JPH0212884B2 - - Google Patents
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- Publication number
- JPH0212884B2 JPH0212884B2 JP11168882A JP11168882A JPH0212884B2 JP H0212884 B2 JPH0212884 B2 JP H0212884B2 JP 11168882 A JP11168882 A JP 11168882A JP 11168882 A JP11168882 A JP 11168882A JP H0212884 B2 JPH0212884 B2 JP H0212884B2
- Authority
- JP
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- Prior art keywords
- temperature
- reaction
- pressure
- hfo
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 claims description 33
- 239000000843 powder Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000047 product Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 238000012545 processing Methods 0.000 description 10
- 241000588731 Hafnia Species 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000013067 intermediate product Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002775 capsule Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002362 hafnium Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Description
【発明の詳細な説明】
本発明は従来方法では殆んど得ることのできな
かつたハフニウム酸化物(HfO2)(以下ハフニア
と称する)の超微粉末を確実に而も微粉末度とそ
の範囲を略々意図の如く制御して、高純度のもの
を得ることのできる方法に関する。
従来ハフニウム酸化物の微粉末を得るには一般
的に金属酸化物の微粉粒子の製造方法によつてい
た。即ちこれらの従来方法を大別すると機械的、
化学的、物理的などの方法に分類することができ
るが、一方最近の技術の高度化からの材料に対す
る要請として超微粉であると同時に高純度かつ均
質性も満足させる必要がある。しかし微粉砕或は
磨砕などの機械的方法によるときは或一定以下例
えば10μm(100000Å)以下位になると微粒子の
凝集が起るのでそれ以下の微粉末は殆んど得るこ
とができず、その上粉砕媒体或は磨砕機の材料の
微粒子の混合により前記高純度を保つことはでき
ない。
次に化学的方法としては、ハフニウム塩を直接
あるいはその溶液から沈澱させた水酸化物を加熱
分解して酸化物とする方法がある。この方法によ
る微粒子は出発原料の塩や沈澱剤に含まれる成分
を不純物として含有する欠点がある。特に微粒子
を得る目的で熱分解温度を低温にした場合は残存
不純物量が多く、またこれを除くために高温に加
熱すれば粒成長が起こつて大粒子となつてしま
う。したがつてこのような熱分解法では高純度な
超微粉末を得ることは殆んどできない。
次に物理的方法として金属そのものを揮発させ
酸化させた後凝結させる方法があるがHfの場合
は沸点が3200℃と高いので非常に困難であり冷却
すると凝集する粒子が多いので、矢張り超微粒子
を製造することはできない。結局以上略述した従
来技術によつて得られる高純度ハフニア酸化物微
粒子の大きさは最小のもので500Å止りであり、
かつばらつきの範囲も50000〜500Åと非常に広い
ものであり、而も作業者の意思でその範囲を自由
に調節することは全くできなかつた。さらに微粒
子程不純物を含みやすい欠点も有している。
しかしながら一般に緻密なセラミツクスを得る
には微粒子或は超微粒子程良く、センサー其の他
の電子材料或は精密機械工具などもより細かい粒
子の材料を使用しなければ高性能のものができな
い。また反対に粗粒子が混じて居り或は粉末度分
布も不均一であると製品セラミツクスの機械的強
度も弱くまた透光性絶縁性なども良くないなど品
質的に良いものが得られない。ハフニアを原料と
するセラミツクスについても同様であり、前記従
来の微粒子度水準ではまだまだ不充分である。
本発明は前記従来技術の不足の諸点を補うもの
で、水分の存在において以下に詳説するような特
定範囲の高温高圧下でハフニウムを処理し、未だ
かつて得られたことのない高純度ハフニアの超微
粉末を得ることのできる方法であり、而も該超微
粉末の程度とその微粉末の程度とその範囲を可成
自由に制御し得る暫新な方法をも開発し得たの
で、学会に発表すると共に、こゝに更に開示し提
供するものである。
本発明者等は多くの基礎実験の結果から、ハフ
ニウムは高温高圧水下においては、次の3段階の
反応によつてハフニアとなることを推定すること
ができた。即ち
第1段階の反応 Hf+2H2O→HfO2+2H2
〔HF表面におけるHFO2皮膜の生成〕
第2段階の反応 Hf+x/2H2→HfHx
第3段階の反応 HfHx+O2→HfO2+x/2H2
である。この反応過程において、生成したH2が
Hf金属と反応する第2段階の反応が微粉化を促
