Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0212729B2 - - Google Patents
[go: Go Back, main page]

JPH0212729B2 - - Google Patents

Info

Publication number
JPH0212729B2
JPH0212729B2 JP59229356A JP22935684A JPH0212729B2 JP H0212729 B2 JPH0212729 B2 JP H0212729B2 JP 59229356 A JP59229356 A JP 59229356A JP 22935684 A JP22935684 A JP 22935684A JP H0212729 B2 JPH0212729 B2 JP H0212729B2
Authority
JP
Japan
Prior art keywords
grindstone
cut
columnar material
cutting blade
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59229356A
Other languages
Japanese (ja)
Other versions
JPS61106207A (en
Inventor
Susumu Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP22935684A priority Critical patent/JPS61106207A/en
Publication of JPS61106207A publication Critical patent/JPS61106207A/en
Publication of JPH0212729B2 publication Critical patent/JPH0212729B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003Multipurpose machines; Equipment therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 この発明は半導体等の製造工程において、柱状
体の材料を薄片状のウエハーに切断するウエハー
の製造方法並びに装置に係るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer manufacturing method and apparatus for cutting columnar material into flaky wafers in the manufacturing process of semiconductors and the like.

従来、シリコン等の材料(インゴツトという)
をウエハーに切断するには、主として高速回転す
る内周刃に、インゴツトを押し付ける方法によつ
ていたが、切断刃の保持方法、両刃面の切断性能
のアンバランス、クーラント、風圧の不均一等の
原因により切断面の平面度、従つて切断されたウ
エハーの面精度を上げることが困難であつた。特
に近来、生産効率を向上させるためにインゴツト
の径を大きくする、いわゆる、大口径化の技術的
要請が強いが、大口径化する程。これに伴つてウ
エハーの両面のそり(平面度誤差)が大となる点
が問題になつてきている。また、ウエハーのそり
が大きく、面精度が悪いと、後工程の研削、ラツ
ピング加工における修正、仕上げに多大の工数と
経費と有し、必ずしも満足な面精度が得られなか
つた。
Traditionally, materials such as silicon (called ingots)
In order to cut into wafers, the ingot was mainly pressed against a high-speed rotating internal blade, but there were problems such as the method of holding the cutting blade, imbalance in cutting performance between the two blade surfaces, unevenness in coolant, wind pressure, etc. Due to these reasons, it has been difficult to improve the flatness of the cut surface and, therefore, the surface precision of the cut wafer. Especially in recent years, there has been a strong technical demand for increasing the diameter of ingots in order to improve production efficiency, so-called large-diameter ingots. As a result, warpage (flatness error) on both sides of the wafer becomes large, which has become a problem. Further, if the wafer has a large warpage and the surface precision is poor, a large amount of man-hours and expense are required for post-process grinding, correction in the wrapping process, and finishing, and a satisfactory surface precision cannot always be obtained.

本発明は、少なくともウエハーの片面の平面度
を飛躍的に改善する方法並びに装置を提供するも
のである。
The present invention provides a method and apparatus for dramatically improving the flatness of at least one side of a wafer.

本発明は、インゴツトからウエハーを切断する
スライシング機の切断機能にインゴツトの端面を
平面研削する機能を付加し、即ち、1台の機械で
切断加工とインゴツトの端面研削加工を行い、切
断されたウエハーの片面の平面度を高精度に仕上
げることを可能とするもので、インゴツトの端面
研削は、切断と同時に進行してもよいし、また
は、端面研削と切断とを交互に行つてもよい。
The present invention adds a function of surface grinding the end face of the ingot to the cutting function of a slicing machine that cuts wafers from the ingot. In other words, the cutting process and the end face grinding process of the ingot are performed in one machine, and the cut wafer is The flatness of one side of the ingot can be finished with high precision, and the end face grinding of the ingot may proceed simultaneously with cutting, or the end face grinding and cutting may be performed alternately.

