JPH0161238B2 - - Google Patents
Info
- Publication number
- JPH0161238B2 JPH0161238B2 JP8140881A JP8140881A JPH0161238B2 JP H0161238 B2 JPH0161238 B2 JP H0161238B2 JP 8140881 A JP8140881 A JP 8140881A JP 8140881 A JP8140881 A JP 8140881A JP H0161238 B2 JPH0161238 B2 JP H0161238B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- core tube
- reflecting mirror
- shaft
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 25
- 230000005855 radiation Effects 0.000 claims description 24
- 239000007789 gas Substances 0.000 description 23
- 239000013078 crystal Substances 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 15
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000001304 sample melting Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Control Of Resistance Heating (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は、フローテイングゾーン法による単結
晶の製造等に用いられる輻射線加熱装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a radiation heating apparatus used for manufacturing single crystals by the floating zone method.
輻射線加熱装置は、回転楕円面鏡から成る反射
鏡の一方の焦点に熱光源をおき、もう一方の焦点
に試料をおいて、熱光源から出した光(輻射線)
の試料側の焦点に集光し、試料を加熱するもので
ある。この装置には反射鏡を1個の回転楕円面の
みで構成する単楕円型、反射鏡が2個の回転楕円
面の組合せで構成される双楕円型、更に反射鏡を
3個以上の回転楕円面の組合わせで構成する多楕
円型とがある。 A radiation heating device places a thermal light source at one focus of a reflecting mirror made of a spheroidal mirror, places a sample at the other focus, and heats the light (radiation) emitted from the thermal light source.
The light is focused on a focal point on the sample side and heats the sample. This device has a single elliptical type where the reflecting mirror is made up of only one spheroidal surface, a bielliptic type where the reflecting mirror is made up of a combination of two spheroidal surfaces, and a bielliptic type where the reflecting mirror is made up of a combination of two spheroidal surfaces, and a three or more spheroidal reflecting mirror. There is a multi-elliptical type that is composed of a combination of surfaces.
通常、輻射線加熱装置では、反射鏡の汚染を防
ぎ試料のまわりを任意の雰囲気ガスで包むなどの
目的で、石英などの耐熱性ガラスで構成された炉
心管を試料の外側に装着するが、本発明はこの炉
心管の装着のための構造に関するものである。 Usually, in a radiation heating device, a core tube made of heat-resistant glass such as quartz is attached to the outside of the sample in order to prevent contamination of the reflecting mirror and to surround the sample with a desired atmospheric gas. The present invention relates to a structure for mounting this furnace core tube.
次に従来の輻射線加熱装置の欠点を図に従つて
説明する。 Next, the drawbacks of the conventional radiation heating device will be explained with reference to the drawings.
第1図は単楕円型の輻射線加熱装置の従来例の
主要部を断面にした部分側面図である。 FIG. 1 is a partial side view showing a main part of a conventional single elliptical radiation heating device in cross section.
図において、101は反射鏡であり、その反射
鏡面102はF1,F2を焦点とする楕円をF1F2を
通る軸上に回転させた回転楕円面である。また反
射鏡101は、装置に固定された固定反射鏡部1
03と開閉可能な開閉反射鏡部104からなつて
いる。105は反射鏡面102の一方の焦点F1
におかれた熱光源ランプであり、通常はハロゲン
ランプが用いられるが、高加熱温度が要求される
場合はキセノンランプがよく使用されている。 In the figure, 101 is a reflecting mirror, and its reflecting mirror surface 102 is an ellipsoid of revolution obtained by rotating an ellipse with F 1 and F 2 as focal points on an axis passing through F 1 F 2 . Further, the reflecting mirror 101 is a fixed reflecting mirror section 1 fixed to the device.
03 and an opening/closing reflecting mirror section 104 that can be opened and closed. 105 is one focal point F 1 of the reflecting mirror surface 102
A halogen lamp is usually used, but a xenon lamp is often used when high heating temperatures are required.
106は上側試料、107は下側試料であり、
これらの試料106,107の端面は反射鏡面1
02の他の一方の焦点F2の近傍に配置され、熱
光源ランプ105から出た光は焦点F2上に集光
され、試料106,107を加熱熔融域108
(メルテイングゾーン)により結合する。 106 is the upper sample, 107 is the lower sample,
The end faces of these samples 106 and 107 are reflective mirror surfaces 1
The light emitted from the thermal light source lamp 105 is focused on the focal point F 2 and heats the samples 106 and 107 in the melting zone 108.
(melting zone).
