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JPH0146460B2 - - Google Patents
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JPH0146460B2 - - Google Patents

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Publication number
JPH0146460B2
JPH0146460B2 JP17243584A JP17243584A JPH0146460B2 JP H0146460 B2 JPH0146460 B2 JP H0146460B2 JP 17243584 A JP17243584 A JP 17243584A JP 17243584 A JP17243584 A JP 17243584A JP H0146460 B2 JPH0146460 B2 JP H0146460B2
Authority
JP
Japan
Prior art keywords
glass
chemical durability
sio
less
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17243584A
Other languages
Japanese (ja)
Other versions
JPS6153130A (en
Inventor
Shigeki Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP59172435A priority Critical patent/JPS6153130A/en
Publication of JPS6153130A publication Critical patent/JPS6153130A/en
Publication of JPH0146460B2 publication Critical patent/JPH0146460B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Compositions (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は低膨張ガラス組成に関し、詳しくはフ
オトエツチングマスク用として好適な低膨張ガラ
ス組成に関する。 フオトエツチング法におけるガラスマスクは通
常ガラス板に蒸着法またはスパツタリング法等に
より金属クロムを膜付し、次いでフオトレジスト
を塗布し、該塗布面にレテイクル(中間原版)か
らの投影画像を露光して焼付し、さらに酸やアル
カリ等によるエツチングや洗浄によりフオトレジ
ストを剥離し、かつ膜付したクロムの不要部分を
除去してパターンを形成することにより得られ
る。 このガラスマスクは、たとえば集積回路の製作
に用いられ、予めフオトレジストを塗布したシリ
コン基板に前記クロムのパターンを形成したガラ
スマスクを当て、露光して焼付し、エツチング、
洗浄等を行うことにより、集積回路パターンを施
した基板が得られる。 フオトエツチングマスク用ガラスとして好まし
い条件は、前記露光過程において光からもたらさ
れる熱に充分耐え、また膨張収縮せず、したがつ
て基板にシヤープなパターンを抽けること、フオ
トレジストの焼付に効果的な短波長ことに紫外域
の光をよく透過すること、エツチングや洗浄過程
で用いられる酸あるいはアルカリ等に充分耐えう
ることが挙げられるが、勿論光を均一に透過させ
るうえで充分均質化されており気泡、未溶解、異
物、脈理等がなく、また表面がきわめて平滑であ
ることも重要な条件である。 (従来の技術) 従来フオトエツチングマスク用ガラスとして周
知のものは、SiO2−B2O3−Na2O系のパイレツク
スガラス(たとえば昭和47年1月15日発行セラミ
ツク手帳第604頁)があるが、組成中にSiO2を80
%以上も含有するため通常のガラス溶融温度すな
わち1500〜1550℃では溶融し難く、また粘性が高
いため泡切れが困難でかつ均質なガラスが得難い
という欠点があつた。 また、公知の低膨張ガラスとしては、SiO271.0
〜75.5wt%、Al2O32.2〜3.2wt%、B2O316.0〜
21.0wt%、CaO0〜0.6wt%、MgO0〜0.6wt%、
BaO0〜2wt%、ZnO0〜1wt%、Li2O0.4〜2.2wt
%、Na2O0.8〜3.3wt%、K2O0〜3.0wt%、Li2O
+Na2O+K2O3.3〜6.0wt%の成分が全体の98wt
%以上のガラス(特開昭49−39607号)や、
SiO255〜70mol%、Al2O37〜13mol%、CaO7〜
20mol%、MgO3〜13mol%、ZnO3〜13mol%、
K2OまたはNa2O0.5〜3mol%、PbO0〜11mol%、
ZrO20〜3mol%からなるフオトエツチングマスク
用ガラス(特開昭58−41736号)が知られている。 しかし、前者のガラスはAl2O3が少なく、一方
B2O3が過多のため耐熱性や化学的耐久性ことに
耐アルカリ性が充分とはいえず、加えて分相し易
く乳濁する傾向があるのでフオトレジストマスク