以下、本発明の方法並びに装置の実施例を図面
を参照に説明する。第1図に、内周刃のブレード
を中空スピンドルに取付けた横型スライシング機
に適用した第1実施例を示す。図において、イン
ゴツト1は、中空スピンドル3に取付けられ、高
速回転する内周刃のブレード2に対して図示しな
い保持機構、送り機構により、矢印A方向に移動
して薄片状のウエハーに切断される。図に於い
て、横型スライシング機に於いて、内周刃のブレ
ード2は高速回転する中空スピンドル3に張設さ
れ、高速回転される。インゴツト1は図示しない
保持機構、送り機構により、矢印A方向に移動し
て薄片状のウエハーに切断される。一方、横型ス
ライシング機の同一機上の中空スピンドル3内に
砥石軸5Aが配置され、砥石軸5Aの先端に砥石
5が設けられる。ウエハー切断時インゴツト1の
端面4に対して、平面研削用の回転する砥石5を
当て、インゴツト1を矢印A方向に移動させる
と、まず端面4が砥石5によつて研削され、次に
ブレード2がインゴツト1に切り込んでウエハー
に切断する。
Embodiments of the method and apparatus of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment in which the present invention is applied to a horizontal slicing machine in which an inner peripheral blade is attached to a hollow spindle. In the figure, an ingot 1 is attached to a hollow spindle 3, and is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) against a blade 2 of an internal cutting edge that rotates at high speed, and is cut into thin wafers. . In the figure, in a horizontal slicing machine, a blade 2 of an inner circumferential cutter is stretched around a hollow spindle 3 that rotates at a high speed, and is rotated at a high speed. The ingot 1 is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) and cut into thin wafers. On the other hand, a grindstone shaft 5A is disposed within a hollow spindle 3 on the same horizontal slicing machine, and a grindstone 5 is provided at the tip of the grindstone shaft 5A. When cutting a wafer, a rotating grindstone 5 for surface grinding is applied to the end surface 4 of the ingot 1, and when the ingot 1 is moved in the direction of arrow A, the end surface 4 is first ground by the grindstone 5, and then the blade 2 cuts into ingot 1 and cuts it into wafers.

その際、切断されるウエハーに欠けや割れやひ
びが生じないように、砥石5で研削されている部
分にはブレード2の切り込み先端が達しないよう
にブレード2と砥石5を配設する。即ち、砥石5
による柱状体端面の研削位置は、ブレード2によ
る柱状体の切込み位置より先行させ、ブレード2
による柱状体の切込み位置は柱状体端面の研削位
置より常に遅れてなされる。端面研削が終了した
所で砥石5は後退(図では右方向に移動)し、イ
ンゴツト1も原位置に復帰して次の加工サイクル
に入る。この方式では、インゴツト1の端面研削
と切断が並行して、ほぼ同時に行えるので、ロス
時間がなく、極めて能率的である。
At this time, the blade 2 and the grindstone 5 are arranged so that the tip of the cut of the blade 2 does not reach the part being ground by the grindstone 5 so as not to chip, crack, or crack the wafer to be cut. That is, grindstone 5
The grinding position of the end face of the columnar body is made to precede the cutting position of the columnar body by blade 2, and
The cutting position of the columnar body is always delayed from the position of grinding the end face of the columnar body. When the end face grinding is completed, the grinding wheel 5 moves backward (moves to the right in the figure), and the ingot 1 also returns to its original position to begin the next processing cycle. In this method, the end face grinding and cutting of the ingot 1 can be performed in parallel and almost simultaneously, so there is no loss of time and it is extremely efficient.

上記実施例は、ブレード2に対して、左右にイ
ンゴツト端面研削機能と、インゴツトの保持機構
とを設けることができる中空スピンドル3を用い
た場合の例である。しかし、第2図に示すよう
に、回転する椀形保持体7にブレード6が取付け
られる方式、即ち、非中空スピンドル方式では椀
形保持体7の内部には、砥石と砥石軸を設けるこ
とができない。従つて、このときには、横型スラ
イシングの同一機上で、ブレード6の椀形保持体
7の側方に近接して端面研削用砥石8をインゴツ
ト1の端面方向に向けて設け、インゴツト1の移
動機構の移動ストロークを大きくして、切断加工
の直前に、インゴツト1を、第2図の1点鎖線で
示すように砥石8の位置に移動させて、端面研削
を行い、インゴツト1を矢印D、C、Bと移動さ
せ、ブレード6の中央開口部に送り込み、矢印A
方向の送りによりブレード6が切り込んでウエハ
ー切断を行う。この方式は、加工に若干の余分な
時間を要するが、第1実施例とほぼ同等の成果が
得られる。
The above embodiment is an example in which a hollow spindle 3 is used which can provide the blade 2 with an ingot end face grinding function and an ingot holding mechanism on the left and right sides. However, as shown in FIG. 2, in a method in which the blade 6 is attached to a rotating bowl-shaped holder 7, that is, a non-hollow spindle method, a grindstone and a grindstone shaft cannot be provided inside the bowl-shaped holder 7. Can not. Therefore, at this time, on the same machine for horizontal slicing, an end face grinding wheel 8 is provided close to the side of the bowl-shaped holder 7 of the blade 6, facing toward the end face of the ingot 1, and the ingot 1 moving mechanism is Immediately before the cutting process, the ingot 1 is moved to the position of the grindstone 8 as shown by the dashed line in FIG. , B, feed it into the central opening of the blade 6, and move it as shown by the arrow A.
The blade 6 cuts into the wafer by feeding the wafer in the same direction. Although this method requires a little extra time for processing, it can achieve almost the same results as the first embodiment.

