detects secondary charged particles generated from a sample upon irradiation with a charged particle beam. A plurality of detectors are provided above the sample, and the secondary charged particles that have passed between these detectors are returned and guided to the detector. A metal device, which is provided with an electric field generating mechanism that changes the direction of the progress of the escaping component, and is arranged so that the optical axis of the charged particle beam and the central axis are aligned above the detector. This simple method consists of a pipe and a DC power supply interposed between the pipe and the sample to apply a more negative voltage to the pipe than the sample, and eliminates optical axis misalignment and astigmatism. In addition, secondary charged particles that escape upward without being detected by any of the detectors due to the electric field distribution of the detectors can be efficiently pulled back and detected, resulting in uniform brightness. This method has the advantage of being able to produce a sample image of a large size.
第1図は従来の走査型電子顕微鏡における2次
電子検出装置の配設状態を断面で示す模式図であ
り、第2図は本発明の一実施例としての走査型電
子顕微鏡における2次電子検出装置の配設状態を
断面で示す模式図である。
1,1′…検出器、1a,1′a…2次電子検出
面、1b,1′b…ライトパイプ、1c,1′c…
フオトマルチプライヤ、2…試料、3…集束レン
ズ、4…金属製パイプ、5…直流電源、6…電子
線(荷電粒子線)、A,B,C…2次電子(2次
荷電粒子)、L…光軸、M…電界発生機構。
FIG. 1 is a schematic cross-sectional view showing the arrangement of a secondary electron detection device in a conventional scanning electron microscope, and FIG. 2 is a diagram showing secondary electron detection in a scanning electron microscope as an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing the arrangement of the device. 1, 1'...Detector, 1a, 1'a...Secondary electron detection surface, 1b, 1'b...Light pipe, 1c, 1'c...
Photomultiplier, 2... Sample, 3... Focusing lens, 4... Metal pipe, 5... DC power supply, 6... Electron beam (charged particle beam), A, B, C... Secondary electron (secondary charged particle), L...Optical axis, M...Electric field generation mechanism.
Claims (1)
て、荷電粒子線の照射を受けて試料から発生する
2次荷電粒子を検出すべく同試料の上方に配設さ
れた複数の検出器をそなえ、これらの検出器の相
互間を通過した上記2次荷電粒子の逸出分を戻し
て上記検出器へ導くべく、上記2次荷電粒子の逸
出分の進行の向きを変更させる電界発生機構が設
けられて、同電界発生機構が、上記検出器の上方
において上記荷電粒子線の光軸と中心軸線を整合
させるように配置された金属製パイプと、同パイ
プへ上記試料よりも負の電圧をかけるべく同パイ
プと上記試料との間に介装される直流電源とで構
成されたことを特徴とする、走査型電子顕微鏡お
よびその類似装置における2次荷電粒子検出装
置。1. Scanning electron microscopes and similar devices are equipped with multiple detectors placed above the sample to detect secondary charged particles generated from the sample when irradiated with a charged particle beam. In order to return the escaping portion of the secondary charged particles that have passed between the containers and guiding them to the detector, an electric field generating mechanism is provided for changing the direction of the escaping portion of the secondary charged particles, The electric field generation mechanism includes a metal pipe arranged above the detector so as to align the optical axis of the charged particle beam with the central axis, and a metal pipe arranged to apply a more negative voltage than the sample to the pipe. 1. A secondary charged particle detection device for a scanning electron microscope and similar devices, comprising: and a DC power supply interposed between the sample and the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118228A JPS599843A (en) | 1982-07-07 | 1982-07-07 | Secondary charged particle detector in scanning type electron microscope and similar device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57118228A JPS599843A (en) | 1982-07-07 | 1982-07-07 | Secondary charged particle detector in scanning type electron microscope and similar device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599843A JPS599843A (en) | 1984-01-19 |
| JPH0145176B2 true JPH0145176B2 (en) | 1989-10-02 |
Family
ID=14731392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57118228A Granted JPS599843A (en) | 1982-07-07 | 1982-07-07 | Secondary charged particle detector in scanning type electron microscope and similar device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599843A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386340A (en) * | 1986-09-30 | 1988-04-16 | Fujitsu Ltd | Primary particle beam radiation device |
| WO2017006408A1 (en) * | 2015-07-06 | 2017-01-12 | 株式会社 日立ハイテクノロジーズ | Charged particle beam device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112767A (en) * | 1974-07-22 | 1976-01-31 | Nippon Electron Optics Lab | Sosagatadenshikenbikyo |
-
1982
- 1982-07-07 JP JP57118228A patent/JPS599843A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599843A (en) | 1984-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6498345B1 (en) | Particle beam device | |
| US4442355A (en) | Device for detecting secondary electrons in a scanning electron microscope | |
| JP3081393B2 (en) | Scanning electron microscope | |
| EP1288996B1 (en) | Particle beam apparatus | |
| US4728790A (en) | Low-abberation spectrometer objective with high secondary electron acceptance | |
| US9460886B2 (en) | High resolution high quantum efficiency electron bombarded CCD or CMOS imaging sensor | |
| JPH0337260B2 (en) | ||
| US5780859A (en) | Electrostatic-magnetic lens arrangement | |
| US3717761A (en) | Scanning electron microscope | |
| JPS5730253A (en) | Secondary electron detector for scan type electron microscope | |
| US3857034A (en) | Scanning charged beam particle beam microscope | |
| US6720557B2 (en) | Particle beam apparatus | |
| US6232601B1 (en) | Dynamically compensated objective lens-detection device and method | |
| EP0790634B1 (en) | Electrostatic-magnetic lens arrangement | |
| JPH03173054A (en) | Particle radiation device | |
| US6633034B1 (en) | Method and apparatus for imaging a specimen using low profile electron detector for charged particle beam imaging apparatus including electrostatic mirrors | |
| JP5280238B2 (en) | Charged particle beam equipment | |
| JPH0145176B2 (en) | ||
| JP3244620B2 (en) | Scanning electron microscope | |
| GB2215907A (en) | Charged particle apparatus | |
| JPH03295141A (en) | Detector | |
| USRE29500E (en) | Scanning charged beam particle beam microscope | |
| JP3101141B2 (en) | Electron beam equipment | |
| US3869611A (en) | Particle-beam device of the raster type | |
| US20240304412A1 (en) | Particle beam microscope |