また、109は炉心管であり、反射鏡面102
を試料106,107から遮閉し、試料から発生
するガスが反射鏡面に到達して付着し、反射効率
が低下するのを防ぐ他、炉心管内に任意の雰囲気
ガスを流通させまたは充填し試料のまわりを所定
圧力の雰囲気ガスで満たすことを目的として設置
されており、石英のような耐熱性ガラスで作られ
ている。炉心管109は、上下の炉心管取付リン
グ110,111と0リングホルダ112,11
3及び0リング114,115によつてそれぞれ
上シヤフト軸受116及び下シヤフト軸受117
に固定されている。 Further, 109 is a reactor core tube, and a reflecting mirror surface 102
In addition to preventing the gas generated from the samples from reaching and adhering to the reflecting mirror surface and reducing the reflection efficiency, the reactor core tube is also sealed off from the samples 106 and 107 to prevent the reflection efficiency from decreasing. It is installed for the purpose of filling the surrounding area with atmospheric gas at a predetermined pressure, and is made of heat-resistant glass such as quartz. The core tube 109 has upper and lower core tube attachment rings 110, 111 and O-ring holders 112, 11.
Upper shaft bearing 116 and lower shaft bearing 117 by 3 and 0 rings 114 and 115, respectively.
Fixed.
一方、上側試料106は上試料ホルダ118を
介して上シヤフト119に、また下側試料107
は下側試料ホルダ120を介して下シヤフト12
1に、それぞれ固定されている。 On the other hand, the upper sample 106 is attached to the upper shaft 119 via the upper sample holder 118, and the lower sample 107 is attached to the upper shaft 119 via the upper sample holder 118.
is connected to the lower shaft 12 via the lower sample holder 120.
1, respectively.
上シヤフト119は、上シヤフト軸受116、
上シヤフトホルダ122及び上スラフトストツパ
123により回転自由に固定され、上シヤフトホ
ルダ122に固定されたモータ124からのベル
ト駆動により回転する。また下シヤフト121
は、下シヤフト軸受117、下シヤフトホルダ1
25及び下スラストストツパ126によつて回転
自由に固定され、下シヤフトホルダ125に固定
されたモータ127からのベルト駆動により回転
する。 The upper shaft 119 has an upper shaft bearing 116,
It is rotatably fixed by an upper shaft holder 122 and an upper slough stopper 123, and is rotated by a belt drive from a motor 124 fixed to the upper shaft holder 122. Also, the lower shaft 121
are lower shaft bearing 117, lower shaft holder 1
25 and a lower thrust stopper 126, and is rotated by a belt drive from a motor 127 fixed to the lower shaft holder 125.
上下シヤフトを回転駆動するためのプーリ12
8,129は、上下シヤフトホルダ122,12
5に回転自由に結合されており、上下シヤフトと
プーリ128,129はビス止めやピンなどの手
段でトルクが伝達されるように結合され、しかも
上下シヤフトとプーリー128,129とは着脱
が可能な構造となつている。 Pulley 12 for rotationally driving the upper and lower shafts
8, 129 are upper and lower shaft holders 122, 12
5, and the upper and lower shafts and pulleys 128, 129 are connected to each other by means such as screws or pins so that torque can be transmitted, and the upper and lower shafts and pulleys 128, 129 are removable. It has a structure.
また反射鏡101はメインフレーム130に固
定され、上下シヤフト軸受116,117及び下
シヤフトホルダ125は移動フレーム131に固
定され移動フレーム131はメインフレーム13
0に固定された試料送り機構132の送りねじ1
33により上下に移動できる。すなわち、試料と
反射鏡の相対位置は、試料送り機構132で移動
できる。更に移動フレーム131に固定されたシ
ヤフト調整機構133の送りねじ134により上
シヤフトホルダ122が移動フレーム131に対
して上下に移動することで、上シヤフトと下シヤ
フトの上下相対位置の調整ができる。 Further, the reflecting mirror 101 is fixed to the main frame 130, the upper and lower shaft bearings 116, 117 and the lower shaft holder 125 are fixed to the movable frame 131, and the movable frame 131 is attached to the main frame 13.
Feed screw 1 of sample feed mechanism 132 fixed at 0
33 allows it to move up and down. That is, the relative positions of the sample and the reflecting mirror can be moved by the sample feeding mechanism 132. Furthermore, the upper shaft holder 122 is moved up and down with respect to the movable frame 131 by the feed screw 134 of the shaft adjustment mechanism 133 fixed to the movable frame 131, so that the vertical relative positions of the upper shaft and the lower shaft can be adjusted.