以上2つの実施態様を示したが、本発明の方法
並びに装置は、この実施例に限らず、縦型形式ま
たは外周刃方式のスライシング機にも適用するこ
とができる。
Although the two embodiments have been described above, the method and apparatus of the present invention are not limited to these embodiments, but can also be applied to vertical type or peripheral blade type slicing machines.

以上詳述したように、本発明を採用することに
より、同一機上で、端面研削機構を付加する以外
は、すべてスライシング機の機構を利用して、イ
ンゴツトと取付け等の段取り替えを要せず、切断
加工と並行して、または切断加工サイクル中に、
インゴツトの端面を高精度に研削することが可能
となる。従つて、インゴツト端面の平面度の測定
管理が不要となり、切断されたウエハーの品質、
即ち、片面の平面度を飛躍的に向上させることが
できる。また、後工程の工数、経費等が著しく削
減され、生産性を高めることができる等多大の効
果が得られる。
As detailed above, by adopting the present invention, all the mechanisms of the slicing machine are used on the same machine, except for adding the end face grinding mechanism, and there is no need for setup changes such as ingot and mounting. , in parallel with the cutting process or during the cutting process cycle.
It becomes possible to grind the end face of the ingot with high precision. Therefore, it is no longer necessary to measure and manage the flatness of the ingot end face, and the quality of the cut wafers can be improved.
That is, the flatness of one side can be dramatically improved. In addition, the number of man-hours and costs of post-processing can be significantly reduced, productivity can be increased, and other great effects can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例の機構説明図、第2図
は他の実施例を示す機構説明図。 1……インゴツト、2,6……ブレード、4…
…端面、5,8……端面研削砥石。
FIG. 1 is a mechanism explanatory diagram of an embodiment of the present invention, and FIG. 2 is a mechanism explanatory diagram showing another embodiment. 1...Ingot, 2, 6...Blade, 4...
...End face, 5, 8... End face grinding wheel.

Claims (1)

【特許請求の範囲】 1 回転するスピンドルに切断刃を取付けて柱状
体材料を薄片状に切断するウエハー製造装置に於
いて、前記切断刃の近傍に回転する砥石軸を取付
け、切断された柱状体材料の端面を研削する砥石
を前記砥石軸の先端に取付けたことを特徴とする
ウエハー製造装置。 2 前記スピンドルは中空に形成された中空スピ
ンドルであり、前記切断刃は前記中空スピンドル
に支持され、前記砥石は前記中空スピンドル内に
位置すると共に柱状体材料の端面と対向する位置
に配置されることを特徴とする特許請求の範囲1
のウエハー製造装置。 3 前記砥石は前記スピンドルの外側に近接して
配置され、前記切断刃で柱状体材料を薄片状に切
断する工程と、切断された前記柱状体材料を前記
砥石の位置まで移動して前記端面を研削する工程
と、から成ることを特徴とする特許請求の範囲1
のウエハー製造装置。 4 回転するスピンドルに切断刃を取付けて柱状
体材料を薄片状に切断するウエハー製造装置に於
いて、前記切断刃の近傍に取付けられた先端に砥
石を有する砥石軸を回転することにより、切断さ
れた柱状体材料の端面を研削することを特徴とす
るウエハー製造方法。 5 中空に形成されたスピンドル内に位置した前
記砥石による柱状体材料の端面の研削位置を前記
柱状体材料の前記切断刃の切込み位置より先行さ
せた状態で、前記研削する工程と前記切断する工
程とを同時に行うことを特徴とする特許請求の範
囲4のウエハー製造方法。 6 前記切断刃で柱状体材料を薄片状に切断し、
前記切断された柱状体材料を前記スピンドルの外
側に近接して配置された前記砥石の位置まで移動
して前記端面を研削することを特徴とする特許請
求の範囲4のウエハー製造方法。
[Scope of Claims] 1. In a wafer manufacturing apparatus in which a cutting blade is attached to a rotating spindle to cut a columnar material into thin pieces, a rotating grindstone shaft is attached near the cutting blade and the cut columnar material is cut into thin pieces. A wafer manufacturing apparatus characterized in that a grindstone for grinding an end face of a material is attached to the tip of the grindstone shaft. 2. The spindle is a hollow spindle formed hollow, the cutting blade is supported by the hollow spindle, and the grindstone is located within the hollow spindle and at a position facing an end surface of the columnar material. Claim 1 characterized by
wafer manufacturing equipment. 3. The grindstone is disposed close to the outside of the spindle, and the steps include cutting the columnar material into thin pieces with the cutting blade, and moving the cut columnar material to the position of the grindstone to cut the end surface. Claim 1, characterized in that it consists of a step of grinding.
wafer manufacturing equipment. 4. In a wafer manufacturing apparatus in which a cutting blade is attached to a rotating spindle to cut a columnar material into thin pieces, the cutting blade is cut by rotating a grindstone shaft having a grindstone at the tip attached near the cutting blade. A wafer manufacturing method characterized by grinding an end face of a columnar material. 5. The step of grinding and the step of cutting in a state where the grinding position of the end face of the columnar material by the grindstone located in the spindle formed in the hollow is in advance of the cutting position of the cutting blade of the columnar material. The wafer manufacturing method according to claim 4, characterized in that the above steps are carried out at the same time. 6 Cutting the columnar material into thin pieces with the cutting blade;
5. The wafer manufacturing method according to claim 4, wherein the cut columnar material is moved to a position of the grindstone disposed close to the outside of the spindle to grind the end surface.
JP22935684A 1984-10-31 1984-10-31 Manufacture of wafer Granted JPS61106207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22935684A JPS61106207A (en) 1984-10-31 1984-10-31 Manufacture of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22935684A JPS61106207A (en) 1984-10-31 1984-10-31 Manufacture of wafer