用として満足しうるものではなく、また、後者の
ガラスはCaOを含有するため必然的に膨張係数が
高くなり、精度の高いパターンは得られ難いし、
また、PbOを含有しない場合は液相温度が高く溶
融性が劣り、一方PbOの含有量を増加するに従い
著しく紫外線の透過性を劣化させ、さらにZrO2
を含有しない場合は化学的耐久性に劣り、ZrO2
の含有量を増加するに従い著しく液相温度を上昇
させ溶融性を悪化させるという問題があつた。 (発明が解決しようとする問題点) 従来組成のガラスは、耐熱性、化学的耐久性、
溶融性、紫外線透過性、膨張係数等のいずれかに
問題があつてフオトレジストマスク用として充分
満足しうるものではないが、本発明はこれらの条
件を満足したガラス組成物を提供するものであ
る。 (問題点を解決するための手段) 本発明に係るフオトエツチングマスク用として
好適な低膨張ガラスは重量パーセントで、
SiO255〜68%、Al2O315〜24%、B2O32〜8%、
MgO3〜10%、ZnO3〜10%、BaO0〜3%、
Na2O0〜2%であり、かつモル比で(Al2O3
B2O3)/(MgO+ZnO+BaO+Na2O)が0.9〜
1.1の範囲であることを特徴とするものである。 本発明は、まずSiO2−Al2O3−RO(二価金属酸
化物)の共融による比較的液相温度の低い組成範
囲を基本としたものであり、さらにB2O3を適度
に含有させることにより、液相温度をさらに下
げ、よつて通常のガラス溶融温度においても充分
溶融しうるようにしたものである。 なお、B2O3、SiO2、Al2O3は低膨張を与える
成分因子としてよく知られており、さらに二価金
属酸化物としてはMgO、ZnOが低膨張を与える
ものとして知られているが、CaO、PbOは低膨張
を得るにはネガテイブに作用するので不適当であ
り導入を避けるべきである。 化学的耐久性(耐酸、耐アルカリ性)では概し
てAl2O3が優れ、次いでSiO2も比較的優れてい
る。これらに次ぐものとして二価金属酸化物にお
いてZnOが優れているが、CaO、PbO等は劣るの
で好ましくない。なおZrO2は化学的耐久性に極
めて優れるが、液相温度を上昇させ溶融性を著し
く困難とするので適当ではない。 本発明における個々の各成分組成について言及
すれば、SiO2は68wt%(以下wt%を単に%と記
載する。)を超えると粘性が増大しことに清澄性
が悪化し、55%未満では熱膨張係数が高くなり、
失透の晶出速度が大となる。Al2O3は24%を超え
ると粘性が増大し、ことにAl2O3系脈理を発生し
易いが、15%未満では化学的耐久性が劣化する。
二価金属酸化物のうちMgOは熱膨張係数を減少
させるのに有効であるが10%を超えると化学的耐
久性、ことに耐酸性を著しく劣化させ、3%未満
では清澄性をも劣化させる。ZnOも比較的熱膨張
係数が低く、また粘性を低下させるのに有効であ
り、ことに化学的耐久性にすぐれるので前記
MgOの欠点を補うものであるが、3%未満では
それらの効果を小さく、10%を超えると失透の晶
出速度を大にし作業性を劣化させるので好ましく
ない。B2O3は溶剤として作用しかつ熱膨張係数
を低減させるが8%を越えると耐熱性や化学的耐
久性を劣化させ、3%未満では溶剤としての作用
が不充分である。 さらに任意成分としてNa2O0〜2%、およ
び/またはBaO0〜3%を硝酸塩あるいは硫酸塩
のかたちで導入すれば泡切れ、均質性に好結果が
得られる。なお、Na2OとBaOを併用する場合前
者を1%以下、後者を1.5%以下とすれば充分で
ある。加えてAS2O3を全重量に対して0.5%以下
添加すれば極めて短時間で泡切れ効果が得られ
る。 しかして、本組成範囲のガラスであれば液相温
度が1150℃以下であるので通常のガラス溶融温
度、1500〜1550℃で充分溶融でき、熱膨張係数
(25〜300℃)が25〜35×10-7cm/cm、℃と極めて
低いためたとえば集積回路の製作において基板に
集積度の高いシヤープなパターンを施すことがで
き、かつ化学的耐久性に富んでいるため酸、アル
カリ等のエツチング、洗浄に充分耐え、転移温度
が700℃前後であつて耐熱性も申し分ない。 さらに、通常基板への露光に際してはフオトレ
ジストの焼付に好適な短波長域の光線ことに紫外
線が多用される。しかるにガラス中のB2O3
Al2O3はSiO2に比べ、若干非架橋酸素を形成する
傾向があり、その非架橋酸素は周知のように紫外
線を吸収する性質があるので好ましくないが、前
記したB2O3、Al2O3に対しアルカリ金属や二価金
属の酸化物を均衡して導入することにより非架橋
酸素を形成し難くするものと推察され、結果とし
て紫外線の吸収を低減できる。 すなわち(B2O3+Al2O3)/(MgO+ZnO+
BaO+Na2O)のモル比を0.9〜1.1とすれば2mm
厚ガラスにおける紫外域の透過の下限は220〜250
mmとなり、たとえば特開昭58−41736号における
280〜300mm程度に対し紫外線を透過し易いことが
明らかである。 なお、本組成の範囲においてAl2O3/B2O3モル
比が1に近いと、得られるガラスは分相し易く、
したがつて乳濁する傾向にあることが実験的にほ
ぼ明らかとなつた。分相を防ぐためにはAl2O3
B2O3モル比が1.4以上であることが好ましく、一
方Al2O3/B2O3モル比が8を超えると液相温度が
高くなり溶融性に弊害を与える。またAl2O3
B2O3モル比が1.4特に1より小さい場合は化学的
耐久性等に悪影響を与える。 (実施例) 以下に本発明を実施例をもとに詳述する。 第1表のNo.1〜No.8は本発明のガラス組成の
例、No.11〜No.15は比較例である。うちNo.11〜No.13
は本発明のガラス組成範囲から外れた場合を示
し、No.14は特開昭58−41736号にもとづくガラス
組成の例であり、No.15は特開昭49−39607号にも
とづくガラス組成の例である。 ガラスの調製において、ガラス原料はSiO2
として光学珪砂を、Al2O3源として水酸化アルミ
ニウムを、B2O3源としてホウ酸を、MgO源とし
て炭酸マグネシウムを、ZnO源として亜鉛華を、
BaO源として硝酸バリウムを、Na2O源として硝
酸ソーダを用い、また、いずれも清澄促進剤とし
て亜砒酸を全重量に対して0.3%添加した。 これら原料を目標組成にしたがつて秤量し、充
分撹拌混合したうえ白金ルツボに投入し、間接加
熱電気炉で1550℃、4.5時間保持し、次いで炉内
放冷してガラスサンプルを得た。 得られたガラスの一部を棒状に加工し押棒式線
膨張計で膨張係数(25゜〜300℃)および膨張屈曲
点からの転移点を求め第1表に示した。 またガラスの一部を角片状に加工し、電気炉内
で1100℃、1150℃で各3時間保持して後急冷し、
それぞれの固、液状態を鏡下観察して液相温度範
囲を求めた。第1表中液相温度が1100℃以下を
A、1100〜1150℃をB、1150℃を超えるものをC
で表示した。 さらに、2mm厚で両面を平滑研摩した板状ガラ
スサンプルを作成し分光光度計により分光透過率
を測定し紫外域の透過の下限を求め第1表に示し
た。 同じく上記板状ガラスについて、ガラス表面の
約1/2をロウでマスキングしたうえで、一つは100
℃3N HClに2時間浸漬して後水洗し、マスキン
グを剥離してマスキング部(非浸漬部)に対する
侵食部の曇り状態を目視および鏡下で観察した。
他は100℃2N NaOHに2時間浸漬したものにつ
いて上記と同様な手法により観察した。 なお第1表中非浸漬部と差異が認められない場
合をA、若干曇りが認められる場合をB、曇りが
明白なものをCのランクで表示した。 第1表中本発明に係るNo.1〜No.8のガラスはい
ずれの測定結果も均衡したよい値が得られてい
る。比較例No.11は熱膨張係数において劣り、No.12
は紫外域の透過の下限が高く、またNo.13は分相に
より若干の乳濁現象がみられる。 さらにNo.15は熱膨張係数、耐アルカリ性、耐熱
性において劣り、No.14は熱膨張係数において劣
り、紫外域の透過の下限が高い。 (発明の効果) 以上のように本発明のガラスはフオトエツチン
グマスク用として低膨張であるので基板に集積度
の高いパターンを施すことができ、化学的耐久性
に優れるので酸、アルカリによるエツチングや洗
浄に充分耐え、フオトレジストの焼付に好適な紫
外線をよく透過し、かつ通常のガラス溶融温度で
充分溶融し得るとともに充分な耐熱性を有すると
いう卓越した効果を奏するものである。 勿論フオトエツチングマスク用に限らず、たと
えば自動車のヘツドライト用シールドビーム、水
銀灯のバルブ、ジヤーやコーヒーポツト等の耐熱
食器、ビーカーやフラスコ等理化学品、電子レン
ジ内装品等広い分野にわたり利用しうるという利
点を有するものである。 【表】
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a low expansion glass composition, and more particularly to a low expansion glass composition suitable for use in photoetching masks. Glass masks used in the photoetching method are usually made by applying a film of metallic chromium to a glass plate by vapor deposition or sputtering, then applying a photoresist, and then exposing and baking a projected image from a reticle (intermediate master) onto the coated surface. Then, the photoresist is peeled off by etching or washing with an acid or alkali, and unnecessary portions of the chromium film are removed to form a pattern. This glass mask is used, for example, in the production of integrated circuits.The glass mask with the chromium pattern formed thereon is applied to a silicon substrate coated with photoresist in advance, exposed to light, baked, etched,
By performing cleaning and the like, a substrate with an integrated circuit pattern can be obtained. The preferred conditions for the glass for photo-etching masks are that it can sufficiently withstand the heat generated by the light during the exposure process, that it does not expand or contract, so that a sharp pattern can be drawn on the substrate, and that it is effective for printing photoresists. It can transmit light of short wavelengths and ultraviolet range well, and it can withstand acids and alkalis used in etching and cleaning processes, but it also has to be homogenized enough to transmit light uniformly. It is also important that there are no bubbles, undissolved substances, foreign substances, striae, etc., and that the surface is extremely smooth. (Prior Art) A well-known glass for photo-etching masks is SiO 2 -B 2 O 3 -Na 2 O-based Pyrex glass (for example, Ceramic Notebook, page 604, published January 15, 1971). However, 80% of SiO 2 is added in the composition.
% or more, it is difficult to melt at normal glass melting temperatures of 1,500 to 1,550°C, and its high viscosity makes it difficult to break bubbles and make it difficult to obtain a homogeneous glass. In addition, as a known low expansion glass, SiO 2 71.0
~75.5wt%, Al2O3 2.2 ~3.2wt%, B2O3 16.0 ~
21.0wt%, CaO0~0.6wt%, MgO0~0.6wt%,
BaO0~2wt%, ZnO0~1wt%, Li2O0.4 ~2.2wt
%, Na2O0.8 ~3.3wt%, K2O0 ~3.0wt%, Li2O
+Na 2 O + K 2 O 3.3 to 6.0wt% component accounts for 98wt of the total
% or more glass (Japanese Unexamined Patent Publication No. 49-39607),
SiO2 55~70mol%, Al2O3 7 ~13mol%, CaO7~
20mol%, MgO3~13mol%, ZnO3~13mol%,
K2O or Na2O0.5-3mol %, PbO0-11mol%,
A photoetching mask glass (Japanese Unexamined Patent Publication No. 41736/1983) containing 0 to 3 mol % of ZrO 2 is known. However, the former glass has less Al2O3 , while
Due to the excessive amount of B 2 O 3 , the heat resistance, chemical durability, and alkali resistance are not sufficient, and in addition, it tends to phase separate and become emulsified, so it is not satisfactory for use in photoresist masks. In addition, since the latter glass contains CaO, it inevitably has a high expansion coefficient, making it difficult to obtain a highly accurate pattern.
In addition, when PbO is not contained, the liquidus temperature is high and the melting property is poor.On the other hand, as the PbO content increases, the ultraviolet transmittance deteriorates significantly, and ZrO 2
If it does not contain ZrO 2 , it has poor chemical durability and
There was a problem in that as the content of . (Problems to be solved by the invention) Glass of conventional composition has poor heat resistance, chemical durability,
Although it is not fully satisfactory for use in photoresist masks due to problems with meltability, ultraviolet transmittance, expansion coefficient, etc., the present invention provides a glass composition that satisfies these conditions. . (Means for Solving the Problems) The low expansion glass suitable for the photoetching mask according to the present invention has a weight percentage of
SiO2 55-68 %, Al2O3 15-24%, B2O3 2-8 %,
MgO3~10%, ZnO3~10%, BaO0~3%,
Na 2 O 0 to 2%, and the molar ratio (Al 2 O 3 +
B2O3 )/(MgO+ZnO+ BaO + Na2O ) is 0.9~
It is characterized by a range of 1.1. The present invention is first based on a composition range with a relatively low liquidus temperature due to the eutectic of SiO 2 -Al 2 O 3 -RO (divalent metal oxide), and furthermore, a suitable amount of B 2 O 3 is added. By including it, the liquidus temperature is further lowered, so that it can be sufficiently melted even at normal glass melting temperatures. Note that B 2 O 3 , SiO 2 , and Al 2 O 3 are well known as component factors that give low expansion, and MgO and ZnO are also known as divalent metal oxides that give low expansion. However, CaO and PbO are unsuitable for obtaining low expansion because they act negatively and should be avoided. In terms of chemical durability (acid resistance, alkali resistance), Al 2 O 3 is generally excellent, followed by SiO 2 . Next to these, ZnO is excellent among divalent metal oxides, but CaO, PbO, etc. are inferior and are not preferred. Although ZrO 2 has excellent chemical durability, it is not suitable because it increases the liquidus temperature and makes meltability extremely difficult. Regarding the composition of each individual component in the present invention, if SiO 2 exceeds 68wt% (hereinafter wt% is simply referred to as %), the viscosity increases and the clarity deteriorates, and if it is less than 55%, the heat The coefficient of expansion increases,
The crystallization rate of devitrification increases. When Al 2 O 3 exceeds 24%, the viscosity increases and Al 2 O 3 -based striae are particularly likely to occur, but when it is less than 15%, chemical durability deteriorates.
Among divalent metal oxides, MgO is effective in reducing the coefficient of thermal expansion, but when it exceeds 10%, it significantly deteriorates chemical durability, especially acid resistance, and when it is less than 3%, it also deteriorates clarity. . ZnO also has a relatively low coefficient of thermal expansion, is effective in reducing viscosity, and has excellent chemical durability, so it
Although it compensates for the drawbacks of MgO, if it is less than 3%, these effects will be small, and if it exceeds 10%, it will increase the rate of crystallization of devitrification and deteriorate workability, which is not preferable. B 2 O 3 acts as a solvent and reduces the coefficient of thermal expansion, but if it exceeds 8%, it deteriorates heat resistance and chemical durability, and if it is less than 3%, its action as a solvent is insufficient. Furthermore, if 0 to 2% of Na 2 O and/or 0 to 3% of BaO are introduced in the form of nitrate or sulfate as optional components, good results can be obtained in terms of foam removal and homogeneity. In addition, when Na 2 O and BaO are used together, it is sufficient to keep the former at 1% or less and the latter at 1.5% or less. In addition, if AS 2 O 3 is added in an amount of 0.5% or less based on the total weight, the foam breaking effect can be obtained in an extremely short time. However, since the liquidus temperature of glass in this composition range is 1150°C or lower, it can be sufficiently melted at the normal glass melting temperature of 1500 to 1550°C, and the coefficient of thermal expansion (25 to 300°C) is 25 to 35 Because it is extremely low at 10 -7 cm/cm, °C, it is possible to create sharp patterns with a high degree of integration on substrates in the production of integrated circuits, for example, and because it is highly chemically durable, it can withstand etching with acids, alkalis, etc. It withstands washing well, has a transition temperature of around 700℃, and has excellent heat resistance. Furthermore, when exposing a substrate, ultraviolet rays are often used as light beams in a short wavelength range suitable for printing photoresists. However, B 2 O 3 in glass,
Al 2 O 3 has a slight tendency to form non-bridging oxygen compared to SiO 2 , and as is well known, non-bridging oxygen has the property of absorbing ultraviolet rays, so it is not preferable. It is presumed that by introducing oxides of alkali metals and divalent metals into 2 O 3 in a balanced manner, it becomes difficult to form non-bridging oxygen, and as a result, absorption of ultraviolet rays can be reduced. That is, (B 2 O 3 + Al 2 O 3 )/(MgO + ZnO +
If the molar ratio of BaO + Na 2 O) is 0.9 to 1.1, then 2 mm
The lower limit of ultraviolet transmission in thick glass is 220 to 250
For example, in Japanese Patent Application Laid-Open No. 58-41736,
It is clear that ultraviolet rays can easily pass through around 280 to 300 mm. In addition, when the Al 2 O 3 /B 2 O 3 molar ratio is close to 1 in this composition range, the obtained glass is likely to undergo phase separation,
It has therefore been experimentally shown that there is a tendency for emulsification. To prevent phase separation, Al 2 O 3 /
It is preferable that the B 2 O 3 molar ratio is 1.4 or more. On the other hand, if the Al 2 O 3 /B 2 O 3 molar ratio exceeds 8, the liquidus temperature will become high, which will have a negative effect on meltability. Also, Al 2 O 3 /
If the B 2 O 3 molar ratio is less than 1.4, especially less than 1, chemical durability etc. will be adversely affected. (Examples) The present invention will be described in detail below based on Examples. No. 1 to No. 8 in Table 1 are examples of glass compositions of the present invention, and No. 11 to No. 15 are comparative examples. Of which No.11~No.13
indicates a case outside the glass composition range of the present invention, No. 14 is an example of a glass composition based on JP-A-58-41736, and No. 15 is an example of a glass composition based on JP-A-49-39607. This is an example. In the preparation of glass, the glass raw materials are optical silica sand as a SiO2 source, aluminum hydroxide as an Al2O3 source, boric acid as a B2O3 source , magnesium carbonate as an MgO source, and zinc white as a ZnO source . ,
Barium nitrate was used as a BaO source, sodium nitrate was used as a Na 2 O source, and in both cases, arsenous acid was added at 0.3% based on the total weight as a clarifying promoter. These raw materials were weighed according to the target composition, thoroughly stirred and mixed, then put into a platinum crucible, held at 1550°C for 4.5 hours in an indirect heating electric furnace, and then allowed to cool in the furnace to obtain a glass sample. A part of the obtained glass was processed into a rod shape, and the expansion coefficient (25° to 300°C) and transition point from the expansion bending point were determined using a push-rod linear dilatometer, and the results are shown in Table 1. In addition, a part of the glass was processed into a square piece, held in an electric furnace at 1100℃ and 1150℃ for 3 hours each, and then rapidly cooled.
The solid and liquid states of each were observed under a microscope to determine the liquidus temperature range. In Table 1, A indicates that the liquidus temperature is 1100℃ or less, B indicates 1100 to 1150℃, and C indicates that the liquidus temperature exceeds 1150℃.
It was displayed in Furthermore, a plate glass sample having a thickness of 2 mm with both sides polished smooth was prepared, and its spectral transmittance was measured using a spectrophotometer, and the lower limit of transmittance in the ultraviolet region was determined and shown in Table 1. Similarly, regarding the above plate glass, after masking about 1/2 of the glass surface with wax, one is coated with 100%
℃3N HCl for 2 hours, and then washed with water. The masking was peeled off and the cloudy state of the eroded area relative to the masked area (non-immersed area) was observed visually and under a mirror.
The other samples were immersed in 2N NaOH at 100°C for 2 hours and observed using the same method as above. In Table 1, cases where no difference from the non-immersed area was observed were ranked as A, cases where some cloudiness was observed were ranked as B, and cases where cloudiness was evident were ranked as C. In Table 1, the glasses No. 1 to No. 8 according to the present invention had well-balanced good values in all measurement results. Comparative example No. 11 is inferior in thermal expansion coefficient, and No. 12 is inferior in thermal expansion coefficient.
No. 13 has a high lower limit of transmission in the ultraviolet region, and No. 13 has a slight emulsion phenomenon due to phase separation. Further, No. 15 is inferior in thermal expansion coefficient, alkali resistance, and heat resistance, and No. 14 is inferior in thermal expansion coefficient, and has a high lower limit of transmission in the ultraviolet region. (Effects of the Invention) As described above, the glass of the present invention has low expansion for use in photo-etching masks, so it is possible to form highly integrated patterns on substrates, and it has excellent chemical durability, so it cannot be etched with acids or alkalis. It exhibits the outstanding effects of being sufficiently resistant to cleaning, well transmitting ultraviolet rays suitable for baking photoresists, sufficiently melting at ordinary glass melting temperatures, and having sufficient heat resistance. Of course, it has the advantage that it can be used not only for photo-etching masks, but also for a wide range of fields, such as sealed beams for automobile headlights, bulbs for mercury lamps, heat-resistant tableware such as jars and coffee pots, physical and chemical products such as beakers and flasks, and interior parts of microwave ovens. It has the following. 【table】

Claims (1)

【特許請求の範囲】 1 重量パーセントで、SiO255〜68%、Al2O315
〜24%、B2O32〜8%、MgO3〜10%、ZnO3〜
10%、BaO0〜3%、Na2O0〜2%であり、かつ
モル比で(Al2O3+B2O3)/(MgO+ZnO+
BaO+Na2O)が0.9〜1.1の範囲であることを特
徴とする低膨張ガラス。 2 モル比でAl2O3/B2O3が1.4〜8の範囲であ
ることを特徴とする特許請求の範囲第1項に記載
の低膨張ガラス。
[Claims] 1. In weight percent, SiO 2 55-68%, Al 2 O 3 15
~24%, B2O3 2 ~8%, MgO3~10%, ZnO3~
10%, BaO0~3%, Na2O0 ~ 2%, and the molar ratio is ( Al2O3 + B2O3 ) /(MgO+ZnO+
A low expansion glass characterized in that BaO + Na 2 O) is in the range of 0.9 to 1.1. 2. The low expansion glass according to claim 1 , wherein the Al2O3 / B2O3 molar ratio is in the range of 1.4 to 8.
JP59172435A 1984-08-21 1984-08-21 Low expansion glass Granted JPS6153130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59172435A JPS6153130A (en) 1984-08-21 1984-08-21 Low expansion glass

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172435A JPS6153130A (en) 1984-08-21 1984-08-21 Low expansion glass

Publications (2)

Publication Number Publication Date
JPS6153130A JPS6153130A (en) 1986-03-17
JPH0146460B2 true JPH0146460B2 (en) 1989-10-09

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Country Link
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE465763B (en) * 1990-03-09 1991-10-28 Rubore Materials Sweden Ab MANUFACTURED TO MAKE A MATERIAL COURSE FOR MANUFACTURING PACKAGING
JP2531858B2 (en) * 1991-01-31 1996-09-04 ホーヤ株式会社 X-ray mask material
JP2001172042A (en) * 1999-10-08 2001-06-26 Ohara Inc Transparent glass and method of producing the same
US8341976B2 (en) * 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
JPWO2016088778A1 (en) * 2014-12-02 2017-09-14 旭硝子株式会社 Glass plate and heater using the same
CN110818250B (en) * 2019-12-24 2022-02-01 成都光明光电股份有限公司 Optical glass

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