こうした従来構造において単結晶の製造を行う
場合には、下側試料107として種結晶となすべ
き結晶を用い、上側試料106には種結晶と同材
質のこれから成長させようとする結晶の焼結素材
棒や多結晶素材棒を用い、試料送り機構、シヤフ
ト調整機構を調整して上下試料の相対する端面を
反射鏡の焦点F2の近傍に設定し、熱光源ランプ
を点灯して上下試料を加熱熔融させ、上下試料の
間を熔融域108により結合し、試料送り機構1
32により上下試料を除々に下方に動かすことに
より熔融域を除々に移動させ、所望の単結晶を成
長させる。 When manufacturing a single crystal with such a conventional structure, a crystal to be used as a seed crystal is used as the lower sample 107, and a sintered material of the same material as the seed crystal for the crystal to be grown is used as the upper sample 106. Using a rod or polycrystalline material rod, adjust the sample feeding mechanism and shaft adjustment mechanism to set the opposing end surfaces of the upper and lower samples near the focal point F2 of the reflector, then turn on the thermal light source lamp to heat the upper and lower samples. The upper and lower samples are joined by the melting region 108, and the sample feeding mechanism 1
32, the upper and lower samples are gradually moved downward to gradually move the melting zone and grow a desired single crystal.
なお、この場合、試料のまわりには各試料に適
した雰囲気ガス(例えばO2、N2、Ar、Heなど)
で覆うことが望ましいが、これは雰囲気ガスを下
シヤフト軸受をあけた雰囲気ガス注入口135か
ら注入し、上シヤフト軸受におけた雰囲気ガス排
出口136から排出し、炉心管109の中を一定
の雰囲気ガスの流れで満たすことにより実現でき
るようになつている。 In this case, an atmosphere gas suitable for each sample (e.g. O 2 , N 2 , Ar, He, etc.) is placed around the sample.
It is desirable to cover the inside of the furnace tube 109 with a certain amount of air by injecting the atmospheric gas through the atmospheric gas inlet 135 opened in the lower shaft bearing and exhausting it through the atmospheric gas outlet 136 in the upper shaft bearing. This can be achieved by filling it with a flow of atmospheric gas.
また試料によつては加熱時にガスを発生するも
のもあるが、炉心管の内部は0リング114,1
15,137,138でシールされている。発生
ガスが反射鏡の面に達して冷却されて付着するな
どして反射鏡の反射率を低下させることはなく、
炉心管が発生ガスの付着で曇ることがあつても1
回の実験毎に炉心管の交換を行なえば加熱効率の
低下も小さく実用上殆ど問題とならない。発生ガ
スが有害な場合も勿論あるが、雰囲気ガス出口か
ら出たガスをトラツプなどの有害ガス処理手段を
通すことにより作業者の健康に悪影響を与えるこ
とはないようになつている。 Also, some samples generate gas when heated, but the inside of the core tube is O-ring 114, 1
15, 137, 138. The generated gas will not reach the surface of the reflector, be cooled and adhere to it, and reduce the reflectance of the reflector.
Even if the furnace core tube becomes cloudy due to adhesion of generated gas, 1
If the core tube is replaced after each experiment, the reduction in heating efficiency will be small and pose no practical problem. Of course, there are cases in which the generated gas is harmful, but by passing the gas emitted from the atmospheric gas outlet through a harmful gas treatment means such as a trap, it is possible to prevent it from adversely affecting the health of the workers.
更に発生ガスの量を減らすために炉心管内の雰
囲気ガスの圧力を数気圧にすることも考えられる
が、この場合も雰囲気ガス出入口に接続するバル
ブ(図示せず)を閉じることにより、高圧の雰囲
気ガスを炉心管内に封入することが可能である。 Furthermore, in order to reduce the amount of gas generated, it is possible to reduce the pressure of the atmospheric gas in the reactor core tube to several atmospheres, but in this case as well, by closing the valve (not shown) connected to the atmospheric gas inlet and outlet, the high-pressure atmosphere can be reduced. It is possible to seal gas within the reactor core tube.
このように炉心管の果す役割は大きいが、この
着脱には従来問題が多かつた。次に従来装置にお
ける炉心管の着脱方法と着脱に伴う諸問題につい
て述べる。 Although the core tube plays a large role in this way, there have been many problems in the past in attaching and detaching it. Next, we will discuss the method of attaching and detaching the core tube in conventional equipment and the problems associated with attaching and detaching it.
第2図は、第1図に示した従来の輻射線加熱装
置における炉心管の着脱操作を示す輻射線加熱装
置主要部の断面図である。図からも判るように、
炉心管の着脱の際にはまず開閉反射鏡104を開
き、次に上側試料106を伴つた上シヤフト11
9及び下側試料107を伴つた下シヤフト121
をそれぞれ装置の上及び下方向に引き抜くことに
よつて装置から取外し、しかる後炉心管取付リン
グ110,111、0リングホルダ112,11
3及び0リング114,115をつけたままの炉
心管を上シヤフト軸受116に斜めに挿入するよ
うにして装着しまたは取外しを行う。 FIG. 2 is a cross-sectional view of the main part of the radiation heating apparatus shown in FIG. 1, showing an operation for attaching and detaching the furnace tube in the conventional radiation heating apparatus. As you can see from the figure,
When attaching and detaching the reactor core tube, first open the opening/closing reflector 104, then open the upper shaft 11 with the upper sample 106.
9 and lower shaft 121 with lower sample 107
are removed from the device by pulling them upward and downward, respectively, and then the core tube mounting rings 110, 111 and the O-ring holders 112, 11 are removed.
The reactor core tube with the No. 3 and O rings 114 and 115 still attached is inserted or removed obliquely into the upper shaft bearing 116.
従来の輻射線加熱装置ではこのような操作をす
る構造になつていたので、試料を取付けたままの
シヤフトを上下に引抜くため装置の上方及び下方
にシヤフトと試料を含めた長さ以上の空間を確保
しておく必要があつた。従つて、装置の高さは第
1図の上シヤフトから下シヤフトまでの全長S1の
倍以上にする必要があり、装置の高さは非常に大
きくなつていた。例えば従来の単楕円型の輻射線
加熱装置では、下シヤフト下端から下側試料上端
までの長さは約400mmであるので装置下側に約400
mmの高さの空間が必要であり、上シヤフトの上端
から上側装置の下までの長さは約550mmであるの
で装置上側には約550mmの高さの空間が必要にな
り、合わせて約950mmの高さが余分に必要となつ
ていた。 Conventional radiation heating equipment was designed to perform operations like this, so in order to pull the shaft up and down with the sample still attached, a space larger than the length including the shaft and sample was created above and below the equipment. It was necessary to secure. Therefore, the height of the apparatus needs to be more than twice the total length S1 from the upper shaft to the lower shaft in FIG. 1, making the height of the apparatus extremely large. For example, in a conventional single elliptical radiation heating device, the length from the bottom end of the lower shaft to the top end of the lower sample is approximately 400 mm, so there is approximately 400 mm at the bottom of the device.
Since the length from the top of the upper shaft to the bottom of the upper device is approximately 550 mm, a space with a height of approximately 550 mm is required above the device, for a total of approximately 950 mm. The extra height was needed.
また、上下シヤフトの着脱の際には、プーリー
と上下シヤフトとの結合の解除やスラストストツ
パの取外しなど面倒な作業が必要で、上下方向に
シヤフトを引き抜く作業も含め、これらの作業は
装置上方および下方での無理な姿勢での作業を余
儀なくされ、非常にやつかいであつた。例えば第
1図の例では上のプーリー128の位置は床上
1650mmであり、下のプーリー129の位置は床上
450mmである。 Furthermore, when attaching and detaching the upper and lower shafts, it is necessary to perform troublesome work such as releasing the connection between the pulley and the upper and lower shafts and removing the thrust stopper. He was forced to work in an awkward position and was extremely difficult to work with. For example, in the example shown in FIG. 1, the upper pulley 128 is located above the floor.
1650mm, and the position of the lower pulley 129 is above the floor.
It is 450mm.
更に従来の装置における炉心管の着脱はあらか
じめ炉心管に炉心管リング110,111などの
邪魔なのを取り付けておかねばならず、また炉心
管取付けリングのねじによつて上下シヤフト軸受
に炉心管を固定する作業はねじ結合のため作業性
が悪かつた。 Furthermore, in order to attach or remove the core tube in conventional equipment, it is necessary to attach obstacles such as core tube rings 110 and 111 to the core tube in advance, and to fix the core tube to the upper and lower shaft bearings using the screws of the core tube attachment ring. The work involved poor workability due to the screw connection.
このように従来の輻射線加熱装置では装置の高
さが大きく、炉心管の着脱作業が非常に繁雑で、
無理な作業姿勢を余儀なくされるなどの欠点があ
つた。本発明はこれらの欠点を除去するために、
炉心管が反射鏡の内部に挾持し得る構造にしたも
のである。以下図面に従つて詳細に説明する。 As described above, with conventional radiation heating equipment, the height of the equipment is large, and the work of attaching and detaching the reactor core tube is extremely complicated.
There were drawbacks such as being forced to work in an awkward position. The present invention eliminates these drawbacks by:
The structure is such that the core tube can be held inside the reflector. A detailed explanation will be given below with reference to the drawings.
第3図は本発明の一実施例を示す単楕円型の輻
射線加熱装置の主要部を断面にした側面図であ
る。図において201が反射鏡であり、その反射
鏡面202は焦点F1′,F2′をもつ回転楕円面であ
る。また反射鏡201は、固定反射鏡部203と
開閉可能な開閉反射鏡部204からなつている。
205は反射鏡面202の一方の焦点F1′におか
れた熱光源ランプである。206は上側試料、2
07は下側試料であり、208は熔融域(メルテ
イングゾーン)である。 FIG. 3 is a cross-sectional side view of a main part of a single elliptical radiation heating device showing an embodiment of the present invention. In the figure, 201 is a reflecting mirror, and its reflecting mirror surface 202 is an ellipsoid of revolution having focal points F 1 ' and F 2 '. Further, the reflecting mirror 201 includes a fixed reflecting mirror section 203 and an openable/closable reflecting mirror section 204.
A thermal light source lamp 205 is placed at one focal point F 1 ' of the reflecting mirror surface 202. 206 is the upper sample, 2
07 is the lower sample, and 208 is the melting zone.
また209は炉心管であり、石英のような耐熱
性ガラスでできたガラス管210とその両端にか
ぶせたシリコンゴムのような耐熱性の弾性体でで
きたキヤツプ211から構成されている。炉心管
209は、圧縮コイルバネ212の押圧力によ
り、炉心管ホルダー213にて反射鏡内に押圧挾
持固定されている。炉心管ホルダー213はレバ
ー214を操作することで反射鏡内を上下に運動
できる。 A furnace core tube 209 is composed of a glass tube 210 made of heat-resistant glass such as quartz and a cap 211 made of a heat-resistant elastic material such as silicone rubber placed over both ends of the glass tube 210. The furnace core tube 209 is pressed and fixed within the reflector by a furnace tube holder 213 by the pressing force of a compression coil spring 212 . The core tube holder 213 can be moved up and down within the reflector by operating a lever 214.
一方、上側試料206は、上試料ホルダー21
5を介して上シヤフト216に固定され、上シヤ
フト216は上シヤフト軸受217で回転自由に
固定されモータ218で回転駆動される。また下
側試料207は、下側試料ホルダー219を介し
て下シヤフト220に固定され、下シヤフト22
0は下シヤフト軸受221で回転自由に固定され
てモータ222で回転駆動される。 On the other hand, the upper sample 206 is attached to the upper sample holder 21.
5 to an upper shaft 216, and the upper shaft 216 is rotatably fixed by an upper shaft bearing 217 and rotationally driven by a motor 218. Further, the lower sample 207 is fixed to the lower shaft 220 via the lower sample holder 219.
0 is rotatably fixed by a lower shaft bearing 221 and rotationally driven by a motor 222.
更に、反射鏡201、上シヤフト軸受217お
よび下シヤフト軸受221は、装置フレーム22
3に固定された反射鏡送り機構224、上シヤフ
ト送り機構225、下シヤフト機構226のそれ
ぞれの送りねじによりそれぞれ独立に上下方向に
移動できる。 Further, the reflecting mirror 201, the upper shaft bearing 217, and the lower shaft bearing 221 are attached to the device frame 22.
The reflecting mirror feeding mechanism 224, the upper shaft feeding mechanism 225, and the lower shaft feeding mechanism 226 fixed to the mirror 3 can be moved vertically independently by respective feeding screws.
また反射鏡201の内側227は0リング22
8,229,230,231,232でシールさ
れ、外気との気密が保たれている。また反射鏡の
内側227での炉心管209の内外は炉心管のキ
ヤツプ211でシールされており、試料等から発
生するガスによつて反射鏡面が汚染されるのを防
いでいる。更に反射鏡201には、炉心管209
の内部に通じる雰囲気ガス注入口233および排
出口234が設けられ、試料周辺を所定の雰囲気
ガスで覆うことができる。ここで炉心管のキヤツ
プ211におけるシールは完全気密でなくとも試
料から発生するガスが反射鏡面202に到達する
のを防げればよい。 Also, the inner side 227 of the reflecting mirror 201 has an O ring 22.
8, 229, 230, 231, and 232 to maintain airtightness from the outside air. Furthermore, the inside and outside of the reactor core tube 209 at the inner side 227 of the reflector are sealed with a cap 211 of the reactor core tube to prevent the reflector surface from being contaminated by gases generated from the sample or the like. Further, the reflecting mirror 201 includes a furnace core tube 209.
An atmospheric gas inlet 233 and an exhaust port 234 communicating with the inside of the sample are provided, so that the area around the sample can be covered with a predetermined atmospheric gas. Here, the seal in the cap 211 of the furnace tube does not have to be completely airtight as long as it can prevent the gas generated from the sample from reaching the reflecting mirror surface 202.
第4図は第3図の実施例における炉心管の着脱
操作を示した一部断面の側面図であり、以下第3
図の実施例における炉心管の着脱を第4図に従つ
て説明する。 FIG. 4 is a partially sectional side view showing the operation of attaching and detaching the reactor core tube in the embodiment shown in FIG.
The attachment and detachment of the reactor core tube in the illustrated embodiment will be explained with reference to FIG. 4.
炉心管を取り付ける場合は、第4図に示す如く
まず開閉反射鏡204を開き、この時できる反射
鏡の開口窓236を通して上側試料206、下側
試料207を上シヤフト216および下シヤフト
220にそれぞれ装着し、その後上シヤフト21
6および下シヤフト220をそれぞれの送り機構
225,226により上下に移動させ、上側試料
および下側試料を炉心管の挿入される空間の外側
に位置させる。次に炉心管ホルダ213をレバー
214より持ちあげて炉心管を開口窓236から
反射鏡内に挿入し第1図のように圧縮コイルバネ
212の押圧力により炉心管209を炉心管ホル
ダ213で挾持する。このため炉心管の長さは反
射鏡開口部236より小さくしてある。次に上側
試料206および下側試料207の位置を、それ
ぞれの対向する端面が焦点F2′の近傍にくるよう
に送り機構225,226で調整し開閉反射鏡2
04を閉じれば、試料熔融の準備が完了する。こ
の状態で熱光源ランプ205を点灯し試料を加熱
すれば、第3図のように上下試料が加熱熔融され
た熔融域208で結合される。 When attaching the reactor core tube, first open the opening/closing reflector 204 as shown in FIG. 4, and attach the upper sample 206 and lower sample 207 to the upper shaft 216 and lower shaft 220, respectively, through the opening window 236 of the reflector created at this time. Then, upper shaft 21
6 and the lower shaft 220 are moved up and down by the respective feed mechanisms 225 and 226, and the upper sample and the lower sample are positioned outside the space into which the reactor core tube is inserted. Next, lift the furnace tube holder 213 from the lever 214, insert the furnace tube into the reflector through the opening window 236, and clamp the furnace tube 209 with the furnace tube holder 213 by the pressing force of the compression coil spring 212 as shown in FIG. . For this reason, the length of the reactor core tube is made smaller than the reflector opening 236. Next, the positions of the upper sample 206 and the lower sample 207 are adjusted using the feed mechanisms 225 and 226 so that their opposing end surfaces are near the focal point F 2 ', and the opening/closing reflector 2
04, preparation for sample melting is completed. In this state, if the thermal light source lamp 205 is turned on and the sample is heated, the upper and lower samples are joined together in the melting zone 208 where they are heated and melted, as shown in FIG.
フローテイングゾーン法による単結晶の製造を
行う場合には、下側試料207として種結晶を用
い、上側試料206に同材質の焼結素材棒を用い
て、反射鏡送り機構224で反射鏡201を除々
に上方に移動させ、結果として熔融域208を
除々に上方に移動させるようにして種結晶上に結
晶を成長させる。 When manufacturing a single crystal by the floating zone method, a seed crystal is used as the lower sample 207, a sintered bar of the same material is used as the upper sample 206, and the reflecting mirror 201 is moved by the reflecting mirror feeding mechanism 224. The crystal is grown on the seed crystal by gradually moving the seed crystal upward, resulting in the melting zone 208 gradually moving upward.
結晶成長の終了時には、上側試料の位置を上方
に引き上げて熔融域部で上側試料と下側試料とを
分離し、冷却するのを持つて開閉反射鏡を開き、
装着時とは逆の要領で炉心管および試料を取り外
す。 At the end of crystal growth, the upper sample is pulled upwards, the upper sample and the lower sample are separated in the melting zone, and the opening and closing reflector is opened by holding them for cooling.
Remove the reactor core tube and sample in the reverse order of installation.
本発明ではこのような構造になつているため、
上シヤフトおよび下シヤフトは炉心管が装着され
る空間をあけるだけの移動量を持てば良く、上シ
ヤフトと下シヤフトの移動量の和は炉心管の長さ
Lに装着代と若干の余裕を加えた値で済む。 Since the present invention has such a structure,
The upper and lower shafts only need to have enough movement to create space for the core tube to be installed, and the sum of the movement of the upper and lower shafts is the length L of the core tube plus the installation allowance and some margin. The value is sufficient.
従つて装置の高さは、第3図の上シヤフトから
下シヤフトまでの全長S2に炉心管の長さLと若干
の装着代α1と余裕α2を加えた高さH2=S2+L+
α1+α2で済み、従来の場合に比べ格段に低くでき
る。例えば炉心管の高さを160mmとしたときに従
来装置に比べて750mm程度は高さを低くできる。 Therefore, the height of the device is the total length S 2 from the upper shaft to the lower shaft in Figure 3, the length L of the reactor core tube, a slight installation allowance α 1 and a margin α 2 , which is the height H 2 = S 2 +L+
It only requires α 1 + α 2 , which is much lower than in the conventional case. For example, when the height of the reactor core tube is 160 mm, the height can be reduced by about 750 mm compared to conventional equipment.
更に上下シヤフトの移動操作は全て装置正面の
スイツチ(図示せず)ででき、試料の着脱および
炉心管の着脱も全てが開かれた反射鏡の開口窓か
ら行うことができるため、試料及び炉心管の着脱
に伴う作業は全て装置正面の作業性のよい高さで
行うことができ、従来のように低い位置や高い位
置での無理な作業姿勢をとる必要がない。 Furthermore, all operations for moving the upper and lower shafts can be performed using a switch (not shown) on the front of the device, and loading and unloading of the sample and the reactor core tube can all be performed through the opening window of the open reflector. All the work involved in attaching and detaching can be done at a convenient height in front of the device, and there is no need to take an unreasonable working posture at a low or high position unlike in the past.
更に炉心管の固定作業は、炉心管ホルダのレバ
ーのあげおろしだけであるから従来のねじ締めに
よる炉心管固定作業に比べ非常に簡単であり、作
業性がよい。 Furthermore, since the work of fixing the reactor core tube is only by raising and lowering the lever of the reactor core tube holder, it is much simpler and more efficient than the conventional fixing work of the reactor core tube by tightening screws.
以上述べたように、本発明を実施することによ
り、装置高さを著るしく低くでき、しかも炉心管
の着脱操作が簡単になる上に着脱の全操作が装置
正面の作業姿勢の良い場所で行なえるため、作業
性が著るしく向上するまでの利点を生ずる。 As described above, by implementing the present invention, the height of the equipment can be significantly reduced, and the operation of attaching and detaching the reactor core tube is simplified, and all attachment and detachment operations can be performed at a location in front of the equipment with a good working posture. This has the advantage of significantly improving work efficiency.
なおここでは単楕円型の輻射線加熱装置につい
て説明したが、本発明は双楕円型および多楕円型
の輻射線加熱装置についても勿論適用できる。 Although a single elliptical radiation heating device has been described here, the present invention is of course applicable to bielliptic and polyelliptic radiation heating devices.
第5図は本発明を双楕円型輻射線加熱装置につ
いて実施した場合の同装置の反射鏡の周辺を示す
断面図であり、301は反射鏡、302はF1″,
F2″を焦点とする回転楕円体で形成される反射鏡
面、303はF2″,F3″を焦点とする回転楕円体で
形成される反射鏡面、304は固定反射鏡、30
5は開閉可能な開閉反射鏡、306は上側試料、
307は下側試料、308は熔融域、309は炉
心管、310は炉心管ホルダ、311は上シヤフ
ト、312は下シヤフト、313,314は熱光
源ランプであり、これらの機能および動作は全て
第3図の実施例と同じである。 FIG. 5 is a sectional view showing the periphery of a reflecting mirror of a bielliptic radiation heating device in which the present invention is applied, where 301 is a reflecting mirror, 302 is F 1 ″,
303 is a reflecting mirror surface formed by a spheroid with focal points F 2 ' ' and F 3 ''; 304 is a fixed reflecting mirror;
5 is an openable/closeable reflector, 306 is an upper sample,
307 is a lower sample, 308 is a melting zone, 309 is a furnace tube, 310 is a furnace tube holder, 311 is an upper shaft, 312 is a lower shaft, and 313 and 314 are thermal light source lamps. This is the same as the embodiment shown in FIG.
なお実施例の説明中で述べた熱光源ランプ20
5,313,314は、ハロゲンランプ、キセノ
ンランプ、水銀ランプ、タングステンランプな
ど、熱輻射線を発生するものであれば良い。 Note that the thermal light source lamp 20 mentioned in the description of the embodiment
5, 313, and 314 may be any lamp that generates thermal radiation, such as a halogen lamp, a xenon lamp, a mercury lamp, or a tungsten lamp.
更に以上の説明では輻射線加熱装置をフローテ
イングゾーン方式の結晶成長に適用した場合につ
いて説明したが、本発明を実施した輻射線加熱装
置はフローテイングゾーン法以外の結晶成長(例
えばエピタキシヤル成長など)にも使用できるし
試料の熔解、試料の加熱などにも勿論使用でき
る。 Furthermore, in the above explanation, the case where the radiation heating apparatus is applied to crystal growth using the floating zone method has been explained, but the radiation heating apparatus according to the present invention can be used for crystal growth other than the floating zone method (for example, epitaxial growth, etc.). ), and of course can also be used for melting samples, heating samples, etc.
第1図は単楕円型の輻射線加熱装置の従来例の
主要部を断面にした部分側面図で、第2図は第1
図の従来例における炉心管の着脱操作を示す主要
部を断面にした部分側面図、第3図は本発明の1
実施例を示す単楕円型の輻射線加熱装置の主要部
を断面にした側面図で、第4図は第3図の実施例
における炉心管の着脱操作を示した一部を断面に
した側面図であり、第5図は本発明の他の1実施
例を示す双楕円型輻射線加熱装置の主要部の断面
図である。
図において、101,201,301は反射
鏡、202,302は回転楕円反射鏡面、10
4,204,305は開閉反射鏡、105,20
5,313,314は熱光源、106,206,
306は上側試料、107,207,307は下
側試料、108,208,308は熔融域、10
9,209,309は炉心管、213,310は
炉心管ホルダ、216,311は上シヤフト、2
20,312は下シヤフト、223はメインフレ
ーム、224は反射鏡送り機構、225は上シヤ
フト送り機構、226は下シヤフト送り機構、で
ある。
Figure 1 is a partial side view of the main part of a conventional example of a single elliptical radiation heating device, and Figure 2 is a partial side view of the main part of a conventional single elliptical radiation heating device.
Figure 3 is a partial side view showing the attachment and detachment operation of the reactor core tube in the conventional example, with the main part cut away;
FIG. 4 is a side view showing a cross-section of the main part of a single elliptical radiation heating device showing an embodiment, and FIG. FIG. 5 is a sectional view of the main parts of a bielliptic radiation heating device showing another embodiment of the present invention. In the figure, 101, 201, 301 are reflecting mirrors, 202, 302 are spheroidal reflecting mirror surfaces, 10
4,204,305 is an opening/closing reflector, 105,20
5,313,314 are thermal light sources, 106,206,
306 is the upper sample, 107, 207, 307 is the lower sample, 108, 208, 308 is the melting area, 10
9, 209, 309 are the core tubes, 213, 310 are the core tube holders, 216, 311 are the upper shafts, 2
20 and 312 are lower shafts, 223 is a main frame, 224 is a reflecting mirror feeding mechanism, 225 is an upper shaft feeding mechanism, and 226 is a lower shaft feeding mechanism.
Claims (1)
鏡の一方の焦点に熱光源ランプを配し、他の一方
の焦点に配した試料にも光を集中して加熱する輻
射線加熱装置において、開閉可能な反射鏡を開い
た時に生ずる反射鏡の開口窓から挿入できる大き
さの炉心管が炉心管ホルダによつて反射鏡内にシ
ヤフトの軸方向に押圧挟持され、更に試料を装着
した上シヤフト及び下シヤフトが試料を装着した
まま上と下の試料位置が炉心管の装着されるべき
空間から外れた高さになるように移動可能な送り
機構を有する、ことを特徴とする輻射線加熱装
置。1. In a radiation heating device in which a thermal light source lamp is placed at one focus of a reflecting mirror consisting of one or more spheroidal surfaces, and the sample placed at the other focus is also heated by concentrating the light, A reactor core tube of a size that can be inserted through the opening window of the reflector that is created when the openable reflector is opened is pressed and held in the axial direction of the shaft inside the reflector by a reactor core tube holder, and the upper shaft with the sample mounted thereon. and a radiation heating device characterized in that the lower shaft is movable with the sample attached so that the upper and lower sample positions are at a height out of the space in which the reactor core tube is to be attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8140881A JPS57196490A (en) | 1981-05-28 | 1981-05-28 | Radiation heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8140881A JPS57196490A (en) | 1981-05-28 | 1981-05-28 | Radiation heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196490A JPS57196490A (en) | 1982-12-02 |
| JPH0161238B2 true JPH0161238B2 (en) | 1989-12-27 |
Family
ID=13745499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8140881A Granted JPS57196490A (en) | 1981-05-28 | 1981-05-28 | Radiation heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196490A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60191898U (en) * | 1984-05-31 | 1985-12-19 | 株式会社サーモ理工 | Radiant heating device |
-
1981
- 1981-05-28 JP JP8140881A patent/JPS57196490A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57196490A (en) | 1982-12-02 |
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