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP3018086A Division JP2537573B2 (en) 1991-02-08 1991-02-08 Semiconductor wafer-manufacturing method
JP3018085A Division JPH0613173B2 (en) 1991-02-08 1991-02-08 Wafer manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS61106207A JPS61106207A (en) 1986-05-24
JPH0212729B2 true JPH0212729B2 (en) 1990-03-26

Family

ID=16890879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22935684A Granted JPS61106207A (en) 1984-10-31 1984-10-31 Manufacture of wafer

Country Status (1)

Country Link
JP (1) JPS61106207A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0750972A1 (en) * 1995-06-30 1997-01-02 Tokyo Seimitsu Co.,Ltd. Ingot slicing machine with built-in grinder

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6296400A (en) * 1985-10-23 1987-05-02 Mitsubishi Metal Corp Production of wafer
JPH0661681B2 (en) * 1987-07-06 1994-08-17 三菱マテリアル株式会社 Mirror surface wafer manufacturing method
EP0534499A3 (en) * 1987-10-29 1993-04-21 Tokyo Seimitsu Co.,Ltd. Method for slicing a wafer
JP2737783B2 (en) * 1988-02-18 1998-04-08 株式会社 東京精密 Wafer cutting equipment
US5218948A (en) * 1988-03-11 1993-06-15 Mitsubishi Kinzoku Kabushiki Kaisha Inside diameter blade
JPH01138565U (en) * 1988-03-11 1989-09-21
US5111622A (en) * 1989-05-18 1992-05-12 Silicon Technology Corporation Slicing and grinding system for a wafer slicing machine
DE4136566C1 (en) * 1991-11-07 1993-04-22 Gmn Georg Mueller Nuernberg Ag, 8500 Nuernberg, De

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2382257A (en) * 1943-04-21 1945-08-14 Albert Ramsay Manufacture of piezoelectric oscillator blanks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0750972A1 (en) * 1995-06-30 1997-01-02 Tokyo Seimitsu Co.,Ltd. Ingot slicing machine with built-in grinder

Also Published As

Publication number Publication date
JPS61106207A (en) 1986-05-24

Similar Documents

Publication Publication Date Title
US4344260A (en) Method for precision shaping of wafer materials
US4896459A (en) Apparatus for manufacturing thin wafers of hard, non-metallic material such as for use as semiconductor substrates
JP2011255454A5 (en)
JP3328193B2 (en) Method for manufacturing semiconductor wafer
JPH0212729B2 (en)
JP3848779B2 (en) Internal grinding machine
JPS63120065A (en) Brush seal machining method and device
JP2537573B2 (en) Semiconductor wafer-manufacturing method
JPH04211907A (en) Manufacturing device of wafer
JP2007044853A (en) Method and apparatus for chamfering wafer
JPH05318294A (en) Si wafer grinding method
JPS61114813A (en) Cutting method
JP3365439B2 (en) Grinding equipment
JP7398852B1 (en) Semiconductor crystal wafer manufacturing equipment and manufacturing method
JP7429080B1 (en) Semiconductor crystal wafer manufacturing equipment and manufacturing method
GB2116085A (en) Grinding machine and method of grinding a workpiece
JP2908915B2 (en) Wafer cutting method and apparatus
JP2865773B2 (en) Wafer cutting equipment
JP3510648B2 (en) Grinding method
JP2002144199A (en) Surface grinding method and surface grinding machine for sheet disc-like workpiece
JPS62224537A (en) Composite working machine for manufacture of thin base plate
JPH079313A (en) Compound grinder
JP2001310247A (en) Grinding method of rotating work
JP2762200B2 (en) Wafer Chamfer Polishing Buff Form Grooving Machine
JPH0615634A (en) Slicing method of wafer

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees