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JPH0161228B2 - - Google Patents
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JPH0161228B2 - - Google Patents

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Publication number
JPH0161228B2
JPH0161228B2 JP58094906A JP9490683A JPH0161228B2 JP H0161228 B2 JPH0161228 B2 JP H0161228B2 JP 58094906 A JP58094906 A JP 58094906A JP 9490683 A JP9490683 A JP 9490683A JP H0161228 B2 JPH0161228 B2 JP H0161228B2
Authority
JP
Japan
Prior art keywords
electron beam
focusing lens
stage
lens
objective lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58094906A
Other languages
Japanese (ja)
Other versions
JPS59221952A (en
Inventor
Takashi Yanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akashi Seisakusho KK
Original Assignee
Akashi Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akashi Seisakusho KK filed Critical Akashi Seisakusho KK
Priority to JP58094906A priority Critical patent/JPS59221952A/en
Publication of JPS59221952A publication Critical patent/JPS59221952A/en
Publication of JPH0161228B2 publication Critical patent/JPH0161228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/21Means for adjusting the focus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Description

【発明の詳細な説明】 本発明は電子線装置における電子線の照射方
法、特に対物レンズの励磁強度を一定に保つたま
まで試料に入射する照射電子線の集束角度を連続
的に可変出来るようにした電子線の照射方法に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam irradiation method in an electron beam apparatus, and in particular to a method in which the focusing angle of the irradiated electron beam incident on a sample can be continuously varied while keeping the excitation intensity of an objective lens constant. The present invention relates to an electron beam irradiation method.

近年、新材料の開発研究等において、当該材料
の組成を観察するのに集束電子線回折法という手
法が採用されている。このような観察法では試料
に入射する電子線束の集束角を種々変化させて回
折像を得、試料の内部構造を調べようとするもの
であるが、上記のように集束角を制御しながら試
料に照射し、当該試料を観察する方法は結晶の高
分解能像を得る場合にも有用である。
In recent years, in research and development of new materials, a method called focused electron diffraction has been adopted to observe the composition of the materials. In this type of observation method, the diffraction image is obtained by varying the convergence angle of the electron beam incident on the sample, and the internal structure of the sample is investigated. The method of irradiating and observing the sample is also useful for obtaining high-resolution images of crystals.

かかる電子線の照射方法を使用するための照射
系の従来例を第1図に示す。この照射系は、前方
対物レンズ体2及び後方対物レンズ体3から構成
された対物レンズ1の前方に一又は複数個の集束
レンズ4,5を配置し、これらの集束レンズ4,
5を通つた照射電子線6を、前方対物レンズ体2
と後方対物レンズ体3との間即ち対物レンズ1ギ
ヤツプ内に設置された試料7上へ集束させるよう
に構成されて成る。更に最終段集束レンズ5の近
傍には絞り8が配設され、対物レンズ1の励磁強
度を一定に保つた状態で試料7に入射する照射電
子線6の集束角を可変するようになつている。即
ち、第1図に示す電子線照射系では、電子線源の
実像を集束レンズ4によつて先ず電子線軸(以
下、便宜上光軸という)O上の点Pに結像し、次
いで最終段集束レンズ5によつて点Pと共役な点
Qに結像した後、前方対物レンズ2によつて試料
7上の点Rに所定の集束角でもつて結像するよう
になつている。試料7に入射する照射電子線6の
集束角を可変する場合には、絞り8の孔径を第1
図中実線で示す大きさから、他の大きさへと変化
させることによつて行なう。この様な集束角の可
変を行なうために、絞り8には通常3〜4個の孔
列を設けた可動絞りが用いられ、その時々必要に
応じて光軸Oに合わせた孔を入れ換えることがで
きるようになつている。
A conventional example of an irradiation system for using such an electron beam irradiation method is shown in FIG. This irradiation system includes one or more focusing lenses 4 and 5 arranged in front of an objective lens 1 consisting of a front objective lens body 2 and a rear objective lens body 3.
The irradiated electron beam 6 passing through the front objective lens body 2
and the rear objective lens body 3, ie, within the gap of the objective lens 1, the beam is focused onto a sample 7. Further, a diaphragm 8 is disposed near the final stage focusing lens 5, and is configured to vary the focusing angle of the irradiation electron beam 6 incident on the sample 7 while keeping the excitation intensity of the objective lens 1 constant. . That is, in the electron beam irradiation system shown in FIG. 1, a real image of the electron beam source is first focused on a point P on the electron beam axis (hereinafter referred to as the optical axis for convenience) O by the focusing lens 4, and then the final stage focusing After the lens 5 forms an image at a point Q that is conjugate with the point P, the front objective lens 2 forms an image at a point R on the sample 7 at a predetermined convergence angle. When varying the convergence angle of the irradiated electron beam 6 incident on the sample 7, the aperture diameter of the aperture 8 is adjusted to the first
This is done by changing the size shown by the solid line in the figure to other sizes. In order to vary the focusing angle in this way, a movable diaphragm with three to four rows of holes is usually used for the diaphragm 8, and the holes aligned with the optical axis O can be replaced from time to time as necessary. I'm starting to be able to do it.

しかしながら、このような従来の電子線の照射
方法にあつては、試料7に入射する電子線6の集
束角を可変するために数個の孔列を設けた可動タ
イプの絞り8を操作して行なつていたため、上記
電子線6の集束角は段階的に変化せざるを得ず連
続的な角度変化を起させることは出来なかつた。
しかも集束角の可変段数は絞り8の形成した孔の
数で決り、せいぜい4段までの角度可変しか行な
うことが出来なかつた。
However, in such a conventional electron beam irradiation method, a movable aperture 8 provided with several rows of holes is operated to vary the convergence angle of the electron beam 6 incident on the sample 7. Because of this, the convergence angle of the electron beam 6 had to be changed stepwise, and it was not possible to cause a continuous angle change.
Moreover, the number of stages in which the focusing angle can be varied is determined by the number of holes formed by the aperture 8, and the angle can only be varied up to four stages at most.

もちろん、絞り8の穴径切換えをせずに最終段
の集束レンズ5の励磁強度を変化させても集束角
を変化させることが出来るが、この場合には、第
2図に拡大して示すように、試料7上に出来る電
子線照射円の中の外縁部から中心点にかけての間
で、試料7へ入射する電子線6の入射角度が異な
り、例えば結晶の回折像を得ようとしても正しい
回折像が得られないという不具合があつた。
Of course, the focusing angle can also be changed by changing the excitation intensity of the final stage focusing lens 5 without changing the hole diameter of the aperture 8, but in this case, as shown enlarged in Fig. 2, the focusing angle can be changed. In addition, the angle of incidence of the electron beam 6 entering the sample 7 is different between the outer edge and the center point of the electron beam irradiation circle formed on the sample 7, and for example, even if you try to obtain a diffraction image of a crystal, the correct diffraction may not be obtained. There was a problem with not being able to get an image.

本発明は、このような従来の問題点に鑑みなさ
れたもので、その目的は、対物レンズの励磁強度
を一定に保つた状態で試料に入射する照射電子線
の集束角度を連続的に可変することのできる電子
線の照射方法を提供し、上記従来の問題点を解決
することである。
The present invention was developed in view of these conventional problems, and its purpose is to continuously vary the convergence angle of the irradiated electron beam incident on the sample while keeping the excitation intensity of the objective lens constant. The object of the present invention is to provide an electron beam irradiation method that can be used to irradiate electron beams, and to solve the above-mentioned conventional problems.

本発明は、上記目的を達成するため、対物レン
ズの前方に電子線源側から第1段、第2段及び最
終段の順に少なくとも3段の集束レンズを配置
し、第1段集束レンズの励磁を一定に保つ一方、
第2段集束レンズと最終段集束レンズとの励磁を
互いに連動させ、最終段集束レンズの像点を対物
レンズの物点にほぼ一致するようにしたことを要
旨とするものである。第1段集束レンズと最終段
集束レンズとを互いに連動して励磁変化させるこ
とにより、第2段集束レンズの像点は励磁変化に
伴つて電子線軸の前後方向に移動するが最終段集
束レンズの像点は一定点に停止した状態に保つこ
とが出来る。上記第2段集束レンズの像点移動
は、当該第2段集束レンズを通つた後の電子線の
集束角度が可変されることを意味し、また上記最
終段集束レンズの像点の固定は、上記電子線の集
束角度の可変に対して対物レンズの励磁を一定に
保ち得ることを意味する。そして又、本発明の他
の態様では、最終段集束レンズと対物レンズとの
間に追加の電子レンズを配設し、最終段集束レン
ズによる電子線源の実像を追加電子レンズと前方
対物レンズ体とにより試料上に結像させるように
している。そして、上記追加電子レンズと前方対
物レンズとの合成縮小率を比較的小さくしておく
ことにより、試料の凹凸による最終段集束レンズ
の像点の変動範囲を小さく抑えることができる。
In order to achieve the above object, the present invention arranges at least three stages of focusing lenses in the order of the first stage, second stage, and final stage from the electron beam source side in front of the objective lens, and excite the first stage focusing lens. While keeping constant,
The gist is that the excitation of the second-stage focusing lens and the final-stage focusing lens are linked to each other, so that the image point of the final-stage focusing lens almost coincides with the object point of the objective lens. By changing the excitation of the first-stage focusing lens and the final-stage focusing lens in conjunction with each other, the image point of the second-stage focusing lens moves in the front-rear direction of the electron beam axis as the excitation changes, but the image point of the second-stage focusing lens moves in the front-back direction of the electron beam axis as the excitation changes. The image point can be kept stationary at a fixed point. The movement of the image point of the second-stage focusing lens means that the focusing angle of the electron beam after passing through the second-stage focusing lens is varied, and the fixation of the image point of the final-stage focusing lens means that This means that the excitation of the objective lens can be kept constant while the focusing angle of the electron beam is varied. In another aspect of the present invention, an additional electron lens is disposed between the final stage focusing lens and the objective lens, and the real image of the electron beam source by the final stage focusing lens is transferred between the additional electron lens and the front objective lens. The image is formed on the sample by By keeping the combined reduction ratio of the additional electron lens and the front objective lens relatively small, it is possible to suppress the fluctuation range of the image point of the final stage focusing lens due to the unevenness of the sample to a small value.

以下本発明を添付図面に示す実施例に基づいて
詳削に説明する。
The present invention will be explained in detail below based on embodiments shown in the accompanying drawings.

第3図は、第1の発明を実施するための電子線
照射系の一実施例を示す図である。この照射系
は、対物レンズ1の前方位置に電子線源側から順
に第1段集束レンズ10、第2段集束レンズ11
及び最終段集束レンズ5となるように少なくとも
3段の集束レンズを配置し、第2段集束レンズ1
1近傍には所定の開口径を有する電子線束の断面
規制用の絞り13を取付けている。第1段集束レ
ンズ10は、電子線源の実像を、第3図中光軸O
上の点Sに結像するように励磁設定されている。
第2段集束レンズ11は、点Sの実像を当該第2
段集束レンズ11の後方の光軸O上の点P1から
点Pnまでの任意の位置に結像し得る様励磁可能
となつている。第3段集束レンズ5は、第2段集
束レンズ11の励磁変化によつて軌道変更された
電子線6を光軸O上の定点Qに集束させ、この位
置に電子線源の実像を結像させるべく、上記第2
段集束レンズ11と連動して励磁変化出来るよう
になつている。対物レンズ1は前方対物レンズ体
2と後方対物レンズ体3とから成り、両対物レン
ズ体2,3の間には試料7が配設されている。前
方対物レンズ2には短焦点レンズが用いられるの
が好ましく、このレンズは、定点Qを物点とし、
ここから出た電子線6を試料7上の点Rに集束さ
せ、この位置に電子線源の実像を結像させるべく
励磁設定されている。第2段集束レンズ11の近
傍に設けられた絞り13には固定絞りが用いられ
てもよいし、可動絞りが設けられてもよい。なお
第1段集束レンズ10の前方位置に更に幾つかの
集束レンズが配置されていてもよい。
FIG. 3 is a diagram showing an embodiment of an electron beam irradiation system for carrying out the first invention. This irradiation system includes a first-stage focusing lens 10 and a second-stage focusing lens 11 located in front of the objective lens 1 in order from the electron beam source side.
At least three stages of focusing lenses are arranged so as to form a second stage focusing lens 1 and a final stage focusing lens 5.
A diaphragm 13 having a predetermined aperture diameter for regulating the cross section of the electron beam bundle is installed near the opening 1. The first stage focusing lens 10 converts the real image of the electron beam source into an optical axis O in FIG.
The excitation is set so that the image is formed on point S above.
The second stage focusing lens 11 converts the real image of the point S into the second stage focusing lens 11.
It can be excited to form an image at any position on the optical axis O behind the stage focusing lens 11 from point P1 to point Pn. The third stage focusing lens 5 focuses the electron beam 6 whose trajectory has been changed by the excitation change of the second stage focusing lens 11 on a fixed point Q on the optical axis O, and forms a real image of the electron beam source at this position. In order to
The excitation can be changed in conjunction with the stage focusing lens 11. The objective lens 1 consists of a front objective lens body 2 and a rear objective lens body 3, and a sample 7 is disposed between both the objective lens bodies 2 and 3. It is preferable to use a short focus lens as the front objective lens 2, and this lens has a fixed point Q as an object point,
The electron beam 6 emitted from this point is focused on a point R on the sample 7, and excitation is set to form a real image of the electron beam source at this position. A fixed aperture may be used for the aperture 13 provided near the second stage focusing lens 11, or a movable aperture may be provided. Note that several more focusing lenses may be arranged in front of the first stage focusing lens 10.

かかる構成を有する照射系において、第1段集
束レンズ10によつて光軸O上の点Sに集束さ
れ、この位置に電子線源の実像を結像した電子線
は、第2段集束レンズ11によつて当該第2段集
束レンズ11と最終段集束レンズ5との間の光軸
O上の所定範囲の点に集束される。この場合、第
2段集束レンズ11がその可変範囲内における最
も弱い励磁に設定されたとき、電子線は符号6a
で示すように点P1に集束する。他方、第2段集
束レンズ11がその可変範囲内における最も強い
励磁に設定されたとき、電子線は符号6bで示す
ように点Pnに集束する。そして、この第2段集
束レンズ11の励磁を最弱励磁から最強励磁へと
連続して或は段階的に変えて行けば電子線の径路
は符号6aで示すものから符号6bで示すものに
まで変化し、結像点Pは点P1から点Pnへと変化
する。
In the irradiation system having such a configuration, the electron beam is focused by the first stage focusing lens 10 to a point S on the optical axis O, and the real image of the electron beam source is formed at this position. The light is focused on a predetermined range of points on the optical axis O between the second-stage focusing lens 11 and the final-stage focusing lens 5. In this case, when the second stage focusing lens 11 is set to the weakest excitation within its variable range, the electron beam is
It focuses on point P 1 as shown in . On the other hand, when the second stage focusing lens 11 is set to the strongest excitation within its variable range, the electron beam is focused at a point Pn, as indicated by 6b. If the excitation of the second stage focusing lens 11 is changed continuously or stepwise from the weakest excitation to the strongest excitation, the path of the electron beam changes from the one indicated by the symbol 6a to the one indicated by the symbol 6b. The imaging point P changes from point P1 to point Pn.

次に、第3段集束レンズ5では、その励磁強度
が第2段集束レンズ11の励磁強度に対して関数
的に可変し、この第3段集束レンズ5の像点が常
に光軸O上の定点Qに保つようになつているた
め、第2段集束レンズ11の励磁を如何ように変
化させても電子線6は定点Qに集束する。更にこ
の定点Qから放出された電子線6を前方対物レン
ズ体2により試料7上の点Rに結ぶ。前方対物レ
ンズ体2へ入射する電子線6は常に定点Qから放
出するため、対物レンズ1の励磁強度を常に一定
に保つておくことができる。
Next, in the third stage focusing lens 5, the excitation intensity is varied functionally with respect to the excitation strength of the second stage focusing lens 11, and the image point of the third stage focusing lens 5 is always on the optical axis O. Since the electron beam 6 is kept at the fixed point Q, the electron beam 6 is focused at the fixed point Q no matter how the excitation of the second stage focusing lens 11 is changed. Further, the electron beam 6 emitted from this fixed point Q is connected to a point R on the sample 7 by the front objective lens body 2. Since the electron beam 6 entering the front objective lens body 2 is always emitted from a fixed point Q, the excitation intensity of the objective lens 1 can always be kept constant.

このような方法で電子線の照射も行なうと、例
えば第2段集束レンズ11をその励磁可変範囲内
の最弱励磁にして点P1に結像させた場合、これ
によつて得られた電子線6aは試料7上に極めて
小さな集束角で結像する一方、第2段集束レンズ
11を最強励磁にして点Pnに結像させた場合は、
これによつて得られた電子線6bは試料7上に比
較的大きな集束角で結像する。そして、第2段集
束レンズ11による結像点Pが点P1から点Pnま
で動く間に、試料7に入射する電子線の集束角は
10-4radから10-1radの範囲で順次可変制御され
る。
If electron beam irradiation is also performed in this way, for example, if the second stage focusing lens 11 is excited at the weakest within its excitation variable range and focused on point P1 , the electrons obtained thereby While the line 6a is imaged on the sample 7 at an extremely small focusing angle, when the second stage focusing lens 11 is excited to the maximum and the image is formed on the point Pn,
The electron beam 6b thus obtained forms an image on the sample 7 at a relatively large convergence angle. Then, while the imaging point P by the second stage focusing lens 11 moves from point P1 to point Pn, the focusing angle of the electron beam incident on the sample 7 is
It is sequentially and variably controlled in the range of 10 -4 rad to 10 -1 rad.

また、前方対物レンズ体2に短焦点レンズを用
いていることにより、当該前方対物レンズ体2の
球面収差を小さな値に抑えることができ好都合で
ある。何故なら、試料7に入射する電子線6の集
束角が大きくなると、前方対物レンズ体2の球面
収差が集束角度の三乗に比例して増大し、試料7
上の照射スポツト径が大きくなり、また照射円内
部における集束角の均質性が破壊される。前方対
物レンズ体2に短焦点レンズを用いれば、その球
面収差が小さくなるため、上記の如き不都合を回
避することができる。
Further, by using a short focus lens for the front objective lens body 2, it is advantageous that the spherical aberration of the front objective lens body 2 can be suppressed to a small value. This is because when the convergence angle of the electron beam 6 incident on the sample 7 increases, the spherical aberration of the front objective lens body 2 increases in proportion to the cube of the convergence angle, and the sample 7
The diameter of the upper irradiation spot increases, and the homogeneity of the focusing angle within the irradiation circle is destroyed. If a short focal length lens is used for the front objective lens body 2, its spherical aberration will be reduced, so that the above-mentioned disadvantages can be avoided.

また、この照射系において、第1段集束レンズ
10の励磁強度を変化させ、当該第1段集束レン
ズ10の結像点を点Sとは異なつた点(例えば後
方の点)S′に固定し、電子線6を上記と同様な手
法により試料7上の点Qに集束させることもでき
る。かかる操作は、絞り13が第2段集束レンズ
11近傍に設置されていることによつてはじめて
遂行可能となる。何故なら、絞り13が最終段集
束レンズ5位置に設置されていると仮定すると、
絞り13に当つた電子線は当該絞り13によつて
カツトされるため、試料7に入射する電子線の集
束角を可変することが出来ないからである。一
方、絞り13を第1段集束レンズ10位置に設定
するとなると、電子線6に或る集束角を与えるた
めに必要な絞り13の開口径は第3図からも明ら
かなように一桁小さくする必要があり、製作上の
問題が生じる。なお、上記の如く第1段集束レン
ズ10の結像点を点Sから後方の点S′に変えた場
合の効果は点Rにおける照射円径の増大、即ち縮
小率の減少となつて現われる。
In addition, in this irradiation system, the excitation intensity of the first stage focusing lens 10 is changed, and the imaging point of the first stage focusing lens 10 is fixed at a point S' different from the point S (for example, a point at the rear). It is also possible to focus the electron beam 6 on a point Q on the sample 7 using a method similar to that described above. Such an operation can only be performed if the diaphragm 13 is installed near the second stage focusing lens 11. This is because, assuming that the aperture 13 is installed at the final stage focusing lens 5 position,
This is because the electron beam hitting the aperture 13 is cut off by the aperture 13, and therefore the convergence angle of the electron beam incident on the sample 7 cannot be varied. On the other hand, if the diaphragm 13 is set at the position of the first stage focusing lens 10, the aperture diameter of the diaphragm 13 necessary to give a certain focusing angle to the electron beam 6 will be one order of magnitude smaller, as is clear from FIG. is necessary, and production problems arise. As described above, the effect of changing the imaging point of the first stage focusing lens 10 from the point S to the rear point S' appears as an increase in the diameter of the irradiation circle at the point R, that is, a decrease in the reduction ratio.

さらに、この実施例において、前方対物レンズ
体2の縮小率は1/20以下の範囲、(数値の上では
1/15、1/10…というように大きくなる)で使用す
ることが好ましい。これは、試料7と前方対物レ
ンズ体2との間の距離を離すことによつて達成さ
れる。そして、かかる措置を施すことによつて試
料7の面の通常の凹凸に対する点Qの位置変動を
小さく抑えることができる。また、この点Qの位
置変動に照射系が対応できる様、第1段集束レン
ズ10、第2段集束レンズ11又は第3段集束レ
ンズ5のいずれかに励磁微調整手段を接続し、上
記いずれかの集束レンズを或る微小幅でもつて可
変出来るようにすることが好ましい。
Further, in this embodiment, it is preferable that the reduction ratio of the front objective lens body 2 is used within a range of 1/20 or less (numerically, it becomes larger such as 1/15, 1/10, etc.). This is achieved by increasing the distance between the sample 7 and the front objective body 2. By taking such measures, the positional fluctuation of the point Q with respect to the normal unevenness of the surface of the sample 7 can be suppressed to a small level. In addition, in order to enable the irradiation system to respond to the positional fluctuation of the point Q, an excitation fine adjustment means is connected to any of the first stage focusing lens 10, the second stage focusing lens 11, or the third stage focusing lens 5. It is preferable to make the focusing lens variable within a certain minute width.

第4図は、第2の発明を実施するための電子線
照射系の一実施例を示す図である。この照射系
は、最終段集束レンズ5と前方対物レンズ体2と
の間に追加の電子レンズ12を設置し、この追加
電子レンズ12と前方対物レンズ体2とによつて
一つの合成電子レンズを形成した点が上記第1の
発明の照射系と異なる。その他の構成及び当該構
成に基づく作用については上記第1の発明の場合
と同じである。
FIG. 4 is a diagram showing an embodiment of an electron beam irradiation system for carrying out the second invention. In this irradiation system, an additional electron lens 12 is installed between the final stage focusing lens 5 and the front objective lens body 2, and one composite electron lens is formed by this additional electron lens 12 and the front objective lens body 2. It differs from the irradiation system of the first invention in that it is formed. The other configurations and the effects based on the configurations are the same as in the first invention.

かかる構成を有する照射系において、追加電子
レンズ12と、前方対物レンズ体2との合成縮小
率が1/20より小さくなる様に設定して上記第1の
発明における場合と同様な作用を行なわせる。こ
れにより、対物レンズ1の励磁強度を一定の値に
保ちながら試料7に入射する電子線6の集束角を
連続的に変化させることが出来る上、試料7の面
に凹凸があつた場合における点Qの位置変動を上
記第1の発明における場合と同じ様に適格に対応
させることが可能となる。追加電子レンズ12の
効用は、対物レンズ磁極片を変更(交換)したり
或は試料7の位置を変更したりすることなく当該
追加電子レンズ12の励磁強度を適当な値に設定
するだけで追加電子レンズ12と前方対物レンズ
体との合成縮小率を1/20以下に選ぶことができる
ので対物レンズ磁極片の構造、及び試料7の位置
及び対物レンズの励磁強度の設定を、専ら結像系
の分解能が最もよい位置に優先的に選び得ること
にある。
In the irradiation system having such a configuration, the combined reduction ratio of the additional electron lens 12 and the front objective lens body 2 is set to be smaller than 1/20, so that the same effect as in the first invention is performed. . This makes it possible to continuously change the convergence angle of the electron beam 6 incident on the sample 7 while keeping the excitation intensity of the objective lens 1 at a constant value. It becomes possible to appropriately respond to the positional fluctuation of Q in the same manner as in the first invention. The effect of the additional electron lens 12 can be added by simply setting the excitation intensity of the additional electron lens 12 to an appropriate value without changing (replacing) the objective lens magnetic pole piece or changing the position of the sample 7. Since the composite reduction ratio of the electron lens 12 and the front objective lens body can be selected to be 1/20 or less, the structure of the objective lens magnetic pole piece, the position of the sample 7, and the setting of the excitation intensity of the objective lens can be determined exclusively by the imaging system. The reason is that the position with the best resolution can be selected preferentially.

以上説明したように、本発明によれば、電子線
装置の照射系において、最終段集束レンズとその
前方位置に設置された集束レンズとの励磁を互い
に連動させ、最終段集束レンズの結像点を前方対
物レンズの物点にほぼ一致させたため、対物レン
ズの励磁強度を可変することなく、試料に入射す
る電子線の集束角を可変することが出来るように
なつた。このため、新材料の開発研究等において
採用される集束電子線回折法、或は結晶の高分解
能像を得る場合等において、操作が簡単でしかも
細かく角度変化された観察像が得られることにな
り観察精度を向上させることができるという効果
を奏することができる。
As explained above, according to the present invention, in the irradiation system of an electron beam apparatus, the excitation of the final stage focusing lens and the focusing lens installed in a position in front of the final stage focusing lens is linked to each other, and the imaging point of the final stage focusing lens is By making the electron beam almost coincide with the object point of the front objective lens, it became possible to vary the convergence angle of the electron beam incident on the sample without varying the excitation intensity of the objective lens. For this reason, it is easy to operate and allows observation images with finely changed angles to be obtained when using focused electron diffraction, which is used in research and development of new materials, or when obtaining high-resolution images of crystals. It is possible to achieve the effect that observation accuracy can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は電子線装置における電子照射系の一従
来例を示す図、第2図は上記従来の照射系におい
て最終段集束レンズの励磁強度を変化させた場合
における電子線源の結像状態を示す図、第3図は
第1の発明の実施に使用する電子線照射系を示す
図、第4図は第2の発明の実施に使用する電子線
照射系を示す図である。 1……対物レンズ、2……前方対物レンズ体、
3……後方対物レンズ体、5……最終段集束レン
ズ、6……電子線、7……試料、8,13……絞
り、10……第1段集束レンズ、11……第2段
集束レンズ、12……追加電子レンズ。
Fig. 1 shows a conventional example of an electron irradiation system in an electron beam device, and Fig. 2 shows the image formation state of the electron beam source when the excitation intensity of the final stage focusing lens is changed in the above-mentioned conventional irradiation system. FIG. 3 is a diagram showing an electron beam irradiation system used for implementing the first invention, and FIG. 4 is a diagram showing an electron beam irradiation system used for implementing the second invention. 1... Objective lens, 2... Front objective lens body,
3... Rear objective lens body, 5... Final stage focusing lens, 6... Electron beam, 7... Sample, 8, 13... Aperture, 10... First stage focusing lens, 11... Second stage focusing Lens, 12...Additional electronic lens.

Claims (1)

【特許請求の範囲】 1 電子線源と、前方対物レンズ体及び後方対物
レンズ体から構成された対物レンズとを有する試
料観察用の電子線装置の、対物レンズの前方に、
電子線源側から第1段、第2段及び最終段の順に
少なくとも3段の集束レンズを配置し、第1段集
束レンズの励磁を一定に保つ一方、第2段集束レ
ンズと最終段集束レンズとの励磁を互いに連動さ
せ、最終段集束レンズの結像点を前方対物レンズ
体の物点にほぼ一致するように固定したことを特
徴とする電子線装置における電子線の照射方法。 2 第2段集束レンズ近傍には電子線束の断面を
規制する絞りが設けてあることを特徴とする特許
請求の範囲第1項記載の電子線装置における電子
線の照射方法。 3 最終段集束レンズは第2段集束レンズと連動
して励磁変化すると共に、最終段集束レンズ自体
で励磁を微小変化させるようになつていることを
特徴とする特許請求の範囲第1項又は第2項記載
の電子線装置における電子線の照射方法。 4 前方対物レンズ体の縮小率は1/20よりも小さ
く設定されていることを特徴とする特許請求の範
囲第1項乃至第3項のいずれかに記載の電子線装
置における電子線の照射方法。 5 第1段集束レンズに複数ステツプの可変段数
を設け、この複数ステツプのうちのいずれの励磁
強度に対しても第2段集束レンズと第3段集束レ
ンズとを連動制御して常に第3段集束レンズの結
像点を定まつた位置に設定するようにしたことを
特徴とする特許請求の範囲第1項乃至第4項のい
ずれかに記載の電子線装置における電子線の照射
方法。 6 電子線源と、前方対物レンズ体及び後方対物
レンズ体から構成された対物レンズとを有する試
料観察用の電子線装置の、対物レンズの前方に、
電子線源側から第1段、第2段及び最終段の順に
少なくとも3段の集束レンズを配置する一方、最
終段集束レンズと前方対物レンズ体との間に追加
の電子レンズを設け、第1段集束レンズの励磁を
一定に保つ一方、第2段集束レンズと最終段集束
レンズとの励磁を互いに連動させて最終段集束レ
ンズの像点を上記追加電子レンズの物点にほぼ一
致させ、追加電子レンズ及び対物レンズの励磁強
度を一定に保つたままで第2段集束レンズの励磁
を可変することにより、試料に入射する電子線の
集束角を可変するようにしたことを特徴とする電
子線装置における電子線の照射方法。 7 追加電子レンズと前方対物レンズ体との合成
縮小率は1/20よりも小さく設定されていることを
特徴とする特許請求の範囲第5項記載の電子線装
置における電子線の照射方法。 8 第1段集束レンズに複数ステツプの可変段数
を設け、この複数ステツプのうちのいずれの励磁
強度に対しても第2段集束レンズと第3段集束レ
ンズとを連動制御して常に第3段集束レンズの結
像点を定まつた位置に設定するようにしたことを
特徴とする特許請求の範囲第6項又は第7項記載
の電子線装置における電子線の照射方法。
[Scope of Claims] 1. In an electron beam apparatus for sample observation having an electron beam source and an objective lens composed of a front objective lens body and a rear objective lens body, in front of the objective lens,
At least three stages of focusing lenses are arranged in the order of the first stage, second stage, and final stage from the electron beam source side, and while the excitation of the first stage focusing lens is kept constant, the second stage focusing lens and the final stage focusing lens are 1. A method for irradiating an electron beam in an electron beam apparatus, characterized in that the excitations of and are linked to each other, and the imaging point of the final stage focusing lens is fixed so as to substantially coincide with the object point of a front objective lens body. 2. An electron beam irradiation method in an electron beam apparatus according to claim 1, characterized in that a diaphragm for regulating the cross section of the electron beam bundle is provided near the second stage focusing lens. 3. Claims 1 or 3, characterized in that the final stage focusing lens changes its excitation in conjunction with the second stage focusing lens, and the final stage focusing lens itself slightly changes the excitation. A method for irradiating an electron beam in the electron beam apparatus according to item 2. 4. An electron beam irradiation method in an electron beam apparatus according to any one of claims 1 to 3, wherein the reduction ratio of the front objective lens body is set to be smaller than 1/20. . 5 The first stage focusing lens is provided with a variable number of multiple steps, and the second stage focusing lens and the third stage focusing lens are controlled in conjunction with each other for any excitation intensity of the multiple steps, so that the third stage is always 5. A method for irradiating an electron beam in an electron beam apparatus according to any one of claims 1 to 4, characterized in that the imaging point of the focusing lens is set at a fixed position. 6. In front of the objective lens of an electron beam apparatus for sample observation, which has an electron beam source and an objective lens composed of a front objective lens body and a rear objective lens body,
At least three stages of focusing lenses are arranged in the order of a first stage, a second stage, and a final stage from the electron beam source side, and an additional electron lens is provided between the final stage focusing lens and the front objective lens body, While keeping the excitation of the stage focusing lens constant, the excitation of the second stage focusing lens and the final stage focusing lens are linked to each other so that the image point of the final stage focusing lens almost coincides with the object point of the additional electron lens. An electron beam device characterized in that the convergence angle of an electron beam incident on a sample is varied by varying the excitation of a second stage focusing lens while keeping the excitation intensities of the electron lens and objective lens constant. electron beam irradiation method. 7. An electron beam irradiation method in an electron beam apparatus according to claim 5, wherein the combined reduction ratio of the additional electron lens and the front objective lens body is set to be smaller than 1/20. 8 A variable number of multiple steps is provided in the first stage focusing lens, and the second stage focusing lens and the third stage focusing lens are controlled in conjunction with each other for any excitation intensity among these multiple steps, so that the third stage is always 8. An electron beam irradiation method in an electron beam apparatus according to claim 6 or 7, characterized in that the imaging point of the focusing lens is set at a fixed position.
JP58094906A 1983-05-31 1983-05-31 Electron beam irradiating method in electron beam system Granted JPS59221952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58094906A JPS59221952A (en) 1983-05-31 1983-05-31 Electron beam irradiating method in electron beam system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58094906A JPS59221952A (en) 1983-05-31 1983-05-31 Electron beam irradiating method in electron beam system

Publications (2)

Publication Number Publication Date
JPS59221952A JPS59221952A (en) 1984-12-13
JPH0161228B2 true JPH0161228B2 (en) 1989-12-27

Family

ID=14123056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58094906A Granted JPS59221952A (en) 1983-05-31 1983-05-31 Electron beam irradiating method in electron beam system

Country Status (1)

Country Link
JP (1) JPS59221952A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2605143B1 (en) * 1986-10-14 1994-04-29 Thomson Csf ELECTRONIC OPTICS, ILLUMINATION AND OPENING LIMITATION DEVICE, AND ITS APPLICATION TO AN ELECTRON BEAM LITHOGRAPHY SYSTEM

Also Published As

Publication number Publication date
JPS59221952A (en) 1984-12-13

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