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JPH0158492B2 - - Google Patents
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JPH0158492B2 - - Google Patents

Info

Publication number
JPH0158492B2
JPH0158492B2 JP17308680A JP17308680A JPH0158492B2 JP H0158492 B2 JPH0158492 B2 JP H0158492B2 JP 17308680 A JP17308680 A JP 17308680A JP 17308680 A JP17308680 A JP 17308680A JP H0158492 B2 JPH0158492 B2 JP H0158492B2
Authority
JP
Japan
Prior art keywords
waveguide
electrode
optical
light
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17308680A
Other languages
Japanese (ja)
Other versions
JPS5797517A (en
Inventor
Tetsuo Horimatsu
Itsupei Sawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17308680A priority Critical patent/JPS5797517A/en
Publication of JPS5797517A publication Critical patent/JPS5797517A/en
Publication of JPH0158492B2 publication Critical patent/JPH0158492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31Digital deflection, i.e. optical switching
    • G02F1/313Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3137Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は光通信システム等で用いる電気光学効
果を利用した光の伝送路を切換るための光スイツ
チに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical switch for switching a light transmission path using an electro-optic effect used in an optical communication system or the like.

従来の光スイツチは複数本の光フアイバを対向
させ対向する光フアイバ同士を機械的に移動させ
て伝送路として使用する光フアイバの切換を行な
つていた。このような光スイツチは駆動力を得る
ために比較的高電圧大電流を必要とし消費力が大
きくなる。また、通信装置等においては特に、光
スイツチの切換が不確実であると伝送すべき光路
以外の光路に光が洩れいわゆるクロストークの問
題が生ずる。
Conventional optical switches switch optical fibers used as transmission lines by placing a plurality of optical fibers facing each other and mechanically moving the opposing optical fibers to each other. Such an optical switch requires relatively high voltage and large current to obtain driving force, resulting in large power consumption. Furthermore, especially in communication devices and the like, if the switching of an optical switch is uncertain, light leaks into an optical path other than the optical path to be transmitted, resulting in a so-called crosstalk problem.

本発明は上記の点に鑑みなされたものであつ
て、電気光学効果を利用するために低電圧、低消
費電力で確実にクロストークを防止した光路切換
ができる光スイツチの提供を目的とする。このた
め本発明においては、光学結晶体あるいは半導体
からなる基板上に帯状に金属を拡散して2本の導
波路を交叉させ一方から他方に向う入口導波路お
よび出口導波路を形成し、上記基板表面の導波路
交叉部上あるいはその周囲に導波路切換用電極を
設け、さらに上記入口導波路の延長上少くとも1
つの出口導波路上にクロストーク防止用電極を設
けている。
The present invention has been made in view of the above points, and an object of the present invention is to provide an optical switch capable of switching optical paths while reliably preventing crosstalk at low voltage and low power consumption in order to utilize the electro-optic effect. Therefore, in the present invention, metal is diffused in a strip shape onto a substrate made of an optical crystal or a semiconductor, and two waveguides are crossed to form an entrance waveguide and an exit waveguide directed from one side to the other. A waveguide switching electrode is provided on or around the waveguide intersection on the surface, and at least one electrode is provided on the extension of the entrance waveguide.
Crosstalk prevention electrodes are provided on each exit waveguide.

図面は本発明に係る光スイツチの一実施例の斜
視図である。強誘電体である光学結晶体(例えば
LiNbO3、LiTaO3等)あるいは半導体からなる
厚さ1mm程度の基板5上にチタン(Ti)等の金
属を帯状に蒸着しこれを例えば1000℃、5時間の
熱処理により拡散させて2本の交叉するたとえば
幅10μm、厚さ4μmの導波路1,4および2,3
を形成する。このようにチタンを拡散させて形成
した部分は基板材質よりもその屈折率が大きくな
り光はこの導波路内をその内壁面で全反射を繰返
しながら進行する。導波路の交叉部9の中央部に
切換電極6を設けこれに隣接してアース電極7を
設ける。この例においては光の入口導波路を1と
し、出口導波路を3又は4とし、2は予備用導波
路として使用するものとする。この場合、出口側
導波路4上にクロストーク防止用電極8を設け
る。
The drawing is a perspective view of an embodiment of an optical switch according to the present invention. Optical crystals that are ferroelectric (e.g.
A metal such as titanium (Ti) is vapor-deposited in a band shape on a substrate 5 made of a semiconductor (LiNbO 3 , LiTaO 3 , etc.) or a semiconductor with a thickness of about 1 mm, and then diffused by heat treatment at 1000°C for 5 hours to form two intersecting layers. For example, waveguides 1, 4 and 2, 3 with a width of 10 μm and a thickness of 4 μm
form. The refractive index of the portion formed by diffusing titanium in this way is larger than that of the substrate material, and light travels within this waveguide while being repeatedly totally reflected on its inner wall surface. A switching electrode 6 is provided at the center of the crossing portion 9 of the waveguide, and a grounding electrode 7 is provided adjacent to this. In this example, the optical entrance waveguide is 1, the exit waveguide is 3 or 4, and 2 is used as a backup waveguide. In this case, a crosstalk prevention electrode 8 is provided on the exit side waveguide 4.