進することが考えられた。そこで更に多くの実験
を重ねた結果、高純度のハフニア(HfO2)を超
微粉末で得る方法を創り出すことができた。その
条件は先ず前記3段階の反応より、重量比でハフ
ニウム(Hf)1モルに対し2モル以上の水
(H2O)を存在させることが必要であり、更に多
くの実験より温度条件としては300℃未満では反
応が全く起らないことが判明したので、300℃以
上でなければならず、また1300℃を超えると実施
が難しく困難になると共に粒子が大きくなつて来
ることがわかつたので1300℃以下でなければなら
ない。
次に圧力条件としては0.1MPa(約1気圧)未満
では殆んど反応せず、1000MPa(約10000気圧)
を超えると殆んど実施不能になつて了うので、該
反応が可能の範囲としては0.1MPa以上1000MPa
以下であることが必要となる。
更に時間的要因については温度、圧力が或程度
高ければ直ちに反応が完成するので、時間的要件
としては特に必要ではない。これら上記の諸条件
については後に実施例において詳記し更に図示に
よつても詳細説明する通りである。
而してこれらの条件における超微粉末ハフニア
の具体的生産手段については、試験的規模ではあ
るが、下記の如きものである。
而してこれらの条件における超微粉末ハフニア
の生産手段は、金属ハフニウム(Hf)を前記説
明した割合の高純度水と共に耐熱耐圧容器中で加
熱することである。この場合、容器は前記条件の
高温高圧水あるいはハフニウムと反応しない材質
および形状(例えばテストチユーブ型高温高圧容
器など)であれば良いが大型のオートクレーブな
どを用いることもできる。高温高圧容器が水に侵
食されることなどによる生成物の汚染が問題にな
る場合は、白金などによるカプセルを用いれば生
成物を容器から隔離することが可能であり、さら
にカプセルを熔接などにより密閉すれば内部は高
純度水とHf金属のみとなり全く不純物の混入す
る余地が無くなる。
また金属ハフニウムは水や水素との反応によつ
て化学的に微細化されるので、出発原料として用
いるハフニウムは形状、大きさ、粒径などに制限
を受けないのも本発明の特色の一つである。
白金カプセル内にHf細片と高純度水(再蒸留
水)を封入しテストチユーブ型容器で反応させる
場合反応温度圧力は、前記の如く、温度300〜
1300℃圧力0.1MPa〜1000MPaの範囲で多くの組
み合わせ方法があり得るが、例えば圧力を
100MPa(約1000Kg/cm2)とすれば、温度は300℃
から反応を始め約600℃までの間は未反応物が存
在し、600℃を超えると殆んどHfO2に変り、700
℃を超えれば全部がHfO2になる。また温度を約
500℃位にしておくと圧力の方は0.1MPa以上とな
れば反応し始め150MPa前後で殆んどHfO2に変
り170MPaを超えれば全部がHfO2になるまた時
間については圧力と温度が高ければ殆んど直ちに
反応するが、例えば温度が500℃圧力が100MPa
のところでは30時間で大部分が、120時間で全部
がHfO2となる。反応が完結した頃合を見計らつ
て徐々に温度と圧力を下げ、HfO2を取出し100℃
前後の温度で乾燥する。生成物は一見凝集してい
るように見える場合もあるが、軽く動かすと全体
としてさらさらとした超微粉末が得られる。本発
明方法で得られた微粉末度は顕微鏡によつて観察
すると、従来技術による最下限500Åを遥かに下
廻り最小粒径は約100Åで、通常前記程度の圧力、
温度条件で平均200Å最大400Åの範囲にある。
更にまた反応の温度、圧力、時間の選び方によ
つて、生成物の平均粒径と範囲を相当自由に制御
することができる。例えば反応温度を下げて反応
圧力を高めれば生成HfO2の平均粒径は下り即ち
微粉末度は上り、逆に反応温度を上げて反応圧力
を下げることにより、該平均粒径を比較的大きく
即ち微粉末度を下げることができる。
以上のように本発明方法によれば、従来技術で
は全く得ることのできなかつた500Å以下の高純
度ハフニア(HfO2)の超微粉末を100Åまでの範
囲で得ることができ、而もその平均粒径を生産者
が自由に制御して製造しうるという画期的な新規
方法をも提供し得たといえる。またこれによつて
電子工業材料或は精密加工、工作機械に用いる一
段と進歩した材料を提供し得ることが可能となつ
たのである。
実施例 1
Hfと高温高圧水との反応実験は、白金カプセ
ルに平均の大きさ1×0.2×0.02mmのHf金属片と
再蒸溜水をH2O/Hf=2:1のモル比で封入し、
それをテストチユーブ型圧力容器に入れ、温度
300〜700℃の範囲にて加熱して行つた。その時の
圧力及び時間はそれぞれ25MPa〜150MPa及び
3h〜120hの範囲である。又同様の実験条件のも
とに、開放系における実験を行つた。生成物は走
査型電子顕微鏡(SEM)及びX線粉末回折装置
を用いて検討した。又生成物の定量は一部X線粉
末図形一致法を用いて行つた。
生成物は未反応Hf金属、Hf水素化物及びHfO2
より成る。密封系の実験によつて得られた生成物
の量比の温度、圧力及び時間に対する変化を第1
図乃至第3図に示す。これらより、HfO2生成の
反応が600℃以上で活発になること、圧力75MPa
以下では急激に反応速度が下がること、及び500
℃においても長時間の加熱によつて反応を完全に
進行させ得ること等が明らかになつた。又開放系
における実験では密封系に比べ、反応は500℃で
は遅く、600℃では逆に早く進行することが明ら
かとなつた。
尚第1図は圧力を100MPaとし反応温度を変化
させた場合の中間生成物HfHx及びHfO2を生成
させ得る条件範囲図の例であり、第2図は反応温
度を500℃とし反応圧力を変化させた場合の同様
物を生成させ得る条件範囲図で、また第3図は、
圧力を100MPaとし温度を500℃とした場合の反
応時間に対する同様目的物、中間生成物の生成条
件範囲図である。
実施例 2
実施例1と同様な耐高温高圧容器等を用い、ま
た同様の材料を使用して、処理温度を下げ、処理
圧力を上げることにより微粉末度を上げた目的物
を、また逆の方法により微粉末度を下げた目的物
ハフニアを得ることができる。第1表にその例を
示す。
【表】Detailed Description of the Invention The present invention reliably produces ultrafine powder of hafnium oxide (HfO 2 ) (hereinafter referred to as hafnia), which could hardly be obtained by conventional methods, and also improves the fineness and its range. The present invention relates to a method that can obtain highly pure products by controlling substantially as intended. Conventionally, fine powder of hafnium oxide has generally been obtained by a method for producing fine powder particles of metal oxide. In other words, these conventional methods can be roughly divided into mechanical,
It can be classified into chemical, physical, etc. methods, but on the other hand, due to the recent advances in technology, it is necessary for materials to satisfy not only ultrafine powder but also high purity and homogeneity. However, when using mechanical methods such as pulverization or grinding, if the particle diameter is below a certain level, for example, 10 μm (100,000 Å) or less, agglomeration of the particles occurs, so it is almost impossible to obtain fine powder smaller than that. The high purity cannot be maintained by mixing fine particles of the upper grinding media or the material of the attritor. Next, as a chemical method, there is a method of thermally decomposing a hafnium salt directly or a hydroxide precipitated from a solution thereof to form an oxide. The fine particles produced by this method have the disadvantage that they contain impurities such as salts of the starting materials and components contained in the precipitant. In particular, if the thermal decomposition temperature is set to a low temperature for the purpose of obtaining fine particles, there will be a large amount of residual impurities, and if heated to a high temperature to remove these impurities, grain growth will occur and become large particles. Therefore, it is almost impossible to obtain highly pure ultrafine powder by such a thermal decomposition method. Next, there is a physical method of volatilizing the metal itself, oxidizing it, and then condensing it, but in the case of Hf, it is extremely difficult because the boiling point is as high as 3200℃, and many particles aggregate when cooled, so it is difficult to cannot be manufactured. In the end, the size of the high-purity hafnia oxide fine particles obtained by the conventional technique outlined above is only 500 Å at the minimum.
Moreover, the range of variation was extremely wide, ranging from 50,000 to 500 Å, and it was completely impossible for the operator to freely adjust the range at will. Furthermore, the finer the particles, the more likely they are to contain impurities. However, in general, fine particles or ultrafine particles are better for obtaining dense ceramics, and sensors, other electronic materials, precision mechanical tools, etc. cannot be made with high performance unless materials with finer particles are used. On the other hand, if coarse particles are mixed in or the particle size distribution is uneven, the resulting ceramic product will have poor mechanical strength and poor light-transmitting and insulating properties, making it impossible to obtain a product of good quality. The same applies to ceramics made from hafnia, and the conventional level of fineness is still insufficient. The present invention compensates for the deficiencies of the prior art, and involves processing hafnium in the presence of water under a specific range of high temperature and pressure as detailed below to produce ultra-high purity hafnia that has never been obtained before. We have developed a method that can obtain fine powder, and we have also developed an interim method that allows us to control the degree of ultra-fine powder, the degree of fine powder, and its range as much as possible. As well as announcing this, further disclosure and provision is hereby made. From the results of many basic experiments, the present inventors were able to infer that hafnium turns into hafnia through the following three-step reaction under high-temperature, high-pressure water. That is, the first stage reaction Hf+2H 2 O→HfO 2 +2H 2 [Formation of HFO 2 film on the HF surface] Second stage reaction Hf+x/2H 2 →HfHx Third stage reaction HfHx+O 2 →HfO 2 +x/2H 2 be. In this reaction process, the generated H2
It was thought that the second stage of reaction with Hf metal promoted pulverization. As a result of repeated experiments, they were able to create a method to obtain highly pure hafnia (HfO 2 ) as an ultrafine powder. The conditions for this are as follows: First, from the three-step reaction mentioned above, it is necessary to have at least 2 moles of water (H 2 O) per mole of hafnium (Hf) in a weight ratio, and based on many experiments, the temperature conditions are as follows. It was found that the reaction did not occur at all below 300°C, so the temperature had to be above 300°C, and it was found that if the temperature exceeded 1300°C, it would be difficult to carry out and the particles would become large. Must be below ℃. Next, as for pressure conditions, there is almost no reaction under 0.1 MPa (about 1 atm), and 1000 MPa (about 10,000 atm).
If it exceeds 0.1 MPa or more, it becomes almost impossible to carry out the reaction, so the range in which the reaction is possible is 0.1 MPa or more and 1000 MPa.
It is necessary that the following is true. Furthermore, as for the time factor, the reaction is completed immediately if the temperature and pressure are high to a certain extent, so the time requirement is not particularly necessary. These conditions described above will be described in detail later in the Examples and further explained in detail with reference to the drawings. The specific means for producing ultrafine hafnia powder under these conditions is as follows, although it is on a trial scale. The means for producing ultrafine powder hafnia under these conditions is to heat metal hafnium (Hf) together with high-purity water in the proportions described above in a heat-resistant and pressure-resistant container. In this case, the container may be made of a material and in any shape (for example, a test tube type high-temperature, high-pressure container) that does not react with the high-temperature, high-pressure water or hafnium under the above conditions, but a large autoclave or the like may also be used. If contamination of the product is a problem due to erosion of the high-temperature, high-pressure container by water, it is possible to isolate the product from the container by using a capsule made of platinum or the like, and the capsule can be sealed by welding or other means. Then, the interior will only contain high-purity water and Hf metal, and there will be no room for any impurities to enter. Another feature of the present invention is that metal hafnium is chemically refined by reaction with water or hydrogen, so the hafnium used as a starting material is not subject to any restrictions on shape, size, particle size, etc. It is. When Hf strips and high-purity water (bi-distilled water) are sealed in a platinum capsule and reacted in a test tube type container, the reaction temperature and pressure are as described above, 300-300℃.
1300℃There are many combination methods in the range of pressure 0.1MPa to 1000MPa, but for example, if the pressure is
If it is 100MPa (approximately 1000Kg/cm 2 ), the temperature is 300℃
From the time the reaction starts, some unreacted substances exist until about 600℃, and when the temperature exceeds 600℃, most of it changes to HfO 2 and 700℃.
If the temperature exceeds ℃, everything becomes HfO 2 . Also increase the temperature to approx.
If the temperature is kept at around 500℃, the reaction will start if the pressure is 0.1MPa or higher, and at around 150MPa it will mostly change to HfO 2 , and if it exceeds 170MPa, it will all be HfO 2.As for the time, if the pressure and temperature are high, the reaction will start. It reacts almost immediately, but for example at a temperature of 500℃ and a pressure of 100MPa.
By the way, most of it becomes HfO 2 in 30 hours, and all of it becomes HfO 2 in 120 hours. When the reaction was complete, the temperature and pressure were gradually lowered, and HfO 2 was taken out and heated to 100°C.
Dry at around temperature. The product may appear to be agglomerated at first glance, but if you move it gently, you will get a smooth, ultra-fine powder as a whole. When observed under a microscope, the fineness of the powder obtained by the method of the present invention is far below the minimum particle size of 500 Å according to the prior art, and the minimum particle size is about 100 Å.
It ranges from an average of 200 Å to a maximum of 400 Å depending on temperature conditions. Furthermore, by selecting the temperature, pressure and time of the reaction, the average particle size and range of the product can be controlled with considerable freedom. For example, if the reaction temperature is lowered and the reaction pressure is increased, the average particle size of the HfO 2 produced will decrease, that is, the fineness will increase; Fineness can be reduced. As described above, according to the method of the present invention, ultrafine powder of high-purity hafnia (HfO 2 ) of 500 Å or less, which could not be obtained at all using conventional techniques, can be obtained in the range of up to 100 Å, and the average It can be said that we were also able to provide an epoch-making new method in which the particle size can be freely controlled by the producer. This has also made it possible to provide more advanced materials for use in electronic industry materials, precision processing, and machine tools. Example 1 In a reaction experiment between Hf and high-temperature, high-pressure water, Hf metal pieces with an average size of 1 x 0.2 x 0.02 mm and redistilled water were sealed in a platinum capsule at a molar ratio of H 2 O / Hf = 2:1. death,
Put it in a test tube type pressure vessel and check the temperature
This was done by heating in the range of 300 to 700°C. The pressure and time at that time are 25MPa to 150MPa and
It ranges from 3h to 120h. We also conducted an open system experiment under similar experimental conditions. The products were examined using a scanning electron microscope (SEM) and an X-ray powder diffractometer. In addition, the product was partially quantified using the X-ray powder pattern matching method. The products are unreacted Hf metal, Hf hydride and HfO2
Consists of. Changes in the quantity ratio of products obtained in closed system experiments with respect to temperature, pressure, and time are first
This is shown in FIGS. These results show that the HfO 2 generation reaction becomes active at temperatures above 600℃ and at a pressure of 75MPa.
The reaction rate decreases rapidly below 500
It has become clear that the reaction can proceed completely even at ℃ by long-term heating. Furthermore, experiments in an open system revealed that the reaction proceeded more slowly at 500°C and faster at 600°C than in a closed system. Figure 1 is an example of the range of conditions that can produce intermediate products HfHx and HfO 2 when the pressure is 100 MPa and the reaction temperature is varied, and Figure 2 is an example of the range of conditions that can produce the intermediate products HfHx and HfO 2 when the reaction temperature is 500°C and the reaction pressure is varied. Figure 3 is a diagram of the range of conditions under which a similar product can be produced when
FIG. 2 is a diagram showing the range of conditions for producing similar target products and intermediate products with respect to reaction time when the pressure is 100 MPa and the temperature is 500°C. Example 2 Using the same high-temperature and high-pressure container as in Example 1, and using the same materials, the target material was made finer by lowering the processing temperature and increasing the processing pressure, and vice versa. By this method, it is possible to obtain the target hafnia with reduced fineness. Examples are shown in Table 1. 【table】
第1図は処理圧力を100MPaとし処理温度を変
化させた場合の中間生成物並に目的物(HfO2)
の生成条件範囲図。第2図は処理温度を500℃と
し処理圧力を変化させた場合の中間生成物並に目
的物(HfO2)の生成条件範囲図。第3図は処理
圧力を100MPaとし処理温度を500℃とした場合
の反応時間に対する中間生成物並に目的物
(HfO2)の生成条件範囲図である。
Figure 1 shows the intermediate products and target product (HfO 2 ) when the processing pressure is 100 MPa and the processing temperature is changed.
Generation condition range diagram. Figure 2 is a diagram showing the range of production conditions for intermediate products and the target product (HfO 2 ) when the processing temperature is 500°C and the processing pressure is varied. FIG. 3 is a diagram showing the range of production conditions for intermediate products and the target product (HfO 2 ) with respect to reaction time when the processing pressure is 100 MPa and the processing temperature is 500°C.
Claims (1)
モル以上の水(H2O)を加え300℃以上1300℃以
下の温度範囲で0.1MPa(メガパスカル)以上
1000MPa以下の範囲の圧力で水熱合成をするこ
とを特徴とするハフニウム酸化物の超微粉末製造
方法。 2 該水熱合成の方法が前記特許請求の範囲第1
項に特定する範囲内において、反応温度を下げ及
び又は反応圧力を上げることにより微粉末度を上
げ、或は反応温度を上げ及び又は反応圧力を下げ
ることにより微粉末度を下げる方法である特許請
求の範囲第1項に記載のハフニウム酸化物の超微
粉末製造方法。[Claims] 1 2 to 1 mole of hafnium (Hf) by weight
0.1 MPa (megapascal) or more in a temperature range of 300°C to 1300°C by adding more than mol of water (H 2 O)
A method for producing ultrafine powder of hafnium oxide, characterized by carrying out hydrothermal synthesis at a pressure in the range of 1000 MPa or less. 2. The method of hydrothermal synthesis is defined in claim 1.
A patent claim that is a method of increasing the fineness by lowering the reaction temperature and/or increasing the reaction pressure, or decreasing the fineness by increasing the reaction temperature and/or lowering the reaction pressure, within the range specified in paragraph 1. A method for producing ultrafine hafnium oxide powder according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11168882A JPS593022A (en) | 1982-06-30 | 1982-06-30 | Manufacture of hyperfine powder of hafnium oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11168882A JPS593022A (en) | 1982-06-30 | 1982-06-30 | Manufacture of hyperfine powder of hafnium oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS593022A JPS593022A (en) | 1984-01-09 |
| JPH0212884B2 true JPH0212884B2 (en) | 1990-03-29 |
Family
ID=14567648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11168882A Granted JPS593022A (en) | 1982-06-30 | 1982-06-30 | Manufacture of hyperfine powder of hafnium oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593022A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100340404B1 (en) * | 1999-06-30 | 2002-06-12 | 이형도 | A Method for Preparing Oxide Powder by Pressured Hydrothermal Method |
| WO2013075209A1 (en) * | 2011-11-24 | 2013-05-30 | University Of Manitoba | Oxidation of metallic films |
-
1982
- 1982-06-30 JP JP11168882A patent/JPS593022A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS593022A (en) | 1984-01-09 |
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