以上のような構成の光スイツチにおいて、切換
電極6およびクロストーク防止用電極8に同電位
の電圧を印加すればこれらの電極下部の屈折率が
変化し光はここで反射される。従つて、導波路1
から入射した光は切換電極6に印加される直流あ
るいは直流電圧によつておこる導波路内の屈折率
変化により、電極6下部で反射されて導波路3に
進路を切換えられる。この場合の電極6は交叉部
中央にあり、その大きさはたとえば600μm×10μ
mの帯状である。このとき、切換電極6の下部で
反射されずに洩れた光は直進して導波路4へ行進
するがこの光はクロストーク防止用電極8下部で
反射されるため導波路4に進入する光はほぼ完全
になくなる。従つて、導波路1から直進して導波
路4に進行するを光を切換電極6により反射させ
て進路を変更させ導波路3に切換えた場合、他の
一方の出口側導波路4内に洩れる光はなくなり、
従つてクロストーク現象が防止される。なお、ア
ース電極7は基板5の下面全面あるいはその他の
適当な場所に設けてもよい、導波路2からの光も
1の場合と同様の構成により同様な作用を行なわ
せることができる。
In the optical switch configured as described above, if a voltage of the same potential is applied to the switching electrode 6 and the crosstalk prevention electrode 8, the refractive index of the lower part of these electrodes changes and light is reflected there. Therefore, waveguide 1
The light incident on the switching electrode 6 is reflected at the lower part of the electrode 6 and switched to the waveguide 3 due to a change in the refractive index within the waveguide caused by the DC or DC voltage applied to the switching electrode 6. In this case, the electrode 6 is located at the center of the intersection, and its size is, for example, 600 μm x 10 μm.
It is strip-shaped. At this time, the light that leaks without being reflected at the lower part of the switching electrode 6 travels straight to the waveguide 4, but since this light is reflected at the lower part of the crosstalk prevention electrode 8, the light that enters the waveguide 4 is Almost completely gone. Therefore, when the light traveling straight from the waveguide 1 to the waveguide 4 is reflected by the switching electrode 6 to change its course and is switched to the waveguide 3, the light will leak into the other exit side waveguide 4. The light is gone;
Crosstalk phenomena are thus prevented. Incidentally, the ground electrode 7 may be provided on the entire lower surface of the substrate 5 or at any other suitable location.The light from the waveguide 2 can also have the same effect as in the case 1 with the same structure.

以上のような構成の光スイツチにおいては、機
械的な駆動部がなく、構造が簡単で電極間に殆ん
ど電流が流れないために電力消費が少く、電気的
スイツチのオンオフ動作により電圧を印加又は停
止させぬことにより確実に光路の切換ができしか
もクロストークの発生は完全に防止される。
The optical switch with the above configuration has no mechanical drive part, has a simple structure, and almost no current flows between the electrodes, resulting in low power consumption, and the voltage is applied by the on/off operation of an electrical switch. Alternatively, by not stopping the optical path, the optical path can be switched reliably, and the occurrence of crosstalk can be completely prevented.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明に係る光スイツチの一実施例の斜
視図である。 1,2,3,4……導波路、5……基板、6…
…切換電極、7……アース電極、8……クロスト
ーク防止用電極。
The drawing is a perspective view of an embodiment of an optical switch according to the present invention. 1, 2, 3, 4... Waveguide, 5... Substrate, 6...
...Switching electrode, 7...Earth electrode, 8...Crosstalk prevention electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 光学結晶体あるいは半導体からなる基板上に
帯状に金属を拡散して2本の導波路を交叉させ一
方から他方に向かう入口導波路および出口導波路
を形成し、上記基板上表面の導波路交叉部上ある
いはその周囲に導波路切換用電極を設け、さらに
上記入口導波路の延長上少くとも1つの出口導波
路上にクロストーク防止用電極を設けた光スイツ
チ。
1 Diffuse metal in a band shape on a substrate made of an optical crystal or a semiconductor to cross two waveguides to form an entrance waveguide and an exit waveguide going from one to the other, and cross the waveguides on the upper surface of the substrate. An optical switch comprising a waveguide switching electrode provided on or around the part, and further a crosstalk prevention electrode provided on at least one exit waveguide as an extension of the entrance waveguide.
JP17308680A 1980-12-10 1980-12-10 Optical switch Granted JPS5797517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17308680A JPS5797517A (en) 1980-12-10 1980-12-10 Optical switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17308680A JPS5797517A (en) 1980-12-10 1980-12-10 Optical switch

Publications (2)

Publication Number Publication Date
JPS5797517A JPS5797517A (en) 1982-06-17
JPH0158492B2 true JPH0158492B2 (en) 1989-12-12

Family

ID=15953937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17308680A Granted JPS5797517A (en) 1980-12-10 1980-12-10 Optical switch

Country Status (1)

Country Link
JP (1) JPS5797517A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0345870U (en) * 1989-09-12 1991-04-26

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137851B1 (en) * 1983-02-10 1990-05-16 Matsushita Electric Industrial Co., Ltd. Optical switch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0345870U (en) * 1989-09-12 1991-04-26

Also Published As

Publication number Publication date
JPS5797517A (en) 1982-06-17

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